Current-carrying and conductive control method and device for trench structure for local breakdown management

Abstract

The present invention discloses a method and device for controlling current-carrying conduction of a groove structure for local breakdown management, and relates to the field related to semiconductor manufacturing. The method includes: analyzing the electric field distribution of semiconductor devices, identifying electric field concentration structures, high current density areas, and weak dielectric positions; mining local breakdown risk characteristics; matching the groove structure configurations of each position partition based on risk characteristics, and establishing a matching feature space; searching and combining the groove structure, fitting the structural parameters to each position partition, and evaluating the matching degree of the structure function and the current-carrying conduction function; screening the groove structure, and integrating it into the semiconductor device for current-carrying conduction control. The method solves the technical problem that it is difficult to effectively prevent the local breakdown phenomenon in the existing groove structure current-carrying conduction control for local breakdown management, resulting in low reliability of the current-carrying conduction performance of the device, and achieves the technical effect of reducing the risk of local breakdown and improving the current-carrying conduction performance of the device.

Description

Technical Field

[0001] The present application relates to the field related to semiconductor manufacturing, and in particular to a method and device for controlling current carrying and conduction of a trench structure for local breakdown management. Background Art

[0002] In the field of semiconductor device design and manufacturing, electric field distribution, current density and dielectric strength are key factors affecting device performance and reliability. With the continuous development of semiconductor technology, higher and higher requirements are placed on the current-carrying and conductive control capabilities of devices. Especially in high-voltage and high-power density application scenarios, how to effectively manage the electric field distribution and reduce the risk of local breakdown has become a key challenge to improving device performance. Traditionally, the design of semiconductor devices relies on the experience of engineers and lacks systematic theoretical guidance, making it difficult to achieve accurate management of the electric field distribution of semiconductor devices and effective control of local breakdown risks.

[0003] In the current related technologies, the current-carrying and conductive control of the trench structure for local breakdown management has the technical problem of being difficult to effectively prevent the local breakdown phenomenon, resulting in low reliability of the current-carrying and conductive performance of the device. Summary of the invention

[0004] The present application provides a method and device for controlling current-carrying conduction of a groove structure for local breakdown management, analyzes the electric field distribution of semiconductor devices, identifies electric field concentration structures, high current density areas and weak dielectric positions, and based on the electric field distribution analysis results, explores the local breakdown risk characteristics of each position partition, configures a suitable groove structure for each position partition according to the risk characteristics, establishes a matching feature space, searches and combines the groove structures in the matching feature space, and evaluates their structural function matching and current-carrying conduction function matching. The optimal groove structure is selected according to the matching evaluation results, and is integrated into the semiconductor device for current-carrying conduction control and other technical means, thereby achieving the technical effect of reducing the local breakdown risk and improving the current-carrying conduction performance of the device through precise management of the electric field distribution of the semiconductor device.

[0005] The present application provides a current-carrying and conductive control method for a groove structure for local breakdown management, including: performing electric field distribution analysis on a semiconductor device to identify an electric field concentration structure, a high current density region, and a weak dielectric position; performing local breakdown risk feature mining based on the electric field concentration structure, the high current density region, and the weak dielectric position to obtain risk features for each position partition; performing groove structure configuration matching for each position partition of the electric field concentration structure, the high current density region, and the weak dielectric position based on the risk features to establish a matching feature space; performing a groove structure search combination in the matching feature space, and fitting the structural parameters of the search combination to each position partition to evaluate the structural function matching and the current-carrying and conductive function matching; screening the groove structure according to the matching evaluation results, and integrating it into the semiconductor device for current-carrying and conductive control.

[0006] In a possible implementation, local breakdown risk characteristics are mined based on the electric field concentration structure, high current density area, and weak dielectric position to obtain risk characteristics of each position partition, and the following processing is performed: the electric field threshold of the structural material of the semiconductor device is obtained, and the correspondence between the electric field concentration structure, high current density area, weak dielectric position and the electric field threshold is established; based on the electric field threshold of the weak dielectric position, the risk characteristics of the weak dielectric position partition are determined; the electric field distribution gradient and current density value of the electric field concentration structure and the high current density area are calculated, and the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined in combination with the corresponding electric field threshold.

[0007] In a possible implementation, the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined in combination with the corresponding electric field threshold, and the following processing is performed: based on the distribution relationship of the electric field threshold of the structural material, local breakdown cases of the same family are obtained, and the local breakdown cases of the same family include local breakdown accident samples that match the electric field threshold distribution; the local breakdown cases of the same family are divided into samples according to the accident attributes of the electric field concentration structure and the high current density area, and an electric field concentration sample set and a high current density sample set are constructed; the electric field distribution gradient and the high current density value time series characteristics are fitted according to the electric field concentration sample set and the high current density sample set, respectively, to obtain the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition.

[0008] In a possible implementation, before establishing the matching feature space, the following processing is performed: the physical structure of the semiconductor device is identified, and the grid granularity of the physical structure is set according to the electric field concentration structure, high current density area, each position risk zone of the weak medium position and other areas, wherein the grid granularity setting is related to the risk characteristics of each position risk zone, and the grid granularity of other areas is larger than the grid granularity of the position risk zone, the semiconductor device is structurally simulated by a simulation tool to construct a simulation space; a groove feature element matching module and a groove feature optimization module are built into the simulation space, the groove feature element matching module includes a groove feature element library and an element matching combination module, wherein the groove feature element library includes all elements constituting the groove structure, the element matching combination module is used to perform element matching search in the groove feature element library according to the input features, and the groove feature optimization module is used to optimize the current-carrying conduction strategy of the semiconductor device groove according to the groove feature elements of the groove feature element matching module.

[0009] In a possible implementation, based on the risk characteristics, the groove structure configuration is matched for each position partition of the electric field concentration structure, the high current density area, and the weak medium position, a matching feature space is established, and the following processing is performed: according to the correspondence between the risk characteristics and the position partition, the physical structure coordinates are located, and the compensating current-carrying conductive parameters are determined according to the risk characteristics; the physical structure positioning coordinates and the compensating current-carrying conductive parameters are used as input features and input into the simulation space, and the structural features are extracted according to the physical structure positioning coordinates, and the structural features and the compensating current-carrying conductive parameters are used as constraint indexes to search for physical features, structural features, and target functional features in the groove feature element library to obtain matching feature elements for each position partition, wherein the physical features include electric field strength, current density, temperature, and material electric field threshold, the structural features include groove shape, size, depth, spacing, material, and insulation type, and the target functional features include electric field uniformity, current shunting, and current blocking; the matching feature elements are associated with the position partition mapping to construct the matching feature space.

