Array substrate and preparation method thereof, display panel and display device

Abstract

The invention discloses an array substrate and a preparation method thereof, a display panel and a display device. The preparation method of the array substrate comprises the following steps: providing a substrate; preparing a driving circuit layer on one side of the substrate; the driving circuit layer comprises a plurality of driving circuit arrangement areas and a plurality of edge areas, and the driving circuit arrangement areas and the edge areas are not overlapped in the thickness direction of the substrate; a pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by adopting a shift exposure process, the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area; a photoresist layer is prepared on the side, away from the substrate, of the driving circuit layer, and the photoresist layer and the edge metal structure are not overlapped in the thickness direction of the substrate; etching the edge metal structure by using the photoresist layer as a mask; and stripping the photoresist layer to form the array substrate. The edge metal structure is removed by means of the photoresist layer, the process difficulty is reduced, and the structural stability is ensured.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an array substrate and a preparation method thereof, a display panel, and a display device. Background Art

[0002] With the continuous development of display technology, display panels have been widely used in people's production and life. In order to better meet people's needs, the display panel can be adjusted, for example, the preparation process of the display panel can be adjusted to improve the overall effect of the display panel. Summary of the invention

[0003] The present invention provides an array substrate and a preparation method thereof, a display panel, and a display device, so as to reduce the difficulty of array substrate manufacturing process and improve structural stability.

[0004] In a first aspect, the present invention provides a method for preparing an array substrate, comprising:

[0005] providing a substrate;

[0006] A driving circuit layer is prepared on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas do not overlap with the edge areas;

[0007] A pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using a shift exposure process, wherein the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area;

[0008] A photoresist layer is prepared on a side of the driving circuit layer away from the substrate, and along a thickness direction of the substrate, the photoresist layer does not overlap with the edge metal structure;

[0009] Using the photoresist layer as a mask, etching the edge metal structure;

[0010] The photoresist layer is peeled off to form an array substrate.

[0011] In a second aspect, the present invention provides an array substrate, which is prepared by the method for preparing an array substrate described in any one of the first aspects.

[0012] In a third aspect, the present invention provides a display panel, wherein the display panel comprises the array substrate described in the second aspect;

[0013] The display panel further includes a light emitting element, and the light emitting element is electrically connected to a driving circuit in the array substrate.

[0014] In a fourth aspect, the present invention provides a display device, comprising the display panel described in any one of the third aspects.

[0015] The technical solution of the embodiment of the present invention provides a method for preparing an array substrate, including: providing a substrate; preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes multiple driving circuit setting areas and multiple edge areas, and the driving circuit setting areas and the edge areas do not overlap along the thickness direction of the substrate; using a shift exposure process in the driving circuit layer to form a pixel driving circuit structure and an edge metal structure, the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area; preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and the photoresist layer and the edge metal structure do not overlap along the thickness direction of the substrate; using the photoresist layer as a mask to etch the edge metal structure; peeling off the photoresist layer to form an array substrate. The edge metal structure is removed with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing process difficulty, and ensuring structural stability.

[0016] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 A flow chart of a method for preparing an array substrate provided in an embodiment of the present invention;

[0019] Figure 2 A partial flow chart of a method for preparing an array substrate provided by an embodiment of the present invention;

[0020] Figure 3 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0021] Figure 4 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0022] Figure 5 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0023] Figure 6A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0024] Figure 7 A partial flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0025] Figure 8 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0026] Fig. 9 A partial structural schematic diagram of an array substrate provided by an embodiment of the present invention;

[0027] Fig.10 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention;

[0028] Fig.11 A schematic diagram of the structure of a display device provided by an embodiment of the present invention;

[0029] Fig.12 A schematic structural diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 1 A flow chart of a method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 1 As shown, the method for preparing the array substrate includes:

[0033] S101, providing a substrate.

[0034] The substrate may be a rigid substrate such as glass, quartz, or a flexible substrate such as polyimide.

[0035] S102, preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas and the edge areas do not overlap.

