Semiconductor heterostructure band gap test method and device and computer equipment

Abstract

The invention relates to a semiconductor heterostructure band gap test method and device, computer equipment, a storage medium and a computer program product. The method comprises the following steps: scanning a first semiconductor material sample by adopting a visible spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; scanning the semiconductor heterostructure by using a visible spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; determining band gap information of the first semiconductor material sample according to the diffuse reflection spectrum corresponding to the first semiconductor material sample, and determining band gap information of the semiconductor heterostructure according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure; and obtaining a band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure. By adopting the method, the band gap test accuracy of the two-dimensional material heterojunction can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a bandgap testing method, device, computer equipment, storage medium and computer program product for a semiconductor heterostructure. Background Art

[0002] A two-dimensional material heterojunction is a structure formed by stacking two or more different two-dimensional materials through weak van der Waals forces. These two-dimensional materials can be common layered compounds, compounds or semiconductor alloys. Due to its unique physical and chemical properties, two-dimensional material heterojunctions have great application potential in optoelectronic devices, high-sensitivity infrared detectors, energy conversion and storage, sensors and other fields. Commonly used methods for testing two-dimensional material heterojunctions include: photoluminescence spectroscopy (PL), scanning tunneling microscopy (STM), and ultraviolet photoelectron spectroscopy (UPS). However, since two-dimensional materials are unstable in air, the test results obtained when actually testing two-dimensional material heterojunctions may not be accurate enough.

[0003] Therefore, traditional technologies have the problem of inaccurate band gap testing of two-dimensional material heterojunctions. Summary of the invention

[0004] Based on this, it is necessary to provide a band gap testing method, device, computer equipment, computer readable storage medium and computer program product for semiconductor heterostructures that can improve the accuracy of band gap testing of two-dimensional material heterojunctions in response to the above technical problems.

[0005] A bandgap testing method for a semiconductor heterostructure, the method comprising:

[0006] Scanning the first semiconductor material sample using a visible light spectrophotometer within a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material, and an aluminum oxide backplane;

[0007] A semiconductor heterostructure is scanned by a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials;

[0008] Determine the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and determine the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure;

[0009] A band gap test result for the semiconductor heterostructure is obtained based on the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0010] In one embodiment, the first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0011] In one embodiment, the method further includes: using the aluminum oxide back plate as a substrate, and performing a baseline scan on the aluminum oxide back plate using a reflection mode of a visible light spectrophotometer within a preset wavelength range.

[0012] In one of the embodiments, the light transmittance of the transparent double-sided tape meets the preset light transmittance requirement; the transparent double-sided tape contains one or more of polymethacrylate, polyurethane glue, silicone rubber, chloroprene rubber, and polyvinyl acetate glue.

[0013] In one embodiment, a method for preparing a first semiconductor material sample includes:

[0014] Using Scotch tape to adhere the first semiconductor material to form a first structure; the first structure includes the first semiconductor material and the Scotch tape in sequence;

[0015] The first structure is attached to a side of a transparent double-sided tape without a diaphragm, and the first structure and the transparent double-sided tape are compacted by applying an external force, and then the Scotch tape is removed to form a second structure; the second structure sequentially includes the diaphragm of the transparent double-sided tape, the transparent double-sided tape, and the first semiconductor material;

[0016] The second structure is attached to the alumina back plate, and the diaphragm of the second structure is removed to form a first semiconductor material sample.

[0017] In one embodiment, a method for preparing a semiconductor heterostructure includes:

[0018] removing the transparent double-sided adhesive tape attached with the first semiconductor material in the first semiconductor material sample from the alumina backing plate;

[0019] Placing a transparent double-sided tape with a diaphragm on the alumina back plate, and removing the diaphragm to form a fourth structure; the fourth structure sequentially comprises the transparent double-sided tape and the alumina back plate;

[0020] Adhere the second semiconductor material with Scotch tape to form a fifth structure; the fifth structure includes the second semiconductor material and the Scotch tape in sequence;

[0021] Placing the fifth structure on the transparent double-sided tape of the fourth structure, and pressing the fifth structure and the fourth structure by applying external force, and then removing the Scotch tape to form a sixth structure; the sixth structure sequentially includes the second semiconductor material, the transparent double-sided tape and the aluminum oxide backplane;

[0022] A transparent double-sided tape with the first semiconductor material attached thereto is placed on the sixth structure to form a semiconductor heterostructure.

