Substrate state measuring device, plating device, and substrate state measuring method

Abstract

The state of a substrate to be plated is measured. The substrate state measurement device comprises: a stage configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; at least one white confocal sensor configured to measure the surface of the substrate supported by the stage; and a state measurement module configured to measure the state of the power supply member contact area, based on detection by the white confocal sensor of the power supply member contact area on the substrate.

Description

[0001] This application is a divisional application of the invention patent application with Chinese application number 202280041940.8 (the name of the original application is "Substrate state measuring device, plating device and substrate state measuring method", and the application date of the original application is August 26, 2022). Technical Field

[0002] The present application relates to a substrate state measuring device, a plating device and a substrate state measuring method. Background Art

[0003] As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known (for example, see Patent Document 1). In a cup-type electrolytic plating apparatus, a substrate (for example, a semiconductor wafer) held by a substrate holder with the surface to be plated facing downward is immersed in a plating solution and a voltage is applied between the substrate and an anode, thereby depositing a conductive film on the surface of the substrate.

[0004] In order to plate a substrate using an electrolytic plating system, a resist layer having a resist pattern is formed on a substrate such as a semiconductor wafer, which has a seed layer formed thereon. The substrate with the resist layer is then irradiated with ultraviolet light, for example, to remove resist residue from the substrate surface (ashing), and the resist surface is hydrophilized (descum treatment).

[0005] Furthermore, in a plating apparatus, a user typically pre-sets parameters such as a plating current value and a plating time as a plating treatment plan based on the target plating film thickness and the actual plating area of ​​the substrate to be plated, and performs plating according to the set treatment plan (for example, see Patent Document 2). Furthermore, multiple wafers on the same carrier are plated using the same treatment plan.

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2008-19496

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 2002-105695

[0008] As mentioned above, before the plating process, a seed layer and a resist layer are formed on the substrate. However, there is a situation in which the uniformity of the plating film thickness formed on the substrate is damaged by the state of the seed layer and the resist layer etc. formed on the substrate. As an example, the substrate contacts the power supply component (contact piece) of the substrate holder to supply power, but if there are resist residues etc. that become energizing obstacles in the substrate area contacted with the power supply component, then the plating process cannot be properly implemented. In addition, as an example, in the electrolytic plating device, there is a so-called dry contact (dry contact) method that adopts the contact surroundings of the power supply component and the substrate to be shielded by a sealing component to avoid immersion of the plating solution. In such a case, if there are concave-convex or foreign matter etc. in the contact area with the sealing component in the substrate, the plating solution immerses the contact portion between the power supply component and the substrate, and cannot properly implement the plating process. In addition, according to the plating pattern that is desired to be formed on the substrate, a desired resist pattern is formed on the substrate. However, if the resist pattern formed on the substrate, especially the aperture ratio of the substrate, varies, the current density flowing between the substrate and the anode varies, thereby affecting the uniformity of the plating film pressure or the time required for the plating process. As described above, if the state of the substrate to be plated is understood, it is possible to appropriately perform the plating process by avoiding plating on the substrate that causes abnormalities or performing plating processes that are appropriate to the state of the substrate. Summary of the Invention

[0009] In view of the above-mentioned actual situation, one object of the present application is to measure the state of a substrate to be plated.

[0010] According to one embodiment, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the workbench, and to measure the state of the power supply component contact area based on the detection of the area in the substrate that contacts the power supply component, that is, the power supply component contact area, by the white confocal sensor.

[0011] According to one embodiment, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the workbench, and to measure the state of the sealing component contact area based on the detection of the area of ​​the substrate in contact with the sealing component, that is, the sealing component contact area, by the white confocal sensor.

[0012] According to one embodiment, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the workbench, and to measure the state of the plated area based on the detection of the plated area in the substrate by the white confocal sensor.

[0013] According to another embodiment, a substrate state measuring method is proposed, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting an area of ​​the substrate that contacts a power supply component, i.e., a power supply component contact area, using a white confocal sensor; and measuring the state of the power supply component contact area based on the detection of the white confocal sensor.

[0014] According to another embodiment, a substrate state measuring method is proposed, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting an area of ​​the substrate that contacts a sealing component, i.e., a sealing component contact area, using a white confocal sensor; and measuring the state of the sealing component contact area based on the detection of the white confocal sensor.

[0015] According to another embodiment, a substrate state measuring method is proposed, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting a plated area in the substrate by a white confocal sensor; and measuring the state of the plated area based on the detection of the white confocal sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a perspective view showing the overall structure of the plating apparatus according to the embodiment.

[0017] Figure 2 It is a plan view showing the overall structure of the plating apparatus according to the embodiment.

[0018] Figure 3 It is a longitudinal sectional view schematically showing the structure of the plating module according to the embodiment.

