GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid state power control

Abstract

The invention discloses a GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid state power control. The GaN HEMT device radiation resistance evaluation circuit comprises an IDS measurement unit, a VDS measurement unit, a Vgs measurement unit, an Ig measurement unit, a signal conditioning unit, a load simulation unit and a data online control and monitoring unit. According to the invention, real-time online detection and evaluation of the single event effect and the total dose effect in the circuit can be realized, the safety of circuit operation is guaranteed, and a reliable evaluation method is provided for circuit troubleshooting. And the method is of great significance to the safe application of the GaN HEMT device for aerospace solid-state power control. The problems that an anti-radiation test device of a conventional GaN HEMT device cannot achieve online measurement of key data at the same time, test data samples are discontinuous, and the test efficiency is low are solved.

Description

Technical Field

[0001] The invention relates to a GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control, belonging to the field of electronic technology. Background Art

[0002] Solid-state power control uses power tubes as core control switches. GaN HEMT devices have the advantages of small size, wide bandgap, high critical breakdown electric field, and strong high temperature tolerance in aerospace solid-state power control applications.

[0003] On the one hand, the radiation resistance evaluation faced by GaN HEMT devices in aerospace applications is quite different from that of traditional Si-based semiconductor power tubes. The radiation resistance evaluation of traditional Si-based semiconductor power tubes cannot be directly used for the radiation resistance evaluation of GaN HEMT devices.

[0004] On the other hand, the radiation resistance evaluation circuit and analysis method for the dynamic performance of semiconductor power tubes usually use standard square wave circuits. The establishment time of the waveform during the turn-on and turn-off processes is in the order of ns to us, which is not suitable for aerospace solid-state power control applications. Therefore, traditional radiation resistance evaluation circuits and analysis methods cannot truly simulate the radiation resistance and safety margins of GaN HEMT devices for aerospace solid-state power control applications. Summary of the invention

[0005] The technical problem solved by the present invention is to overcome the shortcomings of the prior art, provide a GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control, and realize the radiation resistance evaluation of GaN HEMT devices for aerospace solid-state power control applications.

[0006] The technical solution adopted by the present invention is:

[0007] A GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control, comprising an IDS measurement unit, a VDS measurement unit, a Vgs measurement unit, an Ig measurement unit, a signal conditioning unit, a load simulation unit, and a data online control and monitoring unit;

[0008] The IDS measurement unit and the Ig measurement unit are used to measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device respectively;

[0009] The Vgs measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the gate and source of the GaN HEMT device in real time;

[0010] The VDS measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the drain and source of the GaN HEMT device in real time;

[0011] The signal conditioning unit realizes the switching of the driving power supply voltage value and voltage polarity of the GaN HEMT device by receiving the control instructions transmitted by the data online control and monitoring unit, thereby realizing the power supply of the GaN HEMT device under different test conditions;

[0012] The load simulation unit uses switches K1 to K5 to enable the passage, and RL2 to RL5 correspond to resistances at different currents and powers, respectively, to achieve measurement at different currents and powers;

[0013] The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation, and dynamically adjusts the switch combination selection of the load simulation unit and the signal output of the signal conditioning unit according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit are read in real time, and the array is synthesized into a data packet for real-time storage for radiation resistance evaluation.

[0014] The radiation resistance evaluation method performs threshold comparison between the real-time stored measured data such as Vo_IDS, Vo_VDS, Vo_Vgs, Vo_Ig, etc. and the database pre-stored in the data online control and monitoring unit, completes the radiation resistance evaluation according to the set criteria, and realizes the real-time transmission of the evaluation results to the PC through the data online control and monitoring unit.

[0015] Furthermore, when the IDS measurement unit and the Ig measurement unit respectively measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device, the ohm method is used for measurement. The non-inductive resistors R1 and R2 are line sampling resistors. R1 is connected between the IDS measurement unit and the GaN HEMT device, and R2 is connected between the Ig measurement unit and the GaN HEMT device. The dynamic IDS and Ig values ​​of the GaN HEMT device are calculated by real-time acquisition of the voltage flowing through R1 and R2.

[0016] Furthermore,

[0017] The IDS measurement unit and the Ig measurement unit have the same circuit structure, and both include resistors Ra, Rb, Rc, Rd, Re, Rf, and transistors Q1, Q2, Q3, Q4, Q5, Q6;

[0018] For the IDS measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R1, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R1, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the IDS measurement unit;

[0019] For the Ig measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R2, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R2, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the Ig measurement unit.

