Hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line

Abstract

The invention provides a hybrid structure based on a substrate integrated waveguide and a substrate integrated coaxial line. The hybrid structure comprises a substrate integrated coaxial line structure and a substrate integrated waveguide structure, the substrate integrated coaxial line structure and the substrate integrated waveguide structure are horizontally arranged side by side or stacked up and down, and the substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor. The substrate integrated waveguide structure has the characteristic of low loss in a high frequency band and is suitable for high-frequency signal transmission in a TE10 mode; and the substrate integrated coaxial line structure supports low-frequency-band TEM mode transmission and is suitable for baseband signals. The hybrid structure provided by the invention can provide high-quality transmission paths in different frequency bands, and improves the efficiency and the applicable frequency range of the system.

Description

Technical Field

[0001] The present invention relates to the technical field of chip-level high-speed data transmission interconnection, and in particular to a hybrid structure based on substrate-integrated waveguide and substrate-integrated coaxial line. Background Art

[0002] With the rapid advancement of information technology, the demand for terabit-level data transmission rates is becoming increasingly urgent. To meet this demand, high-speed electrical interconnect technology has become a key link in building high-performance systems. However, traditional interconnect structures (such as microstrip lines, strip lines, and coplanar waveguides) usually use quasi-TEM (transverse electromagnetic waves) or TEM modes. Although they are suitable for baseband signal transmission at gigabit and below rates, their performance is gradually limited at higher frequencies.

[0003] Specifically, under low-frequency conditions, the transmission performance of traditional interconnect structures is relatively ideal; however, as the frequency increases, its open physical design leads to a significant increase in conductor loss and dielectric loss, which severely limits the transmission distance and rate of signals. In addition, in high-speed transmission environments, problems such as crosstalk, delay, signal distortion, and inter-symbol interference (ISI) will also occur, which not only weakens signal integrity, but also causes serious electromagnetic interference (EMI).

[0004] To address the above challenges, researchers have proposed methods such as serial links, equalization technology, and pre-emphasis to improve crosstalk and expand bandwidth. Although these measures have alleviated the performance bottleneck of traditional electrical interconnection in high-frequency environments to a certain extent, they cannot completely eliminate the EMI problem and increase the complexity and cost of the system. Therefore, traditional electrical interconnection technology is increasingly insufficient in meeting future high data rate requirements.

[0005] After searching, it was found that the patent with application publication number CN105226360A discloses a substrate integrated coaxial waveguide interconnect array structure, including at least one single-channel structure, the inner conductor is arranged between the first outer conductor layer and the second outer conductor layer; the first dielectric layer is arranged between the first outer conductor layer and the inner conductor, and the second dielectric layer is arranged between the inner conductor and the second outer conductor layer; the metallized through-hole array vertically penetrates the structure. The first outer conductor layer, the second outer conductor layer, and the metallized through-hole array constitute the outer conductor, and multiple single-channel structures form an array in the horizontal and vertical directions and share the outer conductor. Adjacent single-channel structures in the vertical direction share the same outer conductor layer. Adjacent single-channel structures in the horizontal direction share the same column of metallized through-hole arrays. This patent still needs to be further improved in terms of high-frequency and low-frequency signal transmission performance. Summary of the invention

[0006] In view of the defects in the prior art, an object of the present invention is to provide a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line.

[0007] The present invention provides a hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line, comprising a substrate integrated coaxial line structure and a substrate integrated waveguide structure; the substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side by side or stacked up and down; the substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor.

[0008] Optionally, the substrate integrated waveguide structure includes, from top to bottom, a first upper metal layer, a first dielectric layer and a first lower metal layer, a first metallized through-hole array is embedded in the first dielectric layer, the first metallized through-hole array is divided into two columns and connects the first upper metal layer and the first lower metal layer, and the substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized through-hole array, the first upper metal layer and the first lower metal layer.

[0009] Optionally, the substrate-integrated coaxial line structure includes, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor and a second lower metal layer, a second metallized through-hole array is embedded in the second dielectric layer, the second metallized through-hole array is divided into two columns and connects the second upper metal layer and the second lower metal layer; the inner conductor is located between the two columns of the second metallized through-hole array, the inner conductor is used to transmit a transverse electromagnetic wave mode, and is suitable for the transmission of low-frequency signals.

[0010] Optionally, the substrate integrated waveguide structure and the substrate integrated coaxial line structure are placed side by side on the same dielectric layer and share a metallized through hole array on one side.

