Large-current solid-state power control circuit based on high-voltage platform and operation method of large-current solid-state power control circuit

Abstract

The invention discloses a large-current solid-state power control circuit based on a high-voltage platform and an operation method of the large-current solid-state power control circuit, and relates to the technical field of aviation power distribution. The system comprises an SSPC control module and a power loop. The SSPC module comprises an isolation power supply module, a microprocessor module, a CANFD communication module, a programmable IGBT isolation driving module, a current isolation acquisition module, a voltage isolation acquisition module and a short circuit protection module. The power module comprises a back-to-back IGBT module, a shunt, a fly-wheel diode and a load. The device is suitable for the field of aviation and low-altitude eVOTL, adopts a back-to-back IGBT power device and is matched with a corresponding control module, state detection, intelligent control and protection of a load are realized under the conditions of 0-800V high voltage and large current of a single channel, and the requirements of a future high-power-density power distribution system are met.

Description

Technical Field

[0001] The present invention belongs to the technical field of aviation power distribution system, and in particular relates to a high-current solid-state power control circuit based on a high-voltage platform and an operation method thereof. Background Art

[0002] With the continuous development of military and civilian aircraft, the solid-state power controller, whose English name is Solid State Power Controller (SSPC), has become the core component of multi-electric and all-electric power distribution systems. It has been used in aircraft for decades. At present, SSPC technology usually uses MOS tubes as the main power devices to realize the on-off control of loads, but it is limited by its own materials, resulting in the load withstand voltage cannot meet the high voltage level requirements. Although silicon carbide MOS tubes can meet high voltage requirements, in order to meet the single-channel large current flow capacity, several silicon carbide MOS tubes need to be connected in parallel, resulting in increased cost, volume and weight. IGBT combines the advantages of triode over-current and MOS tube fast switching speed. Under the 0-800V high voltage system, a single IGBT realizes the rapid protection of large current loads and real-time monitoring of status. Summary of the invention

[0003] In order to solve the deficiencies of the above-mentioned prior art and to address the above-mentioned technical problems, a high-current solid-state power controller device based on a high-voltage platform is proposed to meet the high voltage and high current requirements of future loads in the fields of aviation, low-altitude eVOTL, etc.

[0004] In view of this, according to one aspect of an embodiment of the present invention, a high-current solid-state power control circuit based on a high-voltage platform is provided, comprising: an SSPC control module and a power circuit; the SSPC module comprises an isolated power supply module, a microprocessor module, a CANFD communication module, a programmable IGBT isolation drive module, a current isolation acquisition module, a voltage isolation acquisition module, and a short-circuit protection module; the power module comprises a back-to-back IGBT, a shunt, and a freewheeling diode;

[0005] The isolated power supply module is used to provide power supply to the microprocessor module, CANFD communication module, programmable IGBT isolation drive module, current isolation acquisition module, voltage isolation acquisition module, and short-circuit protection module respectively;

[0006] The CANFD communication module is used to receive instructions sent by an external host computer and transmit them to the microprocessor module; the microprocessor module is used to parse the instructions and generate IGBT configuration instructions. The programmable IGBT isolation drive module receives the IGBT configuration instructions and performs on-off control on the back-to-back IGBT.

[0007] The current isolation acquisition module is used to collect the current of the back-to-back IGBT through the shunt, and transmit the collected current value to the microprocessor module, and the microprocessor module uploads the collected current value to the external host computer;

[0008] The voltage isolation acquisition module is used to collect the voltage value between 800V+ and 800V-, and transmit the collected voltage value to the microprocessor module, and the microprocessor module uploads the collected voltage value to the external host computer;

[0009] The short-circuit protection module includes a comparator, and the current collected by the shunt enters the comparator through the current isolation collection module; when the comparator level is flipped, the short-circuit protection module controls the programmable IGBT isolation drive module to turn off the back-to-back IGBT, and reports the load status to the microprocessor module;

[0010] The back-to-back IGBT is used to control the on / off of the load and 800V+;

[0011] The freewheeling diode is used to discharge the reverse electromotive force generated when the back-to-back IGBT is turned off.

