Crystal boat structure, semiconductor heat treatment apparatus and control method thereof

Abstract

The application provides a wafer boat structure, a semiconductor heat treatment device and a control method thereof. The wafer boat structure comprises a fixed support with a fixed support part, and an adjusting mechanism arranged on the fixed support. The adjusting mechanism has a plurality of movable auxiliary support parts. The adjusting mechanism has a first state and a second state. When the adjusting mechanism is in the first state, at least two auxiliary support parts are moved to a position in level with the fixed support part. When the adjusting mechanism is in the second state, only one auxiliary support part is moved to a position in level with the fixed support part, so that the one auxiliary support part and the fixed support part jointly support the same wafer. The wafer boat structure of the application can change the number of support points for supporting the wafer by arranging the adjusting mechanism. In use, the number of wafer support points can be adjusted according to the process temperature, so as to avoid slip defects, and also avoid particle scratches and pollution, and improve the yield of the process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more specifically, to a crystal boat structure, semiconductor heat treatment equipment, and control method thereof. Background Technology

[0002] A vertical heat treatment unit is a device used for heat treatment of wafers. For example... Figure 1 As shown, it includes: furnace body 1, process chamber 2, lifting system 3, and crystal boat 4. The process chamber 2 is located inside the furnace body 1, and the crystal boat 4 is located below the furnace body 1 and mounted on the lifting system 3. The lifting system 3 is used to drive the crystal boat 4 to rise into the process chamber 2 or descend from the process chamber 2 to the outside of the furnace body 1.

[0003] When heat-treating the wafer, the wafer boat 4 is first lowered to the outside of the process chamber, then the wafer to be heat-treated is placed on the wafer boat 4, and then the wafer boat 4 is raised into the process chamber 2 for heat treatment. After the heat treatment is completed, the wafer boat 4 is lowered to the outside of the process chamber 2 to cool and then taken out.

[0004] There are some crystal boats such as Figure 2 and Figure 3 As shown, a three-support pillar structure is adopted, that is, the crystal boat 4 is provided with three support pillars 5, and each support pillar 5 is provided with multiple slots 6. The slots 6 on the three support pillars 5 are arranged one-to-one to form a support structure for supporting the wafer. When the crystal boat 4 adopts a three-support pillar structure, there are also three support points on the wafer. During the heat treatment process, the processing temperature in the process chamber 2 will reach above 1150℃. Since there are only three support points on the wafer, the stress generated by gravity at each support point position is relatively large, making the wafer more prone to slip dislocation defects. Summary of the Invention

[0005] The present invention aims to at least solve the problem of slip defects easily generated in wafers during heat treatment in the prior art, and proposes a crystal boat structure, semiconductor heat treatment equipment and control method thereof.

[0006] To achieve the objective of this invention, according to a first aspect of the invention, a wafer boat structure is disclosed, comprising: a fixed support having a fixed support portion; and an adjustment mechanism disposed on the fixed support, the adjustment mechanism having a plurality of movable auxiliary support portions, the adjustment mechanism having a first state and a second state, wherein in the first state, at least two of the auxiliary support portions move to a position flush with the fixed support portion, so that at least two of the auxiliary support portions and the fixed support portion jointly support the same wafer; and in the second state, only one of the auxiliary support portions moves to a position flush with the fixed support portion, so that one of the auxiliary support portions and the fixed support portion jointly support the same wafer.

[0007] Furthermore, the adjustment mechanism includes: a plurality of movable columns, which are movably disposed on the fixed bracket, and an auxiliary support portion disposed on the movable columns. The movable columns move to switch the auxiliary support portion between a position flush with the fixed support portion and a position offset from the fixed support portion.

[0008] Furthermore, the movable column includes: a first movable column and a second movable column; the auxiliary support includes: a first auxiliary support and a second auxiliary support; the first auxiliary support is disposed on the first movable column, and the second auxiliary support is disposed on the second movable column.

[0009] Further, the fixed support portion includes: a first support portion and a second support portion; when the adjustment mechanism is in a first state, the first auxiliary support portion and the second auxiliary support portion are both located at a position flush with the first support portion and the second support portion, so that the first support portion, the second support portion, the first auxiliary support portion, and the second auxiliary support portion jointly support the same wafer; when the adjustment mechanism is in a second state, the first auxiliary support portion moves to a position offset from the first support portion and the second support portion, and the second auxiliary support portion is located at a position flush with the first support portion and the second support portion, so that the first support portion, the second support portion, and the second auxiliary support portion jointly support the same wafer.

