Thin film and preparation method thereof, light-emitting device and preparation method thereof, and display device

Abstract

The embodiment of the invention belongs to the field of display, and relates to a thin film and a preparation method thereof, a light-emitting device and a preparation method thereof, and a display device. The film preparation method comprises the following steps: providing a substrate, and arranging a solution containing inorganic nanoparticles and a first solvent on the substrate to form a first precursor film; placing the first precursor film in a first atmosphere for first modification treatment to obtain a film; the first atmosphere comprises steam formed by a first solvent and a surface modifier. And introducing a first atmosphere containing a surface modifier and a first solvent to modify the first precursor film containing the inorganic nanoparticles so as to passivate the surface defects of the inorganic nanoparticles and rearrange the originally agglomerated inorganic nanoparticles, thereby improving the film forming quality of the film.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to a thin film and a method for preparing the same, a light-emitting device and a method for preparing the same, and a display device. Background Art

[0002] Electroluminescent devices include OLED (Organic Light-Emitting Diode) and QLED (Quantum Dot Light Emitting Diodes). QLED has the advantages of high color saturation, wet process preparation and high stability, which has attracted more and more attention in the research of QLED. OLED has a wide range of applications in display, lighting, smart wearable and other fields due to its good self-luminous properties, high contrast, fast response and flexible display.

[0003] An inorganic nanoparticle layer is usually provided in an electroluminescent device. However, due to the presence of gap defects in the inorganic nanoparticle layer, its carrier transport performance is reduced. Summary of the invention

[0004] Based on this, the embodiments of the present application provide a thin film and a method for preparing the same, a light-emitting device and a method for preparing the same, and a display device.

[0005] In order to solve the above technical problems, the present application provides a thin film preparation method, which adopts the following technical solution:

[0006] A method for preparing a thin film comprises the following steps:

[0007] Providing a substrate, and placing a solution containing inorganic nanoparticles and a first solvent on the substrate to form a first precursor film;

[0008] placing the first precursor film in a first atmosphere for a first modification treatment to obtain a film;

[0009] The first atmosphere includes vapor formed by a first solvent and a surface modifying agent.

[0010] In order to solve the above technical problems, the embodiment of the present application further provides a film, which adopts the following technical solution:

[0011] A film is prepared by the film preparation method as described above.

[0012] In order to solve the above technical problems, the embodiment of the present application further provides a method for preparing a light-emitting device, which adopts the following technical solution:

[0013] A method for preparing a light emitting device comprises the following steps:

[0014] Providing a light-emitting device preform, wherein the light-emitting device preform comprises a first electrode;

[0015] Preparing a thin film on the light-emitting device preform to obtain an electronic functional layer;

[0016] Preparing a light-emitting functional layer on the electronic functional layer;

[0017] Preparing a second electrode on the light-emitting functional layer;

[0018] Alternatively, the method for preparing the light emitting device comprises the following steps:

[0019] Providing a light-emitting device preform, wherein the light-emitting device preform comprises a second electrode;

[0020] Preparing a light-emitting functional layer on the light-emitting device preform;

[0021] Preparing a thin film on the light-emitting functional layer to obtain an electronic functional layer;

[0022] preparing a first electrode on the electronic functional layer;

[0023] Wherein, the film is prepared by the film preparation method as described above, or the film is the film as described above.

[0024] In order to solve the above technical problems, the embodiment of the present application further provides a light emitting device, which adopts the following technical solution:

[0025] A light emitting device, comprising: a first electrode, a second electrode, a light emitting functional layer and an electronic functional layer, wherein the light emitting functional layer is arranged between the first electrode and the second electrode; the electronic functional layer is arranged between the first electrode and the light emitting functional layer;

[0026] Wherein, the electronic functional layer is prepared by the thin film preparation method as described above, or the electronic functional layer is the thin film as described above.

[0027] In order to solve the above technical problems, the embodiment of the present application further provides a display device, which adopts the following technical solution:

[0028] A display device includes a light-emitting device prepared by the preparation method as described above, or includes the light-emitting device as described above.

[0029] Compared with the prior art, the embodiments of the present application mainly have the following beneficial effects: a first atmosphere including a surface modifier and a first solvent is introduced to modify a first precursor film containing inorganic nanoparticles to passivate surface defects of the inorganic nanoparticles and rearrange the originally agglomerated inorganic nanoparticles, thereby improving the film formation quality of the thin film. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the scheme of the present application, a brief introduction will be given below to the drawings required for use in the embodiments or descriptions. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0031] Figure 1 is a flow chart of an embodiment of a thin film preparation method of the present application;

[0032] Figure 2 is a flow chart of an embodiment of a method for preparing a light-emitting device of the present application;

[0033] Figure 3 is a flow chart of another embodiment of a method for preparing a light-emitting device of the present application;

[0034] Figure 4 is a schematic diagram of a light emitting device of the present application, wherein the light emitting device is an inverted device;

[0035] Figure 5 is an AFM image of the electronic functional layer in Examples 1 and 5 of the present application;

[0036] Figure 6 This is an AFM image of the electronic functional layer in Comparative Example 1 of the present application;

[0037] Figure 7 is an AFM image of the light-emitting functional layer in Example 1 of the present application;

[0038] Figure 8 This is an AFM image of the light-emitting functional layer in Comparative Example 2 of the present application.

[0039] Figure numerals: 1. second electrode; 2. hole transport layer; 3. light-emitting functional layer; 4. electronic functional layer; 5. first electrode. DETAILED DESCRIPTION

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0041] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0042] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings.

[0043] The present application provides a method for preparing a thin film. Figure 1 As shown, the method for preparing the electronic functional film comprises the following steps:

[0044] S11, providing a substrate, and placing a solution containing inorganic nanoparticles and a first solvent on the substrate to form a first precursor film;

[0045] S12, placing the first precursor film in a first atmosphere for a first modification treatment to obtain an electronic functional film; the first atmosphere includes steam formed by a first solvent and a surface modifier.

