Optical device adaptive to high power and method

Abstract

The invention provides an optical device and method adaptive to high power, and the device comprises an optical fiber array and a planar optical waveguide chip which are provided with a matched gap. A gap between the optical fiber array and the planar optical waveguide chip meets a certain threshold value, so that a high-power laser beam passes through a laser spot of the optical fiber array and is located in an incident channel of the planar optical waveguide chip; a connecting layer is arranged on the outer edge part of the plane where the optical fiber array is matched with the planar optical waveguide chip, and part of the connecting layer is located in the gap and far away from the area where the laser beam passes; a gap is controlled, so that a high-power laser beam penetrates through a laser spot of the optical fiber array to be located in an incident channel of the planar optical waveguide chip, and the coupling efficiency is high; the manufacturing process cost of a 1550nm laser radar is greatly reduced, and the laser transmission coupling efficiency is improved, so that the situation that the light emitting surface of the optical fiber array and the waveguide surface of the planar optical waveguide chip cannot meet the laser damage of a high-power pulse laser is prevented.

Description

Technical Field

[0001] The present invention relates to the field of optical fiber communication technology, and in particular to an optical device and method adapted to high power. Background Art

[0002] In the traditional fiber optic communication industry, planar optical waveguide chips and optical fiber arrays are usually fixed with ultraviolet curing glue (UV glue, such as AT6001, etc.) during the alignment process. After the planar optical waveguide chip and the optical fiber array are aligned, the waveguide light-emitting surface and the end face of the optical fiber array are glued. This method has been proven to be very stable and reliable in the optical fiber communication industry after more than 30 years of long-term verification. However, in the application of the optical fiber communication industry, this structure usually uses a low-power laser (mW level) as a signal light source to achieve the purpose of photoelectric conversion (TOSA / ROSA, etc.); for high-power lasers, such as high-power lasers with a wavelength of 1550nm, this gluing method will be difficult to apply; the traditional curing glue used on the light-emitting surface of the optical fiber array and the waveguide surface of the planar optical waveguide chip cannot meet the high temperature problem generated by the high-power pulse laser at this location.

[0003] In the existing lasers, there has never been a case of using high-power pulsed lasers (W level) for gluing. Therefore, how to solve the gluing coupling problem of high-power pulsed lasers has become a technical problem that technicians in this field need to solve. Summary of the invention

[0004] The present invention provides an optical device and method adapted to high power, so as to solve the alignment coupling problem of high power pulse laser which cannot be satisfied by the prior art.

[0005] An optical device adapted for high power comprises an optical fiber array and a planar optical waveguide chip, wherein the optical fiber array and the planar optical waveguide chip have a matching gap, and the gap between the optical fiber array and the planar optical waveguide chip meets a certain threshold so that the laser spot of a high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip; and a connection layer is arranged at the outer edge of the plane where the optical fiber array and the planar optical waveguide chip match.

[0006] Furthermore, part of the connection layer is located in the gap and away from the area through which the laser beam passes.

[0007] Furthermore, the gap between the optical fiber array and the planar optical waveguide chip satisfies a certain threshold value, which is determined by:

[0008]

[0009] In formula (1), ω 0 represents the fiber waist radius, n1 Represents the refractive index of the optical fiber, n 2 represents the refractive index of air, ω 1 Represents the waist radius ω of the laser beam of a high-power laser entering the air medium 1 , z 1 It represents the Rayleigh distance of the laser beam of a high-power laser entering the air medium, and λ represents the wavelength of the laser beam;

[0010]

[0011] In formula (2), n represents the number of channels of the planar optical waveguide chip, which is a positive integer; k represents the additional loss in the laser beam alignment process, in dB, k∈[0,1]; r represents the coupling waveguide radius of the planar optical waveguide chip 20; η represents the coupling efficiency; IL represents the overall insertion loss value of the optical device; ω 2 It represents the beam waist radius when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z 2 represents the Rayleigh distance when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; Based on formula (1) and formula (2), z is calculated 2 ;

[0012] The gap L between the optical fiber array and the planar optical waveguide chip satisfies L=z 2 .