[0010] Furthermore, the movable column further includes a third movable column; the auxiliary support portion further includes a third auxiliary support portion disposed on the third movable column; the fixed support portion includes a first support portion and a second support portion; when the adjustment mechanism is in a first state, the first auxiliary support portion and the third auxiliary support portion are both located at a position flush with the first support portion and the second support portion, and the second auxiliary support portion is located at a position offset from the first support portion and the second support portion, so that the first support portion, the second support portion, the first auxiliary support portion, and the third auxiliary support portion jointly support the same wafer; when the adjustment mechanism is in a second state, the first auxiliary support portion and the third auxiliary support portion move to a position offset from the first support portion and the second support portion, and the second auxiliary support portion is located at a position flush with the first support portion and the second support portion, so that the first support portion, the second support portion, and the second auxiliary support portion jointly support the same wafer.

[0011] Furthermore, the first support portion, the second support portion, the first auxiliary support portion, the second auxiliary support portion, and the third auxiliary support portion are distributed circumferentially on the wafer, with the second auxiliary support portion located between the first auxiliary support portion and the third auxiliary support portion.

[0012] Furthermore, the fixed bracket includes: two end plates arranged opposite to each other; two support columns, each of which is connected at both ends to the two end plates, one of which has a first support portion and the other has a second support portion; and two movable columns connected at both ends to the two end plates, which are movable in a direction perpendicular to the end plates, with the two support columns and the movable columns distributed circumferentially around the end plates.

[0013] Furthermore, there are multiple first support portions, which are spaced apart along the axial direction of the support column; the second support portion, the first auxiliary support portion, and the second auxiliary support portion are respectively arranged in a one-to-one correspondence with the first support portion, and a corresponding set of the first support portion, the second support portion, the first auxiliary support portion, and the second auxiliary support portion is used to support the same wafer.

[0014] Furthermore, the adjustment mechanism further includes a driving device connected to the movable column, used to drive the movable column to move so that the auxiliary support part switches between a position flush with the fixed support part and a position offset from the fixed support part.

[0015] Furthermore, in the circumferential direction of the movable column, the movable column is limited to the fixed bracket, and a screw hole is provided at the connection position between the movable column and the driving device; the driving device includes: a motor and a screw rod disposed on the output shaft of the motor, the screw rod being disposed in the screw hole and threadedly engaged with the screw hole, the motor driving the screw rod to rotate, and the rotating screw rod driving the movable column to move along its own axial direction.

[0016] According to a second aspect of the present invention, a semiconductor thermal processing apparatus is also disclosed, comprising: a process chamber; a microenvironment chamber disposed below the process chamber; a lifting device disposed within the microenvironment chamber; and the aforementioned crystal boat structure disposed on the lifting device, the lifting device being used to move the crystal boat structure between the microenvironment chamber and the process chamber.

[0017] According to a third aspect of the present invention, a control method for the above-described semiconductor thermal processing equipment is also disclosed, comprising the following steps: acquiring the current ambient temperature inside the process chamber; comparing the acquired current ambient temperature with a preset temperature; and controlling the state of the adjustment mechanism according to the comparison result.

[0018] When the wafer is in use and is at a high temperature (greater than 800°C), its strength is low. Due to the combined effects of gravitational stress and thermal stress, slip lattice defects are easily generated. At this time, the control and adjustment mechanism is in the first state, and at least two auxiliary support parts move to a position flush with the fixed support part to jointly support the wafer. Since the two auxiliary support parts and the fixed support part have a total of four support points (of which the fixed support part provides two support points), the effects of thermal stress and gravitational stress on the wafer can be dispersed, thereby effectively avoiding the occurrence of slip lattice defects.

[0019] When the wafer needs to be heated from room temperature to a preset temperature or cooled from a preset temperature to room temperature, the wafer will generate a lot of thermal stress due to the large temperature change, which will cause the wafer to deform. At this time, the control and adjustment mechanism is in the second state, that is, only one auxiliary support part moves to a position flush with the fixed support part. Since the auxiliary support part and the fixed support part have a total of three support points, it can be guaranteed that the three support points are necessarily on the same plane. Therefore, it is more stable, the wafer bounce is smaller, it is not easy to form scratches, and effectively avoids wafer contamination.

