A wavelength tunable electro-absorption modulated laser and its preparation method

Abstract

The present invention discloses a wavelength tunable electro-absorption modulated laser and a preparation method thereof. The laser comprises: a substrate and a first modulator region, a first gain region, a grating region, a second gain region and a second modulator region arranged in sequence on the substrate and located in the same plane; the constituent materials of the first modulator region and the second modulator region are doped with phosphorus ions; the first gain region and the second gain region are used to excite lasers of multiple wavelengths under the action of different direct currents; the grating region is used to select modes for the multiple wavelengths; the first modulator region and the second modulator region are used as light output ends to emit tunable lasers to achieve double-end laser emission. The present invention integrates two electro-absorption modulators and a wavelength tunable laser back to back and shares a wavelength tuning region to double the bandwidth. The integration of three bandgap width materials is achieved through epitaxial growth of a primary active material and a primary passive material, which simplifies the manufacturing process and improves device performance.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic integrated devices, and in particular to a wavelength tunable electric absorption modulated laser and a preparation method thereof. Background Art

[0002] With the rapid development of optical communications, application scenarios such as long-distance transmission, fronthaul and backhaul networks, and data centers have put forward higher requirements on the bandwidth and wavelength stability of optical transmitter chips. Long-distance transmission is sensitive to signal attenuation and noise. In data centers and fronthaul and backhaul networks, optical transmitter chips need to support multi-channel parallel transmission and high-frequency wavelength adjustment, and must maintain wavelength stability during long-term operation. How to maintain high-bandwidth and high-stability optical transmission performance in these complex scenarios is one of the key challenges in the development of current optical communication technology.

[0003] In existing optical communication technologies, fixed wavelength lasers are usually used to transmit optical signals. This fixed wavelength design greatly limits the bandwidth utilization of the communication system. Optical communication systems usually need to transmit signals at multiple wavelengths simultaneously in order to increase the data transmission rate and the overall bandwidth of the system. Fixed wavelength lasers can only provide a single wavelength output and cannot flexibly adapt to multi-wavelength communication systems (such as wavelength division multiplexing technology), resulting in bandwidth waste and low communication efficiency. In addition, many lasers still use a single-end emission design, which makes the laser very inefficient in output optical power and emission efficiency. Especially in high-power applications, single-end emission may result in uneven energy distribution of the light beam, low fiber coupling efficiency, and increased overall energy loss of the system.

[0004] Therefore, it is necessary to propose a wavelength tunable electro-absorption modulated laser and a preparation method thereof, introduce quantum well hybridization technology in the preparation process of wavelength tunable laser and modulator integrated chip, and prepare a wavelength tunable, double-end-face emission, highly integrated wavelength tunable laser, providing a solution for improving the bandwidth of optical emission chips and reducing chip costs. Summary of the invention

[0005] In view of this, the present invention provides a wavelength tunable electro-absorption modulated laser and a preparation method thereof, so as to solve the shortcomings of bandwidth, wavelength stability and efficient integration of existing unidirectional emission optical chips, as well as the technical problems of complex process, multiple epitaxial growth and excessive energy loss of the overall system.

[0006] In order to achieve the above technical objectives, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a wavelength tunable electro-absorption modulated laser, comprising:

[0008] A substrate and a first modulator region, a first gain region, a grating region, a second gain region and a second modulator region arranged in sequence on the substrate and located in the same plane; the constituent materials of the first modulator region and the second modulator region are both doped with phosphorus ions;

[0009] The first gain region and the second gain region are used to excite lasers of multiple wavelengths under the action of different direct currents; the grating region is used to select the multiple wavelengths and output single wavelength lasers; the first modulator region and the second modulator region are used to narrow the bandgap width under the action of reverse voltage and emit tunable lasers as light output ends;

[0010] The first modulator region, the first gain region and the grating region constitute a first laser tuner; the second modulator region, the second gain region and the grating region constitute a second laser tuner; the first laser tuner and the second laser tuner realize double-end laser emission.

[0011] Furthermore, the materials of the first modulator region, the first gain region, the second gain region and the second modulator region are InGaAsP or InGaAlAs quantum well materials.

[0012] Furthermore, the material of the substrate is N-type indium phosphide.

