Method, device, equipment, medium and product for repairing defective layout

By obtaining and evaluating the repair evaluation values ​​of the first and second defect areas in the mask design layout and optimizing the position of the second defect area, the problem of inaccurate repair of defective layouts in the existing technology is solved, and an efficient repair effect without new defect points is achieved.

CN119575751BActive Publication Date: 2025-10-03SHENZHEN JINGYUAN INFORMATION TECH CO LTD
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Patent Information

Application Number
CN202411616372.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-11-12
Publication Date
2025-10-03
Estimated Expiration
2044-11-12

AI Technical Summary

Technical Problem

The selection of defective layout in the existing method is not accurate enough, which leads to the generation of new defect points around the repaired defective layout, resulting in poor repair effect of the mask design layout.

Method used

By obtaining the first defect area and the second defect area in the mask design layout, their corresponding repair evaluation values ​​are determined. These evaluation values ​​are used to accurately judge whether the repair result is consistent with the surrounding environment, and the second defect area is moved through the optimization strategy to avoid the generation of new defect points after repair.

Benefits of technology

Accurately locate the target defective layout that meets the requirements, avoid the generation of new defect points around the repaired defective layout, and improve the repair effect of the mask design layout.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application discloses a method, apparatus, device, medium, and product for repairing a defective layout, relating to the field of semiconductor integrated circuit technology. The method for repairing a defective layout comprises: obtaining a first defective region and a second defective region in a mask design layout, wherein the first defective region includes the second defective region; determining a first repair evaluation value for the first defective region and a second repair evaluation value for the second defective region based on the first defective region and the second defective region, wherein the first repair evaluation value is used to characterize the degree of graphic deviation of the first defective region caused by repairing the second defective region, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defective region caused by repairing the second defective region; moving the second defective region based on the first repair evaluation value and the second repair evaluation value to obtain a target defective layout; and repairing the target defective layout in the mask design layout to obtain a repaired mask layout.
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Description

Technical Field

[0001] The present application belongs to the field of semiconductor integrated circuit technology, and in particular relates to a method, device, equipment, medium and product for repairing a defective layout. Background Art

[0002] During the semiconductor integrated circuit manufacturing process, the pattern on the mask is projected onto the photoresist through an exposure system. However, due to imperfections in the optical system and diffraction effects, the pattern on the photoresist and the pattern on the mask are not completely consistent. In this case, the pattern defects on the mask need to be corrected.

[0003] In the existing method, a defect point in the mask design layout is first obtained, and then a defective layout is obtained from the mask design layout at the defect point position according to a preset size, and the defective layout is repaired using the optical proximity effect.

[0004] However, the selection of defective layouts in existing methods is not accurate enough, which can easily lead to new defect points around the repaired defective layout, resulting in poor repair effect of the mask design layout. Summary of the Invention

[0005] The embodiments of the present application provide a method, device, equipment, medium and product for repairing a defective layout, which can improve the repair effect of the mask design layout.

[0006] In one aspect of an embodiment of the present application, a method for repairing a defective layout is provided, comprising:

[0007] Acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region;

[0008] Determining, based on the first defect region and the second defect region, a first repair evaluation value for the first defect region and a second repair evaluation value for the second defect region, the first repair evaluation value being used to characterize a degree of pattern shift in the first defect region caused by repairing the second defect region, and the second repair evaluation value being used to characterize a degree of pattern shift in the second defect region caused by repairing the second defect region;

[0009] Moving the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout;

[0010] The target defective layout in the mask design layout is repaired to obtain a repaired mask layout.

[0011] In one aspect of an embodiment of the present application, a device for repairing a defective layout is provided, comprising:

[0012] A region acquisition module, configured to acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region;

[0013] an evaluation value determination module, configured to determine, based on the first defect area and the second defect area, a first repair evaluation value for the first defect area and a second repair evaluation value for the second defect area, wherein the first repair evaluation value is used to represent a degree of pattern shift in the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to represent a degree of pattern shift in the second defect area caused by repairing the second defect area;

[0014] an area moving module, configured to move the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout;

[0015] The layout repair module is used to repair the target defective layout in the mask design layout to obtain a repaired mask layout.

