Method and apparatus for susceptor assembly

By introducing a heating element and a ceramic cover design into the base assembly, combined with the air gap formed by the dielectric spacer, the problems of fragility and limited temperature adjustability of traditional ceramic bases are solved, and effective clamping and temperature management of high-stress wafers are achieved.

CN119542237APending Publication Date: 2025-02-28ASM IP HLDG BV
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Patent Information

Application Number
CN202411187152.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-08-31
Filing Date
2024-08-28
Publication Date
2025-02-28

AI Technical Summary

Technical Problem

Traditional ceramic base materials are fragile and have limited temperature adjustability, making it difficult to effectively clamp high stress wafers, resulting in undesirable film deposition.

Method used

A base assembly is designed including a base plate with a heating element and a ceramic cover disposed on the surface of the base plate, a cover is embedded with electrodes, and an air gap is formed by a plurality of dielectric spacers to separate from the base plate.

Benefits of technology

The heating element provides temperature control, combined with the air gap formed by the dielectric spacer, effective clamping and temperature management of high-stress wafers are achieved, avoiding film deposition.

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Abstract

Various embodiments of the present technology may provide a susceptor assembly. The base assembly may include a base plate and a cover disposed on a surface of the base plate. The cap may have an electrode embedded therein. The base plate may have a heating element embedded therein. The cover may be separated from the base plate by an air gap formed by the plurality of dielectric spacers. The plurality of dielectric spacers may be dimensioned for minimal contact on the lid.
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Description

Technical Field

[0001] The present invention generally relates to methods and apparatus for a susceptor assembly. More particularly, the present invention relates to a susceptor assembly including a susceptor having a heating element and a cover disposed on the susceptor and having electrodes. Background Art

[0002] It may be necessary to use electrostatic forces integrated into the susceptor plate to flatten (i.e., clamp) the highly stressed wafer. Without such wafer clamping, undesirable film deposition may occur. Conventional susceptors are formed using ceramic materials, such as aluminum nitride. However, this material is brittle and offers limited temperature tunability. Aluminum nitride also has very low fracture toughness, which makes it susceptible to cracking and breaking due to thermal stresses. Summary of the invention

[0003] Various embodiments of the present technology may provide a susceptor assembly. The susceptor assembly may include a susceptor plate and a cover disposed on a surface of the susceptor plate. The cover may have an electrode embedded therein. The susceptor plate may have a heating element embedded therein. The cover may be separated from the susceptor plate by an air gap formed by a plurality of dielectric spacers. The dimensions of the plurality of dielectric spacers may be designed for minimal contact on the cover.

[0004] According to one aspect, a device includes: a base plate including a first surface and a second surface; a cover removably disposed on the first surface of the base plate; an air gap between the first surface of the base plate and the cover; a plurality of electrodes embedded in the cover; a first electrical interconnect embedded in the base plate and extending through the first and second surfaces; and a second electrical interconnect configured to electrically connect the plurality of electrodes to the first electrical interconnect.

[0005] In one embodiment, the base plate is formed of a metallic material.

[0006] In one embodiment, the cover is formed from a ceramic material.

[0007] In one embodiment, the device further comprises a heating element embedded in the base plate.

[0008] In one embodiment, the apparatus further includes a shaft coupled to the second surface of the base plate, wherein the shaft includes a hollow interior.

[0009] In one embodiment, the first electrical interconnect extends into the hollow interior of the shaft.

[0010] In one embodiment, the base plate is formed from a ceramic material.

[0011] In one embodiment, the apparatus further includes a plurality of dielectric spacers disposed between the first surface of the base plate and the cover, wherein the dielectric spacers form air gaps between the first surface of the base plate and the cover.

[0012] In one embodiment, the susceptor plate further comprises a plurality of through holes extending from the first surface to the second surface, wherein each through hole is fluidly connected to a source of an inert gas.

[0013] In yet another aspect, a device includes: a base plate comprising a first surface and a second surface; a cover removably disposed on the first surface of the base plate; a plurality of dielectric spacers arranged between the first surface of the base plate and the cover, wherein the dielectric spacers form an air gap between the first surface of the base plate and the cover; a plurality of electrodes embedded in the cover; an electrical port embedded in the base plate; and an electrical plug connected to the plurality of electrodes, wherein the electrical plug is configured to be electrically connected to the first electrical port.

