Low-noise amplifier, radio frequency front-end module and electronic equipment

Abstract

The embodiment of the invention provides a low-noise amplifier, a radio frequency front-end module and electronic equipment. The low-noise amplifier comprises an amplifying circuit, a plurality of signal input ends and a plurality of electrostatic protection circuits, the signal input ends are connected with the input end of the amplifying circuit, the signal input ends are used for inputting radio frequency signals of corresponding frequency bands, and the amplifying circuit is used for amplifying the radio frequency signals input by the signal input ends; the first end of the electrostatic protection circuit is connected with the corresponding signal input end, and the second end of the electrostatic protection circuit is grounded; wherein the sizes of the electrostatic protection circuits connected with the at least two signal input ends are different. The electrostatic protection circuits with different sizes are specifically arranged for different signal input ends, so that the space occupied by the electrostatic protection circuits in the low-noise amplifier can be reduced, and the miniaturization design of the low-noise amplifier is facilitated.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a low noise amplifier, a radio frequency front-end module, and an electronic device. Background Art

[0002] Low noise amplifier (LNA) is an important component in RF chips such as RF front-end modules, which is used to at least receive RF signals transmitted from the antenna and amplify the received RF signals. An electrostatic protection circuit is usually set at the input end of the low noise amplifier to play an electrostatic protection role; for example, to prevent static electricity from causing excessive instantaneous voltage at the RF input end and causing damage to the low noise amplifier. The electrostatic protection circuit configured in the low noise amplifier in the related art is not conducive to the miniaturization design of the low noise amplifier. Summary of the invention

[0003] The present application provides a low-noise amplifier, a radio frequency front-end module, and an electronic device, which can reduce the space occupied by an electrostatic protection circuit in the low-noise amplifier and is conducive to the miniaturized design of the low-noise amplifier.

[0004] In a first aspect, an embodiment of the present application provides a low noise amplifier, the low noise amplifier comprising:

[0005] Amplifier circuit;

[0006] A plurality of signal input terminals, the plurality of signal input terminals are connected to the input terminal of the amplifying circuit, the signal input terminals are used to input radio frequency signals of corresponding frequency bands, and the amplifying circuit is used to amplify the radio frequency signals input by the signal input terminals;

[0007] A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a corresponding signal input end, and a second end of the electrostatic protection circuit is grounded;

[0008] Among them, at least two of the signal input terminals are respectively connected to electrostatic protection circuits of different sizes.

[0009] In a second aspect, an embodiment of the present application provides a low noise amplifier, the low noise amplifier comprising:

[0010] Amplifier circuit;

[0011] A plurality of signal input terminals, the plurality of signal input terminals are connected to the input terminal of the amplifying circuit, the signal input terminals are used to input radio frequency signals of corresponding frequency bands, and the amplifying circuit is used to amplify the radio frequency signals input by the signal input terminals;

[0012] A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a corresponding signal input end, and a second end of the electrostatic protection circuit is grounded;

[0013] Among them, at least two of the signal input terminals are respectively connected to electrostatic protection circuits having different electrostatic protection performances.

[0014] In a third aspect, an embodiment of the present application provides a radio frequency front-end module, wherein the radio frequency front-end module includes the aforementioned low noise amplifier.

[0015] In a fourth aspect, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module comprising:

[0016] A low noise amplifier, the low noise amplifier comprising an amplifier circuit and a plurality of signal input terminals, the plurality of signal input terminals being connected to an input terminal of the amplifier circuit;

[0017] A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a signal input end corresponding to the electrostatic protection circuit, and a second end of the electrostatic protection circuit is grounded;

[0018] Wherein, at least two of the electrostatic protection circuits have different sizes and / or electrostatic protection performances.

[0019] In a fifth aspect, an embodiment of the present application provides an electronic device, which includes the aforementioned low-noise amplifier; or includes the aforementioned radio frequency front-end module.

[0020] The low-noise amplifier, radio frequency front-end module, and electronic device provided by the embodiment of the present application, wherein the low-noise amplifier includes an amplifier circuit, multiple signal input terminals, and multiple electrostatic protection circuits; the multiple signal input terminals are connected to the input terminal of the amplifier circuit, the signal input terminal is used to input the radio frequency signal of the corresponding frequency band, and the amplifier circuit is used to amplify the radio frequency signal input by the signal input terminal; the first end of the electrostatic protection circuit is connected to the corresponding signal input terminal, and the second end of the electrostatic protection circuit is grounded; wherein the size of the electrostatic protection circuit connected to at least two of the signal input terminals is different. By setting electrostatic protection circuits of different sizes for different signal input terminals in a targeted manner, the space occupied by the electrostatic protection circuit in the low-noise amplifier can be reduced, which is conducive to the miniaturization design of the low-noise amplifier.

[0021] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 is a schematic block diagram of a low noise amplifier provided in an embodiment of the present application;

[0024] Figure 2 and Figure 3 is a schematic diagram of an amplifier circuit in some embodiments of the present application;

[0025] Figure 4a and Figure 4b is a schematic diagram of an electrostatic protection circuit in some embodiments of the present application;

[0026] Figure 5 is a schematic diagram of a diode in an electrostatic protection circuit in some embodiments of the present application;

[0027] Figure 6 is a schematic block diagram of a radio frequency front-end module in some embodiments of the present application;

[0028] Figure 7 is a schematic block diagram of a low noise amplifier provided in another embodiment of the present application;

[0029] Figure 8 is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application;

[0030] Fig. 9 is a schematic block diagram of a radio frequency front-end module in one embodiment of the present application;

[0031] Fig.10 is a schematic block diagram of a radio frequency front-end module provided in another embodiment of the present application;

[0032] Fig.11 It is a schematic block diagram of an electronic device provided in an embodiment of the present application.

