Inductively coupled antenna, substrate processing apparatus, and substrate processing method

Abstract

The invention provides an inductively coupled antenna, a substrate processing apparatus, and a substrate processing method. Plasma distribution inside a processing container is finely controlled. An inductively coupled antenna is provided with: a first antenna unit comprising a plurality of first antenna wires arranged in a spiral shape; and a second antenna section comprising a plurality of second antenna wires arranged in a spiral shape, the first antenna section and the second antenna section forming a rectangular plane, each first antenna wire having: corner structure sections arranged in a plurality of corner sections arranged in order in the circumferential direction among four corner sections of the rectangular plane; and a first connecting part that connects the corner structure parts, and each second antenna line has: side structure parts that are disposed on a plurality of side parts that are sequentially arranged in the circumferential direction among the four side parts of the rectangular plane; and a second connecting part that connects the side structure parts, and the first connecting parts and the second connecting parts are configured so that the separation distance from the rectangular plane can be individually adjusted.

Description

Technical Field

[0001] The present disclosure relates to an inductively coupled antenna, a substrate processing device, and a substrate processing method. Background Art

[0002] In a substrate processing device for performing plasma processing on a rectangular substrate, the interior of a processing container for storing the rectangular substrate is divided into an antenna chamber and a processing chamber by a window member composed of a dielectric. In addition, a high-frequency antenna is arranged inside the antenna chamber, and an induced electric field is formed inside the processing chamber by supplying high-frequency power to the high-frequency antenna, thereby exciting the processing gas inside the processing chamber to generate plasma.

[0003] The high-frequency antenna has a first antenna portion and a second antenna portion each formed by arranging a plurality of antenna wires in a spiral shape, and the portions of the first antenna portion and the second antenna portion facing the window member as a whole form a rectangular plane corresponding to the rectangular substrate. The antenna wires of the first antenna portion form the four corners of the rectangular plane, and the antenna wires of the second antenna portion form the four sides of the rectangular plane. Furthermore, by individually controlling the magnitude of the high-frequency power supplied to the first antenna portion and the magnitude of the high-frequency power supplied to the second antenna portion, the strength of the induced electric field in the region corresponding to the corners and sides of the rectangular plane is adjusted. Thus, the plasma distribution inside the processing chamber can be controlled separately for each corner and each side. (For example, refer to Patent Document 1.)

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2012-256660 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The technology disclosed herein finely controls the plasma distribution inside the processing container.

[0009] Solutions for solving problems

[0010] A technical solution involved in the present disclosure is an inductive coupling antenna, which forms an induced electric field inside a processing container for performing plasma processing on a rectangular substrate to generate plasma, wherein the inductive coupling antenna includes: a first antenna portion, which is composed of a plurality of first antenna wires arranged in a spiral shape; and a second antenna portion, which is composed of a plurality of second antenna wires arranged in a spiral shape, and high-frequency power is supplied to the first antenna portion and the second antenna portion respectively, the first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane, and each of the first antenna wires is arranged so that, in the circumferential direction of the rectangular plane, the rotation angles thereof are mutually opposite with the center of the rectangular plane as the rotation center. The positions of the two angles are staggered with each other, and each of the second antenna wires is configured so that, in the circumferential direction, the phases of the rotation angles are staggered with each other, and each of the first antenna wires has: each corner structure portion, which is configured at least two of the four corners arranged in sequence in the circumferential direction; and a first connecting portion, which connects the corner structure portions and is configured in a manner avoiding the side portion between the two corners, and each of the second antenna wires has: each side structure portion, which is configured at at least two of the four sides arranged in sequence in the circumferential direction; and a second connecting portion, which connects the side structure portions and is configured in a manner avoiding the corner portion between the two sides, and each of the first connecting portions and each of the second connecting portions is configured to be able to individually adjust the separation distance from the rectangular plane.

[0011] Effects of the Invention

[0012] According to the technology disclosed herein, it is possible to finely control the plasma distribution inside the processing container. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a cross-sectional view schematically showing the structure of a substrate processing apparatus as one embodiment of the technology disclosed herein.

[0014] Figure 2 Observed from the processing chamber side Figure 1 Figure 1.2 shows a window widget.

[0015] Figure 3 It is a perspective view showing the structure of the first antenna portion of the high-frequency antenna.

[0016] Figure 4 It is a perspective view showing the structure of the second antenna portion of the high-frequency antenna.

[0017] Figure 5 It is a diagram for explaining a height adjustment mechanism of each first connection portion of the first antenna portion and each second connection portion of the second antenna portion.

[0018] Figure 6 It is a perspective view showing an example in which the height of each first connection portion is changed in the first antenna portion.

[0019] Figure 7 It is a perspective view showing an example in which the height of each second connection portion is changed in the second antenna portion.

[0020] Figure 8 It is used for illustration purposes Figure 1 A diagram showing an example of a case where the antenna unit in FIG. 1 varies the degree of plasma processing.

[0021] Fig. 9 It is a diagram for explaining a method of selecting a first antenna wire and a second antenna wire having a first connecting portion and a second connecting portion whose heights change when the degree of plasma processing is changed.

[0022] Fig.10 It is a diagram for explaining a method of selecting a first antenna wire and a second antenna wire having a first connecting portion and a second connecting portion whose heights change when the degree of plasma processing is changed.

[0023] Fig.11 It is a perspective view showing the structure of a modified example of the first antenna portion of the high-frequency antenna.

[0024] Fig.12 It is a perspective view showing the structure of a modified example of the second antenna portion of the high-frequency antenna.

[0025] Fig.13 This is a diagram showing a connection state between the first antenna wire or the second antenna wire and a terminal for supplying high-frequency power.

[0026] Description of Reference Numerals

[0027] G, rectangular substrate; 10, substrate processing device; 11, processing container; 13, window member; 14, antenna chamber; 15, processing chamber; 23, antenna unit; 24, mounting table; 39, first antenna portion; 39a to 39d, first antenna wire; 39aa, 39ab, 39ac, 39bb, 39bc, 39bd, 39cc, 39cd, 39ca, 39dd, 39da, 39db, corner structure; 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, 39d2, first connecting portion; 39aw, 39ax, 39ay, 39az, 39bw, 39bx, 39by, 39bz, 39cw, 39cx, 39cy, 39cz, 39dw, 39dx, 39dy, 39dz, first extension portion; 40, second antenna portion; 40a~40d, second antenna wire; 40aa, 40ab, 40bb, 40bc, 40cc, 40cd, 40dd, 40da, side structure portion; 40a1, 40b1, 40c1, 40d1, second connecting portion; 40ay, 40az, 40by, 40bz, 40cy, 40cz, 40dy, 40dz, second extension portion. DETAILED DESCRIPTION

[0028] In addition, as processing of rectangular substrates becomes more precise, it is desired to more precisely control the plasma distribution inside the processing chamber.

[0029] However, in the substrate processing device of Patent Document 1, the four corners of the rectangular plane of the high-frequency antenna are composed of the same first antenna part, and the four sides of the rectangular plane are composed of the same second antenna part. Therefore, the magnitude of the high-frequency power supplied to each corner of the rectangular plane is the same, and the magnitude of the high-frequency power supplied to each side of the rectangular plane is also the same. As a result, it is impossible to individually adjust the intensity of the induced electric field in the area corresponding to each corner or each side of the rectangular plane for each corner or each side, and it is difficult to finely control the plasma distribution inside the processing chamber.

