A method for transferring a SiC epitaxial substrate

Abstract

The application relates to the technical field of semiconductors, in particular to a SiC epitaxial substrate conveying method, which separately adopts an edge finder, a deviation rectifying platform and a merging and splitting module to independently position and find edges of a wafer, a graphite ring and the graphite ring, adopts the merging and splitting module and a mechanical hand to complete merging and splitting of the graphite ring and the wafer or the graphite disc, and the mechanical hand transfers the merged wafer, the graphite ring and the graphite disc to an epitaxial growth environment; the wafer, the graphite ring and the graphite disc can all independently complete edge finding and deviation rectifying, the mechanical hand can only execute fixed wafer, graphite ring or graphite disc grabbing or placing actions, the wafer, the graphite ring and the graphite disc can be accurately merged or split, the wafer can be accurately positioned, the whole of the merged wafer, the graphite ring and the graphite disc can be transferred to the epitaxial growth environment through the mechanical hand, and wafer processing quality is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a SiC epitaxial substrate conveying method. BACKGROUND

[0002] Generally, by repeatedly performing a plurality of unit processes, such as exposure process, etching process, diffusion process, deposition process and metal process, on a wafer, a wafer manufacturing process of a semiconductor element is carried out, and the wafer loaded on a carrier in a facility is introduced or taken out by a wafer conveying device.

[0003] The wafer conveying device is equipped with a robot which supports the wafer at the front end of the arm, and the wafer is conveyed in the state of being supported by the robot. The wafer is supported by a carrier during wafer conveying, which facilitates the wafer to be smoothly loaded into an epitaxial device. However, there is an error in the installation of the wafer and the carrier, and it is difficult to ensure the positioning accuracy of the wafer and to ensure the processing quality. SUMMARY

[0004] The present application provides a SiC epitaxial substrate conveying method, which can independently complete edge finding and correction for the wafer, the graphite ring and the graphite disc, accurately realize the merging or splitting of the graphite ring and the wafer or the graphite disc, and smoothly place the wafer into an epitaxial growth environment, thereby ensuring the processing quality of the wafer.

[0005] In order to solve the above technical problems, the present application adopts the following technical scheme:

[0006] A SiC epitaxial substrate conveying method comprises the following steps:

[0007] S01, an edge finder is provided, the edge finder is provided with a first positioning reference, the edge finder performs edge finding and correction on the wafer according to the first positioning reference to determine the position and angle of the wafer;

[0008] S02, a correction platform is provided, the correction platform is provided with a second positioning reference, the correction platform performs edge finding and correction on the graphite disc according to the second positioning reference to determine the position and angle of the graphite disc;

[0009] S03, a merging and splitting module is provided, the merging and splitting module is provided with a third positioning reference, the merging and splitting module performs edge finding and correction on the graphite ring according to the third positioning reference to determine the position and angle of the graphite ring;

[0010] S04, a robot is used to grab the wafer and place it in the merging and splitting module, so that the center position and the bevel of the wafer and the graphite ring are consistent, and the merging and splitting module is used to merge the wafer and the graphite ring;

[0011] S05, the mechanical hand is used to grab the graphite disc and is placed in the merging and splitting module, so that the center position and the bevel edge of the graphite disc and the graphite ring are consistent, the merging and splitting module is used to merge the graphite disc and the graphite ring, and the mechanical hand is used to place the merged wafer, graphite ring and graphite disc into an epitaxial growth environment;

[0012] S06, the mechanical hand is used to take out the wafer, graphite ring and graphite disc in the merging state from the epitaxial growth environment and place them in the merging and splitting module;

[0013] S07, the merging and splitting module is used to separate the graphite disc and the graphite ring, and the mechanical hand is used to place the graphite disc on the edge finding of the correction platform, so that the graphite ring is supported on the merging and splitting module;

[0014] S08, in step S07, a loading box is provided, the merging and splitting module is used to separate the wafer and the graphite ring, and the mechanical hand is used to load the wafer separated from the graphite ring into the loading box;

[0015] S09, in step S07, a disc-ring placement box for storing the combination of the graphite disc and the graphite ring is provided, the mechanical hand is used to load the graphite disc at the edge finding of the correction platform into the merging and splitting module, the merging and splitting module is used to merge the graphite disc and the graphite ring, and the mechanical hand is used to load the merged graphite disc and graphite ring into the disc-ring placement box.

[0016] The mechanical hand is used to grab or place the wafer, graphite ring or graphite disc;

[0017] When the wafer, graphite ring and graphite disc are merged, the mechanical hand grabs or places the graphite disc to realize the overall transfer of the wafer, graphite ring and graphite disc;

[0018] When the wafer and the graphite ring are merged, the mechanical hand grabs or places the graphite ring to realize the overall transfer of the wafer and the graphite ring;

[0019] When the graphite ring and the graphite disc are merged, the mechanical hand grabs or places the graphite disc to realize the overall transfer of the graphite ring and the graphite disc.

