Liquid dropping prevention mechanism, liquid dropping prevention method, and spin processing apparatus

Abstract

The invention provides a liquid dropping prevention mechanism, a liquid dropping prevention method and a spin processing device, which can maintain the flow rate of a chemical solution required for surface processing of a wafer and prevent the chemical solution from dropping from the front end of a dropping nozzle when and after the supply of the chemical solution is stopped. The dripping prevention mechanism comprises: a dripping nozzle which is made of a chemical-resistant resin and has a straight tube nozzle body which is made of a straight tube part and a dripping opening part which is connected with the lower part of the straight tube part; a chemical solution supply device which supplies the chemical solution to the dripping nozzle in a chemical solution processing supply amount during chemical solution processing, and supplies the chemical solution in a chemical solution end supply amount when the chemical solution processing of the wafer is finished; and a chemical solution supply stopping device that stops the supply of the chemical solution at a supply amount at the end of the chemical solution, the straight tube nozzle body is provided so as to be orthogonal to the wafer, and the supply amount at the time of the chemical solution processing is at least four times greater than the supply amount at the end of the chemical solution.

Description

Technical Field

[0001] The present invention relates to a dripping prevention mechanism and a dripping prevention method of a dripping nozzle of a spin processing device for dripping a chemical solution used in a semiconductor manufacturing process onto a wafer mounted on the spin processing device for chemical solution treatment, and a spin processing device using the dripping prevention mechanism. Background Art

[0002] In the semiconductor manufacturing process, various semiconductor wafer surface treatments are performed in accordance with each process. Such wafer surface treatments include, in addition to etching treatment for removing a damaged layer after back grinding, application of a developer to the wafer, development treatment in which a semiconductor circuit is sintered on a wafer coated with a developer on a wafer surface exposed to a circuit pattern, and cleaning of the wafer surface.

[0003] As a spin processing apparatus for performing such various wafer surface processing, the apparatus described in Patent Document 1 is known.

[0004] In such a spin processing apparatus, a dropping nozzle is provided for dropping a chemical solution onto a mounted wafer. In Patent Document 1, this dropping nozzle is referred to as an injection tube.

[0005] In a spin processing device such as that shown in Patent Document 1, while the temperature is adjusted by a chemical liquid circulation tank, the chemical liquid circulating in the piping is repeatedly circulated while maintaining a constant temperature until it reaches the vicinity of a chamber (a cover covering the surface processing area of ​​a chip in the spin processing device). The piping branches near the chamber, and the on / off of dripping of the chemical liquid is controlled by a pneumatic valve, and the chemical liquid is dripped onto the chip from a dripping nozzle.

[0006] However, it was found that if the supply of the chemical liquid is stopped by the air-operated valve, the chemical liquid drips from the tip of the dropping nozzle and splashes due to a water hammer phenomenon.

[0007] Even when the supply of the chemical solution was stopped using a process controller (flow controller), it was found that the chemical solution dripped from the tip of the dropping nozzle and splashed due to the water hammer phenomenon.

[0008] Even if the amount of the chemical liquid scattered from the tip of the dropping nozzle is one to a few drops, if these drops land on the wafer, the appearance of the wafer surface may change, causing problems in the process.

[0009] On the other hand, recently, semiconductors have been highly integrated and have become larger in diameter. Wafers larger than 12 inches have become the mainstream, and the diameter is getting larger and larger. In the case of wafers larger than 12 inches, for example, when the pipe diameter of the drip nozzle is 1 / 4 inch, the flow rate of the liquid needs to be 1.5L / min. For example, when the liquid is an etching solution, above etching rate.

[0010] Thus, it is necessary to maintain the flow rate of the chemical solution required for the surface treatment of the chip while allowing the chemical solution to drip from the front end of the dripping nozzle without splashing when and after the supply of the chemical solution is stopped, so as to prevent adverse conditions from occurring in the process treatment of the chip surface.

