Method for improving development uniformity of packaging substrate and development spraying structure

Abstract

The invention discloses a method for improving the development uniformity of a packaging substrate and a development spraying structure, and the method comprises the steps: S1, providing a substrate, and coating the surface of the substrate with a dry film layer; s2, the substrate attached with the dry film layer is developed, a developing processing section is provided with a plurality of first spraying pipes and a plurality of second spraying pipes which are arranged in parallel in the vertical direction, each first spraying pipe is provided with N nozzles, and each second spraying pipe is provided with N-1 nozzles; when the front end of the substrate is conveyed to the half position of the developing processing section, developing point testing is carried out; s3, taking out the substrate after the development point test, placing the substrate in a half position of the development processing section, and calculating the development points of the substrate respectively; s4, calculating a difference value m between the D1 and the D2, and if m is greater than 5%, executing the step S41; if m is smaller than or equal to 5%, debugging is completed, and the preset spraying density is formed in the developing treatment section; and S41, adjusting the nozzle, and returning to execute the steps S1 to S4 after each adjustment is completed. The method can solve the problem that in the prior art, the packaging substrate is not uniform in the vertical developing process.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to a method for improving the development uniformity of a packaging substrate and a development spray structure. Background Art

[0002] In recent years, the booming development of technologies such as AI, 5G and big data has led to a sharp increase in market demand for high-performance CPUs (central processing units), GPUs (graphics processing units), FPGAs (field programmable gate arrays), and ASICs (application-specific integrated circuits) for network routers / converters. The production capacity of large-size FCBGA (flip chip ball grid array packaging format) packaging substrates is in short supply. In the packaging substrate, for the build-up layer (build-up layer), high line density and small line width and line spacing are a major challenge for the SAP process (semi-additive process). For the vertical development line, due to the existence of the water flow effect, when the development point of the upper half of the board surface (the part facing up during development) reaches 50%, the development point of the lower half of the board surface is often at 25%; that is, while ensuring that the development point of the upper half of the board surface is normally developed within 40%-60%, the lower half of the board surface is often over-developed, resulting in defects such as line short circuits and protrusions.

[0003] In the related art, the problem of developing uniformity is improved by adjusting the upper and lower pressure difference of vertical developing, but it is still impossible to adjust the upper and lower developing points to a basically consistent state, and if the upper and lower developing pressures differ too much, it will cause problems with line width uniformity, and the problem of developing unevenness cannot be fundamentally improved. Therefore, a method for improving the upper and lower developing differences in the vertical developing process is urgently needed. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems in the above-mentioned technology to a certain extent. To this end, the purpose of the present invention is to provide a method for improving the uniformity of the development of the package substrate and a development spray structure to solve the problem of uneven top and bottom of the package substrate during vertical development in the prior art.

[0005] To achieve the above object, the first aspect of the present invention provides a debugging method for improving the development uniformity of a packaging substrate, which comprises the following steps:

[0006] S1. providing a substrate, wherein a dry film layer is coated on the surface of the substrate;

[0007] S2, placing the substrate with the dry film layer attached thereto into a developing section from a plate loading machine of a vertical developing device for developing, wherein the developing section has a plurality of first nozzles and a plurality of second nozzles arranged in parallel along a vertical direction, wherein the first nozzle has N nozzles, and the second nozzle has N-1 nozzles, and the plurality of first nozzles and the plurality of second nozzles are arranged alternately from top to bottom; when the front end of the substrate is transferred to a half position of the developing section, a developing point test is performed;

[0008] S3, taking out the substrate after the development point test and placing it in the half position of the development treatment section, respectively calculating the development point D1 of the upper half and the development point D2 of the lower half of the substrate, the development point D (%) = the distance between the copper exposure point and the starting point of the development section / the length of the entire development section × 100%;

[0009] S4, calculating the phase difference m between D1 and D2, if m>5%, executing step S41; if m≤5%, the debugging is completed, so that the development treatment section forms a preset spray density;

[0010] S41, closing part of the nozzles of the second nozzle and part of the nozzles of the first nozzle from bottom to top, and returning to step S1 to step S4 after each adjustment is completed, until m≤5%.