[0012] Optionally, the isolated power supply module includes a first conversion chip, a second conversion chip and a third conversion chip. The input terminal of the first conversion chip is connected to a 12V input voltage, and its output terminal is connected to the programmable IGBT isolation drive module; the input terminal of the second conversion chip is connected to a 12V input voltage, and its output terminal is connected to the current isolation acquisition module and the voltage isolation acquisition module; the input terminal of the third conversion chip is connected to a 12V input voltage, and the output terminal of the third conversion chip is connected to the microprocessor module, the CANFD communication module, and the short-circuit protection module.

[0013] Optionally, the microprocessor module includes a DSP main control chip, an EEPROM chip, and a watchdog circuit. The DSP main control chip is used to control the opening and closing of the load, to collect voltage and current status, and to protect the load in the event of overcurrent or overvoltage conditions. The EEPROM chip is used to store calibration parameters such as voltage and current. The watchdog circuit is used to monitor the working status of the DSP chip in real time.

[0014] Optionally, the programmable IGBT isolation driver module can receive IGBT configuration instructions through the SPI bus of the microprocessor module, and perform on-off control and protection on the IGBT power device.

[0015] Optionally, the current isolation acquisition module includes an isolation acquisition chip and an operational amplifier circuit. The voltage resistance parameter of the isolation acquisition chip is 3750V, which can meet the high voltage usage requirements. After the current signal of the shunt is converted into a voltage signal, it is input into the isolation acquisition chip for 41 times amplification, and then sent to the operational amplifier circuit for 2 times amplification. After amplification, the signal is sent to the microprocessor module for real-time analysis and processing.

[0016] Optionally, the voltage isolation acquisition module includes a high-voltage power resistor, an isolation acquisition chip and an operational amplifier circuit. The high-voltage power resistor is used to divide the input high-voltage power voltage into a voltage range that can be collected by the microprocessor module. Three high-voltage power resistors with different resistance values ​​are used for voltage division. The withstand voltage of a single high-voltage power resistor is 1000V, which can cover a voltage range of 0-800V. The divided voltage signal passes through the isolation acquisition chip and then is sent to the operational amplifier circuit for amplification. The voltage signal after two-stage amplification is sent to the microprocessor module for analysis and processing.

[0017] Optionally, the short-circuit protection module includes a comparator circuit, which sets a short-circuit protection threshold point and compares it with the collected current signal. If the collected current is greater than the set short-circuit protection threshold, the level of the comparator output is reversed and sent to the programmable IGBT isolation drive module to turn off the back-to-back IGBT, thereby achieving the purpose of protecting the load.

[0018] Optionally, the cable is suitable for a voltage environment of 0-800V high voltage.

[0019] Optionally, a 12V working power supply enters the input end of the isolated power supply module inside the product, the output end of the isolated power supply module is connected to the input end of the voltage isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the programmable IGBT isolation drive module, the output end of the isolated power supply module is connected to the input end of the short-circuit protection, the output end of the isolated power supply module is connected to the input end of the current isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the microprocessor module, and the output end of the isolated power supply module is connected to the input end of the CANFD communication module. The input end of the microprocessor module is connected to the output end of the programmable IGBT isolation drive module, the output end of the CANFD communication module is connected to the input end of the microprocessor module, the output end of the voltage isolation acquisition module is connected to the input end of the microprocessor module, the output end of the programmable IGBT isolation drive module is connected to the C-level and E-level of the back-to-back IGBT, the output end of the short-circuit protection module is connected to the input end of the microprocessor module, the output end of the short-circuit protection module is connected to the input end of the programmable IGBT isolation drive module, the output end of the current isolation acquisition module is connected to the input end of the short-circuit protection module, the positive and negative ends of the shunt are connected to the input end of the current isolation acquisition module, the C-level of the back-to-back IGBT is connected to the positive pole of the high voltage power supply, the E-level of the back-to-back IGBT is connected to the positive end of the shunt, the negative end of the shunt is connected to the freewheeling diode and the load at the same time, and the other end of the freewheeling diode is connected to the negative pole of the high voltage power supply.