[0010] In a possible implementation, a groove structure search combination is performed in the matching feature space, and the structural parameters of the search combination are fitted to the respective position partitions, and the structural function matching and the current-carrying and conductive function matching are evaluated, and the following processing is performed: the functional constraint parameters of the semiconductor device in each position partition are obtained, and the penalty conditions are configured according to the functional constraint parameters; the compensation current-carrying and conductive parameters are taken as the target, the spatial size constraints are determined according to the structural characteristics, and an evaluation function is constructed in combination with the penalty conditions; two groove structure parameter combinations are randomly selected in the matching feature space, and the randomly selected groove structure parameter combinations are evaluated using the evaluation function, and the combination with the largest evaluation result is used as the search starting point, and the search direction and the search step length are determined according to the difference between the two groups of groove structure parameter combinations; the search starting point, the search direction, and the search step length are imported into the groove feature optimization module for searching until the evaluation result reaches the target value or the search number is reached, and the current optimal combination of groove feature elements is obtained; the current-carrying and conductive simulation of the semiconductor device is performed in the simulation space using the current optimal combination of the groove feature elements, and the structural function matching and the current-carrying and conductive function matching are evaluated with the compensation current-carrying and conductive parameters as the target.

[0011] In a possible implementation, the search starting point, search direction, and search step length are imported into the groove feature optimization module for search, and the following processing is also performed: the search step length is equally divided to obtain an equally divided step length and an initial step length; a combined search is performed according to the equally divided step length and the initial step length, and the search combination is evaluated through an evaluation function, and the step length is evaluated according to the difference in the evaluation results, and the search step length is adjusted according to the difference in the step length and the difference in the evaluation results; according to the search step length adjustment amount, step length optimization is performed, and the search step length with the largest probability of evaluation increment is determined to reset the search step length.

[0012] The present application also provides a groove structure current-carrying and conductive control device for local breakdown management, including: an electric field distribution analysis module, the electric field distribution analysis module is used to perform electric field distribution analysis on semiconductor devices, and identify electric field concentration structures, high current density areas, and weak dielectric positions; a local breakdown risk feature mining module, the local breakdown risk feature mining module is used to perform local breakdown risk feature mining based on the electric field concentration structure, high current density area, and weak dielectric position, and obtain risk characteristics of each position partition; a groove structure configuration matching module, the groove structure configuration matching module is used to perform groove structure configuration matching on each position partition of the electric field concentration structure, high current density area, and weak dielectric position based on the risk characteristics, and establish a matching feature space; a groove structure search and combination module, the groove structure search and combination module is used to perform groove structure search and combination in the matching feature space, and fit the structural parameters of the search combination to the each position partition, and perform structural function matching and current-carrying and conductive function matching evaluation; a groove structure integration module, the groove structure integration module is used to screen the groove structure according to the matching evaluation result, and integrate it into the semiconductor device for current-carrying and conductive control.

[0013] The method and device for controlling current-carrying and conductive conduction of a groove structure for local breakdown management proposed in this application first analyzes the electric field distribution of the semiconductor device to identify the electric field concentration structure, high current density area, and weak dielectric position, and then mines the local breakdown risk characteristics according to the electric field concentration structure, high current density area, and weak dielectric position to obtain the risk characteristics of each position partition, and then matches the groove structure configuration of each position partition of the electric field concentration structure, high current density area, and weak dielectric position based on the risk characteristics to establish a matching feature space, and then searches for and combines the groove structure in the matching feature space, and fits the structural parameters of the search combination to each position partition, and evaluates the structural function matching and the current-carrying and conductive function matching, and finally selects the groove structure according to the matching evaluation results and integrates it into the semiconductor device for current-carrying and conductive control, thereby achieving the technical effect of reducing the local breakdown risk and improving the current-carrying and conductive performance of the device through precise management of the electric field distribution of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the accompanying drawings of the embodiment of the present invention will be briefly introduced below. A flow chart is used in the present application to illustrate the operations performed by the device according to the embodiment of the present application. It should be understood that the previous or following operations are not necessarily performed precisely in order. On the contrary, various steps can be processed in reverse order or simultaneously as needed. At the same time, other operations can also be added to these processes, or one or more operations can be removed from these processes.

[0015] Figure 1A schematic flow chart of a method for controlling current-carrying and conductive conduction in a trench structure for local breakdown management provided in an embodiment of the present application.

[0016] Figure 2 A schematic structural diagram of a groove structure current-carrying and conductive control device for local breakdown management provided in an embodiment of the present application.

[0017] Explanation of the reference numerals: electric field distribution analysis module 10 , local breakdown risk feature mining module 20 , groove structure configuration matching module 30 , groove structure search and combination module 40 , groove structure integration module 50 . DETAILED DESCRIPTION

[0018] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below.

[0019] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. The described embodiments should not be regarded as limiting the present application. All other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0020] In the following description, reference is made to "some embodiments", which describe a subset of all possible embodiments, but it is understood that "some embodiments" may be the same subset or different subsets of all possible embodiments, and may be combined with each other without conflict. The terms "including" and "having" and any variations are intended to cover non-exclusive inclusions. For example, a process, method, device, product, or server that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or modules that are not clearly listed or inherent to these processes, methods, products, or devices. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field of this application. The terms used herein are for the purpose of describing the embodiments of the present application only.

[0021] The present application embodiment provides a method for controlling the current carrying and conducting of a trench structure for local breakdown management, such as Figure 1 As shown, the method includes:

[0022] Step S100, performing electric field distribution analysis on the semiconductor device to identify electric field concentration structures, high current density areas, and weak dielectric locations.