[0033] Description of reference numerals:

[0034] 100, low noise amplifier; 10, amplifier circuit; 11, first amplifier branch; 12, second amplifier branch; 13, third amplifier branch; 21, first electrostatic protection circuit; 22, second electrostatic protection circuit; 23, third electrostatic protection circuit; 201, first diode branch; 202, second diode branch; IN1, first signal input terminal; IN2, second signal input terminal; IN3, third signal input terminal; 31, first electrode; 311, first electrode finger; 32, second electrode; 321, second electrode finger; 200, substrate; 210, external signal input port; 220, antenna port; 230, filter. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0036] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0037] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0038] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0039] See also Figure 1 , Figure 1 is a schematic block diagram of a low noise amplifier 100 provided in an embodiment of the present application.

[0040] like Figure 1As shown, the low noise amplifier 100 includes: an amplifier circuit 10, a plurality of signal input terminals and a plurality of electrostatic protection circuits. Among them, the plurality of signal input terminals at least include a first signal input terminal IN1 and a second signal input terminal IN2, and the plurality of electrostatic protection circuits at least include a first electrostatic protection circuit 21 and a second electrostatic protection circuit 22; of course, it is not limited thereto, for example, the plurality of signal input terminals may also include a third signal input terminal IN3, and may further include a fourth signal input terminal, a fifth signal input terminal, etc.; the plurality of electrostatic protection circuits may also include a third electrostatic protection circuit 23, and may further include a fourth electrostatic protection circuit, a fifth electrostatic protection circuit, etc.

[0041] In some embodiments, the terms "first", "second", "third", "fourth", etc. (if any) are used to distinguish similar objects, but not necessarily to describe a specific order or sequence, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. For example, the first signal input terminal IN1 can be any at least one signal input terminal among multiple signal input terminals, and the second signal input terminal IN2 can be at least one signal input terminal among multiple signal input terminals except the first signal input terminal IN1; the first electrostatic protection circuit 21 can be any at least one electrostatic protection circuit among multiple electrostatic protection circuits, and the second electrostatic protection circuit 22 can be at least one electrostatic protection circuit among multiple electrostatic protection circuits except the first electrostatic protection circuit 21.

[0042] A plurality of signal input terminals are connected to the input terminals of the amplifier circuit 10 . The signal input terminals are used to input radio frequency signals of corresponding frequency bands. The amplifier circuit 10 is used to amplify the radio frequency signals input from the signal input terminals.

[0043] Exemplarily, the low noise amplifier 100 further includes a signal output terminal, and the output terminal of the amplifier circuit 10 can output the amplified radio frequency signal through the signal output terminal.

[0044] In some embodiments, see Figure 2 The amplifier circuit 10 includes a plurality of amplifier branches, and the plurality of amplifier branches include at least a first amplifier branch 11 and a second amplifier branch 12, and of course, may also include a third amplifier branch 13 and other amplifier branches. Optionally, each amplifier branch includes one or more amplifier tubes, for example, a first amplifier tube M1 and a second amplifier tube M2; the second amplifier tube M2 of each amplifier branch and the first amplifier tube M1 form a common source and common gate amplifier branch. In some embodiments, different amplifier branches may also share some amplifier tubes, such as Figure 2As shown, the first amplifying branch 11, the second amplifying branch 12, and the second amplifying branch 12 share the first amplifying tube M1, so as to reduce the number of amplifying tubes required for the amplifying circuit 10, which is beneficial to the miniaturization design of the low noise amplifier 100. Of course, in other examples, the amplifying branches may also adopt a common source amplifying structure, that is, only including the second amplifying tube M2 but not including the first amplifying tube M1; the present application does not limit the specific structure of the amplifying branches.

[0045] The input end of the amplifying branch is connected to the signal input end corresponding to the amplifying branch. Figure 2 As shown, the input end of the first amplifying branch 11 is connected to the first signal input end IN1, the input end of the second amplifying branch 12 is connected to the second signal input end IN2, and the input end of the third amplifying branch 13 is connected to the third signal input end IN3. Optionally, the input end of at least one amplifying branch is connected to the corresponding signal input end through a switch circuit, and when the switch circuit corresponding to any signal input end is connected, the RF signal input to the signal input end is transmitted to the corresponding amplifying branch for amplification processing, and the amplified RF signal is output through the output end of the amplifying circuit 10.

[0046] In other embodiments, the amplifier circuit 10 includes at least one amplifier branch, and at least two signal input terminals are connected to the input terminal of the same amplifier branch through respective corresponding switch circuits. Figure 3 As shown, the first signal input terminal IN1, the second signal input terminal IN2, and the third signal input terminal IN3 are all connected to the input terminal of the same amplifying branch through their respective corresponding switch circuits. Exemplarily, when the switch circuit corresponding to any signal input terminal is connected, the RF signal input by the signal input terminal is transmitted to the corresponding amplifying branch for amplification. The RF signals input by multiple signal input terminals can be amplified by the same amplifying branch to reduce the number of amplifying tubes required for the amplifying circuit 10, which is conducive to the miniaturization design of the low noise amplifier 100.