[0013] Furthermore, the wavelength of the laser of the high-power optical device is 1550 nm.

[0014] In some other embodiments, the method further includes compensating a gap between the optical fiber array and the planar optical waveguide chip based on satisfying a certain threshold.

[0015] Further, the compensation is determined based on the shrinkage rate of the connecting layer during the curing process. Specifically,

[0016] The volume shrinkage of the connecting layer is T V The linear shrinkage rate M of the connecting layer along the direction of laser emission is L , then M L =T V / 3;

[0017] The total length of the connection layer set in the optical fiber array and the planar optical waveguide chip is l;

[0018] The gap contraction length Δl=l×M between the optical fiber array and the planar optical waveguide chip during the curing process of the connecting layer L ;

[0019] Then the gap length L between the optical fiber array and the planar optical waveguide chip is defined as L = z 2 +Δl.

[0020] Meanwhile, in the present invention, a method for forming an optical device adapted for high power is provided, comprising the following steps:

[0021] An optical fiber array and a planar optical waveguide chip are provided; the laser emitting surface of the optical fiber array is opposite to the laser incident surface of the planar optical waveguide chip and has a certain gap; the gap satisfies a certain threshold so that the laser spot of a high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip;

[0022] Controlling the gap between the laser emitting surface of the optical fiber array and the planar optical waveguide chip;

[0023] Disposing a connection layer at the outer edge of the gap;

[0024] The connecting layer is cured to form the optical device.

[0025] A portion of the connection layer is located in the gap and away from a region where the laser beam passes.

[0026] Further, the gap L is determined by:

[0027]

[0028] In formula (1), ω 0 represents the fiber waist radius, n 1 Represents the refractive index of the optical fiber, n 2 represents the refractive index of air, ω 1 Represents the waist radius ω of the laser beam of a high-power laser entering the air medium 1 , z 1 It represents the Rayleigh distance of the laser beam of a high-power laser entering the air medium, and λ represents the wavelength of the laser beam;

[0029]

[0030] In formula (2), n represents the number of channels of the planar optical waveguide chip, which is a positive integer; k is the additional loss in the laser beam alignment process, in dB, k∈[0,1]; r represents the coupling waveguide radius of the planar optical waveguide chip; η represents the coupling efficiency; IL represents the overall insertion loss value of the optical device; ω 2 It represents the beam waist radius when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z 2represents the Rayleigh distance when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; Based on formula (1) and formula (2), z is calculated 2 ;

[0031] The gap L between the optical fiber array and the planar optical waveguide chip satisfies L=z 2 .

[0032] In some other embodiments, the gap between the optical fiber array and the planar optical waveguide chip is compensated based on satisfying a certain threshold.

[0033] Furthermore, the compensation is determined based on the shrinkage rate of the connecting layer during the curing process. Specifically,

[0034] The volume shrinkage of the connecting layer is T V The linear shrinkage rate M of the connecting layer along the direction of laser emission is L , then M L =T V / 3;

[0035] The total length of the connection layer set in the optical fiber array and the planar optical waveguide chip is l;

[0036] The gap contraction length Δl=l×M between the optical fiber array and the planar optical waveguide chip during the curing process of the connecting layer L ;

[0037] Then the gap length L between the optical fiber array and the planar optical waveguide chip after compensation is defined as L=z 2 +Δl.

[0038] In the present invention, high power refers to an average power greater than or equal to 2W and a peak power of at least 2KW.

