Storage device

Abstract

A memory device includes: a first module including a first substrate and at least one first semiconductor chip disposed on the first substrate; a second module electrically connected to the first module, and including a second substrate and at least one second semiconductor chip disposed on the second substrate; a capacitor module disposed between the first module and the second module, including at least one capacitor, and electrically connected to at least one of the first module and the second module; and a housing configured to accommodate the first module, the second module, and the capacitor module therein.

Description

Technical Field

[0001] Example embodiments relate to storage devices, and more particularly, to solid state drive (SSD) devices. Background Art

[0002] Solid-state drive (SSD) devices have attracted attention as next-generation storage devices that replace hard disk drives (HDDs). SSD devices are storage devices based on non-volatile memory, with low power consumption and high storage density. When SSD devices are used as storage devices, they can read and write large amounts of data at high speed, resulting in an increased demand for SSD devices. However, SSD devices include various components (including multiple semiconductor chips), so it has always been difficult to spatially arrange semiconductor chips and components. Such spatial arrangement problems have affected the reliability of storage devices. Summary of the invention

[0003] Some example embodiments provide a solid state drive (SSD) device having improved product reliability.

[0004] According to example embodiments, a storage device includes: a first module including a first substrate and at least one first semiconductor chip located on the first substrate; a second module electrically connected to the first module and including a second substrate and at least one second semiconductor chip located on the second substrate; a capacitor module located between the first module and the second module, including at least one capacitor, and electrically connected to at least one of the first module and the second module; and a housing configured to accommodate the first module, the second module, and the capacitor module therein. At least a portion of the capacitor module is in physical contact with the housing.

[0005] According to an example embodiment, a memory device includes a first module, a capacitor module, and a second module sequentially stacked and electrically connected to each other. The first module includes a first substrate and at least one first semiconductor chip located on the first substrate, the capacitor module includes a capacitor substrate and at least one capacitor located on the capacitor substrate, and the second module includes a second substrate and at least one second semiconductor chip located on the second substrate.

[0006] According to example embodiments, a storage device includes a capacitor module installed therein, the capacitor module including: a first capacitor substrate and a second capacitor substrate having different thermal conductivities; at least one capacitor, the at least one capacitor being disposed on the first capacitor substrate and the second capacitor substrate; and a frame, the frame being along a periphery of at least one of the first capacitor substrate and the second capacitor substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0008] Figure 1 is a perspective view of a storage device according to example embodiments.

[0009] Figure 2 yes Figure 1 An exploded perspective view of a storage device.

[0010] Figure 3 It is along Figure 1 A cross-sectional view of the memory device taken along line AA'.

[0011] Figure 4 It is along Figure 1 A cross-sectional view of the memory device taken along line BB'.

[0012] Figure 5A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 5B It is along Figure 1 A cross-sectional view taken along line BB'.

[0013] Fig. 6A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 6B It is along Figure 1 A cross-sectional view taken along line AA'.

[0014] Fig. 7A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 7B It is along Figure 1 A cross-sectional view taken along line AA'.

[0015] Fig. 8A is an exploded perspective view showing a portion of a memory device according to example embodiments, showing a capacitor substrate, and Figure 8B It is along Figure 1 A cross-sectional view taken along line BB'.

[0016] Fig.9A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a capacitor substrate, Fig. 9B yes Fig.9A A perspective view of the assembled capacitor substrate shown in FIG. Fig. 9C It is along Figure 1 A cross-sectional view taken along line BB'.

[0017] Fig. 10A is a perspective view of a portion of a memory device according to an example embodiment, showing a capacitor substrate, and Fig. 10B It is along Figure 1 A cross-sectional view taken along line BB'. DETAILED DESCRIPTION

[0018] The present disclosure may be modified in various ways and may have various exemplary embodiments, in which specific exemplary embodiments will be described in detail with reference to the accompanying drawings. However, it should be understood that the description of the specific exemplary embodiments of the present disclosure is not intended to limit the present disclosure to a specific practice mode, and the present disclosure will cover all modifications, equivalents and substitutes included in the spirit and technical scope of the present disclosure.