[0046] In this embodiment, a substrate is first provided, and a solution containing inorganic nanoparticles and a first solvent is disposed on the substrate to form a first precursor film; finally, the first precursor film is placed in a first atmosphere for a first modification treatment to obtain a film; the first atmosphere includes vapor formed by a first solvent and a surface modifier.

[0047] In this embodiment, a first atmosphere including a surface modifier and a first solvent is introduced to modify a first precursor film containing inorganic nanoparticles, so that the surface modifier can react with the surface of the inorganic nanoparticles to passivate the surface defects of the inorganic nanoparticles and rearrange the originally agglomerated inorganic nanoparticles to obtain a more densely arranged film, thereby improving the film formation quality.

[0048] In this embodiment, the surface modifier is first dissolved in the first solvent, and then the first solvent and the surface modifier are converted into steam by external heating, and then the first modification treatment is performed, thereby avoiding multiple steam introductions, making the operation convenient and eliminating the need for complex equipment.

[0049] In this embodiment, the film can be used as an electronic functional layer and applied to light-emitting devices, specifically quantum dot light-emitting devices, playing the role of an electron transport layer and being arranged adjacent to the light-emitting functional layer, specifically a quantum dot light-emitting layer. After eliminating the surface defects of the inorganic nanoparticles in this embodiment, the excitons at the interface between the film and the light-emitting functional layer do not dissociate, thereby effectively avoiding quantum dot fluorescence quenching, thereby improving the efficiency of the light-emitting device.

[0050] Furthermore, the inorganic nanoparticles are selected from at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials; the metal oxide is selected from at least one of ZnO, BaO, TiO2, and SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, and SnO2, and the doping element can be selected from at least one of Al, Mg, Li, In, and Ga; the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS.

[0051] Furthermore, the first solvent is an alcohol ether organic solvent.

[0052] In this embodiment, the alcohol ether organic solvent is a polar solvent, so that the first solvent can both disperse the inorganic nanoparticles and dissolve the surface modifier.

[0053] Furthermore, the surface modifier is at least one of a silane modifier and an amine modifier.

[0054] In this embodiment, the Si-O bond in the silane modifier and the hydroxyl ZnO-(OH) x Reaction to generate Si-O-Zn, thereby passivating the surface hydroxyl defects; the amino group R-NH2 in the amine modifier reacts with the oxygen group ZnO-(O2) on the surface of the inorganic nanoparticles y Reaction to generate ZnO-(NO2) y -R thus plays the role of passivating the surface O2 defects.

[0055] Furthermore, after the step of placing the first precursor film in a first atmosphere for a first modification treatment to obtain a film, the method further comprises:

[0056] The film is placed in a third atmosphere for a purge treatment.

[0057] In this embodiment, the third atmosphere is nitrogen; nitrogen has an inert characteristic, and nitrogen purging can avoid chemical reactions with the film.

[0058] In this embodiment, a sufficient purge treatment is performed after the first modification treatment to remove the residual surface modifier and the vapor of the first solvent on the film, so that the surface modifier that has not participated in the reaction is purged away to prevent the surface modifier from remaining on the surface of the film and further modifying the film.

[0059] Furthermore, the volume ratio of the surface modifier to the first solvent is (1:9) to (8:2).

[0060] In this embodiment, the volume ratio of the surface modifier to the first solvent is greater than 1:9, which ensures the content of the surface modifier and further ensures the modification effect on the surface defects of the inorganic nanoparticles; the volume ratio of the surface modifier to the first solvent is limited to greater than 8:2, which ensures the content of the first solvent and further ensures the effect on the rearrangement of the inorganic nanoparticles.

[0061] In some optional implementations of this embodiment, the volume ratio of the surface modifier to the first solvent is any one of 1:9, 2:8, 3:7, 4:6, 5:5, 6:4, 7:3, 8:2, etc., or a range between any two of them.

[0062] Preferably, the volume ratio of the surface modifier to the first solvent is (3:7) to (5:5).

[0063] Furthermore, the absolute value of the difference in boiling point between the surface modifier and the first solvent is 0°C to 50°C.

[0064] In this embodiment, the boiling points of the surface modifier and the first solvent are close, which facilitates the uniform mixing of their vapors, so that the surface modifier can fully react with the surface defects of the first precursor film, further improving the film formation quality of the film.

[0065] Furthermore, the silane modifier is selected from Formula I:

[0066]

[0067] Wherein, R1, R2, R3, and R4 are independently selected from -H, -(CH2) n1 -CH3, -(CH2) n2 -O-(CH2) n3 -CH3, -(CH2) n4 -NH2, n1 to n4 are independently selected from integers of 0 to 4;

[0068] The silane modifier includes at least one of an alkoxysilane modifier and an aminosilane modifier. When the silane modifier is the alkoxysilane modifier, at least one of R1, R2, R3, and R4 is selected from -(CH2) n2-O-(CH2) n3 -CH3; and / or, when the silane modifier is the aminosilane modifier, at least one of R1, R2, R3, and R4 is selected from -(CH2) n2 -O-(CH2) n3 -CH3 and -(CH2) n4 -NH2; and / or

[0069] The amine modifier is independently selected from at least one of a C3-C5 alkyl group having at least one amine group, and a substituted or unsubstituted aromatic group having a ring atom number of C6-C8; and / or

[0070] The first solvent is independently selected from at least one of formula II, III, and IV:

[0071]

[0072] Among them, R5, R6, R7, R9, R 11 and R 14 are independently selected from -(CH2) n5 -OH or -(CH2)n6-CH3, n5 and n6 are independently selected from integers from 1 to 6; R8, R 12 and R 13 are independently selected from -(CH2) n7 -, n7 is independently selected from 1 to 6 integers; Formula II, III, IV each have at least one -(CH2) n5 -OH.