[0039] In the present invention, based on the optical fiber array and the planar optical waveguide chip in the scenario of a high-power laser, when the laser beam propagates in different media, the refractive index of the transmission medium changes, resulting in changes in the beam waist radius and Rayleigh distance of the laser spot. The present invention provides, through theoretical calculation, precise control of the gap between the two in the process of forming an optical device adapted to high power and its preparation process, so that the laser spot of the high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip and has a high coupling efficiency; based on this, the manufacturing process cost of a 1550nm laser radar is greatly reduced, the laser transmission coupling efficiency is improved, and an efficient coupling method is provided for high-order performance laser transmission to prevent the light-emitting surface of the optical fiber array and the waveguide surface of the planar optical waveguide chip from being unable to meet the laser damage of the high-power pulse laser, and the existing gluing method is changed to prevent damage to the glue layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0041] Figure 1 to Figure 3 A schematic diagram of an optical device adapted for high power provided by the present invention;

[0042] Figure 4 A schematic flow chart of a method for forming an optical device adapted for high power is provided for the present invention. DETAILED DESCRIPTION

[0043] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0044] When a high-power laser is transmitted in different transmission media, the waist radius and Rayleigh distance of the laser beam change due to the change in the refractive index of the transmission medium. Existing processes and optical fiber devices are difficult to meet the performance requirements under high-power laser transmission.

[0045] The present invention provides an optical device adapted to high power, comprising an optical fiber array and a planar optical waveguide chip, wherein the plane on which the optical fiber array and the planar optical waveguide chip cooperate is an inclined plane; the optical fiber array and the planar optical waveguide chip have a matching gap, and the gap between the optical fiber array and the planar optical waveguide chip meets a certain threshold so that a laser spot of a high-power laser beam passing through the optical fiber array is located within an incident channel of the planar optical waveguide chip; and a connection layer is arranged at the outer edge of the plane on which the optical fiber array and the planar optical waveguide chip cooperate.

[0046] A portion of the connection layer is located in the gap and away from a region where the laser beam passes.

[0047] The high power defined in the present application refers to an average power greater than or equal to 2 W and a peak power of at least 2 kW, for example, a laser with a wavelength of 1550 nm.

[0048] like Figure 1As shown, schematically, an optical device adapted for high power includes an optical fiber array 10 and a planar optical waveguide chip 20, the mating planes of the optical fiber array 10 and the planar optical waveguide chip 20 are inclined, and there is a mating gap between the two, and the length L of the gap meets a certain threshold, so that the laser spot of the high-power laser beam passing through the optical fiber array 10 is located in the incident channel of the planar optical waveguide chip. Figure 2 As shown, a connection layer 30 is also provided at the outer edge of the plane where the optical fiber array and the planar optical waveguide chip cooperate.

[0049] As shown in the figure, part of the connection layer 30 is located in the gap and away from the area where the laser beam passes, so as to prevent the high-power laser beam from passing through the connection layer and causing the connection layer to generate high temperature and affect the coupling efficiency.

[0050] Figures 1 to 3 The direction indicated by the arrow is the direction of laser beam propagation.

[0051] Furthermore, the length L of the gap between the optical fiber array 10 and the planar optical waveguide chip 20 meets a certain threshold value, so that the laser spot of the high-power laser beam meets the maximum coupling efficiency when coupled into the incident channel of the planar optical waveguide chip.

[0052] To further illustrate, in order to achieve the maximum coupling efficiency, the gap length L between the calculation optical fiber array 10 and the planar optical waveguide chip 20 in the present invention is achieved in the following manner, as shown below:

[0053] Assuming that the wavelength of a high-power laser beam is λ, the laser beam passes through a fiber transmission medium and enters the gap from the end face of the grating array. The gap is filled with air. Based on this, the mode field diameter d of the fiber and the fiber waist radius ω can be determined. 0 , the refractive index of the optical fiber n 1 , the refractive index of air is n 2 Since the laser Gaussian beam generated by a high-power laser enters the air from the optical fiber, after the refractive index changes, the beam waist radius ω of the Gaussian beam entering the air medium 1 Distance from Ruili 1 Therefore, the waist radius w can be determined according to the following formula (1): 1 Distance from Ruili 1 .

[0054]

[0055] In formula (1), the fiber waist radius ω 0 , the refractive index of the optical fiber n 1 , the refractive index of air is n 2 are all known, and can be obtained according to ω 0 、n1 、n 2 To determine ω 1 、z 1 .