[0030] In contrast, in the technology disclosed herein, the impedance of at least one of the plurality of antenna wires of the first antenna unit forming each corner is changed. In addition, the impedance of at least one of the plurality of antenna wires of the second antenna unit forming each side is changed. Thus, the strength of the induced electric field in the region opposite to each corner and each side of the rectangular plane is individually adjusted.

[0031] Hereinafter, one embodiment of the technology disclosed herein will be described with reference to the drawings. Figure 1 It is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to the present embodiment.

[0032] The substrate processing apparatus 10 is used for plasma processing when forming thin film transistors on a glass substrate for FPD (Flat Panel Display) which is a rectangular substrate, etching processing of metal films, ITO films, oxide films, etc., and ashing processing of resist films.

[0033] The substrate processing device 10 has a square cylindrical airtight processing container 11, which is made of a conductive material, such as aluminum with an anodized inner wall surface, and contains a rectangular substrate G. The processing container 11 can be disassembled and grounded by a grounding wire 12. The processing container 11 is divided into an antenna chamber 14 and a processing chamber 15 by a window member 13. Therefore, the window member 13 constitutes the top wall of the processing chamber 15. The window member 13 is made of Al 2 O 3 It is composed of dielectric materials such as ceramics, quartz, etc.

[0034] A shower housing 16 for supplying processing gas is embedded in the lower portion of the window member 13. The shower housing 16 is suspended from the top of the processing container 11 by a plurality of suspension rods (not shown) and supports the window member 13 from below.

[0035] The shower housing 16 is made of a conductive material, for example, aluminum with an anodized surface. A horizontally extending gas flow path 17 is formed inside the shower housing 16, and the gas flow path 17 communicates with a plurality of gas ejection holes 18 extending downward.

[0036] On the other hand, a gas supply pipe 19 connected to the gas flow path 17 is provided at the center of the upper surface of the window member 13. The gas supply pipe 19 passes through the top of the processing container 11 and is connected to a processing gas supply system 20 including a processing gas supply source and a valve system. Therefore, in the substrate processing apparatus 10, the processing gas supplied from the processing gas supply system 20 is supplied to the inside of the shower housing 16 via the gas supply pipe 19, and then ejected from each gas ejection hole 18 to the inside of the processing chamber 15.

[0037] A support frame 21 protruding inward is provided between the side wall 14 a of the antenna room 14 and the side wall 15 a of the processing chamber 15 in the processing container 11 , and the window member 13 is placed on the support frame 21 .

[0038] An antenna unit 23 including a high frequency (RF) antenna 22 (inductively coupled antenna) is disposed inside the antenna chamber 14. By supplying high frequency power to the high frequency antenna 22, an induced electric field is formed inside the processing chamber 15, and the induced electric field excites the processing gas inside the processing chamber 15 to generate plasma.

[0039] A mounting table 24 for mounting a rectangular substrate G is provided at the lower part of the processing chamber 15 so as to face the high frequency antenna 22 via the window member 13. The mounting table 24 is made of a conductive material, for example, aluminum with an anodized surface. The rectangular substrate G mounted on the mounting table 24 is held on the mounting table 24 by an electrostatic holding disk (not shown).

[0040] The mounting table 24 is disposed at the bottom of the processing container 11 and supported by an insulating frame 25 having an opening at the bottom. The side wall 15a of the processing chamber 15 is provided with a carrying port 28 for carrying the rectangular substrate G in and out and a gate valve 29 for opening and closing the carrying port 28.

[0041] The mounting table 24 is connected to a high frequency power source 32 via a matching device 31 by a power supply line 30 passing through an opening of the insulating frame 25. The high frequency power source 32 applies a high frequency power for bias, for example, a high frequency power of 3.2 MHz, to the mounting table 24 during plasma processing. The ions in the plasma generated inside the processing chamber 15 are effectively attracted to the rectangular substrate G by the high frequency power for bias.

[0042] In order to control the temperature of the rectangular substrate G, a temperature control mechanism including a heating unit such as a ceramic heater, a refrigerant flow path, and a temperature sensor (not shown) are provided inside the mounting table 24. The pipes and wirings of these mechanisms are all led out to the outside of the processing container 11 through the opening of the insulating frame 25. In addition, a shielding ring may be provided on the upper part of the side wall of the insulating frame 25 that is erected to cover the side surface of the mounting table 24.

[0043] An exhaust device 34 including a vacuum pump is connected to the bottom of the processing chamber 15 via an exhaust pipe 33. The exhaust device 34 exhausts the processing chamber 15 to maintain the interior of the processing chamber 15 in a vacuum environment at a predetermined pressure (eg, 1.33 Pa) during plasma processing.

[0044] On the back side of the rectangular substrate G placed on the mounting table 24, an extremely thin cooling space (not shown) is formed between the rectangular substrate G and the mounting surface of the mounting table 24, and a heat transfer gas flow path 35 for supplying heat transfer gas to the cooling space is provided on the mounting table 24. By supplying heat transfer gas to the cooling space on the back side of the rectangular substrate G, the temperature of the rectangular substrate G can be adjusted by the temperature control mechanism even if the interior of the processing chamber 15 is a vacuum environment.

[0045] Each component of the substrate processing apparatus 10 is controlled by a control unit 36 ​​including a microprocessor (computer). The control unit 36 ​​is connected to a keyboard (not shown) for receiving input operations from an operator and a user interface 37 for displaying the operating status of the substrate processing apparatus 10. In addition, the control unit 36 ​​is connected to a storage unit 38. When performing various plasma processes, the control unit 36 ​​controls each component of the substrate processing apparatus 10 according to the process recipe stored in the storage unit 38.

[0046] Next, the antenna unit 23 will be described in detail. Figure 2 It is viewed from the processing chamber 15 side. Figure 1 The window member 13 is shown in FIG. 1 , and the high frequency antenna 22 of the antenna unit 23 disposed in the antenna chamber 14 is shown in a perspective manner by a dotted line. Figure 3 2 is a perspective view showing the structure of the first antenna portion 39 of the high-frequency antenna 22. Figure 4 It is a perspective view showing the structure of the second antenna portion 40 of the high-frequency antenna 22 .

[0047] The high frequency antenna 22 of the antenna unit 23 is composed of a first antenna portion 39, a second antenna portion 40, and a third antenna portion 41. The first antenna portion 39 is composed of a plurality of, for example, four, first antenna wires 39a to 39d arranged in a spiral shape. The second antenna portion 40 is composed of a plurality of, for example, four, second antenna wires 40a to 40d arranged in a spiral shape. The third antenna portion 41 is composed of a plurality of, for example, four, third antenna wires arranged in a spiral shape. At this time, the first antenna portion 39 and the second antenna portion 40 are arranged in a manner opposite to the peripheral portion of the window member 13, and the third antenna portion 41 is arranged in a manner opposite to the central portion of the window member 13. Moreover, the first antenna portion 39, the second antenna portion 40, and the third antenna portion 41 form a rectangular plane.

