Electrode assembly and plasma processing device

Abstract

The application provides an electrode assembly arranged in a plasma processing device, which is used for carrying a substrate to be processed, comprising: an electrostatic chuck used for carrying the substrate to be processed; a metal electrode arranged below the electrostatic chuck; a plurality of lifting devices, the top end of each lifting device penetrating through the top of the electrostatic chuck to the back of the substrate, and the bottom end of each lifting device being arranged in the metal electrode; a lifting motor arranged in the metal electrode and connected with the bottom end of the lifting device; and an auxiliary control circuit embedded in the metal electrode, which is electrically connected with each lifting motor and used for controlling each lifting motor to drive the lifting of each lifting device to realize the lifting of the substrate. The application realizes the multi-stage lifting of the substrate through the lifting motor, and reduces the structural complexity and production cost.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to an electrode assembly and a plasma processing device. Background Technology

[0002] Vacuum processing equipment is widely used in the semiconductor industry, with plasma processing equipment being the most important type. Plasma processing equipment uses radio frequency coupled discharge to generate plasma, which is then used to perform deposition, etching, and other processing on substrates (semiconductor wafers, glass substrates, etc.).

[0003] The structure of a typical plasma processing device is as follows: Figure 1 As shown, the system includes a cavity 100, within which are an upper electrode assembly 20 and a lower electrode assembly arranged opposite each other. Plasma is generated and maintained between the upper and lower electrodes to perform plasma etching on a substrate disposed on the lower electrode assembly. The lower electrode assembly includes a base 10, which acts as the lower electrode and is electrically coupled to the upper electrode assembly 20 above it. A coolant pipe 8 is provided in the base and is connected to an external chiller. The temperature of the base 10 is controlled by controlling the flow rate and temperature of the coolant output from the chiller to the coolant pipe 8 in the base. Below the base is a device plate 32, which has an airtight structure such as a sealing ring. The sealing of the device plate 32 creates a vacuum area above the device plate in the cavity, while the space 34 below the device plate 32 is an atmospheric environment. The base 10 is bonded to a heater 12 via an adhesive layer 11 located above it. An electrostatic chuck 13 is fixed above the heater 12, and the substrate to be processed is adsorbed onto the electrostatic chuck 13. At least one radio frequency (RF) power supply outputs RF power to the device board 32. Both the device board 32 and the base 10 are made of highly conductive aluminum and are in close contact with each other. The heater 12 contains multiple heating wires 121, which can be connected to independently controllable heating power supplies, allowing each heating wire to generate different heating powers to adjust the temperature of the upper substrate. The base 10 and the device board 32 are surrounded by an insulating ring 33. The insulating ring 33 also includes a grounded shielding ring 30 outside, which extends downward to the bottom of the reaction chamber and is grounded.

[0004] The plasma processing equipment also includes a ejector system for controlling the raising and lowering of the substrate. Existing ejector systems, such as... Figure 1 As shown, the device includes ejector pins 36, connecting mechanisms 35, and cylinders 37. Ejector pins 36 are disposed in the channel formed by the stack of the electrostatic chuck 13, the base 10, and the equipment plate 32. There are usually three ejector pins 36, which are connected to the cylinders 37 through the corresponding connecting mechanisms 35. The cylinders 37 provide lifting force to each ejector pin 36, so that the ejector pins 36 can move up or down to lift the substrate from the electrostatic chuck 13 or place the substrate on the electrostatic chuck 13.

