A high-density interconnection transfer substrate structure and preparation method

Abstract

The present invention discloses a high-density interconnect transfer substrate structure and a preparation method, which includes a substrate body, a plurality of conductive through holes are opened on the substrate body, and the conductive through holes penetrate the substrate body; on the first surface of the substrate body, a conductive groove is opened outside the hole edge of the conductive through hole, and a solder pad is arranged in the conductive groove; a chip mounting position for mounting the chip body is also formed on the first surface; between two adjacent conductive through holes, the chip mounting position extends from the position where the solder pad corresponding to one conductive through hole is located to the position where the solder pad corresponding to the other conductive through hole is located; the chip mounting position is located between the two conductive through holes and does not overlap with the conductive through holes. A conductive groove is arranged outside the hole edge of the conductive through hole, and a solder pad is arranged in the conductive groove, which improves the compactness of the connection layout and also enhances the mechanical strength, meeting the dual requirements of high-density wiring requirements and high mechanical strength.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and in particular to a high-density interconnection transfer substrate structure and a preparation method thereof. Background Art

[0002] In the field of semiconductor processing, substrates are important carrier platforms for electronic components. They are used to achieve electrical connections between chips and external circuits, and provide mechanical support and heat dissipation channels for chips. Their performance has an important impact on the reliability of the overall circuit, signal transmission quality, and structural stability. Therefore, the design of substrates has always been a research focus in the field of semiconductor processing.

[0003] Conventional high-density substrates usually use a perforated solution to achieve electrical connection between the chip and the external circuit; the perforated solution mainly forms conductive vias by drilling holes in the substrate, and then uses pads to connect the chip and the wire; this solution has a high degree of processing maturity and a certain interconnection capability, and is suitable for traditional low- and medium-density interconnection needs. However, in high-density design, the limitations of the perforated solution gradually emerge; first, high-density wiring requires an increase in the number of conductive vias and a reduction in their spacing, and a dense via layout will weaken the mechanical strength of the substrate, causing the substrate to be more prone to deformation, cracks, or even breakage during processing and use.

[0004] It can be seen that the hole opening scheme in the prior art is difficult to meet the requirements of high-density substrates for high-density wiring and high mechanical strength. Summary of the invention

[0005] The object of the present invention is to provide a high-density interconnect transfer substrate structure and a preparation method to solve the problem that the substrate in the prior art is difficult to simultaneously meet the requirements of high-density wiring and high mechanical strength.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] A high-density interconnect transfer substrate structure comprises a substrate body, a plurality of conductive through holes are formed on the substrate body, and the conductive through holes penetrate the substrate body;

[0008] On the first surface of the substrate body, a conductive groove is opened outside the edge of the conductive through hole, and a pad is arranged in the conductive groove;

[0009] A chip mounting position for mounting the chip body is also formed on the first surface; between two adjacent conductive through holes, the chip mounting position extends from the position of the pad corresponding to one conductive through hole to the position of the pad corresponding to the other conductive through hole; the chip mounting position is located between the two conductive through holes and does not overlap with the conductive through holes.

[0010] Optionally, an insulating ring is inserted into the conductive through hole of the substrate body, and the insulating ring extends from the second surface of the substrate body to the first surface and separates the conductive through hole and the conductive slot.

[0011] Optionally, a plurality of straight grooves are provided at intervals along the annular direction on the inner side of the insulating ring, and the straight grooves extend from the second surface to the first surface; and conductive blocks are arranged and filled in the straight grooves.

[0012] Optionally, a positioning ring is further installed on the first surface, and the positioning ring includes a first metal inner ring, a plastic middle ring and a second metal outer ring which are sequentially sleeved from the inside to the outside;

[0013] The plastic middle ring is arranged corresponding to the position of the insulating ring, the second metal outer ring is arranged corresponding to the position of the pad, and the first metal inner ring is arranged corresponding to the position of the conductive block;

[0014] Wherein, after the plastic middle ring is bonded to the insulating ring, the first metal inner ring is separated from the substrate body.