[0048] For example, Figure 2 As shown, the window member 13 is divided into four corner areas A to D (corner area group) corresponding to the four corners, four side areas A to D (side area group) corresponding to the four sides sandwiched by two adjacent corners, and an inner area corresponding to the central part. In this case, the first antenna part 39 is configured to be opposite to the corner areas A to D, the second antenna part 40 is configured to be opposite to the side areas A to D, and the third antenna part 41 is configured to be opposite to the inner area. That is, the first antenna part 39 forms the four corners of the rectangular plane, the second antenna part 40 forms the four sides of the rectangular plane, and the third antenna part 41 forms the central part of the rectangular plane. In addition, in this embodiment, the reference numerals A, B, C, D (a, b, c, d) are circulated in the order of A, B, C, D (a, b, c, d), and D (d) is followed by A (a). For example, C to A represents the arrangement order of C, D, and A.

[0049] like Figure 3As shown, the four first antenna wires 39a to 39d of the first antenna portion 39 are arranged in a spiral shape so that the phases of the rotation angles with the center of the rectangular plane (the intersection of the two diagonals of the rectangle) as the rotation center are staggered from each other, for example, by 90°. Each of the first antenna wires 39a to 39d has a starting point in a different angular region. Specifically, the first antenna wire 39a has a starting point in the angular region A, the first antenna wire 39b has a starting point in the angular region B, the first antenna wire 39c has a starting point in the angular region C, and the first antenna wire 39d has a starting point in the angular region D. In addition, each of the first antenna wires 39a to 39d has an end point in a different angular region. Specifically, the first antenna wire 39a has an end point in the angular region C, the first antenna wire 39b has an end point in the angular region D, the first antenna wire 39c has an end point in the angular region A, and the first antenna wire 39d has an end point in the angular region B.

[0050] The first antenna wire 39a includes corner structure portions 39aa to 39ac, which are respectively opposite to corner regions A to C arranged in sequence in the circumferential direction of the rectangular plane, and a first connecting portion 39a1, which connects the corner structure portion 39aa and the corner structure portion 39ab. In addition, the first antenna wire 39a includes a first connecting portion 39a2, which connects the corner structure portion 39ab and the corner structure portion 39ac.

[0051] The first antenna wire 39b has corner structure portions 39bb to 39bd which are respectively opposite to corner regions B to D arranged in sequence in the circumferential direction of the rectangular plane, and a first connecting portion 39b1 which connects the corner structure portion 39bb and the corner structure portion 39bc. In addition, the first antenna wire 39b has a first connecting portion 39b2 which connects the corner structure portion 39bc and the corner structure portion 39bd.

[0052] The first antenna wire 39c includes corner structures 39cc to 39ca that are respectively opposite to corner regions C to A that are arranged in sequence in the circumferential direction of the rectangular plane, and a first connecting portion 39c1 that connects the corner structure 39cc and the corner structure 39cd. In addition, the first antenna wire 39c includes a first connecting portion 39c2 that connects the corner structure 39cd and the corner structure 39ca.

[0053] The first antenna wire 39d has corner structure portions 39dd to 39db, which are respectively opposite to corner regions D to B arranged in sequence in the circumferential direction of the rectangular plane, and a first connecting portion 39d1, which connects the corner structure portion 39dd and the corner structure portion 39da. In addition, the first antenna wire 39d has a first connecting portion 39d2, which connects the corner structure portion 39da and the corner structure portion 39db.

[0054] like Figure 4As shown, the four second antenna wires 40a to 40d of the second antenna portion 40 are arranged in a spiral shape so that the phases of the rotation angles with the center of the rectangular plane as the rotation center are staggered from each other, for example, by 90° in the circumferential direction of the rectangular plane. Each of the second antenna wires 40a to 40d has a starting point in a different side region. Specifically, the second antenna wire 40a has a starting point in the side region A, the second antenna wire 40b has a starting point in the side region B, the second antenna wire 40c has a starting point in the side region C, and the second antenna wire 40d has a starting point in the side region D. In addition, each of the second antenna wires 40a to 40d has an end point in a different side region. Specifically, the second antenna wire 40a has an end point in the side region B, the second antenna wire 40b has an end point in the side region C, the second antenna wire 40c has an end point in the side region D, and the second antenna wire 40d has an end point in the side region A.

[0055] The second antenna wire 40a has side structure portions 40aa and 40ab, which are respectively opposite to side regions A and B arranged in sequence in the circumferential direction of the rectangular plane, and a second connecting portion 40a1, which connects the side structure portion 40aa and the side structure portion 40ab. The second antenna wire 40b has side structure portions 40bb and 40bc, which are respectively opposite to side regions B and C arranged in sequence in the circumferential direction of the rectangular plane, and a second connecting portion 40b1, which connects the side structure portion 40bb and the side structure portion 40bc.

[0056] The second antenna wire 40c has side structure portions 40cc and 40cd, which are respectively opposite to side regions C and D arranged in sequence in the circumferential direction of the rectangular plane, and a second connecting portion 40c1, which connects the side structure portion 40cc and the side structure portion 40cd. The second antenna wire 40d has side structure portions 40dd and 40da, which are respectively opposite to side regions D and A arranged in sequence in the circumferential direction of the rectangular plane, and a second connecting portion 40d1, which connects the side structure portion 40dd and the side structure portion 40da.

[0057] In the high-frequency antenna 22, the first connecting portions 39a1 and 39d2 of the first antenna portion 39 are arranged above the side structure portions 40aa and 40da in a manner avoiding the side structure portions 40aa and 40da of the second antenna portion 40. The first connecting portions 39b1 and 39a2 of the first antenna portion 39 are arranged above the side structure portions 40bb and 40ab in a manner avoiding the side structure portions 40bb and 40ab of the second antenna portion 40. The first connecting portions 39c1 and 39b2 of the first antenna portion 39 are arranged above the side structure portions 40cc and 40bc in a manner avoiding the side structure portions 40cc and 40bc of the second antenna portion 40. The first connecting portions 39d1 and 39c2 of the first antenna portion 39 are arranged above the side structure portions 40dd and 40cd in a manner avoiding the side structure portions 40dd and 40cd of the second antenna portion 40.

[0058] Furthermore, the corner structure portion 39aa has a first extension portion 39aw extending vertically upward in a manner away from the rectangular plane at one end (end portion). The corner structure portion 39ab has first extension portions 39ax and 39ay extending vertically upward in a manner away from the rectangular plane at both ends (end portions). The corner structure portion 39ac has a first extension portion 39az extending vertically upward in a manner away from the rectangular plane at one end. The corner structure portion 39bb has a first extension portion 39bw extending vertically upward in a manner away from the rectangular plane at one end. The corner structure portion 39bc has first extension portions 39bx and 39by extending vertically upward in a manner away from the rectangular plane at both ends. The corner structure portion 39bd has a first extension portion 39bz extending vertically upward in a manner away from the rectangular plane at one end. The corner structure portion 39cc has a first extension portion 39cw extending vertically upward in a manner away from the rectangular plane at one end. The corner structure portion 39cd has first extension portions 39cx and 39cy extending vertically upward away from the rectangular plane at both ends. The corner structure portion 39ca has a first extension portion 39cz extending vertically upward away from the rectangular plane at one end. The corner structure portion 39dd has a first extension portion 39dw extending vertically upward away from the rectangular plane at one end. The corner structure portion 39da has first extension portions 39dx and 39dy extending vertically upward away from the rectangular plane at both ends. The corner structure portion 39db has a first extension portion 39dz extending vertically upward away from the rectangular plane at one end.