[0005] The existing needle system has the following problems: (1) the structure is relatively complex; (2) the precision of the cylinder control needle lifting is not enough, and multiple lifting cannot be achieved. Specifically, in some semiconductor processes, such as cleaning the polymer deposited in the pocket area, the pocket area is the area surrounded by the back of the substrate, the stepped part of the edge ring 14 and the side of the electrostatic chuck 13, the substrate needs to be lifted to a height of about 2mm, at this time the needle 36 cannot accurately lift the substrate to this height due to the insufficient control precision of the cylinder, resulting in that the polymer in the pocket area cannot be completely cleaned. In addition, the substrate also needs to be lifted to the carrying height so that the mechanical arm can enter the chamber to carry the substrate in and out of the chamber, at this time, due to the limited lifting height of the primary cylinder, the setting of only one primary cylinder cannot meet the precision requirement of the carrying height. Therefore, in order to meet the lifting requirement of different heights, multiple cylinders need to be set to realize the lifting requirement of different heights, which further increases the complexity of components and production cost. SUMMARY

[0006] The purpose of the present application is to provide an electrode assembly and a plasma processing device, which sets the lifting device and the lifting motor in the metal electrode, the lifting motor is connected with the bottom end of the lifting device to provide lifting force for the lifting device; at the same time, the lifting motor is connected with the auxiliary control circuit arranged in the metal electrode, and the auxiliary control circuit is used to control each lifting motor to drive each lifting device to rise or fall, so as to realize the precise control of the lifting height of the substrate.

[0007] In order to achieve the above purpose, the present application provides an electrode assembly arranged in a plasma processing device, which is used to carry a substrate to be processed, and comprises: an electrostatic chuck used to carry a substrate to be processed; a metal electrode arranged below the electrostatic chuck; a plurality of lifting devices, the top end of each lifting device can pass through the top of the electrostatic chuck to the back of the substrate, and the bottom end of each lifting device is arranged in the metal electrode; a lifting motor arranged in the metal electrode and connected with the bottom end of the lifting device; and an auxiliary control circuit embedded in the metal electrode, which is electrically connected with the lifting motor and used to control each lifting motor to drive each lifting device to rise or fall, so as to realize the lifting of the substrate.

[0008] Preferably, the metal electrode comprises: a base arranged below the electrostatic chuck, and a device plate arranged below the base.

[0009] Preferably, each lifting device is electrically connected with one lifting motor.

[0010] Preferably, each of the lifting devices comprises a guide channel and a lifting pin; the guide channel is arranged through the electrostatic chuck, and the lifting pin is arranged in the guide channel and used for lifting the substrate.

[0011] Preferably, the equipment plate or the base is provided with mounting grooves for placing the lifting motors; the mounting grooves are arranged in one-to-one correspondence with the guide channels.

[0012] Preferably, the auxiliary control circuit is connected with an external power supply located below the equipment plate.

[0013] Preferably, a filter is further arranged between the auxiliary control circuit and the external power supply.

[0014] Preferably, the auxiliary control circuit comprises a PCB.

[0015] Preferably, the base comprises a first cooling channel, and the first cooling channel is communicated with an external first cooling source and used for temperature control of the substrate.

[0016] Preferably, a heat insulation layer is arranged between the base and the equipment plate.

[0017] Preferably, the equipment plate comprises a second cooling channel, and the second cooling channel is communicated with an external second cooling source and used for auxiliary temperature control of the substrate.

[0018] Preferably, the heat insulation layer is made of at least one of a low-thermal-conductivity ceramic material and a Teflon material, and the low-thermal-conductivity ceramic material comprises at least one of quartz, silicate and aluminum nitride.

[0019] Preferably, the thickness of the heat insulation layer is 1-30 mm.

[0020] Preferably, the base and / or the equipment plate are made of a high-thermal-conductivity metal, and the high-thermal-conductivity metal comprises aluminum.

[0021] The application further provides a plasma processing device, which comprises: a reaction cavity; an electrode assembly as described above, which is arranged at the bottom of the reaction cavity and used for carrying a substrate to be processed; a gas supply assembly arranged opposite to the electrode assembly; and a reaction gas is introduced into the reaction cavity through the gas supply assembly, so as to perform plasma etching on the substrate.