[0011] Optionally, the substrate-integrated coaxial line structure is placed above the substrate-integrated waveguide structure, and the two share the first upper metal layer above the substrate-integrated waveguide structure, that is, the first upper metal layer of the substrate-integrated waveguide structure is also the second lower metal layer of the substrate-integrated coaxial line structure.

[0012] Optionally, the substrate integrated waveguide structure is placed on the substrate integrated coaxial line structure, and the two share the second upper metal layer above the substrate integrated coaxial line structure, that is, the second upper metal layer of the substrate integrated coaxial line structure is also the first lower metal layer of the substrate integrated waveguide structure.

[0013] Optionally, the metallized through holes in the first metallized through hole array and the second metallized through hole array are arranged at equal intervals along the length direction of the physical structure.

[0014] Optionally, the operating frequency band of the substrate integrated coaxial line structure ranges from direct current to a cut-off frequency f1.

[0015] Optionally, the operating frequency band of the substrate integrated waveguide structure ranges from a cutoff frequency f1 to a cutoff frequency f2, and the cutoff frequency f2 is twice the cutoff frequency f1.

[0016] Furthermore, the hybrid structure uses the TEM mode to transmit signals at low frequencies and uses the TE10 mode to transmit signals at high frequencies.

[0017] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0018] The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line provided by the present invention is suitable for high-frequency signal transmission in TE10 mode because the substrate integrated waveguide has low loss characteristics in the high frequency band; while the substrate integrated coaxial line structure supports TEM mode transmission in the low frequency band and is suitable for baseband signals. Through this hybrid design structure, a wide frequency band can be efficiently covered in a single physical system, and high-quality transmission can be achieved from low-frequency baseband to high-frequency microwave signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

[0020] Figure 1 The S21 curves of substrate integrated coaxial line (SICL) and substrate integrated waveguide (SIW) from low frequency to high frequency;

[0021] Figure 2 It is a schematic diagram of the principle of a hybrid structure based on a substrate integrated waveguide and a substrate integrated coaxial line in one embodiment of the present invention;

[0022] Figure 3 A schematic diagram of the structure of a substrate integrated waveguide in one embodiment of the present invention;

[0023] Figure 4 It is a schematic structural diagram of a substrate-integrated coaxial line in one embodiment of the present invention;

[0024] Figure 5 A model diagram of a SIW-SICL structure (SICL is located on the same side of SIW) in one embodiment of the present invention;

[0025] Figure 6 A model diagram of a SIW-SICL structure (SICL is located above SIW) in one embodiment of the present invention;

[0026] Figure 7 A model diagram of a SIW-SICL structure (SICL is located below SIW) in one embodiment of the present invention;

[0027] Figure 8The S11 simulation diagram at 0-25 GHz and the S33 simulation diagram at 25-50 GHz of the SIW-SICL structure (SICL is located on the same side of the SIW, f1=25 GHz, f2=50 GHz) in one embodiment of the present invention.

[0028] Fig. 9 The S21 simulation diagram at 0-25 GHz and the S43 simulation diagram at 25-50 GHz of the SIW-SICL structure (SICL is located on the same side of the SIW, f1=25 GHz, f2=50 GHz) in one embodiment of the present invention.

[0029] Fig.10 The S11 simulation diagram at 0-25 GHz and the S33 simulation diagram at 25-50 GHz of the SIW-SICL structure (SICL is located above the SIW, f1=25 GHz, f2=50 GHz) in one embodiment of the present invention.

[0030] Fig.11 The S21 simulation diagram at 0-25 GHz and the S43 simulation diagram at 25-50 GHz of the SIW-SICL structure (SICL is located above the SIW, f1=25 GHz, f2=50 GHz) in one embodiment of the present invention.

[0031] Fig.12 The S11 simulation diagram at 0-25 GHz and the S33 simulation diagram at 25-50 GHz of the SIW-SICL structure (SICL is located below the SIW, f1=25 GHz, f2=50 GHz) in one embodiment of the present invention.

[0032] Fig.13 The S21 simulation diagram at 0-25 GHz and the S43 simulation diagram at 25-50 GHz are shown in Figure 2 for a SIW-SICL structure (SICL is located below the SIW, f1=25 GHz, f2=50 GHz) in an embodiment of the present invention. DETAILED DESCRIPTION

[0033] The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0034] The substrate-integrated waveguide structure is known for its low loss and high quality factor in high-frequency applications, and is suitable for high-frequency transmission that needs to maintain signal integrity; while the substrate-integrated coaxial cable structure supports the transverse electromagnetic TEM mode, which is suitable for low-frequency signal transmission, has low dispersion characteristics, and can effectively transmit DC and low-frequency signals.