[0059] The first connecting portion 39a1 is attached to the first extension portion 39aw and the first extension portion 39ax, and the first connecting portion 39a2 is attached to the first extension portion 39ay and the first extension portion 39az. The first connecting portion 39b1 is attached to the first extension portion 39bw and the first extension portion 39bx, and the first connecting portion 39b2 is attached to the first extension portion 39by and the first extension portion 39bz. The first connecting portion 39c1 is attached to the first extension portion 39cw and the first extension portion 39cx, and the first connecting portion 39c2 is attached to the first extension portion 39cy and the first extension portion 39cz. The first connecting portion 39d1 is attached to the first extension portion 39dw and the first extension portion 39dx, and the first connecting portion 39d2 is attached to the first extension portion 39dy and the first extension portion 39dz.

[0060] In the high frequency antenna 22, the second connection portion 40a1 of the second antenna portion 40 is arranged above the corner structure portions 39bb, 39ab, 39db in a manner avoiding the corner structure portions 39bb, 39ab, 39db of the first antenna portion 39. The second connection portion 40b1 of the second antenna portion 40 is arranged above the corner structure portions 39cc, 39bc, 39ac in a manner avoiding the corner structure portions 39cc, 39bc, 39ac of the first antenna portion 39. The second connection portion 40c1 of the second antenna portion 40 is arranged above the corner structure portions 39dd, 39cd, 39bd in a manner avoiding the corner structure portions 39dd, 39cd, 39bd of the first antenna portion 39. The second connection portion 40 d 1 of the second antenna portion 40 is arranged above the corner structure portions 39 aa , 39 da , and 39 ca of the first antenna portion 39 so as to avoid the corner structure portions 39 aa , 39 da , and 39 ca .

[0061] Furthermore, the side structure portion 40aa has a second extension portion 40ay extending vertically upward away from the rectangular plane at one end, and the side structure portion 40ab has a second extension portion 40az extending vertically upward away from the rectangular plane at one end. The side structure portion 40bb has a second extension portion 40by extending vertically upward away from the rectangular plane at one end, and the side structure portion 40bc has a second extension portion 40bz extending vertically upward away from the rectangular plane at one end. The side structure portion 40cc has a second extension portion 40cy extending vertically upward away from the rectangular plane at one end, and the side structure portion 40cd has a second extension portion 40cz extending vertically upward away from the rectangular plane at one end. The side structure portion 40dd has a second extension portion 40dy extending vertically upward away from the rectangular plane at one end, and the side structure portion 40da has a second extension portion 40dz extending vertically upward away from the rectangular plane at one end.

[0062] The second connecting portion 40a1 is attached to the second extending portion 40ay and the second extending portion 40az, the second connecting portion 40b1 is attached to the second extending portion 40by and the second extending portion 40bz, the second connecting portion 40c1 is attached to the second extending portion 40cy and the second extending portion 40cz, and the second connecting portion 40d1 is attached to the second extending portion 40dy and the second extending portion 40dz.

[0063] In the high-frequency antenna 22, the first connecting portions 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, 39d2 of the first antenna portion 39 are configured so that the height (separation distance from the rectangular plane) can be adjusted individually. In addition, the second connecting portions 40a1, 40b1, 40c1, 40d1 of the second antenna portion 40 are also configured so that the height (separation distance from the rectangular plane) can be adjusted individually.

[0064] Figure 5 39a1 and the like of the first antenna unit 39 and the second antenna unit 40a1 and the like of the second antenna unit 40 are used to explain the height adjustment mechanism. Figure 5 , the mounting structure of the first connecting portion 39a1 with respect to the first extending portion 39aw and the first extending portion 39ax is shown, but the mounting structures of the other first connecting portions 39a2 and the second connecting portion 40a1 also have the same structure.

[0065] exist Figure 5 In the embodiment, the first extension part 39aw and the first extension part 39ax are provided with a plurality of mounting holes 42 arranged in the height direction. In addition, the first connecting part 39a1 has mounting parts 39a1a and 39a1b extending downward from both ends, and the mounting parts 39a1a and 39a1b are also provided with a plurality of, for example, two mounting holes 43 arranged in the height direction.

[0066] When the first connecting portion 39a1 is mounted on the first extension portion 39aw and the first extension portion 39ax, the positions of the two mounting holes 43 are aligned with the positions of two mounting holes 42 among the plurality of mounting holes 42, and the bolts 44 passing through the mounting holes 42 and 43 are tightened with the nuts 45. At this time, by changing the two mounting holes 42 whose positions are aligned with the two mounting holes 43, the mounting position of the first connecting portion 39a1 relative to the first extension portion 39aw and the first extension portion 39ax, that is, the height of the first connecting portion 39a1 can be changed.

[0067] In addition, as long as the mounting position of the first connecting portion 39a1 relative to the first extending portion 39aw and the first extending portion 39ax can be changed, the mounting structure of the first connecting portion 39a1 relative to the first extending portion 39aw and the first extending portion 39ax is not limited to Figure 5 The structure shown.

[0068] Figure 3 The height of the first connecting parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 of the first antenna part 39 is set to a standard height. The standard height here may be, for example, a height when the first connecting part 39a1 is mounted in a mounting hole 42 located in the center in the height direction among the plurality of mounting holes 42. In addition, the height of the first connecting part 39a1 when mounted in the lowest mounting hole 42 is a height above a height at which the electric field generated by the high-frequency current flowing through the first connecting part 39a1 does not affect the induced electric field generated inside the processing chamber 15.

[0069] However, as described above, the heights of the first connecting parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 can be adjusted individually. For example, the height of the first connecting part 39a1 can be lower than the standard height, the height of the first connecting part 39b1 can be higher than the standard height, the height of the first connecting part 39c1 can be higher than the standard height, and the height of the first connecting part 39d1 can be lower than the standard height (see Figure 6 ).

[0070] in addition, Figure 4 The height of the second connection parts 40a1, 40b1, 40c1, and 40d1 of the second antenna part 40 is set to a standard height. The standard height here can also be set to, for example, the height when the second connection part 40a1 is installed in the mounting hole 42 located in the center in the height direction among the plurality of mounting holes 42. In addition, the height of the second connection part 40a1 when installed in the lowest mounting hole 42 is a height above the height at which the electric field generated by the high-frequency current flowing through the second connection part 40a1 does not affect the induced electric field generated inside the processing chamber 15.

[0071] However, as described above, the heights of the second connecting parts 40a1, 40b1, 40c1, and 40d1 can also be adjusted individually. For example, the height of the second connecting part 40a1 can be made higher than the standard height, the height of the second connecting part 40b1 can be made lower than the standard height, the height of the second connecting part 40c1 can be made lower than the standard height, and the height of the second connecting part 40d1 can be made higher than the standard height (see Figure 7 ).

[0072] Power is supplied to the first antenna portion 39 via four terminals 46 connected to the four first antenna wires 39a to 39d, respectively. Fig.13(A) shows the connection between the first antenna wire 39a and the terminal 46. The first antenna wires 39b, 39c, and 39d are connected to the terminal 46 in the same manner. In addition, the second antenna unit 40 is powered via four terminals 47 connected to the four second antenna wires 40a to 40d, respectively. Fig.13 (B) shows the connection method of second antenna wire 40a and terminal 47. The connection method of each of second antenna wires 40b, 40c, and 40d and terminal 47 is similar.