[0022] Compared with the prior art, the electrode assembly and the plasma processing device provided by the application have the following beneficial effects: the lifting motor and the auxiliary control circuit are arranged in the metal electrode, the number of revolutions of the motor rotor of the lifting motor is controlled by the auxiliary control circuit, and the multi-stage lifting requirement of the substrate is met; further, the heat insulation layer is arranged between the base and the equipment plate, the heat conduction between the base and the equipment plate is slowed down, the second cooling channel is arranged in the equipment plate, the temperature of the equipment plate is assisted and controlled, the temperature stability in the equipment plate is enhanced, the equipment plate is kept at the normal working temperature, and the damage of the high temperature to the lifting motor and the auxiliary control circuit is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 It is a sectional view of a prior art plasma processor;

[0024] Figure 2 It is a first embodiment schematic view of the electrode assembly and the plasma processing device of the application;

[0025] Figure 3 It is another embodiment schematic view of the electrode assembly of the application. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings of the embodiments of the application to Figure 1 ~Appendix Figure 3 The technical solutions, structural features, purposes achieved and effects of the embodiments of the application will be described in detail.

[0027] It should be noted that the drawings are very simplified and all use non-precise proportions, only for the purpose of facilitating and clearly assisting the description of the embodiments of the application, and are not used to limit the defined conditions of the embodiments of the application, so they do not have technical substantial significance, any modification of structure, change of proportional relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the application, should still fall within the scope covered by the disclosed technical content of the application.

[0028] It should be noted that in the application, the relationship terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes the explicitly listed elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment.

[0029] As the precision of lifting height of the existing technology controlled by the air cylinder is limited, the lifting height of the substrate cannot meet the different lifting requirements, therefore, in order to realize the precise control of the lifting height of the substrate, the structure of the electrode assembly is improved compared with the prior art, as shown in Figure 2 . Figure 2 The first embodiment of the plasma processing device provided with the improved electrode assembly is shown in the figure, which comprises a reaction chamber 200, a gas shower head assembly 201 arranged at the top of the reaction chamber 200, which is used as an upper electrode in this embodiment; and an electrode assembly arranged opposite to the gas shower head assembly 201, which is used as a lower electrode in this embodiment, that is, the reaction chamber is a capacitively coupled plasma processing device in this embodiment. In other embodiments, the reaction chamber can also be an inductively coupled plasma processing device, at this time, the gas shower head assembly 201 is only used as a gas supply assembly, and does not have the function of an upper electrode. The electrode assembly is located at the bottom of the reaction chamber 200 and is used to carry the substrate W to be processed; the reaction gas is introduced into the reaction chamber 200 through the gas shower head assembly 201, and the gas shower head assembly 201 and / or the electrode assembly is connected with a high-frequency radio frequency power source, so that the reaction gas forms and maintains plasma between the gas shower head assembly 201 and the improved electrode assembly, so as to perform plasma etching on the substrate carried on the electrode assembly.

[0030] As shown in Figure 2 , the electrode assembly comprises: an electrostatic chuck 202, which is provided with an electrode 221 connected with a high-voltage direct-current power source, and the substrate W to be processed is adsorbed on the electrostatic chuck 202 through the electrostatic chuck 202; a peripheral edge ring 204 is further arranged around the electrostatic chuck 202; a metal electrode 203 is arranged below the electrostatic chuck 202; the metal electrode 203 comprises a base 231 arranged below the electrostatic chuck 202 and a device plate 232 arranged below the base 231. The periphery of the base 231 and the device plate 232 is surrounded by an insulating ring 209, and the outer side of the insulating ring 209 further comprises a grounded shielding ring 210, which extends downward to the bottom of the reaction chamber 200 and is grounded. A heater 207 is further arranged between the upper side of the base 231 and the lower side of the electrostatic chuck 202, and the top of the base 231 is combined with the heater 207 through an adhesive layer 208. Preferably, the base 231 and the device plate 232 are made of high-thermal-conductivity metal, and in this embodiment, the base 231 and the device plate 232 are made of high-thermal-conductivity metal aluminum.