[0016] In one aspect of an embodiment of the present application, an electronic device is provided, which includes: a memory and a program or instruction stored in the memory and executable on a processor, wherein when the program or instruction is executed by the processor, a method for repairing a defective layout as provided in any one aspect of the above-mentioned embodiment of the present application is implemented.

[0017] In one aspect of an embodiment of the present application, a readable storage medium is provided, on which a program or instruction is stored. When the program or instruction is executed by a processor, a method for repairing a defective layout as provided in any aspect of the above-mentioned embodiment of the present application is implemented.

[0018] In one aspect of an embodiment of the present application, a computer program product is provided. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes a defective layout repair method as provided in any aspect of the above-mentioned embodiment of the present application.

[0019] In the defective layout repair method provided in the embodiment of the present application, a first defective area and a second defective area in the mask design layout are obtained. Then, based on the first repair evaluation value of the first defective area and the second repair evaluation value of the second defective area, it is possible to determine the degree of graphic offset of the first defective area caused by repairing the second defective area and the degree of graphic offset of the second defective area caused by repairing the second defective area, thereby accurately judging whether the repair result can be consistent with the surrounding environment. At the same time, based on the first repair evaluation value, the degree of graphic offset of the first defective area caused by repairing the second defective area is determined, and it is possible to determine whether repairing the second defective area will cause new defect points to be generated in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defective area is moved, thereby accurately locating the target defective layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defective layout, thereby improving the repair effect of the mask design layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0021] Figure 1 This is a flow chart of a method for repairing a defective layout provided by an embodiment of the present application;

[0022] Figure 2 This is a schematic diagram of a defect background layout provided by an embodiment of the present application;

[0023] Figure 3 This is a schematic structural diagram of a defective layout repair device provided by an embodiment of the present application;

[0024] Figure 4 This is a structural diagram of a defective layout repair device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0025] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present application by illustrating the examples of the present application.

[0026] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, the elements defined by the phrase "comprising..." do not exclude the presence of other identical elements in the process, method, article, or device comprising the elements.

[0027] It should be noted that the acquisition, storage, use, and processing of data in the technical solution of this application comply with the relevant provisions of national laws and regulations.

[0028] It should be noted that in the embodiments of the present application, certain software, components, models and other existing solutions in the industry may be mentioned. They should be regarded as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of the present application, but it does not mean that the applicant has or will necessarily use the solution.

[0029] In existing methods, a defect point in the mask design layout is first obtained. Then, a defect pattern is extracted from the mask design layout at the defect point location according to a preset size. The defect pattern is then repaired using the optical proximity effect. However, the selection of the defect pattern in existing methods is not precise enough, which can easily lead to new defects around the repaired defective pattern, resulting in poor mask design repair results.

[0030] The purpose of the present application is to provide a method, device, equipment, medium and product for repairing a defective layout. In the method for repairing a defective layout provided in the embodiment of the present application, a first defective area and a second defective area in the mask design layout are obtained. Then, based on the first repair evaluation value of the first defective area and the second repair evaluation value of the second defective area, it is possible to determine the degree of graphic deviation of the first defective area caused by repairing the second defective area and the degree of graphic deviation of the second defective area caused by repairing the second defective area, thereby accurately judging whether the repair result can be consistent with the surrounding environment. At the same time, based on the first repair evaluation value, the degree of graphic deviation of the first defective area caused by repairing the second defective area is determined, and it is possible to determine whether repairing the second defective area will cause new defect points to be generated in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defective area is moved, thereby accurately locating the target defective layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defective layout, thereby improving the repair effect of the mask design layout.

[0031] The following describes specific embodiments of the defective layout repair method, device, equipment, medium and product provided by the embodiments of the present application.

[0032] Figure 1 A flowchart of a method for repairing a defective layout is provided. The method for repairing a defective layout can be applied to a server and can include the following steps S101 to S104.

[0033] S101 , obtaining a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region.

[0034] In this embodiment, the first defect region and the second defect region are used to represent the region where the defect point is located, that is, the defect point is located in the first defect region and the second defect region. The area of ​​the first defect region is larger than the area of ​​the second defect region, and the first defect region completely includes the second defect region.

[0035] As an example, the server performs an optical proximity effect check on the mask layout to obtain a defect point in the mask layout. Based on the location of the defect point, the server then divides the mask layout into a first defect region and a second defect region, so that the first defect region and the second defect region overlap the defect point location, and the first defect region includes the second defect region.

