Fault detection method for pressure control device for semiconductor and related product

Abstract

The invention provides a fault detection method for a pressure control device for a semiconductor and a related product, and relates to the technical field of fault detection, and the method comprises the steps: obtaining first fault detection data in response to a first fault detection instruction, and determining whether the pressure control device for the semiconductor has a fault based on the first fault detection data, if the pressure control device for the semiconductor does not have the fault, the semiconductor etching equipment is started, and a second fault detection instruction is generated; and in response to the second fault detection instruction, obtaining second fault detection data, and carrying out real-time fault detection on the pressure control equipment for the semiconductor based on the second fault detection data. According to the invention, the fault detection process of the pressure control device for the semiconductor in the prior art is optimized, and a basis is provided for subsequent fault maintenance of the pressure control device for the semiconductor.

Description

Technical Field

[0001] The present invention relates to the technical field of detection, and in particular to a method, device, electronic equipment and storage medium for detecting faults of a pressure control device for a semiconductor. Background Art

[0002] Among the equipment used in wafer processing and manufacturing, photolithography machines, etcher and thin film deposition equipment are the most core. Usually, more than 1,000 process steps are required to manufacture advanced integrated circuits, of which there can be more than 100 etching steps. In order to etch qualified contact holes or lines, the etcher must have extremely high requirements in terms of processing accuracy, uniformity and repeatability. The intelligent pressure control swing valve is a key component of the etcher and is of great significance to improving the performance of the etcher.

[0003] With regard to the fault detection of the intelligent pressure-controlled swing valve, the existing technology mainly relies on the change of the process chamber pressure in the lithography machine. The fault diagnosis strategy is very chaotic and cannot provide a basis for subsequent equipment maintenance. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a semiconductor pressure control device fault detection method and related products to detect semiconductor pressure control device faults and provide a basis for semiconductor pressure control device fault detection.

[0005] In a first aspect, an embodiment of the present invention provides a method for detecting a fault of a pressure control device for a semiconductor, wherein the pressure control device for a semiconductor is present in a semiconductor etching device, and comprises:

[0006] In response to a first fault detection instruction, first fault detection data is acquired, and based on the first fault detection data, it is determined whether the semiconductor pressure control device has a fault, wherein the first fault detection data: performs a self-test on the semiconductor pressure control device in an initial energized state;

[0007] If there is no fault in the semiconductor pressure control device, the semiconductor etching equipment is started and a second fault detection instruction is generated;

[0008] In response to the second fault detection instruction, second fault detection data is obtained, and real-time fault detection is performed on the pressure control device for the semiconductor based on the second fault detection data, the second fault detection data including: compressed air pressure data, backup voltage data, steady-state data of the semiconductor etching equipment in the current imprinting process, and reciprocating motion data of the pressure control device for the semiconductor.

[0009] In one possible manner, the first fault detection data includes: compressed air pressure data, standby voltage data, and stroke reciprocating motion data of the semiconductor pressure control device in an initial energized state;

[0010] In the step of acquiring first fault detection data in response to the first fault detection instruction, and determining whether the semiconductor pressure control device has a fault based on the first fault detection data:

[0011] If, in the initial energized state of the semiconductor pressure control device, the compressed air pressure data meets the first threshold range, the standby voltage data meets the second threshold range, and the traveling state of the semiconductor pressure control device meets the first preset condition, then there is no fault in the semiconductor pressure control device;

[0012] Otherwise, there is a fault in the pressure control device for semiconductors;

[0013] Among them, the first preset condition is: the round-trip route of the semiconductor pressure control device is the entire journey, and the round-trip time of the semiconductor pressure control device meets the third threshold range, and the travel status of the semiconductor pressure control device is determined based on the reciprocating motion data of the semiconductor pressure control device.

[0014] One possible approach is that the method further includes: if the semiconductor pressure control device has a fault, generating first fault prompt information, wherein the first fault prompt information is used to prompt that the semiconductor pressure control device has a fault in an initial energized state.