[0031] Further, as shown in Figure 2As shown, the base 231 is provided with a first cooling channel 233, which is communicated with an external first cooling source. The first cooling source outputs cooling liquid at a suitable process temperature. When the process requires 140 degrees, the first cooling liquid input into the first cooling channel 233 needs to be about 140 degrees. When the process temperature is less than -30 degrees, such as -60 degrees, the temperature of the first cooling liquid input into the first cooling channel 233 also needs to be less than -60 degrees. In addition, the temperature and flow of the first cooling liquid output by the first cooling source can be greatly adjusted according to the needs of the process, thereby achieving temperature adjustment of the substrate. The device plate 232 is used to fix the electrode assembly, and the device plate 232 is provided with a gas-tight structure such as a sealing ring (not shown in the figure). Through the device plate 232, the upper part of the device plate 232 in the reaction cavity 200 is a vacuum area, and the lower part of the device plate 232 is an atmospheric environment 211. At the same time, the device plate 232 is also provided with an electrical interface, a cooling liquid interface and a gas interface, so that the wires providing high-voltage direct-current power for the electrostatic chuck, the wires providing heating power output for the heater, the cooling pipeline transmitting the cooling liquid and the gas pipeline transmitting the cleaning gas are connected into the vacuum area of the reaction cavity 200 through the corresponding interfaces, while ensuring that the reaction cavity 200 maintains a vacuum state in the process.

[0032] Further, as shown in Figure 2 The electrode assembly further includes a plurality of lifting devices 205, the top end of each lifting device 205 passes through the top of the electrostatic chuck 202 to the back of the substrate W, and the bottom end of each lifting device 205 is arranged in the metal electrode 203. In some embodiments, the number of lifting devices 205 is 3. A plurality of lifting motors 206 are arranged in the metal electrode 203 and connected to the bottom end of the lifting device 205. An auxiliary control circuit 214 is embedded in the metal electrode 203 and electrically connected to each lifting motor 206 for controlling the lifting motor 206 to drive the lifting device 205 to rise or fall, thereby achieving the lifting of the substrate. Optionally, the auxiliary control circuit includes a PCB board, a control chip, etc.

[0033] In this embodiment, as shown in Figure 2As shown, each lifting device 205 is electrically connected to a corresponding lifting motor 206. Each lifting motor 206 is connected to the auxiliary control circuit 214 via a wire 261, which is also disposed within the metal electrode 203. In some embodiments, the number of lifting devices 205 is three; the corresponding number of lifting motors 206 is also three. The auxiliary control circuit 214 sends lifting commands to each lifting motor 206 to control the number of rotations of the motor rotor of each lifting motor 206, so that each lifting motor 206 drives the lifting of the corresponding connected lifting device 205. In other embodiments, only one lifting motor 206 can be set to control the lifting of multiple lifting devices 205 simultaneously. In this case, an additional transmission mechanism (not shown in the figure) is provided between the lifting devices 205 and the lifting motor 206. The transmission mechanism connects multiple lifting devices 205 to the lifting motor 206, thereby achieving the purpose of one lifting motor controlling the lifting of multiple lifting devices. By precisely controlling the number of rotations of the motor rotor of the lifting motor 206, the motor rotor converts its own number of rotations into the vertical lifting displacement of the lifting device 205, thereby realizing multi-level lifting control of the lifting device 205 and enabling the substrate height to meet different process requirements.

[0034] Specifically, in one embodiment, when it is necessary to remove polymer deposits in the pocket area enclosed by the back of the substrate W, the stepped portion of the edge ring 204, and the side of the electrostatic chuck 202, the auxiliary control circuit 214 sends a lifting command of 2 mm to the lifting motor 206. Upon receiving this command, the lifting motor 206 controls its rotor to rotate a corresponding number of revolutions, thereby causing the lifting device 205 to lift the substrate W vertically by 2 mm, thus removing the deposits from the pocket area. In another embodiment, when the substrate W needs to be removed from the reaction chamber 200, the auxiliary control circuit 214 sends a lifting command to raise it to the transport height. Upon receiving this command, the lifting motor 206 controls its rotor to rotate a corresponding number of revolutions, raising the substrate W to the transport height, allowing the robotic arm to enter the reaction chamber 200 and remove the substrate W from the reaction chamber. Compared with the prior art, the improved motor assembly provided by this invention can achieve different lifting heights of the substrate by controlling the number of rotations of the motor rotor.