[0019] Although the terms "same", "equal" or "identical" are used in the description of example embodiments, it should be understood that some imprecision may exist. Therefore, when one element is referred to as being the same as another element, it should be understood that one element or value is the same as the other element or value within a desired manufacturing or operating tolerance range (e.g., ±10%).

[0020] When the term "about" or "substantially" is used with a numerical value in this specification, it means that the relevant numerical value includes a manufacturing or operating tolerance (e.g., ±10%) around the numerical value. In addition, when the words "about" and "substantially" are used in conjunction with a geometric shape, it means that the accuracy of the geometric shape is not required, but the latitude of the shape is within the scope of the present disclosure. In addition, regardless of whether a numerical value or shape is modified to "about" or "substantially", it should be understood that these numerical values ​​and shapes should be interpreted as including a manufacturing or operating tolerance (e.g., ±10%) around the numerical value or shape.

[0021] As used herein, expressions such as “at least one of,” when following a list of elements, modify the entire list of elements and do not modify the individual elements of the list. Thus, for example, “at least one of A, B, or C” and “at least one of A, B, and C” both mean A, B, C, or any combination thereof. Likewise, A and / or B means A, B, or A and B.

[0022] Hereinafter, some example embodiments will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote the same elements, and redundant descriptions thereof will be omitted.

[0023] Some example embodiments relate to a memory device among semiconductor devices, and more particularly, to a solid state drive (SSD) device. The memory device may be provided in the form of a package including a printed circuit board (PCB) and a memory module having a first substrate on which a semiconductor chip is mounted.

[0024] Figure 1 is a perspective view of a storage device according to example embodiments. Figure 2 yes Figure 1 An exploded perspective view of a storage device. Figure 3 It is along Figure 1 A cross-sectional view of the memory device taken along line AA'. Figure 4 It is along Figure 1 A cross-sectional view of the memory device taken along line BB'.

[0025] Reference Figure 1 , Figure 2 , Figure 3 and Figure 4 , a storage device according to an example embodiment may include a first module 120, a second module 130, a capacitor module 170, and a housing 110. The capacitor module 170 may be disposed between the first module 120 and the second module 130. The first module 120, the second module 130, and the capacitor module 170 may be accommodated in the housing 110.

[0026] The housing 110 may form the exterior of the storage device. The housing 110 may have a three-dimensional shape having an accommodation space accommodating various components, and the first module 120, the second module 130, and the capacitor module 170 may be accommodated in the accommodation space.

[0027] The housing 110 may include a first housing 111 and a second housing 113, which are removably coupled to each other and are sequentially arranged in a vertical direction. Hereinafter, two directions parallel to the ground and perpendicular to each other will be referred to as a first direction D1 and a second direction D2, and a direction perpendicular to the ground will be referred to as a third direction D3. For ease of description, a direction away from the ground will be referred to as an upward direction, and a direction close to the ground will be referred to as a downward direction.

[0028] The housing 110 may include a first housing 111 and a second housing 113 sequentially disposed along the third direction D3. The first housing 111 may correspond to a lower housing, and the second housing 113 may correspond to an upper housing. The first housing 111 may be coupled to the second housing 113 to form a receiving space therein.

[0029] The first housing 111 may include a first plate 111a having a flat plate shape and a first side wall 111b bent upward to extend from the first plate 111a. The first housing 111 may include an outer surface exposed to the outside and an inner surface facing the accommodation space. The first plate 111a and the first side wall 111b of the first housing 111 may be manufactured separately and then assembled together. However, example embodiments are not limited thereto, and the first plate 111a and the first side wall 111b of the first housing 111 may be formed integrally with each other (e.g., may be a single integral body).

[0030] An opening OPN exposing the first external connector 125 to the outside may be provided in one side wall of the housing 110 (eg, at least one side wall among the side walls 111 b of the first housing 111 ).

