Ultrahigh purity oxygen-free copper and method for producing the same
By using a repeated purification method under near-equilibrium solidification conditions in a vacuum environment and gradually reducing the lifting speed of the heating hood, impurity elements in the copper melt are separated, solving the problem of preparing high-purity oxygen-free copper in the existing technology and realizing the preparation of ultra-high purity oxygen-free copper with high purity and low oxygen content.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-14
- Publication Date
- 2026-07-03
AI Technical Summary
Existing technologies struggle to efficiently prepare high-purity oxygen-free copper, especially in large-scale integrated circuits and large-size displays. Conventional methods suffer from high production costs and operational difficulties, which affect the properties of copper.
In a vacuum environment, under near-equilibrium solidification conditions, the purity of copper is gradually improved by repeatedly purifying the molten copper, gradually reducing the lifting speed of the heating hood, separating the impurity elements in the precipitated solid phase and the remaining liquid phase, and finally preparing ultra-high purity oxygen-free copper.
The preparation of ultra-high purity oxygen-free copper with high density and low oxygen content has been achieved, with a purity of 5N~6N, oxygen content <2ppm, and hydrogen content <1ppm. This avoids defects such as ingot inclusions and is simple and reliable to operate.
Abstract
Citation Information
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