[0036] S102, based on the first defect area and the second defect area, determine a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area, the first repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defect area caused by repairing the second defect area.

[0037] In this embodiment, the second defect area is an area that participates in the repair of the defect point, and the area that does not overlap between the first defect area and the second defect area is an area that does not participate in the repair of the defect point.

[0038] The first repair evaluation value is used to represent the degree of deviation of the pattern in the first defect area caused by repairing the second defect area. Specifically, the first repair evaluation value can be the deviation amount or shape distortion of the pattern in the first defect area.

[0039] The second repair evaluation value is used to represent the degree of deviation of the pattern in the second defect area caused by repairing the second defect area. Specifically, the second repair evaluation value can be the pattern deviation or pattern distortion in the second defect area.

[0040] As an example, after obtaining the first defect area and the second defect area in the mask design layout, the server performs simulation repair on the layout corresponding to the second defect area, thereby obtaining a layout repair result after simulation repair.

[0041] Then, the layout repair results after simulation repair are compared with the original layouts corresponding to the first defect area and the second defect area respectively, and the graphic distortion of the first defect area and the graphic distortion of the second defect area are evaluated to obtain the first repair evaluation value and the second repair evaluation value.

[0042] S103 , moving the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout.

[0043] In this embodiment, the target defect layout is used to characterize the local layout that needs to repair defect points in the final mask design layout.

[0044] As an example, the server develops an optimization strategy based on the first and second repair evaluation values. Specifically, this optimization strategy aims to find a balance point, that is, to minimize the image offset of the second defect area while also minimizing the impact on the first defect area.

[0045] Then, according to the optimization strategy, the second defect area is slightly moved or deformed to obtain a reasonable defect area that can minimize the first repair evaluation value and the second repair evaluation value, and the layout corresponding to the reasonable defect area is determined as the target defect layout.

[0046] S104, repairing the target defective layout in the mask design layout to obtain a repaired mask layout.

[0047] In this embodiment, the repaired mask layout is used to represent the mask design layout after defective points are repaired.

[0048] As an example, the server adopts a preset repair strategy (such as line repair, line deletion, and size adjustment, etc.) to repair the target defect layout in the mask design layout, thereby obtaining a repaired mask layout.

[0049] At the same time, after the repair is completed, the server needs to verify the repaired mask design layout to ensure that all defects have been properly addressed and no new defects have been introduced. If the verification passes, the final repaired mask layout can be obtained.

[0050] In the defect layout repair method provided in this embodiment, a first defect area and a second defect area in the mask design layout are obtained. Then, based on the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area, it is possible to determine the degree of graphic offset of the first defect area caused by repairing the second defect area and the degree of graphic offset of the second defect area caused by repairing the second defect area, thereby accurately judging whether the repair result can be consistent with the surrounding environment. At the same time, based on the first repair evaluation value, the degree of graphic offset of the first defect area caused by repairing the second defect area is determined, and it is possible to determine whether repairing the second defect area will cause new defect points to be generated in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defect area is moved, thereby accurately locating the target defect layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defect layout, thereby improving the repair effect of the mask design layout.

[0051] As an optional embodiment, S101 may specifically include:

[0052] Taking the defect point position in the mask design layout as the center, extending outward by a first preset size to obtain a first defect area;

[0053] Taking the defect point position in the mask design layout as the center, a second preset size is extended outward to obtain a second defect area, and the second preset size is smaller than the first preset size.

[0054] In this embodiment, the second preset size is used to represent a size length set according to experimental data or industry standards that can ensure that the defect point can be effectively identified and repaired, which is used to construct the second defect area.

[0055] The first preset size is used to characterize the size length set according to experimental data or industry standards, which can ensure that the defect point is effectively identified and repaired, while accurately identifying whether unnecessary interference is caused to the surrounding area. It is used to construct the first defect area.

[0056] As an example, the server takes the defect point position in the mask design layout as the center and extends outward according to a first preset size (eg, 0.5um x 0.5um) to obtain a slightly larger circular area or rectangular area as the first defect area.

[0057] At the same time, with the defect point position in the mask design layout as the center, a smaller circular area or rectangular area is extended outward according to a second preset size (for example, 0.2um×0.2um) to obtain a second defect area.

