Substrate taking device and method for assisting liquid phase epitaxy mercury cadmium telluride material after epitaxy

Abstract

The invention discloses a device and a method for taking a piece after assisting epitaxy of a liquid phase epitaxy tellurium-cadmium-mercury material, and relates to a semiconductor thin film preparation technology, the piece taking device is strip-shaped, and comprises a bulge (101) which is arranged in the range of a specification adjusting lantern ring (103) and is used for abutting against a substrate groove; the specification adjusting lantern ring (103) is matched with the size of the target tellurium-cadmium-mercury epitaxial wafer, comprises a corresponding specification and is used for being arranged on the bulge (101) in a sleeving manner; and the side baffles (102) are arranged on two sides of the sheet taking device and are used for fixing a graphite boat sliding strip. According to the auxiliary wafer taking device and the wafer taking method provided by the embodiment of the invention, the probability of cracking and cracking during wafer taking can be reduced, and the integrity of the tellurium-cadmium-mercury epitaxial wafer is ensured.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor thin film preparation, and in particular to a device and method for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy. Background Art

[0002] Mercury cadmium telluride (HgCdTe) is a pseudo binary compound made by mixing HgTe with a negative bandgap (Eg = -0.3eV) and CdTe with a positive bandgap (Eg = 1.6eV). Its bandgap can be adjusted by changing the cadmium component, so that its detection range can cover all infrared bands. It is currently the most successful and widely used infrared detector material. Mercury cadmium telluride materials are usually prepared using molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE).

[0003] Liquid phase epitaxy is a quasi-equilibrium growth method and is currently the most mature epitaxy method. Currently, liquid phase epitaxy generally adopts two technical routes: horizontal and vertical. Horizontal liquid phase epitaxy technology is mature and has a wide range of applications. As the specifications of infrared focal plane detectors increase, the size and quality requirements of the available area of ​​HgCdTe epitaxial wafers are gradually increasing. At present, the horizontal liquid phase epitaxy process of HgCdTe thin film is usually carried out in a high-purity graphite boat. The CdZnTe substrate is placed in the substrate groove on the graphite slide. Due to the difference in substrate thickness, a gasket is usually placed under the substrate to adjust the height. During the epitaxy process, the HgCdTe growth solution in a molten state is placed above the CdZnTe substrate by pulling the boat, and the temperature is slowly lowered to achieve the growth of the HgCdTe epitaxial film on the CdZnTe substrate. After the growth of the HgCdTe epitaxial film is completed, the boat is pulled again to remove the HgCdTe growth solution to achieve the separation of the growth solution from the HgCdTe epitaxial wafer. After the growth is completed, the operator presses the gasket under the HgCdTe epitaxial wafer with his fingers and exerts upward force to remove the HgCdTe epitaxial wafer from the substrate groove. However, the existing method of removing the wafer leads to a high probability of cracks or splits in the HgCdTe epitaxial wafer, which seriously affects the yield and output of HgCdTe epitaxial materials. Summary of the invention

[0004] The embodiments of the present application provide a device and method for taking out a mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, so as to reduce the probability of cracks and splits when taking out the wafer and ensure the integrity of the mercury cadmium telluride epitaxial wafer.

[0005] The embodiment of the present application provides a device for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, and the device for taking out a piece of mercury cadmium telluride is in a strip shape and includes:

[0006] The protrusion 101 is arranged within the range of the specification adjustment ring 103 and is used to abut against the substrate groove;

[0007] A specification adjustment ring 103 adapted to the size of the target HgCdTe epitaxial wafer including corresponding specifications, and used for being sleeved on the protrusion 101;

[0008] The side baffles 102 are arranged on both sides of the film taking device and are used to fix the graphite boat slide bar.

[0009] Optionally, the height of the specification adjustment ring 103 is consistent with the height of the protrusion 101 .

[0010] The present application also provides a method for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, which is implemented based on the aforementioned device for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, and includes the following steps:

[0011] According to the size specifications of the HgCdTe epitaxial wafer, a suitable specification adjustment ring 103 is selected, and the adjustment ring 103 is put on the protrusion 101 against the substrate groove;

[0012] The film removal device is placed under the graphite boat slide bar, and the graphite boat slide bar is fixed by the side baffle 102;

[0013] Based on the movement of the slide bar in a direction horizontal to the lateral baffle 102, the protrusion 101 against the substrate groove contacts with the gasket in the substrate groove to complete the positioning;

[0014] The gasket below the HgCdTe epitaxial wafer is pressed upward against the surface of the graphite boat slide and the lower surface of the wafer removal device by pressing against the protrusion 101 of the substrate groove, so that the HgCdTe epitaxial wafer is removed from the substrate groove.