[0015] One possible way is that in the step of obtaining second fault detection data in response to the second fault detection instruction, and generating a semiconductor pressure control device for real-time fault detection based on the second fault detection data:

[0016] If the compressed air pressure data of the semiconductor etching device during the current imprinting process meets the fourth threshold range, the standby voltage data meets the fifth threshold range, the running state of the semiconductor pressure control device meets the second preset condition, and the steady-state data meets the third preset condition, then the semiconductor pressure control device currently has no fault;

[0017] Otherwise, the pressure control device for semiconductors is currently faulty;

[0018] The second preset condition is that the trajectory of the semiconductor pressure control device conforms to the preset route, and the travel state of the semiconductor pressure control device is determined based on the reciprocating motion data of the semiconductor pressure control device;

[0019] The third preset condition is that the steady-state accuracy, the steady-state overshoot and the rise time all meet the corresponding thresholds;

[0020] One possible way is that the semiconductor pressure control device has a fault. The method further includes:

[0021] Generate second fault prompt information, wherein the second fault prompt information is used to prompt that a fault currently exists in the pressure control device for semiconductor.

[0022] One possible approach is that after the step of generating the second fault prompt information, the method further includes: generating a fault log based on the status data of the semiconductor pressure control device in the current period, and accumulating the number of faults.

[0023] In one possible manner, the method further comprises:

[0024] In response to the fault prompt information, latching the state data of the semiconductor pressure control device in the current period, generating fault troubleshooting auxiliary information based on the state data of the semiconductor pressure control device in the current period, wherein the fault troubleshooting auxiliary information is used to provide the fault problem of the semiconductor pressure control device;

[0025] The fault prompt information includes: one of first fault prompt information and second fault prompt information.

[0026] In a second aspect, the present application provides a semiconductor pressure control device fault detection device, wherein the semiconductor pressure control device is present in a semiconductor etching device, and comprises:

[0027] The first response module is used to respond to a first fault detection instruction, obtain first fault detection data, and determine whether there is a fault in the pressure control device for semiconductors based on the first fault detection data, wherein the first fault detection data is used to perform self-inspection on the pressure control device for semiconductors in an initial energized state.

[0028] A generating module: used for starting the semiconductor etching equipment and generating a second fault detection instruction if there is no fault in the semiconductor pressure control device;

[0029] The second response module is used to respond to the second fault detection instruction, obtain the second fault detection data, and generate a semiconductor pressure control device for real-time fault detection based on the second fault detection data, wherein the second fault detection data includes: the compressed air pressure data, backup voltage data, steady-state data of the semiconductor etching equipment in the current imprinting process, and the reciprocating motion data of the semiconductor pressure control device.

[0030] In a third aspect, the present application provides an electronic device, including:

[0031] at least one processor; and

[0032] at least one memory in communication with the processor, wherein:

[0033] The memory stores program instructions executable by the processor, and the processor calls the program instructions to execute any method described in the first aspect.

[0034] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer instructions, and the computer instructions enable the computer to execute the method described in the first aspect.

[0035] The present application performs real-time detection of pressure control devices for semiconductors through steady-state data, optimizes the fault diagnosis strategy of lithography machines, and provides a complete logic for fault detection of pressure control devices for semiconductors, thereby providing a basis for subsequent equipment maintenance.

[0036] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0037] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 A structural diagram of a semiconductor etching device provided in the prior art;

[0040] Figure 2 A flow chart of a method for detecting a fault in a semiconductor pressure control device provided in an embodiment of the present application;

[0041] Figure 3 A flow chart of a fault self-checking method for a semiconductor pressure control device provided in an embodiment of the present application;

[0042] Figure 4 A flow chart of another method for detecting a fault of a pressure control device for a semiconductor provided in an embodiment of the present application;

[0043] Figure 5A structural diagram of a fault detection device for a semiconductor pressure control device provided in an embodiment of the present application;

[0044] Figure 6 This is a structural diagram of the electronic device provided for this application.

[0045] Icons: 101—process chamber; 102—intelligent pressure control swing valve; 103—molecular pump; 104—chamber pressure detection device; 105 valve controller; 106—etching machine controller; 107—inlet valve; 108—gas supply device. DETAILED DESCRIPTION

[0046] In order to better understand the technical solution of the embodiment of the present invention, the embodiment of the present invention is described in detail below with reference to the accompanying drawings.