[0020] According to another aspect of an embodiment of the present invention, there is also provided an operating method of a high-current solid-state power control circuit based on a high-voltage platform, using any of the circuits described, including: the control module is powered by a 12V low-voltage power supply, the 12V low-voltage power supply is converted into different voltage signals through an isolation power supply module, and power is provided to a microprocessor module, a CANFD communication module, a programmable IGBT isolation drive module, a current isolation acquisition module, a voltage isolation acquisition module, and a short-circuit protection module respectively; the CANFD communication module receives control and query instructions issued by a host computer, and sends the instructions to the microprocessor module for parsing and processing; the current isolation acquisition module and the voltage isolation acquisition module The block collects and reports the current and voltage signals in real time. The programmable IGBT isolation drive module receives the control instructions issued by the microprocessor module through the bus to complete the control of the back-to-back IGBT. The short-circuit protection module determines in real time whether the current of the load exceeds the set threshold, actively completes the shutdown control of the back-to-back IGBT, and reports the shutdown status to the microprocessor module. The shunt collects the current signal of the load in real time and transmits it to the current isolation acquisition module. After receiving the control instruction, the back-to-back IGBT completes the flow of large current of single-channel load under high voltage. The freewheeling diode discharges the reverse electromotive force generated by the load at the moment of shutdown to protect the IGBT power device.

[0021] The present invention adopts the above technical solution, which has the following beneficial effects:

[0022] The present invention is applicable to a high-current solid-state power controller device based on a high-voltage platform, which is used in the fields of aviation, low-altitude eVOTL, etc. By adopting back-to-back IGBT power devices and matching corresponding control modules, under the conditions of single-channel high voltage and high current, the state detection, intelligent control and protection of the load can be realized to meet the requirements of future high-power density distribution systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a structural schematic diagram of a high-current solid-state power controller device based on a high-voltage platform of the present invention. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] According to one aspect of an embodiment of the present invention, a high-current solid-state power control circuit based on a high-voltage platform is provided, such as Figure 1 As shown, it includes: SSPC control module and power circuit; SSPC module includes isolated power module, microprocessor module, CANFD communication module, programmable IGBT isolation drive module, current isolation acquisition module, voltage isolation acquisition module, short circuit protection module; power module includes back-to-back IGBT, shunt, freewheeling diode;

[0026] The isolated power supply module is used to provide power supply to the microprocessor module, CANFD communication module, programmable IGBT isolation drive module, current isolation acquisition module, voltage isolation acquisition module and short circuit protection module respectively;

[0027] The CANFD communication module is used to receive instructions from an external host computer and transmit them to the microprocessor module; the microprocessor module is used to parse the instructions and generate IGBT configuration instructions. The programmable IGBT isolation drive module receives the IGBT configuration instructions and performs on-off control of the back-to-back IGBTs.

[0028] The current isolation acquisition module is used to collect the current of the back-to-back IGBT through the shunt, and transmit the collected current value to the microprocessor module, and the microprocessor module uploads the collected current value to the external host computer;

[0029] The voltage isolation acquisition module is used to collect the voltage value between 800V+ and 800V-, and transmit the collected voltage value to the microprocessor module, and the microprocessor module uploads the collected voltage value to the external host computer;

[0030] The short-circuit protection module includes a comparator. The current collected by the shunt enters the comparator through the current isolation collection module. When the comparator level is flipped, the short-circuit protection module controls the programmable IGBT isolation drive module to turn off the back-to-back IGBT and report the load status to the microprocessor module.

[0031] Back-to-back IGBTs are used to control the on / off of the load and 800V+;

[0032] The freewheeling diode is used to discharge the reverse electromotive force generated when the back-to-back IGBT is turned off.