[0058] This embodiment uses the defect point location in the mask design layout as the center, extending outward by a first preset size and a second preset size, respectively, to construct a first defect region and a second defect region. This facilitates subsequent accurate determination, based on the first and second defect regions, of whether repairing the second defect region will result in the creation of new defects in the surrounding area. This prevents the creation of new defects around the repaired defective layout, improving the effectiveness of mask design layout repair.

[0059] As an optional embodiment, S102 may specifically include:

[0060] obtaining a first evaluation point in the first defect area and a second evaluation point in the second defect area;

[0061] Determining, based on the first defect region and the second defect region, a first offset value of each first evaluation point and a second offset value of each second evaluation point after performing simulation repair on the second defect region;

[0062] A first restoration evaluation value is determined according to the first offset value of each first evaluation point, and a second restoration evaluation value is determined according to the second offset value of each second evaluation point.

[0063] In this embodiment, the first evaluation point is a position point in the first defect area that can reflect the characteristics of the first defect area, and the second evaluation point is a position point in the second defect area that can reflect the characteristics of the second defect area.

[0064] The first offset value is used to represent the change in position of the first evaluation point before and after the defect point is repaired, and the second offset value is used to represent the change in position of the second evaluation point before and after the defect point is repaired.

[0065] As an example, the server sets a plurality of first evaluation points and a plurality of second evaluation points in the first defect area and the second defect area in the mask design layout according to a preset sampling strategy. Specifically, the preset sampling strategy may be to set one evaluation point at a preset distance.

[0066] Then, a simulated repair of the second defective area is performed using simulation software (e.g., finite element analysis software, physical simulation software, etc.). The simulated repair process may include steps such as filling material, adjusting shape, and optimizing structure to simulate the actual repair process. After the simulated repair, the first offset value of each first evaluation point and the second offset value of each second evaluation point are calculated.

[0067] Finally, a first restoration evaluation value is calculated based on the first offset value of each first evaluation point, and a second restoration evaluation value is calculated based on the second offset value of each second evaluation point. The first restoration evaluation value and the second restoration evaluation value form a comprehensive indicator that can be represented by the cumulative value, average value, or standard deviation of the offsets.

[0068] This embodiment utilizes the steps of obtaining evaluation points, determining offset values, and calculating repair evaluation values ​​to accurately determine a first repair evaluation value for a first defective region and a second repair evaluation value for a second defective region. This helps accurately determine, based on the first and second repair evaluation values, whether repairing the second defective region will result in the creation of new defects in the surrounding area. This prevents the creation of new defects around the repaired defective layout, improving the repair effect of the mask design layout.

[0069] As an optional embodiment, determining, based on the first defect area and the second defect area, the first offset value of each first evaluation point and the second offset value of each second evaluation point after the second defect area is simulated and repaired may specifically include:

[0070] Performing simulation repair on the second defective area to obtain a first simulation repaired area corresponding to the first defective area and a second simulation repaired area corresponding to the second defective area;

[0071] Comparing the first defect area with the first simulated repair area to obtain a first offset value of each first evaluation point in the first defect area;

[0072] The second defect area is compared with the second simulated repair area to obtain a second offset value of each second evaluation point in the second defect area.

[0073] In this embodiment, the first simulated repair region is used to represent a region corresponding to the first defect region after the second defect region is simulated repaired.

[0074] The second simulated repair region is used to represent a region corresponding to the second defect region after the second defect region is simulated repaired.

[0075] As an example, the server accurately simulates the position and shape of the first defect area and the second defect area in the simulation model, and then performs a repair operation on the second defect area in the simulation model. After the simulated repair of the second defect area, a first simulated repair area corresponding to the first defect area and a second simulated repair area corresponding to the second defect area are obtained.

[0076] Then, the first defect area is compared with the first simulated repair area, and the position changes of each first evaluation point before and after the repair are compared to obtain the first offset value of each first evaluation point in the first defect area. The second defect area is compared with the second simulated repair area, and the second offset value of each second evaluation point in the second defect area is similarly calculated. The offset value can be calculated by measuring the coordinate difference of the evaluation point before and after the repair.

[0077] Through this embodiment, by performing simulated repair on the second defect area, a first simulated repair area and a second simulated repair area are obtained. Thus, the first offset value of the first evaluation point and the second offset value of the second evaluation point can be accurately calculated based on the first simulated repair area and the second simulated repair area. This facilitates the subsequent accurate calculation of the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area based on the first offset value and the second offset value.