[0013] On the other hand, the present invention provides a method for preparing a wavelength tunable electro-absorption modulated laser, which is used to prepare any wavelength tunable electro-absorption modulated laser described in the above technical solution, comprising:

[0014] An active layer is grown on a substrate; the layer where the active layer is located is divided into a first modulator region, a first gain region, a grating region, a second gain region and a second modulator region which are arranged in sequence;

[0015] A first mask layer of SiO2 is prepared on the surfaces of the first modulator region, the first gain region, the second gain region and the second modulator region, and an active layer material of the grating region is removed by etching technology;

[0016] InGaAsP passive layer material is grown in the grating region;

[0017] A second mask layer of SiO2 material is made in the first gain region, the grating region, and the second gain region, and a rapid thermal annealing is performed after phosphorus ion implantation in the first modulator region and the second modulator region using quantum well intermixing technology to achieve diffusion of vacancy defect concentration, induce mutual intermixing of components of quantum wells and barriers at the atomic interface, increase the energy level of the quantum well machine, achieve blue shift of the quantum well band gap wavelength, and obtain the modulator region material, so that the modulator region material and the InGaAsP passive layer body material are in the same plane;

[0018] The second mask layer and the first mask layer are removed by etching, so that the active materials of the first gain region and the second gain region are in the same plane as the modulator region material and the InGaAsP passive layer body material, and a grating is prepared on the surface of the InGaAsP passive layer body material;

[0019] Growing an InP cap layer and a contact layer on the overall surface consisting of the first modulator region, the first gain region, the grating region, the second gain region and the second modulator region, and fabricating a ridge waveguide structure;

[0020] Electrical isolation trenches are etched on the contact layer to achieve electrical isolation between the various regions.

[0021] Furthermore, the active layer includes, from bottom to top, a stacked InGaAsP lower waveguide layer, a multi-quantum well layer and an upper waveguide layer.

[0022] Furthermore, the fluorescence wavelength of the active layer is 1550 nm.

[0023] Furthermore, the method further comprises:

[0024] Making a P-side electrode on the contact layer after the electrical isolation groove etching is completed;

[0025] An N-side electrode is fabricated on a side of the substrate away from the active layer.

[0026] Furthermore, the growth of the active layer on the substrate is achieved by vapor deposition of organic metal compounds.

[0027] Furthermore, the method of preparing a first mask layer made of SiO2 on the surfaces of the first modulator region, the first gain region, the second gain region and the second modulator region is implemented by photolithography technology.

[0028] Furthermore, the light fluorescence wavelength of the InGaAsP passive layer material is 1450nm.

[0029] Compared with the prior art, the wavelength tunable electro-absorption modulated laser and the preparation method thereof provided by the present invention integrate two electro-absorption modulators and a wavelength tunable laser back to back, share a wavelength tuning region, and emit lasers from two end faces to achieve the effect of doubling the bandwidth, which can save chip costs and provide a good solution for improving the bandwidth of light emitting chips.

[0030] The integration of three kinds of bandgap width materials is realized by epitaxial growth of active materials and passive materials. By adopting quantum well hybrid technology in the modulator area, the quantum well energy level is increased, and then the bandgap wavelength of the modulator is adjusted to obtain the blue shift of the wavelength. This design enables the laser to adjust the emission wavelength of the laser under the action of reverse voltage, realize the red shift absorption of the wavelength, and improve the flexibility of wavelength adjustment. In the whole preparation process, advanced processes such as MOCVD growth technology, lithography, etching, and rapid thermal annealing are used to ensure the precise control of materials and structures, and high-quality devices can be obtained. At the same time, through the process of mask pattern and corrosion removal, high-precision grating production is ensured, and the device performance is further improved. The laser and its preparation method provided by the present invention not only improve the efficiency, stability and tuning performance of the laser, but also enhance the reliability and long-term use performance of the device by optimizing the structural design, material selection and processing technology, and have good application potential and market prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of the structure of the substrate and active layer provided by the present invention;

[0032] Figure 2 A schematic diagram of the partition structure of the active layer is provided for the present invention;

[0033] Figure 3 A schematic diagram of the partitioned preparation of SiO2 mask patterns provided by the present invention;

[0034] Figure 4 A schematic diagram of the internal structure of the laser prepared by the present invention;

[0035] Figure 5 A schematic diagram of the cross-sectional structure of the light-emitting end face of the laser provided by the present invention;

[0036] In the figure: 1-first modulator region, 2-first gain region, 3-grating region, 4-second gain region, 5-second modulator region, 11-substrate, 12-active layer, 13-InGaAsP passive layer body material, 14-second mask layer, 15-modulator material, 16-grating, 17-InP cap layer, 18-contact layer, 19-P surface electrode, 20-N surface electrode. DETAILED DESCRIPTION

[0037] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not used to limit the scope of the present invention.