[0020] Therefore, the crystal boat structure of the present invention can change the number of support points supporting the wafer by setting an adjustment mechanism. In use, the number of wafer support points can be adjusted according to the process temperature, thereby avoiding slippage defects, particle scratches and contamination, and improving the yield of the process. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a vertical heat treatment device in the prior art;

[0022] Figure 2 This is a schematic diagram of a crystal boat with a three-pillar structure in the prior art;

[0023] Figure 3 A top view of a crystal boat with a three-pillar structure in the prior art;

[0024] Figure 4 This is a schematic diagram of the adjustment mechanism of the crystal boat structure in the first state according to Embodiment 1 of the present invention;

[0025] Figure 5 This is a schematic diagram of the adjustment mechanism of the crystal boat structure in the second state according to Embodiment 1 of the present invention;

[0026] Figure 6 This is a cross-sectional view of the top view of the crystal boat structure according to Embodiment 1 of the present invention;

[0027] Figure 7 This is a schematic diagram of the adjustment mechanism of the crystal boat structure in the first state according to Embodiment 2 of the present invention;

[0028] Figure 8 This is a schematic diagram of the adjustment mechanism of the crystal boat structure in the second state according to Embodiment 2 of the present invention;

[0029] Figure 9 This is a cross-sectional view of the top view of the crystal boat structure according to Embodiment 2 of the present invention;

[0030] Figure 10 This is an orthographic projection of the support portion and auxiliary support portion of the crystal boat structure in Embodiment 1 of the present invention on the corresponding support plane;

[0031] Figure 11 for Figure 4 A magnified view of part A in the middle;

[0032] Figure 12 A schematic diagram of the semiconductor heat treatment equipment according to Embodiment 1 of the present invention;

[0033] Figure 13 Flowchart of the control method for semiconductor heat treatment equipment according to Embodiment 1 of the present invention;

[0034] Figure 14 A detailed flowchart of step S20 in the control method of the semiconductor heat treatment equipment according to Embodiment 1 of the present invention;

[0035] List of reference numerals in the attached diagram:

[0036] 10. Fixed bracket; 11. End plate; 111. Through hole; 112. Limiting groove; 12. Support column; 121. First support part; 122. Second support part; 20. Support plane; 30. Adjustment mechanism; 31. Auxiliary support part; 31a. First auxiliary support part; 31b. Second auxiliary support part; 31c. Third auxiliary support part; 32. Moving column; 321. Screw hole; 322. Limiting protrusion; 32a. First moving column; 32b. Second moving column; 32c. Third moving column; 33. Drive device; 331. Motor; 332. Screw; 40. Furnace body; 41. Process chamber; 50. Microenvironment chamber; 60. Lifting device. Detailed Implementation

[0037] To enable those skilled in the art to better understand the technical solutions of the present invention, the crystal boat structure, semiconductor heat treatment equipment and control method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0038] To achieve the objectives of this invention, such as Figures 4 to 6 The first embodiment shown discloses a crystal boat structure, including: a fixed support 10 and an adjustment mechanism 30.

[0039] The fixed support 10 has a fixed support portion for supporting the wafer. The adjustment mechanism 30 is disposed on the fixed support 10. The adjustment mechanism 30 has multiple independently movable auxiliary support portions 31 and has a first state and a second state.

[0040] In the first state of the adjustment mechanism 30, at least two auxiliary support parts 31 move to a position flush with the fixed support part, so that at least two auxiliary support parts 31 and the fixed support part jointly support the same wafer; in the second state of the adjustment mechanism 30, only one auxiliary support part 31 moves to a position flush with the fixed support part, so that one auxiliary support part 31 and the fixed support part jointly support the same wafer.

[0041] like Figure 4 As shown, in this embodiment, the fixed support includes a first support 121 and a second support 122, which are spaced apart on a support plane 20. The support plane 20 refers to the plane containing the lower surface of the wafer when the first support 121 and the second support 122 jointly support the same wafer. And as... Figure 8 As shown, the orthographic projections of all auxiliary support parts 31 on the support plane 20 are distributed circumferentially.

[0042] In other words, when the adjusting mechanism 30 is in the first state, at least two auxiliary support parts 31 move to a position flush with the first support part 121 and the second support part 122. Figure 4 The position of the support plane 20 is such that the first support portion 121, the second support portion 122 and at least two auxiliary support portions 31 are located on the same support plane 20 to jointly support the same wafer.