[0036] Among them, a driving circuit layer is prepared on one side of the substrate. The driving circuit layer is composed of multiple film layers. The driving circuit layer includes a metal film layer, a semiconductor layer and an inorganic insulating layer. The metal film layer is used to form a gate, a scan line, a light-emitting control signal line, an initialization signal line, a source, a drain, a data line and a power signal line, etc. The semiconductor layer is used to form an active layer; the inorganic insulating layer may include a buffer layer, a gate insulating layer, an interlayer insulating layer, an interlayer dielectric layer and a passivation layer. A driving circuit setting area can form a corresponding display panel. A whole layer of driving circuit layer is prepared on the same substrate, and the driving circuit layer is divided into multiple driving circuit setting areas and multiple edge areas, so as to facilitate the formation of multiple display panels using the same preparation process and the same material layer, thereby reducing the difficulty and time of preparation.

[0037] S103, forming a pixel driving circuit structure and an edge metal structure in the driving circuit layer by using a shift exposure process, wherein the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area.

[0038] in, Figure 2 A partial flow chart of a method for preparing an array substrate provided by an embodiment of the present invention, such as Figure 2 As shown, part of the metal layer in the driving circuit layer is formed by a shift exposure process, and the same mask structure 110 is used to pattern different metal film layers. The mask structure 110 first patterns one metal film layer, and then patterns another metal film layer after shifting, thereby saving the number of mask structures, reducing process steps and production costs. However, during the preparation process, the patterned hollow area on the mask structure 110 overlaps with the driving circuit setting area 111, which is convenient for patterning the metal film layer and forming a pixel driving circuit structure in the driving circuit setting area 111. However, part of the metal film layer is located in the edge area 112, and the edge area 112 is blocked by the mask structure 110 and will not be etched. The edge metal structure 1121 remains in the edge area 112. The existence of the edge metal structure 1121 seriously affects the subsequent process and easily causes the risk of subsequent metal film layer peeling and machine downtime.

[0039] S104, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer and the edge metal structure do not overlap.

[0040] The area where the pixel driving circuit structure is formed in the driving circuit setting area is normally coated with a photoresist layer, and the edge metal structure is not coated with a photoresist layer, so as to facilitate the subsequent removal of the edge metal structure.

[0041] S105, using the photoresist layer as a mask, etching the edge metal structure.

[0042] The photoresist layer is distributed in a patterned manner, and along the thickness direction of the substrate, the photoresist layer does not overlap with the edge metal structure. The photoresist layer is used as a mask to only etch the edge metal structure to remove the edge metal structure.

[0043] S106, peeling off the photoresist layer to form an array substrate.

[0044] After the edge metal structure is etched, the photoresist layer is removed and subsequent film layers are prepared to form an array substrate.

[0045] The embodiment of the present invention forms a pixel driving circuit structure and an edge metal structure by adopting a shift exposure process in a driving circuit layer; a photoresist layer is prepared on a side of the driving circuit layer away from a substrate, and the photoresist layer and the edge metal structure do not overlap along the thickness direction of the substrate; the edge metal structure is etched using the photoresist layer as a mask, and the edge metal structure is removed with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing process difficulty, and ensuring structural stability.

[0046] Optionally, the driving circuit layer includes at least a first metal layer, a second metal layer and a third metal layer; Figure 3 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 3 As shown, the method for preparing the array substrate includes:

[0047] S201, providing a substrate.

[0048] S202, preparing a first metal layer on one side of the substrate.

[0049] The first metal layer can be a metal single substance of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, or molybdenum-nickel alloy, or a combination of any of the above metals or alloys. The first metal layer can form the gate, scan line, and light control signal line of the thin film transistor.

[0050] S203, preparing a second metal layer on a side of the first metal layer away from the substrate.

[0051] The second metal layer may be a metal single substance of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, or molybdenum-nickel alloy, or a combination of any of the above metals or alloys, or may be tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, aluminum indium tin zinc oxide, or a combination of any of the above metals or alloys. The second metal layer may form a source, a drain, an initialization signal line, etc.

[0052] S204, preparing a third metal layer on the side of the second metal layer away from the substrate, wherein the first metal layer, the second metal layer and the third metal layer each include a plurality of drive circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the drive circuit setting areas do not overlap with the edge areas.

[0053] The third metal layer may be tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, aluminum indium tin zinc oxide, or a combination of any of the above metals or alloys. The third metal layer may form a data line and a power signal line, etc.

[0054] S205, forming a pixel driving circuit structure and an edge metal structure in the first metal layer, the second metal layer and the third metal layer by using a shift exposure process, wherein the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area.