[0019] Figure 4 It is a diagram schematically showing the plate surface of the substrate according to the embodiment.

[0020] Figure 5 It is a longitudinal sectional view schematically showing the structure of the substrate state measuring module according to the embodiment.

[0021] Figure 6 This is a schematic diagram for explaining the state measurement of the substrate state measurement module according to the embodiment.

[0022] Figure 7 This is a diagram showing an example of a white confocal sensor and a substrate cross section according to the present embodiment.

[0023] Figure 8 This is a diagram showing an example of signal detection values ​​of a white confocal sensor.

[0024] Figure 9 This is a flowchart showing an example of a substrate state measuring method by the substrate state measuring module.

[0025] Figure 10 This is a schematic functional block diagram of the substrate state measurement module of this embodiment.

[0026] Figure 11 It is a longitudinal sectional view schematically showing the structure of a substrate state measuring module according to a modified example. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings described below, identical or corresponding components are denoted by identical reference numerals and redundant descriptions are omitted.

[0028] Figure 1 It is a perspective view showing the overall structure of the plating apparatus 1000 according to this embodiment. Figure 2 1 is a top view showing the overall structure of the plating device 1000. Figure 1 as well as Figure 2 As shown, the plating apparatus 1000 includes a loading port 100 , a transfer robot 110 , an aligner 120 , a pre-wetting module 200 , a pre-preg module 300 , a plating module 400 , a cleaning module 500 , a spin dryer 600 , a transfer device 700 , and a control module 800 .

[0029] The loading port 100 is a module for loading a substrate as an object to be plated, which is housed in a box such as a FOUP (not shown) into the plating device 1000, or for unloading a substrate from the plating device 1000 to the box. In this embodiment, four loading ports 100 are arranged in a horizontal direction, but the number and arrangement of the loading ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, and the transport device 700. The transport robot 110 and the transport device 700 can transfer substrates via a temporary loading platform (not shown) when transferring substrates between the transport robot 110 and the transport device 700.

[0030] The aligner 120 is a module for matching the position of the orientation plane, recess, etc. of the substrate with the prescribed direction. In the present embodiment, two aligners 120 are arranged in a horizontal direction, but the number and configuration of the aligners 120 are arbitrary. The pre-wet module 200 utilizes a treatment liquid (pre-wet liquid) such as pure water or degassed water to wet the plated surface of the substrate before the plating process, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. The pre-wet module 200 is configured to implement a pre-wet process, which is to replace the treatment liquid inside the pattern with a plating liquid during plating, thereby easily supplying the plating liquid to the pattern interior. In the present embodiment, two pre-wet modules 200 are arranged in a vertical direction, but the number and configuration of the pre-wet module 200 are arbitrary.

[0031] The prepreg module 300 is configured to perform a prepreg treatment, which is a treatment process in which a treatment liquid such as sulfuric acid or hydrochloric acid is used to etch away an oxide film having a large resistance, such as a seed layer surface, formed on the plated surface of a substrate before the plating treatment, to clean or activate the surface of the plated substrate. In the present embodiment, two prepreg modules 300 are arranged in an up-down direction, but the number and arrangement of the prepreg modules 300 are arbitrary. The plating module 400 performs a plating treatment on the substrate. In the present embodiment, there are two groups of 12 plating modules 400, each of which is arranged in a up-down direction with 3 units and in a horizontal direction with 4 units, so that a total of 24 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are arbitrary.

[0032] The cleaning module 500 is configured to perform cleaning on the substrate in order to remove the plating liquid remaining in the substrate after the plating process. In the present embodiment, two cleaning modules 500 are arranged in an up-down direction, but the number and configuration of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for rotating and drying the substrate after the cleaning process at high speed. In the present embodiment, two spin dryers are arranged in an up-down direction, but the number and configuration of the spin dryers are arbitrary. The conveying device 700 is a device for transporting substrates between multiple modules in the plating device 1000. The control module 800 is configured to control multiple modules of the plating device 1000, and can be composed of, for example, a common computer or a special computer having an input / output interface with an operator.

[0033] An example of a series of plating processes in the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the loading port 100. Next, the transport robot 110 removes the substrate from the cassette in the loading port 100 and transports the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation plane, notches, etc. of the substrate with a predetermined orientation. The transport robot 110 delivers the substrate, whose orientation has been adjusted by the aligner 120, to the transport apparatus 700.

[0034] The transport device 700 transports the substrate received from the transport robot 110 to the pre-wetting module 200. The pre-wetting module 200 performs a pre-wetting process on the substrate. The transport device 700 transports the pre-wetting substrate to the prepreg module 300. The prepreg module 300 performs a pre-preg process on the substrate. The transport device 700 transports the pre-preg substrate to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0035] The transport device 700 transports the plated substrates to the cleaning module 500. The cleaning module 500 cleans the substrates. The transport device 700 transports the cleaned substrates to the spin dryer 600. The spin dryer 600 dries the substrates. The transport device 700 transfers the dried substrates to the transport robot 110. The transport robot 110 transports the substrates received from the transport device 700 to the cassette at the load port 100. Finally, the cassette containing the substrates is unloaded from the load port 100.