[0011] According to a debugging method for improving the development uniformity of a packaging substrate of the present invention, the debugging method places a substrate coated with a dry film layer in a vertical development device for a development point test, controls the amount of liquid sprayed by the nozzle of each nozzle according to the actual board surface result of the development point test, and continues to perform the development point test; judges whether to continue to adjust according to the test result after each adjustment, and forms a preset spray density after the adjustment, so that the development processing section can ensure that the reaction between the upper and lower parts of the packaging substrate and the developer during the vertical development of the dry film is basically consistent; and facilitates the control of development parameters.

[0012] In addition, the debugging method for improving the development uniformity of the packaging substrate proposed in the present invention may also have the following additional technical features:

[0013] Optionally, in step S2, the extension direction of the first nozzle and the extension direction of the second nozzle are both inclined at an angle of 15° relative to the horizontal direction.

[0014] Further, in step S41, each time the adjustment is performed, the nozzle at the upper inclined end of the nozzle is closed preferentially.

[0015] Optionally, in step S2, the nozzles on the first nozzle pipe and the nozzles on the second nozzle pipe are arranged alternately along the extension direction of the nozzles.

[0016] Optionally, in step S2, the developing pressure of each of the first nozzles is the same as the developing pressure of each of the second nozzles.

[0017] Furthermore, the developing pressure is 1.0 kfg / cm 2 .

[0018] Optionally, in step S2, the movement speed of the substrate relative to the development treatment section is 2.5 m / min, the flow rate of the developer is 70 L / min, the concentration of the developer is 1%, and the temperature of the developer is 30°C.

[0019] Optionally, the distances between adjacent first nozzles and second nozzles are equal.

[0020] Optionally, the distance between two adjacent nozzles on each of the first nozzle pipes and each of the second nozzle pipes is equal.

[0021] Optionally, in step S2, the developing point test is to close the developing spray of the developing treatment section and keep the substrate being conveyed until it is conveyed out of the developing treatment section.

[0022] Optionally, in step S41, if D2 is greater than 60%, the nozzle of the first nozzle and the nozzle of the second nozzle corresponding to the underdeveloped lower half of the substrate are adjusted from closed to open.

[0023] To achieve the above-mentioned purpose, the second aspect of the present invention proposes a developing spray structure, which is arranged in the developing processing section of a vertical developing device, including a plurality of first nozzles and a plurality of second nozzles arranged in parallel along the vertical direction, the first nozzle having N nozzles, the second nozzle having N-1 nozzles, the plurality of first nozzles and the plurality of second nozzles are arranged alternately from top to bottom, and the nozzles of the plurality of first nozzles and the plurality of second nozzles start spraying the developing liquid or close spraying the developing liquid according to the preset spray density formed by the above-mentioned debugging method for improving the developing uniformity of the packaging substrate.

[0024] According to the developing spray structure of the present invention, the upper and lower uniformity of the packaging substrate in vertical developing can be ensured; the risk of abnormal product line width uniformity caused by improving the developing point by adjusting the pressure difference between the upper and lower nozzles in the vertical developing section can be effectively avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic flow chart of a debugging method for improving the development uniformity of a packaging substrate according to an embodiment of the present invention;

[0026] Figure 2 It is a schematic diagram of the main structure of the developing spray structure before adjustment of Example 1 of the present invention;

[0027] Figure 3The test result of the substrate developing point before the developing spray structure of Example 1 of the present invention is adjusted;

[0028] Figure 4 The test result of the substrate developing point after the developing spray structure of Example 1 of the present invention is adjusted for the first time;

[0029] Figure 5 The test result of the substrate development point after the development spray structure of Example 1 of the present invention is adjusted for the second time;

