A semiconductor temporary bonding packaging structure and a preparation method thereof

Abstract

The application discloses a semiconductor temporary bonding packaging structure and a preparation method thereof. The method comprises the following steps: coating a first layer of bonding glue on a substrate; pressing a separable structure on the first layer of bonding glue and solidifying the first layer of bonding glue; coating a second layer of bonding glue on the separable structure; mounting a semiconductor device on the second layer of bonding glue and solidifying the second layer of bonding glue; plastic packaging the mounted semiconductor device; and selecting different redistribution process routes according to the different orientations of the semiconductor device bumps, so as to distribute the redistribution structure on the surface of the plastic packaging material or the second layer of bonding glue. The application does not need to use temporary bonding glue or a temporary bonding film, effectively reduces the temporary bonding cost, and the bonding glue and the separable structure can be used as a passivation layer and an RDL structure in the packaging structure respectively, effectively shortens the temporary bonding process, reduces the packaging cost, and is suitable for the Face-up and Face-down process routes.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor packaging technology, specifically relating to a semiconductor temporary bonding packaging structure and its preparation method. Background Technology

[0002] Moore's Law is slowing down and approaching its physical limits. Simply miniaturizing the size of components is no longer sufficient to meet the high demands of the integrated circuit industry, necessitating advanced packaging technologies to break this deadlock. Currently, semiconductor packaging technology is developing towards larger sizes, thinner profiles, and 3D stacking, such as Info, Cowos, and 3D SiP technologies. These technologies improve packaging integration, reduce size and weight, and enhance system performance, meeting the high-performance and high-efficiency requirements of modern electronic devices. To achieve these advanced packaging structures and ensure chip packaging accuracy and yield, temporary bonding technology has emerged. However, existing temporary bonding technologies use expensive materials, involve numerous processes, and have low efficiency. Summary of the Invention

[0003] To address the technical problems existing in the prior art, the present invention aims to provide a semiconductor temporary bonding packaging structure and its preparation method.

[0004] To achieve the above objectives and technical effects, the technical solution adopted by this invention is as follows:

[0005] A method for fabricating a semiconductor temporary bonding package structure includes the following steps:

[0006] Step 1: Apply the first layer of bonding adhesive to the substrate;

[0007] Step 2: Press the separable structure onto the first layer of bonding adhesive and cure the first layer of bonding adhesive;

[0008] Step 3: Apply a second layer of bonding adhesive to the separable structure;

[0009] Step 4: Mount the semiconductor device on the second layer of bonding adhesive and cure the second layer of bonding adhesive;

[0010] Step 5: Encapsulate the mounted semiconductor devices in plastic;

[0011] Step 6: Select different redistribution process routes according to the different orientations of the bumps of the semiconductor device, so as to distribute the redistribution structure on the surface of the molding compound or the surface of the second bonding adhesive.

[0012] Furthermore, the thickness of the first bonding adhesive layer is greater than 5 micrometers.

[0013] Furthermore, in step four, a face-up process is used to mount semiconductor devices on the second layer of bonding adhesive, with the bumps of the semiconductor devices facing upwards.

[0014] Furthermore, step six, the step of distributing the redistribution structure on the surface of the molding compound, includes:

[0015] Grinding and thinning the molding compound exposes the interface of the semiconductor device;

[0016] The substrate, the first layer of bonding adhesive, the separable structure, and the second layer of bonding adhesive are then separated and peeled off, leaving only the molding compound and the semiconductor devices inside.

[0017] A third layer of bonding adhesive is then applied to the molding compound, and the signals of the semiconductor device are brought out through rewiring, followed by the placement of solder balls.

[0018] Furthermore, in step four, a face-down process is used to mount semiconductor devices on the second layer of bonding adhesive, with the bumps of the semiconductor devices facing downwards.

[0019] Furthermore, step six, the step of distributing the redistribution structure on the surface of the second layer of bonding adhesive, includes:

[0020] Separate and peel off the substrate, the first layer of bonding adhesive, and the separable structure;

[0021] A third layer of bonding adhesive is then applied over the second layer of bonding adhesive. The signals of the semiconductor device are brought out through rewiring, and then solder balls are implanted.

