Perovskite precursor material and preparation method thereof, perovskite material and preparation method thereof, perovskite thin film, perovskite precursor slurry, perovskite solar cell and preparation method thereof, and electric device

Abstract

The invention relates to a perovskite precursor and a preparation method thereof, a perovskite material and a preparation method thereof, a perovskite thin film, perovskite precursor slurry, a perovskite solar cell and a preparation method thereof, and an electric device. The perovskite precursor comprises a precursor base material and doped ions, the doped ions comprise at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, IIIA group element ions, acid radical ions and halide ions, and at least part of the doped ions are embedded into crystal lattices of the precursor base material.

Description

Perovskite precursor material and preparation method, perovskite material and preparation method, perovskite film, perovskite precursor slurry, perovskite solar cell and preparation method, and electrical device Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite precursor material and preparation method, a perovskite material and preparation method, a perovskite film, a perovskite precursor slurry, a perovskite solar cell and preparation method, and an electrical device. Background Art

[0002] Perovskite solar cells are a new type of cell that is currently receiving extensive research. The perovskite layer in a perovskite solar cell has a significant impact on the cell's performance. Improving the perovskite layer's materials is a promising approach to improving the performance of perovskite solar cells.

[0003] Summary of the Invention

[0004] According to various embodiments of the present application, the present application provides a perovskite precursor material, including a precursor substrate and dopant ions, wherein the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid radical ions and halogen ions.

[0005] In the above-mentioned perovskite precursor material, the performance of the precursor material can be improved by adding dopant ions. When the perovskite precursor material is prepared into a perovskite material, the grain boundaries of the perovskite substrate can be passivated to a certain extent, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0006] In some embodiments, the mass percentage of the doping ions is 0.0001% to 3% based on the mass of the perovskite precursor material.

[0007] In some embodiments, the mass percentage of the doping ions is 0.0001% to 1%.

[0008] In some embodiments, the alkali metal ions include Na + and K + At least one of .

[0009] In some embodiments, the alkaline earth metal ions include Mg 2+ and Ca 2+ At least one of .

[0010] In some embodiments, the transition metal ion comprises Fe 2+ 、Fe 3+ and Cu 2+ At least one of .

[0011] In some embodiments, the Group IIIA element ions include B 3+ 、Al 3+ 、Ga 3+ and In 3+ At least one of .

[0012] In some embodiments, the acid ion comprises Ac - PO2 3- 、CO3 2- and NO3 - At least one of .

[0013] In some embodiments, the halide ion comprises F - 、Cl - Br - , I - and I3 - At least one of .

[0014] In some embodiments, the precursor substrate includes a material with a chemical formula of MX, wherein M includes at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X includes at least one of a halide ion and a carboxylate ion.

[0015] The present application also provides a method for preparing a perovskite precursor material, comprising the following steps:

[0016] The raw materials for providing doping ions and the raw materials for synthesizing the precursor substrate are mixed and reacted in a first solvent, and the solution after the reaction is subjected to a first crystallization treatment; the doping ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid radical ions and halogen ions.

[0017] In some embodiments, the mass percentage of the doping ions is 0.0001% to 3% based on the mass of the perovskite precursor material.

[0018] In some embodiments, the mass percentage of the doping ions is 0.0001% to 1%.

[0019] In some embodiments, the precursor substrate includes a material with a chemical formula of MX, wherein M includes at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X includes at least one of a halide ion and a carboxylate ion.

[0020] In some embodiments, the precursor substrate includes a material with a chemical formula of MX, wherein M is selected from at least one of an organic amine cation and a cesium ion; X includes at least one of a halogen ion and a carboxylate ion; and the reaction temperature of mixing the raw materials for providing doping ions and the raw materials for synthesizing the precursor substrate in the first solvent is 0°C to 5°C.

[0021] In some embodiments, the first solvent is selected from at least one of water, methanol, ethanol, propanol, and isopropanol.

[0022] In some embodiments, the precursor substrate includes a material with a chemical formula of MX, wherein M is selected from at least one of lithium ions, potassium ions, rubidium ions, lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions; X includes at least one of halogen ions and carboxylate ions; and the reaction temperature of mixing the raw materials for providing doping ions and the raw materials for synthesizing the precursor substrate in the first solvent is 70° C. to 90° C.

[0023] In some embodiments, the first solvent is selected from at least one of water, methanol, ethanol, propanol, and isopropanol.

[0024] The present application also provides a perovskite precursor slurry, comprising a second solvent and the above-mentioned perovskite precursor material or a perovskite precursor material obtained by the above-mentioned method for preparing the perovskite precursor material.

[0025] The present application also provides a perovskite material, comprising a perovskite substrate and doped ions in the above-mentioned perovskite precursor material, wherein at least some of the doped ions are located at the grain boundaries of the perovskite substrate, the perovskite substrate comprises at least one of organic amine cations, cesium ions, lithium ions, potassium ions and rubidium ions, the perovskite substrate further comprises at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions and europium ions, and the perovskite substrate further comprises at least one of halogen ions and carboxylate ions.