[0015] A method for preparing a high-density interconnect transfer substrate structure, used for preparing the high-density interconnect transfer substrate structure as described above, comprising:

[0016] Step S100, providing a substrate body, dividing chip mounting positions on the substrate body, and opening conductive grooves on the first surface of the substrate body corresponding to the positions of the chip mounting positions;

[0017] Step S200, opening a conductive through hole on the bottom wall of the conductive slot;

[0018] Step S300, setting a pad in the conductive slot;

[0019] Step S400, installing a chip body on a chip mounting position, and electrically connecting the pins of the chip body to corresponding pads;

[0020] Among them, between two adjacent conductive through holes, the chip mounting position extends from the position of the pad corresponding to one conductive through hole to the position of the pad corresponding to another conductive through hole; the chip mounting position is located between the two conductive through holes and does not overlap with the conductive through holes.

[0021] Optionally, the step S100 specifically includes:

[0022] Step S110: Delineate a plurality of chip mounting positions on the first surface of the substrate body according to the size and position of the chip mounting positions, wherein at least two chip mounting positions are arranged side by side; divide the middle processing area of ​​the conductive groove corresponding to the area between the two chip mounting positions, and divide the edge processing area of ​​the conductive groove corresponding to the area where one chip mounting position is far away from the other chip mounting position and the area where the other chip mounting position is far away from the first chip mounting position; the widths of the middle processing area and the edge processing area are matched with the pin widths of the chip body respectively;

[0023] Step S120 , opening conductive grooves on the first surface corresponding to the middle processing area and the edge processing area respectively.

[0024] Optionally, the step S200 specifically includes:

[0025] Step S210, using the center point of the conductive groove as a reference, drilling a conductive through hole from the first surface to the second surface of the substrate body by a laser drilling device;

[0026] Step S220, cleaning the inner wall of the conductive through hole by plasma cleaning;

[0027] Step S230 , depositing a conductive layer on the inner wall of the conductive through hole, wherein the conductive layer extends from the second surface to the bottom wall of the conductive groove.

[0028] Optionally, after step S230, the method further includes:

[0029] Step S240, inserting a preformed insulating ring from the second surface into the conductive through hole until the insulating ring is flush with the second surface; the insulating ring extends from the second surface of the substrate body to the first surface;

[0030] Step S250, forming a straight groove on the inner wall of the insulating ring by using a laser drilling device, wherein the straight groove extends from the second surface to the first surface;

[0031] After step S300, the method further includes:

[0032] Step S310, flowing adhesive from the first surface into the straight groove, and the adhesive covers the groove wall of the straight groove and the end surface of the insulating ring;

[0033] Step S320, inserting the conductive block into the straight groove, and setting a positioning ring on the first surface, the positioning ring comprising a first metal inner ring, a plastic middle ring and a second metal outer ring which are sequentially sleeved from the inside to the outside; the plastic middle ring is set correspondingly to the position of the insulating ring, the second metal outer ring is set correspondingly to the position of the pad, and the first metal inner ring is set correspondingly to the position of the conductive block;

[0034] Step S330, heating the conductive through hole to solidify the adhesive between the conductive block and the straight slot, and solidify the adhesive between the plastic middle ring and the insulating ring;

[0035] The part where the conducting block is connected to the straight slot is made of plastic.

[0036] Optionally, the process of setting the positioning ring includes:

[0037] Step S331, selecting two conductive blocks, and connecting test probes to the conductive blocks from the second surface respectively;

[0038] Step S332, installing a positioning ring on the first surface of the substrate body, and monitoring in real time whether one conductive block is conductive with another conductive block through the first metal inner ring;

[0039] Step S333: When one conductive block is connected to another conductive block through the first metal inner ring, the setting of the positioning ring is completed.

[0040] Optionally, the conductive block is a titanium block, the first metal inner ring is an aluminum ring; the plastic middle ring and the insulating ring are made of polyethylene;

[0041] After step S400, the method further includes:

[0042] Step S410, flushing the first metal inner ring with a dilute hydrochloric acid solution to dissolve the first metal inner ring to form a stepped groove;

[0043] Step S420, drying the substrate body.