[0022] The present invention also discloses a semiconductor temporary bonding package structure, which is prepared by the semiconductor temporary bonding package structure preparation method described above. The semiconductor temporary bonding package structure includes a molding compound, in which a semiconductor device is mounted, a third layer of bonding adhesive is disposed on the molding compound, a redistribution structure is disposed on the third layer of bonding adhesive, and solder balls are implanted on the redistribution structure.

[0023] The present invention also discloses a semiconductor temporary bonding package structure, which is prepared by the method described above. The semiconductor temporary bonding package structure includes a molding compound, in which a semiconductor device is mounted, a second layer of bonding adhesive is disposed on the molding compound, a third layer of bonding adhesive is disposed on the second layer of bonding adhesive, a redistribution structure is disposed on the third layer of bonding adhesive, and solder balls are deposited on the redistribution structure.

[0024] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0025] This invention discloses a semiconductor temporary bonding packaging structure and its fabrication method. The substrate is bonded to a separable structure via a first layer of bonding adhesive, and the semiconductor device is bonded to the separable structure via a second layer of bonding adhesive. The redistribution structure can be distributed on the surface of the molding compound or the surface of the second layer of bonding adhesive, or distributed on both sides of the semiconductor device via conductive vias, depending on whether the semiconductor device is face-up or face-down in the process. No temporary bonding adhesive or temporary bonding film is required throughout the process, thus avoiding the high cost associated with using temporary bonding adhesive or temporary bonding film in existing temporary bonding technologies. This effectively reduces the cost of temporary bonding. Furthermore, the bonding adhesive and separable structure used in the bonding process can serve as the passivation layer and RDL structure in the packaging structure, respectively, thereby shortening the temporary bonding process, further reducing packaging costs, and improving packaging efficiency. The application scope covers both face-up and face-down process routes, demonstrating broad applicability. Attached Figure Description

[0026] Figure 1 This is a structural schematic diagram of step one of the present invention;

[0027] Figure 2 This is a schematic diagram of the structure of step two of the present invention;

[0028] Figure 3 This is a schematic diagram of step three of the present invention;

[0029] Figure 4 This is a schematic diagram of step four in Embodiment 1 of the present invention;

[0030] Figure 5 This is a schematic diagram of step five in Embodiment 1 of the present invention;

[0031] Figure 6-7 These are schematic diagrams of step six in Embodiment 1 of the present invention;

[0032] Figure 8 This is a schematic diagram of step four in Embodiment 2 of the present invention;

[0033] Figure 9 This is a structural schematic diagram of step five in Embodiment 2 of the present invention;

[0034] Figure 10-11 These are schematic diagrams of step six of Embodiment 2 of the present invention. Detailed Implementation

[0035] The present invention will now be described in detail so that its advantages and features can be more easily understood by those skilled in the art, thereby providing a clearer and more explicit definition of the scope of protection of the present invention.

[0036] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form to prepare for the more detailed descriptions that follow.

[0037] like Figure 1-11 As shown, a method for fabricating a semiconductor temporary bonding package structure includes the following steps:

[0038] Step 1: As Figure 1 As shown, a first layer of bonding adhesive 2 is coated on the substrate 1. The coating method includes, but is not limited to, printing, coating, etc. The thickness of the first layer of bonding adhesive 2 is greater than 5 micrometers.

[0039] Step Two: As Figure 2 As shown, the separable structure 3 is pressed onto the first layer of bonding adhesive 2, and the first layer of bonding adhesive 2 is cured.

[0040] Step 3: As Figure 3 As shown, a second layer of bonding adhesive 4 is coated on the separable structure 3. The second layer of bonding adhesive 4 can be the same or different from the first layer of bonding adhesive 2, and the thickness can be the same or different. It can be flexibly selected according to actual needs.