[0033] Optionally, the isolated power supply module includes a first conversion chip, a second conversion chip and a third conversion chip. The input end of the first conversion chip is connected to a 12V input voltage, and its output end is connected to a programmable IGBT isolation drive module; the input end of the second conversion chip is connected to a 12V input voltage, and its output end is connected to a current isolation acquisition module and a voltage isolation acquisition module; the input end of the third conversion chip is connected to a 12V input voltage, and the output end of the third conversion chip is connected to a microprocessor module, a CANFD communication module, and a short-circuit protection module.

[0034] Optionally, the microprocessor module includes a DSP main control chip, an EEPROM chip, and a watchdog circuit. The DSP main control chip is used to control the opening and closing of the load, collect the voltage and current status, and protect the load under overcurrent or overvoltage conditions. The EEPROM chip is used to store calibration parameters such as voltage and current. The watchdog circuit is used to monitor the working status of the DSP chip in real time.

[0035] Optionally, the programmable IGBT isolation driver module can receive IGBT configuration instructions through the SPI bus of the microprocessor module, and perform on-off control and protection on the IGBT power device.

[0036] Optionally, the current isolation acquisition module includes an isolation acquisition chip and an operational amplifier circuit. The voltage resistance parameter of the isolation acquisition chip is 3750V. After the current signal passes through the shunt and is converted into a voltage signal, it is input into the isolation acquisition chip for 41 times amplification, and then sent to the operational amplifier circuit for 2 times amplification. After amplification, the signal is sent to the microprocessor module for real-time analysis and processing.

[0037] Optionally, the voltage isolation acquisition module includes a high-voltage power resistor, an isolation acquisition chip and an operational amplifier circuit. The high-voltage power resistor is used to divide the input high-voltage power voltage into a voltage range that can be collected by the microprocessor module. Three high-voltage power resistors with different resistance values ​​are used for voltage division. The withstand voltage of a single high-voltage power resistor is 1000V. The divided voltage signal passes through the isolation acquisition chip and then is sent to the operational amplifier circuit for amplification. The voltage signal after two-stage amplification is sent to the microprocessor module for analysis and processing.

[0038] Optionally, the short-circuit protection module includes a comparator circuit, which sets a short-circuit protection threshold point and compares it with the collected current signal. If the collected current is greater than the set short-circuit protection threshold, the level of the comparator output is flipped and sent to the programmable IGBT isolation drive module to turn off the back-to-back IGBT.

[0039] Optionally, the cable is suitable for a voltage environment of 0-800V high voltage.

[0040] Optionally, a 12V working power supply enters the input end of the isolated power supply module inside the product, the output end of the isolated power supply module is connected to the input end of the voltage isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the programmable IGBT isolation drive module, the output end of the isolated power supply module is connected to the input end of the short-circuit protection, the output end of the isolated power supply module is connected to the input end of the current isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the microprocessor module, and the output end of the isolated power supply module is connected to the input end of the CANFD communication module. The input end of the microprocessor module is connected to the output end of the programmable IGBT isolation drive module, the output end of the CANFD communication module is connected to the input end of the microprocessor module, the output end of the voltage isolation acquisition module is connected to the input end of the microprocessor module, the output end of the programmable IGBT isolation drive module is connected to the C-level and E-level of the back-to-back IGBT, the output end of the short-circuit protection module is connected to the input end of the microprocessor module, the output end of the short-circuit protection module is connected to the input end of the programmable IGBT isolation drive module, the output end of the current isolation acquisition module is connected to the input end of the short-circuit protection module, the positive and negative ends of the shunt are connected to the input end of the current isolation acquisition module, the C-level of the back-to-back IGBT is connected to the positive pole of the high voltage power supply, the E-level of the back-to-back IGBT is connected to the positive end of the shunt, the negative end of the shunt is connected to the freewheeling diode and the load at the same time, and the other end of the freewheeling diode is connected to the negative pole of the high voltage power supply.