[0023] Specifically, the electric field distribution of semiconductor devices is analyzed using electric field simulation software (such as ANSYS, COMSOL, etc.) or experimental test equipment. For example, by inputting the structural parameters (such as size, material, doping concentration, etc.) and working environment parameters (such as voltage, current, etc.) of the semiconductor device, the simulation software can calculate the electric field distribution inside the device and generate an electric field distribution map. Alternatively, the electric field distribution of the device is directly measured through specific test equipment, such as an electric field strength meter, and the electric field strength data is recorded. Among them, the electric field concentration structure refers to the area with high electric field intensity inside the semiconductor device, which appears at the corners, tips or defects of the device. The high current density area refers to the area with high current density inside the semiconductor device, corresponding to the electric field concentration structure. The weak dielectric position refers to the area with poor material properties or defects inside the semiconductor device, which is prone to breakdown.

[0024] Step S200, mining the local breakdown risk characteristics according to the electric field concentration structure, the high current density area, and the weak dielectric position to obtain the risk characteristics of each position partition.

[0025] Specifically, the specific location and range of electric field concentration structures, high current density areas, and weak dielectric locations are identified using electric field simulation results or experimental measurement results. The breakdown risk of these areas is assessed based on the breakdown voltage and electric field strength threshold of the semiconductor material (the maximum electric field strength that the material can withstand under specific conditions, exceeding this value may cause breakdown). The assessment results are expressed in the form of risk characteristics, such as risk level, breakdown probability, etc.

[0026] In a possible implementation, local breakdown risk feature mining is performed according to the electric field concentration structure, high current density area, and weak dielectric position to obtain the risk features of each position partition, and step S200 further includes step S210, obtaining the electric field threshold of the structural material of the semiconductor device, and establishing the correspondence between the electric field concentration structure, high current density area, weak dielectric position and the electric field threshold. Specifically, all material types (such as silicon, silicon dioxide, metal, etc.) and their structures (such as PN junction, metal oxide semiconductor, etc.) used in the semiconductor device are determined. The relevant material manual or database is consulted to obtain the electric field threshold of each material under different conditions. If the required data is not provided in the manual or database, an experimental test is performed. The semiconductor device is placed in a test environment, the voltage is gradually increased, and the electric field strength and current density are monitored at the same time until a breakdown occurs, and the electric field strength at the time of breakdown is recorded as the electric field threshold. A correspondence table or mapping relationship between the electric field concentration structure, high current density area, weak dielectric position and the electric field threshold is established.

[0027] Step S220, determining the risk characteristics of the weak medium position partition according to the electric field threshold of the weak medium position. Specifically, extract the actual electric field strength of the weak medium position from the electric field distribution analysis result. Compare the actual electric field strength with the electric field threshold obtained in step S210. Determine the risk characteristics of the weak medium position according to the comparison result. If the actual electric field strength is close to or exceeds the electric field threshold, the risk characteristic is high; if the actual electric field strength is much lower than the electric field threshold, the risk characteristic is low.

[0028] Step S230, the electric field distribution gradient and current density value of the electric field concentration structure and the high current density area are calculated, and the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined in combination with the corresponding electric field threshold. Specifically, the electric field strength distribution and current density value of the electric field concentration structure and the high current density area are extracted from the electric field distribution analysis results. The electric field distribution gradient of the electric field concentration structure and the high current density area is calculated, that is, the rate of change of the electric field intensity with the position. The electric field distribution gradient and the current density value are compared with the electric field threshold obtained in step S210. According to the comparison result, the risk characteristics of the electric field concentration partition and the high current density partition are determined. If the electric field distribution gradient is large, the current density value is high and is close to or exceeds the electric field threshold, the risk characteristic is high; otherwise, the risk characteristic is low. Local breakdown is one of the main causes of failure of semiconductor devices. The electric field concentration structure, the high current density area and the weak dielectric position are areas with a high risk of local breakdown. This implementation method accurately assesses the risk of local breakdown by obtaining the electric field threshold of these areas and comparing it with the actual electric field strength and current density, thereby improving the comprehensiveness and accuracy of risk assessment, and providing strong support for the subsequent design and optimization of the trench structure, thereby achieving more effective current-carrying and conduction control.

[0029] In a possible implementation, the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined in combination with the corresponding electric field threshold, and step S230 further includes step S231, based on the distribution relationship of the electric field threshold of the structural material, obtaining local breakdown family cases, and the local breakdown family cases include local breakdown accident samples that match the electric field threshold distribution. Specifically, access a semiconductor device failure database, which contains the structural material information, electric field threshold data, and historical local breakdown accident records of the device. According to the electric field concentration structure and high current density area of ​​the current semiconductor device, and their corresponding electric field thresholds, query conditions are set. Execute a database query to retrieve local breakdown accident samples that match the electric field threshold distribution, and these samples are local breakdown family cases. Perform a similarity assessment on the retrieved cases to ensure that they have sufficient similarity with the current device in terms of electric field distribution, material type, etc., so as to perform effective risk feature extraction.

[0030] Step S232, divide the local breakdown cases of the same family into samples according to the accident attributes of the electric field concentration structure and the high current density area, and construct an electric field concentration sample set and a high current density sample set. Specifically, each local breakdown case of the same family is analyzed in detail to determine the specific accident attributes (such as position, shape, size, etc.) of its electric field concentration structure and high current density area. Based on these accident attributes, the cases of the same family are divided into an electric field concentration sample set and a high current density sample set. For example, all cases involving electric field concentration structures are classified into an electric field concentration sample set, and all cases involving high current density areas are classified into a high current density sample set.

[0031] Step S233, according to the electric field concentration sample set and the high current density sample set, respectively, the electric field distribution gradient and the high current density value time series feature fitting are performed to obtain the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition. Specifically, for each case in the electric field concentration sample set, the electric field distribution gradient data is extracted, and the time series analysis method is used for fitting to obtain the risk characteristics of the electric field concentration partition, including the trend and rate of the electric field gradient change. For each case in the high current density sample set, the high current density value data is extracted, and the time series analysis method is also used for fitting to obtain the risk characteristics of the high current density partition, including the amplitude and frequency of the current density change. This implementation method more accurately extracts the risk characteristics of the electric field concentration structure and the high current density area by introducing local breakdown homologous cases and time series feature fitting technology, thereby improving the accuracy and pertinence of the local breakdown risk feature extraction.

[0032] Step S300, based on the risk characteristics, groove structure configuration matching is performed on each position partition of the electric field concentration structure, the high current density area, and the weak dielectric position to establish a matching feature space.