[0023] A bandgap testing device for a semiconductor heterostructure, comprising:

[0024] A first measurement module is used to scan the first semiconductor material sample using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane;

[0025] The second measurement module is used to scan the semiconductor heterostructure using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials;

[0026] A determination module, configured to determine the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and to determine the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure;

[0027] The acquisition module is used to obtain a band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0028] A computer device includes a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0029] A computer-readable storage medium stores a computer program, which implements the steps of the above method when executed by a processor.

[0030] A computer program product comprises a computer program, and when the computer program is executed by a processor, the steps of the above method are implemented.

[0031] The bandgap testing method, device, computer equipment, storage medium and computer program product of the semiconductor heterostructure are characterized in that a first semiconductor material sample is scanned by a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample comprises a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane in sequence; the semiconductor heterostructure is scanned by a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure comprises a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material is a different semiconductor material from the first semiconductor material; according to the first semiconductor material The diffuse reflection spectrum corresponding to the bulk material sample is used to determine the band gap information of the first semiconductor material sample, and the band gap information of the semiconductor heterostructure is determined according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure; the band gap test result for the semiconductor heterostructure is obtained according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure; in this way, the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure can be accurately obtained, and based on the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure, it can be accurately determined whether the band gap of the first semiconductor material has changed after forming the semiconductor heterostructure with the second semiconductor material, which can improve the accuracy of the band gap test of the two-dimensional material heterojunction. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] FIG1 is an application environment diagram of a bandgap testing method for a semiconductor heterostructure in one embodiment;

[0033] FIG2 is a schematic flow diagram of a bandgap testing method for a semiconductor heterostructure according to an embodiment;

[0034] Figure 3 A schematic diagram of the structure of a semiconductor heterostructure and a first semiconductor material sample in one embodiment;

[0035] Figure 4 A schematic diagram of a test structure of an adhesive tape in an embodiment;

[0036] Figure 5 A schematic diagram of a preparation process of an indium selenide sample in an embodiment;

[0037] Figure 6 A schematic diagram of a preparation process of a semiconductor heterostructure in one embodiment;

[0038] Figure 7 A schematic diagram of preparing an indium selenide sample using a 0.05 mm transparent double-sided tape in one embodiment;

[0039] Figure 8 is a schematic diagram of diffuse reflection curves of a first semiconductor material sample and a seventh structure in one embodiment;

[0040] Fig. 9 A schematic diagram of preparing an indium selenide sample using a 0.1 mm transparent double-sided tape in one embodiment;

[0041] Fig.10 is a schematic diagram of diffuse reflection curves of a first semiconductor material sample and a seventh structure in one embodiment;

[0042] Fig.11 A schematic diagram of preparing an indium selenide sample using a 0.2 mm transparent double-sided tape in one embodiment;

[0043] Fig.12 A schematic diagram of diffuse reflection curves of a third semiconductor material sample and a seventh structure in one embodiment;

[0044] Fig.13 A structural block diagram of a bandgap testing device for a semiconductor heterostructure in one embodiment;

[0045] FIG. 14 is a diagram showing the internal structure of a computer device in one embodiment.

[0046] The reference numerals and their meanings are as follows:

[0047] 102. Computer equipment; 301. First semiconductor material sample; 302. Semiconductor heterostructure; 501. First structure; 502. Second structure; 601. Fourth structure; 602. Fifth structure; 603. Sixth structure; 701. Seventh structure; 1101. Third semiconductor material sample. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0049] It should be noted that the terms "first", "second", etc. in the specification and claims of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present disclosure described herein can be implemented in an order other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure.

[0050] The bandgap testing method of the semiconductor heterostructure provided in the embodiment of the present application can be applied to the computer device shown in FIG. 1 .

[0051] In an exemplary embodiment, as shown in FIG. 2 , a bandgap testing method for a semiconductor heterostructure is provided, which is described by taking the method applied to the computer device 102 in FIG. 1 as an example, and includes the following steps:

[0052] Step S202, scanning the first semiconductor material sample using a visible light spectrophotometer within a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane.

[0053] The visible light spectrophotometer with a preset wavelength range may be an ultraviolet-visible-near-infrared spectrophotometer or an ultraviolet-visible spectrophotometer.

[0054] The transparent double-sided tape does not affect the band gap test of the first semiconductor material and does not affect the second semiconductor material, and the thickness of the transparent double-sided tape can be 0.05 mm, 0.1 mm or 0.2 mm.

[0055] The first semiconductor material may be a two-dimensional material, a quantum dot material, or a semiconductor material with other properties.