[0026] The present application also provides a method for preparing a perovskite material, comprising the following steps:

[0027] Mixing and reacting raw materials including the above-mentioned perovskite precursor material or the perovskite precursor material prepared by the above-mentioned preparation method of the perovskite precursor material in a third solvent, and subjecting the resulting solution to a second crystallization treatment;

[0028] The perovskite precursor material includes at least one of organic amine cations, cesium ions, lithium ions, potassium ions and rubidium ions, the perovskite precursor material also includes at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions and europium ions, and the perovskite precursor material also includes at least one of halogen ions and carboxylate ions.

[0029] The present application also provides a perovskite film, comprising the above-mentioned perovskite material or a perovskite material prepared by the above-mentioned method for preparing the perovskite material.

[0030] The present application also provides a method for preparing a perovskite thin film, comprising the following steps: coating and annealing the above-mentioned perovskite precursor slurry.

[0031] The present application also provides a perovskite solar cell, comprising a first electrode, a perovskite layer, and a second electrode stacked in sequence;

[0032] The perovskite layer comprises the above-mentioned perovskite material; or,

[0033] The perovskite layer includes the perovskite material obtained by the above-mentioned preparation method of the perovskite material; or,

[0034] The perovskite layer includes the above-mentioned perovskite film; or,

[0035] The perovskite layer is formed by coating and annealing the perovskite precursor slurry.

[0036] The present application also provides a method for preparing a perovskite solar cell, comprising the following steps:

[0037] forming a perovskite layer on the first electrode;

[0038] preparing a second electrode on the perovskite layer;

[0039] The perovskite layer includes a perovskite material, which includes a perovskite substrate and doping ions. The doping ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions and halogen ions, and at least part of the doping ions are located at the grain boundaries of the perovskite substrate.

[0040] The present application also provides an electrical device, comprising the above-mentioned perovskite solar cell or a perovskite solar cell prepared by the above-mentioned method for preparing a perovskite solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] To more clearly illustrate the technical solution of this application, the following is a brief introduction to the drawings used in this application. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the drawings without inventive effort.

[0042] FIG1 is a schematic structural diagram of an exemplary perovskite solar cell.

[0043] In order to better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more of the accompanying drawings. The additional details or examples used to describe the accompanying drawings should not be considered to limit the scope of the disclosed inventions, the presently described embodiments and / or examples, and any of the best modes currently understood for these inventions. DETAILED DESCRIPTION

[0044] The following describes the perovskite solar cell, its preparation method, and its power-consuming device in further detail with reference to specific examples. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to facilitate a more thorough and comprehensive understanding of the present disclosure.

[0045] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0047] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0048] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0049] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0050] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0051] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0052] Unless otherwise specified, the term "or" is used in this application to be inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied by any of the following conditions: A is true or present, and B is false or absent; A is false or absent, and B is true or present; or both A and B are true, or both A and B are present.

[0053] If not otherwise specified, in this application, the term "room temperature" generally refers to 4°C to 30°C, preferably 25±5°C.

[0054] The present application provides a perovskite precursor, which includes a precursor substrate and dopant ions, wherein the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid radical ions, and halogen ions.

[0055] In the perovskite precursor material of the present application, the performance of the precursor material can be improved by adding dopant ions. When the perovskite precursor material is prepared into a perovskite material, the grain boundaries of the perovskite substrate can be passivated to a certain extent, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0056] In some embodiments, at least a portion of the dopant ions are embedded in the crystal lattice of the precursor substrate. This can improve the doping uniformity of the dopant ions. When the perovskite precursor material is prepared into a perovskite material, the dopant ions can be located at the grain boundaries of the perovskite substrate, further passivating the grain boundaries and further improving the photoelectric conversion efficiency of the perovskite solar cell. It is understood that in the perovskite precursor material, some dopant ions may be located on the surface of the precursor substrate.

[0057] In some embodiments, the mass percentage of the dopant ions, calculated as a percentage of the mass of the perovskite precursor material, is 0.0001% to 3%. Alternatively, the mass percentage of the dopant ions, calculated as a percentage of the mass of the perovskite precursor material, is 0.0001%, 0.001%, 0.01%, 0.02%, 0.03%, 0.05%, 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.2%, 1.5%, 1.8%, 2%, 2.2%, 2.5%, 2.8%, 3%, etc. Further optionally, the mass percentage of the dopant ions is 0.0001% to 1%.

[0058] In some embodiments, when the doping ion is a cation, the mass percentage of the doping ion is 0.0001% to 0.5% of the mass of the perovskite precursor material. When the doping ion is an anion, the mass percentage of the doping ion is 0.0001% to 3% of the mass of the perovskite precursor material.

[0059] Alternatively, the type and content of the dopant ions can be measured by inductively coupled plasma spectroscopy (ICP), ion chromatography (IC), etc. Specifically, cations can be measured by ICP, and anions can be measured by IC. The distribution of the dopant ions in the precursor material can be measured by energy dispersive spectroscopy (EDS).

[0060] In some embodiments, the alkali metal ions include Na + and K + At least one of the alkaline earth metal ions. 2+ and Ca 2+ At least one of the transition metal ions. 2+ 、Fe 3+ and Cu 2+ At least one of the following. Group IIIA element ions include B 3+ 、Al 3+ 、Ga 3+ and In 3+ At least one of the following. Acid ions include Ac - PO2 3- 、CO3 2- and NO3 - At least one of the halogen ions. - 、Cl - Br - , I - and I3 - At least one of .