[0073] Furthermore, the substituted or unsubstituted aromatic group having ring atoms of C6 to C8 is a phenyl group substituted by a C1 to C3 alkyl group.

[0074] Furthermore, the surface modifier includes a silane modifier and an amine modifier.

[0075] Furthermore, the surface modifier includes the alkoxysilane modifier and the amine modifier, and the molar ratio of the alkoxysilane modifier to the amine modifier is (2:1) to (10:1).

[0076] In some optional implementations of this embodiment, the molar ratio of the alkoxysilane modifier to the amine modifier is any one of 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, etc., or a range between any two of them.

[0077] Furthermore, the surface modifier includes the aminosilane modifier and the amine modifier, and the molar ratio of the aminosilane modifier to the amine modifier is (1:1) to (100:1).

[0078] In some optional implementations of this embodiment, the molar ratio of the aminosilane modifier to the amine modifier is any one of 1:1, 10:1, 20:1, 30:1, 40:1, 50:1, 60:1, 70:1, 80:1, 90:1, 100:1, etc., or a range between any two of them.

[0079] Furthermore, the surface modifier includes the alkoxysilane modifier and the aminosilane modifier; the molar ratio of the alkoxysilane modifier to the aminosilane modifier is (0.01:1) to (10:1).

[0080] In some optional implementations of this embodiment, the molar ratio of the alkoxysilane modifier to the aminosilane modifier is any one of 0.01, 1:1, 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, etc., or a range between any two of them.

[0081] Furthermore, when the silane modifier is the alkoxysilane modifier, it is selected from at least one of tetramethoxysilane, trimethoxysilane, methyltrimethoxysilane, ethyltrimethoxysilane, dimethoxysilane, methyldimethoxysilane, dimethyldimethoxysilane, tetraethoxysilane, triethoxysilane, methyltriethoxysilane, ethyltriethoxysilane, diethoxysilane, methyldiethoxysilane and dimethyldiethoxysilane.

[0082] In this embodiment, the Si-O bond in the alkoxysilane modifier and the hydroxyl ZnO-(OH) x Reaction to generate Si-O-Zn, thus passivating the effect of surface hydroxyl defects.

[0083] Furthermore, when the silane modifier is the aminosilane modifier, it is selected from at least one of 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, and 3-aminopropylmethyldiethoxysilane.

[0084] In this embodiment, the Si-O bond in the aminosilane modifier and the hydroxyl ZnO-(OH) x Reaction to generate Si-O-Zn, thereby passivating the surface hydroxyl defects; the amino group R-NH2 in the above aminosilane modifier reacts with the oxygen group ZnO-(O2) on the surface of the inorganic nanoparticles y Reaction to generate ZnO-(NO2) y -R thus plays the role of passivating the surface O2 defects.

[0085] Furthermore, the amine modifier is selected from at least one of n-propylamine, isopropylamine, propylenediamine, n-butylamine, isobutylamine, sec-butylamine, butylenediamine, n-pentylamine, isopentylamine, pentamethylenediamine, aniline, o-toluidine, p-toluidine, p-phenylenediamine, o-phenylenediamine, m-phenylenediamine, 4-methyl-m-phenylenediamine, 2,6-dimethylaniline, and 3,4-dimethylaniline.

[0086] In this embodiment, the amino group R-NH2 in the above-mentioned amine modifier and the oxygen group ZnO-(O2) on the surface of the inorganic nanoparticles y Reaction to generate ZnO-(NO2) y -R thus plays the role of passivating the surface O2 defects.

[0087] Further, the first solvent is selected from at least one of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol isopropyl ether, ethylene glycol butyl ether, ethylene glycol tert-butyl ether, ethylene glycol hexyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol n-propyl ether, propylene glycol isopropyl ether, propylene glycol n-butyl ether, propylene glycol tert-butyl ether, diethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl ether, diethylene glycol diethyl ether, diethylene glycol butyl ether, diethylene glycol dibutyl ether, diethylene glycol hexyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether, dipropylene glycol butyl ether, triethylene glycol ethyl ether, tripropylene glycol methyl ether and tripropylene glycol butyl ether.

[0088] In this embodiment, the first solvent activates and migrates the inorganic nanoparticles during baking, so that the originally aggregated inorganic nanoparticles are rearranged, and the steam atmosphere can activate and migrate the nanoparticle functional materials during baking, so that the originally aggregated nanoparticle functional materials are rearranged.

[0089] Preferably, the surface modifier is selected from tetramethoxysilane, ethyltrimethoxysilane, tetraethoxysilane, triethoxysilane, methyltriethoxysilane, and ethyltriethoxysilane, and the first solvent is selected from ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol isopropyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol n-propyl ether, and propylene glycol isopropyl ether.

[0090] In this embodiment, the boiling points of the surface modifier and the first solvent are about 120-160° C., and the boiling points of the two are close, so the vapors of the two are easy to mix.

[0091] Preferably, the surface modifier is selected from 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldiethoxysilane, and the first solvent is selected from diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol diethyl ether, diethylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, and dipropylene glycol butyl ether.

[0092] In this embodiment, the boiling points of the surface modifier and the first solvent are about 200° C., and the boiling points of the two are close to each other, so that the vapors of the two are easily mixed.

[0093] Preferably, the surface modifier is selected from o-toluidine, p-toluidine, p-phenylenediamine, o-phenylenediamine, 2,6-dimethylaniline, and 3,4-dimethylaniline, and the first solvent is selected from diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol dibutyl ether, diethylene glycol hexyl ether, dipropylene glycol methyl ether, dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether, dipropylene glycol butyl ether, triethylene glycol ethyl ether, and tripropylene glycol butyl ether.

