A vapor deposition method

Abstract

The present invention provides an evaporation method, comprising the following steps: (1) performing a one-step evaporation treatment on an initial ingot-shaped evaporation material having a groove formed on its top; and (2) placing a granular evaporation material in the groove formed in the ingot-shaped evaporation material after the one-step evaporation treatment, and performing a two-step evaporation treatment until the evaporation is completed. The evaporation method of the present invention effectively reduces the probability of splashing during the evaporation process by forming a groove on the top of the ingot-shaped evaporation material, thereby significantly improving the quality and uniformity of the thin film product.

Description

Technical Field

[0001] The invention belongs to the technical field of evaporation, and relates to an evaporation method. Background Art

[0002] Vapor deposition is the process of depositing a film onto a substrate by evaporating or sublimating the material in a vacuum environment. It is also known as vacuum evaporation or vacuum coating. In chip manufacturing, evaporation is a common surface treatment technique used to deposit a thin film on a material.

[0003] The materials used for evaporation come in a variety of forms, including flakes, granules, or blocks. Block-shaped evaporation materials can be shaped like a frustum, ring, semi-ring, fan ring, or disk. During the vacuum evaporation coating process, uneven evaporation of the evaporation material due to uneven heating or other factors can produce tiny particles or droplets. These particles or droplets can easily splash out of the evaporation source during the evaporation process, creating a splash. Furthermore, these particles or droplets may land on the substrate surface, affecting the uniformity and quality of the film. Splashing is a common problem during the evaporation process, resulting in reduced uniformity and quality of the film.

[0004] CN108977770A discloses a surface treatment method for a copper evaporation material, comprising: providing a copper evaporation material; performing a first pickling operation on the copper evaporation material; after the first pickling operation, performing a centrifugal grinding operation on the copper evaporation material; after the centrifugal grinding operation, performing a cleaning operation on the copper evaporation material; and after the cleaning operation, performing a drying process on the copper evaporation material. After the first pickling operation, the copper evaporation material is subjected to a centrifugal grinding operation. The centrifugal grinding operation can remove copper oxides on the surface of the copper evaporation material, reduce the surface roughness of the copper evaporation material, improve the surface brightness and smoothness of the copper evaporation material, reduce the surface micropores of the copper evaporation material, reduce the contact area between the copper evaporation material and air, and improve the copper evaporation material's antioxidant capacity, thereby improving the purity of the copper evaporation material and correspondingly improving the quality and performance of the copper evaporation material.

[0005] CN111394697A discloses a surface treatment method for a metal evaporation material. The surface treatment method comprises the following steps: ultrasonically cleaning the metal evaporation material with an organic solvent; pickling the metal evaporation material after ultrasonic cleaning, using an inorganic mixed acid pickling solution; and ultrasonically cleaning the pickled metal evaporation material again before drying. This surface treatment method, by sequentially ultrasonically cleaning and pickling the metal evaporation material, effectively removes impurities and oxide layers from the evaporation material's surface, improving the cleanliness and purity of the evaporation material and contributing to enhanced coating performance.

[0006] The above solutions are all aimed at clearing the oxide layer and impurities on the surface of the evaporation material, but no in-depth study is conducted on the effect of the shape of the evaporation material on the evaporation coating, making it difficult to truly solve the problem of splashing sources during the evaporation process. Summary of the Invention

[0007] The object of the present invention is to provide an evaporation method. The evaporation method of the present invention effectively reduces the probability of splashing during the evaporation process by digging grooves on the top of the ingot-shaped evaporation material, thereby significantly improving the quality and uniformity of the thin film product.

[0008] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0009] In a first aspect, the present invention provides an evaporation method, comprising the following steps:

[0010] (1) performing a one-step evaporation process on an ingot-shaped initial evaporation material having a groove on the top;

[0011] (2) placing the granular evaporation material in the groove of the ingot-shaped evaporation material obtained after the one-step evaporation treatment and performing a two-step evaporation treatment until the evaporation is completed.

[0012] The cross section of the ingot-shaped initial evaporation material of the present invention is an inverted trapezoid, and the top is the long bottom of the inverted trapezoid. During the evaporation process, the ingot-shaped initial evaporation material diffuses and evaporates from the center of the groove to the outside, so the shape of the groove remains unchanged.

[0013] The present invention provides a groove on the top of the ingot-shaped initial evaporation material, pre-processing it for evaporation. This reduces the surface tension of the material after high-temperature melting, dispersing the energy of the evaporation process and reducing the possibility of splashing. The groove also increases the specific surface area of ​​the material, dispersing the energy generated by the high temperature over a larger surface area, significantly reducing the probability of splashing. When evaporation reaches a certain point, granular evaporation material is added to the groove and evaporation continues. The presence of the groove increases the stability of the granular evaporation material, preventing it from rolling during the evaporation process, further preventing splashing during use.