[0047] It should be clear that the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments in the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the embodiments of the present invention.

[0048] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the embodiments of the present invention. The singular forms "a", "said" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0049] Among the equipment used in wafer processing and manufacturing, photolithography machines, etcher and thin film deposition equipment are the most core. Usually, more than 1,000 process steps are required to manufacture advanced integrated circuits, of which there can be more than 100 etching steps. In order to etch qualified contact holes or lines, the etcher must have extremely high requirements in terms of processing accuracy, uniformity and repeatability. The intelligent pressure control swing valve is a key component of the etcher and is of great significance to improving the performance of the etcher.

[0050] With regard to the fault detection of the intelligent pressure-controlled swing valve, the existing technology mainly relies on the change of the process chamber pressure in the lithography machine. The fault diagnosis strategy is very chaotic and cannot provide a basis for subsequent equipment maintenance.

[0051] In view of this, the present application provides a fault detection method, device, electronic device and storage medium for a pressure control device for semiconductors, so as to detect the fault of the intelligent pressure control swing valve in the lithography machine and provide a basis for the maintenance of the intelligent pressure control swing valve.

[0052] In order to facilitate the understanding of the technical solution of this application, the terms involved in this application are first explained:

[0053] Semiconductor etching equipment: an etcher removes part of the material surface by chemical or physical methods to form the desired pattern or structure. Specifically, the role of the etcher is to etch tiny grooves and trenches on the surface of semiconductors for the manufacture of microelectronic devices. These grooves and trenches constitute the electronic components inside the chip, such as transistors, capacitors and resistors.

[0054] Combination Figure 1 It can be seen that the semiconductor etching equipment provided in the present application includes: a process chamber 101, an intelligent pressure control swing valve 102, a molecular pump 103, a chamber pressure detection device 104, a valve controller 105, an etcher whole machine controller 106, an air intake valve 107 and a gas supply device 108.

[0055] Specifically, the molecular pump 103 is connected to the process chamber 101 through the intelligent pressure control swing valve 102 to evacuate the process chamber 101. The gas supply device 108 inputs the process gas into the process chamber 101 to etch the semiconductor.

[0056] The chamber pressure detection device 104 detects the pressure in the process chamber 101 and transmits it to the etcher controller 106 through the valve controller 105 to control the intelligent pressure control swing valve 102. When the pressure control operation of the process chamber 101 is performed, the etcher controller 106 controls the intelligent pressure control valve 102 to different openings through the valve controller 105 based on the valve control parameters, thereby adjusting the speed of vacuuming.

[0057] Pressure control device for semiconductors: corresponds to the aforementioned intelligent pressure control swing valve 102, which is specifically used to form a vacuum environment in the process chamber of the lithography equipment, and will not be described in detail here.

[0058] Based on the foregoing, a fault detection method for a pressure control device for semiconductors provided in the present application is described below.

[0059] Please refer to Figure 2 The embodiment of the present application provides a method for detecting a fault of a pressure control device for a semiconductor, wherein the pressure control device for a semiconductor is present in a semiconductor etching device, and specifically comprises the following steps:

[0060] S101: In response to a first fault detection instruction, first fault detection data is acquired, and whether a semiconductor pressure control device has a fault is determined based on the first fault detection data.

[0061] It should be noted that the first fault detection data is used to perform a self-check on the semiconductor pressure control device in an initial energized state.

[0062] Specifically, in the embodiment provided in the present application, the first fault detection data includes: compressed air pressure data of the semiconductor pressure control device in an initial energized state, backup voltage data, and reciprocating motion data of the semiconductor pressure control device.

[0063] Specifically, the compressed air pressure data corresponds to the pressure data of the process chamber, and the standby voltage data is a unique signal, generally a voltage signal, which is specifically used to provide an additional standby power supply for the intelligent pressure control swing valve 102 when the power supply of the intelligent pressure control swing valve 102 fails. Whether the standby voltage fails is determined by detecting the standby voltage data. The reciprocating motion data of the conductor pressure control device corresponds to the motion data of the intelligent pressure control swing valve.