[0061] It is understood that perovskite materials are usually prepared from halide precursors, and the chemical formula of the prepared perovskite material is ABX3 or A2CDX6, where:

[0062] A is an inorganic or organic or organic-inorganic mixed cation, comprising at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation; the organic amine cation is selected from (NR1R2R3R4) + 、(R1R2N=CR3R4) + 、(R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) +, wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1-20 alkyl or substituted or unsubstituted aryl; A is optionally methylamino (CH3NH3 + )(MA + ), carbamimidyl (HC(NH2)2 + )(FA + ), cesium ions (Cs + ) and rubidium (Rb + ), further optionally methylamino (CH3NH3 + ) or carboxamidino (HC(NH2)2 + ).

[0063] B is an inorganic or organic or organic-inorganic mixed cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum and europium, and optionally a divalent metal ion Pb 2+ and Sn 2+ At least one of .

[0064] C is an inorganic, organic, or organic-inorganic mixed cation, optionally a monovalent metal ion Ag. + wait.

[0065] D is an inorganic or organic or organic-inorganic mixed cation, optionally a trivalent metal ion bismuth cation Bi 3+ 、Antimony cation Sb 3+ 、Indium cation In 3+ wait.

[0066] X is an inorganic or organic or organic-inorganic mixed anion, optionally one or more of a halogen anion and a carboxylate anion, and further optionally a bromide ion (Br - ) or iodide ion (I - ).

[0067] Corresponding to the chemical formula ABX3 or A2CDX6 of the perovskite material, the perovskite precursor can be represented as a material including at least one of the chemical formulas AX, BX, CX and DX, wherein A, B, C, D and X can be selected from the above-listed materials.

[0068] In some embodiments, the precursor substrate comprises a material having the chemical formula MX, wherein M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X comprises at least one of a halide ion and a carboxylate. It will be appreciated that when both the dopant ion and X comprise a halide ion, the halide ion in the dopant ion and the halide ion in X may be the same or different. Optionally, the organic amine cation is a monovalent organic amine cation, the cesium ion is a monovalent cesium ion, the lithium ion is a monovalent lithium ion, the potassium ion is a monovalent potassium ion, the rubidium ion is a monovalent rubidium ion, the lead ion is a divalent lead ion, the tin ion is a divalent tin ion, the zinc ion is a divalent zinc ion, the titanium ion is a tetravalent titanium ion, the antimony ion is a trivalent antimony ion, the bismuth ion is a trivalent bismuth ion, the nickel ion is a divalent nickel ion, the iron ion is a divalent iron ion or a trivalent iron ion, and the cobalt ion is a divalent cobalt ion or a tetravalent cobalt ion. trivalent cobalt ion, silver ion is monovalent silver ion, copper ion is divalent copper ion, gallium ion is trivalent gallium ion, germanium ion is divalent germanium ion or tetravalent germanium ion, magnesium ion is divalent magnesium ion, calcium ion is divalent calcium ion, indium ion is trivalent indium ion, aluminum ion is trivalent aluminum ion, manganese ion is divalent manganese ion or tetravalent manganese ion or hexavalent manganese ion or heptavalent manganese ion, chromium ion is trivalent chromium ion, molybdenum ion is trivalent molybdenum ion, and europium ion is divalent europium ion or trivalent europium ion.

[0069] The present application also provides a method for preparing a perovskite precursor material. The method comprises the following steps: mixing raw materials for providing dopant ions and raw materials for synthesizing a precursor substrate in a first solvent, and subjecting the resulting solution to a first crystallization treatment; the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

[0070] In this method for preparing a perovskite precursor material, raw materials for providing dopant ions and raw materials for synthesizing a precursor substrate are mixed and reacted in a first solvent, followed by a first crystallization treatment, thereby preparing the perovskite precursor in situ. This preparation method allows for uniform dispersion of the dopant ions, effectively preventing agglomeration of the dopant ions and thus preventing the performance of the perovskite precursor from being restricted by dopant ion agglomeration. This improves the performance of the perovskite precursor material, and in turn, the performance of the perovskite material and perovskite solar cell.

[0071] In addition, by mixing the raw materials for providing doping ions and the raw materials for synthesizing the precursor substrate in the first solvent, the introduction of doping ions is beneficial to the crystallization of the perovskite precursor material, thereby forming a perovskite precursor material with a more stable structure.

[0072] Furthermore, through this preparation method, the doping ions can be embedded into the crystal lattice of the precursor substrate, further improving the uniformity of the doping ion distribution.

[0073] Optionally, when the raw material for providing dopant ions and the raw material for synthesizing the precursor substrate are mixed and reacted in the first solvent, the raw material for providing dopant ions and the raw material for synthesizing the precursor substrate are added to the first solvent at the same time and then mixed and reacted.

[0074] In some embodiments, the mass percentage of the dopant ions, as a percentage of the mass of the perovskite precursor material, is 0.0001% to 3%; alternatively, the mass percentage of the dopant ions is 0.0001% to 1%. It is understood that the mass percentage of the dopant ions, as a percentage of the mass of the perovskite precursor material, can be selected from the mass percentages listed above for the perovskite precursor material, and will not be repeated here.

[0075] In some embodiments, the precursor substrate comprises a material having a chemical formula of MX, wherein M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X comprises at least one of a halide ion and a carboxylate ion.

