Perovskite crystalline silicon laminated cell, preparation method thereof and photovoltaic module

Abstract

The invention discloses a perovskite crystal silicon laminated cell, a preparation method thereof and a photovoltaic module. The perovskite crystal silicon laminated cell comprises a crystal silicon bottom cell, a tunneling layer, a perovskite top cell and a positive metal electrode, the tunneling layer is arranged on the front surface of the crystalline silicon bottom battery; the perovskite top cell is arranged on the tunneling layer, the perovskite top cell comprises a first transparent conductive layer, an electron transport layer, a perovskite layer and a hole transport layer which are arranged in sequence, and each of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer is provided with a through hole. And the positive metal electrode is arranged in the groove through insulating glue and is electrically connected with the first transparent conductive layer. According to the invention, the influence of the high-temperature sintering process on the perovskite cell is avoided, the thermal damage risk of the perovskite layer is reduced, the use of ultralow-temperature metal slurry with high cost is avoided, and the mature technical preparation process is adopted, so that the manufacturing cost of the cell is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of laminated cells, and in particular to a perovskite crystalline silicon laminated cell and a preparation method thereof and a photovoltaic module. Background Art

[0002] Tandem cells can break through the SQ limitation and achieve high conversion efficiency that is difficult to achieve with a single cell. Among them, perovskite crystalline silicon tandem cells have the advantages of high conversion efficiency, relatively mature technology, and relatively low cost, and are currently one of the hottest directions in tandem cells. However, the high temperature resistance of perovskite makes it difficult to prepare commercial-sized perovskite crystalline silicon tandem cell electrodes using mainstream metal slurry printing and sintering methods. Ultra-low temperature metal slurries are expensive and have relatively poor conductivity, and the sintering temperature also has a certain impact on perovskite cells. Summary of the invention

[0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent.

[0004] To this end, an embodiment of the present invention provides a perovskite crystalline silicon tandem cell and a preparation method thereof and a photovoltaic module.

[0005] The perovskite crystalline silicon stacked cell of the embodiment of the present invention comprises a crystalline silicon bottom cell, a tunneling layer, a perovskite top cell and a positive metal electrode; the tunneling layer is arranged on the front side of the crystalline silicon bottom cell; the perovskite top cell is arranged on the tunneling layer, and the perovskite top cell comprises a first transparent conductive layer, an electron transport layer, a perovskite layer and a hole transport layer arranged in sequence from top to bottom, and each of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer is provided with a through hole, so that a groove is defined between the hole wall of each through hole of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer and the crystalline silicon bottom cell; the positive metal electrode is arranged in the groove through an insulating glue and is electrically connected to the first transparent conductive layer.

[0006] In some embodiments, the insulating glue is a traceless insulating glue.

[0007] In some embodiments, the positive metal electrode is a copper wire or a silver-plated copper wire.

[0008] In some embodiments, the crystalline silicon bottom cell includes a second transparent conductive layer and a third transparent conductive layer located on both sides, the second transparent conductive layer is connected to the tunneling layer, the bottom wall of the groove is located on the second transparent conductive layer, and a back metal electrode is provided on the third transparent conductive layer.

[0009] In some embodiments, the second transparent conductive layer and the third transparent layer include an N-doped layer, a first passivation layer, a crystalline silicon substrate, a second passivation layer and a P-doped layer sequentially arranged from top to bottom.

[0010] The method for preparing the perovskite crystalline silicon tandem battery according to the embodiment of the present invention comprises:

[0011] S1, provide crystalline silicon bottom cells;

[0012] S2, preparing a tunneling layer on the front side of the crystalline silicon bottom cell;

[0013] S3, sequentially preparing a hole transport layer, a perovskite layer and an electron transport layer on the tunneling layer;

[0014] S4, opening a through hole in each of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer, so that a groove is defined between the hole wall of each of the through holes in the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer and the crystalline silicon bottom cell;

[0015] S5, placing insulating glue in the groove;

[0016] S6, placing a positive metal electrode on the insulating glue and curing the insulating glue to fix the positive metal electrode;

[0017] S7, preparing a first transparent conductive layer on the electron transport layer and electrically connecting the first transparent conductive layer to the positive metal electrode.

[0018] In some embodiments, in S4, laser drilling is used.

[0019] In some embodiments, insulating glue is printed or sprayed in the groove.

[0020] In some embodiments, in S6, the insulating adhesive is cured by air drying or UV irradiation.

[0021] The photovoltaic module of the embodiment of the present invention includes the perovskite crystalline silicon stacked cell described in any of the above embodiments.