[0043] like Figure 5 As shown, when the adjustment mechanism 30 is in the second state, only one auxiliary support 31 moves to a position flush with the first support 121 and the second support 122, while the other auxiliary support 31s move to positions offset from the first support 121 and the second support 122, meaning only one auxiliary support 31 is located at... Figure 5 On the supporting plane 20, other auxiliary support parts 31 detached. Figure 5 The support plane 20 in the middle is such that the first support part 121, the second support part 122 and an auxiliary support part 31 are located on the same support plane 20 so as to jointly support the same wafer.

[0044] When the wafer is in use, it is at a high temperature (greater than 800°C) and its strength is low. Due to the combined effect of gravitational stress and thermal stress, slip lattice defects are easily generated. At this time, the control and adjustment mechanism 30 is in the first state, that is, the fixed support part and at least two auxiliary support parts 31 are located on the same support plane 20 to jointly support the wafer. Since there are at least four support points (of which the first support part 121 and the second support part 122 in the fixed support part each provide a support point), the effects of thermal stress and gravitational stress on the wafer can be dispersed, thereby effectively avoiding the occurrence of slip lattice defects.

[0045] When the wafer needs to be heated from room temperature to a preset temperature or cooled from a preset temperature to room temperature, the wafer will generate a lot of thermal stress due to the large temperature change, which will cause the wafer to deform. At this time, the control and adjustment mechanism 30 is in the second state, that is, the fixed support part and an auxiliary support part 31 are located on the same support plane 20 to jointly support the wafer. Since it is a three-point support (wherein, the first support part 121 and the second support part 122 in the fixed support part each provide a support point), the three support points must be located in the same plane and can be supported on the wafer surface at the same time, making the wafer more stable, less prone to vibration, less likely to form scratches, and effectively avoiding wafer contamination.

[0046] Therefore, the crystal boat structure of the present invention can change the number of support points supporting the wafer by setting the adjustment mechanism 30. In use, the number of wafer support points can be adjusted according to the process temperature, thereby avoiding slippage defects, particle scratches and contamination, and improving the yield of the process.

[0047] Furthermore, the adjustment mechanism 30 includes: multiple movable columns 32, which are movably mounted on the fixed support 10. The axes of all movable columns 32 are perpendicular to the support plane 20, and the direction of movement of the movable columns 32 is the direction of their axes. Each movable column 32 can move independently. An auxiliary support 31 is mounted on the movable columns 32, and the movable columns 32 move to switch between a position flush with the fixed support and a position offset from the fixed support.

[0048] Specifically, in such Figure 4 In the illustrated embodiment, the movable column 32 includes a first movable column 32a, a second movable column 32b, and a third movable column 32c. The auxiliary support part 31 includes a first auxiliary support part 31a, a second auxiliary support part 31b, and a third auxiliary support part 31c. The first auxiliary support part 31a is disposed on the first movable column 32a, the second auxiliary support part 31b is disposed on the second movable column 32b, and the third auxiliary support part 31c is disposed on the third movable column 32c. It is understood that each movable column 32 can move independently.

[0049] like Figure 4 As shown, in the first state of the adjusting mechanism 30, the first moving column 32a moves the first auxiliary support 31a to a position flush with the fixed support by moving the first moving column 32a. Figure 4 At the position of the central support plane 20, the third movable column 32c moves the third auxiliary support part 31c to a position flush with the fixed support part by moving it. Figure 4 The second moving column 32b moves the second auxiliary support part 31b to a position offset from the fixed support part by moving the support plane 20. Figure 4 The first support part 121, the second support part 122, the first auxiliary support part 31a and the third auxiliary support part 31c are positioned at a distance below the central support plane 20, so that the wafer is supported by four support points.

[0050] like Figure 5 As shown, in the second state of the adjusting mechanism 30, the first moving column 32a moves the first auxiliary support 31a to a position offset from the fixed support by moving the first moving column 32a. Figure 5 At a distance below the central support plane 20, the third movable column 32c moves, causing the third auxiliary support part 31c to move to a position offset from the fixed support part. Figure 5 At a distance below the central support plane 20, the second movable column 32b moves, causing the second auxiliary support part 31b to move to a position flush with the fixed support part. Figure 5 The position of the central support plane 20 is such that the first support part 121, the second support part 122, and the second auxiliary support part 31b are located on the same support plane 20, thereby achieving the purpose of supporting the wafer through three support points.