[0033] Specifically, based on the risk characteristics of electric field concentration structures, high current density areas, and weak dielectric locations, appropriate groove shapes, sizes, and locations are selected for each location partition to optimize the electric field distribution, reduce breakdown risks, and establish a matching feature space for subsequent search and optimization.

[0034] In a possible implementation, before establishing the matching feature space, it further includes step S600, identifying the physical structure of the semiconductor device, and setting the grid granularity of the physical structure according to the electric field concentration structure, high current density area, weak medium position risk partition and other areas, wherein the grid granularity setting is related to the risk characteristics of each position risk partition, and the grid granularity of other areas is larger than the grid granularity of the position risk partition, and the semiconductor device is structurally simulated by a simulation tool to construct a simulation space.

[0035] Specifically, a three-dimensional model or two-dimensional drawing of a semiconductor device is imported using computer-aided design (CAD) software or semiconductor device design software to identify its physical structure, including its geometric shape, material distribution, etc. According to the results of the electric field analysis, key areas such as electric field concentration structures, high current density areas, and weak dielectric locations are determined. According to the risk characteristics of risk partitions such as electric field concentration structures, high current density areas, and weak dielectric locations, as well as the requirements for computing resources and accuracy, the physical structure of the semiconductor device is meshed and the mesh granularity of different areas is set. The mesh granularity refers to the size and shape of each mesh unit when a continuous physical structure is divided into discrete grids. The size of the mesh granularity affects the accuracy and amount of calculation of the simulation results. Among them, areas with higher risks (such as electric field concentration structures and high current density areas) require more detailed mesh divisions (i.e., smaller mesh granularity) to more accurately capture changes in electric fields and currents; areas with lower risks use larger mesh granularity to reduce the amount of calculation. Use simulation tools (such as finite element analysis software) to perform structural simulation of semiconductor devices, and construct simulation space according to the set mesh granularity.

[0036] Step S700, a groove feature element matching module and a groove feature optimization module are built into the simulation space, the groove feature element matching module includes a groove feature element library and an element matching combination module, wherein the groove feature element library includes all elements constituting the groove structure, the element matching combination module is used to perform element matching search in the groove feature element library according to the input features, and the groove feature optimization module is used to perform optimization control of the current-carrying conduction strategy of the semiconductor device groove according to the groove feature elements of the groove feature element matching module.

[0037] Specifically, a groove feature element library is established in the groove feature element matching module, which contains all possible groove feature elements (various feature elements constituting the groove structure), such as U-shaped, V-shaped, T-shaped, etc., different sizes, depths, as well as material types and insulation properties. An element matching combination module is constructed in the groove feature element matching module. The element matching combination module is used to implement an element matching combination algorithm, which can search and match appropriate groove feature elements in the element library according to the input risk characteristics and performance requirements to form multiple possible groove structure configurations.

[0038] The groove feature optimization module is used to optimize multiple possible groove structure configurations using optimization algorithms (such as genetic algorithms, etc.). The optimization algorithm can iteratively optimize the groove features according to preset objective functions (such as uniformity of electric field distribution, degree of current density reduction, current-carrying conductivity, etc.). In each iteration, the performance of the current groove structure is evaluated, and the groove features are adjusted according to the evaluation results until the optimal groove structure configuration is found to achieve optimal control of the current-carrying conductivity strategy. This implementation method can more accurately capture the electric field and current changes in key areas by setting different grid granularities according to risk characteristics, thereby improving the accuracy of the simulation. Through the built-in groove feature element matching module and groove feature optimization module, the most suitable groove feature elements can be automatically searched and matched, and the groove structure can be iteratively optimized to achieve the optimal current-carrying conductivity.

[0039] In a possible implementation, the groove structure configuration is matched for each position partition of the electric field concentration structure, the high current density area, and the weak medium position based on the risk characteristics, and a matching feature space is established. Step S300 further includes step S310, locating the physical structure coordinates according to the correspondence between the risk characteristics and the position partitions, and determining the compensating current-carrying conductive parameters according to the risk characteristics. Specifically, according to the results of the electric field distribution analysis, the risk characteristics are matched with the position partitions in the semiconductor device to determine the risk level of each position partition. The specific physical structure coordinates of each position partition are determined using the coordinate system in CAD or semiconductor design software. According to the risk characteristics and the physical structure characteristics of the position partitions, the compensating current-carrying conductive parameters (such as conductivity, resistivity, etc.) required for each position partition are determined by calculating according to empirical formulas or consulting relevant information to improve the electric field distribution and current flow.

[0040] Step S320, taking the physical structure positioning coordinates and the compensating current-carrying conductive parameters as input features, inputting them into the simulation space, extracting structural features according to the physical structure positioning coordinates, taking the structural features and the compensating current-carrying conductive parameters as constraint indexes, searching for physical features, structural features, and target functional features in the groove feature element library, and obtaining matching feature elements for each position partition, wherein the physical features include electric field strength, current density, temperature, and material electric field threshold; the structural features include groove shape, size, depth, spacing, material, and insulation type; and the target functional features include electric field uniformity, current shunting, and current blocking.

[0041] Specifically, the physical structure positioning coordinates and the compensation current-carrying conductive parameters are used as input features and input into the simulation space. According to the physical structure positioning coordinates, the structural features of the corresponding position are extracted from the simulation space. The structural features and the compensation current-carrying conductive parameters are used as constraint indexes to construct search conditions for searching in the trench feature element library. In the trench feature element library, a search is performed according to the constraint index to find matching feature elements that meet the requirements. These elements can meet the requirements of physical features (parameters that describe the physical characteristics of semiconductor devices, such as electric field strength, current density, temperature, and material electric field threshold), structural features (parameters that describe the structural characteristics of semiconductor devices, such as trench shape, size, depth, spacing, material, and insulation type), and target functional features (functional characteristics that the semiconductor device is expected to achieve, such as electric field uniformity, current shunting, and current blocking).