[0015] Optionally, the height of the selected specification adjustment ring 103 is consistent with the height of the protrusion 101.

[0016] Optionally, after the adjusting ring 103 is put on the protrusion 101 against the substrate groove, the following steps are further included:

[0017] The specification adjustment ring 103 is tightly fitted with the protrusion 101 against the substrate groove.

[0018] The auxiliary wafer picking device and wafer picking method of the embodiment of the present application can reduce the probability of cracks and splits when picking up the wafer, and ensure the integrity of the mercury cadmium telluride epitaxial wafer.

[0019] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0021] Figure 1 The overall structure of the auxiliary film-taking device according to the embodiment of the present application is schematically shown;

[0022] Figure 2 A schematic diagram of the side structure of the auxiliary film-taking device according to an embodiment of the present application;

[0023] Figure 3 This is a schematic diagram of the specification adjustment ring structure of the auxiliary film taking device of the embodiment of the present application;

[0024] Figure 4 The figure is a schematic diagram of the auxiliary film taking process using the auxiliary film taking device according to the embodiment of the present application. DETAILED DESCRIPTION

[0025] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0026] When the growth solution separates from the HgCdTe epitaxial wafer during the liquid phase epitaxy process, part of the growth solution will remain on the HgCdTe epitaxial film. Since the size of the CdZnTe substrate is generally slightly smaller than the size of the substrate slot, the HgCdTe growth solution will enter the gap between the two. After cooling, the HgCdTe epitaxial wafer and the graphite boat substrate slot are adhered. Currently, manual wafer removal is adopted. The operator presses the finger against the gasket under the HgCdTe epitaxial wafer and exerts force upward to make the HgCdTe epitaxial wafer come out of the substrate slot. However, during the operation, the contact area between the finger and the gasket surface is small and the contact position cannot be fixed, which makes it difficult to ensure uniform, continuous and stable force. If the edge of the HgCdTe epitaxial wafer is adhered to the graphite boat, manual wafer removal is prone to cracks or even splits due to improper force, which affects the yield and output of HgCdTe epitaxial materials.

[0027] The present application embodiment provides a device for taking out a piece of HgCdTe material after epitaxy by auxiliary liquid phase epitaxy, such as Figure 1 , Figure 2 As shown, the film taking device is in a strip shape and comprises:

[0028] The protrusion 101 is arranged within the range of the specification adjustment ring 103 and is used to abut against the substrate groove;

[0029] A specification adjustment ring 103 adapted to the size of the target HgCdTe epitaxial wafer including corresponding specifications, and used for being sleeved on the protrusion 101;

[0030] The side baffles 102 are arranged on both sides of the film taking device and are used to fix the graphite boat slide bar.

[0031] In some embodiments, Figure 3 As shown, the height of the specification adjustment ring 103 is consistent with the height of the protrusion 101.

[0032] The auxiliary wafer taking device of the present application is used in conjunction with the graphite boat slide bar. When taking out the HgCdTe epitaxial wafer, the auxiliary wafer taking device is pushed upward to press the gasket under the HgCdTe epitaxial wafer, so that the HgCdTe epitaxial wafer is separated from the substrate groove, and the wafer taking is completed.

[0033] The present application also provides a method for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, which is implemented based on the aforementioned device for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, and includes the following steps:

[0034] In step S101, a suitable specification adjustment ring 103 is selected according to the size specification of the HgCdTe epitaxial wafer, and the adjustment ring 103 is placed on the protrusion 101 against the substrate groove. In some embodiments, the height of the selected specification adjustment ring 103 is consistent with the height of the protrusion 101.

[0035] In some embodiments, after putting the adjusting collar 103 on the protrusion 101 against the substrate groove, the method further includes: adjusting the specification so that the adjusting collar 103 and the protrusion 101 against the substrate groove fit tightly.