[0056] Among them, the alumina back plate is used as the base plate.

[0057] Optionally, a visible light spectrophotometer within a preset wavelength range is used to scan the first semiconductor material sample, so that the computer device acquires a diffuse reflectance spectrum corresponding to the first semiconductor material sample.

[0058] Step S204, using a visible light spectrophotometer with a preset wavelength range to scan the semiconductor heterostructure to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials.

[0059] The first semiconductor material and the second semiconductor material may be two-dimensional materials, quantum dot materials, or semiconductor materials of other properties. However, in each embodiment of the present application, the first semiconductor material and the second semiconductor material are different semiconductor materials.

[0060] The first semiconductor material sample can be found at Figure 3 301 in Semiconductor Heterostructures can be found in Figure 3 302 in the.

[0061] Optionally, a visible light spectrophotometer within a preset wavelength range is used to scan the semiconductor heterostructure, so that the computer device acquires a diffuse reflectance spectrum corresponding to the semiconductor heterostructure.

[0062] Step S206, determining the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and determining the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure.

[0063] The band gap information of the first semiconductor material sample may refer to the energy difference between the conduction band and the valence band in the energy band structure of the first semiconductor material sample.

[0064] The band gap information of the semiconductor heterostructure may refer to the energy difference between the conduction band and the valence band in the energy band structure of the semiconductor heterostructure.

[0065] In a specific implementation, the computer device determines the band gap of the first semiconductor material sample based on the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and determines the band gap of the semiconductor heterostructure based on the diffuse reflectance spectrum corresponding to the semiconductor heterostructure.

[0066] Step S208, obtaining a band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0067] The band gap test result may be a representation of whether the band gap of the first semiconductor material changes after the first semiconductor material and the second semiconductor material form a heterostructure.

[0068] In a specific implementation, the computer device obtains a band gap test result for the semiconductor heterostructure based on the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0069] In the bandgap test method of the semiconductor heterostructure, a first semiconductor material sample is scanned by using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample includes a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane in sequence; the semiconductor heterostructure is scanned by using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials; according to the diffuse reflection spectrum corresponding to the first semiconductor material sample The method comprises the following steps: determining the band gap information of the first semiconductor material sample according to the diffuse reflection spectrum, and determining the band gap information of the semiconductor heterostructure according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure; obtaining the band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure; in this way, the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure can be accurately obtained, and based on the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure, it can be accurately determined whether the band gap of the first semiconductor material changes after forming the semiconductor heterostructure with the second semiconductor material, thereby improving the band gap test accuracy of the two-dimensional material heterojunction.

[0070] The new structure proposed in this application can infer the band gap of the two-dimensional material heterojunction by testing the UV-visible-near-infrared diffuse reflectance spectrum, which is helpful for material performance evaluation, material design and optimization, new material discovery and application exploration.

[0071] In an exemplary embodiment, the first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0072] InSe and GeAs are both two-dimensional layered semiconductor materials. Therefore, the semiconductor heterostructure in this embodiment is a heterojunction formed based on two two-dimensional layered semiconductor materials. Figure 3 A semiconductor heterostructure 302 is shown.

[0073] In this embodiment, by testing the band gap of indium selenide and the band gap of a semiconductor heterostructure formed based on indium selenide and germanium arsenide, it can be determined that the band gap of indium selenide changes after the semiconductor heterojunction is formed.

[0074] In an exemplary embodiment, the method further includes: using the aluminum oxide back plate as a substrate, and performing a baseline scan on the aluminum oxide back plate using a reflection mode of a visible light spectrophotometer in a preset wavelength range.

[0075] Among them, the alumina back plate is a single piece and does not need to be obtained by extrusion.

[0076] In the diffuse reflectance spectrum test, a completely white backplane that does not absorb light and can fully reflect light is ideal. A white backplane can minimize the absorption of light, so that more reflected light comes from the sample, thereby more accurately reflecting the diffuse reflectance characteristics of the sample. Since BaSO4 has strong light reflection, the backplane is often extruded from powdered BaSO4. However, compared with the alumina backplane, the alumina backplane is a block and does not need to be extruded, making it more convenient to use. However, the light reflection of the alumina backplane is not as strong as that of the BaSO4 backplane, so it is necessary to scan the alumina backplane as a baseline before testing. By scanning the substrate as a baseline, the light absorption and reflection characteristics of the alumina backplane itself can be obtained. Then, when testing the sample, the sample is placed on the alumina backplane and the test result is subtracted from the baseline value (the scanning baseline instrument will be saved, and the baseline will be automatically deducted after the test). This can correct the error caused by the absorption of the alumina backplane to a certain extent, thereby obtaining a result closer to the true diffuse reflectance spectrum of the sample.