[0035] Figure 1 The S21 curve of substrate integrated coaxial line (SICL) and substrate integrated waveguide (SIW) from low frequency to high frequency is shown, which shows the S21 parameters of substrate integrated coaxial line and substrate integrated waveguide of the same material and size, where the solid line is the substrate integrated coaxial line and the dotted line is the substrate integrated waveguide. The closer the S21 parameter is to 0, the smaller the loss of the transmission line. It can be seen from the curve that SIW has a very poor transmission effect at low frequency, and SICL has a better low-loss transmission effect at low frequency, which can make up for the defects of SIW at low frequency. Although the prior art (such as CN105226360A) can realize the parallel transmission of multi-channel signals with wide bandwidth, the defect is that the loss of substrate integrated coaxial line increases rapidly with the increase of frequency, so it does not meet the demand for low power consumption at high frequency. On the contrary, substrate integrated waveguide cannot transmit DC signals, but in its passband, the loss increases slowly with the increase of frequency.

[0036] In order to meet the needs of high-frequency and low-frequency signal transmission, Figure 2 The innovative structural design of the substrate integrated waveguide (SIW) combined with the substrate integrated coaxial line (SICL) proposed in the embodiment of the present invention is shown. The design aims to comprehensively utilize the advantages of the substrate integrated coaxial line with good conduction performance and low loss at low frequency (DC), and the characteristics of the substrate integrated waveguide with low loss at high frequency, so as to achieve efficient transmission in a wide frequency band. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line provided in one embodiment of the present invention includes a substrate integrated coaxial line structure and a substrate integrated waveguide structure; the substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side by side or stacked up and down, and the substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor to form a SIW-SICL structure, which realizes the efficient integration of SIW and SICL, and can meet the transmission requirements of low-frequency baseband signals and support low-loss transmission of high-frequency signals in the same physical structure. This hybrid structural design of SIW and SICL can effectively expand the frequency band coverage of the system and significantly improve the performance of signal transmission, providing strong support for the new generation of data transmission systems.

[0037] Reference Figure 3 In some embodiments, the substrate integrated waveguide structure includes, from top to bottom, a first upper metal layer, a first dielectric layer, and a first lower metal layer, a first metallized through-hole array is embedded in the first dielectric layer, the first metallized through-hole array runs through the first dielectric layer, the first metallized through-hole array is divided into two columns and connects the first upper metal layer and the first lower metal layer, and the substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized through-hole array, the first upper metal layer, and the first lower metal layer, which is conducive to low-loss transmission of high-frequency signals.

[0038] Reference Figure 4In some embodiments, the substrate-integrated coaxial line structure includes, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor, and a second lower metal layer, the second metallized through-hole array is embedded in the second dielectric layer, the second metallized through-hole array runs through the second dielectric layer, the second metallized through-hole array is divided into two columns and connects the second upper metal layer and the second lower metal layer; the inner conductor is located between the two columns of the second metallized through-hole array, the inner conductor is used to transmit a transverse electromagnetic wave mode, and is suitable for the transmission of low-frequency signals.

[0039] The hybrid structure in the embodiment of the present invention is composed of the upper metal layer, the lower metal layer, the through-hole array, the dielectric layer and the inner conductor of the SICL in the SIW, and adopts a quasi-closed design to achieve low loss and efficient transmission in a wide frequency band. In this structural design, the inner conductor of the substrate-integrated coaxial line structure is embedded in the dielectric layer, providing a low-loss path for electromagnetic wave propagation. The metallized through-hole array and the upper and lower metal layers together form a shielding structure, which provides an electromagnetic isolation effect, reduces signal leakage and interference, and ensures efficient signal transmission. The hybrid structure realizes the integrated design of the substrate-integrated coaxial waveguide structure and the substrate-integrated coaxial line structure at the circuit board level, packaging level and chip level, combining the advantages of both, thereby improving the performance of microwave circuits and supporting efficient interconnection requirements at different integration levels.

