A multi-dimensional measurement pixel structure and method for charged particle detection

By designing a multi-dimensional measurement pixel structure, the simultaneous measurement of the impact position, deposited energy and incident time of charged particles is achieved, which solves the problems of low time accuracy and inconvenient reset, and improves detection efficiency and radiation resistance.

CN119535524BActive Publication Date: 2025-10-17INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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Patent Information

Application Number
CN202411528594.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-10-30
Publication Date
2025-10-17
Estimated Expiration
2044-10-30

AI Technical Summary

Technical Problem

Existing silicon pixel sensors can only record particle hits or energy in charged particle detection, have low time accuracy and require manual reset, resulting in long undetectable dead time.

Method used

A multi-dimensional measurement pixel structure is designed, including charge collection, charge-sensitive preamplification, energy measurement, identification and comprehensive identification, and time measurement units, to achieve simultaneous measurement of the charged particle impact position, deposited energy, and incident time. A simplified folded cascode operational amplifier and a radiation-resistant counter are used to improve the time measurement accuracy.

Benefits of technology

It realizes the multi-dimensional measurement function of charged particles, reduces time measurement error, has radiation resistance and does not require manual reset.

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Abstract

The application relates to the field of charged particle detection, and discloses a multi-dimension measurement pixel structure and method for charged particle detection, which comprises a plurality of pixel units, each of which comprises a charge collection unit, a charge sensitive preamplification unit, an energy measurement unit, a discrimination unit and a time measurement unit. The charge collection unit collects a to-be-identified signal; the charge sensitive preamplification unit amplifies the received to-be-identified signal to obtain an amplified signal of the to-be-identified signal; the energy measurement unit processes the received amplified signal to obtain amplitude information of the to-be-identified charge signal; the discrimination unit processes the received amplified signal to obtain a fast-slow arrival time discrimination signal, and transmits the fast-slow arrival time discrimination signal to a comprehensive identification unit of a peripheral shared unit to obtain total arrival time discrimination signal and identification information of the to-be-identified charge signal after comprehensive processing; and the time measurement unit processes the received total arrival time discrimination signal to obtain coarse-fine arrival time information of the to-be-identified charge signal. The application realizes the functions of multi-dimension measurement of time, energy and position.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of charged particle detection, and in particular to a multi-dimensional measurement pixel structure and method for charged particle detection. BACKGROUND

[0002] When particles pass through matter, they cause ionization and excitation, and the elements that detect the physical changes such as ionization effects in gases, liquids or solids are called nuclear detectors. When particles are incident on the sensitive region of a semiconductor detector, they lose energy and generate electron-hole pairs, and are collected by drifting and separating from the two ends of the electrode under the action of an external electric field, thereby forming an output pulse signal. A silicon pixel chip is one of the mainstream detector chips at present, which mainly consists of a dense array of pixels and peripheral readout circuits, each pixel containing a charge-sensitive unit that collects electrons and outputs an electrical signal, and a front-end signal processing circuit, and different signals generated by the interaction of particles with different pixels provide accurate two-dimensional position information. Its small size brings excellent spatial resolution and lower material mass, and can achieve low noise and fast readout rate. Therefore, it has been widely used in various fields such as physical experiments, space exploration, medical instruments, material analysis and environmental exploration:

[0003] Pixel sensors can be divided into monolithic and hybrid types in structure. The monolithic type integrates the charge-sensitive unit and the front-end circuit on the same substrate, which minimizes the complexity of the interface design. This integration ensures high granularity, low material budget and relatively small equivalent input capacitance. Monolithic active pixel sensors are one of the most promising technologies in monolithic sensors at present. The hybrid pixel sensor is characterized in that the charge-sensitive unit and the front-end readout circuit are on separate substrates and are connected by flip-chip bonding. The charge-sensitive unit and the readout circuit of the hybrid type can use different materials and be optimized separately. For example, in X-ray imaging, the sensor part uses GaAs, CdTe and other non-silicon materials, while the readout part uses silicon design. The separate design of the charge-sensitive unit also makes it possible to design larger sizes. Therefore, compared with the monolithic type, the hybrid type usually has flexible readout functions and wider applications. However, the complex interface and numerous production steps make the hybrid pixel detector relatively more expensive.