[0020] Furthermore, the signal conditioning unit realizes voltage output regulation between ±6V, generates two categories of steady-state voltage signals and periodic on-off signals, wherein the on-off signal is adjustable, and the characteristic is a slow on-off modulation signal, and the signal rise establishment time is set according to the characteristics of the GaN HEMT device applied to the corresponding aerospace solid-state power controller.

[0021] Further, the load simulation unit is a combination of switches and resistors, including switches K1 to K5, resistors RL2, RL3, RL4, and RL5;

[0022] One end of the switch K1 is connected to the source of the GaN HEMT device, and the other end is connected to the negative end of the DC power supply; one end of the switch K2 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL2 and then connected to the negative end of the DC power supply; one end of the switch K3 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL3 and then connected to the negative end of the DC power supply; one end of the switch K4 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL4 and then connected to the negative end of the DC power supply; one end of the switch K5 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL5 and then connected to the negative end of the DC power supply;

[0023] K1~K5 are used to realize the switching of different resistance values, among which RL2 is the resistance value corresponding to 10% of the rated current, RL3 is the resistance value corresponding to 50% of the rated current, RL4 is the resistance value corresponding to 90% of the rated current, and RL5 is the resistance value corresponding to 100% of the rated current; the irradiation test evaluation process is controlled and switched by the data online control and monitoring unit according to the working conditions at different times.

[0024] Furthermore, the data online control and monitoring unit includes an ADC sampling circuit, a data calculation and storage circuit, and a data remote control and telemetry circuit;

[0025] The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation, and dynamically adjusts the switch combination selection of the load simulation unit and the signal output of the signal conditioning unit according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit is read in real time. Among them, the ADC sampling circuit is responsible for the collection of data from each measurement unit, the data calculation and storage circuit is responsible for calculating the collected data and storing it in a specific format, and the data remote control and telemetry circuit is responsible for uploading the measured and calculated data to the PC.

[0026] Furthermore, the data online control and monitoring unit synthesizes the array into data packets and stores them in real time in the following format:

[0027] Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Test condition coding <![CDATA[I DS ]]> <![CDATA[V GS ]]> <![CDATA[V DS ]]> <![CDATA[I GS ]]> <![CDATA[R DSON ]]>

[0028] Among them, the output processing calculation is as follows:

[0029] I DS =Vo_IDS / (K1*R1)

[0030] V GS =Vo_Vgs / K2

[0031] V DS =Vo_VDS / K3

[0032] I GS =Vo_Ig / (K4*R2)

[0033] R DSON =V DS / I DS

[0034] In the formula, K1~K4 are constants; R DSONis the on-resistance of the GaN HEMT device.

[0035] Furthermore, the data sampling and storage cycle of the data online control and monitoring unit is in the order of microseconds; the timing of uploading the data of the data online control and monitoring unit to the host computer is the following two ways:

[0036] 1) The host computer actively issues a data reading instruction, and the data online control and monitoring unit uploads the stored data packet;

[0037] 2) The data storage limit of the online control and monitoring unit is reached, and the data online control and monitoring unit uploads the stored data packets.

[0038] In a second aspect, the present invention further provides a method for evaluating and analyzing the radiation resistance of a GaN HEMT device, comprising the following steps:

[0039] 1) Place the GaN HEMT device on a three-dimensional mobile platform, and set the LET ions to be incident at an angle θ(i). When the number of incident ions reaches 10 7 ions / cm 2 The total dose effect was considered during the analysis; the data under different test conditions were recorded in real time before, during and after the test, and fitted into curves. The GaN HEMT transfer curve, output characteristic curve, leakage characteristic curve and CV characteristic curve were extracted according to the working conditions and corresponding data;

[0040] 2) When V DS When the voltage starts to drop from the DC power supply output voltage value or suddenly becomes 0, the output current I DS If it increases sharply, it indicates that the single particle burnout function of the device fails, and the test is terminated; after the single particle burnout failure occurs, the power is cut off and restarted, and the GaNHEMT function is abnormal;

[0041] 3) When the VGS voltage suddenly becomes 0 or an abnormal value, the VDS voltage drops or the output current ID increases sharply, indicating that the device has a single-particle gate failure, and the test is terminated; after a single-particle gate failure occurs, the power is turned off and restarted, and the GaN HEMT function is abnormal;

[0042] 4) After ion irradiation with a certain LET value, if no single particle burnout failure is found, it is determined that the device's single particle burnout failure threshold is greater than the LET value; otherwise, it is determined to be lower than the LET value.