[0044] Compared with the prior art, the present invention has the following beneficial effects:

[0045] The high-density interconnect transfer substrate structure and preparation method provided by the present invention provide a conductive groove outside the hole edge of the conductive through hole, and place a pad in the conductive groove, which improves the compactness of the connection layout and also enhances the mechanical strength; in addition, the pad is located in the conductive groove, which is equivalent to the pad being arranged around the hole edge of the through hole, which enhances the mechanical strength around the conductive through hole and reduces the risk of damage during subsequent processing. Then, after determining the position of the conductive through hole and the pad, the chip mounting position is set between adjacent conductive through holes without overlapping with the conductive through holes, so that the spacing between the chip body and the conductive through hole is further reduced, so that the substrate body meets the requirements of high-density wiring. In summary, the present invention meets the dual requirements of high-density wiring requirements and high mechanical strength. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0047] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantive technical significance. Any structural modification, change in proportion or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical contents disclosed by the present invention.

[0048] Figure 1 A first structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0049] Figure 2 A second structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0050] Figure 3 A third structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0051] Figure 4 A fourth structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0052] Figure 5 A fifth structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0053] Figure 6 A sixth structural schematic diagram of a high-density interconnect transfer substrate structure provided by an embodiment of the present invention;

[0054] Illustrations: 100, substrate body; 101, first surface; 102, second surface; 110, conductive through hole; 120, conductive groove; 200, pad; 300, chip mounting position; 400, chip body; 500, insulating ring; 501, straight groove; 600, conductive block; 700, positioning ring; 710, first metal inner ring; 720, plastic middle ring; 730, second metal outer ring. DETAILED DESCRIPTION

[0055] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0056] In the description of the present invention, it should be understood that the terms "upper", "lower", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a centrally arranged component at the same time.

[0057] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0058] Embodiment 1:

[0059] The high-density interconnect transfer substrate structure provided in the embodiment of the present invention is suitable for scenarios requiring high-density wiring. In this embodiment, the specific structure of the high-density interconnect transfer substrate structure is optimized to have advantages such as high mechanical strength and high stability.

[0060] like Figure 5 to Figure 6 As shown, the high-density interconnect transfer substrate structure in this embodiment includes a substrate body 100, and a plurality of conductive through holes 110 are opened on the substrate body 100, and the conductive through holes 110 penetrate the substrate body 100;

[0061] On the first surface 101 of the substrate body 100, a conductive slot 120 is provided outside the hole edge of the conductive through hole 110, and a pad 200 is provided in the conductive slot 120. Among them, the conductive through hole 110 is a key path to achieve electrical connection. By opening a plurality of conductive through holes 110 on the substrate body 100 and combining the design of the conductive slot 120 and the pad 200, a high-density interconnection capability can be achieved in a limited space, which not only reduces the space occupied by the conductive through hole 110 and the pad 200, but also maximizes the space utilization efficiency of the substrate. It can meet the needs of high-density wiring, so that the substrate body 100 can carry more electrical connection points, thereby realizing a reliable connection between the chip body 400 and the external circuit.

[0062] A chip mounting position 300 for mounting the chip body 400 is also formed on the first surface 101; between two adjacent conductive through holes 110, the chip mounting position 300 extends from the position of the pad 200 corresponding to one conductive through hole 110 to the position of the pad 200 corresponding to the other conductive through hole 110; the chip mounting position 300 is located between the two conductive through holes 110 and does not overlap with the conductive through holes 110.

[0063] It should be noted that the conductive slot 120 can effectively disperse mechanical stress and avoid the problem of reduced mechanical strength caused by the traditional straight hole structure. In addition, the pad 200 is located in the conductive slot 120, so that the connection between the conductive through hole 110 and the pad 200 is more secure, so that the subsequent chip body 400 can be directly electrically connected to other components through the pad 200, or the pad 200 and the conductive through hole 110 can be electrically connected to other components in sequence, which has the advantage of high flexibility.