[0036] Next, in step S102 , the film removal device is placed under the graphite boat slide bar, and the graphite boat slide bar is fixed by the side baffle plate 102 to prevent the latter from moving in a direction perpendicular to the side baffle plate 102 .

[0037] In step S103, based on the movement of the slider in the direction horizontal to the lateral baffle 102, the protrusion 101 against the substrate groove contacts the gasket in the substrate groove (the HgCdTe epitaxial wafer is above the gasket at this time) to complete the positioning. The size of the protrusion 101 against the substrate groove is slightly smaller than the substrate groove, and the contact area between the two is increased as much as possible while ensuring that the protrusion 101 against the substrate groove can press the gasket upward.

[0038] After determining that the auxiliary wafer picking device has been positioned, in step S104, the surface of the graphite boat slide and the lower surface of the wafer picking device are manually pressed with both hands to press the gasket under the mercury cadmium telluride epitaxial wafer upward by pressing the protrusion 101 of the substrate groove, so that the mercury cadmium telluride epitaxial wafer is removed from the substrate groove.

[0039] Finally, the mercury cadmium telluride epitaxial wafer can be removed, completing the entire wafer removal process.

[0040] The device for taking out the mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy of the present application can reduce the problem of cracks or even splits in the mercury cadmium telluride epitaxial wafers that are easily caused by manual taking out after the completion of liquid phase epitaxy. On the one hand, the device can effectively improve the success rate of taking out the wafer after epitaxy, and even if the mercury cadmium telluride epitaxial wafer is adhered to the graphite boat, it can also effectively improve the integrity of the epitaxial wafer after it is taken out; on the other hand, it can be applied to mercury cadmium telluride epitaxial wafers of various specifications, is simple to operate, can be reused, and reduces the cost of use.

[0041] It should be noted that in the various embodiments of the present application, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0042] The serial numbers of the above-mentioned embodiments of the present application are for description only and do not represent the advantages or disadvantages of the embodiments.

[0043] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A device for removing a sheet after the epitaxy of mercury cadmium telluride material by auxiliary liquid phase epitaxy, characterized in that: The film taking device is in a strip shape and comprises: A protrusion (101) is arranged within the range of a specification adjustment ring (103) and is used to abut against the substrate groove; A specification adjustment collar (103) adapted to the size of the target mercury cadmium telluride epitaxial wafer including corresponding specifications, and used for being sleeved on the protrusion (101); Side baffles (102) are arranged on both sides of the film taking device and are used to fix the graphite boat slide bar.

2. The device for taking out the HgCdTe material after epitaxy by auxiliary liquid phase epitaxy according to claim 1, characterized in that: The height of the specification adjustment ring (103) is consistent with the height of the protrusion (101).

3. A method for taking out a piece of mercury cadmium telluride material after epitaxy by auxiliary liquid phase epitaxy, characterized in that: The device for taking out the sheet after the epitaxy of the mercury cadmium telluride material by auxiliary liquid phase epitaxy as claimed in claim 1 or 2 comprises the following steps: Selecting a suitable specification adjustment ring (103) according to the size specifications of the mercury cadmium telluride epitaxial wafer, and sleeve the adjustment ring (103) on the protrusion (101) against the substrate groove; The film removal device is placed under the graphite boat slide bar, and the graphite boat slide bar is fixed by a side baffle (102); Based on the movement of the slide bar in a direction horizontal to the lateral baffle (102), the protrusion (101) against the substrate groove contacts the gasket in the substrate groove to complete the positioning; The gasket below the HgCdTe epitaxial wafer is pressed upward against the surface of the graphite boat slide and the lower surface of the wafer removal device by pressing against the protrusion 101 of the substrate groove, so that the HgCdTe epitaxial wafer is removed from the substrate groove.

4. The method for taking out a piece of HgCdTe material after epitaxy by auxiliary liquid phase epitaxy as claimed in claim 3, characterized in that: The selected specification adjusts the height of the collar (103) to be consistent with the height of the protrusion (101).

5. The method for taking out a piece of HgCdTe material after epitaxy by auxiliary liquid phase epitaxy as claimed in claim 3, characterized in that: After the adjusting collar (103) is put on the protrusion (101) against the substrate groove, the method further comprises: The specification adjustment ring (103) is tightly fitted with the protrusion (101) against the substrate groove.

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