[0041] Step 4: Mount the semiconductor device 5 on the second layer of bonding adhesive 4 and cure the second layer of bonding adhesive 4;

[0042] Step 5: The mounted semiconductor device 5 is encapsulated using encapsulating material 6, such as encapsulating film, solid encapsulating material (including powder, biscuit), or liquid encapsulating material;

[0043] Step 6: Select different redistribution process routes according to the different orientations of the bumps of the semiconductor device 5, so as to distribute the redistribution structure on the surface of the molding compound 6 or the surface of the second layer of bonding adhesive 4, etc.

[0044] In this invention, the substrate 1 is a flat plate such as a steel plate or glass plate that meets the requirements for roughness and flatness.

[0045] In step four, you can choose either the face-up process route or the face-down process route to mount the semiconductor device.

[0046] Example 1

[0047] A method for fabricating a semiconductor temporary bonding package structure includes the following steps:

[0048] Step 1: As Figure 1As shown, a first layer of bonding adhesive 2 is coated on the steel plate. The coating method includes, but is not limited to, printing and coating. The thickness of the first layer of bonding adhesive 2 is greater than 5 micrometers.

[0049] Step Two: As Figure 2 As shown, the separable structure 3 is pressed onto the first layer of bonding adhesive 2, and the first layer of bonding adhesive 2 is cured.

[0050] Step 3: As Figure 3 As shown, a second layer of bonding adhesive 4 is coated on the separable structure 3. The second layer of bonding adhesive 4 can be different in type and thickness from the first layer of bonding adhesive 2.

[0051] Step Four: As Figure 4 As shown, a face-up process is used to mount semiconductor devices 5 on the second layer of bonding adhesive 4 and then cure the second layer of bonding adhesive 4.

[0052] Step 5: As Figure 5 As shown, the mounted semiconductor device 5 is encapsulated using encapsulating material 6 such as encapsulating film, solid encapsulating material (including powder, cake material) or liquid encapsulating material;

[0053] Step Six: As Figure 6 As shown, the molding compound 6 is thinned by grinding to expose the interface of the semiconductor device 5; as Figure 7 As shown, the substrate 1, the first layer of bonding adhesive 2, the separable structure 3, and the second layer of bonding adhesive 4 are then separated and peeled off, leaving only the molding compound 6 and the semiconductor device 5 inside it. Then, the third layer of bonding adhesive 7 is coated on the molding compound 6, and the signal of the semiconductor device 5 is brought out by the rewiring method. Then, solder balls 8 are implanted.

[0054] A semiconductor temporary bonding package structure includes a molding compound 6, a semiconductor device 5 mounted inside the molding compound 6, a third bonding adhesive 7 disposed on the molding compound 6, a redistribution structure disposed on the third bonding adhesive 7, and solder balls 8 planted on the redistribution structure.

[0055] Example 2

[0056] A method for fabricating a semiconductor temporary bonding package structure includes the following steps:

[0057] Step 1: As Figure 1 As shown, a first layer of bonding adhesive 2 is coated on the steel plate. The coating method includes, but is not limited to, printing and coating. The thickness of the first layer of bonding adhesive 2 is greater than 5 micrometers.

[0058] Step Two: As Figure 2 As shown, the separable structure 3 is pressed onto the first layer of bonding adhesive 2, and the first layer of bonding adhesive 2 is cured.

[0059] Step 3: As Figure 3 As shown, a second layer of bonding adhesive 4 is coated on the separable structure 3. The second layer of bonding adhesive 4 can be different in type and thickness from the first layer of bonding adhesive 2.

[0060] Step Four: As Figure 8 As shown, a face-down process is used to mount semiconductor devices 5 on the second layer of bonding adhesive 4 and then cure the second layer of bonding adhesive 4.

[0061] Step 5: As Figure 9 As shown, the mounted semiconductor device 5 is encapsulated using encapsulating material 6 such as encapsulating film, solid encapsulating material (including powder, cake material) or liquid encapsulating material;

[0062] Step Six: As Figure 10 As shown, the substrate 1, the first layer of bonding adhesive 2, and the separable structure 3 are separated and peeled off; as shown... Figure 11 As shown, a third layer of bonding adhesive 7 is formed by coating the second layer of bonding adhesive 4, and the signal of the semiconductor device 5 is brought out by rewiring, and then solder balls 8 are implanted.