[0094] In this embodiment, the boiling points of the surface modifier and the first solvent are about 200-250° C., and the boiling points of the two are close, so the vapors of the two are easy to mix.

[0095] Furthermore, before placing the first precursor film in a first atmosphere for a first modification treatment, the method further includes: performing a first drying treatment on the first precursor film. In the first drying treatment, the first precursor film is placed in a vacuum and heated, wherein the vacuum degree is 1 to 1000 Pa, the heating temperature is 10 to 40° C., and the time is 1 to 10 minutes.

[0096] In some optional implementations of this embodiment, the vacuum degree of the first drying treatment is any one of 1Pa, 100Pa, 200Pa, 300Pa, 400Pa, 500Pa, 600Pa, 700Pa, 800Pa, 900Pa, 1000Pa, etc., or a range between any two of them.

[0097] In some optional implementations of this embodiment, the heating temperature of the first drying treatment is any one of 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, etc., or a range between any two of them.

[0098] In some optional implementations of this embodiment, the time for the first drying treatment is any one of 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, etc., or a range between any two of them.

[0099] Furthermore, in the first modification treatment, the first precursor film is heated, wherein the heating temperature is 60 to 120° C. and the heating time is 5 to 15 minutes.

[0100] In some optional implementations of this embodiment, the heating temperature of the first modification treatment is any one of 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, etc., or a range between any two of them.

[0101] In some optional implementations of this embodiment, the time of the first modification treatment is any one of 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, 15min, etc., or a range between any two of them.

[0102] The embodiment of the present application also provides a thin film, which is prepared using the thin film preparation method as described above.

[0103] In this embodiment, a first atmosphere including a surface modifier and a first solvent is introduced to modify a first precursor film containing inorganic nanoparticles, so that the surface modifier can react with the surface of the inorganic nanoparticles to passivate the surface defects of the inorganic nanoparticles and rearrange the originally agglomerated inorganic nanoparticles to obtain a more densely arranged film, thereby improving the film formation quality.

[0104] In this embodiment, the film can be used as an electronic functional layer and applied to light-emitting devices, specifically quantum dot light-emitting devices, playing the role of an electron transport layer and being arranged adjacent to the light-emitting functional layer, specifically a quantum dot light-emitting layer. After eliminating the surface defects of the inorganic nanoparticles in this embodiment, the excitons at the interface between the film and the light-emitting functional layer do not dissociate, thereby effectively avoiding quantum dot fluorescence quenching, thereby improving the efficiency of the light-emitting device.

[0105] The present application also provides a method for preparing a light emitting device. Figure 2 As shown, the following steps are included:

[0106] S21, providing a light-emitting device preform, wherein the light-emitting device preform comprises a first electrode;

[0107] S22, preparing a thin film on the light-emitting device preform to obtain an electronic functional layer;

[0108] S23, preparing a light-emitting functional layer on the electronic functional layer;

[0109] S24, preparing a second electrode on the light-emitting functional layer;

[0110] Wherein, the film is prepared by the film preparation method as described above, or the film is the film as described above.

[0111] Or, if Figure 3 As shown, the method for preparing the light emitting device comprises the following steps:

[0112] S31, providing a light-emitting device preform, wherein the light-emitting device preform comprises a second electrode;

[0113] S32, preparing a light-emitting functional layer on the light-emitting device preform;

[0114] S33, preparing a thin film on the light-emitting functional layer to obtain an electronic functional layer;

[0115] S34, preparing a first electrode on the electronic functional layer;

[0116] Wherein, the film is prepared by the film preparation method as described above, or the film is the film as described above.

[0117] In this embodiment, a first atmosphere including a surface modifier and a first solvent is introduced to modify a first precursor film containing inorganic nanoparticles, so that the surface modifier can react with the surface of the inorganic nanoparticles to passivate the surface defects of the inorganic nanoparticles and rearrange the originally agglomerated inorganic nanoparticles to obtain a more densely arranged film, thereby improving the film formation quality.

[0118] In this embodiment, after the surface defects of the inorganic nanoparticles are eliminated, the excitons at the interface between the film and the light-emitting functional layer do not dissociate, thereby effectively avoiding the fluorescence quenching of the quantum dots, thereby improving the efficiency of the light-emitting device.

[0119] In this embodiment, the light emitting device may be an inverted device or an upright device.

[0120] In this embodiment, the light-emitting preform includes a substrate and a first electrode or a second electrode disposed on the substrate.

[0121] Furthermore, the step S23, preparing a light-emitting functional layer on the electronic functional layer, specifically comprises:

[0122] Disposing a solution containing a luminescent material and a second solvent on the electronic functional layer to form a second precursor film;

[0123] The second precursor film is placed in a second atmosphere for a second modification treatment to obtain a light-emitting functional layer; the second atmosphere includes vapor formed by a second solvent.

[0124] In this embodiment, when the second precursor film is subjected to the second modification treatment, the vapor of the second solvent is introduced, and the luminescent material is also activated and migrated under the vapor atmosphere of the second solvent, thereby obtaining a luminescent functional layer with good compactness.

[0125] In another embodiment, the step S32, the step of preparing a light-emitting functional layer on the light-emitting device preform, specifically includes:

[0126] Disposing a solution containing a light-emitting material and a second solvent on the light-emitting device preform to form a second precursor film;

[0127] The second precursor film is placed in a second atmosphere for a second modification treatment to obtain a light-emitting functional layer; the second atmosphere includes vapor formed by a second solvent.

[0128] In this embodiment, when the second precursor film is subjected to the second modification treatment, the vapor of the second solvent is introduced, and the luminescent material is also activated and migrated under the vapor atmosphere of the second solvent, thereby obtaining a luminescent functional layer with good compactness.

[0129] Furthermore, the second solvent is selected from at least one of long-chain alkanes, cycloalkanes, aromatic hydrocarbons, and esters.