[0064] Specifically, the high-density interconnect transfer substrate structure provided by the embodiment of the present invention has a conductive groove 120 outside the hole edge of the conductive through hole 110, and a pad 200 is placed in the conductive groove 120, which improves the compactness of the connection layout and also enhances the mechanical strength; in addition, the pad 200 is located in the conductive groove 120, which is equivalent to the pad 200 being arranged around the hole edge of the through hole, thereby enhancing the mechanical strength around the conductive through hole 110 and reducing the risk of damage during subsequent processing. Next, after determining the positions of the conductive through hole 110 and the pad 200, the chip mounting position 300 is set between adjacent conductive through holes 110 without overlapping with the conductive through hole 110, so that the spacing between the chip body 400 and the conductive through hole 110 is further reduced, so that the substrate body 100 meets the requirements of high-density wiring. In summary, the present invention meets the dual requirements of high-density wiring requirements and high mechanical strength.

[0065] Furthermore, the substrate body 100 has an insulating ring 500 inserted in the conductive through hole 110, and the insulating ring 500 extends from the second surface 102 of the substrate body 100 to the first surface 101, and separates the conductive through hole 110 and the conductive slot 120. It should be pointed out that separating the conductive through hole 110 and the conductive slot 120 means separating the conductive through hole 110 and the conductive slot 120 from the inside of the insulating ring 500, that is, the setting of the insulating ring 500 divides the substrate body 100 into two areas, one area is the internal area of ​​the insulating ring 500, and the other area is the hole wall of the conductive through hole 110 and the slot wall area of ​​the conductive slot 120.

[0066] It should be pointed out that the setting of the insulating ring 500 ensures that the conductive through hole 110 and the conductive slot 120 are electrically connected, and by separating the two from the internal area of ​​the insulating ring 500, the electrical connection path is effectively optimized and the mechanical support performance of the substrate body 100 is significantly enhanced. That is, the insulating ring 500 runs through the substrate body 100 and is embedded in the conductive through hole 110, providing strong mechanical support for the key area where the conductive through hole 110 and the conductive slot 120 are connected, compensating for the weakening of the structural strength caused by the opening. The overall stability and durability of the substrate body 100 are enhanced, and the adaptability of the high-density interconnect substrate in a complex electrical environment is further improved.

[0067] Furthermore, a plurality of straight grooves 501 are provided at intervals along the annular direction on the inner side of the insulating ring 500, and the straight grooves 501 extend from the second surface 102 to the first surface 101; and a conducting block 600 is arranged and filled in the straight grooves 501. After the conducting block 600 is filled in the straight grooves 501, a reliable conductive path penetrating the substrate body 100 is formed, so that the substrate body 100 further meets the requirements of high-density wiring; in addition, the setting of the conducting block 600 not only realizes an additional electrical connection, but also forms a mechanical double support structure by fitting with the straight grooves 501. The combination between the conducting block 600 and the straight grooves 501 can effectively disperse mechanical stress during welding, assembly and long-term use, and avoid the problem of damage to the insulating ring 500 or failure of the conductive path due to local stress concentration, thereby significantly improving the reliability and durability of the substrate.

[0068] Furthermore, a positioning ring 700 is also installed on the first surface 101, and the positioning ring 700 includes a first metal inner ring 710, a plastic middle ring 720 and a second metal outer ring 730 which are sequentially arranged from the inside to the outside; the plastic middle ring 720 is arranged corresponding to the position of the insulating ring 500, the second metal outer ring 730 is arranged corresponding to the position of the solder pad 200, and the first metal inner ring 710 is arranged corresponding to the position of the conductive block 600; wherein, after the plastic middle ring 720 is bonded to the insulating ring 500, the first metal inner ring 710 is separated from the substrate body 100.

[0069] First, the introduction of the positioning ring 700, through the position correspondence between the first metal inner ring 710 and the conductive block 600, the positioning ring 700 can achieve precise positioning with the conductive block 600 as the reference, making full use of the fixity and accuracy of the conductive block 600 embedded in the insulating ring 500, so that the installation of the positioning ring 700 has a high degree of reliability and repeatability, thereby ensuring that the relative positions of the plastic middle ring 720 and the insulating ring 500, and the second metal outer ring 730 and the pad 200 are accurately matched, reducing the positioning error and significantly improving the installation accuracy of the positioning ring 700. Secondly, when installing the chip body 400, the positioning ring 700 plays an auxiliary positioning function for the chip body 400, thereby improving the installation accuracy. Finally, after the first metal inner ring 710 is positioned by the conductive block 600, it can form a stepped groove on the inner ring surface of the insulating ring 500 after it is separated from the substrate body 100, forming a height difference with the second metal outer ring 730, thereby reducing the risk of accidental short circuit.