[0064] When all indicators in the first fault detection data correspond to the conditions, it is considered that the pressure control device for semiconductor is in a normal state. At this time, the semiconductor etching equipment meets the start-up conditions. Otherwise, it does not meet the start-up conditions.

[0065] More specifically, if the semiconductor pressure control device is initially energized, the compressed air pressure data meets the first threshold range, the standby voltage data meets the second threshold range, and the traveling state of the semiconductor pressure control device meets the first preset condition, then there is no fault in the semiconductor pressure control device; otherwise, there is a fault.

[0066] Among them, the first preset condition is: the round-trip route of the semiconductor pressure control device is the entire journey, and the round-trip time of the semiconductor pressure control device meets the third threshold range, and the travel status of the semiconductor pressure control device is determined based on the reciprocating motion data of the semiconductor pressure control device.

[0067] Combination Figure 1 As shown, the pressure control device for semiconductors is specifically an intelligent pressure control swing valve. The intelligent pressure control swing valve specifically involves whether the intelligent pressure control swing valve can move along a specified route, whether it can complete the entire movement, etc. Specific technical personnel in this field can set it as needed and no limitation is made here.

[0068] Here, the first threshold range is the normal range of compressed air pressure data of the semiconductor etching equipment in the initial powered state, and the second threshold range is the normal range of standby voltage data of the semiconductor etching equipment in the initial powered state.

[0069] At the same time, if there is a fault in the pressure control device for semiconductors, a first fault detection instruction is generated, and a first fault prompt information is generated. The first fault prompt information is used to prompt that there is a fault in the pressure control device for semiconductors in the initial energized state.

[0070] S102: If there is no fault in the semiconductor pressure control device, the semiconductor etching equipment is started and a second fault detection instruction is generated.

[0071] On the basis of the aforementioned step S101, the self-check of the semiconductor pressure control device has been completed. At this time, the semiconductor etching equipment starts to start and generates a second fault detection instruction to monitor the semiconductor pressure control device in real time.

[0072] S103: In response to the second fault detection instruction, obtain second fault detection data, and generate a semiconductor pressure control device based on the second fault detection data to perform real-time fault detection.

[0073] Specifically, the second fault detection data includes: compressed air pressure data, standby voltage data, steady-state data of the semiconductor etching equipment in the current imprinting process, and reciprocating motion data of the semiconductor pressure control device.

[0074] It should be noted, however, that since the semiconductor etching equipment is in the current imprinting process, the semiconductor pressure control device needs to control the pressure inside the aforementioned process chamber 101, therefore, the semiconductor etching equipment in the current imprinting process corresponds to the pressure control process of the semiconductor pressure control device.

[0075] Combined with the above description of the semiconductor etching equipment, the compressed air pressure data corresponds to the pressure data of the process chamber, and the steady-state data corresponds to the steady-state accuracy, steady-state overshoot and rise time of the process chamber when reaching a steady state.

[0076] Furthermore, if the compressed air pressure data of the semiconductor etching equipment during the current imprinting process meets the fourth threshold range, the standby voltage data meets the fifth threshold range, the moving state of the semiconductor pressure control device meets the second preset condition, and the steady-state data meets the third preset condition, then there is currently no fault in the semiconductor pressure control equipment.

[0077] Otherwise, the semiconductor pressure control device is currently faulty.

[0078] It can be understood that the second fault prompt information is used to prompt that the pressure control device for semiconductors currently has a fault.

[0079] The second preset condition is that the pressure control device for semiconductors moves along a specified route, that is, the intelligent pressure control swing valve moves along a specified route.

[0080] It should be noted that the traveling state of the semiconductor pressure control device is specifically the traveling state of the intelligent pressure control swing valve, which is determined based on the reciprocating motion data of the semiconductor pressure control device, that is, the reciprocating motion data of the intelligent pressure control swing valve.