[0022] The perovskite crystalline silicon tandem battery of the embodiment of the present invention realizes the complementarity of the crystalline silicon bottom battery and the perovskite top battery through the tandem design, so that the conversion efficiency of the overall battery is significantly improved. Due to the use of the tunneling layer and through-hole design, the present invention not only avoids the influence of the high-temperature sintering process on the perovskite battery, reduces the risk of thermal damage to the perovskite layer, but also avoids the use of ultra-low temperature metal slurry with high cost, and adopts mature technical preparation process, which helps to reduce the manufacturing cost of the battery. Through the specific structural design, the present invention simplifies the manufacturing process of the battery, which is conducive to large-scale production. The present invention is not only applicable to perovskite crystalline silicon tandem batteries, but can also be extended to other types of tandem batteries, and has a broad application prospect. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic structural diagram of a crystalline silicon bottom cell according to an embodiment of the present invention.

[0024] Figure 2 It is a schematic diagram of the arrangement of the crystalline silicon bottom cell and the perovskite top cell according to an embodiment of the present invention.

[0025] Figure 3 It is a partial structural schematic diagram of a perovskite crystalline silicon tandem battery according to an embodiment of the present invention.

[0026] Figure 4 It is a partial structural schematic diagram of a perovskite crystalline silicon tandem battery according to an embodiment of the present invention.

[0027] Figure 5 It is a schematic diagram of the installation of the positive metal electrode of the perovskite crystalline silicon tandem battery according to an embodiment of the present invention.

[0028] Figure 6 It is a schematic diagram of the structure of a perovskite crystalline silicon tandem battery according to an embodiment of the present invention.

[0029] Figure 7 It is a flow chart of the method for preparing the perovskite crystalline silicon tandem battery according to an embodiment of the present invention.

[0030] Reference numerals:

[0031] 100. Perovskite crystalline silicon stacked cell; 1. Crystalline silicon bottom cell; 101. Second transparent conductive layer; 102. Third transparent layer; 103. N-doped layer; 104. First passivation layer; 105. Crystalline silicon substrate; 106. Second passivation layer; 107. P-doped layer; 2. Tunneling layer; 3. Perovskite top cell; 301. First transparent conductive layer; 302. Electron transport layer; 303. Perovskite layer; 304. Hole transport layer; 305. Groove; 4. Positive metal electrode; 5. Insulating glue; 6. Back metal electrode. DETAILED DESCRIPTION

[0032] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.

[0033] like Figures 1 to 6 As shown, the perovskite crystalline silicon stacked cell 100 of the embodiment of the present invention includes a crystalline silicon bottom cell 1, a tunneling layer 2, a perovskite top cell 3 and a positive metal electrode 4. The tunneling layer 2 is arranged on the front of the crystalline silicon bottom cell 1, and the perovskite top cell 3 is arranged on the tunneling layer 2. The perovskite top cell 3 includes a first transparent conductive layer 301, an electron transport layer 302, a perovskite layer 303 and a hole transport layer 304 arranged in sequence from top to bottom, and each of the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2 is provided with a through hole, so that the hole wall of each through hole in the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2 defines a groove 305 between the crystalline silicon bottom cell 1, and the positive metal electrode 4 is arranged in the groove 305 through the insulating glue 5 and is electrically connected to the first transparent conductive layer 301.

[0034] The perovskite crystalline silicon stacked cell 100 of the embodiment of the present invention forms a new type of stacked cell structure by combining the crystalline silicon bottom cell 1, the tunneling layer 2, the perovskite top cell 3 and the positive metal electrode 4. Each layer in the tunneling layer 2 and the top cell is provided with through holes, and grooves 305 are formed between the hole walls of these through holes and the crystalline silicon bottom cell 1. The positive metal electrode 4 is arranged in the groove 305 through the insulating glue 5 and is electrically connected to the first transparent conductive layer 301, so as to effectively collect and output the current.

[0035] The perovskite crystalline silicon tandem battery 100 of the embodiment of the present invention realizes the complementarity of the crystalline silicon bottom battery 1 and the perovskite top battery 3 through the stacking design, so that the conversion efficiency of the overall battery is significantly improved. Due to the use of the tunneling layer 2 and the through-hole design, the present invention not only avoids the influence of the high-temperature sintering process on the perovskite battery, reduces the risk of thermal damage to the perovskite layer 303, but also avoids the use of ultra-low temperature metal slurry with high cost, and adopts mature technical preparation process, which helps to reduce the manufacturing cost of the battery. Through a specific structural design, the present invention simplifies the manufacturing process of the battery, which is conducive to large-scale production. The present invention is not only applicable to the perovskite crystalline silicon tandem battery 100, but can also be extended to other types of tandem batteries, and has a broad application prospect.

