Diode, power module and electronic equipment

Abstract

The invention provides a diode, a power module and electronic equipment. The diode comprises a substrate layer, a first metal layer and at least two resistors, wherein the first metal layer and the at least two resistors are arranged on the substrate layer; the first metal layer comprises a first metal electrode and a second metal electrode; the first metal electrode is used for forming a first connecting terminal of the diode; and the second metal electrode is connected with at least one resistor and is used for forming a second connecting terminal of the diode. Therefore, in a circuit structure formed by electrically connecting the first metal electrodes, the resistance value of the diode is the internal resistance of the diode, and in a circuit structure formed by electrically connecting the second metal electrodes, the resistance value of the diode is the sum of the internal resistance of the diode and the resistance value of the resistor connected with the second metal electrodes. Therefore, the diode can have at least two different resistance value gears, is suitable for a circuit structure with at least two resistance value ranges, and facilitates the expansion of the application range of the diode.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor devices, and in particular to a diode, a power module and an electronic device. Background Art

[0002] A diode is a semiconductor device composed of a P-type semiconductor and an N-type semiconductor. Its core is a PN junction. The diode has unidirectional conductivity. When a forward voltage is applied to the anode (P pole) and cathode (N pole) of the diode, the diode is turned on. When a reverse voltage is applied to the anode and cathode, the diode is cut off. Based on this conduction and cutoff characteristics, the diode can be equivalent to the on and off of a switch in the circuit structure.

[0003] At present, the structure of the diode results in a single resistance value of the diode, so that the diode can only be applied to a circuit structure with a resistance range, which greatly limits the application scope of the diode. Summary of the invention

[0004] In view of this, the present application provides a diode, a power module and an electronic device to at least solve the problem that the current diode has a single resistance value and a limited scope of application.

[0005] To achieve the above purpose, the technical solution of this application is implemented as follows:

[0006] The present application provides a diode, comprising a base layer and a first metal layer and at least two resistors arranged on the base layer; the first metal layer comprises a first metal electrode and a second metal electrode; the first metal electrode is used to form a first connecting terminal of the diode; the second metal electrode is connected to at least one of the resistors to form a second connecting terminal of the diode.

[0007] Optionally, there are at least two second metal electrodes, and each second metal electrode is connected to one resistor to form at least two second connection terminals.

[0008] Optionally, the resistance value of each resistor is different.

[0009] Optionally, each of the resistors is a polysilicon resistor.

[0010] Optionally, the first metal electrode is disposed in an edge region of the base layer, and the second metal electrode is disposed in a middle region of the base layer.

[0011] Optionally, it also includes an oxide layer arranged on the base layer; the first metal layer is arranged on the oxide layer, and the oxide layer is used to achieve electrical isolation between the first metal layer and the base layer.

[0012] Optionally, a first through hole is provided on the oxide layer, the first through hole penetrates the oxide layer along a thickness direction of the oxide layer, and the first metal electrode is connected to the base layer through the first through hole.

[0013] Optionally, the oxide layer covers at least two of the resistors, and a second through hole is further provided on the oxide layer, the second through hole penetrates the oxide layer along the thickness direction of the oxide layer, and the second metal electrode is connected to the resistor through the second through hole.

[0014] Optionally, an opening size of the first through hole is larger than an opening size of the second through hole.

[0015] Optionally, it further includes a second metal layer disposed on the base layer, the second metal layer is connected to a side of the base layer facing away from the first metal layer, and the second metal layer is used to form a third connection terminal of the diode.

[0016] Optionally, the first metal electrode and the second metal electrode are spaced apart from each other.

[0017] The present application also provides a power module, comprising any of the diodes described above.

[0018] The present application also provides an electronic device, comprising the aforementioned power module.

[0019] Compared with the prior art, the diode, power module and electronic device described in this application have the following advantages:

[0020] The diode of the present application includes a substrate layer, a first metal layer and at least two resistors arranged on the substrate layer; the first metal layer includes a first metal electrode and a second metal electrode; the first metal electrode is used to form a first connection terminal of the diode; the second metal electrode is connected to at least one resistor to form a second connection terminal of the diode. When the circuit is connected, the first metal electrode or the second metal electrode is electrically connected to the connection terminal of the circuit as an anode electrode, wherein, in the circuit structure formed by the electrical connection between the first metal electrode and the connection terminal of the circuit, the resistance of the diode is the internal resistance of the diode itself, and in the circuit structure formed by the electrical connection between the second metal electrode and the connection terminal of the circuit, the resistance of the diode is the sum of the internal resistance of the diode itself and the resistance of the resistor connected to the second metal electrode, so that the diode can have at least two different resistance gears, which is suitable for circuit structures with at least two resistance ranges, and helps to expand the application range of the diode.

[0021] The power module and the electronic device of the present application have the same or similar advantages as the prior art and the aforementioned diode, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0023] Figure 1 is a schematic diagram of the hierarchical structure of a diode in an embodiment of the present application;

[0024] Figure 2 is a schematic diagram of the structure of a diode in an embodiment of the present application;

[0025] Figure 3 It is a schematic diagram of the circuit structure of a diode in an embodiment of the present application.