[0014] In one embodiment, the base plate is formed of a metallic material.

[0015] In one embodiment, the cover is formed from a ceramic material.

[0016] In one embodiment, the device further comprises a heating element embedded in the base plate.

[0017] In one embodiment, the apparatus further includes a shaft coupled to the second surface of the base plate, wherein the shaft includes a hollow interior.

[0018] In one embodiment, at least a portion of the second electrical port is encapsulated with an insulating material.

[0019] On the other hand, a system includes: a reaction chamber including an internal space; a susceptor assembly, which is disposed in the internal space and includes: a susceptor plate formed of a metal material and including a first surface and a second surface; a cover disposed on the susceptor plate and formed of a ceramic material; a plurality of spacers arranged between the first surface of the susceptor plate and the cover, wherein the spacers form an air gap between the first surface of the susceptor plate and the cover; a plurality of electrodes embedded in the cover; and an electrical interconnect extending through the first and second surfaces of the susceptor plate, wherein the electrical interconnect is configured to be electrically connected to the plurality of electrodes.

[0020] In one embodiment, the base plate further includes a through-hole extending from the first surface to the second surface, and wherein the electrical interconnect is disposed within the through-hole.

[0021] In one embodiment, the width of each spacer is no greater than 1 mm.

[0022] In one embodiment, the system further includes a heating element embedded in the susceptor plate.

[0023] In one embodiment, the susceptor plate further comprises a plurality of through holes extending from the first surface to the second surface, wherein each through hole is fluidly connected to a source of an inert gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] A more complete understanding of the present technology may be obtained by referring to the detailed description when considered in conjunction with the following illustrative drawings.In the following drawings, like reference numerals refer to like elements and steps throughout the drawings.

[0025] FIG. 1 is a block diagram of a system according to various embodiments of the present technology;

[0026] FIG. 2 representatively illustrates a cross-sectional view of a base assembly according to various embodiments of the present technology;

[0027] FIG3 representatively illustrates a top view of a base plate according to various embodiments of the present technology;

[0028] 4A representatively illustrates a cross-sectional view of a dielectric spacer according to various embodiments of the present technology;

[0029] 4B representatively illustrates an alternative cross-sectional view of a dielectric spacer according to various embodiments of the present technology;

[0030] FIG5 representatively illustrates a portion of a base assembly according to various embodiments of the present technology;

[0031] FIG6 representatively illustrates electrical interconnections in a base assembly according to various embodiments of the present technology;

[0032] FIG. 7 representatively illustrates an alternative electrical interconnection in a base assembly according to various embodiments of the present technology; and

[0033] FIG. 8 representatively illustrates an alternative electrical interconnection in a base assembly in accordance with various embodiments of the present technology. DETAILED DESCRIPTION

[0034] The present technology may be described in terms of functional block components and various processing steps. Such functional blocks may be implemented by any number of components configured to perform a specified function and achieve a variety of results. For example, the present technology may use various reaction chambers, lift pins, processors / control units, heating elements, electrodes, and gas delivery systems.

[0035] 1, exemplary system 100 may include reaction chamber 105, source chemical container 110, inert gas source 125, and control unit 130. Reaction chamber 105 may be used to deposit a film on a substrate such as wafer 120. Reaction chamber 105 may include a plurality of sidewalls and a bottom surface forming an interior space.

[0036] The source chemical container 110 can be configured to contain solid or liquid chemicals. In various embodiments, the container 110 can be configured to heat or sublimate the chemical into a gaseous form. The gas can flow into the reaction chamber 105. For example, the system 100 can include a gas line assembly (not shown) configured to flow the gas into the reaction chamber 105 at a desired flow rate.

[0037] In various embodiments, the system 100 may further include a showerhead assembly (not shown) for delivering and distributing gas into the reaction chamber 105. For example, the showerhead may include a plurality of through holes configured to allow gas to flow into the interior space of the reaction chamber 105. The showerhead assembly may be disposed above the reaction chamber 105 and close the interior space of the reaction chamber 105.