[0130] In this embodiment, long-chain alkanes, cycloalkanes, aromatic hydrocarbons, and esters are all non-polar solvents, so that the second solvent can disperse the luminescent material. In addition, the first solvent is a polar solvent, and the second solvent is a non-polar solvent. The two are orthogonal, which prevents the upper functional layer solvent from corroding the lower functional layer during the preparation of the light-emitting device. That is, whether the electronic functional layer is prepared first and then the light-emitting functional layer, or the light-emitting functional layer is prepared first and then the electronic functional layer, it does not affect the lower functional layer, so that this embodiment is applicable to both inverted devices and upright devices.

[0131] Furthermore, the second solvent is selected from at least one of nonane, decane, undecane, dodecane, bicyclohexane, tetralin, methyl nonanoate, methyl decanoate, ethyl nonanoate, and ethyl decanoate.

[0132] Furthermore, the light-emitting functional layer is a quantum dot light-emitting layer, the light-emitting material includes at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite nanoparticle material, the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, and the core of the core-shell structure quantum dot includes any one of the single structure quantum dots.

[0133] Further, the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnT e, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, wherein the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPb Te, SnPbSSe, SnPbSeTe and SnPbSTe, the III-V group compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; and / or

[0134] The core of the core-shell structure quantum dot includes any one of the single structure quantum dots, and the shell material of the core-shell structure quantum dot includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS and the single structure quantum dots; and / or

[0135] The perovskite nanoparticle material is an organic metal halide semiconductor material ABX3, wherein A is an organic group, B is a metal element, and X is at least one inorganic perovskite quantum dot among the halogen elements.

[0136] Furthermore, before placing the second precursor film in a second atmosphere for a second modification treatment, the method further includes: performing a second drying treatment on the second precursor film, during which the second drying treatment is performed by placing the second precursor film in a vacuum and heating it, wherein the vacuum degree is 1 to 1000 Pa, the heating temperature is 10 to 40° C., and the time is 1 to 10 minutes.

[0137] In some optional implementations of this embodiment, the vacuum degree of the second drying treatment is any one of 1Pa, 100Pa, 200Pa, 300Pa, 400Pa, 500Pa, 600Pa, 700Pa, 800Pa, 900Pa, 1000Pa, etc., or a range between any two of them.

[0138] In some optional implementations of this embodiment, the heating temperature of the second drying treatment is any one of 10°C, 15°C, 20°C, 25°C, 30°C, 35°C, 40°C, etc., or a range between any two of them.

[0139] In some optional implementations of this embodiment, the time for the second drying treatment is any one of 1 min, 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, etc., or a range between any two of them.

[0140] Furthermore, in the second modification treatment, the second precursor film is heated, wherein the heating temperature is 60-120° C. and the heating time is 5-15 min.

[0141] In some optional implementations of this embodiment, the temperature of the second modification treatment is any one of 60°C, 70°C, 80°C, 90°C, 100°C, 110°C, 120°C, etc., or a range between any two of them.

[0142] In some optional implementations of this embodiment, the time for the second modification treatment is any one of 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, etc., or a range between any two of them.

[0143] Furthermore, the step S24, before preparing the second electrode on the light-emitting functional layer, further includes:

[0144] Preparing a hole functional layer on the light-emitting functional layer;

[0145] Alternatively, the step S32, before preparing the light-emitting functional layer on the light-emitting device preform, further comprises:

[0146] A hole functional layer is prepared on the light emitting device preform.

[0147] Furthermore, the hole functional layer includes a hole injection layer and / or a hole transport layer. When the hole functional layer includes a hole injection layer and a hole transport layer, the hole transport layer is arranged close to the side of the light-emitting functional layer, and the hole injection layer is arranged away from the side of the light-emitting functional layer; the material of the hole transport layer is selected from N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly(9-vinylcarbazole), poly(9,9-dioctylfluorene-CO-N-(4 -butylphenyl) diphenylamine), polyvinyl carbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl) benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazole-9-yl) triphenylamine, 4,4'-bis(9-carbazole) biphenyl, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid), Spiro-NPB, Spiro-TPD, doped or undoped NiO, MoO3, WO3, V2O5, P-type gallium nitride, CrO3, CuO, MoS2, MoSe2, WS3, WSe3, CuS, CuSCN or one or more thereof;

[0148] The material of the hole injection layer is selected from one or more of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, copper phthalocyanine, PMA (phosphomolybdic acid), transition metal oxides, and transition metal sulfur compounds; wherein the transition metal oxides include one or more of NiO, MoO3, WO3, CuO, and Cu2O; the metal sulfur compounds include one or more of MoS2, MoSe2, WS3, WSe3, and CuS.

[0149] Furthermore, the first electrode and the second electrode are each selected from one or more of a metal electrode, a conductive carbon material, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the conductive carbon material includes doped or undoped carbon nanotubes, doped or undoped graphene, doped or undoped graphene oxide, carbon 60, graphite, carbon fiber, porous carbon; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO , ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

[0150] Specifically, the first electrode is a cathode, and the second electrode is an anode.

[0151] Furthermore, the step S22, before preparing a thin film on the light-emitting device preform to obtain an electronic functional layer, further includes:

[0152] preparing an electron injection layer on the light emitting device preform;

[0153] Alternatively, the step S34, before preparing the first electrode on the electronic functional layer, further comprises:

[0154] An electron injection layer is prepared on the electronic functional layer.

[0155] The material of the electron injection layer includes inorganic materials and / or organic materials; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0156] Furthermore, the thickness of the electronic functional layer is 20-60 nm.

[0157] In some optional implementations of this embodiment, the thickness of the electronic functional layer is any one of 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, etc., or in the range between any two of them.

[0158] Furthermore, the thickness of the first electrode is 20-100 nm.

[0159] In some optional implementations of this embodiment, the thickness of the first electrode is any one of 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., or a range between any two of them.