[0077] In an exemplary embodiment, the light transmittance of the transparent double-sided tape meets the preset light transmittance requirement; the transparent double-sided tape contains one or more of polymethacrylate, polyurethane adhesive, silicone rubber, chloroprene rubber, and polyvinyl acetate adhesive.

[0078] The two layers of transparent double-sided tape in the semiconductor heterostructure in each embodiment of the present application may be transparent double-sided tapes with different properties.

[0079] Figure 3 The adhesive tape A in the semiconductor heterostructure 302 shown contains a mixture of one or more common adhesive components such as polymethacrylate, polyurethane glue, silicone rubber, chloroprene rubber, polyvinyl acetate glue, etc., and requires high transmittance. When the semiconductor band gap is Eg (eV), the transmittance of the adhesive tape A to the wavelength 1240 / Eg (nm) is preferably greater than 80%. After many experiments, it was found that the common adhesive tapes on the market are suitable for band gap testing of most semiconductor materials. The test results can be seen in Figure 4 .

[0080] Figure 3 The adhesive tape B in the semiconductor heterostructure 302 shown contains a mixture of one or more common adhesive components such as polymethacrylate, polyurethane glue, silicone rubber, chloroprene rubber, polyvinyl acetate glue, etc., and is preferably white or highly transparent.

[0081] In this embodiment, the semiconductor material is covered by transparent double-sided tape to isolate the air, thereby improving the stability of the semiconductor material, which is helpful for studying unstable materials in the air, such as two-dimensional materials, quantum dot materials, etc.

[0082] In an exemplary embodiment, a method for preparing a first semiconductor material sample includes: using Scotch tape to adhere the first semiconductor material to form a first structure; the first structure sequentially includes the first semiconductor material and the Scotch tape; attaching the first structure to a side of a transparent double-sided tape that does not have a diaphragm, and compacting the first structure and the transparent double-sided tape by applying an external force and then removing the Scotch tape to form a second structure; the second structure sequentially includes a diaphragm of the transparent double-sided tape, the transparent double-sided tape, and the first semiconductor material; attaching the second structure to an alumina back plate, and removing the diaphragm of the second structure to form a first semiconductor material sample.

[0083] Taking indium selenide InSe as the first semiconductor material as an example, this embodiment describes in detail the preparation process of the first semiconductor material sample:

[0084] Step 1: Use a piece of Scotch tape to stick an appropriate amount of InSe blocks and fold them in half repeatedly to obtain the following: Figure 5 The first structure 501 shown includes InSe and Scotch tape in sequence;

[0085] Step 2: Attach the first structure 501 to the side of the transparent double-sided tape without the diaphragm, apply external force, and tear off the Scotch tape after compaction to obtain the following: Figure 5 The second structure 502 shown includes a diaphragm, a transparent double-sided tape and InSe in sequence;

[0086] Step 3: Attach the second structure 502 to the alumina back plate and remove the diaphragm to obtain Figure 5 The first semiconductor material sample 301 shown includes a transparent double-sided tape, InSe and an aluminum oxide backplane in sequence.

[0087] By using the method for preparing a semiconductor material sample of this embodiment, a semiconductor material sample that meets the standards can be prepared, which can facilitate accurate testing of the band gap of the semiconductor material sample.

[0088] In an exemplary embodiment, a method for preparing a semiconductor heterostructure includes: removing a transparent double-sided tape attached to a first semiconductor material in a first semiconductor material sample from an alumina backplane; placing a transparent double-sided tape with a diaphragm on the alumina backplane, and removing the diaphragm to form a fourth structure; the fourth structure includes the transparent double-sided tape and the alumina backplane in sequence; using Scotch tape to adhere the second semiconductor material to form a fifth structure; the fifth structure includes the second semiconductor material and the Scotch tape in sequence; placing the fifth structure on the transparent double-sided tape of the fourth structure, and compacting the fifth structure with the fourth structure by applying an external force and then removing the Scotch tape to form a sixth structure; the sixth structure includes the second semiconductor material, the transparent double-sided tape and the alumina backplane in sequence; placing the transparent double-sided tape attached to the first semiconductor material on the sixth structure to form a semiconductor heterostructure.