[0043] The advantages of the present invention compared with the prior art are:

[0044] (1) The signal conditioning characteristic of the present invention is a slow-on and slow-off characteristic, which can truly simulate the application of aerospace solid-state power controllers. For the application of GaN HEMT in solid-state power controller products, it can more truly simulate the influence of radiation factors on its characteristics.

[0045] (2) The measurement circuit of the present invention has high temperature stability, and the measurement accuracy will not be affected by the temperature of the device and the surrounding environment during the irradiation test, and the evaluation accuracy is high.

[0046] (3) The present invention can achieve real-time online measurement and recording of irradiation process data during single particle testing or total dose testing, with high evaluation efficiency.

[0047] (4) The test process and the testing process of the present invention do not require replacement of wiring, and different working conditions can be selected by command switching. The parameter testing process is simple, and the process test data is automatically recorded, which is highly efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a circuit principle block diagram of the present invention;

[0049] Figure 2 This is a circuit diagram for implementing current sampling in the present invention. DETAILED DESCRIPTION

[0050] The specific embodiments of the present invention are further described in detail below with reference to the accompanying drawings.

[0051] like Figure 1 As shown, the present invention proposes a GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control, including an IDS measurement unit 1, a VDS measurement unit 2, a Vgs measurement unit 3, an Ig measurement unit 4, a signal conditioning unit 5, a load simulation unit 6 and a data online control and monitoring unit 7; 8 in the figure is a GaN HEMT device circuit;

[0052] The IDS measurement unit and the Ig measurement unit are used to measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device respectively;

[0053] The Vgs measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the gate and source of the GaN HEMT device in real time;

[0054] The VDS measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the drain and source of the GaN HEMT device in real time;

[0055] The signal conditioning unit realizes the switching of the driving power supply voltage value and voltage polarity of the GaN HEMT device by receiving the control instructions transmitted by the data online control and monitoring unit, thereby realizing the power supply of the GaN HEMT device under different test conditions;

[0056] The load simulation unit uses switches K1 to K5 to enable the passage, and RL2 to RL5 correspond to resistances at different currents and powers, respectively, to achieve measurement at different currents and powers;

[0057] The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation, and dynamically adjusts the switch combination selection of the load simulation unit and the signal output of the signal conditioning unit according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit are read in real time, and the array is synthesized into a data packet for real-time storage for radiation resistance evaluation.

[0058] The radiation resistance evaluation method performs threshold comparison between the real-time stored measured data such as Vo_IDS, Vo_VDS, Vo_Vgs, Vo_Ig, etc. and the database pre-stored in the data online control and monitoring unit, completes the radiation resistance evaluation according to the set criteria, and realizes the real-time transmission of the evaluation results to the PC through the data online control and monitoring unit.

[0059] In the present invention, when the IDS measurement unit and the Ig measurement unit respectively measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device, the ohm method is used for measurement. The non-inductive resistors R1 and R2 are line sampling resistors. R1 is connected between the IDS measurement unit and the GaN HEMT device, and R2 is connected between the Ig measurement unit and the GaN HEMT device. The dynamic IDS and Ig values ​​of the GaN HEMT device are calculated by real-time acquisition of the voltage flowing through R1 and R2.

[0060] The circuit implementation of IDS measurement unit and Ig measurement unit is as follows Figure 2 As shown, the IDS measurement unit and the Ig measurement unit have the same circuit structure, both including resistors Ra, Rb, Rc, Rd, Re, Rf, and transistors Q1, Q2, Q3, Q4, Q5, Q6;

[0061] For the IDS measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R1, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R1, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the IDS measurement unit;

[0062] For the Ig measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R2, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R2, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the Ig measurement unit.

[0063] When designing the parameter values, select Ra=Rb, Rc=Rd, and select a pair of tubes with completely consistent amplification factors for Q1 and Q2. The calculation formula for the current IDS or Ig is as follows:

[0064]

[0065] Where: Rsense represents the value of R1 (IDS measurement unit shown in the figure) or R2 (Ig measurement unit shown in the figure).