[0078] As an optional embodiment, S103 may specifically include:

[0079] Moving the second defect area multiple times to obtain multiple candidate defect areas;

[0080] For each candidate defect area, determining a first update and repair evaluation value and a second update and repair evaluation value corresponding to each candidate defect area;

[0081] A target defect layout in the mask design layout is determined according to the candidate defect regions corresponding to the minimum first update and repair evaluation values ​​and the minimum second update and repair evaluation values.

[0082] In this embodiment, the candidate defect region is used to represent the region corresponding to the second defect region after it is moved.

[0083] The first update repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the candidate defect area; the second update repair evaluation value is used to characterize the degree of graphic deviation of the candidate defect area caused by repairing the candidate defect area obtained after moving the second defect area.

[0084] As an example, the server generates multiple different candidate defect regions by making slight position adjustments or shape changes to the second defect region, wherein these adjustments can be made based on preset rules, random search, or optimization algorithms.

[0085] Then, for each candidate defect area, the first updated repair evaluation value of the first defect area and the second updated repair evaluation value of the candidate defect area are determined after the defect point of the candidate defect area is repaired according to the same calculation method as the first repair evaluation value and the second repair evaluation value mentioned above.

[0086] Finally, among all candidate defect regions, the target candidate defect region that satisfies both the minimum first update repair evaluation value and the minimum second update repair evaluation value is found, and the layout corresponding to the target candidate defect region in the mask design layout is determined as the target defect layout. This means that repairing the defect point in the target defect layout can avoid the generation of new defects in the surrounding area.

[0087] Through this embodiment, the second defect region is moved multiple times to obtain multiple candidate defect regions. Among the candidate defect regions, the layout corresponding to the candidate defect region with the smallest first update repair evaluation value and the smallest second update repair evaluation value is selected as the target defect layout. This can avoid the generation of new defects around the repaired defect layout and improve the repair effect of the mask design layout.

[0088] As an optional embodiment, before S101, the method for repairing the defective layout may further include:

[0089] Taking the defect point position in the mask design layout as the center, extending outward by a third preset size to obtain a defect background area;

[0090] Segmenting a defect background layout corresponding to the defect background area from the mask design layout;

[0091] S101 may specifically include:

[0092] A first defect area and a second defect area in the defect background map are obtained.

[0093] In this embodiment, the third preset size is larger than the first preset size, and the first preset size is larger than the second preset size.

[0094] The defect background pattern includes a first defect area, and the first defect area completely includes a second defect area.

[0095] As an example, Figure 2 As shown, a schematic diagram of a defect background layout is provided. Specifically, the server takes the defect point position 204 in the mask design layout as the center and extends outward according to a third preset size (e.g., 5um*5um) to obtain a larger rectangular area as the defect background area.

[0096] Then, a defect background layout 201 corresponding to the defect background area in the mask design layout is determined and segmented from the mask design layout. Simultaneously, in the defect background layout 201, a first defect area 202 is determined according to a first preset size, and a second defect area 203 is determined according to a second preset size.

[0097] Through this embodiment, a defect background layout with a larger range including the defect point position is obtained in the mask design layout as an environment for repairing the defect point, which can ensure that the result of merging back to the original mask design layout after the defect point is repaired is in line with expectations, and avoid the phenomenon that the result of merging back to the original mask design layout after the defect point is repaired is not in line with expectations.

[0098] As an optional embodiment, S104 may specifically include:

[0099] Repairing the target defect pattern in the defect background pattern through the optical proximity effect to obtain a repaired defect background pattern;

[0100] The repaired defect background layout is merged with the mask design layout to obtain the repaired mask layout.

[0101] In this embodiment, after determining the target defect pattern within the defect background pattern, the server uses optical proximity effect correction technology to repair the target defect. The optical proximity effect correction technology includes methods such as minimizing line width change, reducing line end shortening, and correcting corners.

[0102] Specifically, the line width change minimization method corrects the proximity effect and nonlinear distortion by adjusting the line width of the graphics; the line end shortening reduction method reduces line end shortening by extending the line end and adding truncation-type or hammerhead-type correction graphics; the square corner correction method reduces the rounding phenomenon of square corners by performing compensatory truncation-type correction on the square corner area.