[0041] According to another aspect of an embodiment of the present invention, there is also provided an operating method for a high-current solid-state power control circuit based on a high-voltage platform, wherein any circuit used includes: a control module is powered by a 12V low-voltage power supply, the 12V low-voltage power supply is converted into different voltage signals through an isolation power supply module, and power is provided to a microprocessor module, a CANFD communication module, a programmable IGBT isolation drive module, a current isolation acquisition module, a voltage isolation acquisition module, and a short-circuit protection module, respectively; the CANFD communication module receives control and query instructions issued by a host computer, and sends the instructions to the microprocessor module for parsing and processing; the current isolation acquisition module and the voltage isolation acquisition module The current and voltage signals are collected and reported in real time. The programmable IGBT isolation drive module receives the control instructions issued by the microprocessor module through the bus to complete the control of the back-to-back IGBT. The short-circuit protection module determines in real time whether the current of the load exceeds the set threshold, actively completes the shutdown control of the back-to-back IGBT, and reports the shutdown status to the microprocessor module. The shunt collects the current signal of the load in real time and transmits it to the current isolation acquisition module. After receiving the control instruction, the back-to-back IGBT completes the flow of large current of the single-channel load under high voltage. The freewheeling diode discharges the reverse electromotive force generated by the load at the moment of shutdown to protect the IGBT power device.

[0042] Example

[0043] A high-current solid-state power control method based on a high-voltage platform, wherein the control module is powered by a 12V low-voltage power supply, and the 12V low-voltage power supply is converted into different voltage signals through an isolation power supply module, which respectively provide power supply for a microprocessor module, a CANFD communication module, a programmable IGBT isolation drive module, a current isolation acquisition module, a voltage isolation acquisition module, and a short-circuit protection module. The CANFD communication module receives the control and query instructions issued by the host computer, and sends the instructions to the microprocessor module for parsing and processing. The current isolation acquisition module and the voltage isolation acquisition module collect and report the current and voltage signals in real time. The microprocessor module is used for communication data transmission and reception between the CANFD communication module, and completes the on-off control of the load and the current and voltage signal collection. When a short circuit occurs, the power is cut off in time to complete the protection of the load. The programmable IGBT isolation drive module receives the control instructions issued by the microprocessor module through the bus, and completes the control of the back-to-back IGBT. The short-circuit protection module is used to determine in real time whether the current of the load exceeds the set threshold, actively completes the shutdown control of the back-to-back IGBT, and reports the shutdown state to the microprocessor module. The shunt is used to collect the current signal of the load in real time and transmit it to the current isolation acquisition module. After receiving the control command, the back-to-back IGBT completes the flow of high current of the single-channel load under high voltage. The freewheeling diode is used to discharge the reverse electromotive force generated by the load at the moment of shutdown to protect the IGBT power device.

[0044] A high-current solid-state power control circuit based on a high-voltage platform has a specific connection structure, a 12V working power supply enters the input end of the isolated power module inside the product, the output end of the isolated power module is connected to the input end of the voltage isolation acquisition module, the output end of the isolated power module is connected to the input end of the programmable IGBT isolation drive module, the output end of the isolated power module is connected to the input end of the short-circuit protection, the output end of the isolated power module is connected to the input end of the current isolation acquisition module, the output end of the isolated power module is connected to the input end of the microprocessor module, and the output end of the isolated power module is connected to the input end of the CANFD communication module. The input end of the microprocessor module is connected to the output end of the programmable IGBT isolation drive module, the output end of the CANFD communication module is connected to the input end of the microprocessor module, the output end of the voltage isolation acquisition module is connected to the input end of the microprocessor module, the output end of the programmable IGBT isolation drive module is connected to the C-level and E-level of the back-to-back IGBT, the output end of the short-circuit protection module is connected to the input end of the microprocessor module, the output end of the short-circuit protection module is connected to the input end of the programmable IGBT isolation drive module, the output end of the current isolation acquisition module is connected to the input end of the short-circuit protection module, the positive and negative ends of the shunt are connected to the input end of the current isolation acquisition module, the C-level of the back-to-back IGBT is connected to the positive pole of the high voltage power supply, the E-level of the back-to-back IGBT is connected to the positive end of the shunt, the negative end of the shunt is connected to the freewheeling diode and the load at the same time, and the other end of the freewheeling diode is connected to the negative pole of the high voltage power supply.