[0036] In some embodiments, the insulating glue 5 is a traceless insulating glue 5 .

[0037] The traceless insulating glue 5 generally has good heat resistance and can better protect the perovskite layer 303 from high temperature. The traceless insulating glue 5 provides electrical insulation without affecting its insulation effect due to temperature changes. The traceless insulating glue 5 can provide additional mechanical support to help the battery structure remain stable, especially in high temperature or vibration environments.

[0038] In some embodiments, the positive metal electrode 4 is a copper wire or a silver-plated copper wire. Copper is a material with good electrical conductivity, and the silver-plated copper wire has better electrical conductivity due to the high electrical conductivity of silver, which is beneficial to improving the output performance and overall efficiency of the battery.

[0039] In some embodiments, the crystalline silicon bottom cell 1 includes a second transparent conductive layer 101 and a third transparent conductive layer located on both sides, the second transparent conductive layer 101 is connected to the tunneling layer 2, the bottom wall of the groove 305 is located on the second transparent conductive layer 101, and a back metal electrode 6 is provided on the third transparent conductive layer.

[0040] The transparent conductive layers on both sides can increase the absorption path of light in the battery and improve the utilization rate of light by the battery. The provision of the transparent conductive layer and the back metal electrode 6 helps to improve the transmission and collection of charges, thereby improving the conversion efficiency of the battery. By adding transparent conductive layers on both sides of the crystalline silicon bottom battery 1, the structural design of the battery can be optimized to make it more compact, which helps to improve the energy density of the battery. The provision of the transparent conductive layer and the back metal electrode 6 also helps to improve the mechanical strength and stability of the battery.

[0041] In some embodiments, the second transparent conductive layer 101 and the third transparent layer 102 include an N-doped layer 103 , a first passivation layer 104 , a crystalline silicon substrate 105 , a second passivation layer 106 and a P-doped layer 107 arranged in sequence from top to bottom.

[0042] The N-doped layer 103 is usually used to improve the transmission efficiency of the electrons of the crystalline silicon substrate 105. N-type doping means that pentavalent elements such as phosphorus are doped into the silicon material, thereby providing additional free electrons and facilitating the flow of electrons. The main function of the first passivation layer 104 is to reduce the defect state density on the surface of the crystalline silicon substrate 105, reduce surface recombination, and improve the open circuit voltage and overall efficiency of the battery. It is usually composed of silicon oxide, silicon nitride or other passivation materials. The crystalline silicon substrate 105 is the core part of the battery, responsible for absorbing light energy and generating electron-hole pairs. Crystalline silicon is a widely used solar cell material favored for its stability and mature manufacturing process. Similar to the first passivation layer 104, the second passivation layer 106 further reduces the defect states on the surface of the crystalline silicon substrate 105 and improves the performance of the battery. It can also help protect the crystalline silicon substrate 105 from the external environment. The P-doped layer 107 is located at the bottom of the crystalline silicon substrate 105 and is used to form a P-type semiconductor. P-type doping provides holes and forms a PN junction with the N-type doped layer, which is the basis for solar cells to generate electricity.

[0043] The present invention also discloses a method for preparing a perovskite crystalline silicon stacked cell 100, comprising:

[0044] S1, providing a crystalline silicon bottom cell 1;

[0045] S2, preparing a tunneling layer 2 on the front side of the crystalline silicon bottom cell 1;

[0046] S3, sequentially preparing a hole transport layer 304, a perovskite layer 303 and an electron transport layer 302 on the tunneling layer 2;

[0047] S4, opening a through hole in each of the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2, so that a groove 305 is defined between the hole wall of each of the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2 and the crystalline silicon bottom cell 1;

[0048] S5, placing insulating glue 5 in the groove 305;

[0049] S6, placing the positive metal electrode 4 on the insulating glue 5 and curing the insulating glue 5 to fix the positive metal electrode 4;

[0050] S7 , preparing a first transparent conductive layer 301 on the electron transport layer 302 and electrically connecting the first transparent conductive layer 301 to the positive metal electrode 4 .