[0040] based on Figure 2 The schematic diagram shown in the figure can be rotated by 0°, 90°, and 270° in the direction of the arrow in the figure to obtain the specific layout of the hybrid structure in the embodiment of the present invention. Figure 5 As shown, in some optional embodiments, the substrate integrated waveguide structure and the substrate integrated coaxial line structure are placed side by side on the same dielectric layer, sharing the metallized through-hole array on one side, and the other layers are arranged horizontally and correspondingly, forming a structural layout in which the SICL is located on the same side of the SIW. This planar shared layout can simplify the manufacturing process while reducing the thickness of the overall structure, thereby achieving efficient signal transmission in a wide frequency band. This structure can not only maintain the low-loss high-frequency transmission characteristics of SIW, but also take advantage of the efficient transmission advantages of SICL in the low-frequency band, and is suitable for application scenarios with high requirements for space utilization and integration.

[0041] In the above embodiment of the present invention, each column of metallized through hole arrays includes a plurality of metallized through holes, and the plurality of metallized through holes in the two columns of metallized through hole arrays are arranged at equal intervals along the length direction of the physical structure, that is, the distance between two adjacent metallized through holes is equal. The number of metallized through holes in each column of metallized through hole arrays depends on the length of the physical structure.

[0042] like Figure 6As shown, in some optional embodiments, the substrate integrated coaxial line structure is placed above the substrate integrated waveguide structure, and the two share the first upper metal layer above the substrate integrated waveguide structure, that is, the first upper metal layer of the substrate integrated waveguide structure is also the second lower metal layer of the substrate integrated coaxial line structure, forming a structural layout in which the SICL is located above the SIW.

[0043] In this layout, the SICL structure is placed above the SIW structure, and a more compact structural layout is achieved by sharing the first upper metal layer above the SIW. In this configuration, the SICL is responsible for the TEM mode transmission in the low frequency band, while the SIW transmits the TE10 mode signal in the high frequency band, thereby achieving the separation of high frequency and low frequency signals in the same structure, reducing signal interference, and is particularly suitable for the needs of multi-band communication systems.

[0044] like Figure 7 As shown, in some optional embodiments, the substrate integrated waveguide structure is placed on the substrate integrated coaxial line structure, and the two share the second upper metal layer above the substrate integrated coaxial line structure, that is, the second upper metal layer of the substrate integrated coaxial line structure is also the first lower metal layer of the substrate integrated waveguide structure, forming a structural layout in which the SIW is located above the SICL.

[0045] This layout places the SIW on top of the SICL, sharing the metal layer above the SICL to form a top-to-bottom hybrid structure. This configuration allows the baseband signal in the low-frequency band to be efficiently transmitted by the SICL below, while in the high-frequency band, the SIW achieves a low-loss transmission path through the TE10 mode. This top-to-bottom layered design optimizes the electromagnetic characteristics of the SIW and SICL in multi-band applications, providing a more flexible solution for multi-functional communication systems.

[0046] The hybrid structure in the above embodiment of the present invention adopts a quasi-closed design, and three physical layout forms are proposed: the first is that SIW and SICL are placed flat, and the two are arranged side by side on the same side, and SICL and SIW are arranged in a left-right side-by-side manner to achieve a structural configuration of the same side coplanar, which is convenient for smooth transition; the second is a stacking structure with SICL on top and SIW on the bottom, forming a vertical stacking configuration of upper and lower layers, forming a compact design, suitable for systems with limited space; the third is the opposite upper and lower stacking method, SICL is located below SIW, forming another vertical stacking structure, realizing structural stacking optimization, which helps to optimize low-frequency signal transmission. As a result, it is possible to optimize the signal transmission characteristics within a wide frequency band, provide high-quality transmission paths in different frequency bands, and improve the efficiency of the system and the applicable frequency range.

[0047] In the above embodiment of the present invention, the operating frequency band of the substrate integrated coaxial line structure ranges from DC to cutoff frequency f1. The operating frequency band of the substrate integrated waveguide structure ranges from cutoff frequency f1 to cutoff frequency f2, and the cutoff frequency f2 is twice the cutoff frequency f1.

[0048] For substrate-integrated waveguides and substrate-integrated coaxial lines, the key parameter is the cutoff frequency fc. Assume that the diameter of each metallized through hole is d, the spacing between two adjacent metallized through holes is s, and the width between two adjacent metallized through hole arrays is w. The thickness of the upper and lower metal layers and the inner conductor is t; the thickness of the dielectric layer is h, and the relative dielectric constant of the dielectric is ε r ; The length of the physical structure is L. If the speed of light in a vacuum is c, the calculation formula for the cutoff frequency fc is:

[0049]

[0050] At this time, the single-mode (TEM) operating bandwidth of the substrate integrated coaxial line is from DC to fc, and the single-mode operating bandwidth of the substrate integrated coaxial line is from fc to 2fc.