[0055] The first metal layer and the second metal layer can be patterned using the same mask structure, and the mask structure includes a first hollow area corresponding to the first metal layer and a second hollow area corresponding to the second metal layer, respectively. The pattern in the first hollow area corresponds to the target pattern of the first metal layer, and the pattern in the second hollow area corresponds to the target pattern of the second metal layer. The first metal layer is patterned using the first hollow area in the mask structure, and the mask structure is shifted so that the second metal layer is patterned using the second hollow area in the mask structure. When the mask structure is patterning the first metal layer, part of the third metal layer located in the edge area is blocked by the mask structure. After the mask structure is shifted, the third metal layer located in the edge area is exposed to form a residual edge metal structure.

[0056] S206, preparing a photoresist layer on a side of the third metal layer away from the substrate, wherein the photoresist layer does not overlap with the edge metal structure along the thickness direction of the substrate.

[0057] S207, using the photoresist layer as a mask, etching the edge metal structure.

[0058] S208, stripping the photoresist layer to form an array substrate.

[0059] The embodiment of the present invention prepares a first metal layer, a second metal layer and a third metal layer by stacking on one side of a substrate, and adopts a shift exposure process in the first metal layer, the second metal layer and the third metal layer to form a pixel driving circuit structure and an edge metal structure; prepares a photoresist layer on the side of the third metal layer away from the substrate, and the photoresist layer and the edge metal structure do not overlap along the thickness direction of the substrate; uses the photoresist layer as a mask to etch the edge metal structure, and removes the edge metal structure with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing process difficulty, and ensuring structural stability.

[0060] Optionally, the pixel driving circuit structure is formed on the first metal layer, the second metal layer and the third metal layer respectively; the edge metal structure is formed on the third metal layer. The first metal layer can form the gate electrode, the scan line and the light-emitting control signal line of the thin film transistor. The second metal layer can form the source electrode, the drain electrode, the initialization signal line and the like. The third metal layer can form the data line and the power signal line and the like. The first metal layer and the second metal layer are patterned using the same mask structure, and the third metal layer can be patterned using one mask structure. Compared with the first metal layer, the second metal layer and the third metal layer being patterned using three mask structures respectively, the mask structure is saved, and the process steps and production costs are reduced. When the first metal layer is patterned, part of the third metal layer located in the edge area is blocked by the mask structure, and when the second metal layer is patterned, a residual edge metal structure is formed on the third metal layer.

[0061] Optional, Figure 4 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 4 As shown, the method for preparing the array substrate includes:

[0062] S301, substrate provided.

[0063] S302, preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas and the edge areas do not overlap.

[0064] S303, providing a mask structure, wherein the mask structure includes a plurality of hollow regions, wherein along the thickness direction of the substrate, the hollow regions at least partially overlap with the driving circuit setting region.

[0065] Among them, the mask structure is a mask plate, and multiple hollow areas are set in the mask structure. The hollow areas correspond to the driving circuit setting area, which is convenient for using the mask structure to pattern the first metal layer and the second metal layer of the driving circuit setting area.

[0066] S304, using a mask structure to form a pixel driving circuit structure and an edge metal structure in the driving circuit layer by a shift exposure process, wherein the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area.

[0067] S305, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer and the edge metal structure do not overlap.

[0068] S306, using the photoresist layer as a mask, etching the edge metal structure.

[0069] S307, peeling off the photoresist layer to form an array substrate.

[0070] The embodiment of the present invention provides a mask structure, which includes a plurality of hollow areas, wherein the hollow areas at least partially overlap with the driving circuit setting area along the thickness direction of the substrate; a pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using the mask structure and adopting a shift exposure process; the edge metal structure is etched using a photoresist layer as a mask, and the edge metal structure is removed with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing the process difficulty, and ensuring structural stability.

[0071] Optionally, the hollow area includes at least a first hollow area and a second hollow area that are spaced apart, and the first hollow area and the second hollow area have different hollow shapes. Exemplarily, the first hollow area corresponds to a target pattern to be formed in the first metal layer, the mask structure uses the first hollow area to pattern the first metal layer, and the mask structure is moved so that the second hollow area corresponds to the target pattern to be formed in the second metal layer to pattern the second metal layer. Since the target pattern to be formed in the first metal layer is different from the target pattern to be formed in the second metal layer, the mask structure has a first hollow area and a second hollow area with different hollow shapes to ensure the preparation effect of the pixel driving circuit structure.