[0042] Step S330, establish the mapping association between the matching feature elements and the position partitions, and construct the matching feature space. Specifically, the matching feature elements of each position partition are associated with the position partition to establish a mapping relationship. The matching feature elements of all position partitions are integrated together to construct a matching feature space. This space contains the groove structure feature information required for all position partitions, which is used to provide a basis for the groove structure search combination and current-carrying conductive control in subsequent steps. This implementation method accurately locates the areas that need to be optimized in the semiconductor device through the correspondence between the risk characteristics and the position partitions, and determines the compensating current-carrying conductive parameters according to the risk characteristics of these areas, thereby improving the accuracy and reliability of the design. Through the search function of the simulation space and the groove feature element library, it is possible to quickly find matching feature elements that meet the requirements, establish a mapping association between the matching feature elements and the position partitions, and construct a matching feature space, which provides convenience for the subsequent groove structure search combination and current-carrying conductive control, and improves the design efficiency.

[0043] Step S400, searching for a groove structure combination in the matching feature space, fitting the structural parameters of the searched combination into each position partition, and evaluating the structural function matching and the current carrying and conducting function matching.

[0044] Specifically, set the parameters of the optimization algorithm, such as population size, number of iterations, crossover probability, mutation probability, etc. Run the optimization algorithm to search for the optimal groove structure combination in the matching feature space. Perform simulation verification on the searched optimal combination to evaluate its structural function matching and current-carrying and conductive function matching. The structural function matching refers to the degree of conformity between the effect of the groove structure in optimizing the electric field distribution and reducing the breakdown risk and the expected goal. The current-carrying and conductive function matching refers to the degree of conformity between the effect of the groove structure in not affecting the current-carrying and conductive performance of the semiconductor device and the expected goal.

[0045] In a possible implementation, a groove structure search combination is performed in the matching feature space, and the structural parameters of the search combination are fitted into the respective position partitions, and the structural function matching degree and the current-carrying and conductive function matching degree are evaluated, and step S400 further includes step S410, obtaining the functional constraint parameters of the semiconductor device in each position partition, and configuring the penalty conditions according to the functional constraint parameters. Specifically, the functional constraint parameters in each position partition are determined according to the design specifications and functional requirements of the semiconductor device. The functional constraint parameters are specific functional requirements that must be met by the semiconductor device during the design and optimization process, such as electric field strength, current strength, etc., and these requirements cannot be changed during the optimization process. For each functional constraint parameter, a corresponding penalty condition is configured, which can be linear, nonlinear, or based on a certain rule. When the design parameters in the optimization process do not meet the functional constraints, a certain penalty is introduced through the penalty condition to ensure that the final design scheme meets all functional requirements.

[0046] Step S420, taking the compensated current-carrying conductive parameter as the target, determining the spatial size constraint according to the structural features, and constructing an evaluation function in combination with the penalty condition. Specifically, the spatial size constraint is determined according to the structural features to ensure that the design of the groove structure is physically feasible. Taking the compensated current-carrying conductive parameter as the target, combining the functional constraint parameters and the penalty condition, an evaluation function is constructed. The evaluation function is a mathematical expression used to quantify the relationship between the design parameters (such as the groove structure parameters) and the target performance (compensated current-carrying conductive parameter), and can introduce a penalty when the functional constraint is not met. The evaluation function is debugged and verified to ensure that it can correctly evaluate the pros and cons of different design schemes.

[0047] Step S430, randomly extract two groove structure parameter combinations in the matching feature space, evaluate the randomly extracted groove structure parameter combinations using the evaluation function, use the combination with the larger evaluation result as the search starting point, and determine the search direction and search step length according to the difference between the two groups of groove structure parameter combinations. Specifically, randomly extract two groove structure parameter combinations in the matching feature space as initial points. Evaluate the two combinations using the evaluation function and compare their results. According to the evaluation results, select the combination with the better evaluation result as the search starting point (the starting point for searching the optimal solution in the matching feature space). According to the difference between the two groups of parameters, calculate the search direction (the vector that guides the search process in the search space towards a better direction) and the search step length (the distance moved each time in the search direction), and the search direction and search step length are used to guide the search process towards a better direction.

[0048] Step S440, import the search starting point, search direction, and search step length into the groove feature optimization module for searching until the evaluation result reaches the target value or the search number is reached, and the current optimal combination of groove feature elements is obtained. Specifically, the search starting point, search direction, and search step length are imported into the groove feature optimization module. The groove feature optimization module uses a search algorithm to search in the matching feature space, and continuously adjusts the groove structure parameter combination to find a better solution. During the search process, the current groove structure parameter combination is continuously evaluated using the evaluation function, and the search direction and step length are adjusted according to the evaluation results. When the evaluation result reaches the target value or the search number reaches the preset value, the search is stopped and the current optimal groove structure parameter combination is output.

[0049] Step S450, using the current optimal combination of the groove characteristic elements to simulate the current carrying and conduction of the semiconductor device in the simulation space, and evaluating the structural function matching and the current carrying and conduction function matching with the goal of compensating the current carrying and conduction parameters. Specifically, using the current optimal groove structure parameter combination to simulate the current carrying and conduction of the semiconductor device in the simulation space. Analyze the simulation results, calculate the structural function matching and the current carrying and conduction function matching. According to the evaluation results, judge whether the current optimal groove structure parameter combination meets the design requirements. If it meets, the optimization process ends; if it does not meet, return to step S420, adjust the evaluation function or search algorithm, and continue to optimize. This implementation method ensures that the final design scheme meets all functional requirements by introducing functional constraint parameters and penalty conditions, and avoids performance degradation or failure caused by improper design. Through simulation and simulation, the design scheme is verified and optimized without manufacturing actual samples, reducing the design cost. By constructing an evaluation function and using a search algorithm, the optimal groove structure parameter combination can be efficiently found in the matching feature space, improving the design efficiency.

[0050] In a possible implementation, the search starting point, search direction, and search step length are imported into the groove feature optimization module for searching, and step S400 further includes step S460, which divides the search step length equally to obtain an equal step length and an initial step length. Specifically, the search step length is divided into several equal parts, each of which is called an equal step length, which is used to explore the impact of different step lengths on the optimization results in more detail during the search process. An initial search step length is set as the starting point of the search. The selection of the initial step length is based on experience or experimentation to ensure that the search process is neither too slow nor misses important optimization points.