[0045] The above is only a specific embodiment of the present invention, and the present invention is described in detail. The unexplained part is a conventional technology. However, the protection scope of the present invention is not limited to this. Any changes or substitutions that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. The protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A high current solid-state power control circuit based on a high voltage platform, characterized in that: include: The SSPC consists of two parts: control module and power circuit; the SSPC module includes an isolated power supply module, a microprocessor module, a CANFD communication module, a programmable IGBT isolation drive module, a current isolation acquisition module, a voltage isolation acquisition module, and a short-circuit protection module; the power module includes a back-to-back IGBT, a shunt, and a freewheeling diode; The isolated power supply module is used to provide power supply to the microprocessor module, CANFD communication module, programmable IGBT isolation drive module, current isolation acquisition module, voltage isolation acquisition module, and short-circuit protection module respectively; The CANFD communication module is used to receive instructions issued by an external host computer and transmit them to the microprocessor module; The microprocessor module is used to parse the instructions and generate IGBT configuration instructions. The programmable IGBT isolation drive module receives the IGBT configuration instructions and performs on-off control on the back-to-back IGBTs. The current isolation acquisition module is used to collect the current of the back-to-back IGBT through the shunt, and transmit the collected current value to the microprocessor module, and the microprocessor module uploads the collected current value to the external host computer; The voltage isolation acquisition module is used to collect the voltage value between 800V+ and 800V-, and transmit the collected voltage value to the microprocessor module, and the microprocessor module uploads the collected voltage value to the external host computer; The short-circuit protection module includes a comparator, and the current collected by the shunt enters the comparator through the current isolation collection module; when the comparator level is flipped, the short-circuit protection module controls the programmable IGBT isolation drive module to turn off the back-to-back IGBT, and reports the load status to the microprocessor module; The back-to-back IGBT is used to control the on / off of the load and 800V+; The freewheeling diode is used to discharge the reverse electromotive force generated when the back-to-back IGBT is turned off.

2. The circuit according to claim 1, characterized in that The isolated power supply module includes a first conversion chip, a second conversion chip and a third conversion chip. The input end of the first conversion chip is connected to a 12V input voltage, and its output end is connected to the programmable IGBT isolation drive module; the input end of the second conversion chip is connected to a 12V input voltage, and its output end is connected to the current isolation acquisition module and the voltage isolation acquisition module; the input end of the third conversion chip is a 12V input voltage, and the output end of the third conversion chip is connected to the microprocessor module, the CANFD communication module, and the short-circuit protection module.

3. The circuit according to claim 1, characterized in that The microprocessor module includes a DSP main control chip, an EEPROM chip, and a watchdog circuit. The DSP main control chip is used to control the opening and closing of the load, retrieve the voltage and current status, and protect the load under overcurrent or overvoltage conditions. The EEPROM chip is used to store calibration parameters such as voltage and current. The watchdog circuit is used to monitor the working status of the DSP chip in real time.

4. The circuit according to claim 1, characterized in that The programmable IGBT isolation drive module can receive IGBT configuration instructions through the SPI bus of the microprocessor module, and perform on-off control and protection on the IGBT power device.

5. The circuit according to claim 1, characterized in that The current isolation acquisition module includes an isolation acquisition chip and an operational amplifier circuit. The voltage resistance parameter of the isolation acquisition chip is 3750V. After the current signal is converted into a voltage signal through the shunt, it is input into the isolation acquisition chip for 41 times amplification, and then sent to the operational amplifier circuit for 2 times amplification. After amplification, the signal is sent to the microprocessor module for real-time analysis and processing.