[0081] The third preset condition is that the steady-state accuracy, steady-state overshoot and rise time of the semiconductor etching equipment when reaching a steady state all meet corresponding thresholds.

[0082] Specifically, the overshoot is calculated using the following formula:

[0083]

[0084] P i —Steady-state value of process chamber pressure of semiconductor etching equipment during the current imprint process;

[0085] P t —The maximum pressure of the process chamber of the semiconductor etching equipment during the current imprint process;

[0086] Rise time: specifically, the time required for the semiconductor etching equipment to go from the initial state to the preset value of the process chamber pressure during the current imprint process.

[0087] Assuming that there are n sampling points in the current imprinting process of a semiconductor etching device, the following formula is used to calculate the steady-state accuracy:

[0088] ε=k(E(x)+D(x));

[0089] ε—steady-state accuracy;

[0090] E(x)—the expected value of the process chamber pressure corresponding to n sampling points in the current imprint process of the semiconductor etching equipment;

[0091] D(x)—the variance value of the process chamber pressure corresponding to n sampling points in the current imprint process of the semiconductor etching equipment;

[0092] k—coefficient.

[0093] Here, the fourth threshold range is the normal range of compressed air pressure data of the semiconductor etching equipment during the current imprinting process, and the fifth threshold range is the normal range of standby voltage data of the semiconductor etching equipment during the current imprinting process.

[0094] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0095] The following is an explanation of the specific steps of determining whether a semiconductor pressure control device has a fault during the self-test process of this application:

[0096] Combined with the above, it can be seen that during the self-test process, it is necessary to determine:

[0097] 1. Whether the compressed air pressure data of the semiconductor pressure control device meets the first threshold range when it is initially powered on.

[0098] 2. Whether the standby voltage data of the semiconductor pressure control device meets the second threshold range when it is initially powered on.

[0099] 3. When the semiconductor etching equipment is in an initially energized state, whether the traveling state of the semiconductor pressure control device meets the first preset condition.

[0100] In some embodiments, it can be determined simultaneously whether the compressed air pressure data meets the first threshold range, whether the standby voltage data meets the second threshold range, and whether the semiconductor pressure control device travel state meets the first preset condition.

[0101] Reference Figure 3 In some other embodiments, there is a sequence for determining whether the compressed air pressure data meets the first threshold range, whether the standby voltage data meets the second threshold range, and whether the traveling state of the semiconductor pressure control device meets the first preset condition.

[0102] Exemplarily, assuming that the compressed air pressure data meets the first threshold range, it is determined whether the standby voltage data meets the second threshold range. If so, it is further determined whether the running state of the semiconductor pressure control device meets the first preset condition.

[0103] In the above embodiment, assuming that the compressed air pressure data does not meet the first threshold range, it is not necessary to obtain the backup voltage data and the reciprocating motion data of the semiconductor pressure control device. At this time, the backup voltage data is deemed to be inconsistent with the second threshold range, and the reciprocating motion data of the semiconductor pressure control device is deemed to be inconsistent with the first preset condition.

[0104] That is to say, assuming that due to the judgment sequence of self-check, a data indicator of the first fault detection data is missing and the startup cannot be completed, in this situation, it also conforms to the judgment logic that if, when the semiconductor pressure control device is initially energized, the compressed air pressure data meets the first threshold range, the standby voltage data meets the second threshold range, and the running state of the semiconductor pressure control device meets the first preset condition, then there is no fault in the semiconductor pressure control device.

[0105] It can be seen from this that in the embodiment provided in the present application, in order to perform real-time monitoring of the pressure control device for semiconductors, it is necessary to extract in advance the compressed air pressure data, backup voltage data, steady-state data, and reciprocating motion data of the pressure control device for semiconductors of a pressure control process to generate second fault detection data.

[0106] In combination with the above, it can be seen that based on different detection scenarios, when a fault occurs in the pressure control device for semiconductors, corresponding fault prompt information will appear. Specifically, when a fault occurs in the pressure control device for semiconductors during self-test, a first fault prompt information will be generated. When a fault occurs in the pressure control device for semiconductors during real-time monitoring, a second fault prompt information will be generated.