[0051] It should be noted that in this embodiment, in the first state of the adjustment mechanism 30, the second auxiliary support 31b is located at a position offset from the fixed support, that is, it is detached from the support plane 20. However, this is not limiting. In some other embodiments not shown in the figure, in the first state of the adjustment mechanism 30, the second auxiliary support 31b may also be located at a position flush with the fixed support. That is, in the first state of the adjustment mechanism 30, the second auxiliary support 31b may also be located on the same support plane 20 as the first support 121, the second support 122, the first auxiliary support 31a, and the third auxiliary support 31c. This achieves the purpose of supporting the wafer through five support points, further dispersing the effects of thermal stress and gravitational stress on the wafer, thereby further reducing the occurrence of slip lattice defects.

[0052] It should also be noted that in the above embodiment one, the movable column 32 includes a first movable column 32a, a second movable column 32b, and a third movable column 32c, and the auxiliary support part 31 includes a first auxiliary support part 31a, a second auxiliary support part 31b, and a third auxiliary support part 31c, but this is not limiting. Figures 7 to 9 The second embodiment shown discloses a crystal boat structure, which is basically the same as the first embodiment. The difference is that in this embodiment, the movable column 32 includes a first movable column 32a and a second movable column 32b, and the auxiliary support part 31 includes a first auxiliary support part 31a and a second auxiliary support part 31b; the first auxiliary support part 31a is disposed on the first movable column 32a, and the second auxiliary support part 31b is disposed on the second movable column 32b.

[0053] like Figure 7 As shown, in the first state of the adjusting mechanism 30, both the first auxiliary support 31a and the second auxiliary support 31b are positioned flush with the fixed support, i.e. Figure 7 The first support part 121, the second support part 122, the first auxiliary support part 31a and the second auxiliary support part 31b are located on the same support plane 20.

[0054] like Figure 8 As shown, in the second state of the adjusting mechanism 30, the first auxiliary support 31a moves to a position offset from the fixed support, i.e. Figure 8 At a distance below the central support plane 20, the second auxiliary support parts 31b are all located at the same level as the fixed support parts, i.e. Figure 8 The first support part 121, the second support part 122, and the second auxiliary support part 31b are located on the same support plane 20.

[0055] In this second embodiment, the switching between three support points and four support points can also be achieved by using two movable columns 32, thereby avoiding slippage defects, particle scratches and contamination, improving the yield of the process, and the structure is relatively simple, with lower modification costs and easier implementation.

[0056] To better support the wafer, Figure 10 In the first embodiment shown, the first support portion 121, the second support portion 122, the first auxiliary support portion 31a, the second auxiliary support portion 31b, and the third auxiliary support portion 31c are circumferentially spaced on the support plane 20, with the second auxiliary support portion 31b located between the first auxiliary support portion 31a and the third auxiliary support portion 31c. This support method results in more uniform stress on the wafer, better balance, and effectively prevents wafer slippage and sliding, thereby improving process yield.

[0057] In such Figure 4 and Figure 5 In the first embodiment shown, the fixed bracket 10 includes an end plate 11 and two support columns 12. There are two end plates 11, which are arranged opposite to each other. The two ends of each support column 12 are respectively connected to the two end plates 11. One support column 12 is provided with a first support part 121, and the other support column 12 is provided with a second support part 122. The two ends of the movable column 32 are respectively connected to the two end plates 11. The movable column 32 is movable in the direction perpendicular to the end plate 11. The two support columns 12 and the movable column 32 are distributed circumferentially around the end plates 11.

[0058] like Figure 4 As shown, the adjustment mechanism 30 also includes a drive device 33, which is drivenly connected to the moving column 32 and is used to drive the moving column 32 to move along the direction of the vertical support plane 20 so that the auxiliary support part 31 switches between a position flush with the fixed support part and a position offset from the fixed support part.

[0059] It should be noted that in this embodiment, there are three driving devices 33. The first moving column 32a, the second moving column 32b and the third moving column 32c are respectively driven and connected to one driving device 33, thereby realizing the independent movement of the moving column 32.