[0047] Exemplarily, the amplifier circuit 10 includes a plurality of amplifier branches, some of which are connected to at least two signal input terminals through corresponding switch circuits, and other amplifier branches are connected to corresponding at least one other signal input terminal. For example, the first signal input terminal IN1, the second signal input terminal IN2, and the third signal input terminal IN3 are all connected to the first amplifier branch 11, and the fourth signal input terminal is connected to the second amplifier branch 12. For example, for RF signals with high requirements for low-noise amplification performance, an independent amplifier branch can be set to amplify the RF signal; for a variety of RF signals with low requirements for low-noise amplification performance, the same amplifier branch can be set to amplify the various RF signals, so as to reduce the number of amplifier tubes required for the amplifier circuit 10 while ensuring the performance of the low-frequency amplifier. Alternatively, for multiple frequency bands of carrier aggregation, the signal input terminals corresponding to at least some of the frequency bands may not share the amplifier branch with other signal input terminals.

[0048] The first end of the electrostatic protection circuit is connected to the corresponding signal input end, and the second end of the electrostatic protection circuit is grounded. Figure 1 As shown, the first end of the first electrostatic protection circuit 21 is connected to the first signal input terminal IN1, the first end of the second electrostatic protection circuit 22 is connected to the second signal input terminal IN2, and the first end of the third electrostatic protection circuit 23 is connected to the third signal input terminal IN3. It should be noted that the first end of the electrostatic protection circuit can be directly connected to the signal input terminal, or can also be connected to the signal input terminal through a switch circuit between the signal input terminal and the amplification branch.

[0049] The electrostatic protection circuit may include an ESD (electrostatic discharge) circuit, which can play a role in electrostatic protection.

[0050] The electrostatic protection circuit includes at least one diode.

[0051] Optionally, the electrostatic protection circuit includes a TVS (Transient Voltage Suppressor) diode. When a transient overvoltage is generated at the signal input terminal, the TVS diode can be quickly turned on and guide the excess voltage to the ground terminal to play an electrostatic protection role.

[0052] Optionally, the diode in the electrostatic protection circuit includes at least one of the following: a PN junction diode, a diode constructed by a bipolar transistor, and a diode constructed by a field effect transistor. Among them, the PN junction diode can be formed based on the PN junction in the low noise amplifier 100. The bipolar transistor (Bipolar Junction Transistor, BJT) contains two PN junctions, wherein when the collector (C) and the base (B) are short-circuited, the emitter junction between the emitter (E) and the base (B) can be used as a diode; or when the emitter (E) and the base (B) are short-circuited, the collector junction between the collector (C) and the base (B) can be used as a diode. Similar to the BJT, when the gate and the source of the field effect transistor (Field-Effect Transistor, FET) are short-circuited, the gate and the drain can be equivalent to a diode; when the gate and the drain of the field effect transistor are short-circuited, the gate and the source can be equivalent to a diode.

[0053] For example, see Figure 4a or Figure 4b , the electrostatic protection circuit includes a first diode branch 201 and a second diode branch 202; the first diode branch 201 includes at least one first diode, and the second diode branch 202 includes at least one second diode. The first end of the first diode branch 201 is connected to the first end of the electrostatic protection circuit, that is, the first end of the first diode branch 201 is connected to the corresponding signal input end, the second end of the first diode branch 201 is grounded, the first end of the second diode branch 202 is connected to the first end of the electrostatic protection circuit, that is, the first end of the second diode branch 202 is connected to the corresponding signal input end, and the second end of the second diode branch 202 is grounded.

[0054] like Figure 4a and Figure 4b As shown, the first diode in the first diode branch 201 is arranged in a first direction, and the second diode in the second diode branch 202 is arranged in a second direction. The first direction is that the anode faces the first end of the electrostatic protection circuit and the cathode faces the ground end, and the second direction is that the cathode faces the first end of the electrostatic protection circuit and the anode faces the ground end. Figure 4a As shown, the first diode branch 201 includes a plurality of first diodes connected in series in a first direction, and the second diode branch 202 includes a plurality of second diodes connected in series in a second direction.

[0055] The electrostatic protection circuit includes two reverse parallel diode branches, each diode branch includes one or more diodes connected in series in the same direction. When an excessive instantaneous voltage is generated at the RF input terminal due to static electricity, the diode branch can be turned on to clamp the voltage input at the RF input terminal within a safe range to prevent the low noise amplifier 100, especially the amplifier circuit 10, from being damaged; wherein, the first diode branch 201 and the second diode branch 202 can clamp the electrostatic voltages in two opposite directions respectively, thereby improving the electrostatic protection performance. Optionally, the number of diodes in the first diode branch 201 can be the same or different from the number of diodes in the second diode branch 202; the size of the diode in the first diode branch 201 can be the same or different from the size of the diode in the second diode branch 202; illustratively, the number of diodes in the first diode branch 201 is the same as the number of diodes in the second diode branch 202, and the size of the diode in the first diode branch 201 is the same as the size of the diode in the second diode branch 202.

[0056] Specifically, at least two signal input terminals are respectively connected to electrostatic protection circuits of different sizes. Figure 1 As shown, the size of the first electrostatic protection circuit 21 is larger than the size of the second electrostatic protection circuit 22. According to the protection requirements of different signal input terminals, by connecting electrostatic protection circuits of different sizes to different signal input terminals, the space occupied by the electrostatic protection circuit in the low noise amplifier 100 can be reduced while ensuring the electrostatic protection performance. For example, if an electrostatic protection circuit of the same size is connected to each signal input terminal of the low noise amplifier 100, in order to ensure a better electrostatic protection effect, the electrostatic protection circuit needs to meet the electrostatic protection requirements of different signal input terminals, that is, it needs to meet the most stringent electrostatic protection requirements, so that the size of the electrostatic protection circuit connected to each signal input terminal is relatively large, and the space occupied by the low noise amplifier 100 is large, which is not conducive to the miniaturization design of the low noise amplifier 100. The embodiment of the present application can be targeted to set electrostatic protection circuits of different sizes for different signal input terminals. For example, a smaller electrostatic protection circuit can be set for a signal input terminal with a lower electrostatic protection requirement, thereby reducing the space occupied by the electrostatic protection circuit in the low noise amplifier 100, which is conducive to the miniaturization design of the low noise amplifier 100.