[0035] Among them, such as Figure 2 As shown, the auxiliary control circuit 214 is connected to an external power supply 213 located below the device board 323, and the external power supply 213 provides operating power to the auxiliary control circuit 214; furthermore, in a preferred embodiment, a filter 212 is also provided between the auxiliary control circuit 214 and the external power supply 213.

[0036] Further, the equipment plate 232 or the base 231 is provided with a mounting groove for placing the lifting motor 206. Specifically, as shown in Figure 2 The jacking device 205 includes a guide channel 251 and a lifting pin 252. When the mounting groove is arranged on the equipment plate 232, the guide channel 251 passes through the base 231, the adhesive layer 208 and the heater 207 from the opening of the mounting groove on the equipment plate 232 in sequence and penetrates the electrostatic chuck 202. When the mounting groove is arranged on the base 231, the guide channel 251 passes through the adhesive layer 208 and the heater 207 from the opening of the mounting groove on the base 231 in sequence and penetrates the electrostatic chuck 202. The guide channel 251 is arranged in a staggered manner with the first cooling channel 233 in the base 231. The lifting pin 252 is arranged in the guide channel 251. The top end of the lifting pin 252 is in contact with the back of the wafer W from the top of the electrostatic chuck 202, and the bottom end is connected with the lifting motor 206. Through the driving of the lifting motor 206, the lifting pin 252 moves vertically along the guide channel 251 to jack up the wafer W.

[0037] When each jacking device 205 is electrically connected with one lifting motor 206, a plurality of mounting grooves are arranged on the equipment plate 232 or the base 231 in a one-to-one correspondence with the positions of the guide channels 251. Each mounting groove is arranged at the same horizontal level, and each mounting groove is used for placing one lifting motor 206 and the corresponding lifting pin 252. When the plurality of jacking devices 205 are connected with one lifting motor 206 through the transmission mechanism, only one mounting groove is arranged in the equipment plate 232 or the base 231 for placing the lifting motor 206, and a large enough space is reserved in the equipment plate 232 or the base 231 to accommodate the transmission mechanism. In a preferred embodiment, the mounting groove is arranged in the equipment plate 232, and the lifting motor 206 is arranged in the mounting groove to avoid the influence of extreme temperature changes of the base 231 on the working stability of the lifting motor 206. Since the transmission mechanism is a mechanical structure, the temperature change has little influence on it. Therefore, according to actual needs, the accommodation space can be arranged in the equipment plate 232 or the base 231. The bottom end of the lifting pin 252 is connected with the transmission mechanism. Through the rotation of the rotor of the lifting motor 206, the transmission mechanism is driven to move, and then the lifting pin 252 is raised or lowered to achieve the purpose of jacking up or lowering the wafer.

[0038] It should be noted that in each process of processing the substrate, the RF power source outputs RF power to at least one of the gas shower head assembly 201 or the electrode assembly, dissociates the reaction gas in the reaction chamber 200 to form plasma, and maintains the plasma between the gas shower head assembly 201 (upper electrode) and the electrode assembly (lower electrode) to make the reaction chamber 200 in the RF environment. Since the lifting motor 206 and the auxiliary control circuit 214 are electronic devices, they cannot work normally in the RF environment of the reaction chamber. Therefore, in the present application, the lifting motor 206 and the auxiliary control circuit 214 are arranged in the device plate 232 or the base 231 made of metal material. Since the RF has a significant skin effect, the downward RF current will flow along the outer wall of the device plate 232 or the base 231, so the lifting motor 206 and the auxiliary control circuit 214 located in the device plate 232 or the base 231 do not have significant current flowing through them, i.e. they are not in the RF environment, and thus can work normally. It can be understood that since there is still a large current flowing through the area away from the edge of the metal electrode (<10 mm), the bottom of the mounting groove accommodating the lifting motor 206 and the auxiliary control circuit 214 needs to be at least 10 mm away from the bottom of the metal electrode (the base 231 or the device plate 232).