[0014] Preferably, the groove is in an inverted trapezoidal shape.

[0015] Preferably, based on the top width of the ingot-shaped initial evaporation material being 100%, the opening width of the groove is 80-95%, for example, 80%, 82%, 85%, 90% or 95%, etc., and is not limited to the listed values. Other values ​​not listed within this numerical range are also applicable.

[0016] Preferably, the bottom width of the groove is smaller than the bottom width of the ingot-shaped initial evaporation material.

[0017] Preferably, based on the height of the ingot-shaped initial evaporation material being 100%, the depth of the groove is 20-25%, for example, 20%, 21%, 22%, 24% or 25%, etc., and is not limited to the listed values. Other values ​​not listed within this numerical range are also applicable.

[0018] Preferably, based on the height of the initial ingot-shaped evaporation material being 100%, the height of the ingot-shaped evaporation material obtained after the one-step evaporation treatment is 50-70%, for example, 50%, 55%, 60%, 65% or 70%, etc., and is not limited to the listed values. Other values ​​not listed within this numerical range are also applicable.

[0019] Preferably, the shape of the granular evaporation material includes cylindrical and / or square shapes.

[0020] Preferably, the height of the granular evaporation material after being placed in the groove is a, and the depth of the groove of the ingot-shaped evaporation material obtained after one-step evaporation treatment is b, and a>b.

[0021] Preferably, 0 <a-b<1 / 3a。

[0022] Preferably, the materials of the ingot-shaped initial evaporation material and the granular evaporation material independently include any one or a combination of at least two of metal materials, semiconductor materials or insulating materials. Typical but non-limiting combinations include a combination of metal materials and insulating materials, a combination of semiconductor materials and insulating materials, or a combination of metal materials and semiconductor materials, etc.

[0023] Preferably, the metal material includes any one of aluminum, nickel, titanium, silver or gold, or a combination of at least two of them. Typical but non-limiting combinations include a combination of aluminum, titanium and gold, a combination of aluminum and silver, or a combination of silver, nickel and gold.

[0024] Preferably, the semiconductor material includes silicon and / or germanium.

[0025] Preferably, the insulating material includes aluminum oxide and / or silicon oxide.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] (1) The evaporation method of the present invention effectively reduces the probability of splashing during the evaporation process by digging a groove on the top of the ingot-shaped evaporation material, thereby significantly improving the quality and uniformity of the thin film product.

[0028] (2) The evaporation method of the present invention reduces the amount of spatter generated during the deposition process to less than 4.4%, and the resulting deposited film has good quality and uniformity. Under the same conditions, the evaporation method of the present invention reduces the probability of spatter during the deposition process from 10% before the improvement to 2%. The degree of reduction in spatter probability becomes more significant as the evaporation power increases. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic cross-sectional view of the ingot-shaped evaporation material provided with grooves as described in Example 1.

[0030] Figure 2 This is a cross-sectional schematic diagram of placing a granular evaporation material in a groove of an ingot-shaped evaporation material as described in Example 1, wherein 1 is the ingot-shaped evaporation material provided with a groove, and 2 is the granular evaporation material.

[0031] Figure 3 This is a schematic cross-sectional view of the ingot-shaped evaporation material described in Comparative Example 1.

[0032] Figure 4 This is a cross-sectional schematic diagram of placing the granular evaporation material on the upper surface of the ingot evaporation material as described in Comparative Example 1, 2 is the granular evaporation material, and 3 is the ingot evaporation material. DETAILED DESCRIPTION

[0033] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0034] Example 1

[0035] This embodiment provides an evaporation method, which includes the following steps:

[0036] (1) A groove with an upper width of 40 mm, a lower width of 35 mm, and a depth of 5 mm was dug out from the top of an aluminum ingot evaporation material with a top width of 45 mm, a bottom width of 36 mm, and a height of 22 mm to obtain an ingot-shaped evaporation material 1 with a groove. The cross-sectional schematic diagram of the ingot-shaped evaporation material 1 with a groove is shown as follows: Figure 1 As shown, a one-step evaporation treatment is performed under vacuum conditions, and the evaporation is suspended after the ingot height reaches 13.2 mm;

[0037] (2) Place the aluminum granular evaporation material 2 in the groove of the ingot evaporation material 1, as shown in the cross-sectional diagram. Figure 2 As shown, the height a of the granular evaporation material 2 is 6 mm, the depth b of the groove is 5 mm, ab=1 mm, and the evaporation is continued until the evaporation is completed.