[0026] Description of reference numerals:

[0027] 1-first metal layer, 11-first metal electrode, 12-second metal electrode, 2-resistance, 3-base layer, 31-P-type semiconductor doping region, 32-N-type semiconductor doping region, 33-substrate layer, 4-oxide layer, 41-first through hole, 42-second through hole, 5-second metal layer. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0030] It should be understood that the reference to "some embodiments" throughout the specification means that specific features, structures or characteristics related to the embodiments are included in at least one embodiment of the present application. Therefore, the "in some embodiments" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner.

[0031] The following describes in detail a diode, a power module and an electronic device provided by the present application by listing specific embodiments.

[0032] Figure 1 is a schematic diagram of the hierarchical structure of a diode in an embodiment of the present application, Figure 2 This is a schematic diagram of the structure of a diode in the embodiment of the present application. Please refer to Figure 1 and Figure 2 An embodiment of the present application provides a diode, which includes a base layer 3 and a first metal layer 1 and at least two resistors 2 arranged on the base layer 3; the first metal layer 1 includes a first metal electrode 11 and a second metal electrode 12; the first metal electrode 11 is used to form a first connecting terminal of the diode; the second metal electrode 12 is connected to at least one of the resistors 2 to form a second connecting terminal of the diode.

[0033] In the embodiment of the present application, the diode includes but is not limited to a light emitting diode, a voltage regulator diode, a switching diode, a bootstrap diode, a rectifier diode, a varactor diode, a Schottky diode, etc., and can be applied to power supply circuits, signal processing circuits, voltage regulator circuits, logic circuits, protection circuits, etc. The diode includes a base layer 3, a first metal layer 1 and a second metal layer 5, wherein the first metal layer 1 and the second metal layer 5 are arranged on both sides of the base layer 3, wherein one forms an anode electrode and the other forms a cathode electrode. Figure 1 In the schematic diagram of the hierarchical structure of the diode shown, the first metal layer 1 is arranged on the upper side of the base layer 3 to form a front anode electrode, and the second metal layer 5 is arranged on the lower side of the base layer 3 to form a back cathode electrode.

[0034] The anode electrode is the positive pole of the diode, one end of the P-type semiconductor material in the diode, and also the electrode that receives the external positive voltage. The anode electrode is mainly used to receive the external positive voltage. When the anode voltage is higher than the cathode voltage plus the forward voltage drop of the diode, the diode will be turned on, allowing current to pass. The anode electrode is usually made of metal or alloy materials, which are deposited on the semiconductor material through specific process methods (such as metal evaporation, vacuum deposition, etc.) to form a stable electrode structure. The cathode electrode is the negative pole of the diode, one end of the N-type semiconductor material in the diode, and also the electrode that receives the external negative voltage or zero voltage. The cathode electrode is mainly used to receive the external negative voltage or zero voltage. When the cathode voltage is lower than the anode voltage minus the forward voltage drop of the diode, the diode is in the cut-off state and the current cannot pass. The cathode electrode is similar to the anode electrode, and is also made of metal or alloy materials, and is deposited on the semiconductor material through the same or similar process methods to form a stable electrode structure. In practical applications, attention should be paid to the preparation process and quality control of the anode electrode and the cathode electrode to ensure the performance and stability of the diode. At the same time, attention should also be paid to the positive and negative polarity of the diode to avoid reverse connection and damage to the circuit.

[0035] The base layer 3 is the semiconductor layer of the diode, which is composed of a P-type semiconductor doping region 31 and an N-type semiconductor doping region 32. A PN junction is formed between the P-type semiconductor doping region 31 and the N-type semiconductor doping region 32. At the PN junction interface, a space charge layer and a self-built electric field are formed on both sides of the PN junction. When a forward voltage bias is applied to the first metal layer 1 and the second metal layer 5 of the diode, the mutual suppression of the external electric field and the self-built electric field increases the diffusion current of the carriers, causing a forward current. At this time, the PN junction is equivalent to a resistor with a very small resistance value, and the diode is in a conducting state; when a reverse voltage bias is applied to the first metal layer 1 and the second metal layer 5 of the diode, the external electric field and the self-built electric field are further strengthened, forming a reverse saturation current that is independent of the reverse bias voltage value within a certain reverse voltage range, and the diode is in a cut-off state.

[0036] In the embodiment of the present application, the first metal layer 1 is set as an anode (P-pole) metal layer for forming an anode electrode, and the second metal layer 5 is a cathode (N-pole) metal layer for forming a cathode electrode. The first metal layer 1 and the second metal layer 5 can be made of one or more metals or alloys, such as aluminum, gold, molybdenum or its alloys, etc., depending on the manufacturing process and the performance characteristics required by the diode. The first metal layer 1 and the second metal layer 5 both have good electrical conductivity and chemical stability, and are used for electrical connection with an external circuit. At the same time, by selecting suitable anode metal materials and cathode metal materials, and setting reasonable thicknesses of the anode metal layer and the cathode metal layer, the forward conduction voltage drop and reverse leakage current of the diode can be reduced, and the current density can be increased, thereby improving the output capacity of the diode.