[0038] The present invention provides a wavelength tunable electro-absorption modulated laser and a preparation method thereof, which are respectively described below.

[0039] A specific embodiment of the present invention discloses a wavelength tunable electro-absorption modulated laser, such as Figure 1 As shown, including:

[0040] A substrate 11 and a first modulator region 1, a first gain region 2, a grating region 3, a second gain region 4 and a second modulator region 5 arranged in sequence on the substrate 11 and located in the same plane; the constituent materials of the first modulator region 1 and the second modulator region 5 are both doped with phosphorus ions;

[0041] The first gain region 2 and the second gain region 4 are used to excite lasers of multiple wavelengths under the action of different direct currents; the grating region 3 is used to select the multiple wavelengths and output single wavelength lasers; the first modulator region 1 and the second modulator region 5 are used to narrow the bandgap width under the action of reverse voltage and emit tunable lasers as light output ends;

[0042] The first modulator region 1, the first gain region 2 and the grating region 3 form a first laser tuner; the second modulator region 5, the second gain region 4 and the grating region 3 form a second laser tuner; the first laser tuner and the second laser tuner realize double-ended laser emission.

[0043] The wavelength tunable electro-absorption modulated laser provided in this embodiment excites multiple lasers of different wavelengths by applying different DC voltages in the first gain region and the second gain region; this wavelength diversity can meet the needs of different wavelength channels and is the basis for the realization of multi-wavelength systems (such as wavelength division multiplexing). The grating region selects the multiple wavelengths generated to output a single wavelength laser. This design can ensure that the wavelength can be accurately tuned and stably output, avoiding communication problems caused by wavelength drift. Under the action of the reverse voltage, the first modulator region and the second modulator region narrow the bandgap width, realize the wavelength red shift to absorb the emitted laser, so that the modulation ability of the laser is enhanced, and can provide better modulation response under different working conditions, supporting higher transmission speed and modulation accuracy. The laser provided in this embodiment integrates two electro-absorption modulators back to back, shares a wavelength tuning region, and emits lasers from two end faces to achieve the effect of doubling the bandwidth, which can save chip costs and provide a good solution for improving the bandwidth of optical emission chips.

[0044] As a preferred embodiment, the materials of the first modulator region 1, the first gain region 2, the second gain region 4 and the second modulator region 5 are InGaAsP or InGaAlAs quantum well materials.

[0045] Using InGaAsP or InGaAlAs quantum well materials as the constituent materials of the modulator region and the gain region has adjustable bandgap, high photoelectric conversion efficiency, low threshold current and power consumption, good modulation response, enhanced optical nonlinear effect, high optical quality and stability, and compatibility with silicon photonics. It can improve the modulation depth and modulation efficiency, especially in high-power and long-term operation application scenarios that require large modulation depth and high contrast.

[0046] As a preferred embodiment, the material of the substrate 11 is N-type indium phosphide. Selecting N-type indium phosphide as the substrate material has the following advantages:

[0047] 1. Good lattice matching lays the foundation for improving material quality; 2. High conductivity reduces power consumption and improves carrier injection efficiency; 3. High electron mobility supports high-speed operation and is suitable for high-frequency optoelectronic devices; 4. Good thermal conductivity improves thermal management performance and enhances device stability; 5. Matching with the wavelength of optical fiber communication optimizes optical communication performance; 6. Mature manufacturing technology helps to reduce development costs and improve production efficiency.