[0020] In step S02, the edge finding of the graphite disc is performed by using the edge finding platform, the edge finding platform comprises an edge finding table, an edge finding driving mechanism in driving connection with the edge finding table, an edge finding ring-shaped light source and an edge finding collector, the edge finding driving mechanism is used to drive the edge finding table to move along the X-axis and the Y-axis and make the edge finding table rotate, the edge finding ring-shaped light source is located between the edge finding table and the edge finding collector, and the edge finding collector corresponds to the edge finding ring-shaped light source;

[0021] When the graphite disc is edged, the mechanical arm picks up the graphite disc and places it on the deviation platform, the graphite disc is supported by the deviation platform, the deviation annular light source supplements light for the graphite disc, the deviation collector takes a picture to determine the position and angle of the graphite disc, and the deviation driving mechanism drives the deviation platform to move along the X-axis and / or the Y-axis according to the data obtained by the deviation collector, and rotates the deviation platform to make the graphite disc determine its position and angle according to the second positioning reference.

[0022] In step S03, the merging and splitting module comprises a chassis, a plurality of ring holders connected to the top end of the chassis, a tray and a jacking mechanism, the ring holders are distributed circumferentially on the chassis, the jacking mechanism is drivingly connected with the tray, the chassis is penetrated by a movable opening from top to bottom, the output end of the jacking mechanism is arranged in the movable opening, and the jacking mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring holder.

[0023] When it is needed to separate the graphite disc from the graphite ring, the jacking mechanism drives the tray to move upward to a required height, the mechanical arm puts the combination of the graphite disc and the graphite ring into the merging and splitting module, the graphite ring and the graphite disc are respectively supported by the ring holder and the tray, and the jacking mechanism drives the tray to move downward, so that the graphite disc moves downward synchronously with the tray to separate from the graphite ring.

[0024] The merging and splitting module further comprises a splitting and merging driving mechanism, a splitting and merging annular light source, a surface light source and an acquisition device, the splitting and merging driving mechanism is used to drive the chassis to move along the X-axis and the Y-axis, and rotate the chassis, the splitting and merging annular light source is located between the chassis and the surface light source, and the front end of the acquisition device penetrates through the surface light source and corresponds to the splitting and merging annular light source.

[0025] When the graphite ring is edged, the ring holder supports the graphite ring, the surface light source and the splitting and merging annular light source supplement light for the graphite ring and the acquisition device, the acquisition device takes a picture to determine the position and angle of the graphite ring, and the splitting and merging driving mechanism drives the chassis to move along the X-axis and / or the Y-axis according to the data obtained by the acquisition device, and rotates the chassis to adjust the position and angle of the ring holder and the graphite ring, so that the graphite ring determines its position and angle according to the third positioning reference.

[0026] When it is needed to merge the wafer with the graphite ring, the ring holder supports the already edged graphite ring, the jacking mechanism drives the tray to move upward to a required height inside the graphite ring, the mechanical arm puts the wafer into the tray, so that the wafer and the graphite ring have consistent center position and bevel orientation, and the jacking mechanism drives the wafer to synchronously descend, so that the wafer is supported by the graphite ring, and the wafer and the graphite ring are merged.

[0027] The disassembly and assembly driving mechanism comprises a disassembly X-axis module, a disassembly Y-axis module in driving connection with the disassembly X-axis module and a disassembly rotating unit in driving connection with the disassembly Y-axis module, the disassembly X-axis module drives the disassembly Y-axis module to move along the X-axis, the disassembly Y-axis module drives the disassembly rotating unit to move along the Y-axis, the disassembly rotating unit is in driving connection with the base frame, and the disassembly rotating unit is used for driving the base frame to rotate, the disassembly rotating unit is provided with a protective cover, the protective cover is provided with an installation opening penetrating therethrough, and the output end of the jacking mechanism is arranged in the installation opening.

[0028] The deviation rectifying driving mechanism comprises a deviation rectifying X-axis module, a deviation rectifying Y-axis module in driving connection with the deviation rectifying X-axis module and a deviation rectifying rotating unit in driving connection with the deviation rectifying Y-axis module, the deviation rectifying X-axis module drives the deviation rectifying Y-axis module to move along the X-axis, the deviation rectifying Y-axis module drives the deviation rectifying rotating unit to move along the Y-axis, the deviation rectifying rotating unit is in driving connection with the deviation rectifying table, and the deviation rectifying rotating unit is used for driving the deviation rectifying table to rotate;

[0029] When it is needed to combine the graphite disc and the graphite ring, the mechanical arm places the graphite disc on the deviation rectifying table, the deviation rectifying driving mechanism drives the deviation rectifying table to move along the X and / or Y axis and drives the deviation rectifying table to rotate, so that the graphite disc determines its position and angle according to the second positioning reference, the merging and splitting module performs edge searching and deviation rectifying on the graphite ring, the mechanical arm places the graphite disc on the merging and splitting module, so that the center position and the inclined edge of the graphite ring and the graphite disc are consistent, and the merging and splitting module combines the graphite disc and the graphite ring.

[0030] The ring support is provided with a ring supporting opening, and when the ring support supports the graphite ring, the bottom outer edge of the graphite ring extends into the ring supporting opening.

[0031] The bottom end of the graphite ring is provided with a disc accommodating groove, the top end outer edge of the graphite disc extends into the disc accommodating groove when the graphite disc is combined with the graphite ring, the top end of the graphite ring is provided with a wafer accommodating groove, and the bottom end outer edge of the wafer extends into the wafer accommodating groove when the wafer is combined with the graphite ring.

[0032] In step S09, a cleaning mechanism is further provided.