[0011] Prior art literature

[0012] Patent Literature

[0013] Patent Document 1: Japanese Patent Application Laid-Open No. 2001-267278

[0014] Patent Document 2: WO2017 / 204082

[0015] Patent Document 3: Japanese Patent Application Laid-Open No. 2017-188549 Summary of the invention

[0016] Problems to be solved by the invention

[0017] The present invention is completed in view of the problems of the above-mentioned prior art, and its purpose is to provide a dripping prevention mechanism, a dripping prevention method and a spin processing device that can prevent the chemical liquid from dripping from the front end of the dripping nozzle when and after the supply of the chemical liquid is stopped while maintaining the flow rate of the chemical liquid required for the surface treatment of the chip.

[0018] Solutions to Solve Problems

[0019] In order to solve the above-mentioned problems, the dripping prevention mechanism of the present invention is a dripping prevention mechanism of a dripping nozzle of a spin processing device for dripping a chemical solution used in a semiconductor manufacturing process onto a chip placed on the spin processing device for chemical solution treatment, wherein the dripping prevention mechanism includes: a dripping nozzle, which is made of a chemical-resistant resin and has a straight-cylindrical nozzle body composed of a straight-cylindrical portion and a dripping opening portion connected to the lower portion of the straight-cylindrical portion; a chemical solution supplying device, which supplies the chemical solution to the dripping nozzle at a supply amount during chemical solution treatment when the chip is being treated with chemical solution, and supplies the chemical solution at a supply amount at the end of chemical solution treatment when the chip is being treated with chemical solution; and a chemical solution supply stopping device, which stops the supply of the chemical solution supplied at the supply amount at the end of chemical solution treatment, the straight-cylindrical nozzle body being arranged in a manner orthogonal to the chip, and the supply amount during chemical solution treatment is more than 4 times greater than the supply amount at the end of chemical solution treatment.

[0020] Preferably, the straight tube portion has a length that is twice or more as long as a diameter of the drip opening.

[0021] Preferably, the straight nozzle body is a straight nozzle body in which the drip opening and the straight portion are connected coplanarly, and the inner diameter of the straight nozzle body is 1 / 4 inch or less.

[0022] Preferably, the wafer is a wafer with a diameter of 12 inches or more.

[0023] Preferably, there are a plurality of dropping nozzles, and different chemical liquids are dropped onto the wafer from the respective dropping nozzles to perform chemical liquid treatment.

[0024] Preferably, the chemical solution is an etching solution, and the amount of the chemical solution supplied during the treatment is such that the etching rate of the wafer becomes The above supply.

[0025] Preferably, there is a self-weight return suction mechanism for sucking the liquid medicine remaining in the straight tube portion after the supply of the liquid medicine is stopped, the self-weight return suction mechanism includes a liquid recovery nozzle body, the liquid recovery nozzle body has: a piping, which is made of a chemical-resistant resin and connected to a bent portion formed at the upper portion of the straight tube nozzle body; and a liquid recovery opening portion, which is connected to the piping, the liquid recovery nozzle body is formed by arranging the liquid recovery opening portion at a position lower than the dripping opening portion.

[0026] Preferably, there is further provided a liquid medicine regeneration mechanism, wherein the liquid medicine regeneration mechanism is formed by providing an on-off valve in the liquid recovery nozzle body, and the liquid medicine regeneration mechanism discharges the liquid medicine retained in the curved portion and the piping by opening the on-off valve.

[0027] The dripping prevention method of the present invention is a dripping prevention method for a dripping nozzle of a spin processing device using the dripping prevention mechanism, wherein the dripping prevention method includes: a process of supplying the chemical liquid to the dripping nozzle at the supply amount during chemical liquid treatment when the chip is being treated with chemical liquid; a process of supplying the chemical liquid at the supply amount at the end of chemical liquid treatment when the chip is finished with chemical liquid treatment; and a process of stopping the supply of the chemical liquid supplied at the supply amount at the end of chemical liquid treatment, wherein the supply amount during chemical liquid treatment is more than 4 times greater than the supply amount at the end of chemical liquid treatment.

[0028] Preferably, the chemical solution is an etching solution, and the amount of the chemical solution supplied during the treatment is such that the etching rate of the wafer becomes The above supply.