[0107] Reference Figure 4 When fault prompt information is generated (specifically, one of the first fault prompt information or the second fault prompt information), in response to the fault prompt information, the status data of the pressure control device for semiconductors in the current period is latched, and fault repair auxiliary information is generated based on the status data of the pressure control device for semiconductors in the current period. The fault repair auxiliary information is used to provide fault problems of the pressure control device for semiconductors.

[0108] Here, the status data of the pressure control equipment for semiconductors includes: the current position of the valve plate of the intelligent pressure control swing valve, control parameters, the current pressure of the process chamber, the backup power supply voltage, the control mode of the pressure control equipment for semiconductors, and at least one of fault codes.

[0109] At the same time, the pressure control device for semiconductors generates a fault log based on the status data of the pressure control device for semiconductors in the current period and accumulates the number of faults.

[0110] Through the above method, a basis can be provided for troubleshooting of semiconductor pressure control devices. The control system in semiconductor etching equipment can modify control parameters based on latched data. Control parameters include but are not limited to: gain, sensor delay, ramp time, and generally give prompts to reduce gain and increase ramp time, and give specific values ​​for user reference. Users can modify them appropriately based on their own experience. At the same time, the statistics of the number of faults can help commissioning personnel to take countermeasures for frequent valve problems, and users can also review the fault log.

[0111] Reference Figure 5 The present application provides a semiconductor pressure control device fault detection device, the semiconductor pressure control device is present in a semiconductor etching device, and includes:

[0112] A first response module: used to respond to a first fault detection instruction, obtain first fault detection data, and determine whether the semiconductor pressure control device has a fault based on the first fault detection data, wherein the first fault detection data is used to perform a self-test on the semiconductor pressure control device in an initial energized state;

[0113] A generating module: used for starting the semiconductor etching equipment and generating a second fault detection instruction if there is no fault in the semiconductor pressure control device;

[0114] The second response module is used to respond to the second fault detection instruction, obtain the second fault detection data, and generate a semiconductor pressure control device for real-time fault detection based on the second fault detection data. The second fault detection data includes: compressed air pressure data of the semiconductor etching equipment in the current imprinting process, backup voltage data, steady-state data, and reciprocating motion data of the semiconductor pressure control device.

[0115] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system and device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0116] The flow charts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the system, method and computer program product according to multiple embodiments of the present invention. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0117] Figure 6 A block diagram of an exemplary electronic device suitable for implementing an exemplary embodiment of the present invention is shown. Figure 6 The electronic device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present invention.

[0118] like Figure 6 As shown, the electronic device is in the form of a general-purpose computing device. The components of the electronic device may include, but are not limited to: one or more processors 410, memory 430, and a communication bus 440 connecting different system components (including memory 430 and processing unit 410).

[0119] The communication bus 440 represents one or more of several types of bus structures, including a memory bus or memory controller, a peripheral bus, a graphics acceleration port, a processor or a local bus using any of a variety of bus structures. For example, these architectures include but are not limited to Industry Standard Architecture (ISA) bus, Micro Channel Architecture (MAC) bus, Enhanced ISA bus, Video Electronics Standards Association (VESA) local bus and Peripheral Component Interconnection (PCI) bus.

[0120] Electronic devices typically include a variety of computer system readable media. These media can be any available media that can be accessed by the electronic device, including volatile and non-volatile media, removable and non-removable media.

[0121] The memory 430 may include a computer system readable medium in the form of a volatile memory, such as a random access memory (RAM) and / or a cache memory. The electronic device may further include other removable / non-removable, volatile / non-volatile computer system storage media. The memory 430 may include at least one program product having a set (e.g., at least one) of program modules configured to perform the functions of various embodiments of the present invention.

[0122] A program / utility having a set (at least one) of program modules may be stored in memory 430, such program modules including, but not limited to, an operating system, one or more application programs, other program modules, and program data, each of which or some combination may include an implementation of a network environment. The program modules generally perform the functions and / or methods of the embodiments described in the embodiments of the present invention.