[0033] When it is needed to clean the graphite disc and the graphite ring, the mechanical arm places the graphite ring and the graphite disc in the combined state into the cleaning mechanism, the cleaning mechanism removes the dust adhered to the graphite disc and the graphite ring, and the mechanical arm transfers the graphite disc and the graphite ring in the cleaning mechanism to the disc and ring placing box.

[0034] The present application has the following beneficial effects:

[0035] In actual application, the center position of the wafer and the direction of the inclined edge are determined by the edge finder, and then the wafer is not subjected to secondary adjustment by the correction platform, the merging and splitting module or the manipulator, the edge of the respective graphite disc and graphite ring is independently determined by the correction platform and the merging and splitting module, the wafer, the graphite ring and the graphite disc can independently complete the edge determination and correction, the manipulator only needs to perform fixed grabbing or placing of the wafer, the graphite ring or the graphite disc, and the graphite ring and the wafer or the graphite disc can be accurately merged or split, the wafer is accurately positioned, and the whole of the merged wafer, the graphite ring and the graphite disc is transferred to an epitaxial growth environment by the manipulator, so that the wafer processing quality is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 It is a schematic diagram of the three-dimensional structure of the SiC epitaxial substrate conveying method.

[0037] Figure 2 It is a schematic diagram of the structure of the merging of the graphite ring and the graphite disc.

[0038] Figure 3 It is an exploded view of the wafer, the graphite ring and the graphite disc.

[0039] Figure 4 It is a schematic diagram of the three-dimensional structure of the correction platform Figure 1 .

[0040] Figure 5 It is a schematic diagram of the position relationship of the tray, the graphite ring and the ring bracket before the wafer and the graphite ring are merged.

[0041] Figure 6 It is a schematic diagram of the three-dimensional structure of the merging and splitting module.

[0042] Figure 7 It is an exploded view of the merging and splitting driving mechanism.

[0043] Figure 8 It is a three-dimensional view of the separation of the graphite ring, the graphite disc and the merging and splitting module.

[0044] Figure 9 It is a schematic diagram of the three-dimensional structure of the correction platform Figure 2 .

[0045] Figure 10 It is a schematic diagram of the separation of the graphite ring and the ring bracket.

[0046] Figure 11 It is a schematic diagram of the separation of the graphite ring and the graphite disc.

[0047] Figure 12 It is a three-dimensional view of the separation of the wafer and the graphite ring.

[0048] Figure 13A schematic diagram of a cleaning mechanism and a mechanical hand in a three-dimensional structure.

[0049] 01, wafer; 02, graphite ring;

[0050] 021, disc accommodating groove; 022, sheet accommodating groove; 03, graphite disc;

[0051] 1, loading box; 2, mechanical hand; 3, edge finder;

[0052] 4, deviation rectifying platform;

[0053] 41, deviation rectifying table; 42, deviation rectifying driving mechanism;

[0054] 421, deviation rectifying X-axis module; 422, deviation rectifying Y-axis module; 423, deviation rectifying rotating unit; 43, deviation rectifying annular light source; 44, deviation rectifying collector;

[0055] 5, merging and splitting module;

[0056] 51, base frame; 511, movable port; 52, ring bracket; 521, ring supporting port;

[0057] 53, tray; 54, jacking mechanism; 55, merging and splitting driving mechanism;

[0058] 551, merging and splitting X-axis module; 552, merging and splitting Y-axis module; 553, merging and splitting rotating unit; 5531, shroud; 5532, mounting port;

[0059] 56, merging and splitting annular light source; 57, surface light source; 58, collecting device;

[0060] 6, disc and ring placing box; 7, cleaning mechanism. DETAILED DESCRIPTION

[0061] For the convenience of understanding of those skilled in the art, the present application will be further described below in conjunction with the embodiments and the accompanying drawings. The specific embodiments of the present application will be described below, and it should be noted that, in the specific description of these embodiments, the present specification cannot describe all the features of the actual embodiments in detail for the sake of brevity and conciseness.

[0062] Reference Figures 1 to 13 As shown in the drawings, the present application provides a SiC epitaxial substrate conveying method, comprising the following steps:

[0063] S01, provided with an edge finder 3, the edge finder 3 is provided with a first positioning reference, the edge finder 3 performs edge correction on the wafer 01 according to the first positioning reference to determine the position and angle of the wafer 01, specifically, the first positioning reference has been determined by debugging before the edge finder 3 works, the position and angle of the wafer 01 can be accurately determined through the first positioning reference, when the position and angle of the wafer 01 coincide with the position and angle of the first positioning reference, the edge finding of the wafer 01 is completed, the edge finding of the wafer 01 can be independently completed, and the edge finding efficiency of the wafer 01 is improved;

[0064] S02, provided with a correction platform 4, the correction platform 4 is provided with a second positioning reference, the correction platform 4 performs edge correction on the graphite disc 03 according to the second positioning reference to determine the position and angle of the graphite disc 03, specifically, the second positioning reference has been determined by debugging before the correction platform 4 works, when the position and angle of the graphite disc 03 coincide with the position and angle of the second positioning reference, the edge finding of the graphite disc 03 is completed;

[0065] S03, provided with a merging and splitting module 5, the merging and splitting module 5 is provided with a third positioning reference, the merging and splitting module 5 performs edge correction on the graphite ring 02 according to the third positioning reference to determine the position and angle of the graphite ring 02, specifically, the third positioning reference has been determined by debugging before the merging and splitting module 5 works, when the position and angle of the graphite ring 02 coincide with the position and angle of the third positioning reference, the edge finding of the graphite ring 02 is completed;