[0073] The first power supply member 48 is connected to each terminal 46 of the first antenna portion 39, and the second power supply member 49 is connected to each terminal 47 of the second antenna portion 40 (in Figure 1 , only one of the first power supply component 48 and the second power supply component 49 is shown respectively). Each first power supply component 48 is connected to a power supply line 50, and each second power supply component 49 is connected to a power supply line 51. The power supply line 50 and the power supply line 51 are branched from the power supply line 57, and the matching device 52 and the first high-frequency power supply 53 are connected to the power supply line 57. Thus, a high-frequency power with a frequency of, for example, 13.56 MHz is supplied from the first high-frequency power supply 53 to the first antenna unit 39 and the second antenna unit 40, respectively. In addition, although not shown in the figure, a high-frequency power with a frequency of, for example, 13.56 MHz is supplied from the first high-frequency power supply 53 to each third antenna wire of the third antenna unit 41 via a power supply line branched from the power supply line 57. In addition, in the substrate processing device 10, variable capacitors (not shown) are provided in any two of the three power supply lines that supply high-frequency power to the first antenna unit 39, the second antenna unit 40, and the third antenna unit 41, respectively. By controlling these variable capacitors using the control unit 36, it is possible to control the ratio of the high-frequency power supplied to the first antenna unit 39, the second antenna unit 40, and the third antenna unit 41. In addition, the variable capacitors may be provided on all three power supply lines. In addition, any two of the three power supply lines and the other one may be connected to different high-frequency power supplies, or the three power supply lines may be connected to separate high-frequency power supplies.

[0074] The high-frequency antenna 22 is disposed so as to be separated from the window member 13 by a spacer 56 formed of an insulating member, and its arrangement region corresponds to the rectangular substrate G.

[0075] In addition, in the substrate processing apparatus 10, by controlling the ratio of the high-frequency power supplied to the first antenna unit 39 and the second antenna unit 40, the strength of the induced electric field generated in the area opposite to the corner area A to D (corner area group) and the side area A to D (side area group) can be independently adjusted. In addition, by controlling the ratio of the high-frequency power supplied to the third antenna unit 41, the strength of the induced electric field generated in the area opposite to the inner area can be independently adjusted. Thus, the plasma distribution inside the processing chamber 15 can be divided into the corner area group, the side area group, and the inner area for control.

[0076] Furthermore, in the present embodiment, the heights of the first connection parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 can be adjusted individually, and the heights of the second connection parts 40a1, 40b1, 40c1, and 40d1 can also be adjusted individually.

[0077] For example, if the height of the first connecting portion 39a1 is changed, the length of the first antenna wire 39a changes, and the impedance of the first antenna wire 39a changes. If the impedance of the first antenna wire 39a changes, when the first high-frequency power source 53 supplies high-frequency power to the first antenna portion 39, the high-frequency current flowing through the first antenna wire 39a changes. Moreover, if the high-frequency current flowing through the first antenna wire 39a changes, the intensity of the induced electric field generated in the area (angle area A, angle area B, angle area C) opposite to the first antenna wire 39a also changes. Moreover, by changing the intensity of the induced electric field, the state of plasma such as the plasma density of the opposite area also changes. For the first antenna wires 39b, 39c, and 39d, the heights of the corresponding first connecting portions 39b1, 39c1, and 39d1 can also be changed in the same manner, so that the intensity of the induced electric field in each opposite area changes, and the state of plasma changes. That is, the plasma distribution can be divided into regions facing the first antenna wires 39 a to 39 d and controlled.

[0078] In addition, for example, by changing the height of the second connecting portion 40a1, the impedance of the second antenna wire 40a can be changed for the same reason, and the strength of the induced electric field generated in the region (side region A, side region B) facing the second antenna wire 40a can also be changed. Similarly, the heights of the second connecting portions 40b1, 40c1, and 40d1 can be changed to change the strength of the induced electric field in the region facing the second antenna wires 40b, 40c, and 40d, respectively. In this way, the plasma distribution can be divided into the regions facing the second antenna wires 40a to 40d and controlled.

[0079] That is, in this embodiment, by changing the heights of the first connecting portions 39a1 to 39d2 and the second connecting portions 40a1 to 40d1, the plasma distribution can be divided and controlled more finely than in the corner region group, the side region group, and the inner region.

[0080] For example, Figure 6 As shown in the example, if the height of the first connecting portion 39a1 is lowered from the standard height, the length of the first antenna wire 39a is shortened, so the impedance of the first antenna wire 39a is reduced, and the high-frequency current flowing through the first antenna wire 39a is increased. At this time, the induced electric field generated in the corner regions A, B, and C, which are the regions opposite to the first antenna wire 39a, becomes stronger, and the density of the plasma is increased. As a result, the degree of plasma treatment applied to the portion of the rectangular substrate G opposite to the corner regions A, B, and C can be increased. For example, in the etching process using plasma, the etching rate of the oxide film can be increased, and in the ashing process, the ashing rate of the resist can be increased. Similarly, if the height of the first connecting portion 39d1 is lowered from the standard height, the impedance of the first antenna wire 39d is reduced, so the degree of plasma treatment applied to the portion of the rectangular substrate G opposite to the corner regions D, A, and B can be increased.

[0081] In addition, if Figure 6 As shown in the example, if the height of the first connecting portion 39b1 is made higher than the standard height, the length of the first antenna wire 39b becomes longer, so the impedance of the first antenna wire 39b increases, and the high-frequency current flowing through the first antenna wire 39b decreases. At this time, the induced electric field generated in the area facing the first antenna wire 39b, that is, the corner areas B, C, and D, becomes weaker, and the density of the plasma decreases. As a result, the degree of plasma treatment applied to the portion of the rectangular substrate G facing the corner areas B, C, and D facing the first antenna wire 39b can be reduced. For example, in the etching process of the oxide film or the like using plasma, the etching rate can be reduced, and in the ashing process, the ashing rate of the resist or the like can be reduced. Similarly, if the height of the first connecting portion 39c1 is made higher than the standard height, the impedance of the first antenna wire 39c increases, so the degree of plasma treatment applied to the portion of the rectangular substrate G facing the corner areas C, D, and A can be reduced.

[0082] Moreover, for example, Figure 7As shown in the example, if the height of the second connecting portion 40a1 is made higher than the standard height, the length of the second antenna wire 40a becomes longer, so the impedance of the second antenna wire 40a increases, and the high-frequency current flowing through the second antenna wire 40a decreases. At this time, the induced electric field generated in the area opposite to the second antenna wire 40a, that is, the side areas A and B, becomes weaker, and the density of the plasma decreases. As a result, the degree of plasma treatment performed on the portion of the rectangular substrate G opposite to the side areas A and B can be weakened. Similarly, if the height of the second connecting portion 40d1 is made higher than the standard height, the impedance of the second antenna wire 40d increases, so the degree of plasma treatment performed on the portion of the rectangular substrate G opposite to the side areas D and A can be weakened.

[0083] In addition, if Figure 7 As shown in the example, if the height of the second connecting portion 40b1 is lower than the standard height, the length of the second antenna wire 40b is shortened, so the impedance of the second antenna wire 40b is reduced, and the high-frequency current flowing through the second antenna wire 40b is increased. At this time, the induced electric field generated in the area opposite to the second antenna wire 40b, that is, the side areas B and C, becomes stronger, and the density of the plasma increases. As a result, the degree of plasma treatment performed on the portion of the rectangular substrate G opposite to the side areas B and C, that is, the area opposite to the second antenna wire 40b, can be enhanced. Similarly, if the height of the second connecting portion 40c1 is lower than the standard height, the impedance of the second antenna wire 40c is reduced, so the degree of plasma treatment performed on the portion of the rectangular substrate G opposite to the side areas C and D can be enhanced.