[0066] In the present invention, the signal conditioning unit can realize voltage output regulation between ±6V, and can generate two categories of steady-state voltage signals and periodic on / off signals, wherein the on / off signal is adjustable, and the characteristic is a slow on / off modulation signal, and the signal rise establishment time is set according to the characteristics of GaN HEMT applied to the corresponding aerospace solid-state power controller;

[0067] In the present invention, the load simulation unit is a combination of switches and resistors, including switches K1 to K5, resistors RL2, RL3, RL4, and RL5. One end of the switch K1 is connected to the source of the GaN HEMT device, and the other end is connected to the negative end of the DC power supply; one end of the switch K2 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL2 and then connected to the negative end of the DC power supply; one end of the switch K3 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL3 and then connected to the negative end of the DC power supply; one end of the switch K4 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL4 and then connected to the negative end of the DC power supply; one end of the switch K5 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL5 and then connected to the negative end of the DC power supply.

[0068] The purpose of K1~K5 is to achieve switching of different resistance values, where RL2 is the resistance value corresponding to 10% of the rated current, RL3 is the resistance value corresponding to 50% of the rated current, RL4 is the resistance value corresponding to 90% of the rated current, and RL5 is the resistance value corresponding to 100% of the rated current.

[0069] The irradiation test evaluation process is controlled and switched by the data online control and monitoring unit according to the working conditions at different times. The specific methods are as follows:

[0070]

[0071] In the present invention, the data online control and monitoring unit comprises an ADC sampling circuit, a data calculation and storage circuit, and a data remote control and telemetry circuit.

[0072] The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation. The switch combination selection of the load simulation unit and the signal output of the signal conditioning unit are dynamically adjusted according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit is read in real time. The ADC sampling circuit is responsible for the data collection of each measurement unit, the data calculation and storage circuit is responsible for calculating the collected data and storing it in a specific format, and the data remote control telemetry circuit is responsible for uploading the measured and calculated data to the PC. The data online control and monitoring unit synthesizes the array into data packets and stores them in real time in the following format:

[0073] Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Test condition coding <![CDATA[I DS ]]> <![CDATA[V GS ]]> <![CDATA[V DS ]]> <![CDATA[I GS ]]> <![CDATA[R DSON ]]>

[0074] Among them, the output processing calculation is as follows:

[0075] I DS =Vo_IDS / (K1*R1)

[0076] V GS =Vo_Vgs / K2

[0077] V DS =Vo_VDS / K3

[0078] I GS =Vo_Ig / (K4*R2)

[0079] R DSON =V DS / I DS

[0080] In the formula, K1~K4 are constants; R DSON is the on-resistance of the GaN HEMT device.

[0081] In the present invention, the data sampling and storage cycle of the data online control and monitoring unit is in the order of microseconds; the timing of uploading the data of the data online control and monitoring unit to the host computer is the following two ways:

[0082] 1) The host computer actively issues a data reading instruction, and the data online control and monitoring unit uploads the stored data packet;

[0083] 2) The data storage limit of the online control and monitoring unit is reached, and the data online control and monitoring unit uploads the stored data packets;

[0084] The radiation resistance evaluation and analysis method of the GaN HEMT device suitable for aerospace solid-state power control described in the present invention is:

[0085] 1) Place the GaN HEMT device on a three-dimensional mobile platform, and set the LET ions to be incident at an angle θ(i). When the number of incident ions reaches 10 7 ions / cm 2 The total dose effect was considered during the analysis; the data under different test conditions were recorded in real time before, during and after the test, and fitted into curves. The GaN HEMT transfer curve, output characteristic curve, leakage characteristic curve and CV characteristic curve were extracted according to the working conditions and corresponding data;

[0086] 2) When V DS When the voltage starts to drop from the DC power supply output voltage value or suddenly becomes 0, the output current I DS If it increases sharply, it indicates that the single particle burnout function of the device fails, and the test is terminated; after the single particle burnout failure occurs, the power is cut off and restarted, and the GaNHEMT function is abnormal;

[0087] 3) When the VGS voltage suddenly becomes 0 or an abnormal value, the VDS voltage drops or the output current ID increases sharply, indicating that the device has a single-particle gate failure, and the test is terminated; after a single-particle gate failure occurs, the power is turned off and restarted, and the GaN HEMT function is abnormal;

[0088] 4) After ion irradiation with a certain LET value, if no single particle burnout failure is found, it is determined that the device's single particle burnout failure threshold is greater than the LET value; otherwise, it is determined to be lower than the LET value.