[0037] In the embodiment of the present application, the first metal layer 1 includes a first metal electrode 11 and a second metal electrode 12, the first metal electrode 11 is used to form a first connection terminal of the diode, the first connection terminal is an anode electrode of the diode, and the second metal electrode 12 is connected to at least one resistor 2 to form a second connection terminal of the diode, and the second connection terminal is another anode electrode of the diode. The second metal layer 5 includes a third metal electrode for forming a third connection terminal of the diode. When the circuit is connected, the first metal electrode 11 or the second metal electrode 12 of the first metal layer 1 is electrically connected to the connection terminal of the circuit as an anode electrode, and the third metal electrode of the second metal layer 5 is electrically connected to the other connection terminal of the circuit as a cathode electrode. Among them, in the circuit structure formed by the first metal electrode 11 being electrically connected to the connection terminal of the circuit as an anode electrode, the resistance of the diode is the internal resistance of the diode itself, and in the circuit structure formed by the second metal electrode 12 being electrically connected to the connection terminal of the circuit as an anode electrode, the resistance of the diode is the sum of the internal resistance of the diode itself and the resistance of the resistor 2 connected to the second metal electrode 12, so that the diode can have at least two different resistance gears, which is suitable for circuit structures with at least two resistance ranges, and helps to expand the scope of application of the diode.

[0038] Since the diode includes at least two resistors 2, each second metal electrode 12 is connected to at least one resistor 2. For example, if the diode includes two resistors 2, the second metal electrode 12 is one, and the second metal electrode 12 is connected to two resistors 2, it is equivalent to realizing the parallel connection of the two resistors 2, and finally forming a second connection terminal, so that the diode has two resistance gears, that is, when the first connection terminal formed by the first metal electrode 11 is connected, a resistance gear of the diode is formed, and when the second connection terminal formed by the second metal electrode 12 is connected, another resistance gear of the diode is formed. If the diode includes three resistors 2, the second metal electrode 12 is one, and the second metal electrode 12 is connected to three resistors 2, it is equivalent to realizing the parallel connection of the three resistors 2, and finally still forming a second connection terminal, so that the diode has two resistance gears, that is, when the first connection terminal formed by the first metal electrode 11 is connected, a resistance gear of the diode is formed, and when the second connection terminal formed by the second metal electrode 12 is connected, another resistance gear of the diode is formed. Of course, the number of resistors 2 can also be more, and the connection method of the resistor 2 is similar to the above example, and this embodiment will not be repeated in detail.

[0039] In some optional embodiments, there are at least two second metal electrodes 12, and each second metal electrode 12 is connected to a resistor 2, thereby forming at least two second connection terminals. Exemplarily, if the diode includes two resistors 2 and two second metal electrodes 12, each second metal electrode 12 is connected to a resistor 2, thereby forming two second connection terminals. In this case, the resistance of the two resistors 2 determines the resistance level of the diode. If the resistance of the two resistors 2 is the same, the diode still has two resistance levels, that is, a resistance level of the diode is formed when the first connection terminal formed by the first metal electrode 11 is connected, and another resistance level of the diode is formed when the second connection terminal formed by any second metal electrode 12 is connected. If the resistance of the two resistors 2 is different, the diode will have three resistance levels, that is, a first resistance level is formed when the first connection terminal formed by the first metal electrode 11 is connected, a second resistance level is formed when the second connection terminal formed by one of the second metal electrodes 12 is connected, and a third resistance level is formed when the second connection terminal formed by another second metal electrode 12 is connected.

[0040] If the diode includes three resistors 2 and three second metal electrodes 12, each second metal electrode 12 is connected to a resistor 2, thereby forming three second connection terminals. In this case, the resistance values ​​of the three resistors 2 determine the resistance range of the diode. If the resistance values ​​of the three resistors 2 are the same, the diode still has two resistance ranges; if the resistance values ​​of any two of the three resistors 2 are the same, the diode has three resistance ranges; if the resistance values ​​of the three resistors 2 are different, the diode has four resistance ranges. Of course, the number of resistors 2 can be more, and the connection method of the resistors 2 is similar to the above example, and this embodiment will not be repeated in detail.

[0041] Thus, in the diode provided in the embodiment of the present application, the resistance level of the diode can be adjusted by adjusting the number of resistors 2 connected to each second metal electrode 12 and the resistance selection of two or more resistors 2. If the diode needs to have more resistance levels, each second metal electrode 12 can be set to be connected to a resistor 2 to form a plurality of second connection terminals, and at the same time, the resistance value of each resistor 2 can be set to be different, so that the resistance level formed after each second connection terminal is connected is different, so that the diode can be applicable to circuit structures with more resistance ranges, thereby expanding the scope of application of the diode.

[0042] Of course, in some optional embodiments, the resistance of each resistor 2 in the diode can be set to be different, wherein the resistance range of each resistor 2 can be set according to the actual needs of the diode, which is not limited in this embodiment. The resistance of each resistor 2 is different, which can not only make the diode have more resistance gears, greatly expand the applicable scope of the diode, but also improve the effective utilization rate of the resistor 2, so that each resistor 2 can meet different needs, avoid waste of resources, and rationalize the internal structure of the diode.