[0063] A semiconductor temporary bonding package structure includes a molding compound 6, a semiconductor device 5 mounted inside the molding compound 6, a second bonding adhesive 4 disposed on the molding compound 6, a third bonding adhesive 7 disposed on the second bonding adhesive 4, a redistribution structure disposed on the third bonding adhesive 7, and solder balls 8 implanted on the redistribution structure.

[0064] Any parts or structures not specifically described in this invention can be made using existing technologies or products, and will not be elaborated upon here.

[0065] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method of fabricating a semiconductor temporary bonding package structure, characterized by, The method comprises the following steps: Step 1: coating a first layer of bonding glue on a substrate; Step 2: pressing a separable structure on the first layer of bonding glue and curing the first layer of bonding glue; Step 3: coating a second layer of bonding glue on the separable structure; Step 4: mounting a semiconductor device on the second layer of bonding glue and curing the second layer of bonding glue; Step 5: plastic packaging the mounted semiconductor device; Step 6: selecting different re-distribution process routes according to the different orientations of the semiconductor device bumps, so as to realize the distribution of the re-distribution structure on the surface of the plastic packaging material or the surface of the second layer of bonding glue; In step 6, the step of distributing the re-distribution structure on the surface of the plastic packaging material comprises: thinning the plastic packaging material by grinding to expose the interface of the semiconductor device; then, the substrate, the first layer of bonding glue, the separable structure and the second layer of bonding glue are separated and peeled off, only the plastic packaging material and the semiconductor device therein are reserved; then, a third layer of bonding glue is coated on the plastic packaging material, the signals of the semiconductor device are led out through the re-distribution mode, and then the tin balls are planted; or In step 6, the step of distributing the re-distribution structure on the surface of the second layer of bonding glue comprises: separating and peeling off the substrate, the first layer of bonding glue and the separable structure; then, a third layer of bonding glue is continuously coated on the second layer of bonding glue, the signals of the semiconductor device are led out through the re-distribution mode, and then the tin balls are planted.

2. The method for fabricating a semiconductor temporary bonding package structure according to claim 1, characterized in that, The thickness of the first layer of bonding glue is greater than 5 microns.

3. The method for fabricating a semiconductor temporary bonding package structure according to claim 1, characterized in that, In step 4, the semiconductor device is mounted on the second layer of bonding glue by using a Face-up process route, and the bumps of the semiconductor device face upward.

4. The method of claim 1, wherein the temporary bonding layer is formed by a method comprising: forming a first layer on a first surface of a first semiconductor wafer; forming a second layer on a second surface of a second semiconductor wafer; and bonding the first layer and the second layer to each other. In step 4, the semiconductor device is mounted on the second layer of bonding glue by using a Face-down process route, and the bumps of the semiconductor device face downward.

5. A semiconductor temporary bonding package structure, characterized by, The semiconductor temporary bonding packaging structure is prepared by using the preparation method of the semiconductor temporary bonding packaging structure according to any one of claims 1-3, the semiconductor temporary bonding packaging structure comprises a plastic packaging material, a semiconductor device is mounted in the plastic packaging material, a third layer of bonding glue is arranged on the plastic packaging material, a re-distribution structure is arranged on the third layer of bonding glue, and tin balls are planted on the re-distribution structure.

6. A semiconductor temporary bonding package structure, characterized by, The semiconductor temporary bonding packaging structure is prepared by using the preparation method of the semiconductor temporary bonding packaging structure according to any one of claims 1, 2 and 4, the semiconductor temporary bonding packaging structure comprises a plastic packaging material, a semiconductor device is mounted in the plastic packaging material, a second layer of bonding glue is arranged on the plastic packaging material, a third layer of bonding glue is arranged on the second layer of bonding glue, a re-distribution structure is arranged on the third layer of bonding glue, and tin balls are planted on the re-distribution structure.

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