[0066] S04, the wafer 01 is grabbed by the manipulator 2 and placed on the merging and splitting module 5, so that the center position and the oblique edge direction of the wafer 01 and the graphite ring 02 are consistent, and the wafer 01 and the graphite ring 02 are merged by the merging and splitting module 5;

[0067] S05, the graphite disc 03 is grabbed by the manipulator 2 and placed on the merging and splitting module 5, so that the center position and the oblique edge direction of the graphite disc 03 and the graphite ring 02 are consistent, and the graphite disc 03 and the graphite ring 02 are merged by the merging and splitting module 5, and the merged wafer 01, graphite ring 02 and graphite disc 03 are put into the epitaxial growth environment by the manipulator 2;

[0068] S06, the wafer 01, graphite ring 02 and graphite disc 03 in the merging state are taken out from the epitaxial growth environment by the manipulator 2 and placed on the merging and splitting module 5;

[0069] S07, the graphite disc 03 is separated from the graphite ring 02 by the merging and splitting module 5, and the graphite disc 03 is placed on the correction platform 4 for edge finding by the manipulator 2, so that the graphite ring 02 is supported on the merging and splitting module 5;

[0070] S08, in step S07, provided with the loading box 1, using the combined split module 5 to separate the wafer 01 and the graphite ring 02, using the mechanical hand 2 to load the wafer 01 separated from the graphite ring 02 into the loading box 1;

[0071] S09, in step S07, provided with the disc ring placement box 2 for storing the combination of the graphite ring 02 and the graphite disc 03, using the mechanical hand 2 to load the graphite disc 03 at the deviation correction platform 4 into the combined split module 5, using the combined split module 5 to combine the graphite disc 03 and the graphite ring 02, using the mechanical hand 2 to load the combined graphite disc 03 and the graphite ring 02 into the disc ring placement box 2.

[0072] In actual application, after the center position and the hypotenuse orientation of the wafer 01 are determined by the edge finder 3, they will not be adjusted again by the deviation correction platform 4, the combined split module 5 or the mechanical hand 2, and the positioning and edge finding of the respective graphite disc 03 and the graphite ring 02 by the deviation correction platform 4 and the combined split module 5 also adopt independent edge finding, so that the wafer 01, the graphite ring 02 and the graphite disc 03 can all complete edge finding and deviation correction independently, thereby effectively eliminating the installation error of the wafer 01 and improving the positioning accuracy of the wafer 01; the mechanical hand 2 only needs to perform fixed actions of grabbing or placing the wafer 01, the graphite ring 02 or the graphite disc 03, which facilitates quick completion of the splitting and combining actions between the graphite ring 02 and the wafer 01 or the graphite disc 03, saves a lot of time for reference calibration between the edge finder 3, the deviation correction platform 4 and the combined split module 5, reduces the computational complexity of the equipment, enables the application to realize high-precision positioning through pre-set positioning reference, and finally transfers the combined wafer 01, the graphite ring 02 and the graphite disc 03 to the epitaxial growth environment through the mechanical hand 2, and successfully takes out the wafer 01 cultured in the epitaxial growth environment, thereby improving the positioning accuracy of the wafer 01 and ensuring the processing quality of the wafer 01.

[0073] Reference Figure 1 As shown in the figure, in the embodiment, the mechanical hand 2 is used to grab or place the wafer 01, the graphite ring 02 or the graphite disc 03; when the wafer 01, the graphite ring 02 and the graphite disc 03 are combined, the mechanical hand 2 grabs or places the graphite disc 03 to realize the overall transfer of the wafer 01, the graphite ring 02 and the graphite disc 03; when the wafer 01 and the graphite ring 02 are combined, the mechanical hand 2 grabs or places the graphite ring 02 to realize the overall transfer of the wafer 01 and the graphite ring 02; when the graphite ring 02 and the graphite disc 03 are combined, the mechanical hand 2 grabs or places the graphite disc 03 to realize the overall transfer of the graphite ring 02 and the graphite disc 03.

[0074] Reference Figure 1 , 4As shown, in the embodiment, in step S02, the graphite disc 03 is edge finding by the deviation rectifying platform 4, which comprises a deviation rectifying table 41, a deviation rectifying driving mechanism 42 drivingly connected with the deviation rectifying table 41, a deviation rectifying ring light source 43 and a deviation rectifying collector 44. The deviation rectifying driving mechanism 42 is used to drive the deviation rectifying table 41 to move along the X-axis and the Y-axis and to rotate the deviation rectifying table 41. The deviation rectifying ring light source 43 is located between the deviation rectifying table 41 and the deviation rectifying collector 44, and the deviation rectifying collector 44 corresponds to the deviation rectifying ring light source 43. In actual application, the robot 2 picks up the graphite disc 03 and places it on the deviation rectifying table 41, and the graphite disc 03 is supported by the deviation rectifying table 41. The deviation rectifying ring light source 43 provides light for the graphite disc 03, and the deviation rectifying collector 44 visually photographs to determine the position and angle of the graphite disc 03. The deviation rectifying driving mechanism 42 drives the deviation rectifying table 41 to move along the X-axis and / or the Y-axis according to the data obtained by the deviation rectifying collector 44, and rotates the deviation rectifying table 41, so that the graphite disc 03 determines its position and angle according to the second positioning reference, and the accurate edge finding of the graphite disc 03 is realized. Specifically, after the deviation rectifying platform 4 finds the edge of the graphite disc 03, the position and angle information of the graphite disc 03 is not transmitted to the robot 2 and the merging and splitting module 5, and the robot 2 can realize the picking and placing of the graphite disc 03 by using fixed picking or placing actions, and the separate edge finding of the graphite disc 03 is successfully realized.