[0123] The processor 410 executes various functional applications and data processing by running the programs stored in the memory 430, such as implementing the embodiments of the present invention. Figure 2 to Figure 4 The illustrated embodiment provides a method for detecting failure of a pressure control device for a semiconductor.

[0124] An embodiment of the present invention provides a non-transitory computer-readable storage medium, wherein the non-transitory computer-readable storage medium stores computer instructions, wherein the computer instructions enable the computer to execute an embodiment of the present invention. Figure 1 to Figure 3 The illustrated embodiment provides a method for detecting failure of a pressure control device for a semiconductor.

[0125] The above-mentioned computer-readable storage medium can adopt any combination of one or more computer-readable media. The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable storage medium can be, for example, - but not limited to - an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples (non-exhaustive list) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ReadOnly Memory; hereinafter referred to as: ROM), an erasable programmable read-only memory (Erasable Programmable ReadOnly Memory; hereinafter referred to as: EPROM) or flash memory, optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this document, a computer-readable storage medium can be any tangible medium containing or storing a program, which can be used by an instruction execution system, device or device or used in combination with it.

[0126] Computer-readable signal media may include a data signal propagated in baseband or as part of a carrier wave, which carries a computer-readable program code. Such propagated data signals may take a variety of forms, including, but not limited to, electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than a computer-readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0127] Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wireline, optical fiber cable, RF, etc., or any suitable combination of the foregoing.

[0128] The computer program code for performing the operation of the embodiments of the present invention can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any type of network, including a local area network (Local Area Network; hereinafter referred to as: LAN) or a wide area network (Wide Area Network; hereinafter referred to as: WAN), or can be connected to an external computer (for example, using an Internet service provider to connect through the Internet).

[0129] The above describes specific embodiments of the present invention. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0130] In the description of the embodiments of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In the embodiments of the present invention, the schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in the embodiments of the present invention and the features of the different embodiments or examples, without contradiction.

[0131] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the embodiments of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0132] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or more executable instructions for implementing the steps of a custom logical function or process, and the scope of the preferred implementation of the embodiments of the present invention includes alternative implementations in which functions may not be performed in the order shown or discussed, including performing functions in a substantially simultaneous manner or in reverse order depending on the functions involved, which should be understood by technicians in the technical field to which the embodiments of the present invention belong.

[0133] The word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0134] It should be noted that the terminals involved in the embodiments of the present invention may include but are not limited to personal computers (Personal Computer; hereinafter referred to as: PC), personal digital assistants (Personal Digital Assistant; hereinafter referred to as: PDA), wireless handheld devices, tablet computers (Tablet Computer), mobile phones, MP3 players, MP4 players, etc.

[0135] In the several embodiments provided in the embodiments of the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0136] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0137] The above-mentioned integrated unit implemented in the form of a software functional unit can be stored in a computer-readable storage medium. The above-mentioned software functional unit is stored in a storage medium, including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor (Processor) to perform some steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory; hereinafter referred to as: ROM), random access memory (Random Access Memory; hereinafter referred to as: RAM), disk or optical disk and other media that can store program codes.

[0138] The above description is only a preferred embodiment of the embodiment of the present invention and is not intended to limit the embodiment of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiment of the present invention should be included in the scope of protection of the embodiment of the present invention.

Claims

1. A method for detecting a fault in a semiconductor pressure control device, wherein the semiconductor pressure control device is present in a semiconductor etching device, characterized in that: include: In response to a first fault detection instruction, first fault detection data is acquired, and based on the first fault detection data, it is determined whether the semiconductor pressure control device has a fault, wherein the first fault detection data is used to perform a self-test on the semiconductor pressure control device in an initial energized state; If there is no fault in the semiconductor pressure control device, the semiconductor etching equipment is started and a second fault detection instruction is generated; In response to the second fault detection instruction, second fault detection data is obtained, and real-time fault detection is performed on the pressure control device for the semiconductor based on the second fault detection data, the second fault detection data including: compressed air pressure data, backup voltage data, steady-state data of the semiconductor etching equipment in the current imprinting process, and reciprocating motion data of the pressure control device for the semiconductor.