[0030] Figure 6 This is a schematic diagram of the main structure of the developing spray structure after the second adjustment of Example 1 of the present invention;

[0031] Figure 7 The test results of substrate developing points of the developing spray structure of the comparative example of the present invention with developing pressure adjusted;

[0032] Figure 8 This is a physical picture of a vertical developing tank according to an embodiment of the present invention. DETAILED DESCRIPTION

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0034] In order to better understand the above technical solution, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0035] Please refer to Figure 1 The present application provides a debugging method for improving the development uniformity of a packaging substrate, comprising the following steps:

[0036] S1. Provide a substrate, wherein a dry film layer is coated on the surface of the substrate; wherein the dry film layer may be adhered with a PET protective film.

[0037] S2. Place the substrate with the dry film layer in the developing section from the loading machine of the vertical developing device for development. The PET protective film on the surface of the dry film layer can be torn off before loading. The developing section has a plurality of first nozzles and a plurality of second nozzles arranged in parallel along the vertical direction. The first nozzle has N nozzles, and the second nozzle has N-1 nozzles. The plurality of first nozzles and the plurality of second nozzles are arranged alternately from top to bottom. When the front end of the substrate is transferred to the halfway position of the developing section, a developing point test is performed. When the substrate is sent to the developing section, the nozzles of the first nozzle and the second nozzle are opened to spray the developing solution to spray the substrate. When the front end of the substrate (relative to the Figure 2 When the substrate is transferred to the middle of the developing section (the lower end of the substrate), click the "developing point test" of the vertical developing device. At this time, the vertical developing device will close the nozzle of the first nozzle and the nozzle of the second nozzle, so that the developer will not be sprayed onto the substrate, and the substrate will still be transferred to the vertical developing device. The vertical developing device is an existing device and will not be described in detail here.

[0038] S3, taking out the substrate after the development point test and placing it in the half position of the development treatment section, respectively calculating the development point D1 of the upper half and the development point D2 of the lower half of the substrate, the development point D (%) = the distance between the copper exposure point and the starting point of the development section / the length of the entire development section × 100%;

[0039] S4, calculating the phase difference m between D1 and D2, if m>5%, executing step S41; if m≤5%, the debugging is completed, so that the development treatment section forms a preset spray density;

[0040] S41, closing part of the nozzles of the second nozzle and part of the nozzles of the first nozzle from bottom to top, and returning to step S1 to step S4 after each adjustment is completed, until m≤5%.

[0041] Wherein, in step S41, if D2 is greater than 60%, the nozzle of the first nozzle pipe and the nozzle of the second nozzle pipe corresponding to the underdeveloped lower half of the substrate are adjusted from closed to open.

[0042] In this way, according to the actual board surface results of the development point test, when the board surface is underdeveloped, the nozzle can be opened at the corresponding nozzle position to ensure sufficient development. Similarly, the nozzle can be blocked at the position where the development is excessive to avoid excessive development.

[0043] It can be seen that the method places the substrate coated with the dry film layer in the vertical developing device for developing point test, controls the amount of liquid sprayed by the nozzle of each nozzle according to the actual board surface result of the developing point test, and continues to perform the developing point test; judges whether to continue to adjust according to the test result after each adjustment, and forms a preset spray density after the adjustment, so that the developing treatment section can ensure that the reaction between the upper and lower parts of the packaging substrate and the developer is basically consistent during the vertical development of the dry film; and facilitates the control of the developing parameters.

[0044] Example 1

[0045] Please refer to Figure 2 In this embodiment, the development process section adopts Figure 2 The developing spray structure shown includes three first nozzles 100 and three second nozzles 200 arranged in parallel in a vertical direction, and the three first nozzles 100 and the three second nozzles 200 are arranged on a spray rack 300; the first nozzle 100 has 7 nozzles, the second nozzle 200 has 6 nozzles, and the three first nozzles 100 and the three second nozzles 200 are arranged alternately from top to bottom, that is, the number of nozzles of the developing spray structure is arranged in the manner of 7, 6, 7, 6, 7, 6 from top to bottom.