[0060] like Figure 4 As shown, in the circumferential direction of the movable column 32, the movable column 32 is limited to the fixed bracket 10. That is, each movable column 32 cannot rotate relative to the fixed bracket 10 along its own axis; it can only move along its own axial direction. Specifically, as... Figure 11 As shown, the first end of the movable column 32 is located in the through hole 111 opened on the end plate 11. A limiting groove 112 is provided on the inner wall of the through hole 111. The limiting groove 112 extends along the axial direction of the through hole 111 (that is, the axial direction of the movable column 32) to both ends of the through hole 111. A limiting protrusion 322 that cooperates with the limiting groove 112 is provided on the outer wall of the movable column 32 near the first end. When the first end of the movable column 32 is located in the through hole 111, the limiting protrusion 322 is located in the limiting groove 112, and the limiting protrusion 322 can move along the limiting groove 112. At the same time, the limiting groove 112 and the limiting protrusion 322 restrict the movable column 32 from rotating along its own axis.

[0061] like Figure 11As shown, a screw hole 321 is provided at the connection position between the movable column 32 and the drive device 33. The drive device 33 includes a motor 331 and a screw 332 disposed on the output shaft of the motor 331. The screw 332 is disposed in the screw hole 321 and threadedly engaged with the screw hole 321. The motor 331 drives the screw 332 to rotate, and the rotating screw 332 drives the movable column 32 to move along its own axis. That is to say, in use, the motor 331 can drive the screw 332 to rotate, and the rotating screw 332, through its threaded engagement with the screw hole 321, pushes the movable column 32 to move along its own axis, thereby causing the movable column 32 to move the auxiliary support part 31 between a position flush with the fixed support part and a position offset from the fixed support part.

[0062] like Figure 4 and Figure 5 As shown, there are multiple sets of fixed support parts, which are spaced apart on the fixed bracket 10 along the direction perpendicular to the support plane 20. There are also multiple sets of auxiliary support parts 31, which are spaced apart along the axis of the movable column 32. The fixed support parts and auxiliary support parts 31 correspond one-to-one. That is, in the two support columns 12, one support column 12 has multiple first support parts 121 spaced apart along its own axis, and the other support column 12 has multiple second support parts 122 spaced apart along its own axis. Correspondingly, the first movable column 32a has multiple first auxiliary support parts 31a spaced apart along its own axis, the second movable column 32b has multiple second auxiliary support parts 31b spaced apart along its own axis, and the third movable column 32c has multiple third auxiliary support parts 31c spaced apart along its own axis. Furthermore, the first support parts 121, second support parts 122, first auxiliary support parts 31a, second auxiliary support parts 31b, and third auxiliary support parts 31c are arranged in a one-to-one correspondence. The corresponding first support portion 121, second support portion 122, first auxiliary support portion 31a, second auxiliary support portion 31b, and third auxiliary support portion 31c are used to support the same wafer. All the first support portion 121, second support portion 122, first auxiliary support portion 31a, second auxiliary support portion 31b, and third auxiliary support portion 31c are used to support multiple wafers that are spaced apart.

[0063] It is understandable that, such as Figure 4As shown, in the first state of the adjustment mechanism 30, the first moving column 32a moves all the first auxiliary support parts 31a to a position flush with their respective fixed support parts, and the third moving column 32c moves all the third auxiliary support parts 31c to a position flush with their respective fixed support parts. At the same time, the second moving column 32b moves all the second auxiliary support parts 31b to a position offset from their respective fixed support parts, so that all the corresponding first support parts 121, second support parts 122, first auxiliary support parts 31a and third auxiliary support parts 31c are located on the same support plane 20, thereby adjusting the support method of all wafers to four support points.

[0064] Similarly, such as Figure 5 As shown, in the second state of the adjustment mechanism 30, the first moving column 32a moves all the first auxiliary support parts 31a to a position offset from the corresponding fixed support parts. The third moving column 32c moves the third auxiliary support parts 31c to a position offset from their respective corresponding fixed support parts. At the same time, the second moving column 32b moves the second auxiliary support parts 31b to a position flush with their respective corresponding fixed support parts, so that the corresponding first support parts 121, second support parts 122 and second auxiliary support parts 31b are located on the same support plane 20, thereby adjusting the support method of all wafers to three support points.

[0065] It is understood that in the above embodiments, the support portion and the auxiliary support portion 31 are slots for placing wafers.

[0066] In such Figure 12 In the first embodiment shown, a semiconductor thermal processing apparatus is also disclosed, including: a process chamber 41, a microenvironment chamber 50, a lifting device 60, and the above-mentioned crystal boat structure.