[0038] In various embodiments, the inert gas source 125 can be configured to contain an inert gas, such as argon or nitrogen. The inert gas source 125 can include a vessel, a capsule, or other suitable container. The inert gas source 125 can be pressurized or unpressurized.

[0039] In various embodiments, the inert gas source 125 can be fluidly connected to the base assembly 115. For example, the inert gas source 125 can be coupled to the base assembly 115 via a pipe, a gas line, or other suitable hollow connector.

[0040] In various embodiments, the control unit 130 can be configured to operate various aspects of the base assembly 115, control the operation of the valves, and provide power to various aspects of the base assembly 115. For example, the control unit 130 can generate various control signals based on the desired operation of the base assembly 115. The control unit 130 can include a processor, a memory, and / or any other system or device suitable for generating control signals and providing power.

[0041] 2-5 , the susceptor assembly 115 may be configured to support the wafer 120 during processing / film deposition and may be disposed within the interior space of the reaction chamber 105. In an exemplary embodiment, the susceptor assembly 115 may include a susceptor plate 200, a base 215, and a lid 205.

[0042] In various embodiments, the base assembly 115 may be configured to provide an electrostatic clamping function.

[0043] In some embodiments, the base assembly 115 can be configured to move up and down. Alternatively, the base assembly 115 can be located in a fixed position.

[0044] The base plate 200 may include a first surface 250 and an opposing second surface 255. For example, the first and second surfaces 250, 255 may be parallel to each other. In one embodiment, the base plate 200 may be formed of a ceramic material, such as aluminum nitride, aluminum oxide, silicon carbide (SiC), silicon nitride (SiN). In other embodiments, the base plate 200 may be formed of a metal material, such as stainless steel, Hastelloy C22, or any other suitable high temperature metal or metal alloy.

[0045] In various embodiments, the base plate 200 may include a plurality of heating elements 225 embedded within the base plate 200. The heating elements 225 may be used to control the temperature of the base plate 200. The heating elements 225 may include any device suitable for generating heat. The heating elements 225 may be arranged in any desired pattern. In some embodiments, the heating elements 225 may be arranged to provide a plurality of heating zones. For example, the heating elements 225 may be arranged in a pattern that provides a first temperature near the center of the base plate 200 and a second temperature near the outer edge of the base plate 200, wherein the first temperature is different from the second temperature. For example, a first subset of heating elements (e.g., 225 (b) and 225 (c)) may be electrically connected together, and a second subset of heating elements (e.g., 225 (a) and 225 (d)) may be electrically connected together. The first and second subsets may be electrically isolated from each other, and thus, the heating elements of the first subset may operate independently of the heating elements of the second subset. For example, heating elements 225(b) and 225(c) may be operated together at a first temperature, and heating elements 225(a) and 225(d) may be operated together at a second temperature.

[0046] In an exemplary embodiment, the base plate 200 may also include a plurality of through holes 235 extending from the first surface 250 to the second surface 250. The through holes 235 may provide a flow path for a gas, such as an inert gas from the inert gas source 125. In an exemplary embodiment, the through holes 235 are not obstructed by other elements or features. In other words, the through holes 235 are open to allow the gas to flow easily.

[0047] In various embodiments, the dielectric spacer 220 may be disposed between the base plate 200 and the cover 205. In particular, the dielectric spacer 220 may be disposed directly on the first surface 250 of the base plate 200. The dielectric spacer 220 may be formed of a material having a high contact resistance, such as a material from the silicate family, zirconium oxide, beryllium carbide (BeC), zirconium carbide (ZrC), silicon carbide, silicon nitride, etc., to prevent current from leaking from the cover 205 to the base plate 200.

[0048] In various embodiments, the dielectric spacer 220 may have any suitable shape, such as a cubic shape or a hemispherical shape. In various embodiments, the dielectric spacer 220 may have a height H of 1 mm or less and a width W (or diameter) of 1 mm or less. In various embodiments, the total area covered by the dielectric spacer 220 is less than 1% of the total surface area of ​​the first surface 250 of the base plate 200.