[0004] With the rapid development of high-energy physics, higher requirements are put forward for silicon pixel sensors that can be used for charged particle detection. Most of the current silicon pixel sensors can only record the hit or energy of charged particles, and the time accuracy can only reach several microseconds, and manual reset is required, which brings a lot of unmeasurable dead time. SUMMARY

[0005] In response to the above problems, the purpose of the present invention is to provide a multi-dimensional measurement pixel structure and method for charged particle detection, which realizes the multi-dimensional measurement functions of time, energy and position, and can perform both charged particle track measurement and charged particle hit measurement, solving the problem of low time measurement accuracy of multi-dimensional measurement pixel sensors, realizing automatic reset, and having certain radiation resistance.

[0006] To achieve the above-mentioned purpose, the present invention adopts the following technical solutions: a multi-dimensional measurement pixel structure for charged particle detection, which includes: a plurality of pixel units and a peripheral common unit, each pixel unit can measure the impact position, deposition energy and incident time of the charged particles, and the plurality of pixel units are connected to the peripheral common unit, and the measured impact position, deposition energy and incident time of the charged particles are transmitted to the peripheral common unit for processing, and then the arrival time information of the charge signal to be identified is output; wherein each pixel unit includes: a charge collection unit for collecting charge and obtaining the signal to be identified; a charge sensitive preamplifier unit for amplifying the received signal to be identified and obtaining the signal to be identified an amplified signal; an energy measurement unit, used to process the received amplified signal to obtain amplitude information of the charge signal to be identified; an identification unit, used to process the received amplified signal to obtain a fast and slow arrival time identification signal of the charge signal to be identified, and transmit it to the peripheral shared unit; the peripheral shared unit includes a comprehensive identification unit and a time measurement unit; wherein: the comprehensive identification unit is used to receive multiple fast and slow arrival time identification signals transmitted by multiple identification units, and obtain a total arrival time identification signal and identification information of the charge signal to be identified after comprehensive processing; the time measurement unit is used to process the received total arrival time identification signal to obtain coarse and fine arrival time information of the charge signal to be identified.

[0007] Furthermore, the charge collection unit adopts a charge collection diode or a top metal layer collection unit.

[0008] Furthermore, the charge-sensitive preamplifier unit includes a simplified folded cascode operational amplifier, a deep negative feedback circuit, a bleeder circuit, and a bias circuit;

[0009] The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input terminal and the output terminal of the simplified folded cascode operational amplifier. The bias circuit is connected through a current mirror to provide the simplified folded cascode operational amplifier with a DC bias required for normal operation.

[0010] Furthermore, the energy measurement unit is composed of a source follower circuit, which is used to read out the output signal of the charge-sensitive preamplifier unit to obtain amplitude information of the charge signal to be identified.

[0011] Further, the discrimination unit includes a high threshold comparator and a low threshold comparator;

[0012] The high threshold comparator is used to discriminate the amplified signal output by the received charge sensitive preamplifier unit, and obtain the slow arrival time discrimination signal of the to-be-identified charge signal after comparing the amplified signal with the set high threshold value;

[0013] The low threshold comparator is used to discriminate the amplified signal output by the received charge sensitive preamplifier unit, and obtain the fast arrival time discrimination signal of the to-be-identified charge signal after comparing the amplified signal with the set low threshold value.

[0014] Further, the comprehensive identification unit comprises a multi-input OR gate circuit and a digital buffer;

[0015] The multi-input OR gate circuit for receiving the fast arrival time discrimination signals of the plurality of pixel units outputs a total arrival time discrimination signal and transmits the total arrival time discrimination signal to the time measurement unit;

[0016] The multi-input OR gate circuit for receiving the slow arrival time discrimination signal outputs the identification information of the charged particle through the digital buffer.