[0089] The following uses indium selenide InSe as the first semiconductor material and germanium arsenide GeAs as the second semiconductor material as an example to describe in detail the preparation process of the semiconductor heterostructure:

[0090] Step 1: Figure 6 In the first semiconductor material sample 301 (comprising a transparent double-sided tape, InSe and an alumina back plate in sequence), the transparent double-sided tape with InSe adhered thereto is torn off from the alumina back plate;

[0091] Step 2: Stick a piece of transparent double-sided tape with a diaphragm on the alumina backing plate, and then tear off the diaphragm to form a Figure 6 The fourth structure 601 shown includes a transparent double-sided tape and an aluminum oxide back plate in sequence;

[0092] Step 3: Use a piece of Scotch tape to adhere an appropriate amount of GeAs blocks to form Figure 6 The fifth structure 602 shown includes a GeAs bulk and a Scotch tape in sequence;

[0093] Step 4: Figure 6 The fifth structure 602 is shown in FIG. Figure 6 The transparent double-sided tape of the fourth structure 601 is placed on the fifth structure 602, and the Scotch tape is removed after the fifth structure 602 and the fourth structure 601 are compacted by applying external force, so as to form a structure as shown in FIG. Figure 6 The sixth structure 603 shown includes GeAs, a transparent double-sided tape and an alumina backplane in sequence;

[0094] Step 6: The InSe side of the transparent double-sided tape with InSe adhered thereto, which is torn off from the alumina back plate in step 1, is attached to the sixth structure 603 to form a Figure 6The semiconductor heterostructure 302 shown includes a transparent double-sided tape, InSe, GeAs, a transparent double-sided tape and an aluminum oxide backplane in sequence.

[0095] Through the method for preparing a semiconductor heterostructure of this embodiment, a semiconductor heterostructure that meets the standards can be prepared, which can be helpful for accurately testing the band gap of the semiconductor heterostructure.

[0096] It should be noted that before implementing the technical solutions of each embodiment of the present application, multiple tests are required to verify the feasibility of the technical solution of the present application and the reliability of the bandgap test structure obtained by implementing the technical solution of the present application. The following provides test solutions for three embodiments, which respectively verify whether the transparent double-sided tape covering the surface of the semiconductor material with 0.05 mm will affect the test of the bandgap of the semiconductor material sheet, whether the transparent double-sided tape covering the surface of the semiconductor material with 0.1 mm will affect the test of the bandgap of the semiconductor material sheet, and whether the transparent double-sided tape covering the surface of the semiconductor material with 0.2 mm will affect the test of the bandgap of the semiconductor material sheet.

[0097] The first embodiment is used to verify whether covering the surface of the semiconductor material with a transparent double-sided tape 1 of 0.05 mm will affect the test of the band gap of the semiconductor material sheet. The semiconductor material InSe is used as an example for explanation. The steps specifically include:

[0098] Step 1: Using an alumina backing plate as the substrate, perform a baseline scan (reflection mode) using a UV-Vis-NIR spectrophotometer.

[0099] Step 2: Use a piece of Scotch tape to adhere an appropriate amount of InSe blocks and fold them repeatedly to form a Figure 7 The first structure 501 is shown;

[0100] Step 3: Figure 7 The first structure 501 shown is attached to a transparent double-sided tape 1 with a thickness of 0.05 mm and a diaphragm on the other side. After external force compaction, the Scotch tape is torn off to obtain the following Figure 7 The second structure 502 is shown;

[0101] Step 4: Figure 7 The second structure 502 shown is attached to the alumina backing plate in step 1, and the diaphragm is torn off to obtain Figure 7 The first semiconductor material sample 301 is shown, and a diffuse reflection curve is tested on the first semiconductor material sample 301;

[0102] Step 4: Figure 7 In the first semiconductor material sample 301 shown in FIG. 1 , the transparent double-sided adhesive tape 1 with InSe adhered thereto is torn off from the alumina backing, turned over and pasted on the alumina backing to form a Figure 7 The seventh structure 701 is shown, and a diffuse reflection curve is tested for the seventh structure 701;

[0103] Step 5: Compare Figure 7 The diffuse reflection curves of the first semiconductor material sample 301 and the seventh structure 701 are measured, as shown in FIG. Figure 8 As shown, the band gap of InSe is calculated using the Tauc formula and compared, and the following conclusions are obtained:

[0104] Conclusion 1: The diffuse reflectance spectrum of transparent double-sided tape 1 is generally greater than 95% in the range of 400 ~ 1400 nm, indicating that its absorption is very weak. It can be inferred that it has little effect on the absorption of semiconductors in this wavelength range.