[0036] <Structure of the plating module>

[0037] Next, the structure of the plating module 400 will be described. In this embodiment, the 24 plating modules 400 have the same structure, so only one plating module 400 will be described. Figure 3 1 is a longitudinal sectional view schematically showing the structure of the plating module 400 of this embodiment. Figure 3As shown, the plating module 400 includes a plating tank 410 for storing a plating solution. The plating tank 410 includes a cylindrical inner tank 412 with an open top surface and an outer tank 414 provided around the inner tank 412 to retain the plating solution overflowing from the upper edge of the inner tank 412.

[0038] The plating module 400 includes a diaphragm 420 that vertically separates the interior of the inner tank 412. The interior of the inner tank 412 is divided into a cathode region 422 and an anode region 424 by the diaphragm 420. The cathode region 422 and the anode region 424 are each filled with a plating solution. An anode 430 is provided on the bottom surface of the inner tank 412 in the anode region 424. A resistor 450 is provided in the cathode region 422, facing the diaphragm 420. The resistor 450 is a component for achieving uniform plating treatment on the plated surface Wf-a of the substrate Wf. In addition, in this embodiment, an example in which the diaphragm 420 is provided is shown, but the diaphragm 420 may also be omitted.

[0039] In addition, the plating module 400 is provided with a substrate holder 440, which is used to hold the substrate Wf in a state where the plated surface Wf-a is facing downward. The substrate holder 440 holds the edge of the substrate Wf in a state where a portion of the plated surface Wf-a (the plated area) is exposed. The substrate holder 440 is provided with power supply contacts, which are used to contact the substrate Wf and supply power to the substrate Wf from a power source not shown. In this embodiment, a so-called dry contact method is adopted in which the contact portion between the power supply contact of the substrate holder 440 and the substrate Wf is shielded to avoid infiltration of the plating liquid or other liquids. The substrate holder 440 has a sealing component 441, which seals the power supply contact contact area (contact area CA) of the substrate Wf in a manner that prevents the plating liquid from acting on the contact portion between the power supply contact and the substrate Wf.

[0040] Figure 4 : is a diagram schematically showing the plate surface (plated surface Wf-a) of the substrate Wf in this embodiment. In this embodiment, the substrate Wf is a circular substrate. As shown in the figure, the substrate Wf is formed with a circular plated area PA on the inner peripheral side, and an annular contact area CA for contacting the power supply contact of the substrate holder 440 is formed on the outer peripheral side of the plated area PA. In addition, an annular sealing component contact area (sealing area) SA for contacting the sealing component 441 of the substrate holder 440 is formed between the plated area PA and the contact area CA. In addition, for easy understanding, in Figure 4 In the embodiment, the sealing area SA is hatched. In the contact area CA, a seed layer SL is formed without being covered by the resist layer RL in such a manner as to be in contact with the power supply contact of the substrate holder 440 and to be conductive. Figure 6). In addition, in the sealing area SA, a resist layer RL is uniformly formed in such a manner as to contact with the sealing member 441 of the substrate holder 440 and seal the plating solution (see Figure 6 ). In addition, in the plating area PA, a resist layer RL having a resist pattern having an opening communicating with the seed layer SL is formed in such a manner that a desired plating pattern is formed by plating treatment (see Figure 6 ).

[0041] Refer again Figure 3 , the plating module 400 is provided with a lifting mechanism 442 for lifting and lowering the substrate holder 440. In addition, in one embodiment, the plating module 400 is provided with a rotating mechanism 448 for rotating the substrate holder 440 around a vertical axis. The lifting mechanism 442 and the rotating mechanism 448 can be implemented by well-known mechanisms such as motors. By using the lifting mechanism 442, the substrate Wf is immersed in the plating solution in the cathode area 422, so that the plated area PA of the substrate Wf is exposed to the plating solution. In addition, in one embodiment, the plating process is performed while the substrate holder 440 is rotated using the rotating mechanism 448. The plating module 400 is configured to apply a voltage between the anode 430 and the substrate Wf in this state, thereby applying a plating process to the plated surface Wf-a (plated area PA) of the substrate Wf.

[0042] In addition, the above-mentioned plating module 400 performs the plating process in a state where the plated surface Wfa of the substrate Wf faces downward, but is not limited to such an example. As an example, in the plating module 400, the plating process can also be performed in a state where the plated surface Wf-a faces upward or sideways.