[0029] In addition, the dripping prevention method of the present invention is a dripping prevention method for a dripping nozzle of a spin processing device using the dripping prevention mechanism, wherein the dripping prevention method includes: a process of supplying the chemical liquid to the dripping nozzle at the supply amount during chemical liquid treatment when the chip is being treated with chemical liquid; a process of supplying the chemical liquid at the supply amount at the end of chemical liquid treatment when the chip is finished with chemical liquid treatment; a process of stopping the supply of the chemical liquid supplied at the supply amount at the end of chemical liquid treatment; and a process of sucking back the chemical liquid remaining in the straight tube portion after the supply of the chemical liquid is stopped after the stopping process, the supply amount during chemical liquid treatment being more than 4 times greater than the supply amount at the end of chemical liquid treatment.

[0030] The spin processing device of the present invention is a spin processing device incorporating the above-mentioned liquid dripping prevention mechanism, and the spin processing device performs liquid chemical processing by dripping liquid chemical onto a mounted wafer.

[0031] Preferably, the wafer is a wafer with a diameter of 12 inches or more.

[0032] Effects of the Invention

[0033] According to the present invention, the following remarkable effects are achieved: a dripping prevention mechanism and a dripping prevention method as well as a spin processing device are provided which can provide a flow rate of a chemical solution required for maintaining the surface treatment of a chip while preventing the chemical solution from dripping from the front end of the dripping nozzle when and after the supply of the chemical solution is stopped. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the main parts showing one embodiment of a spin processing device including the dripping prevention mechanism of the present invention.

[0035] Figure 2 This is a schematic diagram of the main parts showing an embodiment of a spin processing device including a self-gravity suction mechanism.

[0036] Figure 3 This is a schematic diagram showing the chemical solution remaining in the straight tube portion of the dripping nozzle.

[0037] Figure 4 It is a three-dimensional diagram showing one embodiment of a mesh member.

[0038] Description of reference numerals:

[0039] 10: Spin processing device; 12: Liquid dripping prevention mechanism; 14: Wafer rotation holding device; 16: Liquid recovery mechanism; 18a, 18b, 18c: Annular liquid recovery tank; 20: Liquid (processing liquid); 22: Cleaning liquid; 24: Dropping nozzle; 26: Straight tube; 28: Dropping opening; 30: Straight tube nozzle body; 32: Cleaning liquid drop nozzle; 33: Swing arm; 34: Liquid supply device; 35: Swing arm for cleaning liquid ; 36: Liquid supply stop device; 37: Chamber; 38: Circulation tank; 40: Grid component; 42: Annular portion; 44: Grid body; 46: Self-weight suction mechanism; 48: Bending portion; 50: Piping; 52: Liquid recovery opening; 54: Liquid recovery nozzle body; 56: Liquid recovery tank; 58: Opening and closing valve; 60: Valve; 62: Flow controller; 64: Heater; 66: Pump; 70, 72: Circulation pipe; D1, L1: Distance. DETAILED DESCRIPTION

[0040] Hereinafter, embodiments of the present invention will be described, but these embodiments are shown by way of example, and various modifications are possible without departing from the technical concept of the present invention. In the drawings, the same components are denoted by the same reference numerals.

[0041] exist Figure 1 In the figure, reference numeral 10 is a spin treatment device having a drip prevention mechanism 12 of the present invention. The spin treatment device 10 is a spin treatment device that treats the surface of a wafer using a treatment liquid or a cleaning liquid, similar to the spin treatment device described in Patent Document 1. It should be noted that when holding the wafer, the holding using a plurality of peripheral movable pins described in Patent Document 2 may also be performed.

[0042] The spin treatment device 10 includes: a wafer rotation holding device 14 that rotates and holds a wafer to be surface treated; and a chemical solution recovery mechanism 16 made of polyvinyl chloride (PVC) that is disposed around the wafer rotation holding device 14 in a manner that allows vertical movement. The chemical solution recovery mechanism 16 is composed of a plurality of annular chemical solution recovery tanks 18a, 18b, and 18c that are disposed to be vertically movable relative to each other. The plurality of annular chemical solution recovery tanks 18a, 18b, and 18c are used respectively according to the types of chemical solution (processing solution) 20 and cleaning solution 22 to separate and recover each chemical solution 20.