[0057] In some embodiments, the size of the diode in the first electrostatic protection circuit 21 is larger than the size of the diode in the second electrostatic protection circuit 22; that is, the size of the first electrostatic protection circuit 21 is larger than the size of the second electrostatic protection circuit 22, which may refer to the size of the diode in the first electrostatic protection circuit 21 being larger than the size of the diode in the second electrostatic protection circuit 22. Exemplarily, the size of the first diode in the first electrostatic protection circuit 21 is larger than the size of the first diode in the second electrostatic protection circuit 22, and / or the size of the second diode in the first electrostatic protection circuit 21 is larger than the size of the second diode in the second electrostatic protection circuit 22.

[0058] By setting the size of the diode in the first electrostatic protection circuit 21 to be larger, the electrostatic protection performance of the first electrostatic protection circuit 21 can be improved, for example, the first electrostatic protection circuit 21 can be made to withstand a larger electrostatic current. For the second signal input terminal IN2, an electrostatic protection circuit with a smaller diode can be set to reduce the space occupied by the second electrostatic protection circuit 22 connected to the second signal input terminal IN2, which is conducive to the miniaturization design of the low noise amplifier 100.

[0059] In some embodiments, see Figure 5 The diode in the electrostatic protection circuit includes a first electrode 31 and a second electrode 32. The doping type corresponding to the first electrode 31 is different from the doping type corresponding to the second electrode 32. For example, the doping type corresponding to the first electrode 31 is P-type, and the doping type corresponding to the second electrode 32 is N-type, or the doping type corresponding to the first electrode 31 is N-type, and the doping type corresponding to the second electrode 32 is P-type. The first electrode 31 includes a plurality of first electrode fingers 311, and the second electrode 32 includes a plurality of second electrode fingers 321. The plurality of first electrode fingers 311 and the plurality of second electrode fingers 321 are alternately arranged, or it can be said that the first electrode 31 and the second electrode 32 are comb-shaped electrodes and the first electrode 31 and the second electrode 32 are cross-arranged.

[0060] Optionally, the total number of first electrode fingers 311 and second electrode fingers 321 in the diode of the first electrostatic protection circuit 21 is greater than the total number of first electrode fingers 311 and second electrode fingers 321 in the diode of the second electrostatic protection circuit 22, so that the size of the diode of the first electrostatic protection circuit 21 can be larger than the size of the diode in the second electrostatic protection circuit 22.

[0061] Optionally, the cross-sectional area of ​​the doped region corresponding to the first electrode finger 311 in the diode of the first electrostatic protection circuit 21 is larger than the cross-sectional area of ​​the doped region corresponding to the first electrode finger 311 in the diode of the second electrostatic protection circuit 22, and / or the cross-sectional area of ​​the doped region corresponding to the second electrode finger 321 in the diode of the first electrostatic protection circuit 21 is larger than the cross-sectional area of ​​the doped region corresponding to the second electrode finger 321 in the diode of the second electrostatic protection circuit 22; by setting the cross-sectional area of ​​the doped region corresponding to the electrode finger in the diode of the first electrostatic protection circuit 21 to be larger than the cross-sectional area of ​​the doped region corresponding to the electrode finger in the diode of the second electrostatic protection circuit 22, the size of the diode of the first electrostatic protection circuit 21 can also be made larger than the size of the diode of the second electrostatic protection circuit 22. Please refer to Figure 5 , wherein the cross-sectional direction of the cross-sectional area is parallel to the arrangement direction of the plurality of first electrode fingers 311 in the first electrode 31 and the doping depth direction. Taking the cross-sectional area of ​​the doping region corresponding to the first electrode finger 311 as an example, the cross-sectional area of ​​the doping region may be equal to the product of the doping width w1 and the doping depth, wherein the doping depth is the doping region perpendicular to Figure 5 The depth in the direction of the plane shown, the plane where the direction of the doping depth and the direction of the doping width w1 are located is the cross-sectional direction of the cross-sectional area.

[0062] In some embodiments, the number of diodes in the first electrostatic protection circuit 21 is greater than the number of diodes in the second electrostatic protection circuit 22. Figure 4a and Figure 4b The number of diodes in at least one diode branch of the first electrostatic protection circuit 21 is greater than the number of diodes in the corresponding diode branch of the second electrostatic protection circuit 22, and the size of the first electrostatic protection circuit 21 can also be greater than the size of the second electrostatic protection circuit 22.

[0063] In some embodiments, the size of the diode in the first electrostatic protection circuit 21 is greater than the size of the diode in the second electrostatic protection circuit 22, and the number of diodes in the first electrostatic protection circuit 21 is greater than or equal to the number of diodes in the second electrostatic protection circuit 22. For example, when the number of diodes in the first electrostatic protection circuit 21 is greater than or equal to the number of diodes in the second electrostatic protection circuit 22, the size of the diode in the first electrostatic protection circuit 21 is set to be greater than the size of the diode in the second electrostatic protection circuit 22. Compared with only increasing the size of the diode, the parasitic capacitance of the electrostatic protection circuit can be reduced to avoid reducing the gain of the low noise amplifier.