[0048] like Figure 2-5 As shown, the present invention also provides a method for preparing a wavelength tunable electro-absorption modulated laser, which is used to prepare any wavelength tunable electro-absorption modulated laser described in the above technical solution, and the method comprises the following steps:

[0049] Step S1: First, select an N-type indium phosphide substrate 11, such as Figure 2 As shown, an InGaAsP lower waveguide layer, a multi-quantum well layer and an upper waveguide layer are sequentially grown on a substrate 11 by metal organic chemical vapor deposition (MOCVD), and the InGaAsP lower waveguide layer, the multi-quantum well layer and the upper waveguide layer constitute an active layer 12; wherein the light fluorescence wavelength of the constituent material of the active layer 12 is 1550nm.

[0050] Step S2: Figure 3 As shown, the active layer 12 is divided into a first modulator area 1, a first gain area 2, a grating area 3, a second gain area 4 and a second modulator area 5 which are arranged in sequence, and a 250nm thick SiO2 mask pattern, i.e., a first mask layer, is prepared on the surface of the first modulator 1, the first gain area 2, the second gain area 4 and the second modulator area 5 by using photolithography and wet etching techniques, and the active layer material outside the mask pattern (i.e., the grating area 3) is removed by using etching technology.

[0051] Step S3: Using MOCVD equipment to grow InGaAsP passive layer material 13 in grating area 3; the light fluorescence wavelength of InGaAsP passive layer material 13 is 1450nm, so as to achieve no absorption of laser; by setting the light fluorescence wavelength of InGaAsP passive layer to 1450nm, the emission wavelength of laser (generally similar wavelength) is avoided. The optical properties of this material can effectively reduce the loss of laser photons from the grating area and avoid excessive absorption of laser energy in the grating area. This can not only improve the efficiency of the laser, but also ensure the stability of the light intensity of the laser output.

[0052] Step S4: Figure 4 As shown, a second mask layer 14 of SiO2 material is made in the first gain region 2, the grating region 3, and the second gain region 4. In the modulator region, the quantum well intermixing technology is used to induce the components of the quantum well and the barrier to intermix at the atomic interface, so that the energy level of the quantum well machine is increased, and the wavelength of the modulator quantum well band gap is blue-shifted; by phosphorus ion implantation and rapid thermal annealing after implantation, the diffusion of vacancy defect concentration is achieved, and then the blue shift of the light fluorescence wavelength of the first modulator region 1 and the second modulator region 5 is achieved, and the modulator region material 15 is obtained. The blue shift range of the modulator region material 15 is between 20-100nm. Therefore, the modulator material 1 can enable the first modulator region 1 and the second modulator region 5 at both ends to achieve wavelength red shift and absorb the emitted laser under the action of reverse voltage.

[0053] Step S5: Corrode and remove the second mask layer 14 and the first mask layer on the surface of the first gain region 2 and the second gain region 4 in step S2, so that the active material 12 of the first gain region 2 and the second gain region 4 are in the same plane with the modulator region material 15 and the InGaAsP passive layer body material 13, and prepare the grating 16 on the surface of the InGaAsP passive layer body material 13; the grating 16 can make the grating region 3 change its refractive index under the action of different working currents, thereby changing the selected wavelength of the grating region and causing wavelength tuning.

[0054] Step S6: Figure 1 As shown, an InP cap layer 17 and a contact layer 18 are grown on the overall surface consisting of the first modulator region 1, the first gain region 2, the grating region 3, the second gain region 4 and the second modulator region 5, and a ridge waveguide structure is manufactured; by manufacturing the ridge waveguide structure, the carrier injection efficiency can be improved, thereby optimizing the electro-optical conversion performance; it can also enhance the confinement and propagation efficiency of the light beam, reduce optical losses, improve the stability and reliability of the device, and improve the long-term performance.

[0055] Step S7: By means of photolithography and dry etching techniques, an electrical isolation groove is etched on the contact layer 18 to achieve electrical isolation between the first modulator 1, the first gain region 2, the second gain region 4 and the second modulator region 5; electrical isolation is used to enhance the adjustability and flexibility of the device, support independent control of different regions, reduce thermal effects and thermal crosstalk, and improve device reliability and long-term stability.

[0056] Step S8: Make a P-side electrode 19 on the contact layer 18 after the electrical isolation groove is etched; make an N-side electrode 20 at the bottom of the entire tube core after the substrate 11 is thinned. The contact resistance is reduced and the current-light output characteristics of the laser are improved by using a gold contact layer of reasonable thickness and a gold-germanium-nickel alloy electrode.