[0046] More specifically, the extension direction of the first nozzle 100 and the extension direction of the second nozzle 200 of the developer spray structure are both inclined at an angle of 15° relative to the horizontal direction. Figure 2 As shown, the first nozzle 100 and the second nozzle 200 are inclined downward from left to right.

[0047] More specifically, the nozzles on the first nozzle 100 and the nozzles on the second nozzle 200 are arranged alternately along the extending direction of the nozzles. Figure 2 As shown, the nozzle of the second nozzle pipe 200 is located between two adjacent nozzles of the adjacent first nozzle pipe 100 .

[0048] Furthermore, the distances between adjacent first nozzles 100 and second nozzles 200 are equal; and the distances between two adjacent nozzles on each first nozzle 100 and each second nozzle 200 are equal.

[0049] In addition, in this embodiment, the developing pressure of each nozzle is 1.0 kfg / cm 2 The movement speed of the substrate relative to the development treatment section is 2.5 m / min, the flow rate of the developer is 70 L / min, the concentration of the developer is 1%, and the temperature of the developer is 30°C.

[0050] The following combination Figures 3 to 6 The debugging methods for improving the uniformity of the development of the packaging substrate are further introduced, including:

[0051] First, step S1 is performed to provide a substrate, and a dry film layer is coated on the surface of the substrate. The dry film material of this embodiment is RD1225 dry film, and other dry film materials such as RY5125, RD3025, etc. are also applicable.

[0052] Next, step S2 is performed to place the substrate with the dry film layer in the developing section from the vertical developing device. At this time, the nozzles of the three first nozzles 100 and the nozzles of the three second nozzles 200 are all opened to spray the developing solution. When the front end of the substrate is transferred to the halfway position of the developing section (such as Figure 8 As shown), perform a developing point test, that is, click on the "developing point test" of the vertical developing device. At this time, the vertical developing device will close the nozzles of the three first nozzles 100 and the nozzles of the three second nozzles 200, so that the developer will not be sprayed onto the substrate, and the substrate will still be transported to and from the vertical developing device.

[0053] Then, step S3 is performed, the substrate after the development point test is taken out and placed in the half position of the development treatment section, and the development point D1 of the upper half and the development point D2 of the lower half of the substrate are calculated respectively, and the development point D (%) = the distance between the copper exposure point and the starting point of the development section / the length of the entire development section × 100%. In this embodiment, the length of the entire development section is 210 cm, and the substrate results of the development point test are as follows: Figure 3 As shown, the developing points D1 of the upper half of the board surface of the substrate are 70%, while the developing points D1 of the lower half of the board surface are only 30%.

[0054] Next, step S4 is executed to calculate the phase difference m between D1 and D2 to be 40%. The difference between the upper and lower development points is as high as 40%, which will either lead to insufficient development of the upper half of the board surface or excessive development of the lower part of the board surface in the actual production process. Therefore, it is necessary to adjust and optimize the upper and lower uniformity of the development points based on this result.

[0055] Therefore, step S41 is executed to close part of the nozzles of the second nozzle 200 and part of the nozzles of the first nozzle 100 from bottom to top, and after each adjustment is completed, the process returns to step S1 to step S4. Figure 3 The board surface condition of the developing point test is determined by keeping the pressure of each nozzle in the developing treatment section consistent. The three nozzles (i.e. Figure 2 The nozzles of the second nozzle 200, the first nozzle 100 and the second nozzle 200 from bottom to top are partially blocked, and the three nozzles at the back of each nozzle are kept open. This adjustment relies on the water flow effect. When the substrate just enters the development treatment section, the lower half of the board surface is first developed by the developer flowing from top to bottom, and then developed by the spray at the back to ensure the uniformity of the development from top to bottom. Keep the development pressure of each nozzle at 1.0kfg / cm 2In the case of Figure 2 The developing nozzles are adjusted from 7, 6, 7, 6, 7, 6 to 7, 6, 7, 4, 4, 3, and then steps S1 to S4 are performed to perform the developing point test of the substrate after the first adjustment. The substrate result of the developing point test after the first adjustment is as follows: Figure 4 As shown, the developing point D1 of the upper half of the substrate surface is 40%, while the developing point D1 of the lower half of the substrate surface is 50%. There is still a difference of about 10% in the developing uniformity between the upper and lower parts. In order to ensure good developing uniformity, fine-tuning can be performed on this basis.