[0038] Example 2

[0039] This embodiment provides an evaporation method, which includes the following steps:

[0040] (1) A groove with an upper width of 35 mm, a lower width of 30 mm, and a depth of 4 mm was dug out from the top of a titanium ingot evaporation material having a top width of 40 mm, a bottom width of 32 mm, and a height of 21 mm to obtain an ingot-shaped evaporation material provided with a groove. The ingot was subjected to a one-step evaporation treatment under vacuum conditions. The evaporation was stopped after the ingot height reached 14 mm.

[0041] (2) Place the silicon granular evaporation material in the groove of the ingot evaporation material. The height a of the granular evaporation material is 5.2 mm, the depth b of the groove is 4 mm, and ab=1.2 mm. Continue evaporation until the evaporation is completed.

[0042] Example 3

[0043] This embodiment provides an evaporation method, which includes the following steps:

[0044] (1) A groove with an upper width of 42 mm, a lower width of 32 mm, and a depth of 6 mm was dug out from the top of a silicon dioxide ingot evaporation material having a top width of 45 mm, a bottom width of 35 mm, and a height of 24 mm to obtain an ingot-shaped evaporation material provided with a groove. The ingot was subjected to a one-step evaporation treatment under vacuum conditions. The evaporation was stopped after the ingot height reached 12 mm.

[0045] (2) Place the silicon dioxide granular evaporation material in the groove of the ingot evaporation material. The height a of the granular evaporation material is 6.8 mm, the depth b of the groove is 6 mm, and ab=0.8 mm. Continue evaporation until the evaporation is completed.

[0046] Example 4

[0047] This embodiment provides an evaporation method, which includes the following steps:

[0048] (1) A groove with an upper width of 40 mm, a lower width of 35 mm, and a depth of 5 mm was dug out from the top of an aluminum ingot evaporation material having a top width of 45 mm, a bottom width of 36 mm, and a height of 22 mm to obtain an ingot-shaped evaporation material provided with a groove. The ingot was subjected to a one-step evaporation treatment under vacuum conditions. The evaporation was stopped after the ingot height reached 13.2 mm.

[0049] (2) Place aluminum granular evaporation material in the groove of the ingot evaporation material, the height a of the granular evaporation material is 5 mm, the depth b of the groove is 5 mm, and ab=0 mm, and continue evaporation until the evaporation is completed.

[0050] Example 5

[0051] This embodiment provides an evaporation method, which includes the following steps:

[0052] (1) A groove with an upper width of 40 mm, a lower width of 35 mm, and a depth of 5 mm was dug out from the top of an aluminum ingot evaporation material having a top width of 45 mm, a bottom width of 36 mm, and a height of 22 mm to obtain an ingot-shaped evaporation material provided with a groove. The ingot was subjected to a one-step evaporation treatment under vacuum conditions. The evaporation was stopped after the ingot height reached 13.2 mm.

[0053] (2) Place aluminum granular evaporation material in the groove of the ingot evaporation material, the height a of the granular evaporation material is 4.5 mm, the depth b of the groove is 5 mm, and ab = -0.5 mm, and continue evaporation until the evaporation is completed.

[0054] Example 6

[0055] This embodiment provides an evaporation method, which includes the following steps:

[0056] (1) A groove with an upper width of 40 mm, a lower width of 35 mm, and a depth of 5 mm was dug out from the top of an aluminum ingot evaporation material having a top width of 45 mm, a bottom width of 36 mm, and a height of 22 mm to obtain an ingot-shaped evaporation material provided with a groove. The ingot was subjected to a one-step evaporation treatment under vacuum conditions. The evaporation was stopped after the ingot height reached 13.2 mm.

[0057] (2) Place aluminum granular evaporation material in the groove of the ingot evaporation material, the height a of the granular evaporation material is 7.5 mm, the depth b of the groove is 5 mm, and ab=2.5 mm, and continue evaporation until the evaporation is completed.

[0058] Comparative Example 1

[0059] This embodiment provides an evaporation method, which includes the following steps:

[0060] (1) An aluminum ingot evaporation material 3 having a top width of 45 mm, a bottom width of 36 mm, and a height of 22 mm is used. The cross-sectional schematic diagram of the ingot evaporation material is as follows: Figure 3 As shown, a one-step evaporation treatment is performed under vacuum conditions, and the evaporation is suspended after the ingot height reaches 13.2 mm;

[0061] (2) Place the aluminum granular evaporation material 2 on the upper surface of the ingot evaporation material 3, as shown in the cross-sectional diagram. Figure 4 As shown, the height a of the granular evaporation material 2 is 6 mm, and the evaporation is continued until the evaporation is completed.