[0056] Further, assuming that the planar optical waveguide chip 20 has n planar optical waveguide channels of 1×n, where n represents the number of channels of the planar optical waveguide chip and is a positive integer, the splitting ratio of each channel is Assume that the additional loss in the laser beam alignment process is k, in dB, k∈[0,1], which is determined based on different optical fiber communication requirements and loss requirements in the alignment process; the beam waist radius ω when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip 20 after passing through the air medium 2 Distance from Ruili 2 Calculated by the following formula (2):

[0057]

[0058] In formula (2), r represents the coupling waveguide radius of the planar optical waveguide chip 20, which can be determined based on the planar optical waveguide chip 20. η represents the coupling efficiency. IL represents the overall insertion loss value of the optical device.

[0059] Based on the ω determined in formula (1) 1 、z 1 , combined with formula (2), the beam waist radius ω when the laser beam reaches the optical waveguide channel interface of the planar optical waveguide chip 20 can be determined 2 Distance from Ruili 2 .

[0060] Furthermore, considering the position of the laser spot of the high-power laser during laser communication and the maximum coupling efficiency, the gap length L is limited to z 2 .

[0061] In one embodiment, such as the first embodiment, for example, assuming that the wavelength of a laser beam of a high-power laser is λ=1550nm, as an application of a high-power laser for a vehicle-mounted laser radar; when an optical fiber such as Corning's SMF series is selected, when the laser beam is emitted from the optical fiber array into the air medium, the mode field diameter of the optical fiber is d=10.4μm, and the optical fiber waist radius ω 0 =5.2μm, the refractive index of the optical fiber is n 1 =1.4679, the refractive index of air n 2 =1, then based on formula (1):

[0062]

[0063] Furthermore, assuming that the additional loss k in the laser beam alignment process is limited to 1 dB, the planar optical waveguide chip 20 has 4 planar optical waveguide channels of 1×4, and the splitting ratio of each channel is 25%. Based on the insertion loss value of 6.02 dB in optical fiber such as Corning's SMF series at 1550 nm, the overall insertion loss of the product IL=6.02+k=7.02 dB;

[0064] Based on formula (2), we can further know that Calculate η≥0.8;

[0065] Based on Calculate ω 2 2 =52.8125;

[0066] Combined with where ω 1 =3.542μm, z 1 =25.42μm; calculate z 2 =45.54μm. That is, when z 2 =45.54 μm, which can meet the situation that the overall insertion loss of the product IL=6.02+k=7.02 dB. Further, the gap length L between the optical fiber array 10 and the planar optical waveguide chip 20 is limited to 45.54 μm.

[0067] Of course, as an air medium, the high-power laser beam passes through the air medium to achieve a gap length that meets the coupling efficiency requirements, and the gap length L = 45.54 μm.

[0068] To further illustrate, in order to prevent the gap between the optical fiber array 10 and the planar optical waveguide chip 20 from being too small, resulting in the laser diffusion spot not being able to be fully incident on the optical waveguide channel of the planar optical waveguide chip 20, and to ensure the maximum coupling efficiency, it is necessary to limit L=z 2 .

[0069] In the present invention, when realizing the maximum coupling efficiency control of the optical fiber array 10 and the planar optical waveguide chip 20, the gap length between the two is limited to 45.54 μm to achieve the coupling efficiency required in the present invention. In the actual coupling alignment process, the coupling preparation distance between the optical fiber array 10 and the planar optical waveguide chip 20 is controlled based on the coupling gap.

[0070] In one embodiment, the calculated coupling gap critical value when the additional loss k=1 dB, ie, L=45.54 μm, is used to achieve laser beam coupling control of a high-power laser.

[0071] Of course, the present invention in the above embodiment only shows one of the calculation methods of the coupling gap distance when a high-power laser with a wavelength of 1550nm is coupled in an air medium, wherein the calculated gap length = 45.54μm is based on the assumption that the additional loss k in the laser beam alignment process is limited to 1dB. Based on different processes and requirements, the coupling gap length is calculated by selecting the size of the limited additional loss k. Based on the cognition of the present invention, it can be determined; of course, based on the difference in media, in some other media, based on the calculation ideas of the present invention, by formulas (1) and (2), the coupling spacing control of the optical fiber array 10 and the planar optical waveguide chip 20 during coupling can also be determined.