[0049] In various embodiments, the dielectric spacers 220 may be arranged in any suitable pattern to allow gas to flow from the center of the susceptor plate 200 to the outer edge of the susceptor plate 200. For example, the dielectric spacers 220 may be arranged as shown in FIG. 3 such that the flow paths 300 extend radially outward to the edge of the susceptor plate 200.

[0050] In various embodiments, the cover 205 can be disposed adjacent to the first surface 250 of the base plate 200. The cover 205 can include a top surface 510 and a bottom surface 505. In various embodiments, the cover 205 can be removable from the base plate 200. For example, the cover 205 can rest on the dielectric spacer 220, or it can be removably coupled via a separable electrical interconnect.

[0051] In various embodiments, the cover 205 may have a first thickness T1 in a central region and a second thickness T2 in an outer region surrounding the central region. Therefore, the bottom surface 505 of the cover 205 may have a recessed region. In other words, the bottom surface 505 of the cover 205 may not be planar. In the present case, the bottom surface 505 may include a planar surface connected by an inclined surface.

[0052] In an alternative embodiment, the bottom surface 505 of the cover 205 is planar. In this case, the cover 205 will have a uniform thickness across its entire area.

[0053] In various embodiments, the bottom surface 505 of the cover 205 may be separated from the first surface 250 of the base plate 200 by a first air gap G1 and a second air gap G2. The first air gap G1 is a gap between the bottom surface of the cover 205 (where the cover 205 has a first thickness T1) and the first surface 250 of the base plate 200. The first air gap G1 may be formed by the dielectric spacer 220. Therefore, the height of the air gap may be equal to the height of the dielectric spacer.

[0054] The second air gap G2 is a gap between the bottom surface of the cover 205 (where the cover 205 has the second thickness T2) and the first surface 250 of the base plate 200. Therefore, the height of the second air gap G2 may vary based on the value of the second thickness T2.

[0055] In an exemplary embodiment, the cover 205 may include a plurality of electrodes 230. The plurality of electrodes 230 may be configured to provide an electrostatic clamping function. Thus, the plurality of electrodes may be connected to a power source or voltage source.

[0056] In various embodiments, the cover 205 may be formed of a ceramic material having a high resistivity, such as aluminum nitride, aluminum oxide, silicon carbide (SiC), silicon nitride (SiN).

[0057] In various embodiments, the cover 205 may include a recess (not shown) on the top surface 500 of the cover 205. The recess may be sized to accommodate a wafer within the recess.

[0058] The second thickness T2 may be greater than the first thickness T1. Therefore, the air gap G1 may be greater than the air gap G2. The second thickness T2 of the cover 205 may be in the range of 3 mm to 7 mm. The first thickness T1 may be in the range of 3 mm to 5 mm.

[0059] In various embodiments, the base 215 can be coupled to the second surface 255 of the base plate 200. The base 215 can include an outer sidewall 270 and an inner sidewall 275. The inner sidewall 275 can be separated from the outer sidewall 270 by a gap having a width 245, wherein the inner sidewall 275 and the outer sidewall 270 form an outer hollow region. The inner sidewall 275 can also form a central hollow region 260. The central hollow region 260 can be used to accommodate or otherwise secure electrical interconnects, such as electrical interconnects connected to the heating element 225 and / or the electrode 230.

[0060] In various embodiments, the base 215 may further include a plurality of gas lines 240 to connect to the through holes 235 in the base plate 200. The gas lines 240 may be configured to provide a flow path for a gas, such as an inert gas from the inert gas source 125. The gas lines 240 may be formed of a metallic material or any other suitable material. In an exemplary embodiment, the gas lines 240 may be disposed within the outer hollow region, between the inner sidewall 275 and the outer sidewall 270. Alternatively, the gas lines 240 may be disposed within the central hollow region 260.

[0061] Embodiments of the present technology may utilize any suitable electrical connection to electrically connect the electrode 230 to the control unit 130. In one embodiment, referring to FIG6 , a wire 600 may be used to connect to a desired electrode 230. In this case, the wire 600 may extend through the bottom surface 505 of the cover 205, through the air gap G1, through the base plate 200, and through the substrate 215. In this case, the wire 600 may be one continuous wire.