[0031] The second housing 113 may include a second plate 113a having a flat plate shape and a second side wall 113b bent downward to extend from the second plate 113a. The second housing 113 may include an outer surface exposed to the outside and an inner surface facing the accommodation space. The second plate 113a and the second side wall 113b of the second housing 113 may also be manufactured separately and then assembled together. However, example embodiments are not limited thereto, and the second plate 113a and the second side wall 113b of the second housing 113 may be formed integrally with each other (e.g., may be a single integral body).

[0032] In example embodiments, the housing 110 may have a hexahedral shape, but the shape of the housing 110 is not limited thereto. For example, the housing 110 may have a polygonal column shape, such as a pentagonal column shape or a hexagonal column shape, or may have a cylindrical shape.

[0033] The housing 110 may include a material having high thermal conductivity so that heat generated by components (such as the first semiconductor chip 123 and / or the second semiconductor chip 133) disposed in the housing 110 is dissipated (e.g., dissipated) to the outside of the housing 110. For example, the thermal conductivity of the housing 110 may be at least 10 W / mK or greater. In addition, the housing 110 may shield components disposed in the housing 110 from external electromagnetic waves.

[0034] The housing 110 may be formed of a single material or a combination of different materials. The housing 110 may include a metal, a carbon-based material, a polymer, or a combination thereof. The housing 110 may include, for example, copper (Cu), aluminum (Al), zinc (Zn), tin (Sn), stainless steel, and / or a composite metal containing the above materials. In some example embodiments, the housing 110 may include graphite, graphene, carbon fiber, or a carbon nanotube composite material. In some other example embodiments, the housing 110 may include epoxy resin, polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or polypropylene (PP).

[0035] The first module 120, the second module 130 and the capacitor module 170 provided in the housing 110 may be electronic components constituting a storage device, and the electronic components may include an SSD controller, a nonvolatile memory device, a volatile memory device and a buffer memory device. The SSD controller, the nonvolatile memory device, the buffer memory device and the like may be provided in the form of a semiconductor chip.

[0036] The first module 120 may include a first substrate 121 and at least one first semiconductor chip 123 mounted on the first substrate 121 .

[0037] The first substrate 121 is a single-layer or multi-layer circuit board with an upper surface and a lower surface opposite to each other, and can be a printed circuit board (PCB). For example, the first substrate 121 can be a double-sided PCB or a multi-layer PCB. For example, the first substrate 121 can include a base layer and an interconnection layer formed on the upper surface and the lower surface of the base layer. The PCB may include an interconnection formed on the PCB or inside the PCB and a path for connecting the interconnection. The interconnection can be a printed circuit pattern for interconnecting electronic components. The base layer can include at least one material selected from phenolic resin, epoxy resin and polyimide. The interconnection layer can include a conductive material, such as aluminum (Al), copper (Cu), nickel (Ni) or tungsten (W). The first semiconductor chip 123 and the electronic component mounted on the first substrate 121 can be electrically connected to each other through the interconnection layer of the first substrate 121.

[0038] The first substrate 121 may have a rectangular or square shape. The first substrate 121 may extend along the first direction D1 and / or the second direction D2, and may have a first side portion 121a and a second side portion 121b opposite to each other in the first direction D1.

[0039] A first external connector 125 having a connection terminal for connecting to an external host system, not shown, may be disposed on the first side portion 121 a of the first substrate 121 .

[0040] The first external connector 125 can be connected to an external device (e.g., a host system). The first external connector 125 can be provided at the end of the first substrate 121 of the first module 120 so that the external device can be removed from the first external connector 125. An opening can be formed in the first housing 111 to expose the first external connector 125 to the outside, and the first external connector 125 and the external host system can be connected through the opening. In this case, the first external connector 125 can be inserted into a socket of the external device to electrically connect the external device and the storage device. The storage device can send electrical signals to the external device and receive electrical signals from the external device through the first external connector 125, and receive the power required for operation from the external device. The external device may include various types of host systems. For example, the host system may be a laptop computer, a netbook, a mobile phone, etc. The first external connector 125 of the first substrate 121 may include a female connector. Therefore, the storage device may be electrically connected to the host through the first external connector 125.