[0064] Exemplarily, the size of the diode in the first electrostatic protection circuit 21 is 80-200 microns, the size of the diode in the second electrostatic protection circuit 22 is 30-75 microns, and the first diode branch 201 and the second diode branch 202 of the first electrostatic protection circuit 21 each include two diodes connected in series, and the first diode branch 201 and the second diode branch 202 of the second electrostatic protection circuit 22 each include one diode. Of course, it is not limited to this, for example, the number of diodes in the first diode branch 201 and the number of diodes in the second diode branch 202 may also be different, and the size of the diode in the first diode branch 201 and the size of the diode in the second diode branch 202 may also be different; for example, the size of at least one diode in the first electrostatic protection circuit 21 is 80-200 microns, and the size of at least one diode in the second electrostatic protection circuit 22 is 30-75 microns.

[0065] In some embodiments, see Figure 6 The low noise amplifier 100 is disposed on a substrate 200, and an external signal input port 210, an antenna port 220 and a filter 230 are also disposed on the substrate 200. The first signal input terminal IN1 is used to connect to the external signal input port 210, and the second signal input terminal IN2 is used to connect to the antenna port 220 through the filter 230. The filter 230 includes, for example, a multiplexer (Duplexer) or a multiplexer (Multiplexer, MUX).

[0066] like Figure 6 As shown, there is no filter 230 or other devices between the first signal input terminal IN1 and the external signal input port 210. The static electricity of the external signal input port 210 can be directly transmitted to the first signal input terminal IN1, and the static electricity of the antenna port 220 can be consumed by the filter 230 or other devices in the process of being transmitted to the second signal input terminal IN2. Therefore, the energy of the static electricity received by the second signal input terminal IN2 connected to the antenna port 220 is lower than the energy of the static electricity received by the first signal input terminal IN1. By setting the size of the first electrostatic protection circuit 21 to be larger than the size of the second electrostatic protection circuit 22, the first electrostatic protection circuit 21 can withstand a larger electrostatic voltage / electrostatic current, and the electrostatic protection performance of the low noise amplifier 100 can be guaranteed; by setting the size of the second electrostatic protection circuit 22 to be smaller than the size of the first electrostatic protection circuit 21, the space occupied by the electrostatic protection circuit in the low noise amplifier 100 can be reduced.

[0067] For example, when an ESD test is performed on the RF front-end module where the low-noise amplifier 100 is located, when the same voltage is applied to the external signal input port 210 and the antenna port 220 of the RF front-end module, the voltage transmitted to the first signal input terminal IN1 will be larger than the voltage transmitted to the second signal input terminal IN2; by setting the first electrostatic protection circuit 21 to be able to withstand a larger electrostatic voltage / electrostatic current, the electrostatic protection performance of the low-noise amplifier 100 can meet the requirements of the ESD test.

[0068] In some embodiments, at least one of the following preset parameters of the electrostatic protection circuits connected to at least two signal input terminals is different: peak pulse current, maximum operating voltage, breakdown voltage, and rated power. By specifically setting electrostatic protection circuits with different preset parameters for different signal input terminals, a smaller size electrostatic protection circuit can be used for an electrostatic protection circuit with lower preset parameter requirements, thereby reducing the space occupied by the electrostatic protection circuit in the low noise amplifier 100, which is conducive to the miniaturization design of the low noise amplifier 100.

[0069] Exemplarily, the peak pulse current of the first electrostatic protection circuit 21 is greater than the peak pulse current of the second electrostatic protection circuit 22; the peak pulse current of the electrostatic protection circuit refers to the maximum value of the current waveform that the electrostatic protection circuit 21 can withstand in an electrostatic discharge event. Generally, the larger the size of the diode in the electrostatic protection circuit, the greater the peak pulse current that the electrostatic protection circuit can withstand. For example, by setting the size of the diode in the first electrostatic protection circuit 21 to be larger than the size of the diode in the second electrostatic protection circuit 22, it is possible to achieve that the peak pulse current of the first electrostatic protection circuit 21 is greater than the peak pulse current of the second electrostatic protection circuit 22; compared to the electrostatic protection circuits in the low-noise amplifier 100 that all use electrostatic protection circuits with larger peak pulse currents, such as the diodes in each electrostatic protection circuit use larger sizes, the implementation of the present application sets the peak pulse current of the second electrostatic protection circuit 22 to be smaller than the peak pulse current of the first electrostatic protection circuit 21, which can reduce the space occupied by the electrostatic protection circuit in the low-noise amplifier 100.

[0070] Exemplarily, the maximum operating voltage of the first electrostatic protection circuit 21 is greater than the maximum operating voltage of the second electrostatic protection circuit 22; the maximum operating voltage of the electrostatic protection circuit refers to the maximum voltage value that the electrostatic protection circuit can safely withstand under normal working conditions. Generally, the larger the size of the diode in the electrostatic protection circuit, the greater the maximum operating voltage that the electrostatic protection circuit can withstand. For example, by setting the size of the diode in the first electrostatic protection circuit 21 to be larger than the size of the diode in the second electrostatic protection circuit 22, it can be achieved that the maximum operating voltage of the first electrostatic protection circuit 21 is greater than the maximum operating voltage of the second electrostatic protection circuit 22; compared with the electrostatic protection circuits in the low-noise amplifier 100 that all use electrostatic protection circuits with larger maximum operating voltages, such as the diodes in each electrostatic protection circuit use larger sizes, the implementation of this application sets the maximum operating voltage of the second electrostatic protection circuit 22 to be less than the maximum operating voltage of the first electrostatic protection circuit 21, which can reduce the space occupied by the electrostatic protection circuit in the low-noise amplifier 100.