[0057] The cross section of the finished tube core is as follows: Figure 5 As shown, Figure 5 The schematic cross-sectional view of the light-emitting end face of the device is shown. From bottom to top, there are the gold-germanium-nickel alloy N-side electrode 20, substrate 11, modulator material 15, InP cap layer 17, contact layer 18 and titanium-gold P-side electrode 19.

[0058] As a preferred embodiment, the active layer 12 includes, from bottom to top, a stacked InGaAsP lower waveguide layer, a multi-quantum well layer, and an upper waveguide layer.

[0059] This stacked design can optimize the propagation and excitation efficiency of light. Specifically: the InGaAsP lower waveguide layer helps to achieve good beam confinement and enhance the light transmission capability; the multi-quantum well layer provides efficient carrier injection and laser gain, which can enhance the light emission intensity and efficiency; the upper waveguide layer further constrains the light beam and improves the propagation accuracy of the light beam. Overall, this structure improves the performance of the laser, ensuring higher laser output power and lower threshold current.

[0060] As a preferred embodiment, the fluorescence wavelength of the active layer 12 is 1550 nm.

[0061] This design is because 1550nm has the lowest transmission loss in standard single-mode optical fiber (such as SMF-28), and the attenuation of optical signals at 1550nm wavelength is minimal, about 0.2 dB / km, which can maintain high signal quality during long-distance transmission. At the same time, the 1550nm wavelength is highly matched with the operating frequency band of erbium-doped fiber amplifiers (EDFA). In optical fibers, the 1550nm wavelength also exhibits low dispersion, so that the propagation of optical signals will not be distorted too quickly, which helps maintain the signal quality of high-speed data transmission.

[0062] In a specific embodiment, the thickness of titanium and gold in the titanium-gold P-side electrode 19 made on the contact layer 18 is 50nm and 600nm respectively; the thickness of the gold-germanium-nickel alloy N-side electrode 20 made on the side of the substrate 11 away from the active area is 150nm.

[0063] In the P-side electrode, the titanium layer provides good adhesion and mechanical strength, while the gold layer provides good conductivity with low resistance, ensuring that current can be efficiently injected into the laser from the P-side to reduce the contact resistance of the electrode, thereby improving the working efficiency and response speed of the device. The N-side electrode uses a gold-germanium-nickel alloy with a thickness of 150nm. This material combination can improve the contact performance of the N-side electrode. Gold-germanium-nickel alloy has low resistivity and excellent heat resistance, and is suitable for use as an electrode for semiconductor lasers, which can effectively reduce the loss of current injection.

[0064] The wavelength tunable electro-absorption modulated laser and its preparation method provided in this embodiment adopt quantum well hybrid technology in the preparation process of wavelength tunable laser and modulator integrated chip, and can realize the integration of three kinds of bandgap width materials through epitaxial growth of primary active material and primary passive material. By adopting quantum well hybrid technology in the modulator area, the quantum well energy level is increased, and then the band gap wavelength of the modulator is adjusted, so as to obtain the blue shift of wavelength. This design enables the laser to adjust the emission wavelength of the laser under the action of reverse voltage, realize the red shift absorption of wavelength, and improve the flexibility of wavelength adjustment.

[0065] During the entire preparation process, advanced processes such as MOCVD growth technology, lithography, etching, and rapid thermal annealing are used to ensure precise control of materials and structures, and to obtain high-quality devices. At the same time, through the mask pattern and corrosion removal process, high-precision grating production is ensured, and the device performance is further improved. By using InGaAsP materials with different fluorescence wavelengths and cleverly designing the grating area to avoid the wavelength of laser absorption (1450 nm), the photon loss in the grating area can be effectively reduced, thereby improving the efficiency of the laser. Such a design can ensure the stability of the output light intensity of the laser and improve the performance of the overall laser. By optimizing the structural design, material selection and processing technology, the present invention not only improves the efficiency, stability and tuning performance of the laser, but also enhances the reliability and long-term performance of the device, and has good application potential and market prospects.

[0066] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by any technician familiar with the technical field within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention.