[0043] The dripping prevention mechanism 12 is a dripping prevention mechanism for a drop nozzle 24 of the spin processing device 10 for dropping a chemical solution 20 used in a semiconductor manufacturing process onto a wafer mounted on the spin processing device 10 for chemical solution processing. The chemical solution 20 can be prevented from dripping from the tip of the drop nozzle 24 when and after the supply of the chemical solution 20 is stopped.

[0044] like Figure 2 and Figure 3 As shown, the dripping nozzle 24 is a dripping nozzle 24 having a straight nozzle body 30, which is made of a chemical-resistant resin and is composed of a straight portion 26 and a dripping opening 28 connected to the lower portion of the straight portion 26. The chemical solution 20 is a mixed acid or hydrofluoric acid, or chemical solutions 20 of different concentrations thereof, and the cleaning solution 22 is a rinse solution such as pure water. Figure 1 In the example of FIG. 1 , a total of 7 dropping nozzles 24 are provided for the chemical solution 20, and a single cleaning liquid dropping nozzle 32 is provided for the cleaning liquid 22. The dropping nozzle 24 may be only one, but when there are a plurality of dropping nozzles, different chemical solutions can be dropped separately without changing the dropping nozzles, which is preferred.

[0045] As the chemical-resistant resin constituting the dropping nozzle 24, fluororesins such as PFA (perfluoroalkoxyalkane) and PTFE (polytetrafluoroethylene) are preferable.

[0046] Reference numeral 33 denotes a swing arm for swinging the drop nozzle 24. As the swing arm 33, a structure for swinging the drop nozzle (in Patent Document 3, the etching liquid supply nozzle) as described in Patent Document 3 can be adopted. Reference numeral 35 denotes a cleaning liquid swing arm for moving or swinging the cleaning liquid drop nozzle 32 on the wafer as needed during the cleaning process.

[0047] The dripping prevention mechanism 12 includes: a liquid medicine supply device 34, which supplies the liquid medicine 20 to the dripping nozzle 24 at a supply amount during liquid medicine treatment when the wafer is being treated with liquid medicine, and supplies the liquid medicine 20 at a supply amount at the end of liquid medicine treatment when the wafer is being treated with liquid medicine; and a liquid medicine supply stop device 36, which stops the supply of the liquid medicine 20 supplied at the supply amount at the end of liquid medicine treatment. An example of a flow controller is shown as the liquid medicine supply device 34, and an example of a pneumatic valve is shown as the liquid medicine supply stop device 36. That is, the dripping prevention mechanism 12 is configured to include a liquid medicine supply device 34 that adjusts the flow rate of the liquid medicine 20 and a liquid medicine supply stop device 36 that can instantly stop the supply of the liquid medicine 20.

[0048] Reference numeral 38 denotes a circulation tank for the chemical solution 20. The chemical solution 20 returned to the circulation tank is reused. Reference numeral 37 denotes a cover covering a surface processing region of a wafer in the spin processing apparatus 10, that is, a chamber.

[0049] In the dripping prevention mechanism 12, the dripping nozzle 24 is arranged so that the straight nozzle body 30 is perpendicular to the wafer. Also, the supply amount of the chemical solution during the treatment is four times or more greater than the supply amount of the chemical solution at the end of the treatment.

[0050] In the example shown in the figure, the straight tube portion 26 is configured to have a length that is twice or more the diameter of the drip opening 28 .

[0051] The straight nozzle body 30 is a straight nozzle body in which the drip opening 28 and the straight portion 26 are connected to each other in the same plane.

[0052] In addition, the wafer placed on the spin treatment device 10 and subjected to the chemical treatment is preferably a wafer having a diameter of 12 inches or more. In the case of a wafer having a diameter of 12 inches or more, the supply amount of the chemical treatment is preferably 1.5 L / min, and the supply amount of the chemical at the end is preferably 0.3 L / min or less. More preferably, in the case of a wafer having a diameter of 12 inches or more, the supply amount of the chemical at the end is preferably 1.5 L / min, and the supply amount of the chemical at the end is preferably 0.2 L / min or less.

[0053] The chemical solution 20 is, for example, an etching solution. In the case of the etching solution, from the viewpoint of production efficiency, the supply amount of the chemical solution during the treatment is preferably such that the etching rate of the wafer is The above supply.