[0105] Conclusion 2: Comparison Figure 7 From the diffuse reflectance curves measured for the first semiconductor material sample 301 and the seventh structure 701, it can be seen that there is little difference, the wavelength position of the absorption edge is consistent, and the calculated band gaps are basically the same (InSe@tape 1: 2.348 eV; tape 1@InSe: 2.352 eV), which is consistent with the literature. This shows that covering the surface of the InSe nanosheet with transparent tape 1 does not affect the test of the band gap of the InSe sheet.

[0106] The second embodiment is used to verify whether covering the surface of the semiconductor material with a transparent double-sided tape 2 of 0.1 mm will affect the test of the band gap of the semiconductor material sheet. The semiconductor material InSe is used as an example for explanation. The steps specifically include:

[0107] Step 1: Using an alumina backing plate as the substrate, perform a baseline scan (reflection mode) using a UV-Vis-NIR spectrophotometer.

[0108] Step 2: Use a piece of Scotch tape to adhere an appropriate amount of InSe blocks and fold them repeatedly to form a Fig. 9 The first structure 501 is shown;

[0109] Step 3: Fig. 9 The first structure 501 shown is attached to a transparent double-sided tape 2 with a thickness of 0.1 mm and a diaphragm on the other side. After external force compaction, the Scotch tape is torn off to obtain the following Fig. 9 The second structure 502 is shown;

[0110] Step 3: Fig. 9 The second structure 502 shown is attached to the alumina backing plate in step 1, and the diaphragm is torn off to obtain Fig. 9 The first semiconductor material sample 301 is shown, and a diffuse reflection curve is tested on the first semiconductor material sample 301;

[0111] Step 4: Tear off the transparent double-sided tape 2 with InSe adhered to the first semiconductor material sample 301 from the alumina backing, turn it over and stick it on the alumina backing to form a Fig. 9 The seventh structure 701 is shown, and a diffuse reflection curve is tested for the seventh structure 701;

[0112] Step 5: Compare the diffuse reflection curves measured for the first semiconductor material sample 301 and the seventh structure 701, such as Fig.10 As shown, by comparing the diffuse reflectance spectra measured above, using the Tauc formula to deduce the band gap of InSe and comparing them, the following conclusions are obtained:

[0113] Conclusion 3: The diffuse reflectance spectrum of transparent double-sided tape 2 is generally greater than 95% in the range of 410 ~ 1400 nm, indicating that its absorption is very weak. Therefore, it can be inferred that its effect on the absorption of semiconductors in this wavelength range is very small.

[0114] Conclusion 4: Comparison Fig. 9 From the diffuse reflectance spectra of the first semiconductor material sample 301 and the seventh structure 701, it can be seen that there is little difference, the absorption edges basically overlap, and the calculated band gaps are basically the same (InSe@tape 1: 2.305 eV; tape 1@InSe: 2.337 eV), which is consistent with the literature. This shows that covering the surface of the InSe nanosheet with transparent tape 2 basically does not affect the test of the band gap of the InSe sheet.

[0115] The third embodiment is used to verify whether covering the surface of the semiconductor material with a transparent double-sided tape of 0.2 mm will affect the test of the band gap of the semiconductor material sheet. The semiconductor material Sb2Se3 is used as an example for explanation. The steps specifically include:

[0116] Step 1: Using an alumina backing plate as the substrate, perform a baseline scan (reflection mode) using a UV-Vis-NIR spectrophotometer.

[0117] Step 2. Use a piece of transparent double-sided tape 3 with a thickness of 0.2 mm and a diaphragm on the other side to adhere Sb2Se3 powder to form Fig.11 The second structure 502 is shown;

[0118] Step 3: Fig.11 The second structure 502 shown is attached to the alumina back plate, and the diaphragm of the transparent double-sided tape 3 is torn off to form a Fig.11 The third semiconductor material sample 1101 is shown, and a diffuse reflection curve is tested on the third semiconductor material sample 1101;

[0119] Step 4: Fig.11The transparent double-sided tape 3 with Sb2Se3 powder adhered to the third semiconductor material sample 1101 is torn off from the alumina backing, turned over and pasted on the backing to form the seventh structure 701, and the diffuse reflection curve of the seventh structure 701 is tested;

[0120] Step 5: Compare Fig.11 The diffuse reflectance spectra of the third semiconductor material sample and the seventh structure are shown in Fig.12 As shown, the band gap of Sb2Se3 powder is calculated by Tauc formula and compared, and the following conclusions are obtained:

[0121] Conclusion 5: The diffuse reflectance spectrum of transparent double-sided tape 3 is generally greater than 95% in the range of 411 to 1400 nm, indicating that its absorption is very weak. It can be inferred that its effect on the absorption of semiconductors in this wavelength range is very small.