[0089] The contents not described in detail in the specification of the present invention belong to the common knowledge of those skilled in the art.

Claims

1. A GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control, characterized in that: Including IDS measurement unit, VDS measurement unit, Vgs measurement unit, Ig measurement unit, signal conditioning unit, load simulation unit, data online control and monitoring unit; The IDS measurement unit and the Ig measurement unit are used to measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device respectively; The Vgs measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the gate and source of the GaN HEMT device in real time; The VDS measurement unit is implemented by a low-voltage operational amplifier differential sampling method to measure the voltage value across the drain and source of the GaN HEMT device in real time; The signal conditioning unit realizes the switching of the driving power supply voltage value and voltage polarity of the GaN HEMT device by receiving the control instructions transmitted by the data online control and monitoring unit, thereby realizing the power supply of the GaN HEMT device under different test conditions; The load simulation unit adopts switches K1 to K5 to realize the gating of the path, and RL2 to RL5 correspond to the resistance under different currents and powers respectively, so as to realize the measurement under different currents and powers; The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation, and dynamically adjusts the switch combination selection of the load simulation unit and the signal output of the signal conditioning unit according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit are read in real time, and the array is synthesized into a data packet for real-time storage for radiation resistance evaluation.

2. The radiation resistance evaluation circuit of a GaN HEMT device suitable for aerospace solid-state power control according to claim 1, characterized in that: When the IDS measurement unit and the Ig measurement unit respectively measure the dynamic current IDS between the drain and source of the GaN HEMT device and the dynamic current Ig between the gate and source of the GaN HEMT device, the ohm method is used for measurement. The non-inductive resistors R1 and R2 are line sampling resistors. R1 is connected between the IDS measurement unit and the GaN HEMT device, and R2 is connected between the Ig measurement unit and the GaN HEMT device. The dynamic IDS and Ig values ​​of the GaN HEMT device are calculated by real-time acquisition of the voltage flowing through R1 and R2.

3. The radiation resistance evaluation circuit of a GaN HEMT device suitable for aerospace solid-state power control according to claim 2, characterized in that: The IDS measurement unit and the Ig measurement unit have the same circuit structure, and both include resistors Ra, Rb, Rc, Rd, Re, Rf, and transistors Q1, Q2, Q3, Q4, Q5, Q6; For the IDS measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R1, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R1, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the IDS measurement unit; For the Ig measurement unit, one end of the resistor Ra is connected to the high potential end of the resistor R2, and the other end is connected to the emitters of Q1, Q3 and the collector of Q4; one end of the resistor Rb is connected to the low potential end of the resistor R2, and the other end is connected to the emitter of Q2; the collector of Q5 and the collector of Q1 are commonly connected to the bases of Q1 and Q2; the collector of Q6 and the collector of Q2 are interconnected and commonly connected to the base of Q3; one end of Rc is connected to the emitter of Q5, one end of Rd is connected to the emitter of Q6, the other end of Rc and the other end of Rd are commonly connected to the GND end of the DC power supply input loop; the collector of Q3 is connected to the base of Q4; one end of Rf is connected to Q4 and serves as the output end Vo of the Ig measurement unit.

4. The radiation resistance evaluation circuit of a GaN HEMT device suitable for aerospace solid-state power control according to claim 1, characterized in that: The signal conditioning unit realizes voltage output regulation between ±6V, and generates two categories of steady-state voltage signals and periodic on-off signals. The on-off signal is adjustable, and its characteristic is a slow on-off modulation signal. The signal rise establishment time is set according to the characteristics of the GaN HEMT device applied to the corresponding aerospace solid-state power controller.