[0084] Thus, in this embodiment, the plasma distribution inside the processing chamber 15 can be divided more finely than the corner region group, the side region group, and the inner region, and can be divided into, for example, corner regions A, B, and C, and side regions A and B for control. That is, the plasma distribution inside the processing chamber 15 can be finely controlled.

[0085] In addition, in this embodiment, the heights of the first connection parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 can be reduced. In addition, the heights of the second connection parts 40a1, 40b1, 40c1, and 40d1 can also be reduced.

[0086] However, for example, if the height of the first connecting portion 39a1 is too low, the high-frequency current flowing through the first connecting portion 39a1 may affect the induced electric field generated inside the processing chamber 15. Therefore, the range of the adjustable height of the first connecting portion 39a1 (adjustment range) is limited to a range in which the high-frequency current flowing through the first connecting portion 39a1 does not affect the induced electric field generated inside the processing chamber 15. Specifically, the lowest position of each mounting hole 42 of the first extension portions 39aw and 39ax is set so that the height of the first connecting portion 39a1 is not less than 100 mm. Similarly, the lowest position is set so that the height of the first connecting portions 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, 39d2, and the second connecting portions 40a1, 40b1, 40c1, 40d1 are not less than 100 mm.

[0087] Thus, even if the height of the first connecting portion 39a1, etc., or the second connecting portion 40a1, etc. is changed, the induced electric field generated inside the processing chamber 15 is not affected. Therefore, when the height of the first connecting portion 39a1, etc., or the second connecting portion 40a1, etc. is changed to control the plasma distribution inside the processing chamber 15, the plasma distribution does not change unexpectedly. Thus, the plasma distribution can be finely adjusted easily.

[0088] In addition, in the present embodiment, for example, the first connecting portion 39a1 is fastened to the first extension portions 39aw and 39ax by bolts 44 and nuts 45, and thus can be easily removed from the first extension portions 39aw and 39ax. Therefore, the height of the first connecting portion 39a1 can be easily changed, thereby making it easy to adjust the plasma distribution. In addition, the first connecting portions 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, 39d2, and the second connecting portions 40a1, 40b1, 40c1, 40d1 can also be easily removed from the corresponding first extension portion and second extension portion. In addition, the fastening means is not limited to the bolts 44 and nuts 45, and any means that can be easily removed can be used.

[0089] Figure 8 It is used for illustration purposes Figure 1 FIG. 2 is a diagram showing an example in which the antenna unit 23 changes the degree of plasma processing. Figure 8 The following is an example of performing ashing as plasma processing on a rectangular substrate G in a substrate processing apparatus 10 in which the heights of the first connecting portions and the second connecting portions of the first antenna portion 39 and the second antenna portion 40 are set to standard heights. In this example, small pieces coated with a resist are placed on a plurality of locations of the rectangular substrate G for evaluation, and the ashing rate of the resist of each small piece is measured.

[0090] First, in Figure 8 (A) shows the distribution of the ashing rate (AR) of the ashing process performed in the substrate processing apparatus 10 in which the heights of the first connecting parts and the second connecting parts of the first antenna part 39 and the second antenna part 40 are set to standard heights. Figure 8 (A) shows the distribution of the ashing rate corresponding to each region of the window member 13 .

[0091] like Figure 8 As shown in (A), the ashing rate increases toward the corner region C, and decreases toward the corner region A. Therefore, in order to improve the distribution of the ashing rate, the ashing rate near the corner region C needs to be reduced.

[0092] Therefore, the side structure portion 40bb and the side structure portion 40bc (see Figure 8 The impedance of second antenna wire 40b of (B)) is increased. Specifically, the height of second connection portion 40b1 of second antenna wire 40b is made higher than the standard height.

[0093] Then, in the substrate processing apparatus 10 , the rectangular substrate G is subjected to an ashing process. Figure 8 (C) represents the change rate of the ash conversion rate of each part when the height of the second connecting portion 40b1 is made higher than the standard height. Figure 8 As shown in (C), it was confirmed that the ashing rate near the corner area C was reduced.

[0094] In addition, as another method, a corner structure portion 39bc (see Figure 8 The impedance of first antenna wire 39b of (D) is increased. Specifically, the heights of first connecting portion 39b1 and first connecting portion 39b2 of first antenna wire 39b are made higher than the standard height.

[0095] Then, in the substrate processing apparatus 10 , the rectangular substrate G is subjected to an ashing process. Figure 8 (E) represents the change rate of the ash rate of each part when the height of the first connecting part 39b1 and the first connecting part 39b2 is higher than the standard height. Figure 8 As shown in (E), it was confirmed that the ashing rate near the corner region C, especially the side region B, was reduced.

[0096] As described above, it can be seen that by changing the height of each first connecting portion and a part of the connecting portions in each second connecting portion of the first antenna portion 39 and the second antenna portion 40, the ashing rate can be locally changed to improve the distribution of the ashing rate. In addition, it can be seen that when the ashing rate of the same area is changed, such as Figure 8 (B) Figure 8As shown in (D), multiple methods can be adopted.

[0097] In addition, in order to improve the distribution of the ashing rate, it is possible to adjust not only the impedance of one antenna line but also the impedance of multiple antenna lines. Figure 8 (A) Similarly, when the ashing rate is higher toward the corner region C and lower toward the corner region A (refer to Fig. 9 (A)), it is necessary to reduce the ashing rate near the corner region C. Therefore, it is also possible to increase the side structure portion 40bb and the side structure portion 40bc (see Fig. 9 The impedance of the second antenna wire 40b of (B)) is adjusted so that the height of the second connecting portion 40b1 is higher than the standard height. Fig. 9 The case of (B) Figure 8 The method of adjusting the ashing rate by adjusting the impedance of one antenna line is similar to the case of (B). In contrast, it is also possible to increase the impedance of the second antenna line 40b and to increase the angle structure portion 39bc (see Fig. 9 The impedance of the first antenna line 39b of (C) is increased. At this time, not only the height of the second connection portion 40b1 is made higher than the standard height, but also the heights of the first connection portions 39b1 and 39b2 are made higher than the standard height. Fig. 9 The example of (C) is a method of adjusting the ashing rate by adjusting the impedance of a plurality of antenna lines.

[0098] In addition, for example, Fig. 9 As shown in (D), when the ashing rate increases toward the side region B and decreases toward the side region D, it is necessary to reduce the ashing rate near the side region B. Therefore, it is also possible to have the side structure portion 40bb and the side structure portion 40ab (see Fig. 9 The impedance of the second antenna wire 40b and the second antenna wire 40a of (E) is increased. In this case, the height of the second connecting portion 40b1 and the second connecting portion 40a1 is made higher than the standard height. In addition, the corner structure portion 39bb, corner structure portion 39ab, corner structure portion 39ac, corner structure portion 39bc (see FIG. 1 ) having corner regions B and C adjacent to the side region B may be made to be larger than the standard height. Fig. 9 The impedance of the first antenna line 39b and the first antenna line 39a is increased. At this time, the heights of the first connecting parts 39a1, 39a2, 39b1 and 39b2 are made higher than the standard height.