[0062] In an alternative embodiment, referring to FIG. 7 , the electrical connection may include a contact pad to form an electrical connection between the electrode 230 in the cover 205 and the base plate 200. In an exemplary embodiment, the cover 205 may include a wire 700 connected to the electrode 230 and extending to the bottom surface 505 and a first contact pad 710 disposed at the bottom surface 505 and electrically connected to the wire 700. The contact pad 710 may be encapsulated by an electrically insulating material 720. In this case, the base plate 200 may include a wire 705 extending through the base plate 200 and connected to a second contact pad 715 at the first surface 250 of the base plate 200. The first and second contact pads 710, 715 are aligned to form an electrical connection. The wire 705 in the base plate 200 may extend through the base 215 and be connected to the control unit 130.

[0063] In an alternative embodiment, referring to FIG8 , the electrical connection may include a plug 805 and a plug port 815 to form an electrical connection between the electrode 230 and the base plate 200. In an exemplary embodiment, the cover 205 may include a wire 800 that electrically connects the electrode 230 to the plug 805. The plug 805 may be encapsulated by an electrically insulating material 805. The base plate 200 may include a plug port 815. The plug port 815 may be embedded in the base plate 200. In an exemplary embodiment, the plug 805 is arranged to be vertically aligned with the plug port 815 and electrically connected or otherwise mated. The plug port 815 may be electrically connected to the control unit 130 with a wire 820 to power the electrode 230.

[0064] In various embodiments, the system 100 may further include a plurality of lift pins (not shown). Each lift pin may be disposed in a corresponding through hole (not shown) extending through the base plate 200 and a corresponding through hole (not shown) extending through the cover 205. The through hole in the cover 205 is aligned with the through hole in the base plate 200. Thus, one lift pin extends all the way through the base plate 200 and the cover 205. The lift pins may be formed of a ceramic material, a metal material, or any suitable material.

[0065] 1-3, in operation, the susceptor assembly 115 can provide electrostatic clamping and / or temperature control. For example, the control unit 130 can transmit control signals and / or power to the electrode 230 to form an electric field. The control unit 130 can also transmit control signals and / or power to the heating element 225 to heat the susceptor plate 200 to a desired temperature.

[0066] The control unit 130 can also control the gas flow in the system 100. For example, the control unit 130 can control a valve (not shown) disposed between the inert gas source 125 and the base assembly 115. The valve can control the flow of the inert gas from the inert gas source 125 to the substrate 215. For example, the valve can be connected to a gas line 240 disposed within the substrate 215. When the valve is open, the inert gas from the inert gas source 125 flows through the gas line 240 and the through hole 235. The gas leaves the through hole 235 and flows through the gap between the base plate 200 and the cover 205. As shown in FIG. 3, the gas can flow radially outward to the edge of the base plate 200. This radial flow pattern can prevent chemical substances from being deposited on the bottom surface 505 of the cover 205. The gas flow can also provide improved temperature control, heat transfer and / or thermal uniformity by generating convective heating of the cover 205. The gas flow can also prevent oxidation of the electrical interface.

[0067] In the foregoing description, the technology has been described with reference to specific exemplary embodiments. The specific embodiments shown and described are illustrations of the technology and its best mode and are not intended to limit the scope of the technology in any way. In fact, for the sake of brevity, the conventional manufacturing, connection, preparation and other functional aspects of the method and system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. In actual systems, there may be many alternative or additional functional relationships or physical connections.

[0068] The technology has been described with reference to specific exemplary embodiments. However, various modifications and changes may be made without departing from the scope of the technology. The description and drawings are to be regarded as illustrative rather than restrictive, and all such modifications are intended to be included within the scope of the technology. Therefore, the scope of the technology should be determined by the general embodiments described and their legal equivalents, rather than solely by the specific examples described above. For example, the steps described in any method or process embodiment may be performed in any order unless otherwise expressly specified, and are not limited to the explicit order presented in the specific examples. In addition, the components and / or elements described in any device embodiment may be assembled or otherwise operably configured in various arrangements to produce substantially the same results as the technology, and are therefore not limited to the specific configurations described in the specific examples.