[0067] The furnace body 40 is located outside the process chamber 41; the microenvironment chamber 50 is located below the process chamber 41 and is connected to the process chamber 41; the lifting device 60 is located inside the microenvironment chamber 50; the crystal boat structure is located on the lifting device 60, and the lifting device 60 moves the crystal boat structure between the process chamber 41 and the microenvironment chamber 50 by lifting.

[0068] In this embodiment, the semiconductor heat treatment equipment can be a vertical heat treatment device, but this is not limiting. In some other embodiments not shown in the figure, other heat treatment equipment can also be used.

[0069] The semiconductor heat treatment equipment of the present invention can change the number of support points supporting the wafer by setting the adjustment mechanism 30. During use, the number of wafer support points can be adjusted according to the process temperature, thereby avoiding slippage defects, particle scratches and contamination, and improving the yield of the process.

[0070] like Figure 13 As shown, the present invention also discloses a control method for the above-mentioned semiconductor heat treatment equipment, comprising the following steps:

[0071] S10: Obtain the current ambient temperature T1 inside the process chamber 41;

[0072] S20: Compare the current ambient temperature T1 with the preset temperature T2, and control the state of the regulating mechanism 30 according to the comparison result.

[0073] Furthermore, such as Figure 14 As shown, step S20 specifically includes the following steps:

[0074] S21: If T1 > T2, the control adjustment mechanism 30 is in the first state;

[0075] S22: If T1≤T2, the control adjustment mechanism 30 is in the second state, where the value of T1 is in the range of 600~800℃.

[0076] When in use, when T1 > T2 and the wafer boat 4 carrying the wafer is located in the process chamber 41, that is, the temperature of the wafer is higher than the preset temperature (greater than 600-800℃), the high temperature will cause the strength of the wafer to decrease. Due to the combined effect of gravitational stress and thermal stress, slip lattice defects are easily generated. At this time, the control and adjustment mechanism 30 is in the first state, that is, the first support part 121, the second support part 122 and at least two auxiliary support parts 31 are located on the same support plane 20 to jointly support the wafer. Since there are at least four support points, the effects of thermal stress and gravitational stress on the wafer can be dispersed, thereby effectively avoiding the occurrence of slip lattice defects.

[0077] When T1≤T2, that is, when the wafer needs to be loaded from the room temperature microenvironment chamber 50 into the process chamber 41 and heated to the preset temperature or cooled from the preset temperature to room temperature, the wafer will generate a large thermal stress due to the large temperature change, which will cause the wafer to deform. At this time, the control and adjustment mechanism 30 is in the second state, that is, the first support part 121, the second support part 122 and an auxiliary support part 31 are located on the same support plane 20 to jointly support the wafer. Since it is a three-point support, it is more stable, the wafer bounce is smaller, it is not easy to form scratches, and wafer contamination is effectively avoided.

[0078] Therefore, the vertical heat treatment apparatus of the present invention can change the number of support points supporting the wafer by setting the adjustment mechanism 30. During use, the number of wafer support points can be adjusted according to the process temperature, thereby avoiding slippage defects, particle scratches and contamination, and improving the yield of the process.

[0079] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A crystal boat structure, characterized in that, include: The fixed bracket (10) has a fixed support part; An adjustment mechanism (30) is provided on the fixed bracket (10), and the adjustment mechanism (30) has a plurality of movable auxiliary support parts (31). The adjustment mechanism (30) includes: a plurality of movable columns (32), the plurality of movable columns (32) being movably disposed on the fixed support (10), the auxiliary support (31) being disposed on the movable columns (32), the movable columns (32) moving along their own axial direction to move the auxiliary support (31) to a position flush with the fixed support, so that at least two of the auxiliary support (31) and the fixed support jointly support the same wafer; and moving along their own axial direction to move the auxiliary support (31) to a position offset from the fixed support, so that one of the auxiliary support (31) and the fixed support jointly support the same wafer.

2. The crystal boat structure according to claim 1, characterized in that, The movable column (32) includes: a first movable column (32a) and a second movable column (32b); The auxiliary support part (31) includes: a first auxiliary support part (31a) and a second auxiliary support part (31b). The first auxiliary support (31a) is disposed on the first movable column (32a), and the second auxiliary support (31b) is disposed on the second movable column (32b).