[0017] Further, the time measurement unit comprises an enable logic circuit, a multiplexer circuit, an anti-radiation counter, a latch, a time-amplitude converter, a transmission gate circuit, a digital buffer circuit and a source follower circuit;

[0018] The enable logic circuit takes the total arrival time discrimination signal and an externally input STOP signal as inputs, and outputs a signal connected to the enable end of the multiplexer circuit through the transmission gate, and the output of the multiplexer circuit is connected to the input end of the anti-radiation counter;

[0019] The rising edge of the least significant bit output of the anti-radiation counter is latched by the latch, and the latched signal is taken as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit, the output of the enable logic circuit is also taken as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit, the total arrival time discrimination signal output by the comprehensive identification unit is taken as the control signal of the NMOS switch of the time-amplitude converter, and is also taken as the reset signal of the time-amplitude converter through a level shifter, a charging and discharging capacitor is connected in parallel, and a PMOS controlled by an external DC level is taken as the current source of the time-amplitude converter.

[0020] A use method of the multi-dimensional measurement pixel structure for charged particle detection, which comprises:

[0021] Obtaining the to-be-identified charge signal through the charge collection unit;

[0022] Inputting the to-be-identified charge signal into the charge sensitive preamplifier unit for amplification processing to obtain an amplified signal of the to-be-identified charge signal;

[0023] The amplified signal is input to an energy measurement unit to obtain amplitude information of the to-be-identified charge signal;

[0024] The amplified signal is input to a discrimination unit to obtain fast / slow arrival time discrimination signals of the to-be-identified charge signal;

[0025] The fast / slow arrival time discrimination signals of the plurality of pixel units are input to a comprehensive identification unit to obtain total arrival time discrimination signals and identification information of the to-be-identified charge signal;

[0026] The total arrival time discrimination signals are input to a time measurement unit to obtain coarse / fine arrival time information of the to-be-identified charge signal.

[0027] Further, the charge collection unit adopts a charge collection diode or a highest metal layer collection unit to collect the charge signal of the charged particle incident to the pixel unit to obtain the to-be-identified charge signal.

[0028] Further, the total arrival time discrimination signals are input to the time measurement unit to obtain the coarse / fine arrival time information of the to-be-identified charge signal, including:

[0029] Through a transmission gate circuit, a common working mode of the radiation resistance counter and the time-amplitude converter or only the time-amplitude converter working mode is selected;

[0030] Through an enable logic circuit, the received total arrival time discrimination signals and an externally input STOP signal are processed into a counting enable signal of the radiation resistance counter;

[0031] Through a multiplexer, the received counting enable signal is input to the radiation resistance counter;

[0032] Through the radiation resistance counter, under the control of the counting enable signal, coarse arrival time counting is obtained;

[0033] Through a latch, a first rising edge output by the lowest bit of the radiation resistance counter is latched;

[0034] Through the time-amplitude converter, under the joint control of the received latched signal and the total arrival time discrimination signal, fine time counting is completed;

[0035] Through a digital buffer circuit, the received coarse arrival time counting is read out to obtain coarse arrival time information;

[0036] Through a source follower circuit, the received fine time counting is read out to obtain fine arrival time information.

[0037] The present application has the following advantages due to the above technical solutions:

[0038] The application realizes the multi-dimensional measurement function of simultaneously measuring the hitting position, deposition energy and arrival time of the charged particles, and can perform both charged particle track measurement and charged particle hitting measurement. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 A new super-pixel unit structure for charged particle detection in the embodiment of the application is shown in the figure.

[0040] Figure 2 A charge-sensitive preamplifier unit structure in the pixel unit in the embodiment of the application is shown in the figure.

[0041] Figure 3 A comprehensive identification unit structure in the peripheral shared unit in the embodiment of the application is shown in the figure.

[0042] Figure 4 A time measurement unit structure in the peripheral shared unit in the embodiment of the application is shown in the figure.

[0043] Figure 5 A signal processing flowchart of the super-pixel unit circuit for charge signal processing provided in the embodiment of the application is shown in the figure. DETAILED DESCRIPTION

[0044] To make the objectives, technical solutions and advantages of the embodiments of the application clearer, the technical solutions of the embodiments of the application will be described clearly and completely below with reference to the drawings of the embodiments of the application. Obviously, the described embodiments are part of the embodiments of the application, rather than all the embodiments of the application. Based on the described embodiments of the application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the application.