[0056] Therefore, step S41 is then executed to close part of the nozzles of the second nozzle 200 and part of the nozzles of the first nozzle 100 from bottom to top, and after each adjustment is completed, the process returns to step S1 to step S4. Figure 4 On the basis of the adjusted developing nozzles, the developing nozzles are adjusted from 7, 6, 7, 4, 4, 3 to 7, 6, 7, 3, 3, 3, and then steps S1 to S4 are performed to perform a developing point test on the substrate after the second adjustment. The substrate result of the developing point test after the second adjustment is as follows: Figure 5 As shown in FIG. 1 , the developing point D1 of the upper half of the board surface of the substrate is 50%, while the developing point D1 of the lower half of the board surface is 50%. There is basically no difference in the developing uniformity between the upper and lower parts, and the adjustment ends here. The number of nozzles of the developing spray structure after such adjustment is arranged in the manner of 7, 6, 7, 3, 3, 3 from top to bottom, as shown in FIG. Figure 6 As shown, a preset spray density of the dry film material is formed.

[0057] Therefore, the debugging method of this embodiment can better improve the problem of upper and lower development uniformity differences of the vertical development device.

[0058] Comparative Example

[0059] In this comparative example, the development treatment section adopts Figure 2 The developing spray structure shown includes three first nozzles 100 and three second nozzles 200 arranged in parallel in a vertical direction, and the three first nozzles 100 and the three second nozzles 200 are arranged on a spray rack 300; the first nozzle 100 has 7 nozzles, the second nozzle 200 has 6 nozzles, and the three first nozzles 100 and the three second nozzles 200 are arranged alternately from top to bottom, that is, the number of nozzles of the developing spray structure is arranged in the manner of 7, 6, 7, 6, 7, 6 from top to bottom.

[0060] More specifically, the extension direction of the first nozzle 100 and the extension direction of the second nozzle 200 of the developer spray structure are both inclined at an angle of 15° relative to the horizontal direction. Figure 2 As shown, the first nozzle 100 and the second nozzle 200 are inclined downward from left to right.

[0061] More specifically, the nozzles on the first nozzle 100 and the nozzles on the second nozzle 200 are arranged alternately along the extending direction of the nozzles. Figure 2 As shown, the nozzle of the second nozzle pipe 200 is located between two adjacent nozzles of the adjacent first nozzle pipe 100 .

[0062] Furthermore, the distances between adjacent first nozzles 100 and second nozzles 200 are equal; and the distances between two adjacent nozzles on each first nozzle 100 and each second nozzle 200 are equal.

[0063] In addition, in this comparative example, the six nozzles are grouped to set the pressure, and the nozzle pressure of the developing treatment section is set to 1.3 kfg / cm from top to bottom. 2 (first nozzle), 1.3kfg / cm 2 (Second nozzle), 0.8kfg / cm 2 (first nozzle), 0.8kfg / cm 2 (Second nozzle), 0.7kfg / cm 2 (first nozzle), 0.7kfg / cm 2 (second nozzle), the movement speed of the substrate relative to the developing treatment section is 2.5m / min, the flow rate of the developer is 70L / min, the concentration of the developer is 1%, and the temperature of the developer is 30°C, and steps S1 to S4 of Example 1 are carried out.