[0051] Step S470, perform combined searches according to the evenly divided step length and the initial step length, evaluate the search combination through an evaluation function, evaluate the step length according to the difference in the evaluation results, and adjust the search step length according to the difference in the step length and the difference in the evaluation results. Specifically, multiple search paths are generated according to different combinations of evenly divided step lengths and initial step lengths. For example, multiple search schemes can be generated by crossover (a random combination of evenly divided step lengths and initial step lengths). Search each search path and record the search results. Use the evaluation function to quantitatively evaluate each search result to determine its quality. Determine whether to adjust the step length based on the difference in the evaluation results of the two search combinations. If the evaluation results are significantly improved, it indicates that the current step length may be close to the optimal one; if the difference is small, it is necessary to reduce the step length for a more detailed search. Based on the difference in the evaluation results obtained during the search process, calculate the step length adjustment amount, which is used to dynamically adjust the search step length to improve the search efficiency. For example, the following rule can be used to adjust the step length: △L==η·|F new -F prev |, where △L represents the step length adjustment amount, η is the step length adjustment factor, which is used to control the sensitivity of the step length adjustment, and F new and F prev Represents the results of the current and last evaluation respectively.

[0052] Step S480, according to the search step adjustment amount, the step size is optimized, and the search step size with the largest probability of evaluation increment is determined to reset the search step size. Specifically, by continuously adjusting the step size and evaluating its impact on the optimization result, the search step size with the largest probability of evaluation increment is found, that is, the degree of improvement brought by the step size adjustment is evaluated, and the step size that can provide the maximum gain is selected. The step size is used as the new initial step size or the average step size, the search step size is reset, and the optimization search is continued. This implementation method explores the search space more comprehensively through a combined search of the average step size and the initial step size, avoiding missing important optimization points. At the same time, the step size is dynamically adjusted according to the evaluation difference, further improving the search efficiency. By continuously adjusting the step size and evaluating the optimization results, the optimal search step size can be found, thereby obtaining a better optimization result, achieving the technical effect of improving the search efficiency of the optimization of the groove structure of the semiconductor device and the quality of the optimization results.

[0053] Step S500 , selecting the trench structure according to the matching evaluation result, and integrating it into the semiconductor device for current carrying and conduction control.

[0054] Specifically, the matching evaluation results of different groove structure combinations are compared to select the optimal combination. In the simulation space, the current-carrying conduction simulation of the semiconductor device is performed using the optimal groove structure combination. According to the simulation results, the influence of the groove structure on the electric field distribution and the current-carrying conduction performance is evaluated. If the design requirements are met, the groove structure is integrated into the actual device, that is, according to the requirements of the semiconductor manufacturing process, a semiconductor device containing the optimal groove structure is designed and manufactured, and the performance of the manufactured semiconductor device is tested to verify the effect of the groove structure on the current-carrying conduction control. The embodiment of the present application adopts electric field distribution analysis of semiconductor devices to identify electric field concentration structures, high current density areas and weak dielectric positions, and based on the electric field distribution analysis results, the local breakdown risk characteristics of each position partition are mined, and according to the risk characteristics, a suitable groove structure is configured for each position partition, and a matching feature space is established. The groove structure is searched and combined in the matching feature space, and its structural function matching degree and current-carrying and conductive function matching degree are evaluated. According to the matching evaluation results, the optimal groove structure is selected, and it is integrated into the semiconductor device to perform current-carrying and conductive control and other technical means, thereby achieving the technical effect of reducing the local breakdown risk and improving the current-carrying and conductive performance of the device through precise management of the electric field distribution of the semiconductor device.

[0055] In the above, refer to Figure 1 The present invention describes in detail a method for controlling the current carrying and conducting of a trench structure for local breakdown management according to an embodiment of the present invention. Figure 2 A trench structure current-carrying conductive control device for local breakdown management according to an embodiment of the present invention is described.

[0056] The current-carrying conductive control device for groove structure for local breakdown management according to the embodiment of the present invention is used to solve the technical problem that it is difficult to effectively prevent the local breakdown phenomenon in the existing groove structure current-carrying conductive control for local breakdown management, resulting in low reliability of the current-carrying conductive performance of the device, so as to achieve the technical effect of reducing the local breakdown risk and improving the current-carrying conductive performance of the device through accurate management of the electric field distribution of the semiconductor device. The current-carrying conductive control device for groove structure for local breakdown management includes: an electric field distribution analysis module 10, a local breakdown risk feature mining module 20, a groove structure configuration matching module 30, a groove structure search combination module 40, and a groove structure integration module 50.

[0057] The electric field distribution analysis module 10 is used to perform electric field distribution analysis on semiconductor devices and identify electric field concentration structures, high current density areas, and weak dielectric positions; the local breakdown risk feature mining module 20 is used to perform local breakdown risk feature mining based on the electric field concentration structures, high current density areas, and weak dielectric positions to obtain risk features for each position partition; the groove structure configuration matching module 30 is used to perform groove structure configuration matching for each position partition of the electric field concentration structure, high current density area, and weak dielectric position based on the risk features to establish a matching feature space; the groove structure search and combination module 40 is used to perform groove structure search and combination in the matching feature space, and fit the structural parameters of the search combination to the each position partition, and perform structural function matching and current-carrying and conductive function matching evaluation; the groove structure integration module 50 is used to screen the groove structure according to the matching evaluation results, and integrate it into the semiconductor device for current-carrying and conductive control.

[0058] Below, the specific configuration of the local breakdown risk feature mining module 20 will be described in detail. As described above, the local breakdown risk feature mining is performed according to the electric field concentration structure, high current density area, and weak dielectric position to obtain the risk characteristics of each position partition. The local breakdown risk feature mining module 20 may further include: a structural material electric field threshold acquisition unit is used to obtain the structural material electric field threshold of the semiconductor device, and establish the correspondence between the electric field concentration structure, high current density area, weak dielectric position and the electric field threshold; a weak dielectric position partition risk feature determination unit is used to determine the risk characteristics of the weak dielectric position partition according to the electric field threshold of the weak dielectric position; an electric field concentration partition and high current density partition risk feature determination unit is used to calculate the electric field distribution gradient and current density value of the electric field concentration structure and the high current density area, and determine the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition in combination with the corresponding electric field threshold.