[0070] Embodiment 2:

[0071] like Figures 1 to 6 As shown, in order to facilitate those skilled in the art to understand the technical solution of the high-density interconnect transfer substrate structure in Example 1, this embodiment also provides a method for preparing a high-density interconnect transfer substrate structure, and the preparation method is used to prepare the high-density interconnect transfer substrate structure in Example 1, comprising:

[0072] like Figure 1 As shown, step S100, providing a substrate body 100, dividing a chip mounting position 300 on the substrate body 100, and opening a conductive groove 120 on the first surface 101 of the substrate body 100 corresponding to the position of the chip mounting position 300;

[0073] It should be understood that in the process of dividing the chip mounting positions 300 in this embodiment, the chip mounting positions 300 of the same size or similar size are arranged side by side in sequence as a priority. One end of each conductive slot 120 can be provided with a pad 200, so as to correspond to the left pin of a chip body 400, and the other end of each conductive slot 120 can be provided with another pad 200, so as to correspond to the right pin of a chip body 400; then for any chip body 400, it needs to span two conductive slots 120;

[0074] like Figure 2 As shown, step S200, a conductive through hole 110 is formed on the bottom wall of the conductive slot 120;

[0075] like Figure 3 to Figure 4 As shown, step S300, setting the pad 200 in the conductive slot 120;

[0076] like Figure 5 to Figure 6As shown, step S400, mounting the chip body 400 on the chip mounting position 300, so that the pins of the chip body 400 are electrically connected to the corresponding pads 200;

[0077] Among them, between two adjacent conductive through holes 110, the chip mounting position 300 extends from the position of the pad 200 corresponding to one conductive through hole 110 to the position of the pad 200 corresponding to the other conductive through hole 110; the chip mounting position 300 is located between the two conductive through holes 110 and does not overlap with the conductive through holes 110.

[0078] Furthermore, step S100 specifically includes:

[0079] Step S110, according to the size and position of the chip mounting positions 300, a plurality of chip mounting positions 300 are delineated on the first surface 101 of the substrate body 100, and at least two chip mounting positions 300 are arranged side by side; the middle processing area of ​​the conductive groove 120 is divided into an area between the two chip mounting positions 300, and the edge processing area of ​​the conductive groove 120 is divided into an area where one chip mounting position 300 is far away from another chip mounting position 300 and an area where another chip mounting position 300 is far away from one chip mounting position 300; the width of the middle processing area and the edge processing area are matched with the pin width of the chip body 400 respectively;

[0080] Step S120 , corresponding to the middle processing area and the edge processing area, respectively, opening a conductive slot 120 on the first surface 101 .

[0081] Among them, in step S110, the width design of the middle processing area and the edge processing area is matched with the pin width of the chip body 400, which can not only meet the pin installation requirements of the chip body 400, but also improve the space utilization through width matching, and reduce the contact resistance between the chip pins and the conductive grooves, thereby improving the efficiency and integrity of signal transmission.

[0082] Further, step S200 specifically includes:

[0083] Step S210, using the center point of the conductive slot 120 as a reference, through-processing the conductive through hole 110 from the first surface 101 to the second surface 102 of the substrate body 100 by a laser drilling device; wherein the laser drilling device is well known to those skilled in the art and is not specifically described in this embodiment;

[0084] Step S220, cleaning the inner wall of the conductive through hole 110 by plasma cleaning;

[0085] Step S230 , depositing a conductive layer on the inner wall of the conductive through hole 110 , wherein the conductive layer extends from the second surface 102 to the bottom wall of the conductive trench 120 .

[0086] Among them, the deposition of the conductive layer can be achieved by chemical plating, physical vapor deposition (PVD) or electroplating, ensuring that the conductive layer forms a uniform and stable metal conductive path on the inner wall of the conductive through hole 110; that is, the presence of the conductive layer constructs an efficient conductive path for the conductive through hole 110, enabling it to form a low-impedance electrical connection between the chip pins, the pads 200, and the conductive grooves 120, thereby improving signal transmission efficiency, reducing electrical losses and contact resistance, and thus meeting the needs of high-frequency signal transmission and high-power applications.