[0075] Reference Figure 5 , 8 As shown, in the embodiment, in step S03, the merging and splitting module 5 comprises a chassis 51, a plurality of ring holders 52 connected to the top end of the chassis 51, a tray 53 and a jacking mechanism 54. The ring holders 52 are distributed in the circumferential direction of the chassis 51. The jacking mechanism 54 is drivingly connected with the tray 53. The chassis 51 has a movable opening 511 penetrating therethrough. The output end of the jacking mechanism 54 is arranged in the movable opening 511. The jacking mechanism 54 drives the tray 53 to move up and down, so that the tray 53 moves up and down inside the ring holder 52. The structure is compact and saves space.

[0076] In actual application, the jacking mechanism 54 is a pneumatic cylinder, an oil cylinder or an electric cylinder. When it is needed to separate the graphite disc 03 from the graphite ring 02, the jacking mechanism 54 drives the tray 53 to move upward to a desired height. The robot 2 places the combination of the graphite disc 03 and the graphite ring 02 into the merging and splitting module 5. The graphite ring 02 and the graphite disc 03 are respectively supported by the ring holder 52 and the tray 53. The jacking mechanism 54 drives the tray 53 to move downward, so that the graphite disc 03 moves downward synchronously with the tray 53 and is separated from the graphite ring 02.

[0077] Reference Figure 6As shown, in the embodiment, the merging and splitting module 5 further comprises a disassembly and assembly driving mechanism 55, a disassembly and assembly ring light source 56, a surface light source 57, and a collection device 58. The disassembly and assembly driving mechanism 55 is used to drive the chassis 51 to move along the X-axis and the Y-axis, and to rotate the chassis 51. The disassembly and assembly ring light source 56 is located between the chassis 51 and the surface light source 57. The front end of the collection device 58 penetrates through the surface light source 57 and corresponds to the disassembly and assembly ring light source 56.

[0078] Reference Figure 5 , 6 As shown, in actual application, the graphite ring 02 is supported by the ring bracket 52. The surface light source 57 and the disassembly and assembly ring light source 56 provide light compensation for the graphite ring 02 and the collection device 58. The collection device 58 visually takes a photo to determine the position and angle of the graphite ring 02. The disassembly and assembly driving mechanism 55 drives the chassis 51 to move along the X-axis and / or the Y-axis according to the data obtained by the collection device 58, and rotates the chassis 51, so as to adjust the position and angle of the ring bracket 52 and the graphite ring 02, so that the graphite ring 02 determines its own position and angle according to the third positioning reference.

[0079] In actual application, when it is needed to merge the wafer 01 and the graphite ring 02, the ring bracket 52 supports the graphite ring 02 which has been edge finding. The jacking mechanism 54 drives the tray 53 to move upward inside the graphite ring 02 to a required height. The robot 2 places the wafer 01 into the tray 53. The grabbing and placing actions of the robot 2 on the wafer 01 are fixed, which is beneficial to quickly and accurately complete the wafer 01 taking and placing, so that the wafer 01 and the graphite ring 02 are consistent in the center position and the oblique edge direction. The wafer 01 and the graphite ring 02 complete edge finding according to the respective first positioning reference and the third positioning reference, which is the end of edge finding. The edge finding of the wafer 01 and the graphite ring 02 is independently performed. The robot 2 can quickly perform subsequent wafer 01 and graphite ring 02 merging in the merging and splitting module 5 after grabbing. Then, the jacking mechanism 54 is lowered to drive the wafer 01 to be lowered synchronously, so that the wafer 01 is supported by the graphite ring 02, and the wafer 01 and the graphite ring 02 are merged.

[0080] Reference Figure 7As shown, in the embodiment, the disassembly and assembly driving mechanism 55 comprises a disassembly and assembly X-axis module 551, a disassembly and assembly Y-axis module 552 drivingly connected with the disassembly and assembly X-axis module 551, and a disassembly and assembly rotating unit 553 drivingly connected with the disassembly and assembly Y-axis module 552. The disassembly and assembly X-axis module 551 drives the disassembly and assembly Y-axis module 552 to move along the X-axis. The disassembly and assembly Y-axis module 552 drives the disassembly and assembly rotating unit 553 to move along the Y-axis. The disassembly and assembly rotating unit 553 is drivingly connected with the chassis 51. The disassembly and assembly rotating unit 553 is used to drive the chassis 51 to rotate. The disassembly and assembly rotating unit 553 is provided with a shroud 5531. The shroud 5531 is provided with an installation opening 5532 penetrating therethrough. The output end of the jacking mechanism 54 is arranged in the installation opening 5532. The front end of the jacking mechanism 54 is hidden in the shroud 5531. The structure is compact, and the space occupation is saved.