[0064] The development point test results are as follows Figure 7 As shown, the developing point D1 of the upper half of the board surface of the substrate is 45%, while the developing point D1 of the lower half of the board surface is 60%. There are still some differences between the upper and lower parts of the board surface. If the pressure difference between the upper and lower nozzles continues to increase, it will cause problems with line width uniformity. Therefore, the problem of upper and lower developing point differences caused by the water flow effect cannot be completely eliminated by only adjusting the pressure difference between the upper and lower nozzles.

[0065] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0066] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0067] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0068] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0069] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily being directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0070] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A debugging method for improving the development uniformity of a packaging substrate, characterized in that: The following steps are involved: S1. providing a substrate, wherein a dry film layer is coated on the surface of the substrate; S2, placing the substrate with the dry film layer attached thereto into a developing section from a plate loading machine of a vertical developing device for developing, wherein the developing section has a plurality of first nozzles and a plurality of second nozzles arranged in parallel along a vertical direction, wherein the first nozzle has N nozzles, and the second nozzle has N-1 nozzles, and the plurality of first nozzles and the plurality of second nozzles are arranged alternately from top to bottom; when the front end of the substrate is transferred to a half position of the developing section, a developing point test is performed; S3, taking out the substrate after the development point test and placing it in the half position of the development treatment section, respectively calculating the development point D1 of the upper half and the development point D2 of the lower half of the substrate, the development point D (%) = the distance between the copper exposure point and the starting point of the development section / the length of the entire development section × 100%; S4, calculate the phase difference m between D1 and D2, if m>5%, execute step S41; If m≤5%, the debugging is completed, so that the development treatment section forms a preset spray density; S41, closing part of the nozzles of the second nozzle and part of the nozzles of the first nozzle from bottom to top, and returning to step S1 to step S4 after each adjustment is completed, until m≤5%.

2. The debugging method according to claim 1, characterized in that: In step S2, the extending direction of the first nozzle and the extending direction of the second nozzle are both inclined at an angle of 15° relative to the horizontal direction.

3. The debugging method according to claim 2, characterized in that: Step S41, each time the adjustment is performed, the nozzle at the upper inclined end of the nozzle pipe is closed first.

4. The debugging method according to claim 1, characterized in that: In step S2, the nozzles on the first nozzle pipe and the nozzles on the second nozzle pipe are arranged alternately along the extension direction of the nozzles.

5. The debugging method according to claim 1, characterized in that: In step S2, the developing pressure of each of the first nozzles is the same as the developing pressure of each of the second nozzles.

6. The debugging method according to claim 5, characterized in that: The developing pressure is 1.0 kfg / cm 2 .

7. The debugging method according to claim 1, characterized in that: In step S2, the movement speed of the substrate relative to the developing treatment section is 2.5 m / min, the flow rate of the developer is 70 L / min, the concentration of the developer is 1%, and the temperature of the developer is 30°C.

8. The debugging method according to claim 1, characterized in that: The distances between adjacent first nozzles and second nozzles are equal; and the distances between two adjacent nozzles on each of the first nozzles and each of the second nozzles are equal.

9. The debugging method according to claim 1, characterized in that: In step S2, the developing point test is to close the developing spray of the developing treatment section and keep the substrate being conveyed until it is conveyed out of the developing treatment section.

10. The debugging method according to claim 1, characterized in that: In step S41, if D2 is greater than 60%, the nozzle of the first nozzle and the nozzle of the second nozzle corresponding to the underdeveloped lower half of the substrate are adjusted from closed to open.

11. A developing spray structure, arranged in a developing processing section of a vertical developing device, comprising a plurality of first nozzles and a plurality of second nozzles arranged in parallel in a vertical direction, wherein the first nozzle has N nozzles, and the second nozzle has N-1 nozzles, and the plurality of the first nozzles and the plurality of the second nozzles are arranged alternately from top to bottom, characterized in that: The nozzles of the plurality of first nozzles and the nozzles of the plurality of second nozzles start spraying the developing solution or stop spraying the developing solution according to a preset spray density formed by the debugging method for improving the developing uniformity of the packaging substrate according to any one of claims 1-10.

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