[0043] <Substrate status measurement module>

[0044] The plating apparatus 1000 includes a substrate state measuring module 130 for measuring the state of the substrate Wf before the plating process in the plating module 400. The substrate state measuring module 130 corresponds to an example of a substrate state measuring device. Figure 5 is a longitudinal sectional view schematically showing the structure of a substrate state measuring module 130 according to one embodiment. Figure 6 This is a schematic diagram for explaining the state measurement performed by the substrate state measurement module 130. As an example, the substrate state measurement module 130 is provided in the aligner 120. However, the substrate state measurement module 130 may also be provided in any of the pre-wetting module 200, the pre-preg module 300, or the conveying device 700. Furthermore, the substrate state measurement module 130 may also be provided as a standalone module.

[0045] The substrate state measurement module 130 includes a workbench 132 configured to support and rotate the substrate Wf. A rotation mechanism 134 for rotating the workbench 132 can be implemented by a known mechanism such as a motor. In addition, the substrate state measurement module 130 includes a white confocal sensor 136 for measuring the surface of the substrate Wf placed on the workbench 132. Figure 5 In the example shown, the white confocal sensor 136 is configured to be movable by a moving mechanism 138. This allows the detection position of the white confocal sensor 136 to be changed. In addition, without being limited to this, the moving mechanism 138 may also be configured to move the white confocal sensor 136 along the radial direction of the substrate Wf. In this embodiment, the substrate state measuring module 130 includes a white confocal sensor 136, such as Figure 6 As shown, the detection position of the white confocal sensor 136 can be changed to the contact area CA, the sealing area SA, and the plated area PA by the moving mechanism 138.

[0046] Figure 7 1 is a diagram showing an example of a cross section of a white confocal sensor and a substrate in this embodiment. Figure 8 This diagram shows an example of signal detection values ​​from a white confocal sensor. The white confocal sensor 136 includes a light source 1364 that generates irradiation light having multiple wavelength components; a light receiving unit 1366 that receives reflected light from the substrate Wf; and a processing unit 1362 that measures the distance to the interface position where the light was reflected based on the wavelength components of the light received by the light receiving unit 1366.

[0047] When the irradiation light is irradiated to the region where the seed layer SL is exposed in the substrate Wf, the irradiation light is reflected by the surface of the seed layer SL. Thus, as the distance to the substrate Wf calculated by the processing unit 1362, the distance to the seed layer SL is represented (in Figure 5 On the other hand, when the irradiation light is irradiated to the resist layer RL in the substrate Wf, the irradiation light is mainly reflected by the surface of the resist layer RL. Therefore, as the distance to the substrate Wf calculated by the processing unit 1362, the distance to the resist layer RL (in Figure 5In the figure, the signal intensity for A2 is displayed larger. Furthermore, if the resist layer RL transmits a portion of the irradiation light, a portion of the irradiation light that strikes the resist layer RL is reflected by the surface of the resist layer RL, while another portion of the irradiation light passes through the resist layer RL and is reflected by the seed layer SL on the back surface of the resist layer RL. Therefore, as the distance to the substrate Wf calculated by the processing unit 1362, the signal intensities representing the distance to the resist layer RL (A2) and the distance to the seed layer SL (A1) are each displayed larger.

[0048] Based on the detection by the white confocal sensor 136, the substrate state measurement module 130 measures the state of the substrate Wf. Measurement of the state of the substrate Wf based on the detection by the white confocal sensor 136 is performed, for example, by the control module 800. In this case, the control module 800 constitutes a portion of the substrate state measurement module 130. However, the present invention is not limited to this example, and the substrate state measurement module 130 may also include a structure for measuring the state of the substrate Wf separately from the control module 800.

[0049] Figure 9 1 is a flowchart showing an example of a substrate state measuring method by the substrate state measuring module 130. In the substrate state measuring method of this embodiment, first, a substrate Wf is placed on the work table 132 (step S10). The substrate Wf is placed on the work table 132 by, for example, the transfer robot 110.

[0050] Next, while the substrate Wf placed on the worktable 132 is rotated, the white confocal sensor 136 detects the power supply member contact area (contact area) CA (step S12), and based on this detection, the state of the contact area CA is measured (step S14). The white confocal sensor 136 preferably detects the contact area CA as the substrate Wf rotates at least once.

[0051] Here, as a first example, the processing in step S12 is performed by rotating the substrate Wf at a slow speed based on the sampling period of the white confocal sensor 136 so that the distance between the white confocal sensor 136 and the substrate Wf can be measured across the entire contact area CA. As described above, the seed layer SL is formed in the contact area CA without being covered by the resist layer RL. Under a preferred state of the substrate Wf, the detection value of the white confocal sensor 136 is constant across the entire contact area CA. Therefore, in the first example, in the processing of step S14, if the detection value across the entire contact area CA is within a predetermined normal range, the substrate state measurement module 130 (control module 800) can determine that the contact area CA is normal. Furthermore, if the detected value deviates from the normal range, the substrate state measurement module 130 can determine that the contact area CA has unevenness, resulting in an abnormality that may cause poor contact with the power supply contacts of the substrate holder 440. Furthermore, in the first example, the substrate state measurement module 130 preferably takes into account the tilt of the substrate Wf and detection noise when measuring the state of the contact area CA.