[0099] Moreover, for example, Fig.10As shown in (A), when the ashing rate increases toward the corner region B and decreases toward the corner region D, it is necessary to reduce the ashing rate near the corner region B. Therefore, the side structure portion 40aa and the side structure portion 40ab (see Fig.10 In this case, the height of the second connecting portion 40a1 is made higher than the standard height. In addition, it is also possible to increase the impedance of the second antenna wire 40a and to increase the angle structure portion 39ab (see Fig.10 The impedance of the first antenna line 39a of (C)) is increased. At this time, not only the height of the second connection portion 40a1 is made higher than the standard height, but also the heights of the first connection portions 39a1 and 39a2 are made higher than the standard height.

[0100] In addition, for example, Fig.10 As shown in (D), when the ashing rate increases toward the side region A and decreases toward the side region C, it is necessary to reduce the ashing rate near the side region A. Therefore, the side structure portion 40aa and the side structure portion 40da (see Fig.10 The impedance of the second antenna wire 40a and the second antenna wire 40d of (E) is increased. In this case, the height of the second connecting portion 40a1 and the second connecting portion 40d1 is made higher than the standard height. In addition, the corner structure portion 39aa, corner structure portion 39da, corner structure portion 39ab, corner structure portion 39db (see Fig.10 The impedance of the first antenna line 39a and the first antenna line 39d is increased. At this time, the heights of the first connecting parts 39a1, 39a2, 39d1 and 39d2 are made higher than the standard height.

[0101] In this way, when the ashing rate is reduced, the height of the first antenna wire, the first connecting portion, and the second connecting portion of the second antenna wire having the corner structure portion and the side structure portion opposite to the region where the ashing rate is reduced can be higher than the standard height. On the other hand, when the ashing rate is increased, the height of the first antenna wire, the first connecting portion, and the second connecting portion of the second antenna wire having the corner structure portion and the side structure portion opposite to the region where the ashing rate is increased can be lower than the standard height. In this case, the impedance of the first antenna wire and the second antenna wire is reduced, and the high-frequency current is increased. Accompanied by this, the induced electric field in the opposite region becomes stronger, the plasma density increases, and the ashing rate is increased.

[0102] In addition, each of the first antenna wires 39a to 39d has two first connecting portions, but when the impedance is changed, it is not necessary to make the heights of the two first connecting portions consistent, and the two first connecting portions may be set to different heights. In addition, it is not necessary to change the heights of both of the two first connecting portions, and it is also possible to change the height of only one of the connecting portions.

[0103] Furthermore, when the impedance of the first antenna line and the second antenna line is changed, the amount of change in the height of the first connecting portion and the second connecting portion is changed according to the required impedance change range. For example, when it is necessary to change the impedance to a large extent, the amount of change in the height of the first connecting portion and the second connecting portion is increased. In addition, when it is not necessary to change the impedance to a large extent, the amount of change in the height of the first connecting portion and the second connecting portion is reduced.

[0104] As mentioned above, although the preferred embodiment of this disclosure was described, this disclosure is not limited to the above-mentioned embodiment, and various deformation|transformation and changes are possible within the range of the summary.

[0105] For example, each of the second antenna wires 40a to 40d has two side structure portions corresponding to two side regions, but may also have three side structure portions corresponding to three side regions. In this case, each of the second antenna wires 40a to 40d has two second connecting portions. In addition, the number of side regions corresponding to each of the second antenna wires 40a to 40d is not limited to two or three. In addition, when the number of corresponding side regions is four and the second antenna wires 40a to 40d are wound around the circumference of the rectangular plane, the intensity of the induced electric field changes in the same manner in all side regions. However, even when the number of corresponding side regions is four and the second antenna wires 40a to 40d are wound around, as long as each of the second antenna wires 40a to 40d is configured for more than one round and the antenna wire corresponds to two side regions or three side regions in the last round, the intensity of the induced electric field in the corresponding side region can be selectively changed.

[0106] In addition, the first antenna wires 39a to 39d each have three corner structures corresponding to three corner regions, but may also have only two corner structures corresponding to two corner regions. In addition, the number of corner regions corresponding to each of the first antenna wires 39a to 39d is not limited to three or two. Moreover, when the number of corresponding corner regions is four and the first antenna wires 39a to 39d are wound around the circumference of the rectangular plane, the intensity of the induced electric field changes in the same manner in all corner regions. However, even when the number of corresponding corner regions is four and the first antenna wires 39a to 39d are wound around, as long as each of the first antenna wires 39a to 39d is configured for more than one circle and the antenna wire corresponds to three corner regions or two corner regions in the last circle, the intensity of the induced electric field in the corresponding corner region can be selectively changed.

[0107] In addition, in the above-mentioned embodiment, when the impedance of the first antenna wire and the second antenna wire is changed, only the height of the first connecting portion and the second connecting portion is changed. However, for example, the impedance of the first antenna wire and the second antenna wire can be reduced by adding a capacitor to the first antenna wire or the second antenna wire. The position where the capacitor is added to the first antenna wire and the second antenna wire is not particularly limited, but it is preferable to provide the capacitor at the first connecting portion and the second connecting portion.

[0108] For example, Fig.11 As shown, in the first antenna wire 39a, the impedance is reduced by providing a capacitor 57a at the first connecting portion 39a2. In the first antenna wire 39b, the impedance is reduced by providing a capacitor 57b at the first connecting portion 39b2. In the first antenna wire 39c, the impedance is reduced by providing a capacitor 57c at the first connecting portion 39c2. In the first antenna wire 39d, the impedance is reduced by providing a capacitor 57d at the first connecting portion 39d2.

[0109] In addition, for example, Fig.12 As shown, in the second antenna wire 40a, the impedance is reduced by providing a capacitor 58a at the second connection portion 40a1. In the second antenna wire 40b, the impedance is reduced by providing a capacitor 58b at the second connection portion 40b1. In the second antenna wire 40c, the impedance is reduced by providing a capacitor 58c at the second connection portion 40c1. In the second antenna wire 40d, the impedance is reduced by providing a capacitor 58d at the second connection portion 40d1.

[0110] As described above, the first connecting part and the second connecting part are configured as a detachable structure. Therefore, the capacitor is added to the first connecting part and the second connecting part by replacing the first connecting part and the second connecting part without a capacitor with the first connecting part and the second connecting part with a capacitor. As a result, the impedance of the first antenna line or the second antenna line can be easily reduced.

[0111] Furthermore, by replacing capacitors with different capacitances with respect to the first connecting portion and the second connecting portion, the impedance of the first antenna wire and the second antenna wire can be changed. On the other hand, a variable capacitor with a variable capacitance can also be provided with respect to the first connecting portion and the second connecting portion. In this case, by changing the capacitance of the variable capacitor, the impedance of the first antenna wire or the second antenna wire can be changed. Therefore, the trouble of replacing the first connecting portion and the second connecting portion in order to change the impedance of the first antenna wire and the second antenna wire can be omitted.

[0112] In addition, if Fig.12 As shown, in the second antenna unit 40, capacitors 58a to 58d may be provided in the second connecting portions 40a1 to 40d1, and the height of the second connecting portions 40a1 to 40d1 may be changed relative to the standard height. In this case, the impedance of the second antenna wires 40a to 40d is roughly adjusted by adding the capacitors 58a to 58d, and the impedance of the second antenna wires 40a to 40d is finely adjusted by changing the height of the second connecting portions 40a1 to 40d1. Thus, the impedance of the second antenna wires 40a to 40d can be adjusted more finely.