[0054] Figure 3 The figure shows the situation where the chemical liquid 20 remains in the straight tube portion 26 of the dropping nozzle 24 having an inner diameter of 1 / 4 inch in the straight tube nozzle body 30. When the chemical liquid 20 is continuously supplied through the pipe and dripped from the dropping nozzle 24 onto the wafer, if the supply of the chemical liquid 20 is stopped, the chemical liquid 20 remains in the straight tube portion 26. In other words, the chemical liquid such as the mixed acid sags about 1 mm due to the surface tension at the dropping opening 28 as the nozzle tip, and the chemical liquid remains in the straight tube portion 26.

[0055] At this time, if the supply of the liquid medicine 20 is immediately and completely stopped using a pneumatic valve or a flow controller, for example, based on the supply amount of 1.5 L / min during liquid medicine treatment, the liquid medicine 20 drips from the front end of the drip nozzle 24 and splashes due to the water hammer phenomenon (water hammer effect caused by a sudden change in pressure inside the piping).

[0056] In the present invention, since the water hammer phenomenon can be prevented from occurring, the chemical solution 20 does not drip from the tip of the dropping nozzle 24 and splash.

[0057] The inner diameter of the straight nozzle body 30 is preferably less than 1 / 4 inch. In the example shown in the figure, the straight nozzle body 30 is a straight nozzle body in which the drip opening 28 and the straight tube part 26 are connected coplanarly, and the inner diameter of the straight nozzle body 30 is 1 / 4 inch. The inner wall of the straight nozzle body 30 is preferably a smooth surface without unevenness.

[0058] In the case of using a drip nozzle having an inner diameter of the straight nozzle body 30 exceeding 1 / 4 inch, as Figure 4 As shown, it is preferred that a mesh member 40 made of a chemical-resistant resin such as PFA or PTFE is installed at the drip opening 28 of the drip nozzle 24. The mesh member 40 is composed of an annular portion 42 fitted and installed at the drip opening 28 of the drip nozzle 24 and a mesh body 44 installed at the annular portion 42. By installing the mesh member 40 at the drip opening 28 of the drip nozzle 24, when the supply of the chemical solution 20 is stopped, the chemical solution such as the mixed acid sags by about 1 mm due to the surface tension of the mesh member 40 at the drip opening 28 as the nozzle tip, and the chemical solution remains in the straight tube portion 26.

[0059] like Figure 3 As shown, if the supply of the continuously supplied drug solution 20 is stopped, the drug solution 20 remains in the straight tube portion 26 , and therefore, it is further preferable to provide a suction mechanism for sucking the remaining drug solution 20 .

[0060] like Figure 2 As shown, the dripping prevention mechanism 12 includes a self-weighted suction mechanism 46. The self-weighted suction mechanism 46 is a self-weighted suction mechanism for sucking the chemical solution 20 remaining in the straight tube portion 26 after the supply of the chemical solution 20 is stopped.

[0061] The self-weight back-suction mechanism 46 is constructed to have a liquid recovery nozzle body 54, and the liquid recovery nozzle body 54 has: a piping 50, which is made of a chemical-resistant resin and is connected to the curved portion 48 of the dripping nozzle 24 formed on the upper portion of the straight nozzle body 30; and a liquid recovery opening 52, which is connected to the piping 50, and the liquid recovery nozzle body 54 is formed by the liquid recovery opening 52 being arranged at a position lower than the dripping opening 28. The liquid recovery opening 52 is provided in a liquid recovery tank 56, and the liquid recovery tank 56 is used to recover the drug solution 20. Alternatively, as long as the liquid recovery opening 52 is provided, it can also be constructed to discharge the liquid directly through the liquid recovery opening 52. It should be noted that in Figure 2 In the example of FIG. 5 , the circulation tank 38 is further connected to the liquid recovery tank 56 . Thus, the sucked-back chemical liquid is returned to the circulation tank 38 .

[0062] As the chemical-resistant resin constituting the bent portion 48 of the dropping nozzle 24 and the pipe 50, a fluororesin such as PFA (perfluoroalkoxyalkane) or PTFE (polytetrafluoroethylene) is preferable.