[0103] Then, after the target defect layout is repaired, the repaired defect background layout is spliced ​​back to the original mask design layout to obtain the repaired mask layout, thereby ensuring that the repaired pattern can be accurately copied to the chip.

[0104] Through this embodiment, the target defect in the defect background layout is repaired by utilizing the method of optical proximity effect repair and mask design layout fusion, thereby generating a repair mask layout that meets the design requirements and improving the repair effect of the mask design layout.

[0105] As an optional embodiment, after S104, the method for repairing the defective layout may further include:

[0106] Performing lithography rule checking on the repaired mask layout to obtain rule checking results;

[0107] When the rule check result indicates that the repair mask layout complies with the preset photolithography rules, the repair mask layout is determined as the target mask layout for preparing the mask.

[0108] In this embodiment, the server defines a series of lithography rules based on lithography process requirements and semiconductor manufacturing standards. After obtaining the repair mask layout, the server uses lithography rule checking software to scan and analyze the repair mask layout. The lithography rule checking software checks each graphic element in the repair mask layout according to the predefined lithography rules and generates rule checking results.

[0109] If the rule check results indicate that the repaired mask layout complies with the preset lithography rules, it can be considered that the layout has met the requirements of the lithography process. At this point, the repaired mask layout is determined as the target mask layout for mask preparation. This step marks the end of the lithography rule check process and provides a reliable basis for subsequent mask preparation and chip manufacturing.

[0110] Through this embodiment, the repair mask layout is subjected to a lithography rule check, thereby ensuring that the repair mask layout meets the requirements of the lithography process, and thus determining the repair mask layout as the target mask layout for mask preparation. In this way, further lithography rule checking of the repair mask layout can improve the reliability of chip manufacturing.

[0111] A repair method based on a defective layout. Accordingly, the present application also provides a specific embodiment of a repair device for a defective layout.

[0112] like Figure 3 As shown, the defective layout repairing device 300 provided in the embodiment of the present application includes a region acquisition module 310 , an evaluation value determination module 320 , a region movement module 330 and a layout repairing module 340 .

[0113] The region acquisition module 310 is configured to acquire a first defect region and a second defect region in the mask design layout, where the first defect region includes the second defect region.

[0114] The evaluation value determination module 320 is used to determine a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area based on the first defect area and the second defect area. The first repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defect area caused by repairing the second defect area.

[0115] The region moving module 330 is configured to move the second defect region according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout.

[0116] The layout repair module 340 is used to repair the target defective layout in the mask design layout to obtain a repaired mask layout.

[0117] As an optional embodiment, the region acquisition module 310 specifically includes the following units:

[0118] An area acquisition unit is configured to extend a first preset size outward from a defect point position in the mask design layout as a center to obtain a first defect area;

[0119] The area acquisition unit is used to extend a second preset size outward with the defect point position in the mask design layout as the center to obtain a second defect area, and the second preset size is smaller than the first preset size.

[0120] As an optional embodiment, the evaluation value determination module 320 specifically includes the following units:

[0121] An evaluation point acquisition unit, configured to acquire a first evaluation point in the first defect area and a second evaluation point in the second defect area;

[0122] an offset value determining unit, configured to determine, based on the first defect region and the second defect region, a first offset value of each first evaluation point and a second offset value of each second evaluation point after the second defect region is simulated and repaired;

[0123] The first evaluation value determining unit is configured to determine a first restoration evaluation value according to a first offset value of each first evaluation point, and to determine a second restoration evaluation value according to a second offset value of each second evaluation point.

[0124] As an optional embodiment, the offset value determining unit is specifically configured to:

[0125] Performing simulation repair on the second defective area to obtain a first simulation repaired area corresponding to the first defective area and a second simulation repaired area corresponding to the second defective area;

[0126] Comparing the first defect area with the first simulated repair area to obtain a first offset value of each first evaluation point in the first defect area;

[0127] The second defect area is compared with the second simulated repair area to obtain a second offset value of each second evaluation point in the second defect area.

[0128] As an optional embodiment, the area movement module 330 specifically includes the following units:

[0129] an area moving unit, configured to move the second defect area multiple times to obtain multiple candidate defect areas;

[0130] a second evaluation value determining unit, configured to determine, for each candidate defect region, a first update and repair evaluation value and a second update and repair evaluation value corresponding to each candidate defect region;

[0131] The layout determination unit is used to determine the target defect layout in the mask design layout according to the candidate defect area corresponding to the minimum first update repair evaluation value and the minimum second update repair evaluation value.