[0045] It should be noted that the terms used herein are only intended to describe specific embodiments, and are not intended to limit the exemplary embodiments according to the application. As used herein, the singular form is intended to include the plural form unless the context clearly indicates otherwise, and furthermore, it should be understood that when the terms "comprise" and / or "include" are used in the specification, there is a feature, step, operation, device, component and / or combination thereof.

[0046] The application provides a novel super-pixel unit structure for charged particle detection and a use method thereof. The application realizes a multi-dimension measurement function of simultaneously measuring the hit position, deposition energy and arrival time of the charged particle; the arrival time measurement error caused by the different energy carried by the hit particle can be effectively reduced due to the adoption of the discrimination unit; and the time measurement precision is greatly improved due to the cooperation of the radiation counter and the time-amplitude converter; in addition, the whole circuit does not need to be manually reset.

[0047] In one embodiment of the application, a multi-dimension measurement pixel structure for charged particle detection is provided. Figure 1 As shown in FIG. 1, the multi-dimension measurement pixel structure comprises a plurality of pixel units and a peripheral shared unit, each of the pixel units can measure the hit position, deposition energy and incident time of the charged particle, the plurality of pixel units are connected to the peripheral shared unit, and the measured hit position, deposition energy and incident time of the charged particle are transmitted to the peripheral shared unit for processing, and then the arrival time information of the to-be-identified charge signal is output.

[0048] Each of the pixel units comprises:

[0049] a charge collection unit, configured to collect charges and acquire a to-be-identified signal;

[0050] a charge-sensitive preamplification unit, configured to amplify the received to-be-identified signal to obtain an amplified signal of the to-be-identified signal;

[0051] an energy measurement unit, configured to process the received amplified signal to obtain amplitude information of the to-be-identified charge signal;

[0052] a discrimination unit, configured to process the received amplified signal to obtain fast-slow arrival time discrimination signals of the to-be-identified charge signal and transmit the fast-slow arrival time discrimination signals to the peripheral shared unit;

[0053] The peripheral shared unit comprises a comprehensive identification unit and a time measurement unit, wherein:

[0054] The comprehensive identification unit is configured to receive a plurality of total time of flight signals transmitted by the plurality of discrimination units, and to obtain a total time of flight signal and identification information of the to-be-identified charge signal after comprehensive processing.

[0055] The time measurement unit is configured to process the received total time of flight signal to obtain coarse and fine time of flight information of the to-be-identified charge signal.

[0056] In the above embodiment, the charge collection unit is a charge collection diode or a highest metal layer collection unit. In this embodiment, the charge collection diode is preferably an octagonal diode.

[0057] In the above embodiment, as shown in Figure 2 The charge-sensitive preamplification unit includes a simplified folded cascode operational amplifier, a deep negative feedback circuit, a bleeder circuit, and a bias circuit. The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input terminal and the output terminal of the simplified folded cascode operational amplifier, and the bias circuit is connected through a current mirror to provide the direct current bias required for normal operation of the simplified folded cascode operational amplifier.

[0058] In use, the to-be-identified signal is input to the inverting input terminal of the simplified folded cascode operational amplifier. The deep negative feedback circuit is used to provide stable output gain, and the bleeder circuit can release the charges continuously accumulated on the deep negative feedback circuit and stabilize the direct current operating point of the feedback. The non-inverting input terminal of the simplified folded cascode operational amplifier is connected to an externally adjustable direct current baseline signal, which can adjust the baseline value of the amplified signal to facilitate subsequent processing.

[0059] In the above embodiment, the energy measurement unit is composed of a source follower circuit, which is used to read out the output signal of the charge-sensitive preamplification unit to obtain the amplitude information of the to-be-identified charge signal.

[0060] In the above embodiment, the discrimination unit includes a high threshold comparator and a low threshold comparator. The high threshold comparator is used to discriminate the amplified signal output by the charge-sensitive preamplification unit, and after comparing the amplified signal with a set high threshold value, a slow time of flight discrimination signal of the to-be-identified charge signal is obtained. The low threshold comparator is used to discriminate the amplified signal output by the charge-sensitive preamplification unit, and after comparing the amplified signal with a set low threshold value, a fast time of flight discrimination signal of the to-be-identified charge signal is obtained. The high threshold value is set to ensure the detection efficiency, and the low threshold value is a lower threshold value relative to the high threshold value.