[0113] In addition, although Fig.11 Although not shown, in the first antenna portion 39, capacitors 57a to 57d may be provided in the first connecting portions 39a2 to 39d2, and the heights of the first connecting portions 39a2 to 39d2 may be changed relative to the standard height. This allows the impedance of the first antenna wires 39a to 39d to be adjusted more finely.

[0114] In addition, in the first antenna portion 39, the four first antenna wires 39a to 39d are arranged to be staggered by 90° in the circumferential direction of the rectangular plane, but the phase of each first antenna wire 39a to 39d is not limited to 90°. In addition, in the second antenna portion 40, the four second antenna wires 40a to 40d are also arranged to be staggered by 90° in the circumferential direction of the rectangular plane, but the phase of each second antenna wire 40a to 40d is not limited to 90°.

[0115] Furthermore, in the substrate processing apparatus 10 , the window member 13 is made of a dielectric material, but the window member 13 may be made of a plurality of metal sheets insulated from each other.

Claims

1. An inductively coupled antenna that generates plasma by forming an inductive electric field inside a processing container for performing plasma processing on a rectangular substrate, wherein: The inductive coupling antenna includes: a first antenna portion including a plurality of first antenna wires arranged in a spiral shape; and a second antenna portion including a plurality of second antenna wires arranged in a spiral shape. supplying high frequency power to the first antenna unit and the second antenna unit respectively, The first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane. The first antenna wires are arranged so that the phases of the rotation angles with the center of the rectangular plane as the rotation center are mutually offset in the circumferential direction of the rectangular plane, and the second antenna wires are arranged so that the phases of the rotation angles are mutually offset in the circumferential direction, Each of the first antenna wires has: corner structure portions arranged at at least two of the four corners arranged in sequence in the circumferential direction; and a first connecting portion connecting the corner structure portions and arranged in a manner avoiding the side portion between the two corners. Each of the second antenna wires has: each side structure portion is arranged on at least two sides arranged in sequence in the circumferential direction among the four sides; and a second connecting portion connecting the side structure portions and arranged in a manner avoiding the corner portion between the two side portions, Each of the first connection parts and each of the second connection parts is configured to be able to individually adjust a distance of separation from the rectangular plane.

2. The inductively coupled antenna according to claim 1, wherein: A window member is disposed inside the processing container to divide the antenna chamber and the processing chamber. The inductive coupling antenna is disposed in the antenna chamber, and the inductive coupling antenna forms the inductive electric field inside the processing chamber. An adjustment range of a distance between each of the first connection parts and each of the second connection parts and the rectangular plane is limited so that each of the first connection parts and each of the second connection parts does not affect the induced electric field inside the processing chamber.

3. The inductively coupled antenna according to claim 1, wherein: Each of the corner structures of the first antenna wire has a first extension portion at an end portion extending away from the rectangular plane, each of the first extension portions is mounted with the first connection portion, and a separation distance of each of the first connection portions from the rectangular plane is adjusted by changing the mounting position of each of the first connection portions relative to the first extension portions. Each of the side structure portions of the second antenna wire has a second extension portion at the end portion extending away from the rectangular plane, and each of the second connecting portions is installed on the second extension portion. The separation distance of each of the second connecting portions from the rectangular plane is adjusted by changing the installation position of each of the second connecting portions relative to the second extension portions.

4. The inductively coupled antenna according to claim 3, wherein: Each of the first connecting portions is configured to be detachable from each of the first extending portions, and each of the second connecting portions is configured to be detachable from each of the second extending portions.

5. The inductively coupled antenna according to claim 1, wherein: The first antenna portion includes four first antenna lines, each of which has a starting point at each of the corners that are different from each other. The second antenna unit includes four second antenna lines, and each of the second antenna lines has a starting point at each of the sides that are different from each other.

6. A substrate processing apparatus for performing plasma processing on a rectangular substrate, wherein: The substrate processing device comprises: a processing container, which accommodates the rectangular substrate inside; a window member that divides the interior of the processing container into an antenna chamber and a processing chamber; A mounting table, which is arranged inside the processing chamber and mounts the rectangular substrate; as well as an inductive coupling antenna disposed inside the antenna chamber so as to face the mounting table via the window member; The inductive coupling antenna comprises: a first antenna portion which is composed of a plurality of first antenna wires arranged in a spiral shape; and a second antenna portion which is composed of a plurality of second antenna wires arranged in a spiral shape. supplying high frequency power to the first antenna unit and the second antenna unit respectively, The first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane. The first antenna wires are arranged so that the phases of the rotation angles with the center of the rectangular plane as the rotation center are mutually offset in the circumferential direction of the rectangular plane, and the second antenna wires are arranged so that the phases of the rotation angles are mutually offset in the circumferential direction, Each of the first antenna wires has: corner structure portions arranged at at least two of the four corners arranged in sequence in the circumferential direction; and a first connecting portion connecting the corner structure portions and arranged in a manner avoiding the side portion between the two corners. Each of the second antenna wires has: each side structure portion is arranged on at least two sides arranged in sequence in the circumferential direction among the four sides; and a second connecting portion connecting the side structure portions and arranged in a manner avoiding the corner portion between the two side portions, Each of the first connection parts and each of the second connection parts is configured to be able to individually adjust a distance of separation from the rectangular plane.

7. A substrate processing method, wherein the substrate processing method uses a substrate processing device to perform plasma processing on a rectangular substrate, wherein: The substrate processing device comprises: a processing container, which accommodates the rectangular substrate inside; a window member, which divides the inside of the processing container into an antenna chamber and a processing chamber; a mounting table, which is arranged inside the processing chamber and mounts the rectangular substrate; and an inductive coupling antenna, which is arranged inside the antenna chamber in a manner opposite to the mounting table with the window member interposed therebetween. The inductive coupling antenna comprises: a first antenna portion which is composed of a plurality of first antenna wires arranged in a spiral shape; and a second antenna portion which is composed of a plurality of second antenna wires arranged in a spiral shape. The first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane. The first antenna wires are arranged so that the phases of the rotation angles with the center of the rectangular plane as the rotation center are mutually offset in the circumferential direction of the rectangular plane, and the second antenna wires are arranged so that the phases of the rotation angles are mutually offset in the circumferential direction, Each of the first antenna wires has: corner structure portions arranged at at least two of the four corners arranged in sequence in the circumferential direction; and a first connecting portion connecting the corner structure portions and arranged in a manner avoiding the side portion between the two corners. Each of the second antenna lines comprises: side structure portions arranged on at least two of the four side portions arranged in sequence in the circumferential direction; and a second connecting portion connecting the side structure portions and arranged in a manner avoiding the corner between the two side portions. In the substrate processing method, The impedance of at least one of the first connecting portions is changed by changing the distance of separation from the rectangular plane of at least one of the first connecting portions, and / or the impedance of at least one of the second connecting portions is changed by changing the distance of separation from the rectangular plane of at least one of the second connecting portions, supplying high frequency power to the first antenna unit and the second antenna unit respectively to generate an induced electric field inside the processing chamber, introducing a processing gas into the processing chamber, The induced electric field is used to excite the introduced processing gas to generate plasma, The distribution of the induced electric field is affected by the change in the impedance.

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