[0071] Exemplarily, the breakdown voltage of the first electrostatic protection circuit 21 is greater than the breakdown voltage of the second electrostatic protection circuit 22; the breakdown voltage of the electrostatic protection circuit refers to the voltage required for reverse breakdown of the diode in the electrostatic protection circuit; generally, the larger the size of the diode in the electrostatic protection circuit, the greater the breakdown voltage of the electrostatic protection circuit. For example, by setting the size of the diode in the first electrostatic protection circuit 21 to be larger than the size of the diode in the second electrostatic protection circuit 22, it is possible to achieve that the breakdown voltage of the first electrostatic protection circuit 21 is greater than the breakdown voltage of the second electrostatic protection circuit 22; compared to the electrostatic protection circuits in the low-noise amplifier 100 all using electrostatic protection circuits with larger breakdown voltages, such as the diodes in each electrostatic protection circuit using larger sizes, the present application implements the setting of the breakdown voltage of the second electrostatic protection circuit 22 to be less than the breakdown voltage of the first electrostatic protection circuit 21, which can reduce the space occupied by the electrostatic protection circuit in the low-noise amplifier 100.

[0072] Exemplarily, the rated power of the first electrostatic protection circuit 21 is greater than the rated power of the second electrostatic protection circuit 22; the rated power of the electrostatic protection circuit refers to the maximum power value that the electrostatic protection circuit can safely withstand and reliably operate under normal working conditions; generally, the larger the size of the diode in the electrostatic protection circuit, the greater the rated power of the electrostatic protection circuit. For example, by setting the size of the diode in the first electrostatic protection circuit 21 to be larger than the size of the diode in the second electrostatic protection circuit 22, it is possible to achieve that the rated power of the first electrostatic protection circuit 21 is greater than the rated power of the second electrostatic protection circuit 22; compared to the electrostatic protection circuits in the low noise amplifier 100 that all use electrostatic protection circuits with larger rated powers, such as the diodes in each electrostatic protection circuit use larger sizes, the implementation of this application sets the rated power of the second electrostatic protection circuit 22 to be less than the rated power of the first electrostatic protection circuit 21, which can reduce the space occupied by the electrostatic protection circuit in the low noise amplifier 100.

[0073] The low noise amplifier 100 provided in the embodiment of the present application includes an amplifier circuit 10, multiple signal input terminals and multiple electrostatic protection circuits; the multiple signal input terminals are connected to the input terminal of the amplifier circuit 10, the signal input terminal is used to input the radio frequency signal of the corresponding frequency band, and the amplifier circuit 10 is used to amplify the radio frequency signal input by the signal input terminal; the first end of the electrostatic protection circuit is connected to the corresponding signal input terminal, and the second end of the electrostatic protection circuit is grounded; wherein, the size of the electrostatic protection circuit connected to each of at least two signal input terminals is different. By setting electrostatic protection circuits of different sizes for different signal input terminals, the space occupied by the electrostatic protection circuit in the low noise amplifier 100 can be reduced while maintaining a high electrostatic protection performance, which is conducive to the miniaturization design of the low noise amplifier 100.

[0074] Please refer to the above examples. Figure 7 , a low noise amplifier 100 provided in another embodiment of the present application includes: an amplifier circuit 10, multiple signal input terminals (such as a first signal input terminal IN1 and a second signal input terminal IN2) and multiple electrostatic protection circuits (such as a first electrostatic protection circuit 21 and a second electrostatic protection circuit 22). Multiple signal input terminals are connected to the input terminal of the amplifier circuit 10, the signal input terminal is used to input a radio frequency signal of a corresponding frequency band, and the amplifier circuit 10 is used to amplify the radio frequency signal input by the signal input terminal; the first terminal of the electrostatic protection circuit is connected to the corresponding signal input terminal, and the second terminal of the electrostatic protection circuit is grounded; wherein, the electrostatic protection performance of the electrostatic protection circuits connected to at least two signal input terminals is different.

[0075] The low-noise amplifier 100 of the embodiment of the present application is not limited to the different sizes of the electrostatic protection circuits connected to at least two signal input terminals. For example, by adjusting the number of diodes and the sizes of diodes in the electrostatic protection circuits connected to different signal input terminals, the sizes of different electrostatic protection circuits can be different or the sizes of different electrostatic protection circuits can be the same. However, there are differences in the electrostatic protection performance of different electrostatic protection circuits. Electrostatic protection circuits with different electrostatic protection performances can be specifically set for different signal input terminals to ensure that multiple signal input terminals in the low-noise amplifier 100 have better electrostatic protection effects.

[0076] Exemplarily, the low noise amplifier 100 is disposed on a substrate 200, and an external signal input port 210, an antenna port 220 and a filter 230 are also provided on the substrate 200, and the first signal input terminal IN1 is used to connect to the external signal input port 210, and the second signal input terminal IN2 is used to connect to the antenna port 220 through the filter 230. Optionally, the peak pulse current of the first electrostatic protection circuit 21 is greater than the peak pulse current of the second electrostatic protection circuit 22; and / or the maximum operating voltage of the first electrostatic protection circuit 21 is greater than the maximum operating voltage of the second electrostatic protection circuit 22; and / or the breakdown voltage of the first electrostatic protection circuit 21 is greater than the breakdown voltage of the second electrostatic protection circuit 22; and / or the rated power of the first electrostatic protection circuit 21 is greater than the rated power of the second electrostatic protection circuit 22.

[0077] Please refer to the above examples. Figure 8 ,like Figure 8 The figure shows a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application; the radio frequency front-end module includes the aforementioned low noise amplifier 100.

[0078] In some embodiments, the RF front-end module may further include at least one of an RF switch, an RF power amplifier, a filter 230, etc., which may be integrated into one module to improve integration and performance and miniaturize the volume.