[0072] Optionally, the driving circuit setting area includes at least a first sub-driving circuit setting area and a second sub-driving circuit setting area, the pixel driving circuit structure includes a first pixel driving circuit structure and a second pixel driving circuit structure, the first pixel driving circuit structure is located in the first sub-driving circuit setting area, and the second pixel driving circuit structure is located in the second sub-driving circuit setting area. Figure 5 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 5 As shown, the method for preparing the array substrate includes:

[0073] S401, providing a substrate.

[0074] S402, preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas and the edge areas do not overlap.

[0075] S403, providing a mask structure, wherein the mask structure includes a plurality of hollow regions, wherein along the thickness direction of the substrate, the hollow regions at least partially overlap with the driving circuit setting region.

[0076] S404 , forming a first pixel driving circuit structure in a first sub-driving circuit setting area by using a first hollowed-out area in the mask structure.

[0077] Among them, the first pixel driving structure can be formed in the first metal layer, the first hollow area in the mask structure corresponds to the first sub-driving circuit setting area, the first metal layer is patterned using the first hollow area in the mask structure, and the first pixel driving circuit structure located in the first metal layer is formed in the first sub-driving circuit setting area.

[0078] S405, moving the mask structure by a preset distance along a first direction to expose the edge metal structure; wherein the first direction is the direction from the first drive circuit setting area to the second sub-drive circuit setting area, and the edge metal structure is located in the second sub-drive circuit setting area away from the first sub-drive circuit setting area.

[0079] The first metal layer and the second metal layer are patterned using the same mask structure, the first hollow area in the mask structure does not overlap with the second hollow area, and before the second metal layer is patterned using the second hollow area, the mask structure needs to be moved so that the second hollow area of ​​the mask structure corresponds to the second sub-driving circuit setting area, thereby ensuring accurate patterning of the second metal layer. When the first metal layer is patterned again, part of the third metal layer located in the edge area is blocked by the mask structure, and after the mask structure moves a preset distance along the first direction, the third metal layer that is not etched in the edge area is exposed, forming a residual edge metal structure.

[0080] S406, forming a second pixel driving circuit structure in the second sub-driving circuit setting area by using the second hollowed-out area in the mask structure.

[0081] Among them, the second pixel driving structure can be formed in the second metal layer. After the mask structure is moved, the second hollow area in the mask structure corresponds to the second sub-driving circuit setting area. The second metal layer is patterned using the second hollow area in the mask structure to form a second pixel driving circuit structure located in the second metal layer in the second sub-driving circuit setting area.

[0082] S407, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and the photoresist layer does not overlap with the edge metal structure along the thickness direction of the substrate.

[0083] S408, using the photoresist layer as a mask, etching the edge metal structure.

[0084] S409, stripping the photoresist layer to form an array substrate.

[0085] The embodiment of the present invention forms a first pixel driving circuit structure in a first sub-driving circuit setting area by using a first hollow area in a mask structure; moves the mask structure along a first direction by a preset distance and exposes an edge metal structure; forms a second pixel driving circuit structure in a second sub-driving circuit setting area by using a second hollow area in the mask structure; etches the edge metal structure by using a photoresist layer as a mask, and removes the edge metal structure with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing process difficulty, and ensuring structural stability.

[0086] Optional, Figure 6 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 6 As shown, the method for preparing the array substrate includes:

[0087] S501, providing a substrate.

[0088] S502, preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas and the edge areas do not overlap.

[0089] S503, providing a mask structure, wherein the mask structure includes a plurality of hollow regions, wherein along the thickness direction of the substrate, the hollow regions at least partially overlap with the driving circuit setting region.

[0090] S504 , forming a first pixel driving circuit structure in a first sub-driving circuit setting area by using a first hollowed-out area in the mask structure.

[0091] S505, moving the mask structure by a preset distance along a first direction to expose the edge metal structure; wherein the first direction is the direction from the first drive circuit setting area to the second sub-drive circuit setting area, and the edge metal structure is located in the second sub-drive circuit setting area away from the first sub-drive circuit setting area.

[0092] S506, aligning the mask structure with the second sub-driving circuit arrangement area.