5. The radiation resistance evaluation circuit of GaN HEMT device suitable for aerospace solid-state power control according to claim 1, characterized in that: The load simulation unit is a combination of switches and resistors, including switches K1 to K5, resistors RL2, RL3, RL4, and RL5; One end of the switch K1 is connected to the source of the GaN HEMT device, and the other end is connected to the negative end of the DC power supply; one end of the switch K2 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL2 and then connected to the negative end of the DC power supply; one end of the switch K3 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL3 and then connected to the negative end of the DC power supply; one end of the switch K4 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL4 and then connected to the negative end of the DC power supply; one end of the switch K5 is connected to the source of the GaN HEMT device, and the other end is connected in series with RL5 and then connected to the negative end of the DC power supply; K1~K5 are used to realize the switching of different resistance values, among which RL2 is the resistance value corresponding to 10% of the rated current, RL3 is the resistance value corresponding to 50% of the rated current, RL4 is the resistance value corresponding to 90% of the rated current, and RL5 is the resistance value corresponding to 100% of the rated current; The irradiation test evaluation process is controlled and switched by the data online control and monitoring unit according to the working conditions at different times.

6. The radiation resistance evaluation circuit of a GaN HEMT device suitable for aerospace solid-state power control according to claim 1, characterized in that: The data online control and monitoring unit includes an ADC sampling circuit, a data calculation and storage circuit, and a data remote control and telemetry circuit; The data online control and monitoring unit is interconnected with the host computer through a serial data bus. The host computer sets the corresponding test conditions in advance before the radiation resistance test evaluation, and dynamically adjusts the switch combination selection of the load simulation unit and the signal output of the signal conditioning unit according to different test conditions. At the same time, the voltage amplified signal on R1 collected by the IDS measurement unit is recorded as Vo_IDS, the voltage signal collected by the VDS measurement unit is recorded as Vo_VDS, the voltage signal collected by the Vgs measurement unit is recorded as Vo_Vgs, the voltage amplified signal recorded by the Ig measurement unit is recorded as Vo_Ig, and the output value of the signal conditioning unit is read in real time. Among them, the ADC sampling circuit is responsible for the collection of data from each measurement unit, the data calculation and storage circuit is responsible for calculating the collected data and storing it in a specific format, and the data remote control and telemetry circuit is responsible for uploading the measured and calculated data to the PC.

7. The radiation resistance evaluation circuit of GaN HEMT device suitable for aerospace solid-state power control according to claim 6, characterized in that: The data online control and monitoring unit synthesizes the array into data packets and stores them in real time in the following format: Among them, the output processing calculation is as follows: I DS =Vo_IDS / (K1*R1) V GS =Vo_Vgs / K2 V DS =Vo_VDS / K3 I GS =Vo_Ig / (K4*R2) R DSON =V DS / I DS In the formula, K1~K4 are constants; R DSON is the on-resistance of the GaN HEMT device.

8. The radiation resistance evaluation circuit of a GaN HEMT device suitable for aerospace solid-state power control according to claim 6, characterized in that: The data sampling and storage cycle of the data online control and monitoring unit is in the order of microseconds; the timing of uploading the data of the data online control and monitoring unit to the host computer is the following two ways: 1) The host computer actively issues a data reading instruction, and the data online control and monitoring unit uploads the stored data packet; 2) The data storage limit of the online control and monitoring unit is reached, and the data online control and monitoring unit uploads the stored data packets.

9. A GaN HEMT device radiation resistance evaluation and analysis method implemented by a GaN HEMT device radiation resistance evaluation circuit suitable for aerospace solid-state power control according to any one of claims 1 to 8, characterized in that include: 1) Place the GaN HEMT device on a three-dimensional mobile platform, and set the LET ions to be incident at an angle θ(i). When the number of incident ions reaches 10 7 ions / cm 2 When analyzing the total dose effect, the influence of the total dose effect is considered; the data under different test conditions are recorded in real time before, during and after the test, and fitted into curves. According to the working conditions and corresponding data, the GaN HEMT transfer curve, output characteristic curve, leakage characteristic curve and CV characteristic curve are extracted; 2) When V DS When the voltage starts to drop from the DC power supply output voltage value or suddenly becomes 0, the output current I DS If it increases sharply, it indicates that the single particle burnout function of the device fails, and the test is terminated; after the single particle burnout failure occurs, the power is cut off and restarted, and the GaNHEMT function is abnormal; 3) When the VGS voltage suddenly becomes 0 or an abnormal value, the VDS voltage drops or the output current ID increases sharply, indicating that the device has a single-particle gate failure, and the test is terminated; after a single-particle gate failure occurs, the power is turned off and restarted, and the GaN HEMT function is abnormal; 4) After ion irradiation with a certain LET value, if no single particle burnout failure is found, it is determined that the device's single particle burnout failure threshold is greater than the LET value; otherwise, it is determined to be lower than the LET value.

Images