[0076] In some embodiments, the precursor substrate comprises a material having the chemical formula MX, wherein M is selected from at least one of an organic amine cation and a cesium ion; X comprises at least one of a halide ion and a carboxylate ion; and the reaction temperature for mixing the raw materials for providing the dopant ions and the raw materials for synthesizing the precursor substrate in a first solvent is 0°C to 5°C. Alternatively, the reaction temperature may be, but is not limited to, 0°C, 1°C, 2°C, 3°C, 4°C, 5°C, etc. Alternatively, the first solvent is selected from at least one of water, methanol, ethanol, propanol, and isopropanol.

[0077] In some embodiments, the precursor substrate comprises a material having the chemical formula MX, wherein M is selected from at least one of an organic amine cation and a cesium ion; and X comprises at least one of a halide ion and a carboxylate ion. The product obtained by the first crystallization is dried at a temperature between 40°C and 100°C. Optionally, the drying temperature of the product obtained by the first crystallization is 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, etc. Optionally, the drying is performed in an oven.

[0078] In other embodiments, the precursor substrate comprises a material having the chemical formula MX, wherein M is selected from at least one of lithium ions, potassium ions, rubidium ions, lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions; X comprises at least one of halide ions and carboxylate ions; and the temperature for mixing the raw materials for providing the dopant ions and the raw materials for synthesizing the precursor substrate in a first solvent is 70°C to 90°C. Alternatively, the reaction temperature may be, but is not limited to, 70°C, 72°C, 74°C, 75°C, 78°C, 80°C, 82°C, 84°C, 85°C, 88°C, 90°C, etc. Alternatively, the first solvent is selected from at least one of water, methanol, ethanol, propanol, and isopropanol.

[0079] The present application also provides a perovskite precursor slurry. The perovskite precursor slurry includes a second solvent and the perovskite precursor material described above or a perovskite precursor material obtained by the method for preparing the perovskite precursor material described above. Optionally, the second solvent includes at least one of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP).

[0080] It is understood that when preparing a perovskite solar cell, the perovskite precursor slurry can be coated and annealed to form a perovskite layer.

[0081] The present application also provides a perovskite material. The perovskite material includes a perovskite substrate and dopant ions in the above-mentioned perovskite precursor material. The dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions, and at least some of the dopant ions are located at the grain boundaries of the perovskite substrate. The perovskite substrate includes at least one of organic amine cations, cesium ions, lithium ions, potassium ions, and rubidium ions. The perovskite substrate also includes at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions. The perovskite substrate also includes at least one of halogen ions and carboxylate ions. In the perovskite material, the dopant ions can passivate the grain boundaries, thereby enabling the perovskite solar cell to have a higher photoelectric conversion efficiency.

[0082] In some embodiments, at least some of the dopant ions in the perovskite material are located on the surface of the perovskite substrate. In this case, the dopant ions can repair surface defects in the perovskite material, further improving the photoelectric conversion efficiency of the perovskite solar cell.

[0083] Optionally, in the perovskite material, the alkali metal ions include Na + and K + At least one of the alkaline earth metal ions includes Fe 2+ 、Fe 3+ and Cu 2+ At least one of the Group IIIA element ions including B 3+ 、Al 3+ 、Ga 3+ and In 3+ At least one of; acid ions include Ac - PO2 3- 、CO3 2- and NO3 - At least one of; halogen ions include F - 、Cl - Br - , I - and I3 - At least one of .

[0084] It is understood that the chemical formula of the perovskite substrate is ABX3 or A2CDX6, where:

[0085] A is an inorganic or organic or organic-inorganic mixed cation, comprising at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation; the organic amine cation is selected from (NR1R2R3R4) +、(R1R2N=CR3R4) + 、(R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) + , wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1-20 alkyl or substituted or unsubstituted aryl; A is optionally methylamino (CH3NH3 + )(MA + ), carbamimidyl (HC(NH2)2 + )(FA + ), cesium ions (Cs + ) and rubidium (Rb + ), further optionally methylamino (CH3NH3 + ) or carboxamidino (HC(NH2)2 + ).

[0086] B is an inorganic or organic or organic-inorganic mixed cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum and europium, and optionally a divalent metal ion Pb 2+ and Sn 2+ At least one of .

[0087] C is an inorganic, organic, or organic-inorganic mixed cation, optionally a monovalent metal ion Ag. + wait.

[0088] D is an inorganic or organic or organic-inorganic mixed cation, optionally a trivalent metal ion bismuth cation Bi 3+ 、Antimony cation Sb 3+ 、Indium cation In 3+ wait.

[0089] X is an inorganic or organic or organic-inorganic mixed anion, optionally one or more of a halogen anion and a carboxylate anion, and further optionally a bromide ion (Br - ) or iodide ion (I - ).

[0090] The present application also provides a method for preparing a perovskite material. The method for preparing a perovskite material comprises the following steps: mixing and reacting raw materials including the above-mentioned perovskite precursor or the perovskite precursor prepared by the above-mentioned method for preparing a perovskite precursor in a third solvent, and subjecting the resulting solution to a second crystallization treatment; wherein the perovskite precursor comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, and a rubidium ion; the perovskite precursor further comprises at least one of a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and the perovskite precursor further comprises at least one of a halogen ion and a carboxylate ion.