[0081] Reference Figure 9As shown, in the embodiment, the deviation rectifying driving mechanism 42 comprises a deviation rectifying X-axis module 421, a deviation rectifying Y-axis module 422 drivingly connected with the deviation rectifying X-axis module 421, and a deviation rectifying rotating unit 423 drivingly connected with the deviation rectifying Y-axis module 422. The deviation rectifying X-axis module 421 and the deviation rectifying Y-axis module 422 are linear motors, oil cylinders or electric cylinders. The deviation rectifying X-axis module 421 drives the deviation rectifying Y-axis module 422 to move along the X-axis. The deviation rectifying Y-axis module 422 drives the deviation rectifying rotating unit 423 to move along the Y-axis. The deviation rectifying rotating unit 423 is a servo motor or a driving motor. The deviation rectifying rotating unit 423 is drivingly connected with the deviation rectifying platform 41. The deviation rectifying rotating unit 423 is used to drive the deviation rectifying platform 41 to rotate, smoothly drive the deviation rectifying platform 41 to move along the X-axis and / or the Y-axis, and realize the rotation of the deviation rectifying platform 41. When it is needed to combine the graphite disc 03 with the graphite ring 02, the robot 2 places the graphite disc 03 on the deviation rectifying platform 41. The deviation rectifying driving mechanism 42 drives the deviation rectifying platform 41 to move along the X-axis and / or the Y-axis and rotate, so that the graphite disc 03 determines its position and angle according to the second positioning reference. The combination and separation module 5 performs edge searching and deviation rectifying on the graphite ring 02. Specifically, after the deviation rectifying platform 4 searches the edge of the graphite disc 03, the position and angle information of the graphite disc 03 is not transmitted to the robot 2, the combination and separation module 5 or the edge searcher 3. After the combination and separation module 5 searches the edge of the graphite ring 02, the edge searching and positioning of the graphite ring 02 is completed, and the position and angle information of the graphite ring 02 is not transmitted to the robot 2, the deviation rectifying platform 4 or the edge searcher 3. The robot 2 can realize the taking and placing of the graphite disc 03 by using fixed grabbing or placing actions, smoothly realize the separate edge searching of the graphite disc 03, and then the robot 2 places the graphite disc 03 on the combination and separation module 5, so that the center positions and inclined edge directions of the graphite ring 02 and the graphite disc 03 are consistent. The combination and separation module 5 combines the graphite disc 03 with the graphite ring 02. Since the process of combining the graphite disc 03 with the graphite ring 02 is performed after the combination of the wafer 01 and the graphite ring 02, the combination of the wafer 01, the graphite ring 02 and the graphite disc 03 is smoothly completed.

[0082] Reference Figure 10 As shown, in the embodiment, the ring bracket 52 is provided with a ring supporting opening 521. When the ring bracket 52 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring supporting opening 521, the graphite ring 02 is supported through the ring supporting opening 521, and the graphite ring 02 is conveniently positioned.

[0083] Reference Figure 11 As shown, in the embodiment, the bottom end of the graphite ring 02 is provided with an annular disc accommodating groove 021. When the graphite disc 03 is combined with the graphite ring 02, the top outer edge of the graphite disc 03 extends into the disc accommodating groove 021, and part of the graphite disc 03 is hidden in the graphite ring 02, so that the structure is compact, the space occupation is saved, the graphite disc 03 is conveniently and accurately positioned in the graphite ring 02, and referenceFigure 12 As shown, the top end of the graphite ring 02 is provided with an annular sheet accommodating groove 022, and the bottom end outer edge of the wafer 01 extends into the sheet accommodating groove 022 when the wafer 01 and the graphite ring 02 are combined, thereby hiding part of the wafer 01 in the graphite ring 02, which is compact in structure, saves space occupation, and is conducive to accurate positioning of the wafer 01 in the graphite ring 02.

[0084] Reference Figure 13 As shown, in the embodiment, a cleaning mechanism 7 is further provided in step S09, and the cleaning mechanism 7 is an ultrasonic cleaner; when it is necessary to clean the graphite disc 03 and the graphite ring 02, the mechanical arm 2 places the graphite ring 02 and the graphite disc 03 in a combined state into the cleaning mechanism 7, first removes dust adhered to the graphite disc 03 and the graphite ring 02 through the cleaning mechanism 7, and then the mechanical arm 2 transfers the graphite disc 03 and the graphite ring 02 in the cleaning mechanism 7 to the disc-ring placing box 6, which is conducive to recycling of the graphite ring 02 and the graphite disc 03.

[0085] The above is only a preferred embodiment of the present application, and does not limit the present application in any form. Although the present application is disclosed as above with a preferred embodiment, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content without departing from the technical solution of the present application, and any simple modification, equivalent change and modification of the above embodiment within the scope of the present application are all within the scope of the present application.