[0072] In some other embodiments of the present invention, based on the above embodiments, the gap length between the optical fiber array 10 and the planar optical waveguide chip 20 is further determined in combination with a specific optical fiber process; as mentioned above, in the optical device of the present invention, a connection layer is provided at the outer edge of the plane where the optical fiber array and the planar optical waveguide chip cooperate, and part of the connection layer is located in the gap and away from the area where the laser beam passes. The connection layer can be a UV curing adhesive layer.

[0073] Since the connecting layer (such as the UV-curing adhesive layer) has a certain shrinkage rate during the curing process, when the coupling gap critical value is determined by the method of the aforementioned embodiment, the curing gap may change due to the shrinkage of the connecting layer. Therefore, the present invention further proposes to compensate for the gap between the two. In this embodiment, in order to improve the shrinkage problem of the connecting layer, this embodiment 2 is provided on the basis of the aforementioned embodiment 1.

[0074] In more detail, as a form of gap length compensation, it is assumed that the volume shrinkage rate of a certain connecting layer is T V , based on the linear shrinkage rate M of the connecting layer along the direction of laser emission L , then M L =T V / 3; Based on the above embodiment, the shrinkage problem of the connection layer is further considered. Assuming that the total length of the connection layer set in the optical fiber array 10 and the planar optical waveguide chip 20 is l, the connection layer will shrink after curing, and the shrinkage will cause the gap between the optical fiber array 10 and the planar optical waveguide chip 20 to change, and the change value is the shrinkage length Δl=l×M L At this time, in order to accurately control the gap between the optical fiber array 10 and the planar optical waveguide chip 20 to prevent the laser diffusion spot from being unable to be fully incident on the optical waveguide channel of the planar optical waveguide chip 20 due to the gap being too small, the gap length L between the optical fiber array 10 and the planar optical waveguide chip 20 is limited to be calculated as 2 +Δl.

[0075] like Figure 3 As shown, the total length of the connecting layer on either side of the direction of laser beam propagation is l, and the connecting layer will shrink after curing, and the shrinkage length Δl=l×M L , shrinkage causes the gap between the optical fiber array 10 and the planar optical waveguide chip 20 to become smaller; in order to accurately control the gap length of the optical device after curing, the gap length L between the optical fiber array 10 and the planar optical waveguide chip 20 is limited to z 2 +Δl.

[0076] For example, if a common Take 4034W7 UV-thermosetting adhesive as an example. You can refer to its performance manual to determine the volume shrinkage rate T of this adhesive. V =1.5%, based on volume shrinkage T V The linear shrinkage M of the glue in the direction of laser beam propagation can be obtained L =T V / 3=1.5% / 3=0.5%. The total length of the connection layer set in the optical fiber array 10 and the planar optical waveguide chip 20 is limited to l=3mm, and after curing, the optical fiber array 10 and the planar optical waveguide chip 20 will shrink by Δl=l×M L =3mm×0.5%=15μm. On this basis, the gap length L between the optical fiber array 10 and the planar optical waveguide chip 20 is further defined as z 2 +Δl=45.54+15=60.54 μm. Then L at this time is the glue-dispensing coupling distance between the optical fiber array 10 and the planar optical waveguide chip 20 when setting the connection layer.

[0077] Of course, the above embodiment is only used as an example to show how to calculate the gap length compensation between the optical fiber array 10 and the planar optical waveguide chip 20 during curing. During the compensation, the shrinkage property of the connection layer is further considered to further compensate the gap length, so that the gap distance between the optical fiber array 10 and the planar optical waveguide chip 20 can be accurately controlled after the connection layer is cured. In this regard, compared with the method of embodiment 1, it has further accuracy.