[0091] In the method for preparing a perovskite material, a raw material comprising the above-mentioned perovskite precursor or a perovskite precursor prepared by the method for preparing a perovskite precursor is mixed and reacted in a third solvent, and then a second crystallization treatment is performed. The perovskite material can be prepared in situ, and the dopant ions can enter the grain boundaries of the perovskite substrate. At the same time, through this preparation method, the dopant ions can be evenly dispersed, which can effectively avoid the agglomeration of the dopant ions, and avoid the restriction of the performance of the perovskite material due to the agglomeration of the dopant ions, thereby improving the performance of the perovskite solar cell. In addition, by mixing and reacting the raw material comprising the above-mentioned perovskite precursor or a perovskite precursor prepared by the method for preparing a perovskite precursor in a third solvent, the introduction of the dopant ions is conducive to the crystallization of the perovskite material, forming a perovskite material with a more stable structure.

[0092] In the preparation method of the perovskite material, a perovskite material having a chemical formula of ABX3 or A2CDX6 is obtained by selecting a perovskite precursor material.

[0093] Optionally, when the raw materials including the above-mentioned perovskite precursor material or the perovskite precursor material prepared by the above-mentioned preparation method of the perovskite precursor material are mixed and reacted in a third solvent, the raw materials including the above-mentioned perovskite precursor material or the perovskite precursor material prepared by the above-mentioned preparation method of the perovskite precursor material are simultaneously added to the third solvent and then mixed and reacted.

[0094] Optionally, the third solvent includes at least one of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP).

[0095] Alternatively, in the present application, the crystallization may be performed by antisolvent crystallization, cooling crystallization, etc. Alternatively, the first crystallization treatment may be performed by antisolvent crystallization, cooling crystallization, etc. Alternatively, the second crystallization treatment may be performed by antisolvent crystallization, cooling crystallization, etc.

[0096] The present application also provides a perovskite film, which includes the above-mentioned perovskite material or a perovskite material prepared by the above-mentioned method for preparing the perovskite material.

[0097] The present application also provides a method for preparing a perovskite film, which comprises the following steps: coating and annealing the perovskite precursor slurry.

[0098] The present application also provides a perovskite solar cell. The perovskite solar cell comprises a first electrode, a perovskite layer, and a second electrode stacked in sequence. The perovskite layer comprises the aforementioned perovskite material; or, the perovskite layer comprises a perovskite material obtained by the aforementioned method for preparing the perovskite material; or, the perovskite layer comprises the aforementioned perovskite thin film; or, the perovskite layer is formed by coating and annealing the aforementioned perovskite precursor slurry.

[0099] In some embodiments, an electron transport layer is further included, and the electron transport layer is located between the perovskite layer and the second electrode. Optionally, the material of the electron transport layer includes fullerene and its derivatives.

[0100] Optionally, the first electrode is a transparent conductive glass or metal electrode. The second electrode is a transparent conductive glass or metal electrode. Further, optionally, the first electrode and the second electrode are different.

[0101] In some embodiments, the first electrode is typically transparent conductive glass. Optionally, the first electrode is selected from at least one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO). Optionally, the first electrode layer has a thickness of 100 nm to 1000 nm, optionally 300 nm to 800 nm.

[0102] In some embodiments, the second electrode is typically a metal electrode. Optionally, the second electrode is selected from at least one of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and alloys thereof. Optionally, the second electrode has a thickness of 20 nm to 200 nm, optionally 60 nm to 100 nm, and further optionally 70 nm to 90 nm. It will be understood that the perovskite layer is a light absorbing layer composed of a perovskite material.

[0103] In some embodiments, the perovskite layer has a band gap of 1.20 eV to 2.30 eV.

[0104] In some embodiments, the thickness of the perovskite layer is 200 nm to 800 nm, optionally 400 nm to 600 nm. Further optionally, the thickness of the perovskite layer is 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, etc.

[0105] In some embodiments, the perovskite solar cell further comprises a hole transport layer, which is located between the first electrode and the perovskite layer. Optionally, the hole transport layer can be at least one of the following materials and their derivatives and materials obtained by doping or passivation: poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly-3 hexylthiophene (P3HT), triphenylamine with triptycene as the core (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N- (4-anilino) carbazole-spirobifluorene (CzPAF-SBF), poly (3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS), polythiophene, nickel oxide (NiO x ), molybdenum oxide (MoO3), cuprous iodide (CuI), cuprous oxide (CuO), etc.

[0106] In some embodiments, the perovskite solar cell further includes a first passivation layer, the first passivation layer being located between the perovskite layer and the hole transport layer. Optionally, the material of the first passivation layer includes at least one of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and Me-4PACz (CAS No.: 2747959-96-0).

[0107] In some embodiments, the perovskite solar cell further comprises a second passivation layer and / or a buffer layer, the second passivation layer and / or the buffer layer being located between the electron transport layer and the second electrode. Optionally, the second passivation layer and the buffer layer are made of bathocuproine (BCP).

[0108] It can be understood that perovskite solar cells include formal perovskite solar cells and inverse perovskite solar cells. For formal perovskite solar cells, the formal perovskite solar cell includes a first electrode and an electron transport layer, a perovskite layer, a hole transport layer and a second electrode stacked in sequence on the first electrode. For inverse perovskite solar cells, the inverse perovskite solar cell includes a first electrode and a hole transport layer, a perovskite layer, an electron transport layer and a second electrode stacked in sequence on the anode. In the present application, the corresponding formal perovskite solar cell and inverse perovskite solar cell can be obtained by selecting the materials of the first electrode and the second electrode.