[0061] In the above embodiment, as shown in Figure 3As shown, the comprehensive identification unit includes a multi-input OR gate circuit and a digital buffer. The multi-input OR gate circuit for receiving the fast arrival time discrimination signals of the plurality of pixel units outputs a total arrival time discrimination signal and transmits to the time measurement unit; the multi-input OR gate circuit for receiving the slow arrival time discrimination signals outputs the identification information of the charged particle through the digital buffer.

[0062] In the above embodiment, as shown, Figure 4 As shown, the time measurement unit includes an enable logic circuit, a multiplexer circuit, an anti-radiation counter, a latch, a time-amplitude converter, a transmission gate circuit, a digital buffer circuit and a source follower circuit. The enable logic circuit takes the total arrival time discrimination signal and the externally input STOP signal as input, and outputs an enable signal connected to the enable end of the multiplexer circuit through the transmission gate. The output of the multiplexer circuit is connected to the input end of the anti-radiation counter. The anti-radiation counter is a D flip-flop cascade designed by hardening a plurality of internal nodes, and has a certain anti-radiation capability. The enable signal output by the multiplexer controls the counting. The rising edge of the lowest bit output of the anti-radiation counter is latched by the latch. The latch signal is used as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit. The output of the enable logic circuit is also used as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit. The total arrival time discrimination signal output by the comprehensive identification unit is used as the control signal of the NMOS switch of the time-amplitude converter, and also passes through a level shifter as the reset signal of the time-amplitude converter. A charge-discharge capacitor is connected in parallel. The PMOS controlled by the external DC level is used as the current source of the time-amplitude converter. Among them:

[0063] The enable logic circuit is used to process the received total arrival time discrimination signal and the externally input STOP signal into the enable signal of the multiplexer circuit;

[0064] The multiplexer is used to process the received enable signal into the counting enable signal of the anti-radiation counter;

[0065] The anti-radiation counter is used to perform time-to-digital conversion under the received counting enable signal;

[0066] The latch is used to latch the first rising edge of the received lowest bit output of the anti-radiation counter;

[0067] The time-amplitude converter is used to perform time-amplitude conversion under the received latch signal and total arrival time discrimination signal;

[0068] The transmission gate circuit is used to select the co-working mode of the anti-radiation counter and the time-amplitude converter or the working mode of the time-amplitude converter only;

[0069] A digital buffer circuit is used to read the output signal of the anti-radiation counter to obtain coarse time of arrival information.

[0070] A source follower circuit is used to read the output signal of the time-amplitude converter to obtain fine time of arrival information.

[0071] In use, the total time of arrival discrimination signal output by the comprehensive identification unit and the externally input rectangular wave signal STOP are used as inputs of the anti-radiation counter enable logic, and an enable signal is output.

[0072] In the anti-radiation counter and time-amplitude converter joint working mode, the enable signal controls the output of the multiplexer, the counter counts during the high level output of the multiplexer, and when the enable signal is pulled low, the counter stops counting and holds until it is reset by the arrival of the falling edge of the total time of arrival discrimination signal, the output of the counter is output through the digital buffer circuit to output coarse time of arrival information, a latch latches the first rising edge of the received lowest bit output of the anti-radiation counter, and under the joint control of the total time of arrival discrimination signal and the latch signal, the capacitor of the time-amplitude converter starts charging when the rising edge of the total time of arrival discrimination signal arrives, stops charging when the first rising edge of the lowest bit output of the counter arrives, and holds until it is reset by the arrival of the falling edge of the total time of arrival discrimination signal, and the latch signal is also reset at the same time, and the time-amplitude converter outputs fine time of arrival information through the source follower circuit.