[0052] Furthermore, as a second example, in the case where the contact area CA includes uneven surfaces, the processing of step S12 is performed by rotating the substrate Wf at a relatively fast speed such that the signal intensities representing multiple distances are largely indicated by the white confocal sensor 136. In this case, in a preferred state of the substrate Wf, the signal intensity representing a single distance is detected by the white confocal sensor 136 throughout the entire contact area CA. Therefore, in the second example, in the processing of step S14, when the substrate state measurement module 130 (control module 800) detects a single distance throughout the entire contact area CA, it can be determined that the contact area CA is normal. Furthermore, when the substrate state measurement module 130 measures the signal intensities representing multiple distances separated by a predetermined distance, it can be determined that the contact area CA has uneven surfaces and is abnormal. Furthermore, in the second example, the substrate state measurement module 130 preferably measures the state of the contact area CA taking into account detection noise. Furthermore, the second example is considered superior to the first example in that the detection influence caused by the tilt of the substrate Wf is small.

[0053] Next, in the substrate state measurement method, the white confocal sensor 136 detects the seal member contact area (seal area) SA while rotating the substrate Wf placed on the work table 132 (step S22), and based on this detection, the state of the seal area SA is measured (step S24). The white confocal sensor 136 preferably detects the seal area SA as the substrate Wf rotates at least once.

[0054] As a first example, the processing of step S22 is similar to the processing of the first example of step S12, and the substrate Wf can be rotated at a slow speed. As described above, the resist layer RL is uniformly formed in the sealing area SA. In the preferred state of the substrate Wf, the detection value of the white confocal sensor 136 becomes constant throughout the entire sealing area SA. Therefore, in the first example, in the processing of step S24, if the substrate state measurement module 130 (control module 800) detects values ​​within the predetermined normal range across the entire sealing area SA, it can determine that the sealing area SA is normal. In addition, if the substrate state measurement module 130 measures a detection value that deviates from the normal range, it can determine that there are irregularities in the sealing area SA, indicating an abnormality.

[0055] Furthermore, as a second example, the processing in step S22 is similar to the processing in the second example of step S12, and the substrate Wf can be rotated at a faster speed. In the second example, in the processing in step S24, if the substrate state measurement module 130 (control module 800) detects a constant number (one or two) of distances across the entire sealing area SA, it can determine that the sealing area SA is normal. Furthermore, if the detected distance varies as an example, the substrate state measurement module 130 can determine that the sealing area SA is abnormal due to unevenness.

[0056] Next, in the substrate state measuring method, while the substrate Wf arranged on the workbench 132 is rotated, the plated area PA is detected by the white confocal sensor 136 (step S32), and the state of the plated area PA is measured based on the detection (step S34). The detection of the plated area PA by the white confocal sensor 136 is preferably performed at least once as the substrate Wf rotates. In addition, the detection of the plated area PA by the white confocal sensor 136 is preferably performed at multiple different positions in the radial direction of the substrate Wf. The detection of the plated area PA by the white confocal sensor 136 can also be performed by moving the white confocal sensor 136 by the moving mechanism 138. Here, it is preferred that the detection of the plated area PA by the white confocal sensor 136 be an area less than 25% of the plated area PA.

[0057] The processing of step S32 is preferably performed by rotating the substrate Wf at a slow speed based on the sampling period of the white confocal sensor 136 in such a manner that the distance between the white confocal sensor 136 and the substrate Wf can be measured throughout the entire detection area. As described above, a resist layer RL having a resist pattern is formed in the plated area PA, and the detection of the white confocal sensor 136 varies depending on the resist pattern. In the processing of step S34, as an example, the substrate state measurement module 130 (control module 800) may also measure the aperture ratio of the resist layer RL based on the detection of the white confocal sensor 136. In addition, the substrate state measurement module 130 may also measure the normality / abnormality of the plated area PA as the state of the substrate Wf based on the detection of the plated area PA by the white confocal sensor 136. For example, the substrate state measurement module 130 may also determine that the plated area PA is abnormal if the resist pattern of the plated area PA is abnormal or if the resist layer RL of the plated area PA is abnormal.