[0122] Conclusion 6: Comparing the diffuse reflectance spectra of the third semiconductor material sample 1101 and the seventh structure 701, it can be seen that the difference is very small, the absorption edges basically overlap, and the calculated band gaps are basically the same (Sb2Se3@tape 1: 1.079 eV; tape 1@Sb2Se3: 1.088 eV), which is consistent with the literature. This shows that covering the Sb2Se3 surface with transparent tape 3 basically does not affect the test of the Sb2Se3 powder band gap.

[0123] It should be understood that, although the various steps in the flowcharts involved in the above-mentioned embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps does not have a strict order restriction, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above-mentioned embodiments can include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0124] Based on the same inventive concept, the embodiment of the present application also provides a semiconductor heterostructure bandgap testing device for implementing the above-mentioned semiconductor heterostructure bandgap testing method. The implementation solution provided by the device is similar to the implementation solution recorded in the above-mentioned method, so the specific limitations in the embodiments of the bandgap testing device for one or more semiconductor heterostructures provided below can refer to the limitations of the semiconductor heterostructure bandgap testing method above, and will not be repeated here.

[0125] In one embodiment, Fig.13As shown, a bandgap testing device for a semiconductor heterostructure is provided, comprising:

[0126] The first measurement module 1302 is used to scan the first semiconductor material sample using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane;

[0127] The second measurement module 1304 is used to scan the semiconductor heterostructure using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials;

[0128] A determination module 1306 is used to determine the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and to determine the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure;

[0129] The acquisition module 1308 is used to obtain a band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0130] In one embodiment, the first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0131] In one embodiment, the device further comprises: a scanning module for using the aluminum oxide backplane as a substrate and performing a baseline scan on the aluminum oxide backplane using a reflection mode of a visible light spectrophotometer in a preset wavelength range.

[0132] In one of the embodiments, the light transmittance of the transparent double-sided tape meets the preset light transmittance requirement; the transparent double-sided tape contains one or more of polymethacrylate, polyurethane glue, silicone rubber, chloroprene rubber, and polyvinyl acetate glue.

[0133] In one embodiment, the device also includes: a semiconductor material sample preparation module, which is used to adhere the first semiconductor material with Scotch tape to form a first structure; the first structure includes the first semiconductor material and the Scotch tape in sequence; the first structure is attached to the side of the transparent double-sided tape that does not have a diaphragm, and the first structure and the transparent double-sided tape are compacted by applying external force and then the Scotch tape is removed to form a second structure; the second structure includes the diaphragm of the transparent double-sided tape, the transparent double-sided tape and the first semiconductor material in sequence; the second structure is attached to an alumina back plate, and the diaphragm of the second structure is removed to form a first semiconductor material sample.

[0134] In one embodiment, the device also includes: a heterostructure preparation module, which is used to remove the transparent double-sided tape attached to the first semiconductor material in the first semiconductor material sample from the alumina backplane; place the transparent double-sided tape with a diaphragm on the alumina backplane, and remove the diaphragm to form a fourth structure; the fourth structure includes the transparent double-sided tape and the alumina backplane in sequence; use Scotch tape to adhere the second semiconductor material to form a fifth structure; the fifth structure includes the second semiconductor material and Scotch tape in sequence; place the fifth structure on the transparent double-sided tape of the fourth structure, and press the fifth structure and the fourth structure by applying external force and then remove the Scotch tape to form a sixth structure; the sixth structure includes the second semiconductor material, the transparent double-sided tape and the alumina backplane in sequence; place the transparent double-sided tape attached to the first semiconductor material on the sixth structure to form a semiconductor heterostructure.

[0135] Each module in the bandgap test device for semiconductor heterostructures can be implemented in whole or in part by software, hardware, or a combination thereof. Each module can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to each module.

[0136] In one embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as shown in FIG14. The computer device includes a processor, a memory, and a network interface connected via a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store bandgap test data of semiconductor heterostructures. The network interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, a bandgap test method for a semiconductor heterostructure is implemented.

[0137] Those skilled in the art will understand that the structure shown in FIG. 14 is merely a block diagram of a partial structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different arrangement of components.

[0138] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of the bandgap testing method for a semiconductor heterostructure described above. The steps of the bandgap testing method for a semiconductor heterostructure described here may be the steps of the bandgap testing method for a semiconductor heterostructure described in each of the above embodiments.