[0063] like Figure 2As shown, the self-weight back-sucking mechanism 46 is arranged at a position where the liquid recovery opening 52 is lower than the drip opening 28 by a distance D1. Therefore, when the chemical liquid 20 is continuously supplied through the pipe 50 and then through the curved portion 48 of the drip nozzle 24 and the chemical liquid 20 is dripped onto the wafer from the drip nozzle 24, if the supply of the chemical liquid 20 is stopped, the chemical liquid 20 remains in the straight tube portion 26, the curved portion 48 and the pipe 50. However, since the liquid recovery opening 52 is arranged at a position lower than the drip opening 28 by a distance D1, a pump or the like is not required, and a back-sucking phenomenon occurs in which the chemical liquid 20 remaining in the straight tube portion 26 due to its own weight is sucked and the chemical liquid 20 is recovered from the liquid recovery opening 52 by using potential energy and gravity. This back-sucking phenomenon is a phenomenon based on the siphon principle.

[0064] That is, if the supply of the medicinal liquid 20 is stopped, the straight tube portion 26, the curved portion 48, and the piping 50 are filled with the medicinal liquid 20, but due to the relationship between the drip opening portion 28 located at a higher position and the liquid recovery opening portion 52 arranged at a position lower than the drip opening portion 28 by a distance D1, the medicinal liquid 20 remaining in the straight tube portion 26 is sucked by its own weight and the medicinal liquid 20 is recovered from the liquid recovery opening portion 52 without being sucked by a pump.

[0065] In addition, Figure 2 , reference numeral 58 is an on-off valve provided on the liquid recovery nozzle body 54. Reference numeral 38 is a circulation tank, which is temperature-adjusted to 25 to 65° C. by a heater 64 and circulates through a circulation pipe 70. A pump 66 is connected to the circulation tank 38. In addition, reference numeral 60 is a valve, and reference numeral 62 is a flow controller. Reference numeral 72 is also a circulation pipe connected to the circulation tank 38.

[0066] The on-off valve 58 provided in the liquid recovery nozzle body 54 functions as a liquid medicine regeneration mechanism, and the liquid medicine retained in the curved portion 48 and the pipe 50 is discharged by opening the on-off valve 58. Although the liquid droplets are sucked back to the drip opening 28 as the nozzle tip by their own weight, the degree of the sucking back can be controlled by the on-off valve 58 and the flow controller 62.

[0067] By opening valve 60 branching from circulation tank 38 , the chemical solution passes through flow controller 62 and branches through on-off valve 58 that is sucked back by gravity to reach the tip of the discharge nozzle.

[0068] The piping from the valve 60 to the branch of the self-weighted back-suction on-off valve 58 is as short as possible. On the other hand, if the liquid medicine from the valve 60 to the dripping opening 28 at the nozzle tip stops for a long time, the performance of the liquid medicine may deteriorate. Figure 2If the distance L1 is exceeded, there is a possibility that the temperature changes and the original performance of the chemical solution cannot be maintained.

[0069] Such degraded liquid medicine needs to be discharged from the drip opening 28, which is the front end of the nozzle, and discarded. This is called the discharge of degraded liquid medicine. As a means to eliminate the discharge of the degraded liquid medicine, by opening the on-off valve 58 for a long time, the liquid medicine reaching the valve 60 can be discharged. In particular, after the self-weight suction mechanism 46 is used for suction, the on-off valve 58 is opened to discharge the liquid medicine retained in the curved portion 48 and the piping 50 at the distance L1 and empty them. In this way, the on-off valve 58 provided in the liquid recovery nozzle body 54 acts as a liquid medicine regeneration mechanism. As a result, there is no need to discharge the degraded liquid medicine with degraded performance from the front end of the nozzle, i.e., the drip opening 28, and discard the degraded liquid medicine discharge.

[0070] The dripping prevention method of the present invention is a dripping prevention method for the dripping nozzle 24 of the spin processing device 10 using the above-mentioned dripping prevention mechanism 12, including: when the chip is being treated with liquid medicine, the process of supplying the liquid medicine to the dripping nozzle at the supply amount during the liquid medicine treatment; when the liquid medicine treatment of the chip is finished, the process of supplying the liquid medicine at the supply amount at the end of the liquid medicine treatment; and the process of stopping the supply of the liquid medicine at the supply amount at the end of the liquid medicine treatment, the supply amount during the liquid medicine treatment being more than 4 times greater than the supply amount at the end of the liquid medicine treatment.