Claims

1. A method of transporting SiC epitaxial substrates, comprising: The following steps are involved: S01, an edge finder (3) is provided, the edge finder (3) is provided with a first positioning reference, and the edge finder (3) performs edge finding and deviation correction on the wafer (01) according to the first positioning reference to determine the position and angle of the wafer (01); S02, a deviation correction platform (4) is provided, the deviation correction platform (4) is provided with a second positioning reference, and the deviation correction platform (4) performs edge detection and deviation correction on the graphite disk (03) according to the second positioning reference to determine the position and angle of the graphite disk (03); S03, a merging and splitting module (5) is provided, the merging and splitting module (5) is provided with a third positioning reference, and the merging and splitting module (5) performs edge detection and deviation correction on the graphite ring (02) according to the third positioning reference to determine the position and angle of the graphite ring (02); S04, using a robot (2) to grab the wafer (01) and place it on the merging and splitting module (5), so that the center position and the hypotenuse direction of the wafer (01) and the graphite ring (02) are consistent, and using the merging and splitting module (5) to merge the wafer (01) and the graphite ring (02); S05, using a manipulator (2) to grab the graphite disk (03) and place it in a merging and splitting module (5), so that the center position and the hypotenuse direction of the graphite disk (03) and the graphite ring (02) are consistent, using the merging and splitting module (5) to merge the graphite disk (03) and the graphite ring (02), and using a manipulator (2) to place the merged wafer (01), the graphite ring (02) and the graphite disk (03) into an epitaxial growth environment; S06, using a robot (2) to take out the wafer (01), graphite ring (02) and graphite disk (03) in a merged state from the epitaxial growth environment and place them in a merging and splitting module (5); S07, using the merging and splitting module (5) to separate the graphite disk (03) from the graphite ring (02), and using the manipulator (2) to place the graphite disk (03) on the deviation correction platform (4) to find the edge, so that the graphite ring (02) is supported on the merging and splitting module (5); S08. In step S07, a loading box (1) is provided, a merging and splitting module (5) is used to separate the wafer (01) from the graphite ring (02), and a robot (2) is used to load the wafer (01) separated from the graphite ring (02) into the loading box (1); S09. In step S07, a disk-ring storage box (6) for storing a combination of a graphite ring (02) and a graphite disk (03) is provided, a manipulator (2) is used to load the graphite disk (03) at the deviation correction platform (4) into the merging and splitting module (5), the merging and splitting module (5) is used to merge the graphite disk (03) and the graphite ring (02), and the manipulator (2) is used to load the merged graphite disk (03) and the graphite ring (02) into the disk-ring storage box (6).

2. The SiC epitaxial substrate transfer method according to claim 1, wherein The robot (2) is used to grab or place a wafer (01), a graphite ring (02) or a graphite disk (03); When the wafer (01), the graphite ring (02) and the graphite disk (03) are combined, the robot (2) grabs or places the graphite disk (03) to achieve the overall transfer of the wafer (01), the graphite ring (02) and the graphite disk (03); When the wafer (01) and the graphite ring (02) are combined, the mechanical hand (2) grabs or places the graphite ring (02) to realize the overall transfer of the wafer (01) and the graphite ring (02); When the graphite ring (02) and the graphite disc (03) are combined, the mechanical hand (2) grabs or places the graphite disc (03) to realize the overall transfer of the graphite ring (02) and the graphite disc (03).

3. The SiC epitaxial substrate transfer method according to claim 2, wherein In step S02, the graphite disc (03) is edge finding by using the deviation rectification platform (4), the deviation rectification platform (4) includes a deviation rectification table (41), a deviation rectification driving mechanism (42) drivingly connected with the deviation rectification table (41), a deviation rectification ring light source (43) and a deviation rectification collector (44), the deviation rectification driving mechanism (42) is used to drive the deviation rectification table (41) to move along the X-axis and the Y-axis, and make the deviation rectification table (41) rotate, the deviation rectification ring light source (43) is located between the deviation rectification table (41) and the deviation rectification collector (44), and the deviation rectification collector (44) corresponds to the deviation rectification ring light source (43); When the graphite disc (03) is edge finding, the mechanical hand (2) grabs the graphite disc (03) and places it on the deviation rectification table (41), the graphite disc (03) is supported by the deviation rectification table (41), the deviation rectification ring light source (43) supplements light for the graphite disc (03), the deviation rectification collector (44) visually photographs to determine the position and angle of the graphite disc (03), and the deviation rectification driving mechanism (42) drives the deviation rectification table (41) to move along the X-axis and / or the Y-axis according to the data obtained by the deviation rectification collector (44), and makes the deviation rectification table (41) rotate, so that the graphite disc (03) determines its position and angle according to the second positioning reference.

4. The SiC epitaxial substrate transfer method according to claim 1, wherein In step S03, the combination and separation module (5) includes a chassis (51), a plurality of ring brackets (52) connected to the top end of the chassis (51), a tray (53) and a jacking mechanism (54), the ring brackets (52) are distributed circumferentially on the chassis (51), the jacking mechanism (54) is drivingly connected with the tray (53), the chassis (51) has a movable port (511) penetrating up and down, the output end of the jacking mechanism (54) is provided in the movable port (511), and the jacking mechanism (54) drives the tray (53) to move up and down, so that the tray (53) moves up and down on the inner side of the ring bracket (52). When it is needed to separate the graphite disc (03) from the graphite ring (02), the jacking mechanism (54) drives the tray (53) to move upward to a required height, the mechanical hand (2) puts the combination of the graphite disc (03) and the graphite ring (02) into the combination and separation module (5), the ring bracket (52) and the tray (53) support the graphite ring (02) and the graphite disc (03) respectively, and the jacking mechanism (54) drives the tray (53) to move downward, so that the graphite disc (03) moves downward synchronously with the tray (53) to separate from the graphite ring (02).