[0109] Please refer to Figure 1, which shows the structure of a perovskite solar cell in one embodiment of the present application. The first electrode is FTO, on which a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer, a passivation layer or buffer layer, and a metal electrode are sequentially stacked. A glass substrate is placed on the surface of the FTO away from the perovskite layer.

[0110] The present application also provides a method for preparing a perovskite solar cell. The method comprises the following steps: preparing a perovskite layer on a first electrode; preparing a second electrode on the perovskite layer; the perovskite layer comprises a perovskite material, the perovskite material comprises a perovskite substrate and dopant ions, the dopant ions comprising at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions, with at least a portion of the dopant ions being located at the grain boundaries of the perovskite substrate.

[0111] Optionally, the perovskite layer is prepared by spin coating and annealing. Optionally, the electron transport layer is prepared by spin coating and annealing. Optionally, the second electrode is prepared by evaporation.

[0112] The present application also provides an electrical device. The electrical device includes the aforementioned perovskite solar cell. Optionally, the electrical device is an electrical device used in, for example, the communications, transportation, industrial and agricultural, or lighting fields. Examples of electrical devices include satellites, communications equipment, traffic lights, lighthouses, wireless telephone booths, oil drilling monitoring equipment, power supply systems, camping lanterns, electric vehicles, and electronic device chargers.

[0113] Example

[0114] Below, the embodiment of the present application is described. The embodiment described below is exemplary and is only used to explain the present application, and is not to be construed as limiting the present application. Where specific techniques or conditions are not specified in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. Reagents or instruments used that do not specify the manufacturer are conventional products that can be obtained commercially.

[0115] The photoelectric conversion efficiency of the perovskite solar cell in the embodiment and comparative example is tested as follows: under standard simulated sunlight (AM 1.5G, 100mW / cm 2 ) to test the photoelectric conversion efficiency of perovskite solar cells under irradiation.

[0116] Example 1

[0117] (1) Preparation method of perovskite precursor in this embodiment:

[0118] At 0°C to 5°C, formamidine acetate was added to 20 mL of anhydrous ethanol and stirred for 0.5 h. Hypophosphorous acid and hydroiodic acid were then added and the mixture was reacted for 2 h. After the reaction was completed, the solvent was removed by rotary evaporation. Anhydrous ethanol was then added to dissolve the product. The dissolved solution was added dropwise to ether to precipitate doped formamidine iodide (FAI). The product was then dried in an oven at 60°C. In the perovskite precursor obtained in this embodiment, the precursor substrate was formamidine iodide and the doping ion was PO2 2- .

[0119] (2) Preparation method of perovskite slurry in this embodiment:

[0120] 450 mg of lead iodide, 120 mg of iodomethane (FAI) obtained in (1), 15 mg of chloromethylamine, 8 mg of iodomethane, and 6 mg of cesium iodide were weighed and dissolved in a mixed solution of 0.8 mL of DMF and 0.2 mL of DMSO, stirred for 3 h, and filtered with a 0.22 μm organic filter membrane to obtain a perovskite slurry.

[0121] (3) Preparation method of perovskite solar cell in this embodiment:

[0122] S101: Take a set of FTO conductive glass with a specification of 2cm*2cm, etch out the 0.5cm area on both sides with a laser marking machine, clean it with a detergent, and then ultrasonicate it in deionized water, ethanol, and acetone for 10 minutes in sequence; after ultrasonication, blow dry it with N2 and set aside.

[0123] S102: Take a piece of FTO conductive glass and prepare a nickel oxide layer by magnetron sputtering.

[0124] S103: Dissolve poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA) in chlorobenzene at a concentration of 1 mg / mL, stir and filter with a 0.45 μm filter membrane, take 50 μL and drop it on the nickel oxide layer, spin-coat at a speed of 4000 rpm, and anneal on a hot plate at 100 ° C for 10 minutes to obtain a passivation layer.

[0125] S104: The perovskite slurry obtained in (2) is coated on the passivation layer by a coating method, spin-coated at a speed of 3000 rpm, annealed at 120° C. for 30 min, and cooled to room temperature to form a perovskite layer with a thickness of 500 nm.

[0126] S105: The glass obtained in S104 is placed in an evaporation device, and 25 nm C60, 5 nm BCP, and 100 nm Cu are sequentially evaporated to obtain a perovskite solar cell.

[0127] Example 2

[0128] Compared with Example 1, the difference of this embodiment is that in the preparation method of the perovskite precursor, formamidine acetate is replaced by methylamine. In the perovskite precursor obtained in this embodiment, the precursor substrate is iodine methylamine and the doping ion is PO2 2- .

[0129] Example 3

[0130] The preparation method of the perovskite precursor in this embodiment is as follows:

[0131] At 0°C to 5°C, cesium carbonate and calcium carbonate were added to 20 mL of water, stirred for 10 minutes, hydrochloric acid was added dropwise, and the mixture was reacted for 2 hours. After the reaction was completed, the solvent was removed by rotary evaporation, and anhydrous ethanol was added to dissolve the product. The dissolved solution was added dropwise to ether to precipitate doped cesium chloride, and dried in an oven at 60°C. In the perovskite precursor obtained in this embodiment, the precursor substrate is cesium chloride and the doping ion is Ca 2+ .