2. The method according to claim 1, characterized in that The first fault detection data includes: compressed air pressure data of the semiconductor pressure control device in an initial energized state, standby voltage data, and stroke reciprocating motion data of the semiconductor pressure control device; In the step of acquiring first fault detection data in response to the first fault detection instruction, and determining whether the semiconductor pressure control device has a fault based on the first fault detection data: If, in the initial energized state of the semiconductor pressure control device, the compressed air pressure data meets the first threshold range, the standby voltage data meets the second threshold range, and the traveling state of the semiconductor pressure control device meets the first preset condition, then there is no fault in the semiconductor pressure control device; Otherwise, there is a fault in the pressure control device for semiconductors; Among them, the first preset condition is: the round-trip route of the semiconductor pressure control device is the entire journey, and the round-trip time of the semiconductor pressure control device meets the third threshold range, and the travel status of the semiconductor pressure control device is determined based on the reciprocating motion data of the semiconductor pressure control device.

3. The method according to claim 2, characterized in that The method further includes: if the semiconductor pressure control device has a fault, generating first fault prompt information, wherein the first fault prompt information is used to prompt that the semiconductor pressure control device has a fault in an initial energized state.

4. The method according to claim 3, characterized in that In the step of acquiring second fault detection data in response to the second fault detection instruction, and generating a semiconductor pressure control device for real-time fault detection based on the second fault detection data: If the compressed air pressure data of the semiconductor etching device during the current imprinting process meets the fourth threshold range, the standby voltage data meets the fifth threshold range, the running state of the semiconductor pressure control device meets the second preset condition, and the steady-state data meets the third preset condition, then the semiconductor pressure control device currently has no fault; Otherwise, the pressure control device for semiconductors is currently faulty; The second preset condition is that the trajectory of the semiconductor pressure control device conforms to the preset route, and the travel state of the semiconductor pressure control device is determined based on the reciprocating motion data of the semiconductor pressure control device; The third preset condition is that the steady-state accuracy, the steady-state overshoot and the rise time all meet the corresponding thresholds.

5. The method according to claim 4, characterized in that The semiconductor pressure control device has a fault, and the method further comprises: Generate second fault prompt information, wherein the second fault prompt information is used to prompt that a fault currently exists in the pressure control device for semiconductor.

6. The method according to claim 5, characterized in that After the step of generating the second fault prompt information, the method further includes: generating a fault log based on the status data of the semiconductor pressure control device in the current period, and accumulating the number of faults.

7. The method according to claim 5, characterized in that The method further comprises: In response to the fault prompt information, latching the state data of the semiconductor pressure control device in the current period, generating fault troubleshooting auxiliary information based on the state data of the semiconductor pressure control device in the current period, wherein the fault troubleshooting auxiliary information is used to provide the fault problem of the semiconductor pressure control device; The fault prompt information includes: one of first fault prompt information and second fault prompt information.

8. A semiconductor pressure control device failure detection device, wherein the semiconductor pressure control device is present in a semiconductor etching device, characterized in that: include: A first response module: used to respond to a first fault detection instruction, obtain first fault detection data, and determine whether the semiconductor pressure control device has a fault based on the first fault detection data, wherein the first fault detection data is used to perform a self-test on the semiconductor pressure control device in an initial powered state of the semiconductor etching equipment; A generating module: used for starting the semiconductor etching equipment and generating a second fault detection instruction if there is no fault in the semiconductor pressure control device; The second response module is used to respond to the second fault detection instruction, obtain the second fault detection data, and generate a semiconductor pressure control device for real-time fault detection based on the second fault detection data, wherein the second fault detection data includes: the compressed air pressure data, backup voltage data, steady-state data of the semiconductor etching equipment in the current imprinting process, and the reciprocating motion data of the semiconductor pressure control device.

9. An electronic device, characterized in that: include: at least one processor; as well as at least one memory in communication with the processor, wherein: The memory stores program instructions executable by the processor, and the processor can execute the method according to any one of claims 1 to 7 by calling the program instructions.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions enable the computer to execute the method according to any one of claims 1 to 7.

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