Claims

1. A wavelength tunable electro-absorption modulated laser, characterized in that: include: A substrate (11) and a first modulator region (1), a first gain region (2), a grating region (3), a second gain region (4) and a second modulator region (5) arranged in sequence on the substrate (11) and located on the same plane; the constituent materials of the first modulator region (1) and the second modulator region (5) are both doped with phosphorus ions; The first gain region (2) and the second gain region (4) are used to excite lasers of multiple wavelengths under the action of different direct currents; the grating region (3) is used to select modes for the multiple wavelengths and output single-wavelength lasers; the first modulator region (1) and the second modulator region (5) are used to narrow the bandgap width under the action of reverse voltage and to serve as light output ends to emit tunable lasers; The first modulator region (1), the first gain region (2) and the grating region (3) form a first laser tuner; the second modulator region (5), the second gain region (4) and the grating region (3) form a second laser tuner; the first laser tuner and the second laser tuner realize double-ended laser emission.

2. The wavelength tunable electro-absorption modulated laser according to claim 1, characterized in that: The materials of the first modulator region (1), the first gain region (2), the second gain region (4) and the second modulator region (5) are InGaAsP or InGaAlAs quantum well materials.

3. The wavelength tunable electro-absorption modulated laser according to claim 1, characterized in that: The material of the substrate (11) is N-type indium phosphide.

4. A method for preparing a wavelength tunable electro-absorption modulated laser, used to prepare the wavelength tunable electro-absorption modulated laser as claimed in any one of claims 1 to 3, characterized in that: include: Growing an active layer (12) on a substrate (11); dividing the layer where the active layer (12) is located into a first modulator region (1), a first gain region (2), a grating region (3), a second gain region (4) and a second modulator region (5) which are arranged in sequence; A first mask layer made of SiO2 is prepared on the surfaces of the first modulator region (1), the first gain region (2), the second gain region (4) and the second modulator region (5), and an active layer material of the grating region (3) is removed by etching technology; Growing an InGaAsP passive layer material (13) in the grating region (3); A second mask layer (14) made of SiO2 is fabricated in the first gain region (2), the grating region (3), and the second gain region (4); a phosphorus ion implantation is performed in the first modulator region (1) and the second modulator region (5) using quantum well intermixing technology, followed by rapid thermal annealing to achieve diffusion of vacancy defect concentration, induce mutual intermixing of components of the quantum well and barrier at the atomic interface, increase the quantum well machine energy level, achieve blue shift of the quantum well band gap wavelength, and obtain a modulator region material (15); and the modulator region material (15) and the InGaAsP passive layer body material (13) are in the same plane; The second mask layer (14) and the first mask layer are removed by etching, so that the active layer (12) of the first gain region (2) and the second gain region (4) are in the same plane as the modulator region material (15) and the InGaAsP passive layer body material (13), and a grating (16) is prepared on the surface of the InGaAsP passive layer body material (13); Growing an InP cap layer (17) and a contact layer (18) on the overall surface consisting of the first modulator region (1), the first gain region (2), the grating region (3), the second gain region (4) and the second modulator region (5), and manufacturing a ridge waveguide structure; An electrical isolation groove is etched on the contact layer (18) to achieve electrical isolation between the various regions.

5. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 4, characterized in that: The active layer (12) comprises, from bottom to top, a stacked InGaAsP lower waveguide layer, a multi-quantum well layer and an upper waveguide layer.

6. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 4, characterized in that: The light fluorescence wavelength of the active layer (12) is 1550 nm.

7. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 4, characterized in that: The method further comprises: Making a P-side electrode on the contact layer (18) after the electrical isolation groove etching is completed; An N-side electrode is fabricated on a side of the substrate (11) away from the active layer (12).

8. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 4, characterized in that: The growth of the active layer (12) on the substrate (11) is achieved by vapor deposition of an organic metal compound.

9. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 4, characterized in that: The method for preparing a first mask layer made of SiO2 material on the surfaces of the first modulator region (1), the first gain region (2), the second gain region (4) and the second modulator region (5) is implemented by using photolithography technology.

10. The method for preparing a wavelength tunable electro-absorption modulated laser according to claim 6, characterized in that: The light fluorescence wavelength of the InGaAsP passive layer material (13) is 1450nm.

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