[0039] In some processes, the substrate is at a temperature higher than 100°C or lower than -20°C, and at this time the temperature of the base will be correspondingly higher or lower. At such extreme temperatures, the auxiliary control circuit and the lifting motor can not work normally. Therefore, the present application also provides another embodiment of the electrode assembly, as shown in Figure 3 compared with the embodiment of the electrode assembly shown in Figure 2 , a heat insulation layer 320 is added and the structure of the device plate 321 is adjusted. Specifically, the heat insulation layer 320 is arranged between the base 310 and the device plate 321, which covers the entire bottom surface of the base 310 and thermally insulates the device plate 321 from the base 310 above. The heat insulation layer 320 is preferably made of low thermal conductivity ceramic material, such as quartz, silicate, aluminum nitride, etc. It can also be made of polymer material such as Teflon material that can withstand 200 degrees. By arranging the heat insulation layer 320 to separate the base 310 and the device plate 321, the temperature of the working environment of the auxiliary control circuit 316 and the lifting motor 318 is effectively ensured to be within the normal range. The thickness of the heat insulation layer 320 can also be selected according to actual needs, and can be selected to be 1-10 mm. When the temperature of the first cooling liquid in the base 310 is very high, a thicker heat insulation layer such as 10-30 mm can be selected to ensure better heat insulation effect.

[0040] As shown in Figure 3As shown, the lifting device (including the guide channel 319 and the lifting pin 317) in the electrode assembly of the embodiment passes through the heat insulation layer 320, the base 310, the adhesive layer 307, the heater 305 from the upper end of the equipment plate 321 in sequence, and is arranged through the electrostatic chuck 303, and the lifting device is arranged in a staggered manner with the first cooling channel 308 in the base 310. The first cooling channel 308 is communicated with the first cooling source C1, and the first cooling source C1 outputs the first cooling liquid suitable for the process temperature into the first cooling channel 308 to control the temperature of the base 310, so that the substrate W is at a suitable process temperature.

[0041] Further, in order to better control the temperature of the substrate and the temperature of the equipment plate, as shown in the drawings, Figure 3 As shown, the second cooling channel 322 is further arranged in the equipment plate 321, and the second cooling channel 322 is communicated with the second cooling source C3 outside, so that the temperature of the equipment plate 321 is maintained at room temperature or fluctuates around room temperature, such as 10-60 degrees, so as to ensure that the lifting motor 206 and the auxiliary control circuit 214 arranged in the equipment plate 321 can work normally. Specifically, when the lifting motor 318 and the auxiliary control circuit 316 are arranged in the equipment plate 321, the temperature of the base 310 can be controlled by the first cooling liquid in the plasma processing process, so that the base 310 has a high temperature or an extremely low temperature process temperature, or is adjusted to other temperatures according to requirements, and the equipment plate 321 below is maintained at room temperature. When the base 310 has a high temperature of 140 degrees, due to the existence of the heat insulation layer 310, the heat is conducted to the equipment plate 321 below at a low speed, effectively reducing the heat conduction between the base 310 and the equipment plate 321. Even when the heat is conducted to the equipment plate 321 through the heat insulation layer 310, the heat can be taken away by the second cooling channel 322 to ensure that the equipment plate 323 is in a normal working temperature environment, so as to achieve the purpose of auxiliary temperature control, so that the lifting motor 318 and the auxiliary control circuit 316 work in a normal temperature range.