[0043] In practical applications, the number of resistors 2 can be processed and set according to actual needs. If the number of resistors 2 is larger, the more resistance levels can be selected when the diode is connected, and the diode can be applied to circuit structures with more resistance ranges and more application scenarios, but correspondingly, the more complex the structure of the diode is, the higher the production and processing cost is, and the longer the production cycle is. If the number of resistors 2 is smaller, the number of resistance levels that can be selected when the diode is connected is relatively small, and the circuit structure that the diode can be applied to is more limited, and the applicable scenarios are more limited, but correspondingly, the simpler the structure of the diode is, the better the reliability and stability of the working process is, the lower the production and processing cost is, and the shorter the production cycle is.

[0044] For example, Figure 1 In the diode shown, there are two first metal electrodes 11, two resistors 2, the two resistors 2 are resistor 2a and resistor 2b respectively, and there are two second metal electrodes 12, which are second metal electrodes 12a and second metal electrodes 12b respectively, wherein the second metal electrode 12a is connected to the resistor 2a, and the second metal electrode 12b is connected to the resistor 2b. When the diode is connected, one connection terminal of the circuit is electrically connected to the third connection terminal on the second metal layer 5, and the other connection terminal of the circuit can be electrically connected to the first connection terminal formed by any first metal electrode 11 to form a resistance level of the diode, and can also be electrically connected to the second connection terminal formed by the second metal electrode 12a to form another resistance level of the diode, and can also be electrically connected to the second connection terminal formed by the second metal electrode 12b to form another resistance level of the diode. In addition, when the diode is packaged, the resistor 2a and the resistor 2b can also be connected in parallel by metal PAD bonding to form another resistance level of the diode.

[0045] Among them, if the resistance values ​​of resistor 2a and resistor 2b are the same, the diode has two resistance ranges; if the resistance values ​​of resistor 2a and resistor 2b are different, the diode has three resistance ranges; if resistor 2a and resistor 2b are connected in parallel, the diode has two resistance ranges. It should be noted that the first connection terminals formed by the two first metal electrodes 11 are connection terminals directly derived from the diode itself, the connection terminal of the circuit is electrically connected to the first connection terminal formed by any of the first metal electrodes 11, and the resistance ranges of the diode are all ranges corresponding to the internal resistance of the diode itself.

[0046] Among them, metal PAD wire bonding is the process of connecting the metal bonding pad (Bond Pad) on the chip to the package substrate or lead frame (Lead Frame) through metal wires (usually gold wires, silver wires or copper alloy wires). This connection method forms a reliable electrical connection between the metal wire and the PAD through physical pressure and heat / ultrasonic energy. Metal PAD wire bonding can achieve reliable electrical connection between the chip and the package substrate or lead frame, and at the same time has high flexibility and adaptability, which can meet the packaging requirements of higher performance, smaller size and lower cost. In the metal PAD wire bonding process, the size, shape and position of the PAD have an important influence on the wire bonding quality. In order to reduce parasitic capacitance and improve performance, the PAD may be designed as an octagon instead of a traditional square or rectangle. The material, diameter and length of the metal wire will also affect the difficulty and reliability of wire bonding. In order to improve the conductivity, ductility and chemical stability after wire bonding, gold wire can be used, but the cost of gold wire is relatively high. If the wire bonding cost needs to be controlled, silver wire or copper alloy wire can also be used. In addition, process parameters such as bonding temperature, output energy and action time during the wire bonding process need to be precisely controlled to ensure the quality and consistency of the wire bonding.

[0047] Figure 3 This is a schematic diagram of the circuit structure of a diode in the embodiment of the present application. Please refer to Figure 3 The circuit structure of the diode includes four connection pins, namely pin A, pin B, pin C and pin D, wherein pin A corresponds to the first connection terminal drawn from the first metal electrode 11, pin B is connected to resistor R1, pin C is connected to resistor R2, pin B and pin C correspond to two second connection terminals drawn from the second metal electrode 12, respectively, and pin D corresponds to the third connection terminal drawn from the third metal electrode of the second metal layer 5. Figure 2 The schematic diagram of the structure of the diode is shown, the resistor R1 is equivalent to the resistor 2a, the pin B is the second connection terminal connected to the resistor 2a and led out from the second metal electrode 12a, the resistor R2 is equivalent to the resistor 2b, and the pin C is the second connection terminal connected to the resistor 2b and led out from the second metal electrode 12b. When it is actually used, the finished product can select the gear of the diode resistance value through the metal PAD wire selection.

[0048] Exemplarily, when the package is wired, it is connected to pin A and pin D respectively, which is equivalent to the selected diode resistance level corresponding to the level of the diode's own internal resistance. When the package is wired, it is connected to pin B and pin D respectively, which is equivalent to the selected diode resistance level corresponding to the level of the sum of the diode's own internal resistance and the resistance of resistor 2a. When the package is wired, it is connected to pin C and pin D respectively, which is equivalent to the selected diode resistance level corresponding to the level of the sum of the diode's own internal resistance and the resistance of resistor 2b. In some embodiments, pins B and C can also be wired on the same second metal electrode through metal PAD bonding to achieve parallel connection of resistors 2a and 2b, thereby obtaining different resistance levels.