[0078] Meanwhile, in the present invention, a method for forming an optical device adapted for high power is provided, comprising the following steps:

[0079] Provide optical fiber arrays and planar optical waveguide chips;

[0080] The laser emitting surface of the optical fiber array is opposite to the laser incident surface of the planar optical waveguide chip and has a certain gap therebetween;

[0081] The gap meets a certain threshold so that the laser spot of the high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip;

[0082] Controlling the gap between the laser emitting surface of the optical fiber array and the planar optical waveguide chip;

[0083] Disposing a connection layer at the outer edge of the gap;

[0084] The connecting layer is cured to form the optical device.

[0085] A portion of the connection layer is located in the gap and away from a region where the laser beam passes.

[0086] Further, the gap L is determined by:

[0087]

[0088] In formula (1), ω 0 represents the fiber waist radius, n 1 Represents the refractive index of the optical fiber, n 2 represents the refractive index of air, ω 1 Represents the waist radius ω of the laser beam of a high-power laser entering the air medium 1 , z 1 It indicates the Rayleigh distance of the laser beam of a high-power laser entering the air medium;

[0089]

[0090] In formula (2), n represents the number of channels of the planar optical waveguide chip, which is a positive integer; k represents the additional loss in the laser beam alignment process, in dB, k∈[0,1]; r represents the coupling waveguide radius of the planar optical waveguide chip 20; η represents the coupling efficiency; IL represents the overall insertion loss value of the optical device; ω 2 It represents the beam waist radius when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z 2 represents the Rayleigh distance when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; Based on formula (1) and formula (2), z is calculated 2 ;

[0091] The gap L between the optical fiber array and the planar optical waveguide chip satisfies L=z 2 .

[0092] In some other embodiments, the gap between the optical fiber array and the planar optical waveguide chip is compensated based on satisfying a certain threshold.

[0093] Furthermore, the compensation is determined based on the shrinkage rate of the connecting layer during the curing process. Specifically,

[0094] The volume shrinkage of the connecting layer is T V The linear shrinkage rate M of the connecting layer along the direction of laser emission is L , then M L =T V / 3;

[0095] The total length of the connection layer set in the optical fiber array and the planar optical waveguide chip is l;

[0096] The gap contraction length Δl=l×M between the optical fiber array and the planar optical waveguide chip during the curing process of the connecting layer L ;

[0097] Then the gap length L between the optical fiber array and the planar optical waveguide chip after compensation is defined as L=z 2 +Δl.

[0098] In the present invention, based on the optical fiber array and the planar optical waveguide chip in the scenario of a high-power laser, when the laser beam propagates in different media, the refractive index of the transmission medium changes, resulting in changes in the beam waist radius and Rayleigh distance of the laser spot. The present invention provides, through theoretical calculation, precise control of the gap between the two in the process of forming an optical device adapted to high power and its preparation process, so that the laser spot of the high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip and has a high coupling efficiency; based on this, the manufacturing process cost of a 1550nm laser radar is greatly reduced, the laser transmission coupling efficiency is improved, and an efficient coupling method is provided for high-order performance laser transmission to prevent the light-emitting surface of the optical fiber array and the waveguide surface of the planar optical waveguide chip from being unable to meet the laser damage of the high-power pulse laser, and the existing gluing method is changed to prevent damage to the glue layer.

[0099] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An optical device adapted for high power, comprising an optical fiber array and a planar optical waveguide chip, characterized in that: The optical fiber array and the planar optical waveguide chip have a matching gap, and the gap between the optical fiber array and the planar optical waveguide chip meets a certain threshold so that the laser spot of the high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip; and a connecting layer is arranged at the outer edge of the plane where the optical fiber array and the planar optical waveguide chip match.

2. An optical device adapted for high power according to claim 1, characterized in that: The gap between the optical fiber array and the planar optical waveguide chip meets a certain threshold, which is determined by the following method: In formula (1), ω0 represents the fiber waist radius, n1 represents the refractive index of the fiber, n2 represents the refractive index of air, ω1 represents the waist radius of the laser beam of the high-power laser entering the air medium, z1 represents the Rayleigh distance of the laser beam of the high-power laser entering the air medium, and λ represents the wavelength of the laser beam; In formula (2), n represents the number of channels of the planar optical waveguide chip, which is a positive integer; k represents the additional loss in the process of laser beam alignment, in dB, k∈[0,1]; r represents the coupling waveguide radius of the planar optical waveguide chip; η represents the coupling efficiency; IL represents the overall insertion loss value of the optical device; ω2 represents the beam waist radius when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z2 represents the Rayleigh distance when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z2 is calculated based on formula (1) and formula (2); The gap L between the optical fiber array and the planar optical waveguide chip satisfies L=z2.