3. The crystal boat structure according to claim 2, characterized in that, The fixed support includes: a first support (121) and a second support (122); When the adjustment mechanism (30) is in the first state, the first auxiliary support (31a) and the second auxiliary support (31b) are both located at the same level as the first support (121) and the second support (122), so that the first support (121), the second support (122), the first auxiliary support (31a) and the second auxiliary support (31b) jointly support the same wafer; When the adjustment mechanism (30) is in the second state, the first auxiliary support (31a) moves to a position offset from the first support (121) and the second support (122), and the second auxiliary support (31b) is located at a position flush with the first support (121) and the second support (122), so that the first support (121), the second support (122) and the second auxiliary support (31b) jointly support the same wafer.

4. The crystal boat structure according to claim 2, characterized in that, The movable column (32) further includes: a third movable column (32c); The auxiliary support (31) also includes a third auxiliary support (31c) disposed on the third movable column (32c). The fixed support includes: a first support (121) and a second support (122); When the adjustment mechanism (30) is in the first state, the first auxiliary support (31a) and the third auxiliary support (31c) are both located at the same level as the first support (121) and the second support (122), and the second auxiliary support (31b) is located at a position offset from the first support (121) and the second support (122), so that the first support (121), the second support (122), the first auxiliary support (31a) and the third auxiliary support (31c) jointly support the same wafer; When the adjustment mechanism (30) is in the second state, the first auxiliary support (31a) and the third auxiliary support (31c) move to a position offset from the first support (121) and the second support (122), and the second auxiliary support (31b) is located at a position flush with the first support (121) and the second support (122), so that the first support (121), the second support (122) and the second auxiliary support (31b) jointly support the same wafer.

5. The crystal boat structure according to claim 4, characterized in that, The first support portion (121), the second support portion (122), the first auxiliary support portion (31a), the second auxiliary support portion (31b), and the third auxiliary support portion (31c) are distributed circumferentially on the wafer, with the second auxiliary support portion (31b) located between the first auxiliary support portion (31a) and the third auxiliary support portion (31c).

6. The crystal boat structure according to claim 3, characterized in that, The fixed bracket (10) includes: End plate (11), there are two end plates (11), and the two end plates (11) are arranged opposite to each other; Support column (12), there are two support columns (12), and the two ends of each support column (12) are respectively connected to the two end plates (11). One of the support columns (12) is provided with the first support part (121), and the other support column (12) is provided with the second support part (122). The two ends of the movable column (32) are respectively connected to the two end plates (11). The movable column (32) is movable in a direction perpendicular to the end plate (11). The two support columns (12) and the movable column (32) are distributed circumferentially along the end plate (11).

7. The crystal boat structure according to claim 6, characterized in that, There are multiple first support parts (121), and the multiple first support parts (121) are spaced apart along the axial direction of the support column (12); The second support part (122), the first auxiliary support part (31a), and the second auxiliary support part (31b) are respectively provided in a one-to-one correspondence with the first support part (121). A corresponding set of the first support portion (121), the second support portion (122), the first auxiliary support portion (31a), and the second auxiliary support portion (31b) are used to support the same wafer.

8. The crystal boat structure according to claim 1, characterized in that, The adjustment mechanism (30) further includes: A drive device (33) is connected to the movable column (32) and is used to drive the movable column (32) to move so that the auxiliary support (31) switches between a position flush with the fixed support and a position offset from the fixed support.

9. The crystal boat structure according to claim 8, characterized in that, In the circumferential direction of the movable column (32), the movable column (32) is limited to the fixed bracket (10), and a screw hole (321) is provided at the connection position between the movable column (32) and the driving device (33). The driving device (33) includes a motor (331) and a screw (332) disposed on the output shaft of the motor (331). The screw (332) is disposed in the screw hole (321) and threadedly engaged with the screw hole (321). The motor (331) drives the screw (332) to rotate, and the rotating screw (332) drives the moving column (32) to move along its own axis.

10. A semiconductor heat treatment apparatus, characterized in that, include: Process chamber (41); A microenvironment chamber (50) is disposed below the process chamber (41); A lifting device (60) is installed inside the microenvironment chamber (50); The crystal boat structure according to any one of claims 1 to 9 is disposed on the lifting device (60), the lifting device (60) being used to move the crystal boat structure between the microenvironment chamber (50) and the process chamber (41).

11. A control method for the semiconductor thermal processing apparatus of claim 10, characterized in that, Includes the following steps: Obtain the current ambient temperature inside the process chamber (41); The current ambient temperature is compared with the preset temperature, and the state of the adjustment mechanism (30) is controlled according to the comparison result.

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