5. The SiC epitaxial substrate transfer method according to claim 4, wherein The merging and splitting module (5) further comprises a merging and splitting driving mechanism (55), a merging and splitting annular light source (56), a surface light source (57) and a collection device (58), the merging and splitting driving mechanism (55) is used for driving the chassis (51) to move along the X axis and the Y axis and to rotate the chassis (51), the merging and splitting annular light source (56) is located between the chassis (51) and the surface light source (57), and the front end of the collection device (58) penetrates through the surface light source (57) and corresponds to the merging and splitting annular light source (56); When the graphite ring (02) is edge finding, the ring bracket (52) supports the graphite ring (02), the surface light source (57) and the merging and splitting annular light source (56) provide light compensation for the graphite ring (02) and the collection device (58), the collection device (58) visually photographs to determine the position and angle of the graphite ring (02), the merging and splitting driving mechanism (55) drives the chassis (51) to move along the X axis and / or the Y axis and rotates the chassis (51) according to the data obtained by the collection device (58), and the position and angle of the ring bracket (52) and the graphite ring (02) are adjusted, so that the graphite ring (02) determines its own position and angle according to the third positioning reference; When the wafer (01) needs to be merged with the graphite ring (02), the ring bracket (52) supports the graphite ring (02) which has been edge found, the jacking mechanism (54) drives the tray (53) to move upward to the required height on the inside of the graphite ring (02), the mechanical hand (2) puts the wafer (01) into the tray (53), so that the wafer (01) and the graphite ring (02) are consistent in the position of the center and the direction of the inclined side, and the jacking mechanism (54) drives the wafer (01) to descend synchronously, so that the wafer (01) is supported by the graphite ring (02), and the wafer (01) is merged with the graphite ring (02).

6. The SiC epitaxial substrate transfer method according to claim 5, wherein The merging and splitting driving mechanism (55) comprises a merging and splitting X axis module (551), a merging and splitting Y axis module (552) which is drivingly connected with the merging and splitting X axis module (551), and a merging and splitting rotating unit (553) which is drivingly connected with the merging and splitting Y axis module (552), the merging and splitting X axis module (551) drives the merging and splitting Y axis module (552) to move along the X axis, the merging and splitting Y axis module (552) drives the merging and splitting rotating unit (553) to move along the Y axis, the merging and splitting rotating unit (553) is drivingly connected with the chassis (51), the merging and splitting rotating unit (553) is used for driving the chassis (51) to rotate, the merging and splitting rotating unit (553) is provided with a protective cover (5531), the protective cover (5531) is provided with an installation opening (5532) which penetrates through the protective cover (5531) from top to bottom, and the output end of the jacking mechanism (54) penetrates through the installation opening (5532).

7. The SiC epitaxial substrate transfer method according to claim 3, wherein The deviation correction driving mechanism (42) comprises a deviation correction X-axis module (421), a deviation correction Y-axis module (422) in driving connection with the deviation correction X-axis module (421), and a deviation correction rotating unit (423) in driving connection with the deviation correction Y-axis module (422). The deviation correction X-axis module (421) drives the deviation correction Y-axis module (422) to move along the X-axis. The deviation correction Y-axis module (422) drives the deviation correction rotating unit (423) to move along the Y-axis. The deviation correction rotating unit (423) is in driving connection with the deviation correction table (41), and is used to drive the deviation correction table (41) to rotate. When it is needed to combine the graphite disc (03) and the graphite ring (02), the mechanical arm (2) places the graphite disc (03) on the deviation correction table (41). The deviation correction driving mechanism (42) drives the deviation correction table (41) to move along the X and / or Y axis and to rotate, so that the graphite disc (03) determines its position and angle according to the second positioning reference. The edge correction and deviation correction module (5) performs edge correction and deviation correction on the graphite ring (02). The mechanical arm (2) places the graphite disc (03) on the edge correction and deviation correction module (5), so that the center positions and inclined edges of the graphite ring (02) and the graphite disc (03) are consistent. The edge correction and deviation correction module (5) combines the graphite disc (03) and the graphite ring (02).

8. The SiC epitaxial substrate transfer method according to claim 4, wherein The ring bracket (52) is provided with a ring supporting opening (521). When the ring bracket (52) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (521).

9. The SiC epitaxial substrate transport method according to claim 1, wherein, The bottom end of the graphite ring (02) is provided with a disc accommodating groove (021) in a ring shape. When the graphite disc (03) is combined with the graphite ring (02), the top end outer edge of the graphite disc (03) extends into the disc accommodating groove (021). The top end of the graphite ring (02) is provided with a wafer accommodating groove (022) in a ring shape. When the wafer (01) is combined with the graphite ring (02), the bottom end outer edge of the wafer (01) extends into the wafer accommodating groove (022).

10. The SiC epitaxial substrate transport method according to claim 1, wherein In step S09, a cleaning mechanism (7) is further provided. When it is needed to clean the graphite disc (03) and the graphite ring (02), the mechanical arm (2) places the graphite ring (02) and the graphite disc (03) in the combined state into the cleaning mechanism (7). The cleaning mechanism (7) removes dust adhered to the graphite disc (03) and the graphite ring (02). The mechanical arm (2) transfers the graphite disc (03) and the graphite ring (02) in the cleaning mechanism (7) to the disc and ring placing box (6).

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