[0087] Furthermore, after step S230, the method further includes:

[0088] Step S240, inserting the preformed insulating ring 500 from the second surface 102 into the conductive through hole 110 until the insulating ring 500 is flush with the second surface 102; the insulating ring 500 extends from the second surface 102 of the substrate body 100 to the first surface 101;

[0089] Step S250, forming a straight groove 501 on the inner wall of the insulating ring 500 by means of a laser drilling device, wherein the straight groove 501 extends from the second surface 102 to the first surface 101;

[0090] Next, in step S300 , the pad 200 should be firmly fixed in the conductive slot 120 by means of conductive adhesive or direct welding, while ensuring that it forms a reliable electrical connection with the conductive layer of the conductive through hole 110 .

[0091] Furthermore, after step S300, the method further includes:

[0092] Step S310, flowing adhesive from the first surface 101 into the straight groove 501, and the adhesive covers the groove wall of the straight groove 501 and the end surface of the insulating ring 500;

[0093] Step S320, inserting the conductive block 600 into the straight groove 501, and setting a preformed positioning ring 700 on the first surface 101, wherein the positioning ring 700 includes a first metal inner ring 710, a plastic middle ring 720, and a second metal outer ring 730 which are sequentially sleeved from the inside to the outside; the plastic middle ring 720 is arranged corresponding to the position of the insulating ring 500, the second metal outer ring 730 is arranged corresponding to the position of the pad 200, and the first metal inner ring 710 is arranged corresponding to the position of the conductive block 600;

[0094] Step S330, heating the conductive via 110, curing the adhesive between the conductive block 600 and the straight slot 501, and curing the adhesive between the plastic middle ring 720 and the insulating ring 500; wherein the portion where the conductive block 600 and the straight slot 501 are connected is plastic.

[0095] It is understandable that the adhesive may be a heat-cured silicone adhesive, which has weak adhesion to metal and is suitable for the above-mentioned plastic connection scenario, and can reduce the adhesive residue on the metal part. The above-mentioned setting uses the conductive block 600 as a reference, installs the positioning ring 700, and uses the adhesive to simultaneously bond the conductive block 600 and the straight groove 501, the plastic middle ring 720 and the insulating ring 500, forming a mechanical connection structure with uniform strength, and only requires one-time gluing, which has the advantage of high assembly efficiency.

[0096] As a specific implementation, the process of setting the positioning ring 700 includes:

[0097] Step S331, select two conductive blocks 600, and connect test probes to the conductive blocks 600 from the second surface 102 respectively; it should be noted that the matching relationship between the conductive block 600 and the straight groove 501 is a transition match, so the conductive block 600 can be selected as a preliminary positioning reference;

[0098] Step S332, installing the positioning ring 700 on the first surface 101 of the substrate body 100, and monitoring in real time whether one conductive block 600 is conductive with another conductive block 600 through the first metal inner ring 710;

[0099] Step S333 : When one conductive block 600 is conductively connected to another conductive block 600 through the first metal inner ring 710 , the setting of the positioning ring 700 is completed.

[0100] It is understandable that by selecting two conductive blocks 600 as preliminary positioning references and utilizing the transition fit relationship between the conductive blocks 600 and the straight groove 501, the installation of the positioning ring 700 can be accurately realized. In this process, the conductive blocks 600 provide real-time verification for the correct installation of the positioning ring 700 through electrical conduction feedback, ensuring that the positioning ring 700 is accurately positioned on the substrate body 100. In addition, the transition fit of the conductive blocks 600 can quickly complete the preliminary positioning, and the overall assembly process is accelerated by real-time monitoring of the electrical conduction state. At the same time, in the process of installing the chip body 400, the installation accuracy of the positioning ring 700 is first guaranteed, and then the positioning ring 700 is used to assist in positioning the chip body 400, thereby avoiding structural instability or electrical connection problems caused by positioning errors or component misalignment, thereby improving the reliability of the entire product.