[0132] As an optional embodiment, before obtaining the first defective region and the second defective region in the mask design layout, the defective layout repairing device 300 further includes the following modules:

[0133] A background determination module is configured to extend a third preset size outward from the defect point position in the mask design layout as the center to obtain a defect background area;

[0134] A layout segmentation module is used to segment the defect background layout corresponding to the defect background area from the mask design layout;

[0135] The region acquisition module 310 is specifically configured to:

[0136] A first defect area and a second defect area in the defect background map are obtained.

[0137] As an optional embodiment, the layout repair module 340 specifically includes the following units:

[0138] A layout repair unit, configured to repair a target defective layout in the defective background layout by using an optical proximity effect to obtain a repaired defective background layout;

[0139] The layout fusion unit is used to fuse the repaired defect background layout with the mask design layout to obtain a repaired mask layout.

[0140] As an optional embodiment, after repairing the target defective layout in the mask design layout to obtain the repaired mask layout, the defective layout repairing device 300 further includes the following modules:

[0141] A rule detection module is used to perform lithography rule checking on the repair mask layout and obtain rule checking results;

[0142] The layout determination module is used to determine the repair mask layout as the target mask layout for preparing the mask when the rule check result indicates that the repair mask layout meets the preset lithography rules.

[0143] A repair method based on a defective layout. Accordingly, the present application also provides a specific embodiment of a repair device for a defective layout.

[0144] Figure 4 A schematic diagram of the hardware structure of a defective layout repair device provided in an embodiment of the present application is shown.

[0145] The defective layout repairing device may include a processor 401 and a memory 402 storing computer program instructions.

[0146] Specifically, the processor 401 may include a central processing unit (CPU), or an application-specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0147] Memory 402 may include a large capacity memory for data or instructions. By way of example and not limitation, memory 402 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. Where appropriate, memory 402 may include removable or non-removable (or fixed) media. Where appropriate, memory 402 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, memory 402 is a non-volatile solid-state memory.

[0148] The processor 401 reads and executes the computer program instructions stored in the memory 402 to implement any one of the defective layout repair methods in the above embodiments.

[0149] In one example, the defective layout repair device may further include a communication interface 403 and a bus 410. Figure 4 As shown, the processor 401 , the memory 402 , and the communication interface 403 are connected via a bus 410 and communicate with each other.

[0150] The communication interface 403 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0151] Bus 410 includes hardware, software or both, couples the parts of the repair equipment of defect layout to each other.For example, and not limitation, bus may include accelerated graphics port (AGP) or other graphics bus, enhanced industry standard architecture (EISA) bus, front side bus (FSB), hypertransport (HT) interconnection, industry standard architecture (ISA) bus, infinite bandwidth interconnection, low pin count (LPC) bus, memory bus, micro channel architecture (MCA) bus, peripheral component interconnection (PCI) bus, PCI-Express (PCI-X) bus, serial advanced technology attachment (SATA) bus, video electronics standard association local (VLB) bus or other suitable bus or two or more of these combinations. In appropriate cases, bus 410 may include one or more buses. Although the present application embodiment describes and shows specific bus, the application considers any suitable bus or interconnection.

[0152] In addition, in conjunction with the defective layout repair method in the above embodiments, the present application embodiment can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when the computer program instructions are executed by a processor, any of the defective layout repair methods in the above embodiments is implemented.

[0153] In addition, in combination with the defective layout repair method in the above-mentioned embodiment, the embodiment of the present application can provide a computer program product for implementation. When the instructions in the computer program product are executed by the processor of an electronic device, the electronic device executes the defective layout repair method provided in any aspect of the above-mentioned embodiment of the present application.

[0154] It should be understood that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, a detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated. Those skilled in the art can make various changes, modifications, and additions, or change the order of the steps after understanding the spirit of the present application.