[0049] In some optional embodiments, each resistor 2 is a polysilicon resistor. Polysilicon is a silicon material with a morphology between single crystal silicon and amorphous silicon, which is formed by stacking many tiny single crystal silicon particles. The polysilicon resistor is a resistor device formed by a layer of oxide film formed on the silicon surface by semiconductor technology, and then a single crystal silicon layer is gradually grown on the film. The polysilicon resistor has a low temperature coefficient and good stability, can work under different temperatures and environmental conditions, and is not affected by temperature changes and humidity changes. The resistance value of polysilicon is relatively high, which can be applied to diodes that require high resistance values. The polysilicon resistor can effectively resist external electromagnetic interference and ensure the stable operation of the circuit. The polysilicon resistor can also withstand higher voltages and is suitable for high-voltage circuits. At the same time, the polysilicon resistor is small in size and light in weight, which helps to realize the miniaturization and lightweight design of the diode. When selecting a polysilicon resistor, it is necessary to select a suitable resistance value according to the requirements of the circuit to ensure that the power capacity of the selected resistor can meet the power requirements in the circuit.

[0050] In some optional embodiments, Figure 1As shown, two first metal electrodes 11 are distributed in the edge area of ​​the base layer 3, and two second metal electrodes 12 are distributed in the middle area of ​​the base layer 3, and each first metal electrode 11 forms a first connection terminal. Among them, the edge area of ​​the base layer 3 is the area away from the center of the base layer 3, and the middle area of ​​the base layer 3 is the area close to the center of the base layer 3. Usually, the base layer 3 is a rectangular or square structure, and the center of the base layer 3 is the intersection of the diagonals in the rectangular or square structure. Therefore, the edge area of ​​the base layer 3 is the area away from the intersection of the diagonals, and the middle area of ​​the base layer 3 is the area close to the intersection of the diagonals. Of course, if the base layer 3 is a circular structure, the center of the base layer 3 is the position where the center of the circle is located in the circular structure, so that the edge area of ​​the base layer 3 is the area away from the center of the circle, and the middle area of ​​the base layer 3 is the area close to the center of the circle. The area and shape of the edge area and the middle area are not limited in this embodiment. Distributing the two first metal electrodes 11 at the edge region of the base layer 3 and the two second metal electrodes 12 at the middle region of the base layer 3 is more conducive to the processing design of the resistor 2 on the base layer 2 and reduces the processing difficulty of the diode.

[0051] In addition, it should be noted that the diode in the embodiment of the present application is mainly a bootstrap diode. The bootstrap diode is based on the overwhelming effect of the PN junction and the positive feedback effect of the diode. When the diode is in a specific working state, it can utilize the characteristics of the PN junction to generate stable current and voltage through the internal positive feedback mechanism without external power excitation. Bootstrap diodes can be widely used in oscillation circuits, detection circuits, amplifier circuits, and voltage stabilization circuits. For example, in an oscillation circuit, a bootstrap diode can constitute a self-excited oscillation circuit to generate a stable high-frequency waveform for use in signal generators and other equipment; in a detection circuit, a bootstrap diode is used to detect useful signals from modulated waves to achieve signal demodulation; in an amplifier circuit, a bootstrap diode can be used as part of an amplifier to enhance the amplitude of the signal through its internal positive feedback mechanism; in a voltage stabilization circuit, a bootstrap diode can help maintain the stability of the output voltage and prevent voltage fluctuations from affecting circuit performance.

[0052] After the process conditions of the diode in the embodiment of the present application are finalized, verification of different specifications is required. The diode can be suitable for different resistance levels, match more circuit structures in actual applications, and be suitable for more application scenarios, which helps to save the cost of redevelopment and verification and shorten the time period.

[0053] Please continue to refer to Figure 1 and Figure 2 In some optional embodiments, the diode further includes an oxide layer 4 , the first metal layer 1 is disposed on the oxide layer 4 , and the oxide layer 4 is used to achieve electrical isolation between the first metal layer 1 and the substrate layer 3 .

[0054] Specifically, the oxide layer 4 can be used as a barrier layer between the first metal layer 1 and the base layer 3 to prevent the impurity source from unnecessary diffusion to the P-type semiconductor doping region 31 and the N-type semiconductor doping region 32 inside the base layer 3 in the subsequent process steps, thereby improving the electrical performance of the diode. At the same time, the oxide layer 4 also has a certain protective effect, which can prevent the external environment from corroding the inside of the diode and help protect the surface of the diode from pollution and damage. In addition, in the diode, there are often edge effects at the contact between the first metal layer 1 and the P-type semiconductor doping region 31 or the N-type semiconductor doping region 32, such as current concentration, electric field distortion, etc., which lead to problems such as increased contact resistance and uneven current distribution. The introduction of the oxide layer 4 can alleviate these edge effects to a certain extent and improve the performance of the diode.