[0062] Performance testing:

[0063] According to the above-mentioned examples and comparative examples, by detecting the sputtering source amount, film quality, and film uniformity, among which, the film quality is observed by the naked eye. If there are no pinholes, stripes, blisters, peeling, burrs, nodules, pits, charring, cracking, peeling, falling off, abnormal color, or non-deposition on the film, it is excellent; if 1-2 of the above situations occur, it is good; if three or more of the above situations occur, it is poor. The film uniformity is detected by XRF. When the thickness difference < 5μm, it is excellent; when the thickness difference is 5 - 10μm, it is good; when the thickness difference > 10μm, it is poor. The test results are shown in Table 1:

[0064] Table 1

[0065]

[0066]

[0067] As can be seen from Table 1, from Examples 1 - 6, it can be obtained that for the evaporation method described in the present invention, the sputtering source amount generated during the evaporation process can reach below 4.4%. Moreover, the quality and uniformity of the evaporated film are good. By adjusting the evaporation conditions, the sputtering source amount generated during the evaporation process can reach below 2.1%, and the quality and uniformity of the evaporated film can reach excellent levels.

[0068] By comparing Example 1 with Examples 4 - 6, it can be obtained that in the evaporation method described in the present invention, the relationship between the height of the granular evaporation material in the groove and the depth of the groove of the ingot-shaped evaporation material will affect the evaporation effect. Controlling the relationship between the height a of the granular evaporation material in the groove and the depth b of the groove of the ingot-shaped evaporation material within 0 < a - b < 1 / 3a results in a better evaporation effect. If the height a of the granular evaporation material in the groove ≤ the depth b of the groove of the ingot-shaped evaporation material, the quality and uniformity of the film can be better controlled. If the height a of the granular evaporation material in the groove is too large, exceeding 1 / 3 of the height a of the granular evaporation material in the groove, it will lead to an increase in the sputtering source incidence rate and a decrease in the film quality and uniformity. <0OO0151>[[ID=1l]]

[0069] By comparing Example 1 with Comparative Example 1, it can be obtained that in the present invention, a groove is provided at the top of the ingot-shaped evaporation material and pre-evaporation treatment is carried out on it, which can reduce the surface tension of the material after high-temperature melting, disperse the energy during the sputtering source process during evaporation, reduce the possibility of sputtering source, and at the same time, the groove will increase the specific surface area of the material, enabling the energy generated at high temperature to be dispersed on a larger surface, greatly reducing the occurrence probability of the sputtering source. When the evaporation progresses to a certain extent, granular evaporation material is added to the groove to continue the evaporation. The existence of the groove can increase the stability of the granular evaporation material, prevent it from rolling during the evaporation process, and further avoid the sputtering source during use.

[0070] The applicant declares that the above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. A vapor deposition method, characterized in that: The evaporation method comprises the following steps: (1) performing a one-step evaporation process on an ingot-shaped initial evaporation material having a groove on the top; (2) placing the granular evaporation material in the groove of the ingot-shaped evaporation material obtained after the one-step evaporation treatment and performing the two-step evaporation treatment until the evaporation is completed; The groove is in an inverted trapezoidal shape. With the top width of the ingot-shaped initial evaporation material as 100%, the opening width of the groove is 80-95%, the bottom width of the groove is less than the bottom width of the ingot-shaped initial evaporation material, the height of the granular evaporation material after being placed in the groove is a, and the depth of the groove of the ingot-shaped evaporation material obtained after the one-step evaporation treatment is b. The height a of the granular evaporation material is 6 mm, the depth b of the groove is 5 mm, and ab=1 mm.

2. The vapor deposition method according to claim 1, wherein The shape of the granular evaporation material includes cylindrical and / or square shapes.

3. The vapor deposition method according to claim 1, wherein The materials of the ingot-shaped initial evaporation material and the granular evaporation material independently include any one of metal materials, semiconductor materials, and insulating materials, or a combination of at least two of them.

4. The vapor deposition method according to claim 3, wherein The metal material includes any one of aluminum, nickel, titanium, silver or gold, or a combination of at least two of them.

5. The vapor deposition method according to claim 3, wherein The semiconductor material includes silicon and / or germanium.

6. The vapor deposition method according to claim 3, wherein The insulating material includes aluminum oxide and / or silicon oxide.

Images