[0101] Furthermore, the conducting block 600 is a titanium block, the first metal inner ring 710 is an aluminum ring; the plastic middle ring 720 and the insulating ring 500 are made of polyethylene;

[0102] After step S400, the method further includes:

[0103] Step S410, flushing the first metal inner ring 710 with a dilute hydrochloric acid solution to dissolve the first metal inner ring 710 to form a stepped groove; specifically, the stepped groove is formed by connecting the plastic middle ring 720 and the insulating ring 500; Step S420, drying the substrate body 100.

[0104] Among them, the design of the stepped groove significantly improves the isolation effect of the conductive path. Its height difference structure not only enhances the electrical isolation effect around the conductive via 110, but also reduces the risk of interference between different conductive paths, such as reducing the risk of mutual interference between the conductive path of the conductive block 600 and the conductive path of the pad 200, further ensuring the integrity and transmission efficiency of high-frequency signals; especially in the scenario of high-density wiring, this design can minimize the possibility of short circuit or signal interference, thereby improving the overall electrical safety and reliability of the substrate. In addition, when the first metal inner ring 710 is not dissolved, it plays a role in reinforcing the positioning ring 700, effectively preventing the positioning ring 700 from deviating, thereby improving the positioning accuracy of the chip body 400.

[0105] In summary, the high-density interconnect transfer substrate structure obtained by this preparation method has the comprehensive advantages of high mechanical strength, high electrical performance and high space utilization. By setting a conductive groove 120 along the conductive through-hole edge 110 and embedding the pad 200, a compact interconnection layout is achieved while increasing the mechanical support strength. The design of the insulating ring 500 and the straight groove 501 optimizes the electrical connection path and significantly enhances the stability and reliability of the structure. The stepped groove structure formed by the plastic middle ring 720 and the insulating ring 500 not only improves the insulation effect, but also reduces the risk of short circuit and signal interference. Combined with the above steps, this method is efficient and accurate, suitable for high-density wiring scenarios, and fully meets the application requirements of complex electrical environments.

[0106] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-density interconnect transfer substrate structure, characterized in that: Comprising a substrate body (100), wherein a plurality of conductive through holes (110) are formed on the substrate body (100), and wherein the conductive through holes (110) penetrate through the substrate body (100); On the first surface (101) of the substrate body (100), a conductive slot (120) is provided outside the edge of the conductive through hole (110), and a solder pad (200) is provided in the conductive slot (120); A chip mounting position (300) for mounting a chip body (400) is also formed on the first surface (101); between two adjacent conductive through holes (110), the chip mounting position (300) extends from the position of a pad (200) corresponding to one conductive through hole (110) to the position of a pad (200) corresponding to another conductive through hole (110); the chip mounting position (300) is located between the two conductive through holes (110) and does not overlap with the conductive through holes (110); The substrate body (100) has an insulating ring (500) inserted in the conductive through hole (110); the insulating ring (500) extends from the second surface (102) of the substrate body (100) to the first surface (101) and separates the conductive through hole (110) and the conductive slot (120).

2. A high-density interconnect transfer substrate structure according to claim 1, characterized in that: A plurality of straight grooves (501) are provided at intervals along the annular direction on the inner side of the insulating ring (500); the straight grooves (501) extend from the second surface (102) to the first surface (101); and conductive blocks (600) are arranged and filled in the straight grooves (501).

3. A high-density interconnect transfer substrate structure according to claim 2, characterized in that: A positioning ring (700) is also mounted on the first surface (101), the positioning ring (700) comprising a first metal inner ring (710), a plastic middle ring (720) and a second metal outer ring (730) which are sequentially sleeved from the inside to the outside; The plastic middle ring (720) is arranged correspondingly to the position of the insulating ring (500), the second metal outer ring (730) is arranged correspondingly to the position of the pad (200), and the first metal inner ring (710) is arranged correspondingly to the position of the conductive block (600); After the plastic middle ring (720) is bonded to the insulating ring (500), the first metal inner ring (710) is separated from the substrate body (100).