[0058] After the state of the substrate Wf is measured based on detection by the white confocal sensor 136, the substrate state measurement module 130 (control module 800) determines whether the state of the substrate Wf is normal (step S40). As an example, the substrate state measurement module 130 determines that the substrate Wf is in a normal state if, based on the state of the contact area CA or the sealing area SA, the substrate Wf can be plated normally. On the other hand, the substrate state measurement module 130 determines that the state of the substrate Wf is abnormal if, based on the state of the contact area CA or the sealing area SA, the substrate Wf is in a state unsuitable for being held by the substrate holder 440. Alternatively, the substrate state measurement module 130 may determine that the state of the substrate Wf is abnormal based on the state of the plated area PA.

[0059] When it is determined that the state of the substrate Wf is normal (S40: Yes), plating is performed on the substrate Wf based on the state of the plated area PA (step S42). Figure 9 The flowchart shown ends. During the plating process, the voltage applied to the substrate Wf may be determined based on the aperture ratio of the plated area PA, for example. On the other hand, when it is determined that the state of the substrate Wf is abnormal (S40: No), the plating process is not performed, and the substrate Wf is returned to a box such as a FOUP (not shown) (step S44). Figure 9 The flowchart shown ends. In this case, a buzzer or monitor (not shown) can also be used to notify the user of abnormalities in the substrate Wf. This method allows plating to be performed based on the state of the substrate Wf. Furthermore, if the substrate Wf is in a state where plating cannot be performed, processing of the substrate Wf can be terminated, thereby improving processing efficiency.

[0060] In addition, Figure 9In the substrate state measurement method shown, the contact area CA, the sealing area SA, and the plated area PA are detected in sequence by the white confocal sensor 136. However, the order of detection by the white confocal sensor 136 is arbitrary. In addition, at least one of the contact area CA, the sealing area SA, and the plated area PA may not be detected. For example, in the case where the substrate holder 440 does not have the sealing component 441, since the sealing area SA does not exist on the substrate Wf, the processing of steps S22 and S24 can be omitted. In addition, in Figure 9 In the substrate state measurement method shown, after measuring the state of the plated area PA, it is determined whether the state of the substrate Wf is normal. However, it is also possible to first determine whether the state of the substrate Wf is normal based on the measurement of the state of the contact area CA or the sealing area SA, and then measure the state of the plated area PA if the state of the substrate Wf is normal, and then perform the plating process on the substrate Wf.

[0061] <Measuring substrate conditions using machine learning>

[0062] The substrate state measurement module 130 may measure the state of the substrate Wf (state of the contact area CA, state of the sealing area SA, state of the plated area PA (aperture ratio of the plated area)) using a learning model constructed by machine learning. Figure 10 This is a schematic functional block diagram of the substrate state measurement module 130 in this embodiment. Figure 10 The functional modules shown can also be implemented as part of the substrate state measurement module 130 (substrate state measurement device) via the control module 800. The substrate state measurement module 130 includes a state variable acquisition unit 142 that acquires a state variable SV; a learning model generation unit 144 that learns and generates a learning model stored in the storage unit 150 based on the acquired state variable SV; and a meaning determination unit 148 that measures (determines) the state of the substrate Wf based on the acquired state variable SV and the learning model. Furthermore, the meaning determination unit 148 can generate image information representing the state of the substrate Wf surface based on the state variable SV as the state of the substrate Wf.

[0063] The state variable acquisition unit 142 acquires the state variable SV at predetermined time intervals (e.g., several msec, tens of msec). As an example, the predetermined time can be the same as or corresponding to the learning cycle of the learning model generation unit 144. In addition, in the present embodiment, the input from the white confocal sensor 136 is equivalent to the acquisition of the state variable SV by the state variable acquisition unit 142. The state variable SV may also include information such as the detection position information of the white confocal sensor 136 or the rotation speed of the substrate Wf. In addition, the state variable SV may also include information pre-inputted by the user into the plating device 1000. As an example, the state variable SV may also include information such as the material of the substrate Wf.

[0064] The learning model generation unit 144 learns the learning model (the state of the substrate relative to the state variable SV) based on an arbitrary learning algorithm generally referred to as machine learning. The learning model generation unit 144 repeatedly performs learning based on the state variable SV acquired by the state variable acquisition unit 142. The learning model generation unit 144 acquires a plurality of state variables SV, identifies the characteristics of the state variables SV, and interprets the correlation. In addition, the learning model generation unit 144 interprets the correlation of the state variable SV acquired next when the substrate state is measured relative to the current state variable SV. Moreover, the learning model generation unit 144 optimizes the inference of the state of the substrate Wf relative to the acquired state variable SV through repeated learning.

[0065] As an example, the learning model generation unit 144 is constructed by supervised learning. Supervised learning can also be carried out at the location where the plating device 1000 is set up, or it can be carried out at a manufacturing site or a dedicated learning location. As an example of supervised learning, the learning model generation unit 144 can also use measurement information of a substrate that pre-measures the state of the substrate or pre-judges the state of the substrate as teacher data. As such a substrate, as an example, a substrate with a resist film having a constant resist pattern can also be used.