[0093] in, Figure 7 A partial flow chart of another method for preparing an array substrate provided by an embodiment of the present invention, such as Figure 7As shown, after the first pixel driving circuit structure is formed in the first sub-driving circuit setting area 11 using the mask structure 110, the mask structure 110 is moved along the first direction X, and the mask structure 110 needs to be aligned with the second sub-driving circuit setting area 12 to ensure the preparation accuracy of the second pixel driving circuit structure. The mask structure and the second sub-driving circuit setting area 12 can be provided with a plurality of alignment points 13 to ensure the alignment accuracy of the two.

[0094] S507 , forming a second pixel driving circuit structure in the second sub-driving circuit setting area by using the second hollowed-out area in the mask structure.

[0095] S508, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer and the edge metal structure do not overlap.

[0096] S509, using the photoresist layer as a mask, etching the edge metal structure.

[0097] S510, stripping the photoresist layer to form an array substrate.

[0098] The embodiment of the present invention forms a first pixel driving circuit structure in a first sub-driving circuit setting area by using a first hollow area in a mask structure; moves the mask structure by a preset distance along a first direction and exposes an edge metal structure; aligns the mask structure with the second sub-driving circuit setting area; forms a second pixel driving circuit structure in the second sub-driving circuit setting area by using a second hollow area in the mask structure; etches the edge metal structure by using a photoresist layer as a mask, and removes the edge metal structure with the help of the photoresist layer, thereby avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing process difficulty, and ensuring structural stability.

[0099] Optional, reference Figure 7 Due to process limitations, the first sub-driving circuit setting area 11 and the edge area 112 further include a spacer area 14. Along the thickness direction of the substrate, the photoresist layer overlaps the spacer area 14. The photoresist layer is coated on the spacer area 14 to prevent the spacer area 14 from being etched, and only the edge metal structure 1121 located in the edge area 112 is etched and removed.

[0100] Optional, reference Figure 7 , along the first direction X, the width of the spacer 14 is W, where 1mm≤W≤10mm. The width of the spacer 14 is reasonably adjusted so that the remaining edge metal structure 1121 in the spacer 14 does not affect the subsequent process, thereby ensuring the structural stability of the array substrate.

[0101] Optional, Figure 8 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Figure 8As shown, the method for preparing the array substrate includes:

[0102] S601, providing a substrate.

[0103] S602, preparing a driving circuit layer on one side of the substrate; the driving circuit layer includes a plurality of driving circuit setting areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit setting areas and the edge areas do not overlap.

[0104] S603, providing a mask structure, wherein the mask structure includes a plurality of hollow regions, wherein along the thickness direction of the substrate, the hollow regions at least partially overlap with the driving circuit setting region.

[0105] S604 , forming a first pixel driving circuit structure in a first sub-driving circuit setting area by using a first hollowed-out area in the mask structure.

[0106] S605, moving the mask structure by a preset distance along a first direction to expose the edge metal structure; wherein the first direction is the direction from the first driving circuit setting area to the second sub-driving circuit setting area, and the edge metal structure is located in the second sub-driving circuit setting area away from the first sub-driving circuit setting area.

[0107] S606, aligning the mask structure with the second sub-driving circuit arrangement area.

[0108] S607 , forming a second pixel driving circuit structure in the second sub-driving circuit setting area by using the second hollowed-out area in the mask structure.

[0109] S608, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer and the edge metal structure do not overlap.

[0110] S609, using the photoresist layer as a mask, removing the edge metal structure by wet etching.

[0111] The photoresist layer is used as a mask, and the edge metal structure not covered by the photoresist layer is removed by a wet etching process to ensure that the edge metal structure will not cause the risk of peeling off the metal film layer and machine downtime in subsequent processes.

[0112] S610, stripping the photoresist layer to form an array substrate.

[0113] The embodiment of the present invention utilizes the photoresist layer as a mask and adopts a wet etching process to etch the edge metal structure, thereby removing the edge metal structure with the help of the photoresist layer, avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, reducing the process difficulty, and ensuring structural stability.