[0132] Example 4

[0133] Compared with Example 3, the difference of this embodiment is that in the preparation method of the perovskite precursor, calcium carbonate is replaced by iron hydroxide. In the perovskite precursor obtained in this embodiment, the precursor substrate is cesium chloride and the doping ion is Fe 3+ .

[0134] Example 5

[0135] Compared with Example 1, the difference of this embodiment is that in the preparation method of the perovskite precursor, formamidine acetate is replaced by methylamine, and hydroiodic acid is replaced by hydrochloric acid. In the perovskite precursor obtained in this embodiment, the precursor substrate is chloromethylamine, and the doping ion is PO2 2- .

[0136] Examples 6 to 13

[0137] Compared with Example 1, Examples 6 to 13 differ in that the doping contents of the doping ions are different.

[0138] Examples 14 to 20

[0139] Compared with Example 3, Examples 14 to 20 are different in that the doping contents of the doping ions are different.

[0140] Comparative Example 1

[0141] Compared with Example 1, the difference of this comparative example is that no hypophosphorous acid is added in the preparation method of the perovskite precursor.

[0142] Comparative Example 2

[0143] Compared with Example 1, the difference of this comparative example is that the mixing reaction is carried out at 25°C.

[0144] Comparative Example 3

[0145] Compared with Example 1, the difference in this comparative example is that the drying temperature is 120°C.

[0146] The precursor matrix, doping ions, doping ion content, and photoelectric conversion efficiency of the perovskite solar cells in Examples 1 to 21 and Comparative Examples 1 to 3 are shown in Table 1.

[0147] Table 1

[0148] In Table 1, the doping content represents the mass percentage of the doping ions to the mass of the perovskite precursor material.

[0149] Example 22

[0150] (1) Preparation method of perovskite precursor in this embodiment:

[0151] At 80°C, KI, lead acetate, and FeI2 (raw materials containing doping ions) were added to deionized water, mixed and reacted, and then cooled to crystallize. The resulting perovskite precursor has a precursor substrate of PbI2 and a doping ion of Fe. 2+ .

[0152] (2) Preparation method of perovskite slurry in this embodiment:

[0153] 4.61 g of the perovskite precursor obtained in (1), 2.6 g of CsI, and 1.72 g of FAI were dissolved in a DMF / NMP (4 / 1, v / v) solvent and mixed to obtain a perovskite slurry.

[0154] (3) Preparation method of perovskite solar cell in this embodiment:

[0155] S101: Take a set of FTO conductive glass with a specification of 2cm*2cm, etch out the 0.5cm area on both sides with a laser marking machine, clean it with a detergent, and then ultrasonicate it in deionized water, ethanol, and acetone for 10 minutes in sequence; after ultrasonication, blow dry it with N2 and set aside.

[0156] S102: Take a piece of FTO conductive glass and prepare a nickel oxide layer by magnetron sputtering.

[0157] S103: Dissolve poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA) in chlorobenzene at a concentration of 1 mg / mL, stir and filter with a 0.45 μm filter membrane, take 50 μL and drop it on the nickel oxide layer, spin-coat at a speed of 4000 rpm, and anneal on a hot plate at 100 ° C for 10 minutes to obtain a passivation layer.

[0158] S104: The perovskite slurry obtained in (2) is coated on the passivation layer by a coating method, spin-coated at a speed of 3000 rpm, annealed at 120° C. for 30 min, and cooled to room temperature to form a perovskite layer with a thickness of 500 nm.

[0159] S105: The glass obtained in S104 is placed in an evaporation device, and 25 nm C60, 5 nm BCP, and 100 nm Cu are sequentially evaporated to obtain a perovskite solar cell.

[0160] Example 23 to Example 33

[0161] Compared with Example 22, Examples 23 to 33 differ in the precursor substrate, dopant ions, and doping contents, as shown in Table 2.

[0162] Comparative Example 4

[0163] Compared with Example 22, the difference of this comparative example is that in the preparation method of the perovskite slurry, PbI2 is undoped PbI2, and FeI2 is added to the mixed solution.

[0164] Comparative Example 5

[0165] Compared with Example 22, the difference of this comparative example is that FeI2 is not added.

[0166] Comparative Example 6

[0167] Compared with Example 22, the difference of this comparative example is that in the preparation method of the perovskite slurry, PbBr2 is undoped PbBr2, and FeI2 is added to the mixed solution.

[0168] The precursor matrix, doping ions, doping ion content, and photoelectric conversion efficiency of the perovskite solar cells in Examples 22 to 33 and Comparative Examples 4 to 6 are shown in Table 2.

[0169] Table 2

[0170] In Table 2, the doping content represents the mass percentage of the doping ions to the mass of the perovskite precursor material.

[0171] It can be seen from Tables 1 and 2 that the cells prepared from the doped perovskite precursors have higher photoelectric conversion efficiency.

[0172] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the present application, any other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A perovskite precursor material, characterized in that: The invention comprises a precursor substrate and doping ions, wherein the doping ions comprise at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, IIIA group element ions, acid radical ions and halogen ions.

2. The perovskite precursor material according to claim 1, characterized in that: The mass percentage of the doping ions is 0.0001% to 3% based on the mass of the perovskite precursor material; Optionally, the mass percentage of the doping ions is 0.0001% to 1%.