4. A method for preparing a high-density interconnect transfer substrate structure, characterized in that: A method for preparing a high-density interconnect transfer substrate structure according to any one of claims 1 to 3, comprising: Step S100, providing a substrate body, dividing chip mounting positions on the substrate body, and opening conductive grooves on the first surface of the substrate body corresponding to the positions of the chip mounting positions; Step S200, opening a conductive through hole on the bottom wall of the conductive slot; Step S300, setting a pad in the conductive slot; Step S400, installing a chip body on a chip mounting position, and electrically connecting the pins of the chip body to corresponding pads; Wherein, between two adjacent conductive through holes, the chip mounting position extends from the position where the pad corresponding to one conductive through hole is located to the position where the pad corresponding to the other conductive through hole is located; the chip mounting position is located between the two conductive through holes and does not overlap with the conductive through holes; After step S200, the method further includes: Step S240, inserting a preformed insulating ring from the second surface into the conductive through hole until the insulating ring is flush with the second surface; the insulating ring extends from the second surface of the substrate body to the first surface; Step S250: forming a straight groove on the inner wall of the insulating ring by using a laser drilling device, wherein the straight groove extends from the second surface to the first surface.

5. The method for preparing a high-density interconnect transfer substrate structure according to claim 4, characterized in that: The step S100 specifically includes: Step S110: Delineate a plurality of chip mounting positions on the first surface of the substrate body according to the size and position of the chip mounting positions, wherein at least two chip mounting positions are arranged side by side; divide the middle processing area of ​​the conductive groove corresponding to the area between the two chip mounting positions, and divide the edge processing area of ​​the conductive groove corresponding to the area where one chip mounting position is far away from the other chip mounting position and the area where the other chip mounting position is far away from the first chip mounting position; the widths of the middle processing area and the edge processing area are matched with the pin widths of the chip body respectively; Step S120 , opening conductive grooves on the first surface corresponding to the middle processing area and the edge processing area respectively.

6. The method for preparing a high-density interconnect transfer substrate structure according to claim 5, characterized in that: The step S200 specifically includes: Step S210, using the center point of the conductive groove as a reference, drilling a conductive through hole from the first surface to the second surface of the substrate body by a laser drilling device; Step S220, cleaning the inner wall of the conductive through hole by plasma cleaning; Step S230 , depositing a conductive layer on the inner wall of the conductive through hole, wherein the conductive layer extends from the second surface to the bottom wall of the conductive groove.

7. The method for preparing a high-density interconnect transfer substrate structure according to claim 6, characterized in that: After step S300, the method further includes: Step S310, flowing adhesive from the first surface into the straight groove, and the adhesive covers the groove wall of the straight groove and the end surface of the insulating ring; Step S320, inserting a conducting block into the straight groove, and setting a positioning ring on the first surface, wherein the positioning ring includes a first metal inner ring, a plastic middle ring, and a second metal outer ring which are sequentially sleeved from the inside to the outside; the plastic middle ring is set correspondingly to the position of the insulating ring, the second metal outer ring is set correspondingly to the position of the pad, and the first metal inner ring is set correspondingly to the position of the conducting block; Step S330, heating the conductive through hole to solidify the adhesive between the conductive block and the straight slot, and solidify the adhesive between the plastic middle ring and the insulating ring; The part where the conducting block is connected to the straight slot is made of plastic.

8. The method for preparing a high-density interconnect transfer substrate structure according to claim 7, characterized in that: The process of setting the positioning ring includes: Step S331, selecting two conductive blocks, and connecting test probes to the conductive blocks from the second surface respectively; Step S332, installing a positioning ring on the first surface of the substrate body, and monitoring in real time whether one conductive block is conductive with another conductive block through the first metal inner ring; Step S333: When one conductive block is connected to another conductive block through the first metal inner ring, the setting of the positioning ring is completed.

9. The method for preparing a high-density interconnect transfer substrate structure according to claim 7, characterized in that: The conductive block is a titanium block, the first metal inner ring is an aluminum ring; the plastic middle ring and the insulating ring are made of polyethylene; After step S400, the method further includes: Step S410, flushing the first metal inner ring with a dilute hydrochloric acid solution to dissolve the first metal inner ring to form a stepped groove; Step S420, drying the substrate body.

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