[0051] Specifically,

[0052] Step S1, providing a crystalline silicon bottom cell 1, which is the starting point of the manufacturing process, and providing the crystalline silicon bottom cell 1 as the basis of the entire stacked cell. The crystalline silicon bottom cell 1 usually has a certain photoelectric conversion efficiency, good stability and mature production process.

[0053] Step S2: preparing a tunneling layer 2 on the front side of the crystalline silicon bottom cell 1

[0054] Purpose: The main function of the tunneling layer 2 is to connect the crystalline silicon bottom cell 1 and the top perovskite layer 303, while reducing interface defects and improving charge transfer efficiency.

[0055] Step S3, sequentially preparing a hole transport layer 304, a perovskite layer 303 and an electron transport layer 302 on the tunneling layer 2, this step constructs the basic structure of the perovskite top cell 3. The hole transport layer 304 and the electron transport layer 302 are responsible for the transport of holes and electrons respectively, while the perovskite layer 303 is a light absorption layer responsible for converting light energy into electrical energy.

[0056] Step S4, opening a through hole on each of the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2. The purpose of opening the through hole is to form grooves 305. These grooves 305 will be used to place the insulating glue 5 and the positive metal electrode 4, so as to achieve good electrical connection and mechanical fixation.

[0057] Step S5 , disposing insulating glue 5 in the groove 305 . The insulating glue 5 is used to isolate charges between different layers, prevent charge leakage, and fix the positive metal electrode 4 .

[0058] Step S6: Place the positive metal electrode 4 on the insulating glue 5 and cure the insulating glue 5 to fix the positive metal electrode 4. The positive metal electrode 4 is an important component of the battery and is used to collect and conduct current. It is placed on the insulating glue 5 and cured to ensure the fixation of the electrode and the overall stability of the battery.

[0059] Step S7: prepare a first transparent conductive layer 301 on the electron transport layer 302 and electrically connect the first transparent conductive layer 301 to the positive metal electrode 4. The first transparent conductive layer 301 is used to further collect the electrons generated by the top perovskite layer 303 and transmit them to the positive metal electrode 4. The electrical connection ensures the effective extraction of current.

[0060] The preparation method of the perovskite crystalline silicon tandem battery 100 of the embodiment of the present invention realizes the complementarity of the crystalline silicon bottom battery 1 and the perovskite top battery 3, so that the conversion efficiency of the overall battery is significantly improved. Due to the use of the tunneling layer 2 and the through-hole design, the present invention not only avoids the influence of the high-temperature sintering process on the perovskite battery, reduces the risk of thermal damage to the perovskite layer 303, but also avoids the use of ultra-low temperature metal slurry with high cost, and adopts mature technical preparation process, which helps to reduce the manufacturing cost of the battery. Through a specific structural design, the present invention simplifies the manufacturing process of the battery, which is conducive to large-scale production. The present invention is not only applicable to the preparation method of the perovskite crystalline silicon tandem battery 100, but can also be extended to the preparation method of other types of tandem batteries, and has a broad application prospect.

[0061] In some embodiments, in S4, laser drilling is used. In step S4, laser drilling equipment is used to accurately laser cut the electron transport layer 302, the perovskite layer 303, the hole transport layer 304 and the tunneling layer 2 to form the required through holes. According to the aperture size and shape to be processed, the laser power, pulse width, frequency and other parameters are adjusted to achieve the best cutting effect. During the processing, the scanning path of the laser beam is controlled to ensure that the shape and position of the through hole meet the design requirements. Use appropriate auxiliary gases, such as argon or nitrogen, to help blow away the waste residue generated by cutting and reduce the impact on the processing process. After the processing is completed, the through hole is inspected to ensure that the aperture, shape and position meet the predetermined design standards. By using laser drilling technology in step S4, it can be ensured that the preparation process of the perovskite crystalline silicon stacked battery 100 is more accurate and efficient, thereby improving the performance and reliability of the battery.

[0062] In some embodiments, the insulating glue 5 is printed or sprayed in the groove 305 .

[0063] For example, the insulating glue 5 can be evenly printed into the groove 305 using a roller printer or a screen printer, or using a spraying device such as an air spray gun to evenly spray the insulating glue 5 into the groove 305. Printing technology allows the distribution of the insulating glue 5 to be precisely controlled in the groove 305, and is suitable for grooves 305 of complex shapes and sizes. Spraying can quickly cover a large area, and for irregular or complex grooves 305, spraying can provide uniform coverage. By printing or spraying, the thickness and distribution of the insulating glue 5 can be precisely controlled, which is crucial to ensuring the electrical performance and mechanical stability of the battery.