[0139] In one embodiment, a computer-readable storage medium is provided, which stores a computer program. When the computer program is executed by a processor, the processor executes the steps of the bandgap testing method for a semiconductor heterostructure. The steps of the bandgap testing method for a semiconductor heterostructure here may be the steps of the bandgap testing method for a semiconductor heterostructure in each of the above embodiments.

[0140] In one embodiment, a computer program product is provided, including a computer program, and when the computer program is executed by a processor, the processor executes the steps of the bandgap testing method of a semiconductor heterostructure described above. The steps of the bandgap testing method of a semiconductor heterostructure here may be the steps of the bandgap testing method of a semiconductor heterostructure described in each of the above embodiments.

[0141] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties.

[0142] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but are not limited to this.

[0143] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0144] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A bandgap testing method for semiconductor heterostructures, characterized in that: The method comprises: Scanning the first semiconductor material sample using a visible light spectrophotometer within a preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material, and an aluminum oxide backplane; The semiconductor heterostructure is scanned by using a visible light spectrophotometer in the preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure comprises a transparent double-sided tape, the first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane in sequence; the second semiconductor material and the first semiconductor material are different semiconductor materials; Determining the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and determining the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure; A band gap test result for the semiconductor heterostructure is obtained according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

2. The method according to claim 1, characterized in that The first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on the indium selenide and the germanium arsenide.

3. The method according to claim 1, characterized in that The method further comprises: The aluminum oxide back plate is used as a substrate, and a baseline scan is performed on the aluminum oxide back plate using a reflection mode of a visible light spectrophotometer within the preset wavelength range.

4. The method according to claim 1, characterized in that: The light transmittance of the transparent double-sided tape meets the preset light transmittance requirement; the transparent double-sided tape contains one or more of polymethacrylate, polyurethane glue, silicone rubber, chloroprene rubber, and polyvinyl acetate glue.

5. A method for preparing a first semiconductor material sample according to any one of claims 1 to 4, characterized in that: include: Adhere the first semiconductor material with Scotch tape to form a first structure; the first structure includes the first semiconductor material and the Scotch tape in sequence; The first structure is attached to the side of the transparent double-sided tape without the diaphragm, and the first structure and the transparent double-sided tape are pressed together by applying an external force, and then the Scotch tape is removed to form a second structure; the second structure sequentially includes the diaphragm of the transparent double-sided tape, the transparent double-sided tape and the first semiconductor material; The second structure is attached to the alumina back plate, and the diaphragm of the second structure is removed to form the first semiconductor material sample.

6. A method for preparing a semiconductor heterostructure according to any one of claims 1 to 4, characterized in that: include: removing the transparent double-sided tape attached with the first semiconductor material in the first semiconductor material sample from the alumina back plate; Placing the transparent double-sided tape with the diaphragm on the alumina back plate, and removing the diaphragm to form a fourth structure; the fourth structure sequentially comprises the transparent double-sided tape and the alumina back plate; Adhere the second semiconductor material with Scotch tape to form a fifth structure; the fifth structure includes the second semiconductor material and the Scotch tape in sequence; Placing the fifth structure on the transparent double-sided tape of the fourth structure, and pressing the fifth structure and the fourth structure together by applying external force, and then removing the Scotch tape to form a sixth structure; the sixth structure sequentially comprises the second semiconductor material, the transparent double-sided tape and the alumina backplane; The transparent double-sided tape with the first semiconductor material attached thereto is placed on the sixth structure to form the semiconductor heterostructure.

7. A bandgap testing device for a semiconductor heterostructure, characterized in that: The device comprises: A first measurement module is used to scan a first semiconductor material sample using a visible light spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided tape, a first semiconductor material and an aluminum oxide backplane; a second measuring module, configured to scan the semiconductor heterostructure using a visible light spectrophotometer within the preset wavelength range to obtain a diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure sequentially comprises a transparent double-sided tape, the first semiconductor material, a second semiconductor material, a transparent double-sided tape and an aluminum oxide backplane; the second semiconductor material and the first semiconductor material are different semiconductor materials; a determination module, configured to determine the band gap information of the first semiconductor material sample according to the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and to determine the band gap information of the semiconductor heterostructure according to the diffuse reflectance spectrum corresponding to the semiconductor heterostructure; The acquisition module is used to obtain a band gap test result for the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 4 are implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 4 are implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 4 are implemented.

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