3. The perovskite precursor material according to any one of claims 1 to 2, characterized in that: The doping ions include at least one of the following features: (1) The alkali metal ions include Na + and K + At least one of; (2) The alkaline earth metal ions include Mg 2+ and Ca 2+ At least one of; (3) The transition metal ions include Fe 2+ , Fe 3+ and Cu 2+ At least one of; (4) The IIIA group element ions include B 3+ 、Al 3+ , Ga 3+ andIn 3+ At least one of; (5) The acid ions include Ac - PO2 3- 、CO3 2- and NO3 - At least one of; (6) The halogen ions include F - , Cl - Br - ,I - and I3 - At least one of .

4. The perovskite precursor material according to any one of claims 1 to 3, characterized in that: The precursor substrate includes a material with a chemical formula of MX, wherein M includes at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X includes at least one of a halogen ion and a carboxylate ion.

5. A method for preparing a perovskite precursor material, characterized in that: The steps include: A raw material for providing doping ions and a raw material for synthesizing a precursor substrate are mixed and reacted in a first solvent, and the resulting solution is subjected to a first crystallization treatment; the doping ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid radical ions, and halogen ions.

6. The method for preparing the perovskite precursor material according to claim 5, characterized in that: The mass percentage of the doping ions is 0.0001% to 3% based on the mass of the perovskite precursor material; Optionally, the mass percentage of the doping ions is 0.0001% to 1%.

7. The method for preparing a perovskite precursor material according to any one of claims 5 to 6, characterized in that: The precursor substrate includes a material with a chemical formula of MX, wherein M includes at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and X includes at least one of a halogen ion and a carboxylate ion.

8. The method for preparing a perovskite precursor according to any one of claims 5 to 6, characterized in that: The precursor substrate comprises a material with a chemical formula of MX, wherein M is selected from at least one of an organic amine cation and a cesium ion; X comprises at least one of a halogen ion and a carboxylate ion; the reaction temperature of mixing the raw material for providing doping ions and the raw material for synthesizing the precursor substrate in the first solvent is 0° C. to 5° C.; Optionally, the first solvent is selected from at least one of water, methanol, ethanol, propanol and isopropanol.

9. The method for preparing a perovskite precursor material according to any one of claims 5 to 6, characterized in that: The precursor substrate comprises a material with a chemical formula of MX, wherein M is selected from at least one of lithium ions, potassium ions, rubidium ions, lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions and europium ions; X comprises at least one of halogen ions and carboxylate ions; the reaction temperature of mixing the raw material for providing doping ions and the raw material for synthesizing the precursor substrate in the first solvent is 70° C. to 90° C.; Optionally, the first solvent is selected from at least one of water, methanol, ethanol, propanol and isopropanol.

10. A perovskite precursor slurry, characterized in that: The method comprises a second solvent and also comprises the perovskite precursor material according to any one of claims 1 to 4 or the perovskite precursor material obtained by the preparation method according to any one of claims 5 to 9.

11. A perovskite material, characterized in that: The invention relates to a perovskite substrate and doped ions in a perovskite precursor material according to any one of claims 1 to 4, wherein at least part of the doped ions are located at the grain boundaries of the perovskite substrate, the perovskite substrate comprises at least one of organic amine cations, cesium ions, lithium ions, potassium ions and rubidium ions, the perovskite substrate further comprises at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions and europium ions, and the perovskite substrate further comprises at least one of halogen ions and carboxylate ions.

12. A method for preparing a perovskite material, characterized in that: The steps include: Mixing raw materials including the perovskite precursor material according to any one of claims 1 to 4 or the perovskite precursor material prepared by the preparation method according to claims 5 to 9 in a third solvent for reaction, and subjecting the resulting solution to a second crystallization treatment; The perovskite precursor material includes at least one of organic amine cations, cesium ions, lithium ions, potassium ions and rubidium ions, the perovskite precursor material also includes at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions and europium ions, and the perovskite precursor material also includes at least one of halogen ions and carboxylate ions.

13. A perovskite film, characterized in that: Including the perovskite material according to claim 11 or the perovskite material prepared by the preparation method according to claim 12.

14. A method for preparing a perovskite film, characterized in that: The method comprises the following steps: coating and annealing the perovskite precursor slurry according to claim 10.

15. A perovskite solar cell, characterized in that: It includes a first electrode, a perovskite layer and a second electrode which are stacked in sequence; The perovskite layer comprises the perovskite material according to claim 11; or, The perovskite layer comprises the perovskite material obtained by the preparation method according to claim 12; or, The perovskite layer comprises the perovskite film according to claim 13; or, The perovskite layer is formed by coating and annealing the perovskite precursor slurry according to claim 10.

16. A method for preparing a perovskite solar cell, characterized in that: The steps include: forming a perovskite layer on the first electrode; preparing a second electrode on the perovskite layer; The perovskite layer comprises a perovskite material, wherein the perovskite material comprises a perovskite substrate and doping ions, wherein the doping ions comprise at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, group IIIA element ions, acid radical ions and halogen ions, and at least part of the doping ions are located in the perovskite at the grain boundaries of the substrate.

17. An electrical device, characterized in that: Including the perovskite solar cell according to claim 15 or the perovskite solar cell prepared by the preparation method according to claim 16.

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