[0073] In the time-amplitude converter only working mode, the multiplexer is not enabled, and the counter does not work, and the enable signal and the total time of arrival discrimination signal jointly control the capacitor of the time-amplitude converter to start charging when the rising edge of the total time of arrival discrimination signal arrives, to stop charging when the falling edge of the STOP signal arrives, and to hold until it is reset by the arrival of the falling edge of the total time of arrival discrimination signal, and the time-amplitude converter outputs fine time of arrival information through the source follower circuit.

[0074] In an embodiment of the present application, a method for using a novel super-pixel unit structure for charged particle detection is provided, which is based on the multi-dimensional measurement pixel structure for charged particle detection in the above embodiments. As shown in FIG. 1, the method comprises the following steps: Figure 5

[0075] S101, obtaining a to-be-identified charge signal through a charge collection unit;

[0076] S102, inputting the to-be-identified charge signal to a charge-sensitive preamplifier unit for amplification processing to obtain an amplified signal of the to-be-identified charge signal;

[0077] ​S103, input the amplified signal to an energy measurement unit to obtain amplitude information of the to-be-identified charge signal;

[0078] S104, input the amplified signal to a discrimination unit to obtain fast / slow arrival time discrimination signals of the to-be-identified charge signal;

[0079] S105, input the fast / slow arrival time discrimination signals of the plurality of pixel units to a comprehensive identification unit to obtain total arrival time discrimination signals and identification information of the to-be-identified charge signal;

[0080] S106, input the total arrival time discrimination signals to a time measurement unit to obtain coarse / fine arrival time information of the to-be-identified charge signal.

[0081] In the step S101, the charge collection unit is a charge collection diode or a highest metal layer collection unit, which collects the charge signal of the charged particle incident to the pixel unit, and further obtains the to-be-identified charge signal.

[0082] In the step S106, the total arrival time discrimination signals are input to the time measurement unit to obtain the coarse / fine arrival time information of the to-be-identified charge signal, including the following steps:

[0083] S1061, select the anti-radiation counter and the time-amplitude converter common working mode or only the time-amplitude converter working mode through a transmission gate circuit;

[0084] S1062, process the received total arrival time discrimination signals and the externally input STOP signal into a counting enable signal of the anti-radiation counter through an enable logic circuit;

[0085] S1063, input the received counting enable signal to the anti-radiation counter through a multiplexer;

[0086] S1064, obtain a coarse arrival time count under the control of the counting enable signal through the anti-radiation counter;

[0087] S1065, latch the first rising edge output by the lowest bit of the anti-radiation counter through a latch;

[0088] S1066, complete a fine time count under the joint control of the received latched signal and the total arrival time discrimination signals through a time-amplitude converter;

[0089] S1067, read out the received coarse arrival time count through a digital buffer circuit to obtain coarse arrival time information.

[0090] S1068, read out the received fine time count through a source follower circuit to obtain fine arrival time information.

[0091] The method provided by the embodiment is implemented based on the above-mentioned new super-pixel unit structure embodiments for charged particle detection, and the specific implementation method and detailed content are referred to the above-mentioned embodiments, which will not be described here.

[0092] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A multi-dimensional measurement pixel structure for charged particle detection, characterized in that: include: Multiple pixel units and peripheral shared units, each pixel unit can measure the impact position, deposited energy and incident time of the charged particles, and the multiple pixel units are connected to the peripheral shared unit. The measured impact position, deposited energy and incident time of the charged particles are transmitted to the peripheral shared unit for processing, and then the arrival time information of the charge signal to be identified is output; Each pixel unit includes: A charge collection unit, used to collect charges and obtain signals to be identified; A charge-sensitive preamplifier unit is used to amplify the received signal to be identified to obtain an amplified signal of the signal to be identified; an energy measurement unit, configured to process the received amplified signal to obtain amplitude information of the charge signal to be identified; an identification unit, configured to process the received amplified signal to obtain a fast or slow arrival time identification signal of the charge signal to be identified, and transmit the signal to the peripheral shared unit; The peripheral shared unit includes a comprehensive identification unit and a time measurement unit; wherein: A comprehensive identification unit is used to receive multiple fast and slow arrival time identification signals transmitted by multiple identification units, and obtain the total arrival time identification signal and identification information of the charge signal to be identified after comprehensive processing; a time measurement unit, configured to process the received total arrival time identification signal to obtain coarse and fine arrival time information of the charge signal to be identified; The integrated identification unit includes a multi-input OR gate circuit and a digital buffer; A multi-input OR gate circuit for receiving fast arrival time identification signals of a plurality of pixel units outputs a total arrival time identification signal and transmits it to a time measurement unit; A multi-input OR gate circuit is used for receiving a slow arrival time identification signal and outputting identification information of charged particles through a digital buffer.

2. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, wherein: The charge collection unit adopts a charge collection diode or a top metal layer collection unit.

3. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, wherein: The charge-sensitive preamplifier unit includes a simplified folded common-source common-gate operational amplifier, a deep negative feedback circuit, a bleeder circuit and a bias circuit; The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input terminal and the output terminal of the simplified folded cascode operational amplifier. The bias circuit is connected through a current mirror to provide the simplified folded cascode operational amplifier with a DC bias required for normal operation.

4. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, wherein: The energy measurement unit is composed of a source follower circuit, which is used to read the output signal of the charge sensitive preamplifier unit to obtain the amplitude information of the charge signal to be identified.

5. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, wherein: The discrimination unit includes a high threshold comparator and a low threshold comparator; The high threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set high threshold, obtain the slow arrival time identification signal of the charge signal to be identified; The low threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and obtains a fast arrival time identification signal of the charge signal to be identified after comparing the amplified signal with the set low threshold.

6. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, wherein: The time measurement unit includes an enable logic circuit, a multiplexer circuit, a radiation-resistant counter, a latch, a time-to-amplitude converter, a transmission gate circuit, a digital buffer circuit, and a source follower circuit; Taking the total arrival time identification signal and the external input STOP signal as input, the output of the enable logic circuit is connected to the enable terminal of the multiplexer circuit through the transmission gate, and the output of the multiplexer circuit is connected to the input terminal of the radiation hardening counter; The rising edge of the lowest bit output of the radiation-resistant counter is latched by the latch, and the latch signal passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The output of the enable logic circuit also passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The total arrival time identification signal output by the integrated identification unit serves as the control signal of the NMOS switch of the time-to-amplitude converter, and also passes through a first-stage inverter as the reset signal of the time-to-amplitude converter. A charging and discharging capacitor is connected in parallel, and the PMOS controlled by an external DC level serves as the current source of the time-to-amplitude converter.

7. A method for using the multi-dimensional measurement pixel structure for charged particle detection according to any one of claims 1 to 6, characterized in that: include: Acquiring a charge signal to be identified through a charge collection unit; Inputting the charge signal to be identified into the charge-sensitive preamplifier unit for amplification processing to obtain an amplified signal of the charge signal to be identified; The amplified signal is input into the energy measurement unit to obtain the amplitude information of the charge signal to be identified; The amplified signal is input to the identification unit to obtain a fast or slow arrival time identification signal of the charge signal to be identified; Inputting the fast and slow arrival time identification signals of the plurality of pixel units into the comprehensive identification unit to obtain the total arrival time identification signal and identification information of the charge signal to be identified; The total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified.

8. The method of use according to claim 7, wherein: The charge collection unit adopts a charge collection diode or a top metal layer collection unit to collect the charge signal of the charged particles incident on the pixel unit to obtain the charge signal to be identified.

9. The method of use according to claim 7, wherein: The total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified, including: Through the transmission gate circuit, the radiation-hardened counter and the time-to-amplitude converter working mode or the time-to-amplitude converter working mode is selected; The received total arrival time identification signal and the external input STOP signal are processed into a counting enable signal of the radiation-resistant counter through an enabling logic circuit; The received count enable signal is input into the radiation hardened counter through the multiplexer; Through the radiation-resistant counter, under the control of the counting enable signal, the coarse arrival time count is obtained; The first rising edge of the lowest bit output of the radiation hardened counter is latched through the latch; Through the time-to-amplitude converter, under the joint control of the received latch signal and the total arrival time identification signal, fine time counting is completed; The received coarse arrival time count is read out through a digital buffer circuit to obtain coarse arrival time information; The received fine time count is read out through the source follower circuit to obtain the fine arrival time information.

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