[0114] Optional, Fig. 9A partial structural diagram of an array substrate provided by an embodiment of the present invention is shown in FIG. Fig. 9 As shown, the array substrate includes a first drive circuit setting area 131, a second drive circuit setting area 132, a third drive circuit setting area 133 and a fourth drive circuit setting area 134; the first drive circuit setting area 131, the second drive circuit setting area 132, the third drive circuit setting area 133 and the fourth drive circuit setting area 134 are arranged in an array; the first drive circuit setting area 131 and the second drive circuit setting area 132 are arranged along the column direction, and the first drive circuit setting area 131 and the fourth drive circuit setting area 134 are arranged along the row direction; the first metal layer and the second metal layer in different drive circuit setting areas can be patterned using the same mask structure, thereby reducing the number of mask structures, reducing process steps and production costs. The array substrate also includes a first edge area 141, a second edge area 42, a third edge area 143 and a fourth edge area 144, a first edge metal structure 1411 is located in the first edge area 141, a second edge metal structure is located in the second edge area 142, a third edge metal structure 1431 is located in the third edge area 143 and a fourth edge metal structure 1441 is located in the fourth edge area 144. Fig.10 A flow chart of another method for preparing an array substrate provided by an embodiment of the present invention is shown in FIG. Fig.10 As shown, the method for preparing the array substrate includes:

[0115] S701, providing a substrate.

[0116] S702, prepare a driving circuit layer on one side of the substrate; the driving circuit layer includes multiple driving circuit setting areas and multiple edge areas, the driving circuit setting areas include a first driving circuit setting area, a second driving circuit setting area, a third driving circuit setting area and a fourth driving circuit setting area, the edge areas include a first edge area, a second edge area, a third edge area and a fourth edge area, and along the thickness direction of the substrate, the driving circuit setting areas do not overlap with the edge areas.

[0117] S703, using a shift exposure process in the driving circuit layer, sequentially forming a first pixel driving circuit structure in the first driving circuit setting area and a first edge metal structure in the first edge area, forming a second pixel driving circuit structure in the second driving circuit setting area and a second edge metal structure in the second edge area, forming a third pixel driving circuit structure in the third driving circuit setting area and a third edge metal structure in the third edge area, and forming a fourth pixel driving circuit structure in the fourth driving circuit setting area and a fourth edge metal structure in the fourth edge area.

[0118] Among them, four driving circuit setting areas are included on the same substrate, and the first metal layer and the second metal layer in the first driving circuit setting area 131, the second driving circuit setting area 132, the third driving circuit setting area 133 and the fourth driving circuit setting area 134 are patterned in sequence using the same mask structure and a shift exposure process. The first pixel driving circuit structure formed in the first driving circuit setting area 131, the second pixel driving circuit structure formed in the second driving circuit setting area 132, the third pixel driving circuit structure formed in the third driving circuit setting area 133 and the fourth pixel driving circuit structure formed in the fourth driving circuit setting area 134 are the same, the first edge metal structure 1411 and the fourth edge metal structure 1441 are formed on the same side, the second edge metal structure 1421 and the third edge metal structure 1431 are formed on the same side, and the first edge metal structure 1411, the second edge metal structure 1421, the third edge metal structure 1431 and the fourth edge metal structure 1441 can be removed by the same process.

[0119] S704, preparing a photoresist layer on the side of the driving circuit layer away from the substrate, wherein the photoresist layer does not overlap with the first edge metal structure, the second edge metal structure, the third edge metal structure and the fourth edge metal structure along the thickness direction of the substrate.

[0120] Among them, the first driving circuit setting area 141, the second driving circuit setting area 142, the third driving circuit setting area 143 and the fourth driving circuit setting area 144 are coated with a photoresist layer, and the edge area is not coated with a photoresist layer, so that the first edge metal structure 1411, the second edge metal structure 1421, the third edge metal structure 1431 and the fourth edge metal structure 1441 are all in an exposed state, which is convenient for using the photoresist layer as a mask. The first edge metal structure 1411, the second edge metal structure 1421, the third edge metal structure 1431 and the fourth edge metal structure 1441 are removed by the same process, thereby reducing the difficulty and cost of preparation, avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, and subsequently ensuring the structural stability of the array substrate.

[0121] S705 , using the photoresist layer as a mask, etching the first edge metal structure, the second edge metal structure, the third edge metal structure, and the fourth edge metal structure.

[0122] S706, peeling off the photoresist layer to form an array substrate.