[0155] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware or a combination thereof. When implemented in hardware, they can be, for example, electronic circuits, application specific integrated circuits (ASICs), appropriate firmware, plug-ins, function cards, etc. When implemented in software, the elements of the present application are programs or code segments that are used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link by a data signal carried in a carrier wave. "Machine-readable medium" can include any medium that can store or transmit information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROMs, flash memories, erasable ROMs (EROMs), floppy disks, CD-ROMs, optical disks, hard disks, optical fiber media, radio frequency (RF) links, etc. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0156] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps. In other words, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

[0157] Aspects of the present disclosure have been described above with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor or a field programmable logic circuit. It is also understood that each box in the block diagram and / or flowchart and the combination of the boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs the specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0158] The above description is only a specific embodiment of the present application. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the scope of protection of the present application.

Claims

1. A method for repairing a defective layout, characterized in that: include: Acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region; determining, based on the first defect region and the second defect region, a first repair evaluation value for the first defect region and a second repair evaluation value for the second defect region, wherein the first repair evaluation value is used to represent a degree of pattern shift in the first defect region caused by repairing the second defect region, and the second repair evaluation value is used to represent a degree of pattern shift in the second defect region caused by repairing the second defect region; moving the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout; The target defective layout in the mask design layout is repaired to obtain a repaired mask layout.

2. The method according to claim 1, characterized in that The obtaining of the first defective region and the second defective region in the mask design layout includes: Taking the defect point position in the mask design layout as the center, extending outward by a first preset size to obtain the first defect area; Taking the defect point position in the mask design layout as the center, a second preset size is extended outward to obtain the second defect area, and the second preset size is smaller than the first preset size.

3. The method according to claim 1, characterized in that The determining, based on the first defect area and the second defect area, a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area includes: Obtaining a first evaluation point in the first defect area and a second evaluation point in the second defect area; determining, based on the first defect region and the second defect region, a first offset value of each of the first evaluation points and a second offset value of each of the second evaluation points after performing simulated repair on the second defect region; The first restoration evaluation value is determined according to the first offset value of each of the first evaluation points, and the second restoration evaluation value is determined according to the second offset value of each of the second evaluation points.

4. The method according to claim 3, characterized in that The determining, based on the first defect area and the second defect area, a first offset value of each of the first evaluation points and a second offset value of each of the second evaluation points after the second defect area is simulated and repaired, includes: Performing simulation repair on the second defective area to obtain a first simulation repaired area corresponding to the first defective area and a second simulation repaired area corresponding to the second defective area; Comparing the first defect area with the first simulated repair area to obtain a first offset value of each of the first evaluation points in the first defect area; The second defect area is compared with the second simulated repair area to obtain a second offset value of each second evaluation point in the second defect area.

5. The method according to claim 1, wherein The step of moving the second defect region according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout includes: Moving the second defect area multiple times to obtain multiple candidate defect areas; For each of the candidate defect areas, respectively determine a first update and repair evaluation value and a second update and repair evaluation value corresponding to each of the candidate defect areas; A target defect layout in the mask design layout is determined according to the candidate defect area corresponding to the minimum first update and repair evaluation value and the minimum second update and repair evaluation value.

6. The method according to any one of claims 1 to 5, characterized in that Before obtaining the first defective region and the second defective region in the mask design layout, the method further includes: Taking the defect point position in the mask design layout as the center, extending outward by a third preset size to obtain a defect background area; Segmenting a defect background layout corresponding to the defect background area from the mask design layout; The obtaining of the first defective region and the second defective region in the mask design layout includes: A first defect area and a second defect area in the defect background map are obtained.

7. The method according to claim 6, characterized in that The step of repairing the target defective layout in the mask design layout to obtain a repaired mask layout includes: repairing the target defect pattern in the defect background pattern through an optical proximity effect to obtain a repaired defect background pattern; The repaired defect background layout is merged with the mask design layout to obtain the repair mask layout.

8. The method according to any one of claims 1 to 5, characterized in that After repairing the target defective layout in the mask design layout to obtain a repaired mask layout, the method further includes: Performing a lithography rule check on the repair mask layout to obtain a rule check result; In a case where the rule check result indicates that the repair mask layout complies with a preset photolithography rule, the repair mask layout is determined as a target mask layout for preparing a mask.

9. An electronic device, characterized in that: The device includes: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the method for repairing a defective layout according to any one of claims 1 to 8 is implemented.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the defective layout repair method according to any one of claims 1 to 8 is implemented.

11. A computer program product, characterized in that When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes the defective layout repair method according to any one of claims 1 to 8.

Citation Information

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