[0066] In addition, the learning model generation unit 144 can also perform reinforcement learning to learn the learning model. Reinforcement learning is a method of giving rewards to actions (outputs) performed relative to the current state (input) in a certain environment to generate a learning model that obtains the maximum reward. As an example of performing reinforcement learning, the learning model generation unit 144 has: an evaluation value calculation unit 145, which calculates the evaluation value based on the state variable SV; and a learning unit 146, which learns the learning model based on the evaluation value. As an example, the evaluation value calculation unit 145 can also be a unit that gives a larger reward the shorter the time required for the plating process of the substrate Wf in the plating device 1000. In addition, as an example, the evaluation value calculation unit 145 can also be a unit that gives a larger reward the more constant the profile of the plating film formed on the substrate Wf is.

[0067] The substrate state measurement module 130 of the embodiment described above places a substrate Wf on a worktable 132 and rotates the substrate Wf while detecting the surface of the substrate Wf using a white confocal sensor 136. Based on this detection, the state of the substrate Wf can be measured to perform the plating process. In particular, by detecting the contact area CA, the sealing area SA, and the plated area PA, the substrate state can be measured, enabling appropriate plating.

[0068] Modifications

[0069] Figure 11 It is a longitudinal sectional view schematically showing the structure of the substrate state measuring module of the modified example. For the substrate state measuring module 130A of the modified example, descriptions of the parts that are repeated with the substrate state measuring module 130 of the above-mentioned embodiment are omitted. The substrate state measuring module 130A of the modified example has a plurality of white confocal sensors 136. As an example, the substrate state measuring module 130A has at least two white confocal sensors 136a that detects the contact area CA, a second white confocal sensor 136b that detects the sealing area SA, and a third white confocal sensor 136c that detects the plated area PA. Thus, the state of the substrate Wf can be detected by each white confocal sensor 136. In addition, at least one of the first to third white confocal sensors 136a to 136c can also be configured to be movable along the surface of the substrate Wf by a moving mechanism 138, similar to the white confocal sensor 136 of the above-mentioned embodiment. In addition, in particular, as Figure 11 As shown, the white confocal sensor 136c that detects the plated area PA may be provided with a plurality of sensors that detect different plated areas PA in the radial direction of the substrate Wf. In addition, in the substrate state measurement module 130A of the modified example, the second and third white confocal sensors 136b and 136c are examples of white confocal sensors for detecting areas other than the contact area CA.

[0070] The present invention can also be described in the following aspects.

[0071] [Method 1] According to Method 1, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the above-mentioned workbench, and to measure the state of the above-mentioned power supply component contact area based on the detection of the above-mentioned power supply component contact area by the above-mentioned white confocal sensor on the area of ​​the above-mentioned substrate that is in contact with the power supply component.

[0072] According to the first aspect, the state of the power supply member contact region of the substrate to be plated can be measured.

[0073] [Method 2] According to Method 2, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the workbench, and to measure the state of the sealing component contact area based on the detection of the area of ​​the substrate in contact with the sealing component, i.e., the sealing component contact area, by the white confocal sensor.

[0074] According to aspect 2, the state of the sealing member contact region of the substrate can be measured.

[0075] [Method 3] According to Method 3, a substrate state measuring device is proposed, which comprises: a workbench, which is configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; and at least one white confocal sensor, which is used to measure the plate surface of the substrate supported by the workbench, and to measure the state of the plated area based on the detection of the plated area in the substrate by the white confocal sensor.

[0076] According to aspect 3, the state of the plated region of the substrate can be measured.

[0077] [Mode 4] According to Mode 4, in addition to Mode 3, the white confocal sensor detects the plated area in the substrate within an area that is less than 25% of the plated area.

[0078] [Mode 5] According to Mode 5, based on Mode 3 or 4, the aperture ratio of the resist layer in the plated area is measured as the state of the plated area.

[0079] According to Method 5, the aperture ratio of the plated region can be measured.

[0080] [Method 6] According to Method 6, on the basis of Method 5, a storage unit is provided, the above-mentioned storage unit stores a learning model constructed by machine learning, the detection information of the above-mentioned white confocal sensor is input into the above-mentioned learning model to learn the learning model, and the above-mentioned learning model is used to measure the opening rate of the anti-etching layer of the above-mentioned plated area.

[0081] According to aspect 6, the aperture ratio of the plated region can be appropriately measured using the learning model.

[0082] [Mode 7] Mode 7, in addition to Modes 1 to 6, further includes a moving mechanism configured to move the white confocal sensor along the surface of the substrate.

[0083] According to aspect 7, the detection position of the white confocal sensor can be changed by the moving mechanism.