[0069] Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, any benefit, advantage, solution to a problem, or any element that may cause any particular benefit, advantage, or solution to occur or become more significant should not be construed as a critical, required, or essential feature or component.

[0070] The terms "comprises," "comprising," or any variations thereof, are intended to refer to non-exclusive inclusion, such that a process, method, article, composition, or apparatus that includes a list of elements includes not only those elements listed, but may also include other elements not expressly listed or inherent to such process, method, article, composition, or apparatus. Other combinations and / or modifications of the above-described structures, arrangements, applications, proportions, elements, materials, or components used in the practice of the present technology, except those not specifically recited, may be changed or otherwise specially adapted to a particular environment, manufacturing specifications, design parameters, or other operating requirements without departing from the general principles thereof.

[0071] The present technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the present technology. These and other changes or modifications are intended to be included within the scope of the present technology, as expressed in the following claims.

Claims

1. A device comprising: a base plate comprising a first surface and a second surface; a cover removably disposed on the first surface of the base plate; an air gap between the first surface of the base plate and the cover; a plurality of electrodes embedded in the cover; a first electrical interconnect embedded in the base plate and extending through the first and second surfaces; as well as A second electrical interconnect is configured to electrically connect the plurality of electrodes to the first electrical interconnect.

2. The device according to claim 1, wherein: The base plate is formed of a metal material.

3. The device according to claim 1, wherein: The cover is formed of a ceramic material.

4. The apparatus of claim 1 further comprising a heating element embedded within the base plate.

5. The apparatus of claim 1, further comprising a shaft coupled to the second surface of the base plate, wherein: The shaft includes a hollow interior.

6. The device according to claim 5, wherein: The first electrical interconnect extends into the hollow interior of the shaft.

7. The device according to claim 1, wherein: The base plate is formed of a ceramic material.

8. The apparatus of claim 1, further comprising a plurality of dielectric spacers disposed between the first surface of the base plate and the cover, wherein the dielectric spacers form an air gap between the first surface of the base plate and the cover.

9. The device according to claim 1, wherein: The susceptor plate also includes a plurality of through holes extending from the first surface to the second surface, wherein each through hole is fluidly connected to a source of an inert gas.

10. An apparatus comprising: a base plate comprising a first surface and a second surface; a cover removably disposed on the first surface of the base plate; a plurality of dielectric spacers disposed between the first surface of the base plate and the cover, wherein the dielectric spacers form an air gap between the first surface of the base plate and the cover; a plurality of electrodes embedded in the cover; An electrical port embedded in the base plate; as well as An electrical plug connected to the plurality of electrodes, wherein the electrical plug is configured to be electrically connected to the electrical port.

11. The device according to claim 10, wherein: The base plate is formed of a metal material.

12. The device according to claim 10, wherein: The cover is formed of a ceramic material.

13. The apparatus of claim 10, further comprising a heating element embedded within the base plate.

14. The apparatus of claim 10, further comprising a shaft coupled to the second surface of the base plate, wherein: The shaft includes a hollow interior.

15. The device according to claim 10, wherein: At least a portion of the electrical plug is encapsulated with an insulating material.

16. A system comprising: A reaction chamber including an interior space; A base assembly is disposed within the interior space and includes: a base plate formed of a metal material and comprising a first surface and a second surface; a cover disposed on the base plate and formed of a ceramic material; a plurality of spacers disposed between the first surface of the base plate and the cover, wherein the spacers form an air gap between the first surface of the base plate and the cover; a plurality of electrodes embedded in the cover; and An electrical interconnect extends through the first and second surfaces of the base plate, wherein the electrical interconnect is configured to electrically connect to the plurality of electrodes.

17. The system of claim 16, wherein: The base plate further includes a through-hole extending from the first surface to the second surface, and wherein the electrical interconnect is disposed within the through-hole.

18. The system of claim 16, wherein: The width of each spacer is not greater than 1 mm.

19. The system of claim 16, further comprising a heating element embedded within the susceptor plate.

20. The system of claim 16, wherein: The susceptor plate further includes a plurality of through holes extending from the first surface to the second surface, wherein each through hole is fluidly connected to a source of an inert gas.