[0051] In the structure proposed in the above embodiment of the present invention, when the substrate integrated waveguide is above the substrate integrated coaxial line, or the substrate integrated coaxial line is above the substrate integrated waveguide, the dimensions w, d, s, etc. of the substrate integrated waveguide and the substrate integrated coaxial line are naturally the same, and the relative dielectric constant ε of the material is r So at this time, f1=fc, f2=2fc. The working bandwidth of the whole structure is from DC to 2fc, and the area occupied is the smallest.

[0052] In the structure proposed in the above embodiment of the present invention, when the substrate integrated waveguide is on the side of the substrate integrated coaxial line, the dimensions d, s, etc. of the substrate integrated waveguide and the substrate integrated coaxial line are naturally the same, and the dimensions w of the two must be set to be the same, so that f1=fc, f2=2fc can be satisfied. The working bandwidth of the whole structure is from DC to 2fc, and the thickness is minimal.

[0053] Therefore, the hybrid structure of substrate-integrated waveguide and substrate-integrated coaxial line in the above embodiment of the present invention is not a simple combination of the two, but the result of minimization design in the horizontal direction (area) and the vertical direction (thickness) on the basis of satisfying the continuous working frequency band characteristics of the two, which is in line with the development trend of high-density and miniaturized integrated circuits.

[0054] It should be noted that, in addition to the above three hybrid structures, in some other implementations, other forms of structural layouts may also be used as long as the same functions as above can be achieved.

[0055] In the above embodiment of the present invention, the multi-level hybrid layout of SIW and SICL shows significant design flexibility, can adapt to the diversified transmission requirements from low-frequency baseband signals to high-frequency microwave signals, and is suitable for the application of future highly integrated RF and microwave systems. The hybrid structure uses the TEM mode to transmit signals at low frequencies and the TE10 mode to transmit signals at high frequencies.

[0056] Continue to refer to Figure 5-Figure 7 , three different device placement methods are given, among which: Figure 5 SIW and SICL are placed in parallel. Figure 6 SICL is placed above SIW. Figure 7 SICL is placed under SIW. Figure 5 The thickness of the dielectric layer h, the thickness of the metal layer t, the diameter of the through hole d, the distance between the centers of the two through holes s, the width of the inner conductor b, the length of the inner conductor L, the height of the inner conductor t, and the distance between the two rows of through holes w are marked in the figure. The width of the hybrid structure is 2w. Port 1 represents the wave port on the SICL side, and the corresponding wave port is port 2. Similarly, port 3 on the SIW side corresponds to port 4. Figure 6 and Figure 7 Both use Figure 5 The same size parameter settings, only the placement method is different. The spacing s of the metallized through holes should be as small as possible within the process allowable range to ensure good electromagnetic shielding performance. Usually s needs to be less than or equal to 2d.

[0057] Taking the hybrid structure of substrate-integrated coaxial waveguide and substrate-integrated coaxial line at the circuit board level as an example, RogersRT / duroid 5880 material (dielectric constant is 2.2, dielectric loss tangent is 0.0009) is selected as the dielectric layer. The specific design parameters are as follows: inner conductor width b = 0.1mm, metal layer thickness t = 0.01mm, dielectric layer thickness h = 0.254mm, through hole diameter d = 0.4mm, through hole spacing s = 0.8mm, waveguide length L = 18mm, width w = 3mm. The above cut-off frequency fc calculation formula can be used to calculate that the operating frequency band of the substrate-integrated coaxial line structure ranges from DC to 25GHz, and the operating frequency band of the substrate-integrated waveguide structure ranges from 25GHz to 50GHz.

[0058] The wave ports of the hybrid structure include port 1, port 2, port 3 and port 4. The insertion loss parameters S21 and S43 parameters, and the return loss parameters S11 and S33 parameters in the hybrid structure are respectively as follows: Figure 8-Figure 13 As shown, Figure 8 and Fig. 9 They were shown Figure 5 Return loss and insertion loss under placement method, Fig.10 and Fig.11Shown Figure 6 Return loss and insertion loss under placement method, Fig.12 and Fig.13 It shows Figure 7 The return loss and insertion loss under the placement mode, the horizontal axis represents frequency (Frequence (GHz)), and the vertical axis represents decibel (dB). S11 represents the ratio of the signal reflected from port 1 to the input signal when the signal is input from port 1; S21 represents the ratio of the output signal to the input signal when the signal is input from port 1 and transmitted to port 2; S33 represents the ratio of the signal reflected from port 3 to the input signal when the signal is input from port 3; S43 represents the ratio of the output signal to the input signal when the signal is input from port 3 and transmitted to port 4.