[0071] Preferably, when the chemical solution 20 is an etching solution, the amount of the chemical solution supplied during the treatment is such that the etching rate of the wafer becomes The above supply.

[0072] In addition, preferably, the dripping prevention method of the present invention is a dripping prevention method for the dripping nozzle 24 of the spin processing device 10 using the dripping prevention mechanism 12, comprising: a process of supplying the chemical liquid to the dripping nozzle at the supply amount during chemical liquid treatment when the wafer is being treated with chemical liquid; a process of supplying the chemical liquid at the supply amount at the end of chemical liquid treatment when the wafer is being treated with chemical liquid; a process of stopping the supply of the chemical liquid supplied at the supply amount at the end of chemical liquid treatment; and a process of sucking back the chemical liquid remaining in the straight tube after the supply of the chemical liquid is stopped after the stopping process, wherein the supply amount during chemical liquid treatment is more than 4 times greater than the supply amount at the end of chemical liquid treatment. The sucking back process of sucking the chemical liquid 20 can be implemented by the self-weight sucking back mechanism 46.

[0073] The spin processing apparatus of the present invention is a spin processing apparatus 10 incorporating the dripping prevention mechanism 12, and is a spin processing apparatus that drips a chemical solution 20 onto a mounted wafer to perform chemical treatment. The wafer is preferably a wafer having a diameter of 12 inches or more.

[0074] [Example]

[0075] The present invention will be further specifically described below with reference to Examples. However, these Examples are provided for illustrative purposes only and should not be construed in a limiting sense.

[0076] <Test Summary>

[0077] Using a dripping nozzle with an inner diameter of 1 / 4 inch, conditional oscillation was performed with the goal of eliminating dripping to confirm the presence or absence of dripping.

[0078] Chemical solution used: Only one of the two mixed acid lines was used, and the test was performed with mixed acid. About 14L of mixed acid was used.

[0079] Spin treatment device used: A spin treatment device in which the above-mentioned dripping prevention mechanism 12 and the self-weight suction mechanism 46 were installed in MSE-5000ME manufactured by Samick Semiconductor Industries was used.

[0080] Wafer: 12-inch round silicon wafer

[0081] Conditional swing items:

[0082] ·Suck back valve opening

[0083] ·Suction back time

[0084] · Relationship between the mass flow meter (flow controller) and valve (pneumatic valve) when the discharge of the chemical solution is stopped

[0085] · Flow rate: Change the flow rate to check for dripping. The flow rate during the treatment of the chemical solution was also evaluated for sufficiency or insufficiency.

[0086] ·Wafer rotation speed based on wafer rotation holding device: 800 rpm

[0087] In Examples 1 to 2 (Evaluation Nos. 38-1 and 38-2), the flow rate was 1.5 L / min for 5 seconds and then 0.3 L / min for 1 second. In Examples 3 to 5 (Evaluation Nos. 41, 41-2 and 41-3), the flow rate was 1.5 L / min for 2 seconds and then 0.3 L / min for 1 second.

[0088] Evaluation results: as shown in Table 1. Table 1 shows data of experimental results showing the presence or absence of dripping caused by the difference between the supply amount during the chemical solution treatment and the supply amount at the end of the chemical solution treatment.

[0089] [Table 1]

[0090]

[0091] As shown in Table 1, when the supply rate of the chemical solution during treatment was changed from 1.5 L / min to 0.3 L / min at the end of the chemical solution treatment, the supply of the chemical solution was stopped and the sucking back process was performed, no dripping occurred.

Claims

1. A liquid dripping prevention mechanism, which is a liquid dripping prevention mechanism of a drop nozzle of a spin treatment device for dripping a chemical solution used in a semiconductor manufacturing process onto a wafer placed on the spin treatment device for chemical solution treatment, wherein: The dripping prevention mechanism comprises: A dripping nozzle, which is made of a chemical-resistant resin and has a straight nozzle body consisting of a straight portion and a dripping opening connected to the lower portion of the straight portion; a chemical liquid supply device for supplying the chemical liquid to the dropping nozzle at a supply amount during chemical liquid treatment during chemical liquid treatment of the wafer, and supplying the chemical liquid at a supply amount at a chemical liquid end time when chemical liquid treatment of the wafer is finished; and a liquid medicine supply stopping device for stopping the supply of the liquid medicine supplied at the liquid medicine end supply amount; The straight nozzle body is arranged in a manner orthogonal to the wafer, The amount of the chemical solution supplied during the treatment is at least four times greater than the amount of the chemical solution supplied at the end of the treatment.