[0055] In some embodiments, the oxide layer 4 may be a silicon dioxide oxide layer. The silicon dioxide oxide layer is usually formed on the surface of the base layer 3 by a thermal oxidation process. The silicon dioxide oxide layer has good insulation properties and can effectively prevent direct contact between the first metal layer 1 and the base layer 3, thereby ensuring that no electrical breakdown or leakage occurs between the first metal layer 1 and the P-type semiconductor doping region 31 or the N-type semiconductor doping region 32, thereby ensuring the normal operation of the diode, and at the same time effectively protecting the P-type semiconductor doping region 31 or the N-type semiconductor doping region 32 from erosion by the external environment.

[0056] In addition, in structures such as Schottky barrier diodes, the bottom layer of the oxide layer 4 usually has an epitaxial layer. The epitaxial layer is a thin film layer prepared by epitaxial growth technology from semiconductor materials, and has the same crystal structure and lattice constant as the substrate material. The epitaxial layer, as the active region of the semiconductor device, is a key part in achieving the electrical performance of the diode. In some special diode structures, the bottom layer of the oxide layer 4 may also include other material layers, such as a buffer layer, a transition layer, etc. The function of these material layers is to improve the lattice matching between the epitaxial layer and the substrate, reduce the interface resistance, and improve the device performance.

[0057] Furthermore, the thickness of the oxide layer 4 is also one of the important parameters that affect the performance of the diode. Although a thicker oxide layer 4 can provide better insulation protection and reduce the impact of edge effects, it will also increase parasitic capacitance and reduce the operating frequency of the diode. Therefore, when selecting the thickness of the oxide layer 4, it is necessary to comprehensively consider the performance requirements and process conditions of the diode. Normally, the thickness of the oxide layer 4 can be determined to be about 0.5μm.

[0058] Please continue to refer to Figure 1 and Figure 2In some optional embodiments, a first through hole 41 is provided on the oxide layer 4 , and the first through hole 41 penetrates the oxide layer 4 along the thickness direction of the oxide layer 4 , and the first metal electrode 11 is connected to the base layer 3 through the first through hole 41 .

[0059] Specifically, the thickness direction of the oxide layer 4 is as follows Figure 1 As shown in the Z direction in FIG. 4 , the first through hole 41 penetrates the oxide layer 4 along the Z direction, at least a portion of the first metal electrode 11 is filled in the first through hole 41, and penetrates the first through hole 41 to connect with the base layer 3, and the first through hole 41 can be a circular hole, a rectangular hole, a polygonal hole or any other shape structure, which is not limited in this embodiment. More specifically, the base layer 3 includes a P-type semiconductor doping region 31 and an N-type semiconductor doping region 32, the N-type semiconductor doping region 32 covers the P-type semiconductor doping region 31, and one or more first metal electrodes 11 are connected to the P-type semiconductor doping region 31 through the first through hole 41. It should be noted that the contact quality between the first metal electrode 11 and the P-type semiconductor doping region 31 and the stability of the first metal electrode 11 need to be ensured to reduce the reverse leakage current of the diode and improve the reliability of the diode.

[0060] In addition, a substrate layer 33 is provided on the side of the N-type semiconductor doping region 32 away from the P-type semiconductor doping region 31. The substrate layer 33 is a base layer for fixing the P-type semiconductor doping region 31 and the N-type semiconductor doping region 32. The preparation of the substrate layer 33 usually adopts epitaxial growth technology, such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), etc. These technologies can accurately control the growth rate and composition of the material on the substrate, so as to prepare high-quality semiconductor films. The substrate layer 33 in the diode not only carries the foundation of the entire semiconductor device, but also realizes the electrical, optical and thermal properties of the diode through interaction with other functional layers. Therefore, when preparing the diode, it is necessary to select suitable substrate materials and technologies to ensure the high performance and reliability of the diode.

[0061] Furthermore, the materials used for the substrate layer 33 may be different for different types of diodes. In some light-emitting diodes, the materials commonly used for the substrate layer 33 include aluminum oxide, silicon carbide, silicon, etc. The substrate layer 33 has excellent physical and chemical properties and can meet the growth and fixation requirements of the diode chip. In some Schottky barrier diodes, the substrate layer 33 is usually implemented with a high-conductivity N+ type material. The N+ type substrate has a high electron concentration and mobility, which enables the diode to quickly conduct current when forward biased. At the same time, the N+ type substrate can also effectively prevent impurities that drift to the epitaxial layer during the diode manufacturing process from affecting the characteristics of the substrate and reducing the cascade resistance of the diode.

[0062] Please continue to refer to Figure 1 and Figure 2In some optional embodiments, the thickness of the oxide layer 4 is greater than the thickness of the resistor 2. The oxide layer 4 covers at least two resistors 2, which can achieve electrical isolation between the resistor 2 and the first metal layer 2. At the same time, it can protect the resistor 2 to a certain extent, preventing the resistor 2 from being corroded by the external environment during operation, and helping to protect the surface of the resistor 2 from pollution and damage, thereby helping to improve the reliability of the second metal electrode 12 forming the second connection terminal. At the same time, a second through hole 42 is also provided on the oxide layer 4, and the second through hole 42 penetrates the oxide layer 4 along the thickness direction of the oxide layer 4. At least part of the second metal electrode 12 is filled in the second through hole 42, and penetrates the second through hole 42 to connect with the resistor 2. The second through hole 42 can be a circular hole, a rectangular hole, a polygonal hole, or any other shape structure, which is not limited in this embodiment.