[0064] In some embodiments, in S6, the insulating adhesive 5 is cured by air drying or UV irradiation.

[0065] After the insulating adhesive 5 is coated or sprayed in the groove 305, it is placed in a well-ventilated environment, and the evaporation of the solvent is accelerated by natural ventilation or heating until the insulating adhesive 5 is completely cured. Air-drying curing does not require the use of any chemical initiator or light source, is environmentally friendly, and does not cause pollution. The air-drying curing process does not require special equipment, is simple to operate, and is low in cost.

[0066] UV irradiation curing utilizes ultraviolet light to irradiate the insulating glue 5, excite the photoinitiator in the glue, initiate a polymerization reaction, and thus rapidly cure the glue. After the insulating glue 5 is coated or sprayed in the groove 305, it is placed under a UV curing lamp. Through the irradiation of the UV lamp, the photoinitiator in the insulating glue 5 generates free radicals, which initiates a polymerization reaction of the glue and achieves curing. UV curing can complete curing within a few seconds to tens of seconds, greatly shortening the production cycle. Rapid curing helps to improve production efficiency, especially in mass production. The degree of curing can be precisely controlled by adjusting the power and irradiation time of the UV lamp during the UV curing process.

[0067] The present invention further discloses a photovoltaic module, the perovskite crystalline silicon stacked cell 100 described in any one of the above embodiments.

[0068] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0069] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0070] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0071] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0072] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0073] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A perovskite crystalline silicon tandem battery, characterized in that: include: Crystalline silicon bottom cell; A tunneling layer, wherein the tunneling layer is arranged on the front side of the crystalline silicon bottom cell; A perovskite top cell, wherein the perovskite top cell is disposed on the tunneling layer, and the perovskite top cell comprises a first transparent conductive layer, an electron transport layer, a perovskite layer and a hole transport layer which are sequentially disposed from top to bottom, and each of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer is provided with a through hole, so that a groove is defined between a hole wall of each of the through holes of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer and the crystalline silicon bottom cell; A positive metal electrode is disposed in the groove through an insulating adhesive and is electrically connected to the first transparent conductive layer.

2. The perovskite crystalline silicon tandem cell according to claim 1, characterized in that: The insulating glue is a traceless insulating glue.

3. The perovskite crystalline silicon tandem cell according to claim 1, characterized in that: The positive metal electrode is a copper wire or a silver-plated copper wire.

4. The perovskite crystalline silicon tandem cell according to claim 1, characterized in that: The crystalline silicon bottom cell includes a second transparent conductive layer and a third transparent conductive layer located on both sides, the second transparent conductive layer is connected to the tunneling layer, the bottom wall of the groove is located on the second transparent conductive layer, and a back metal electrode is provided on the third transparent conductive layer.

5. The perovskite crystalline silicon tandem cell according to claim 4, characterized in that: An N-doped layer, a first passivation layer, a crystalline silicon substrate, a second passivation layer and a P-doped layer are sequentially arranged from top to bottom between the second transparent conductive layer and the third transparent layer.

6. A method for preparing a perovskite crystalline silicon tandem battery, wherein the perovskite crystalline silicon tandem battery is the perovskite crystalline silicon tandem battery according to any one of claims 1 to 5, characterized in that: include: S1, provide crystalline silicon bottom cells; S2, preparing a tunneling layer on the front side of the crystalline silicon bottom cell; S3, sequentially preparing a hole transport layer, a perovskite layer and an electron transport layer on the tunneling layer; S4, opening a through hole in each of the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer, so that a groove is defined between the hole wall of each of the through holes in the electron transport layer, the perovskite layer, the hole transport layer and the tunneling layer and the crystalline silicon bottom cell; S5, placing insulating glue in the groove; S6, placing a positive metal electrode on the insulating glue and curing the insulating glue to fix the positive metal electrode; S7, preparing a first transparent conductive layer on the electron transport layer and electrically connecting the first transparent conductive layer to the positive metal electrode.

7. The method for preparing a perovskite crystalline silicon tandem battery according to claim 6, characterized in that: In S4, laser drilling is used.

8. The method for preparing a perovskite crystalline silicon tandem battery according to claim 6, characterized in that: Insulation glue is printed or sprayed in the groove.

9. The method for preparing a perovskite crystalline silicon tandem battery according to claim 6, characterized in that: In S6, the insulating adhesive is cured by air drying or UV irradiation.

10. A photovoltaic module, characterized in that: The invention comprises the perovskite crystalline silicon tandem battery as described in any one of claims 1 to 5.

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