[0084] [Method 8] According to method 8, on the basis of methods 1 to 7, the at least one white confocal sensor includes a first white confocal sensor for detecting the contact area of ​​the power supply component, and a second white confocal sensor for detecting an area of ​​the substrate that is not the contact area of ​​the power supply component.

[0085] [Method 9] According to method 9, a plating device is proposed, comprising: a substrate state measuring device according to any one of methods 1 to 8; a substrate holder having the above-mentioned power supply component and used to hold the above-mentioned substrate; and a plating tank which contains a plating liquid and is used to perform plating by applying a voltage between the above-mentioned substrate and the above-mentioned anode while the substrate held by the above-mentioned substrate holder and the anode are immersed in the above-mentioned plating liquid.

[0086] [Method 10] According to Method 10, a substrate state measuring method is provided, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting an area of ​​the substrate that contacts a power supply component, i.e., a power supply component contact area, using a white confocal sensor; and measuring the state of the power supply component contact area based on the detection of the white confocal sensor.

[0087] [Method 11] According to Method 11, a substrate state measuring method is provided, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting an area of ​​the substrate that contacts a sealing component, i.e., a sealing component contact area, using a white confocal sensor; and measuring the state of the sealing component contact area based on the detection of the white confocal sensor.

[0088] [Method 12] According to Method 12, a substrate state measurement method is provided, which includes the following steps: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; while rotating the substrate placed on the workbench, detecting a plated area in the substrate by a white confocal sensor; and measuring the state of the plated area based on the detection of the white confocal sensor.

[0089] The embodiments of the present invention have been described above, but the embodiments of the invention described above are for facilitating understanding of the present invention and are not intended to limit the present invention. The present invention can be changed and improved without departing from its main purpose, and it is self-evident that the present invention includes its equivalents. In addition, any combination of the embodiments and modifications can be performed within the scope of at least a part of the above-mentioned problem or within the scope of at least a part of the effect, and any combination or omission of the various structural elements described in the claims and the specification can be performed.

[0090] Description of Reference Numerals

[0091] Wf...substrate; RL...resist layer; SL...seed layer; CA...contact area; PA...plated area; SA...sealing area; 100...loading port; 110...transfer robot; 120...aligner; 130, 130A...substrate state measurement module; 132...workbench; 134...rotation mechanism; 136...white confocal sensor; 138...moving mechanism; 150...storage unit; 200...pre-wetting module; 300...pre-preg module; 400...plating module; 410...plating tank; 430...anode; 440...substrate holder; 441...sealing component; 800...control module; 1000...plating device.

Claims

1. A substrate state measuring device, characterized in that: have: a worktable configured to support and rotate a substrate having a seed layer and a resist layer formed on the seed layer; at least one white confocal sensor, configured to measure a surface of a substrate supported by the workbench; and a storage unit storing a learning model constructed by machine learning, Detection information of the plated region on the substrate by the white confocal sensor is input into the learning model to perform learning of the learning model, and the aperture ratio of the resist layer in the plated region is measured using the learning model.

2. The substrate state measuring device according to claim 1, wherein: The white confocal sensor detects the plated area on the substrate within an area that is less than 25% of the plated area.

3. The substrate state measuring device according to claim 1, wherein A sensor moving mechanism is provided, and the sensor moving mechanism is configured to move the white confocal sensor along the plate surface of the substrate.

4. The substrate state measuring device according to claim 1, wherein The at least one white confocal sensor includes a first white confocal sensor for detecting the plated region of the substrate and a second white confocal sensor for detecting a region of the substrate that is not the plated region.

5. The substrate state measuring device according to claim 1, wherein Based on the detection by the white confocal sensor of the power supply member contact area, which is an area of ​​the substrate in contact with the power supply member, the state of the power supply member contact area is further measured.

6. The substrate state measuring device according to claim 3 or 4, characterized in that: Based on the detection of the sealing member contact area, which is an area of ​​the substrate in contact with the sealing member, by the white confocal sensor, the state of the sealing member contact area is further measured.

7. A plating device, characterized in that: have: The substrate state measuring device according to any one of claims 1 to 6; a substrate holder having a power supply component and configured to hold the substrate; and The plating tank contains a plating solution and is used to perform plating by applying a voltage between the substrate and the anode while the substrate held by the substrate holder and the anode are immersed in the plating solution.

8. A method for measuring substrate state, characterized in that: The steps include: placing a substrate having a seed layer and a resist layer formed on the seed layer on a workbench; While rotating the substrate disposed on the workbench, detecting a plated area in the substrate using a white confocal sensor; and The detection information of the white confocal sensor is input into a learning model constructed by machine learning to perform learning of the learning model, and the aperture ratio of the resist layer in the plated area is measured using the learning model.

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