[0079] In some embodiments, Fig. 9 As shown, the RF front-end module includes a substrate 200 and a RF front-end circuit arranged on the substrate 200. The RF front-end circuit may include a switching circuit, a filter 230, a RF power amplifier chip and a low-noise amplifier 100 between the RF receiving port RX, the RF transmitting port TX and the antenna port 220, and a RF signal transmission path is formed through the above-mentioned RF devices.

[0080] The RF front-end circuit can choose to send RF signals to the antenna port 220 or receive RF signals from the antenna port 220 to achieve amplification, filtering and other processing of the RF analog signal.

[0081] As an implementation method, the RF front-end module may include multiple chips, and the multiple chips include at least a low noise amplifier chip integrated with the above-mentioned low noise amplifier 100. Furthermore, the RF front-end module may also include at least one other chip such as a power amplifier chip, a control chip, a switch chip, and a filter chip.

[0082] Exemplarily, different chips may adopt different processes. For example, the low noise amplifier chip and the control chip may adopt at least one of the silicon on insulator (SOI) process, the high electron mobility transistor (HEMT) process, and the pseudomorphic high electron mobility transistor (PHEMT) process; the power amplifier chip may adopt the HBT (heterojunction bipolar transistor) process, also known as the HBT chip, and the control chip may adopt the CMOS process, also known as the CMOS chip.

[0083] Exemplarily, the RF front-end module may further include a filter chip, in which one or more filters 230 may be integrated, which may constitute a single filter, a duplexer or a multiplexer for filtering RF signals.

[0084] The specific principle and implementation method of the RF front-end module provided in the embodiment of the present application are similar to those of the low-noise amplifier 100 in the aforementioned embodiment, and will not be repeated here.

[0085] Please refer to the above examples. Fig.10 ,like Fig.10 Shown is a schematic block diagram of a radio frequency front-end module provided in another embodiment of the present application.

[0086] The radio frequency front-end module includes a low noise amplifier 100 and a plurality of electrostatic protection circuits.

[0087] The low noise amplifier 100 includes an amplifier circuit 10 and multiple signal input terminals, wherein the multiple signal input terminals are connected to the input terminal of the amplifier circuit 10; a first terminal of the electrostatic protection circuit is connected to the signal input terminal corresponding to the electrostatic protection circuit, and a second terminal of the electrostatic protection circuit is grounded; wherein at least two electrostatic protection circuits have different sizes and / or electrostatic protection performances.

[0088] In the RF front-end module of the embodiment of the present application, Figure 1 The electrostatic protection circuit shown in FIG. 1 may be provided in the low noise amplifier 100, or may be provided as shown in FIG. Fig.10The electrostatic protection circuit shown can be arranged outside the low noise amplifier 100, or the electrostatic protection circuit of part of the signal input end is arranged in the low noise amplifier 100, and the electrostatic protection circuit of part of the signal input end is arranged outside the low noise amplifier 100. Fig.10 As shown, the low noise amplifier 100, the first electrostatic protection circuit 21, and the second electrostatic protection circuit 22 are all arranged on the substrate 200 of the RF front-end module. By setting electrostatic protection circuits of different sizes for different signal input terminals, the space occupied by the electrostatic protection circuit can be reduced, which is conducive to the miniaturization design of the RF front-end module.

[0089] The specific principle and implementation method of the RF front-end module provided in the embodiment of the present application are similar to those of the low-noise amplifier 100 in the aforementioned embodiment, and will not be repeated here.

[0090] Please refer to the above examples. Fig.11 ,like Fig.11 FIG. 1 is a schematic block diagram of an electronic device provided by another embodiment of the present application. The electronic device includes the aforementioned low noise amplifier 100; or includes the aforementioned radio frequency front-end module.

[0091] The electronic device may be a communication device such as a mobile phone, a tablet computer, a vehicle-mounted terminal, or of course, may also be other communication devices with communication functions. The embodiments of the present application do not limit the specific type of the electronic device.

[0092] The specific principles and implementation methods of the electronic device provided in the embodiment of the present application are similar to the low noise amplifier 100 or the RF front-end module in the aforementioned embodiment, and will not be repeated here.

[0093] It should be understood that the terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0094] It should be understood that when an element or layer is referred to as "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0095] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0096] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0097] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A low noise amplifier, characterized in that: The low noise amplifier comprises: Amplifier circuit; A plurality of signal input terminals, the plurality of signal input terminals are connected to the input terminal of the amplifying circuit, the signal input terminals are used to input radio frequency signals of corresponding frequency bands, and the amplifying circuit is used to amplify the radio frequency signals input by the signal input terminals; A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a corresponding signal input end, and a second end of the electrostatic protection circuit is grounded; Among them, at least two of the signal input terminals are respectively connected to electrostatic protection circuits of different sizes.

2. The low noise amplifier according to claim 1, characterized in that: The plurality of signal input terminals at least include a first signal input terminal and a second signal input terminal, the plurality of electrostatic protection circuits at least include a first electrostatic protection circuit and a second electrostatic protection circuit, a first terminal of the first electrostatic protection circuit is connected to the first signal input terminal, and a first terminal of the second electrostatic protection circuit is connected to the second signal input terminal; The size of the first electrostatic protection circuit is larger than that of the second electrostatic protection circuit.

3. The low noise amplifier according to claim 2, characterized in that: The electrostatic protection circuit includes at least one diode, and the size of the diode in the first electrostatic protection circuit is greater than the size of the diode in the second electrostatic protection circuit.

4. The low noise amplifier according to claim 3, characterized in that: The number of diodes in the first electrostatic protection circuit is greater than or equal to the number of diodes in the second electrostatic protection circuit.