[0063] Furthermore, since the distance between the first metal electrode 11 and the P-type semiconductor doping region 31 is relatively large, and the distance between the second metal electrode 12 and the resistor 2 is relatively small, that is, the axial size of the first through hole 41 to be formed on the oxide layer 4 is larger than the axial size of the second through hole 42, in order to ensure that the first metal electrode 11 can be fully filled in the first through hole 41 and connected to the base layer 3, and the second metal electrode 12 can be fully filled in the second through hole 42 and connected to the resistor 2, the opening size of the first through hole 41 can be set to be larger than the axial size of the second through hole 42. 2, the opening size of the first through hole 41 refers to the maximum size of the first through hole 41 along the direction parallel to the oxide layer 4, the opening size of the second through hole 42 refers to the maximum size of the second through hole 42 along the direction parallel to the oxide layer 4, the opening size of the first through hole 41 is larger than the opening size of the second through hole 42, so that the cavity volume formed by the first through hole 41 is larger than the cavity volume formed by the second through hole 42, thereby reserving sufficient filling space for the first metal electrode 11, ensuring reliable connection between the first metal electrode 11 and the P-type semiconductor doping region 31.

[0064] Please continue to refer to Figure 1 and Figure 2 In some optional embodiments, the first metal electrode 11 and the second metal electrode 12 are spaced apart to avoid electrical contact between the first metal electrode 11 and the second metal electrode 12, causing the two electrodes to merge into one electrode, thereby reducing the selectable resistance range of the diode. Of course, adjacent first metal electrodes 11 and adjacent second metal electrodes 12 may also be spaced apart to avoid electrical contact between each other, thereby reducing the selectable resistance range of the diode. The distance range of the spacing is determined according to the number of the first metal electrodes 11 and the second metal electrodes 12 and the size of the diode, and is not limited in this embodiment.

[0065] The manufacturing process of the diode in the embodiment of the present application generally includes multiple links such as chip preparation, packaging preparation, and performance testing. In the chip preparation link, semiconductor materials can be deposited by chemical vapor deposition (CVD), physical vapor deposition (PVD), liquid phase epitaxy (LPE), low pressure chemical vapor deposition (LPCVD) and other methods to generate P-type semiconductor doping regions 31 and N-type semiconductor doping regions 32. Then, a PN junction is formed between the P-type semiconductor doping region 31 and the N-type semiconductor doping region 32 by diffusion or ion implantation and other processes. This is the key to the unidirectional conductivity of the diode. Then, charged particles such as ions and electrons and plasma with highly chemically active neutral atoms and free radicals are used to remove the thin film to form at least two resistors 2. Then, the silicon dioxide is oxidized to form a PN junction. The layer 4 is deposited, and after the deposition is completed, hole etching is performed at the corresponding position, that is, the thin film not covered by the etching glue is removed by the chemical reaction of the thin film and the specific solution, thereby forming a first through hole 41 and a second through hole 42; then a platinum diffusion process is performed, and at this time, the position where the P-type semiconductor doping area 31 is opened can be subjected to a platinum diffusion process, thereby improving the reverse recovery characteristics of the diode; then, metal deposition is performed on the surface of the substrate layer 3 to form a first metal layer 1, and after the deposition is completed, the front metal is etched to form a first metal electrode 11 and a second metal electrode 12 on the silicon dioxide oxide layer 4, wherein the first metal electrode 11 and the second metal electrode 12 are arranged at intervals and are not connected to each other; then a back process is performed to form a second metal layer 5 on the side of the substrate layer 3 away from the first metal layer 1, thereby completing the device manufacturing.

[0066] After the chip is prepared, it enters the packaging preparation stage, which is the process of assembling the chip and other components (such as pins, packaging materials, etc.) into a finished product with electrical properties. The main steps of packaging preparation include the solid crystal process, wire bonding or bonding process, plastic encapsulation curing, electroplating process, rib cutting and forming, etc. Among them, in the solid crystal process, the chip is fixed on the packaging substrate to ensure good contact and positioning between the chip and the substrate; in the wire bonding or bonding process, the electrodes on the chip are connected to the pins on the packaging substrate using metal wires (such as aluminum wires) to form an electrical path; in the plastic encapsulation curing process, plastic or other packaging materials are used to encapsulate the chip and wire bonding to protect the chip from the external environment and ensure the mechanical strength and electrical performance of the device; in the electroplating process, the surface of the package is electroplated to improve its corrosion resistance, conductivity and aesthetics; in the rib cutting and forming process, the package is cut and formed to form a device shape and size that meets the requirements.

[0067] After the packaging preparation stage, the performance testing stage begins. This stage mainly conducts electrical performance testing, reliability testing and appearance inspection on the diode to ensure that the performance and quality of the diode meet the standards. After passing the test, the diode is graded to meet the needs of different application scenarios. Among them, the diode can be graded according to the resistance range of the diode.