[0160] Furthermore, the thickness of the second electrode is 20-100 nm.

[0161] In some optional implementations of this embodiment, the thickness of the second electrode is any one of 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., or a range between any two of them.

[0162] Furthermore, the hole injection layer has a thickness of 20 to 60 nm.

[0163] In some optional implementations of this embodiment, the thickness of the hole injection layer is any one of 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, etc., or in the range between any two of them.

[0164] Furthermore, the thickness of the hole transport layer is 20-60 nm.

[0165] In some optional implementations of this embodiment, the thickness of the hole transport layer is any one of 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, etc., or a range between any two of them.

[0166] Furthermore, the thickness of the electron injection layer is 20-60 nm.

[0167] In some optional implementations of this embodiment, the thickness of the electron injection layer is any one of 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, etc., or a range between any two of them.

[0168] The present application also provides a light emitting device, such as Figure 4As shown, the light emitting device comprises: a first electrode 5, a second electrode 1, a light emitting functional layer 3 and an electronic functional layer 4, wherein the light emitting functional layer 3 is arranged between the first electrode 5 and the second electrode 1; the electronic functional layer 4 is arranged between the first electrode 5 and the light emitting functional layer 3;

[0169] Wherein, the electronic functional layer is prepared by the thin film preparation method as described above, or the electronic functional layer 4 is the thin film as described above.

[0170] Furthermore, the light-emitting device further comprises a hole transport layer 2 , and the hole transport layer 2 is arranged between the second electrode 1 and the quantum dot film 3 .

[0171] An embodiment of the present application further provides a display device, comprising the light-emitting device in any of the above embodiments or a light-emitting device manufactured by the manufacturing method in any of the above embodiments.

[0172] Exemplarily, the display device may be a terminal such as a television, a monitor, a mobile phone, a tablet computer, or may be a gaming device, an augmented reality (AR) device, a virtual reality (VR) device, a data storage device, an audio playback device, a video playback device, a wearable device, or other device with a display screen, wherein the wearable device may be a smart bracelet, smart glasses, a smart watch, smart decoration, etc.

[0173] The above scheme is further described below in conjunction with specific implementation examples. The preferred embodiments of the present invention are described in detail as follows:

[0174] Example 1

[0175] (1) Preparation of thin films

[0176] Printing a solution in which the first solvent is ethylene glycol methyl ether and the inorganic nanoparticles are ZnO on the provided Ag cathode substrate using an inkjet printing method to obtain a first liquid film;

[0177] The substrate printed with the first liquid film is transferred to a vacuum drying chamber and subjected to a first drying treatment of vacuum drying for 5 minutes to remove the ethylene glycol methyl ether solvent, thereby obtaining a first precursor film having a thickness of 40 nm;

[0178] The substrate with the first precursor film deposited thereon is transferred to a baking chamber for a first modification treatment at 100° C. for 15 min; at the same time, a first atmosphere is continuously introduced into the baking chamber, wherein the first atmosphere includes steam formed by tetramethoxysilane as a surface modifier and ethylene glycol methyl ether as a first solvent, to obtain a film;

[0179] After baking, use N2 to fully purge the baking chamber to remove residual solvent vapor and keep the interior of the chamber clean to avoid affecting the next step.

[0180] (2) Preparation of light-emitting functional layer

[0181] Printing a solution in which the second solvent is tetralin and the luminescent material is CdSe on the film by an inkjet printing method to obtain a second liquid film;

[0182] The substrate printed with the second liquid film is transferred to a vacuum drying chamber and subjected to a second drying treatment of vacuum drying for 5 minutes to remove the tetralin solvent, thereby obtaining a second precursor film with a thickness of 20 nm;

[0183] The substrate on which the second precursor film is deposited is transferred to a baking chamber for a second modification treatment at 100° C. for 15 minutes; and a second atmosphere is continuously introduced into the baking chamber, wherein the second atmosphere includes steam formed by tetralin;

[0184] After baking, use N2 to fully purge the baking chamber to remove residual solvent vapor and keep the interior of the chamber clean to avoid affecting the next step.

[0185] (3) Preparation of hole transport layer

[0186] A poly(9-vinylcarbazole) layer was formed on the light-emitting functional layer by inkjet printing to serve as a hole transport layer with a thickness of 50 nm.

[0187] (4) Preparation of anode

[0188] An IZO transparent conductive film with a thickness of 40 nm was formed on the hole transport layer by sputtering as an anode.

[0189] Example 2

[0190] The difference from Example 1 is that the surface modifier is 3-aminopropyltrimethoxysilane.

[0191] Example 3

[0192] The difference from Example 1 is that the surface modifier is n-propylamine.

[0193] Example 4

[0194] The difference from Example 1 is that the surface modifier includes tetramethoxysilane and propylenediamine, and the molar ratio of tetramethoxysilane:propylenediamine is 6:1.

[0195] Example 5

[0196] The difference from Example 1 is that, when preparing the light-emitting functional layer, the second precursor film is not placed in the second atmosphere for the second modification treatment.

[0197] Comparative Example 1

[0198] The difference from Example 1 is that, when preparing the film, the first precursor film is not placed in the first atmosphere for the first modification treatment.

[0199] Comparative Example 2

[0200] The difference from Example 1 is that when preparing the film, the first precursor film is not placed in the first atmosphere for the first modification treatment; and when preparing the light-emitting functional layer, the second precursor film is not placed in the second atmosphere for the second modification treatment.

[0201] Comparative Example 3

[0202] The difference from Example 1 is that, when preparing the film, the first precursor film is placed in the steam formed by only the first solvent being ethylene glycol methyl ether to perform the first modification treatment.

[0203] Experimental test analysis 1: Performance tests were performed on the light-emitting devices prepared in Examples 1 to 5 and Comparative Examples 1 to 3.