[0059] Among them, in combination with the corresponding electric field threshold, the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined, and the risk characteristics determination unit of the electric field concentration partition and the high current density partition may further include: a local breakdown family case acquisition subunit is used to obtain local breakdown family cases based on the distribution relationship of the electric field threshold of the structural material, and the local breakdown family cases include local breakdown accident samples that match the electric field threshold distribution; a sample division subunit is used to divide the local breakdown family cases into samples according to the accident attributes of the electric field concentration structure and the high current density area, and construct an electric field concentration sample set and a high current density sample set; a timing feature fitting subunit is used to fit the electric field distribution gradient and the high current density value timing characteristics according to the electric field concentration sample set and the high current density sample set, respectively, to obtain the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition.

[0060] Wherein, before establishing the matching feature space, the device may further include: a simulation space construction module for identifying the physical structure of the semiconductor device, and setting the grid granularity of the physical structure according to the electric field concentration structure, high current density area, each position risk partition of the weak medium position and other areas, wherein the grid granularity setting is related to the risk characteristics of each position risk partition, and the grid granularity of other areas is larger than the grid granularity of the position risk partition, and the semiconductor device is structurally simulated by a simulation tool to construct a simulation space; a simulation space configuration module for embedding a groove feature element matching module and a groove feature optimization module in the simulation space, the groove feature element matching module includes a groove feature element library and an element matching combination module, wherein the groove feature element library includes all elements constituting the groove structure, the element matching combination module is used to perform element matching search in the groove feature element library according to the input features, and the groove feature optimization module is used to optimize the current-carrying conduction strategy of the semiconductor device groove according to the groove feature elements of the groove feature element matching module.

[0061] Next, the specific configuration of the groove structure configuration matching module 30 will be described in detail. As described above, based on the risk characteristics, the groove structure configuration matching is performed on each position partition of the electric field concentration structure, the high current density area, and the weak dielectric position to establish a matching feature space. The groove structure configuration matching module 30 may further include: a physical structure coordinate positioning unit is used to locate the physical structure coordinates according to the correspondence between the risk characteristics and the position partitions, and determine the compensation current-carrying conductive parameters according to the risk characteristics; a feature search unit is used to input the physical structure positioning coordinates and the compensation current-carrying conductive parameters as input features into the simulation space, extract structural features according to the physical structure positioning coordinates, use the structural features and the compensation current-carrying conductive parameters as constraint indexes, and search for physical features, structural features, and target functional features in the groove feature element library to obtain matching feature elements for each position partition, wherein the physical features include electric field strength, current density, temperature, and material electric field threshold, the structural features include groove shape, size, depth, spacing, material, and insulation type, and the target functional features include electric field uniformity, current shunting, and current blocking; a mapping association establishment unit is used to establish a mapping association between the matching feature elements and the position partitions to construct the matching feature space.

[0062] The specific configuration of the groove structure search combination module 40 will be described in detail below. As described above, a groove structure search combination is performed in the matching feature space, and the structural parameters of the search combination are fitted into the respective position partitions to evaluate the structural function matching and the current-carrying and conductive function matching. The groove structure search combination module 40 may further include: a penalty condition configuration unit for obtaining the functional constraint parameters of the semiconductor device in each position partition, and configuring the penalty condition according to the functional constraint parameters; an evaluation function construction unit for taking the compensated current-carrying and conductive parameters as the target, determining the spatial size constraint according to the structural characteristics, and constructing an evaluation function in combination with the penalty condition; an evaluation unit for randomly extracting two groove structure parameter combinations in the matching feature space, and using the evaluation condition to obtain the functional constraint parameters of the semiconductor device in each position partition; and The cost function evaluates the randomly selected groove structure parameter combination, takes the combination with the largest evaluation result as the search starting point, and determines the search direction and search step according to the difference between the two groups of groove structure parameter combinations; the groove characteristic element current optimal combination acquisition unit is used to import the search starting point, search direction, and search step into the groove feature optimization module for searching until the evaluation result reaches the target value or the search number is reached, so as to obtain the current optimal combination of groove characteristic elements; the functional matching evaluation unit is used to use the current optimal combination of groove characteristic elements to perform semiconductor device current-carrying and conductive simulation in the simulation space, and to evaluate the structural function matching and the current-carrying and conductive functional matching with the goal of compensating the current-carrying and conductive parameters.

[0063] Among them, the search starting point, search direction, and search step length are imported into the groove feature optimization module for search, and the groove structure search combination module 40 may further include: a search step length equalization unit is used to equalize the search step length to obtain an equalized step length and an initial step length; a search step length adjustment unit is used to perform a combined search according to the equalized step length and the initial step length, respectively, to perform search combination evaluation through an evaluation function, to evaluate the step length according to the difference in evaluation results, and to adjust the search step length according to the difference in step length and the difference in evaluation results; a search step length reset unit is used to perform step length optimization according to the search step length adjustment amount, and to determine the search step length with the largest probability of evaluation increment for resetting the search step length.

[0064] The groove structure current-carrying and conductive control device for local breakdown management provided by an embodiment of the present invention can execute the groove structure current-carrying and conductive control method for local breakdown management provided by any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0065] Although the present application makes various references to certain modules in the device according to the embodiments of the present application, any number of different modules may be used and run on the user terminal and / or server, and the various units and modules included are only divided according to functional logic, but are not limited to the above division, as long as the corresponding functions can be achieved; in addition, the specific names of the functional units are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of the present invention.

[0066] The above specific implementation manner does not constitute a limitation to the protection scope of the present application. It should be understood by those skilled in the art that various modifications, combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application. In some cases, the actions or steps recorded in the present application can be performed in an order different from that in the embodiment and can still achieve the desired results. In addition, the process depicted in the accompanying drawings does not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