[0068] An embodiment of the present application also provides a power module, comprising the diode described in any one of the aforementioned embodiments.

[0069] Specifically, the power module integrates one or more diodes and other power semiconductor devices (such as field effect tubes, thyristors, etc.) in a packaged device, including but not limited to rectifier bridge modules, inverter modules, circuit protection modules, etc. The diode can play a rectifying role in the power module, that is, converting AC power into DC power to drive the power module to work normally. It can also play a voltage stabilization role. The diode can maintain a stable voltage output at a specific reverse breakdown voltage, thereby maintaining the stability of the power module. It can also play a role in protecting the circuit. The diode can prevent the reverse current from entering the sensitive part of the power module. For example, in a switching power supply, the diode can prevent the reverse current from damaging the power switch or circuit. It can also play a transient voltage suppression role, which is used to absorb voltage spikes and protect the power module from the impact of instantaneous high voltage. It can also play a switch control role, which is used to control the direction of the current, realize the switching of the current, and reduce power consumption loss. It can also play a filtering role, helping to reduce the noise in the power supply or signal, thereby improving the stability and reliability of the system. As a result, the power module has excellent performance and can be applied to higher power and higher efficiency application scenarios.

[0070] In some embodiments, the power module may be an IPM (Intelligent Power Module), which is a highly integrated solid-state power switch. It combines the advantages of the power switch device IGBT (Insulate-Gate Bipolar Transistor—IGBT), such as high current density, low saturation voltage and high voltage resistance, and the advantages of the high input impedance, high switching frequency and low driving power of the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The IPM integrates the drive circuit, protection circuit, detection circuit, etc. These circuits work together to achieve precise control, real-time monitoring and rapid protection of power semiconductor devices. When the IPM receives a control signal, the drive circuit controls the switching state of the power semiconductor device according to the requirements of the signal. At the same time, the sensor inside the IPM monitors the working environment in real time. Once an abnormality is detected, the protection circuit will immediately intervene, cut off the power supply or adjust the working state to protect the module and the entire system from damage.

[0071] The embodiment of the present application also provides an electronic device, including the aforementioned power module. The electronic device may be a household appliance, such as an air conditioner, a refrigerator, an electric fan, etc. The power module may maintain the normal operation of the household appliance and provide protection for the safety of the operation.

[0072] In the specification provided by the application, a large number of specific details are described. However, it is understood that the embodiments of the application can be practiced without these specific details. In some instances, known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this specification.

[0073] In the claims, any reference signs placed between brackets shall not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present application may be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In a unit claim enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third etc. does not indicate any order. These words may be interpreted as names.

[0074] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0075] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A diode, characterized in that: It comprises a base layer (3), a first metal layer (1) and at least two resistors (2) arranged on the base layer (3); The first metal layer (1) comprises a first metal electrode (11) and a second metal electrode (12); The first metal electrode (11) is used to form a first connecting terminal of the diode; The second metal electrode (12) is connected to at least one of the resistors (2) to form a second connection terminal of the diode.

2. The diode according to claim 1, characterized in that There are at least two second metal electrodes (12), and each second metal electrode (12) is connected to one resistor (2) to form at least two second connection terminals.

3. The diode according to claim 1, characterized in that The resistance value of each resistor (2) is different.

4. The diode according to claim 1, characterized in that Each of the resistors (2) is a polysilicon resistor (2).

5. The diode according to claim 1, characterized in that The first metal electrode (11) is arranged in an edge region of the base layer (3), and the second metal electrode (12) is arranged in a middle region of the base layer (3).

6. The diode according to claim 1, characterized in that It also includes an oxide layer (4) disposed on the base layer (3); The first metal layer (1) is arranged on the oxide layer (4), and the oxide layer (4) is used to achieve electrical isolation between the first metal layer (1) and the base layer (3).

7. The diode according to claim 6, characterized in that The oxide layer (4) is provided with a first through hole (41), the first through hole (41) penetrates the oxide layer (4) along the thickness direction of the oxide layer (4), and the first metal electrode (11) is connected to the base layer (3) through the first through hole (41).

8. The diode according to claim 7, characterized in that The oxide layer (4) covers at least two of the resistors (2); a second through hole (42) is also provided on the oxide layer (4); the second through hole (42) penetrates the oxide layer (4) along the thickness direction of the oxide layer (4); and the second metal electrode (12) is connected to the resistor (2) via the second through hole (42).

9. The diode according to claim 8, characterized in that The opening size of the first through hole (41) is larger than the opening size of the second through hole (42).

10. The diode according to claim 1, characterized in that It also comprises a second metal layer (5) arranged on the base layer (3), the second metal layer (5) being connected to a side of the base layer (3) facing away from the first metal layer (1), and the second metal layer (5) being used to form a third connection terminal of the diode.

11. The diode according to claim 1, characterized in that The first metal electrode (11) and the second metal electrode (12) are arranged at an interval.

12. A power module, comprising the diode according to any one of claims 1 to 11.

13. An electronic device comprising the power module according to claim 12.

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