5. The low noise amplifier according to claim 3, characterized in that: The electrostatic protection circuit comprises a first diode branch and a second diode branch; a first end of the first diode branch is connected to a first end of the electrostatic protection circuit, a second end of the first diode branch is grounded, a first end of the second diode branch is connected to a first end of the electrostatic protection circuit, and a second end of the second diode branch is grounded; The first diode branch includes a plurality of first diodes connected in series in a first direction, and the second diode branch includes a plurality of second diodes connected in series in a second direction, wherein the first direction is such that the anode faces the first end of the electrostatic protection circuit and the cathode faces the ground end, and the second direction is such that the cathode faces the first end of the electrostatic protection circuit and the anode faces the ground end.

6. The low noise amplifier according to claim 5, characterized in that: The size of the first diode in the first electrostatic protection circuit is greater than the size of the first diode in the second electrostatic protection circuit, and / or The size of the second diode in the first electrostatic protection circuit is greater than the size of the second diode in the second electrostatic protection circuit.

7. The low noise amplifier according to any one of claims 2 to 6, characterized in that: The low noise amplifier is arranged on a substrate, and an external signal input port, an antenna port and a filter are also arranged on the substrate. The first signal input port is used to connect to the external signal input port, and the second signal input port is used to connect to the antenna port through the filter.

8. The low noise amplifier according to any one of claims 1 to 6, characterized in that: The electrostatic protection circuits connected to the at least two signal input terminals are different in at least one of the following preset parameters: peak pulse current, maximum operating voltage, breakdown voltage, and rated power.

9. The low noise amplifier according to any one of claims 2 to 6, characterized in that: The peak pulse current of the first electrostatic protection circuit is greater than the peak pulse current of the second electrostatic protection circuit; and / or The maximum operating voltage of the first electrostatic protection circuit is greater than the maximum operating voltage of the second electrostatic protection circuit; and / or The breakdown voltage of the first electrostatic protection circuit is greater than the breakdown voltage of the second electrostatic protection circuit; and / or The rated power of the first electrostatic protection circuit is greater than the rated power of the second electrostatic protection circuit.

10. The low noise amplifier according to any one of claims 3 to 6, characterized in that: The diode in the electrostatic protection circuit comprises a first electrode and a second electrode, the doping type corresponding to the first electrode is different from the doping type corresponding to the second electrode; the first electrode comprises a plurality of first electrode fingers, the second electrode comprises a plurality of second electrode fingers, the plurality of first electrode fingers and the plurality of second electrode fingers are arranged alternately; The total number of the first electrode fingers and the second electrode fingers in the diode of the first electrostatic protection circuit is greater than the total number of the first electrode fingers and the second electrode fingers in the diode of the second electrostatic protection circuit.

11. The low noise amplifier according to any one of claims 3 to 6, characterized in that: The cross-sectional area of ​​the doped region corresponding to the first electrode finger in the diode of the first electrostatic protection circuit is larger than the cross-sectional area of ​​the doped region corresponding to the first electrode finger in the diode of the second electrostatic protection circuit, and / or the cross-sectional area of ​​the doped region corresponding to the second electrode finger in the diode of the first electrostatic protection circuit is larger than the cross-sectional area of ​​the doped region corresponding to the second electrode finger in the diode of the second electrostatic protection circuit; wherein the cross-sectional direction of the cross-sectional area is parallel to the arrangement direction of the multiple first electrode fingers in the first electrode and the depth direction of doping.

12. The low noise amplifier according to any one of claims 1 to 6, characterized in that: The electrostatic protection circuit includes a TVS diode.

13. The low noise amplifier according to any one of claims 1 to 6, characterized in that: The diode in the electrostatic protection circuit includes at least one of the following: a PN junction diode, a diode constructed by a bipolar transistor, and a diode constructed by a field effect transistor.

14. The low noise amplifier according to any one of claims 1 to 6, characterized in that: The amplifying circuit comprises a plurality of amplifying branches, and the input ends of the amplifying branches are connected to the signal input ends corresponding to the amplifying branches; and / or The amplifier circuit includes at least one amplifier branch, and at least two of the signal input ends are connected to the input end of the same amplifier branch through respective corresponding switch circuits.

15. A low noise amplifier, characterized in that: The low noise amplifier comprises: Amplifier circuit; A plurality of signal input terminals, the plurality of signal input terminals are connected to the input terminal of the amplifying circuit, the signal input terminals are used to input radio frequency signals of corresponding frequency bands, and the amplifying circuit is used to amplify the radio frequency signals input by the signal input terminals; A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a corresponding signal input end, and a second end of the electrostatic protection circuit is grounded; Among them, at least two of the signal input terminals are respectively connected to electrostatic protection circuits having different electrostatic protection performances.

16. The low noise amplifier according to claim 15, characterized in that: The electrostatic protection circuits connected to the at least two signal input terminals are different in at least one of the following preset parameters: peak pulse current, maximum operating voltage, breakdown voltage, and rated power.

17. A radio frequency front-end module, characterized in that: The radio frequency front-end module includes a low noise amplifier as claimed in any one of claims 1 to 16.

18. A radio frequency front-end module, characterized in that: The radio frequency front-end module comprises: A low noise amplifier, the low noise amplifier comprising an amplifier circuit and a plurality of signal input terminals, the plurality of signal input terminals being connected to an input terminal of the amplifier circuit; A plurality of electrostatic protection circuits, wherein a first end of the electrostatic protection circuit is connected to a signal input end corresponding to the electrostatic protection circuit, and a second end of the electrostatic protection circuit is grounded; Wherein, at least two of the electrostatic protection circuits have different sizes and / or electrostatic protection performances.

19. An electronic device, characterized in that: The electronic device comprises a low noise amplifier as described in any one of claims 1 to 16; or comprises a radio frequency front-end module as described in any one of claims 17-18.

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