Claims

1. A method for controlling current carrying and conduction of a trench structure for local breakdown management, characterized in that: The method comprises: Analyze the electric field distribution of semiconductor devices to identify electric field concentration structures, high current density areas, and weak dielectric locations; Mining local breakdown risk characteristics according to the electric field concentration structure, high current density area, and weak dielectric position to obtain risk characteristics of each position partition; Based on the risk characteristics, groove structure configuration matching is performed on each location partition of the electric field concentration structure, the high current density area, and the weak dielectric location to establish a matching feature space; Searching for a groove structure combination in the matching feature space, fitting the structural parameters of the search combination to each position partition, and evaluating the matching degree of structure function and the matching degree of current carrying and conducting function; The trench structure is selected according to the matching evaluation result, and integrated into the semiconductor device for current carrying and conduction control; Searching for a groove structure combination in the matching feature space, fitting the structural parameters of the search combination to each position partition, and evaluating the matching degree of structure function and current carrying and conductive function, including: Obtaining functional constraint parameters of semiconductor devices in each location partition, and configuring penalty conditions according to the functional constraint parameters; Taking compensation of current-carrying conductive parameters as a goal, determining spatial size constraints according to structural characteristics, and combining the penalty conditions to construct an evaluation function; Randomly extract two groove structure parameter combinations in the matching feature space, evaluate the randomly extracted groove structure parameter combinations using the evaluation function, use the combination with the largest evaluation result as the search starting point, and determine the search direction and search step according to the difference between the two groups of groove structure parameter combinations; The search starting point, search direction, and search step length are imported into the groove feature optimization module for searching until the evaluation result reaches the target value or the search times are reached, thereby obtaining the current optimal combination of groove feature elements; The current-carrying and conducting simulation of the semiconductor device is performed in the simulation space by utilizing the current-carrying and conducting elements of the grooves to evaluate the matching degree of the structure and function and the matching degree of the current-carrying and conducting function with the goal of compensating the current-carrying and conducting parameters.

2. The method for controlling current carrying and conduction of a trench structure for local breakdown management according to claim 1, characterized in that: According to the electric field concentration structure, high current density area, and weak dielectric position, local breakdown risk characteristics are mined to obtain risk characteristics of each position partition, including: Obtaining the electric field threshold of the structural material of the semiconductor device, and establishing the corresponding relationship between the electric field concentration structure, the high current density area, the weak dielectric position and the electric field threshold; Determining risk characteristics of weak medium position partitions according to the electric field threshold of the weak medium position; The electric field distribution gradient and current density value are calculated for the electric field concentration structure and the high current density area, and the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined in combination with the corresponding electric field threshold.

3. The method for controlling current carrying and conduction of a trench structure for local breakdown management according to claim 2, characterized in that: In combination with the corresponding electric field threshold, the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition are determined, including: Based on the distribution relationship of the electric field threshold of the structural material, obtaining local breakdown homogeneous cases, wherein the local breakdown homogeneous cases include local breakdown accident samples matching the electric field threshold distribution; According to the accident attributes of the electric field concentration structure and the high current density area, the local breakdown cases of the same family are divided into samples to construct an electric field concentration sample set and a high current density sample set; The electric field distribution gradient and the high current density value time series characteristics are fitted according to the electric field concentration sample set and the high current density sample set, respectively, to obtain the risk characteristics of the electric field concentration partition and the risk characteristics of the high current density partition.

4. The method for controlling current carrying and conduction of a trench structure for local breakdown management according to claim 1, characterized in that: Before establishing the matching feature space, the method further includes: Identify the physical structure of the semiconductor device, and set the grid granularity of the physical structure according to the electric field concentration structure, high current density area, each position risk zone of the weak medium position and other areas, wherein the grid granularity setting is related to the risk characteristics of each position risk zone, and the grid granularity of other areas is larger than the grid granularity of the position risk zone, perform structural simulation on the semiconductor device through a simulation tool, and construct a simulation space; A groove feature element matching module and a groove feature optimization module are built in the simulation space, wherein the groove feature element matching module includes a groove feature element library and an element matching combination module, wherein the groove feature element library includes all elements constituting the groove structure, the element matching combination module is used to perform element matching search in the groove feature element library according to input features, and the groove feature optimization module is used to perform optimization control of the current-carrying conduction strategy of the semiconductor device groove according to the groove feature elements of the groove feature element matching module.

5. The method for controlling current carrying and conduction of a trench structure for local breakdown management according to claim 4, characterized in that: Based on the risk characteristics, the groove structure configuration matching is performed for each location partition of the electric field concentration structure, the high current density area, and the weak dielectric location, and a matching feature space is established, including: According to the correspondence between the risk characteristics and the location partitions, the physical structure coordinates are located, and the compensation current-carrying conductive parameters are determined according to the risk characteristics; The physical structure positioning coordinates and the compensation current-carrying conductive parameters are used as input features and input into the simulation space, structural features are extracted according to the physical structure positioning coordinates, and the structural features and the compensation current-carrying conductive parameters are used as constraint indexes to search for physical features, structural features, and target functional features in the groove feature element library to obtain matching feature elements of each position partition, wherein the physical features include electric field strength, current density, temperature, and material electric field threshold, the structural features include groove shape, size, depth, spacing, material, and insulation type, and the target functional features include electric field uniformity, current shunting, and current blocking; An association is established between the matching feature element and the position partition mapping to construct the matching feature space.

6. The method for controlling current carrying and conduction of a trench structure for local breakdown management according to claim 1, characterized in that: The search starting point, search direction, and search step length are introduced into the groove feature optimization module for searching, and further comprising: Dividing the search step length equally to obtain an equalized step length and an initial step length; Performing combined searches according to the evenly divided step length and the initial step length, respectively, evaluating the search combination through an evaluation function, evaluating the step length according to the difference in the evaluation results, and adjusting the search step length according to the difference in the step length and the difference in the evaluation results; According to the search step adjustment amount, the step size is optimized, and the search step size with the largest evaluation increment probability is determined to reset the search step size.

7. A groove structure current-carrying conductive control device for local breakdown management, characterized in that: The device is used to implement the trench structure current carrying and conduction control method for local breakdown management according to any one of claims 1 to 6, and the device comprises: An electric field distribution analysis module, which is used to perform electric field distribution analysis on semiconductor devices and identify electric field concentration structures, high current density areas, and weak dielectric locations; A local breakdown risk feature mining module, which is used to mine local breakdown risk features according to the electric field concentration structure, high current density area, and weak dielectric position to obtain risk features of each position partition; A groove structure configuration matching module, wherein the groove structure configuration matching module is used to perform groove structure configuration matching on each position partition of the electric field concentration structure, the high current density area, and the weak dielectric position based on the risk characteristics, and establish a matching feature space; A groove structure search and combination module, which is used to perform a groove structure search and combination in the matching feature space, and fit the structural parameters of the search combination into each position partition, and evaluate the structural function matching degree and the current carrying and conductive function matching degree; A trench structure integration module is used to screen the trench structure according to the matching evaluation result and integrate it into the semiconductor device for current carrying and conduction control.

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