2. The dripping prevention mechanism according to claim 1, wherein: The straight tube portion has a length that is twice or more the diameter of the drip opening.

3. The dripping prevention mechanism according to claim 1, wherein: The straight nozzle body is a straight nozzle body in which the drip opening and the straight portion are connected coplanarly, and the inner diameter of the straight nozzle body is 1 / 4 inch or less.

4. The dripping prevention mechanism according to claim 1, wherein: The wafer is a wafer with a diameter of 12 inches or more.

5. The dripping prevention mechanism according to claim 1, wherein: There are a plurality of dropping nozzles, and different chemical liquids are dropped onto the wafer from the respective dropping nozzles to perform chemical liquid treatment.

6. The dripping prevention mechanism according to claim 1, wherein: The chemical solution is an etching solution, and the amount of the chemical solution supplied during the treatment is such that the etching rate of the wafer becomes The above supply.

7. The dripping prevention mechanism according to claim 1, wherein: The dripping prevention mechanism includes a self-weight suction mechanism for sucking the liquid medicine remaining in the straight tube portion after the liquid medicine supply is stopped. The self-weighted suction mechanism comprises a liquid recovery nozzle body, The liquid recovery nozzle body has: a pipe made of a chemical-resistant resin and connected to a curved portion formed at an upper portion of the straight nozzle body; and a liquid recovery opening connected to the pipe, The liquid recovery nozzle body is formed by arranging the liquid recovery opening at a position lower than the dripping opening.

8. The dripping prevention mechanism according to claim 7, wherein: The liquid dripping prevention mechanism further includes a liquid medicine regeneration mechanism, wherein the liquid medicine regeneration mechanism is formed by providing an opening and closing valve on the liquid recovery nozzle body. The chemical liquid regeneration mechanism discharges the chemical liquid accumulated in the curved portion and the pipe by opening the on-off valve.

9. A method for preventing dripping of a dripping nozzle of a spin treatment device using the dripping prevention mechanism according to any one of claims 1 to 8, wherein: The dripping prevention method comprises: During the chemical liquid treatment of the wafer, supplying the chemical liquid to the dropping nozzle at a supply amount during the chemical liquid treatment; A step of supplying the chemical solution at a supply volume at the end of chemical solution treatment of the wafer; and a step of stopping the supply of the chemical solution supplied at the end supply amount of the chemical solution, The amount of the chemical solution supplied during the treatment is at least four times greater than the amount of the chemical solution supplied at the end of the treatment.

10. The dripping prevention method according to claim 9, wherein: The chemical solution is an etching solution, and the amount of the chemical solution supplied during the treatment is such that the etching rate of the wafer becomes The above supply.

11. A method for preventing dripping of a dripping nozzle of a spin treatment device using the dripping prevention mechanism according to claim 7 or 8, wherein: The dripping prevention method comprises: During the chemical liquid treatment of the wafer, supplying the chemical liquid to the dropping nozzle at a supply amount during the chemical liquid treatment; A step of supplying the chemical solution at a supply volume at the end of chemical solution treatment of the wafer; The step of stopping the supply of the chemical solution supplied at the end supply amount of the chemical solution; and After the stopping step, a sucking back step of sucking the liquid medicine remaining in the straight tube portion after the supply of the liquid medicine is stopped, The amount of the chemical solution supplied during the treatment is at least four times greater than the amount of the chemical solution supplied at the end of the treatment.

12. A spin treatment device, comprising: a spin treatment device incorporating the dripping prevention mechanism according to any one of claims 1 to 8; The spin processing apparatus performs liquid chemical processing by dropping liquid chemical on a mounted wafer.

13. The spin processing device according to claim 12, wherein: The wafer has a diameter of 12 inches or more.

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