[0204] The test method of external quantum efficiency is: using external quantum efficiency optical test instrument to measure parameters such as voltage, current, brightness, luminescence spectrum, etc., and calculate the external quantum efficiency of the device;

[0205] The LT95 test method for lifespan is: under constant current drive, the time taken for the device brightness to decay to a certain proportion of the maximum brightness is measured, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as LT95.

[0206] The results are shown in Table 1.

[0207] Test subjects External quantum efficiency LT95 Life Example 1 11.7％ 110h Example 2 14.3％ 120h Example 3 16.3％ 140h Example 4 18.2％ 170h Example 5 9.7％ 65h Comparative Example 1 7.8％ 62h Comparative Example 2 6.5％ 50h Comparative Example 3 7.3％ 58h

[0208] Table 1

[0209] As can be seen from Table 1, the external quantum efficiency and LT95 life of Examples 1 to 5 are better than those of Comparative Examples 1 to 3, indicating that the method of the present application can effectively improve the surface defects of the film, and can effectively avoid quantum dot fluorescence quenching when applied to the electronic functional layer, thereby improving the efficiency of the light-emitting device.

[0210] It can be seen from Table 1 that the external quantum efficiency and LT95 life of Comparative Example 1 are better than those of Comparative Example 2, indicating that the efficiency of the light-emitting device can be further improved by performing the first modification treatment and the second modification treatment on the first precursor film and the second precursor film, respectively.

[0211] Experimental test analysis 2: AFM (atomic force microscope) equipment was used to detect the roughness of Examples 1, 5 and Comparative Examples 1, 2. The results are shown in Figures 5 to 8 shown.

[0212] Figure 5 AFM images of the electronic functional layers in Examples 1 and 5 are shown below: Figure 6 is the AFM image of the electronic functional layer in Comparative Example 1; Figure 5 It can be seen that the electronic functional layer is relatively flat, the holes are significantly reduced, and the density is better. Figure 6 It can be seen that the electronic functional layer is relatively rough and has holes, which means that when the first precursor film is subjected to the first modification treatment, the first atmosphere including the steam formed by the first solvent and the surface modifier is introduced, which has the effect of passivating the surface defects of the inorganic nanoparticles, and the steam atmosphere can activate and migrate the inorganic nanoparticles during baking, so that the originally aggregated inorganic nanoparticles are rearranged, and finally a more densely arranged electronic functional layer is obtained.

[0213] Figure 7 is an AFM image of the light-emitting functional layer in Example 1, Figure 8 is the AFM image of the light-emitting functional layer in Comparative Example 2; Figure 7 It can be seen that the light-emitting functional layer is relatively flat, the holes are significantly reduced, and the density is better. Figure 8 It can be seen that the light-emitting functional layer is relatively rough and has holes, which indicates that when the second precursor film is subjected to the second modification treatment, the second atmosphere including the steam formed by the second solvent is introduced, so that the light-emitting material is also activated and migrated under the action of the steam atmosphere, thereby obtaining a light-emitting functional layer with better density.

[0214] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

Claims

1. A method for preparing a thin film, characterized in that: The following steps are involved: Providing a substrate, and placing a solution containing inorganic nanoparticles and a first solvent on the substrate to form a first precursor film; placing the first precursor film in a first atmosphere for a first modification treatment to obtain a film; The first atmosphere includes vapor formed by a first solvent and a surface modifying agent.

2. The thin film preparation method according to claim 1, characterized in that: The inorganic nanoparticles are selected from at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials; the metal oxide is selected from at least one of ZnO, BaO, TiO2 and SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2 and SnO2, and the doping element can be selected from at least one of Al, Mg, Li, In and Ga; the II-VI semiconductor material is selected from at least one of ZnS, ZnSe and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; and / or The first solvent is an alcohol ether organic solvent; and / or The surface modifier is at least one of a silane modifier and an amine modifier; and / or The volume ratio of the surface modifier to the first solvent is (1:9) to (8:2); The absolute value of the difference in boiling point between the surface modifier and the first solvent is 0°C to 50°C.

3. The method for preparing a thin film according to claim 2, characterized in that: The silane modifier is selected from Formula I: Wherein, R1, R2, R3, and R4 are independently selected from -H, -(CH2) n1 -CH3, -(CH2) n2 -O-(CH2) n3 -CH3, -(CH2) n4 -NH2, n1 to n4 are independently selected from integers of 0 to 4; The silane modifier includes at least one of an alkoxysilane modifier and an aminosilane modifier. When the silane modifier is the alkoxysilane modifier, at least one of R1, R2, R3, and R4 is selected from -(CH2) n2 -O-(CH2) n3 -CH3; and / or, when the silane modifier is the aminosilane modifier, at least one of R1, R2, R3, and R4 is selected from -(CH2) n2 -O-(CH2) n3 -CH3 and -(CH2) n4 -NH2; and / or The amine modifier is independently selected from at least one of a C3-C5 alkyl group having at least one amine group, and a substituted or unsubstituted aromatic group having a ring atom number of C6-C8; and / or The first solvent is independently selected from at least one of formula II, III, and IV: Among them, R5, R6, R7, R9, R 11 and R 14 are independently selected from -(CH2) n5 -OH or -(CH2)n6-CH3, n5 and n6 are independently selected from integers from 1 to 6; R8, R 12 and R 13 are independently selected from -(CH2) n7 -, n7 is independently selected from 1 to 6 integers; Formula II, III, IV each have at least one -(CH2) n5 -OH.