[0042] In summary, compared with the prior art, the electrode assembly and the plasma processing device provided by the application arrange the lifting motor and the auxiliary control circuit in the metal electrode, control the rotation number of the motor rotor of the lifting motor through the auxiliary control circuit, and further satisfy the multi-stage lifting requirement of the substrate. Further, the heat insulation layer is arranged between the base and the equipment plate to slow down the heat conduction between the base and the equipment plate, and the second cooling channel is arranged in the equipment plate to assist in controlling the temperature of the equipment plate, thereby enhancing the temperature stability of the equipment plate, making the equipment plate in a normal working temperature, and reducing the damage of high temperature to the lifting motor and the auxiliary control circuit.

[0043] While the application has been described in detail and with reference to specific preferred embodiments thereof, it will be apparent to one skilled in the art that various modifications and alternatives can be employed without departing from the spirit and scope of the application. Accordingly, the scope of the application should be determined by the appended claims and their equivalents.

Claims

1. An electrode assembly disposed within a plasma processing apparatus, the electrode assembly being used to support a substrate to be processed, characterized in that, include: An electrostatic chuck is used to hold the substrate to be processed. A metal electrode is disposed below the electrostatic chuck; Several lifting devices, the top end of each lifting device protruding from the top of the electrostatic chuck to the back of the substrate, and the bottom end of each lifting device being disposed inside the metal electrode; A lifting motor is installed inside the metal electrode and connected to the bottom end of the lifting device; An auxiliary control circuit is embedded in the metal electrode. The auxiliary control circuit is electrically connected to the lifting motor and is used to control the lifting motor to drive the lifting device to rise or fall, so as to realize the lifting of the substrate.

2. The electrode assembly as described in claim 1, characterized in that, The metal electrode includes: a base disposed below the electrostatic chuck, and a device plate disposed below the base.

3. The electrode assembly as described in claim 1, characterized in that, Each of the lifting devices is electrically connected to one of the lifting motors.

4. The electrode assembly as described in claim 1 or 3, characterized in that, Each of the lifting devices includes a guide channel and a lifting pin; the guide channel is disposed through the electrostatic chuck, and the lifting pin is disposed within the guide channel for lifting the substrate.

5. The electrode assembly as described in claim 4, characterized in that, The metal electrode includes: a base disposed below the electrostatic chuck, and a device plate disposed below the base; the device plate or the base is provided with a mounting groove for placing the lifting motor; the mounting groove is provided in a one-to-one correspondence with the position of the guide channel.

6. The electrode assembly as described in claim 2, characterized in that, The auxiliary control circuit is connected to an external power supply located below the device board.

7. The electrode assembly as claimed in claim 6, characterized in that, A filter is also provided between the auxiliary control circuit and the external power supply.

8. The electrode assembly as claimed in claim 1, characterized in that, The auxiliary control circuit includes a PCB board.

9. The electrode assembly as claimed in claim 2, characterized in that, The base includes a first cooling channel, which is connected to an external first cooling source for temperature control of the substrate.

10. The electrode assembly as claimed in claim 2, characterized in that, A heat insulation layer is provided between the base and the equipment plate.

11. The electrode assembly as claimed in claim 10, characterized in that, The device board includes a second cooling channel, which is connected to an external second cooling source for auxiliary temperature control of the substrate.

12. The electrode assembly as claimed in claim 10, characterized in that, The insulation layer is made of at least one of a low thermal conductivity ceramic material or a Teflon material, wherein the low thermal conductivity ceramic material includes at least one of quartz, silicate, and aluminum nitride.

13. The electrode assembly as claimed in claim 10, characterized in that, The thickness of the insulation layer is 1 mm to 30 mm.

14. The electrode assembly as claimed in claim 2, characterized in that, The base and / or the device plate are made of a high thermal conductivity metal, including aluminum.

15. A plasma processing apparatus, characterized in that, include: reaction chamber; The electrode assembly as described in any one of claims 1 to 14 is located at the bottom of the reaction chamber and is used to support the substrate to be processed; A gas supply assembly is disposed opposite to the electrode assembly; The gas supply assembly introduces reactive gas into the reaction chamber to perform plasma etching on the substrate.

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