[0059] Depend on Figure 8-Figure 13 It can be seen that at low frequencies (DC-25GHz), the hybrid structure can transmit effectively and the S21 parameter is very close to 0, which means that it can transmit effectively and with low loss at low frequencies. Similarly, it can be seen that the S43 parameter is also close to 0 at high frequencies (25-50GHz), which further illustrates its advantage of low loss.

[0060] According to the above simulation results, the hybrid structure of substrate-integrated waveguide and substrate-integrated coaxial line provided in the above embodiments of the present invention has the advantages of wide bandwidth, low loss and strong anti-electromagnetic interference capability, and is suitable for multi-channel parallel high-speed data transmission at circuit board level / packaging level / chip level.

[0061] The SIW-SICL hybrid structure in the above embodiment of the present invention includes two upper and lower metal layers, a dielectric layer and an inner conductor, etc. The metallized through-hole array is embedded in the dielectric layer to form a stable electromagnetic shield. By supporting high-frequency and low-frequency signal transmission in the same physical structure, the structural design significantly expands the frequency band coverage of the system and improves the transmission efficiency. The structure combines the low-loss high-frequency transmission characteristics of SIW with the efficient baseband signal transmission advantages of SICL at low frequency, achieving better signal integrity and anti-interference performance. The integration of SIW and SICL not only effectively enhances the transmission performance of the system, but also provides a reliable and efficient solution for future data transmission needs.

[0062] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various modifications or variations within the scope of the claims, which does not affect the essence of the present invention. The above preferred features can be used in any combination without conflicting with each other.

Claims

1. A hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line, characterized in that: It comprises a substrate integrated coaxial line structure and a substrate integrated waveguide structure; the substrate integrated coaxial line structure and the substrate integrated waveguide structure are arranged horizontally side by side or stacked up and down; the substrate integrated coaxial line structure and the substrate integrated waveguide structure share an outer conductor.

2. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that: The substrate integrated waveguide structure includes, from top to bottom, a first upper metal layer, a first dielectric layer and a first lower metal layer, a first metallized through-hole array is embedded in the first dielectric layer and connects the first upper metal layer and the first lower metal layer, the first metallized through-hole array is divided into two columns, and the substrate integrated waveguide structure forms an effective waveguide boundary through the first metallized through-hole array, the first upper metal layer and the first lower metal layer.

3. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 2, characterized in that: The substrate integrated coaxial line structure includes, from top to bottom, a second upper metal layer, a second dielectric layer, an inner conductor and a second lower metal layer, a second metallized through-hole array is embedded in the second dielectric layer, the second metallized through-hole array is divided into two columns and connects the second upper metal layer and the second lower metal layer; the inner conductor is located between the two columns of the second metallized through-hole array, the inner conductor is used to transmit a transverse electromagnetic wave mode, and is suitable for the transmission of low-frequency signals.

4. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 3, characterized in that: The substrate integrated waveguide structure and the substrate integrated coaxial line structure are placed side by side on the same dielectric layer and share a metallized through hole column on one side.

5. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 3, characterized in that: The substrate integrated coaxial line structure is placed above the substrate integrated waveguide structure, and the two share a first upper metal layer above the substrate integrated waveguide structure.

6. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 3, characterized in that: The substrate integrated waveguide structure is placed on the substrate integrated coaxial line structure, and the two share the second upper metal layer above the substrate integrated coaxial line structure.

7. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 3, characterized in that: The metallized through holes in the first metallized through hole array and the second metallized through hole array are arranged at equal intervals along the length direction of the physical structure.

8. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that: The operating frequency band of the substrate integrated coaxial line structure ranges from direct current to cut-off frequency f1.

9. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that: The operating frequency band of the substrate integrated waveguide structure ranges from a cut-off frequency f1 to a cut-off frequency f2, and the cut-off frequency f2 is twice the cut-off frequency f1.

10. The hybrid structure based on substrate integrated waveguide and substrate integrated coaxial line according to claim 1, characterized in that: The hybrid structure adopts the TEM mode to transmit signals at low frequencies and adopts the TE10 mode to transmit signals at high frequencies.

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