6. The circuit according to claim 1, characterized in that The voltage isolation acquisition module includes a high-voltage power resistor, an isolation acquisition chip and an operational amplifier circuit. The high-voltage power resistor is used to divide the input high-voltage power voltage into a voltage range that can be collected by the microprocessor module. Three high-voltage power resistors with different resistance values ​​are used for voltage division. The withstand voltage of a single high-voltage power resistor is 1000V. The divided voltage signal passes through the isolation acquisition chip and then is sent to the operational amplifier circuit for amplification. The voltage signal after two-stage amplification is sent to the microprocessor module for analysis and processing.

7. The circuit according to claim 1, characterized in that The short-circuit protection module includes a comparator circuit, which sets a short-circuit protection threshold point and compares it with the collected current signal. If the collected current is greater than the set short-circuit protection threshold, the level of the comparator output is reversed and sent to the programmable IGBT isolation drive module to turn off the back-to-back IGBT.

8. The circuit according to claim 1, characterized in that The cable is suitable for a voltage environment of 0-800V high voltage.

9. The circuit according to claim 1, characterized in that The 12V working power supply enters the input end of the isolated power supply module inside the product, the output end of the isolated power supply module is connected to the input end of the voltage isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the programmable IGBT isolation drive module, the output end of the isolated power supply module is connected to the input end of the short-circuit protection, the output end of the isolated power supply module is connected to the input end of the current isolation acquisition module, the output end of the isolated power supply module is connected to the input end of the microprocessor module, and the output end of the isolated power supply module is connected to the input end of the CANFD communication module. The input end of the microprocessor module is connected to the output end of the programmable IGBT isolation drive module, the output end of the CANFD communication module is connected to the input end of the microprocessor module, the output end of the voltage isolation acquisition module is connected to the input end of the microprocessor module, the output end of the programmable IGBT isolation drive module is connected to the C-level and E-level of the back-to-back IGBT, the output end of the short-circuit protection module is connected to the input end of the microprocessor module, the output end of the short-circuit protection module is connected to the input end of the programmable IGBT isolation drive module, the output end of the current isolation acquisition module is connected to the input end of the short-circuit protection module, the positive and negative ends of the shunt are connected to the input end of the current isolation acquisition module, the C-level of the back-to-back IGBT is connected to the positive pole of the high voltage power supply, the E-level of the back-to-back IGBT is connected to the positive end of the shunt, the negative end of the shunt is connected to the freewheeling diode and the load at the same time, and the other end of the freewheeling diode is connected to the negative pole of the high voltage power supply.

10. A method for operating a high-current solid-state power control circuit based on a high-voltage platform, using any circuit as claimed in claims 1 to 9, comprising: The control modules are powered by a 12V low-voltage power supply. The 12V low-voltage power supply is converted into different voltage signals through the isolation power supply module, which provide power supply for the microprocessor module, CANFD communication module, programmable IGBT isolation drive module, current isolation acquisition module, voltage isolation acquisition module, and short-circuit protection module respectively. The CANFD communication module receives the control and query instructions issued by the host computer, and sends the instructions to the microprocessor module for analysis and processing. The current isolation acquisition module and the voltage isolation acquisition module collect and report the current and voltage signals in real time. The programmable IGBT isolation drive module receives the control instructions issued by the microprocessor module through the bus to complete the control of the back-to-back IGBT. The short-circuit protection module determines in real time whether the current of the load exceeds the set threshold, actively completes the shutdown control of the back-to-back IGBT, and reports the shutdown status to the microprocessor module. The shunt collects the current signal of the load in real time and transmits it to the current isolation acquisition module. After receiving the control instruction, the back-to-back IGBT completes the flow of large current of the single-channel load under high voltage, and the freewheeling diode discharges the reverse electromotive force generated by the load at the moment of shutdown to protect the IGBT power device.

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