[0123] In the embodiment of the present invention, a shift exposure process is adopted in the driving circuit layer to sequentially form a first pixel driving circuit structure in the first driving circuit setting area and a first edge metal structure in the first edge area, a second pixel driving circuit structure in the second driving circuit setting area and a second edge metal structure in the second edge area, a third pixel driving circuit structure in the third driving circuit setting area and a third edge metal structure in the third edge area, and a fourth pixel driving circuit structure in the fourth driving circuit setting area and a fourth edge metal structure in the fourth edge area; a photoresist layer is prepared on the side of the driving circuit layer away from the substrate; along the thickness direction of the substrate, the photoresist layer and the first edge metal structure, the second edge metal structure, the third edge metal structure and the fourth edge metal structure do not overlap; the photoresist layer is used as a mask to etch the first edge metal structure, the second edge metal structure, the third edge metal structure and the fourth edge metal structure, so that the first edge metal structure, the second edge metal structure, the third edge metal structure and the fourth edge metal structure are synchronously removed in the same process, thereby reducing the difficulty and cost of preparation, avoiding the risk of metal film layer peeling and machine downtime in subsequent processes, and subsequently ensuring the structural stability of the array substrate.

[0124] Based on the same inventive concept, an embodiment of the present invention further provides an array substrate, which is prepared by the array substrate preparation method provided by any embodiment of the present invention. Therefore, the array substrate provided by the embodiment of the present invention includes the technical features of the array substrate preparation method provided by any embodiment of the present invention, and can achieve the beneficial effects of the array substrate preparation method provided by any embodiment of the present invention. The similarities can be referred to the above description of the array substrate preparation method provided by the embodiment of the present invention, and will not be repeated here.

[0125] Based on the same inventive concept, an embodiment of the present invention further provides a display panel, Fig.11 A schematic diagram of a display device according to an embodiment of the present invention is shown in FIG. Fig.11 As shown, the display panel 200 includes an array substrate 100; the display panel also includes a light-emitting element 101, and the light-emitting element 101 is electrically connected to a driving circuit 102 in the array substrate 100. Therefore, the display panel provided by the embodiment of the present invention includes the technical features of the array substrate provided by any embodiment of the present invention, and can achieve the beneficial effects of the array substrate provided by any embodiment of the present invention. The similarities can be referred to the above description of the array substrate provided by the embodiment of the present invention, and will not be repeated here.

[0126] Optionally, the light emitting element 101 includes one of Micro LED and Mini LED. The size of Micro LED can be below 100 μm, and the size of Mini LED can be around 100 μm-500 μm. Since Micro LED and Mini LED have the characteristics of small chip size, high integration and self-luminescence, the light emitting module has great advantages in brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability.

[0127] Fig.12 A schematic diagram of a display device according to an embodiment of the present invention is shown in FIG. Fig.12 As shown, the display device 300 includes the display panel 200 described in the above embodiment.

[0128] It should be noted that since the display device provided in this embodiment has the same or corresponding beneficial effects as the display panel in the above embodiment, no further description is given here. The display device 300 provided in the embodiment of the present invention can be Fig.12 The mobile phone shown can also be any electronic product with a display function, including but not limited to the following categories: televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, medical equipment, industrial control equipment, touch interactive terminals, etc. The embodiments of the present invention do not specifically limit this.

[0129] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing an array substrate, characterized in that: include: providing a substrate; Preparing a driving circuit layer on one side of the substrate; The driving circuit layer includes a plurality of driving circuit arrangement areas and a plurality of edge areas, and along the thickness direction of the substrate, the driving circuit arrangement areas do not overlap with the edge areas; A pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using a shift exposure process, wherein the pixel driving circuit structure is located in the driving circuit setting area, and the edge metal structure is located in the edge area; A photoresist layer is prepared on a side of the driving circuit layer away from the substrate, and along a thickness direction of the substrate, the photoresist layer does not overlap with the edge metal structure; Using the photoresist layer as a mask, etching the edge metal structure; The photoresist layer is peeled off to form an array substrate.

2. The method for preparing an array substrate according to claim 1, characterized in that: The driving circuit layer at least includes a first metal layer, a second metal layer and a third metal layer; A driving circuit layer is prepared on one side of the substrate; comprising: preparing a first metal layer on one side of the substrate; Preparing a second metal layer on a side of the first metal layer away from the substrate; A third metal layer is formed on a side of the second metal layer away from the substrate.