3. An optical device adapted for high power according to claims 1-2, characterized in that: The wavelength of the laser of the high-power optical device is 1550 nm.

4. An optical device adapted for high power according to claim 2, characterized in that: The method also includes compensating the gap between the optical fiber array and the planar optical waveguide chip on the basis of satisfying a certain threshold.

5. An optical device adapted for high power according to claim 4, characterized in that: The compensation is determined based on the shrinkage rate of the connecting layer during the curing process. In detail, The volume shrinkage of the connecting layer is T V The linear shrinkage rate M of the connecting layer along the direction of laser emission is L , then M L =T V / 3; The total length of the connection layer set in the optical fiber array and the planar optical waveguide chip is l; The gap contraction length Δl=l×M between the optical fiber array and the planar optical waveguide chip during the curing process of the connecting layer L ; Then the gap length L between the optical fiber array and the planar optical waveguide chip is defined as L=z2+Δl.

6. A method for forming an optical device adapted for high power, characterized in that, The steps include: Provide optical fiber arrays and planar optical waveguide chips; The laser emitting surface of the optical fiber array is opposite to the laser incident surface of the planar optical waveguide chip and has a certain gap therebetween; The gap meets a certain threshold so that the laser spot of the high-power laser beam passing through the optical fiber array is located in the incident channel of the planar optical waveguide chip; Controlling the gap between the laser emitting surface of the optical fiber array and the planar optical waveguide chip; Disposing a connection layer at the outer edge of the gap; The connecting layer is cured to form the optical device.

7. A method for forming an optical device adapted for high power according to claim 6, characterized in that: The gap L is determined as follows: In formula (1), ω0 represents the fiber waist radius, n1 represents the refractive index of the fiber, n2 represents the refractive index of air, ω1 represents the waist radius ω1 of the laser beam of the high-power laser entering the air medium, z1 represents the Rayleigh distance of the laser beam of the high-power laser entering the air medium, and λ represents the wavelength of the laser beam; In formula (2), n represents the number of channels of the planar optical waveguide chip, which is a positive integer; k represents the additional loss in the process of laser beam alignment, in dB, k∈[0,1]; r represents the coupling waveguide radius of the planar optical waveguide chip; η represents the coupling efficiency; IL represents the overall insertion loss value of the optical device; ω2 represents the beam waist radius when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z2 represents the Rayleigh distance when the laser beam reaches the optical waveguide channel of the planar optical waveguide chip after passing through the air medium; z2 is calculated based on formula (1) and formula (2); The gap L between the optical fiber array and the planar optical waveguide chip satisfies L=z2.

8. A method for forming an optical device adapted for high power according to claim 7, characterized in that: The method comprises compensating the gap between the optical fiber array and the planar optical waveguide chip on the basis of satisfying a certain threshold.

9. A method for forming an optical device adapted for high power according to claim 8, characterized in that: The compensation is determined based on the shrinkage rate of the connecting layer during the curing process. In detail, The volume shrinkage of the connecting layer is T V The linear shrinkage rate M of the connecting layer along the direction of laser emission is L , then M L =T V / 3; The total length of the connection layer set in the optical fiber array and the planar optical waveguide chip is l; The gap contraction length Δl=l×M between the optical fiber array and the planar optical waveguide chip during the curing process of the connecting layer L ; Then, after compensation, the gap length L between the optical fiber array and the planar optical waveguide chip is defined as L=z2+Δl.

10. A method for forming an optical device adapted for high power according to claims 6 to 9, characterized in that: High power means the average power is greater than or equal to 2W and the peak power is at least 2KW.

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