4. The thin film preparation method according to claim 3, characterized in that: The surface modifier includes a silane modifier and an amine modifier; and / or The surface modifier comprises the alkoxysilane modifier and the amine modifier, and the molar ratio of the alkoxysilane modifier to the amine modifier is (2:1) to (10:1); and / or, The surface modifier comprises the aminosilane modifier and the amine modifier, and the molar ratio of the aminosilane modifier to the amine modifier is (1:1) to (100:1); and / or, The surface modifier comprises the alkoxysilane modifier and the aminosilane modifier, and the molar ratio of the alkoxysilane modifier to the aminosilane modifier is (0.01:1) to (10:1); and / or The alkoxysilane modifier is selected from at least one of tetramethoxysilane, trimethoxysilane, methyltrimethoxysilane, ethyltrimethoxysilane, dimethoxysilane, methyldimethoxysilane, dimethyldimethoxysilane, tetraethoxysilane, triethoxysilane, methyltriethoxysilane, ethyltriethoxysilane, diethoxysilane, methyldiethoxysilane and dimethyldiethoxysilane; and / or The aminosilane modifier is selected from at least one of 3-aminopropyltrimethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropyltriethoxysilane and 3-aminopropylmethyldiethoxysilane; and / or The amine modifier is selected from at least one of n-propylamine, isopropylamine, propylenediamine, n-butylamine, isobutylamine, sec-butylamine, butylenediamine, n-pentylamine, isopentylamine, pentamethylenediamine, aniline, o-toluidine, p-toluidine, p-phenylenediamine, o-phenylenediamine, m-phenylenediamine, 4-methyl-m-phenylenediamine, 2,6-dimethylaniline, and 3,4-dimethylaniline; and / or The first solvent is selected from at least one of ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol isopropyl ether, ethylene glycol butyl ether, ethylene glycol tert-butyl ether, ethylene glycol hexyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol n-propyl ether, propylene glycol isopropyl ether, propylene glycol n-butyl ether, propylene glycol tert-butyl ether, diethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol ethyl ether, diethylene glycol diethyl ether, diethylene glycol butyl ether, diethylene glycol dibutyl ether, diethylene glycol hexyl ether, dipropylene glycol methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol diethyl ether, dipropylene glycol butyl ether, triethylene glycol ethyl ether, tripropylene glycol methyl ether and tripropylene glycol butyl ether.

5. The film preparation method according to any one of claims 1 to 4, characterized in that: Before placing the first precursor film in the first atmosphere for the first modification treatment, the method further includes: performing a first drying treatment on the first precursor film, wherein the first drying treatment is to place the first precursor film in a vacuum and heat it, wherein the vacuum degree is 1 to 1000 Pa, the heating temperature is 10 to 40° C., and the time is 1 to 10 minutes; and / or In the first modification treatment, the first precursor film is heated, wherein the heating temperature is 60 to 120° C. and the heating time is 5 to 15 minutes.

6. A film, characterized in that: The film is prepared by the film preparation method according to any one of claims 1 to 5.

7. A method for preparing a light emitting device, characterized in that: The following steps are involved: Providing a light-emitting device preform, wherein the light-emitting device preform comprises a first electrode; Preparing a thin film on the light-emitting device preform to obtain an electronic functional layer; Preparing a light-emitting functional layer on the electronic functional layer; Preparing a second electrode on the light-emitting functional layer; Alternatively, the method for preparing the light emitting device comprises the following steps: Providing a light-emitting device preform, wherein the light-emitting device preform comprises a second electrode; Preparing a light-emitting functional layer on the light-emitting device preform; Preparing a thin film on the light-emitting functional layer to obtain an electronic functional layer; preparing a first electrode on the electronic functional layer; Wherein, the film is prepared by the film preparation method according to any one of claims 1 to 5, or the film is the film according to claim 6.

8. The method for preparing a light emitting device according to claim 7, characterized in that: The step of preparing a light-emitting functional layer on the electronic functional layer specifically includes: Disposing a solution containing a luminescent material and a second solvent on the electronic functional layer to form a second precursor film; placing the second precursor film in a second atmosphere for a second modification treatment to obtain a light-emitting functional layer; the second atmosphere includes vapor formed by a second solvent; Alternatively, the step of preparing the light-emitting functional layer on the light-emitting device preform specifically includes: Disposing a solution containing a light-emitting material and a second solvent on the light-emitting device preform to form a second precursor film; The second precursor film is placed in a second atmosphere for a second modification treatment to obtain a light-emitting functional layer; the second atmosphere includes vapor formed by a second solvent.

9. The method for preparing a light emitting device according to claim 8, characterized in that: The second solvent is selected from at least one of long-chain alkanes, cycloalkanes, aromatic hydrocarbons, and esters; and / or The second solvent is selected from at least one of nonane, decane, undecane, dodecane, bicyclohexane, tetralin, methyl nonanoate, methyl decanoate, ethyl nonanoate, and ethyl decanoate; and / or The light-emitting functional layer is a quantum dot light-emitting layer, the light-emitting material includes at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite nanoparticle material, the material of the single structure quantum dot is selected from at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, and the core of the core-shell structure quantum dot includes any one of the single structure quantum dots; and / or Before placing the second precursor film in the second atmosphere for the second modification treatment, the method further includes: performing a second drying treatment on the second precursor film, wherein the second precursor film is placed in a vacuum and heated, wherein the vacuum degree is 1 to 1000 Pa, the heating temperature is 10 to 40° C., and the heating time is 1 to 10 minutes; and / or In the second modification treatment, the second precursor film is heated at a temperature of 60 to 120° C. for a time of 5 to 15 minutes.

10. A light emitting device, characterized in that: include: A first electrode, a second electrode, a light-emitting functional layer and an electronic functional layer, wherein the light-emitting functional layer is disposed between the first electrode and the second electrode; and the electronic functional layer is disposed between the first electrode and the light-emitting functional layer; Wherein, the electronic functional layer is prepared by the thin film preparation method according to any one of claims 1 to 5, or the electronic functional layer is the thin film according to claim 6.

11. A display device, characterized in that: A light-emitting device comprising a light-emitting device prepared by the preparation method according to any one of claims 7 to 9, or a light-emitting device according to claim 10.

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