3. The method for preparing an array substrate according to claim 2, wherein: The pixel driving circuit structure is formed on the first metal layer, the second metal layer and the third metal layer respectively; The edge metal structure is formed in the third metal layer.

4. The method for preparing an array substrate according to claim 2, wherein: A pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using a shift exposure process, and the method also includes: A mask structure is provided, wherein the mask structure includes a plurality of hollow regions, wherein along the thickness direction of the substrate, the hollow regions at least partially overlap with the driving circuit arrangement region.

5. The method for preparing an array substrate according to claim 4, characterized in that: The hollow area at least includes a first hollow area and a second hollow area that are spaced apart from each other, and the first hollow area and the second hollow area have different hollow shapes.

6. The method for preparing an array substrate according to claim 4, characterized in that: The driving circuit setting area at least includes a first sub-driving circuit setting area and a second sub-driving circuit setting area, the pixel driving circuit structure includes a first pixel driving circuit structure and a second pixel driving circuit structure, the first pixel driving circuit structure is located in the first sub-driving circuit setting area, and the second pixel driving circuit structure is located in the second sub-driving circuit setting area; A pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using a shift exposure process, including: Using the first hollowed-out area in the mask structure to form the first pixel driving circuit structure in the first sub-driving circuit setting area; The mask structure is moved along a first direction by a preset distance to expose the edge metal structure; wherein the first direction is a direction from the first drive circuit setting area to the second sub-drive circuit setting area, and the edge metal structure is located in the second sub-drive circuit setting area away from the first sub-drive circuit setting area; A second pixel driving circuit structure is formed in the second sub-driving circuit setting area by utilizing the second hollowed-out area in the mask structure.

7. The method for preparing an array substrate according to claim 6, characterized in that: The mask structure is moved along the first direction by a preset distance to expose the edge metal structure, and then the method further includes: The mask structure is aligned with the second sub-driving circuit setting area.

8. The method for preparing a display panel according to claim 6, characterized in that: The first sub-driving circuit setting area and the edge region further include a spacing area, and along the thickness direction of the substrate, the photoresist layer overlaps with the spacing area.

9. The method for preparing an array substrate according to claim 8, characterized in that: Along the first direction, the width of the spacing area is W, wherein 1 mm≤W≤10 mm.

10. The method for preparing an array substrate according to claim 1, characterized in that: Using the photoresist layer as a mask to etch the edge metal structure includes: The photoresist layer is used as a mask to remove the edge metal structure by wet etching.

11. The method for preparing an array substrate according to claim 1, characterized in that: The array substrate comprises a first driving circuit arrangement area, a second driving circuit arrangement area, a third driving circuit arrangement area and a fourth driving circuit arrangement area; The first drive circuit setting area, the second drive circuit setting area, the third drive circuit setting area and the fourth drive circuit setting area are arranged in an array; the first drive circuit setting area and the second drive circuit setting area are arranged along a column direction, and the first drive circuit setting area and the fourth drive circuit setting area are arranged along a row direction; A pixel driving circuit structure and an edge metal structure are formed in the driving circuit layer by using a shift exposure process, including: A shift exposure process is adopted in the driving circuit layer to sequentially form a first pixel driving circuit structure and a first edge metal structure in the first driving circuit setting area, a second pixel driving circuit structure and a second edge metal structure in the second driving circuit setting area, a third pixel driving circuit structure and a third edge metal structure in the third driving circuit setting area, and a fourth pixel driving circuit structure and a fourth edge metal structure in the fourth driving circuit setting area.

12. The method for preparing an array substrate according to claim 11, characterized in that: A photoresist layer is prepared on a side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer does not overlap with the edge metal structure, including: A photoresist layer is prepared on the side of the driving circuit layer away from the substrate, and along the thickness direction of the substrate, the photoresist layer does not overlap with the first edge metal structure, the second edge metal structure, the third edge metal structure and the fourth edge metal structure.

13. An array substrate, characterized in that: The array substrate is prepared by the method for preparing the array substrate according to any one of claims 1 to 12.

14. A display panel, characterized in that: The display panel comprises the array substrate as claimed in claim 13; The display panel further includes a light emitting element, and the light emitting element is electrically connected to a driving circuit in the array substrate.

15. The display panel according to claim 14, characterized in that: The light emitting element includes one of Micro LED and Mini LED.

16. A display device, characterized in that: A display panel comprising any one of claims 14-15.

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