[0041] However, the first external connector 125 is not limited to the above examples, and may be modified in various forms. For example, the first external connector 125 may be provided in plurality, or may be provided as a male connector instead of a female connector. For ease of description, in the example embodiment, a portion of the first substrate 121 is shown as protruding to the outside of the housing 110. However, the first substrate 121 may not protrude to the outside of the housing 110. In addition, for ease of description, the first external connector 125 is shown as being provided on the lower side of the first side portion 121a of the first substrate 121, but various types of universal connectors may be provided on the first side portion 121a.

[0042] According to some example embodiments, the first external connector 125 may connect the storage device to an external host to exchange signals and / or receive power. The first external connector 125 may be a connector configured to connect to an external device with an interface that complies with the following standards: for example, the Parallel Advanced Technology Attachment (PATA) standard, the Serial Advanced Technology Attachment (SATA) standard, the SCSI standard, or the PCI Express (PCIe) standard. The SATA standard covers not only SATA-1, but also all SATA-based standards such as SATA-2, SATA-3, and e-SATA (external SATA). The PCIe standard covers not only PCIe 1.0, but also all PCIe-based standards such as PCIe 2.0, PCIe 2.1, PCIe 3.0, and PCIe 4.0. The SCSI standard covers all SCSI-based standards such as parallel SCSI, serially attached SA-SCSI (SAS), and iSCSI. In some example embodiments, the first external connector 125 may be a connector configured to support an M2 interface, an mSATA interface, or a 2.5" interface.

[0043] The first external connector 125 may be exposed to the outside through an opening OPN formed in the side wall of the housing 110. The opening OPN may be formed in one first side wall 111b of the first housing 111. However, example embodiments are not limited thereto, and the opening OPN may be formed in one second side wall 113b of the second housing 113.

[0044] The second side portion 121 b of the first substrate 121 may be provided with a power terminal for supplying power to the electronic components.

[0045] The first substrate 121 may be a single-sided or double-sided substrate. Depending on whether the first substrate 121 is a single-sided substrate or a double-sided substrate, at least one first semiconductor chip 123 may be mounted on the upper surface and / or the opposite surface of the first substrate 121. The first semiconductor chip 123 may include at least one first upper semiconductor chip 123b mounted on the upper surface of the first substrate 121 and / or at least one first lower semiconductor chip 123a mounted on the lower surface of the first substrate 121. In this case, the first upper semiconductor chip 123b and / or the first lower semiconductor chip 123a may be provided as a single or multiple. In an example embodiment, the first upper semiconductor chip 123b and the first lower semiconductor chip 123a are both described as being mounted.

[0046] The second module 130 may include a second substrate 131 and at least one second semiconductor chip 133 mounted on the second substrate 131 .

[0047] The second substrate 131 can also be a printed circuit board (PCB) as a single-layer or multi-layer circuit board, which has an upper surface and a lower surface opposite to each other. For example, the second substrate 131 can be a double-sided PCB or a multi-layer PCB. For example, the second substrate 131 can include a base layer and an interconnection layer formed on the upper surface and the lower surface of the base layer. The PCB may include an interconnection formed on the PCB or inside the PCB and a path for connecting the interconnection. The interconnection can be a printed circuit pattern for interconnecting electronic components. The base layer may include at least one material selected from phenolic resin, epoxy resin or polyimide. The interconnection layer may include a conductive material, such as aluminum (Al), copper (Cu), nickel (Ni) or tungsten (W). The second semiconductor chip 133 and the electronic component mounted on the second substrate 131 can be electrically connected to each other through the interconnection layer of the second substrate 131.

[0048] The second substrate 131 may have a rectangular or square shape. The second substrate 131 may extend in the first direction D1 and / or the second direction D2.

[0049] The second substrate 131 may be a single-sided or double-sided substrate. Depending on whether the second substrate 131 is a single-sided substrate or a double-sided substrate, at least one second semiconductor chip 133 may be mounted on the upper surface and / or the opposite surface of the second substrate 131. The second semiconductor chip 133 includes at least one second upper semiconductor chip 133b mounted on the upper surface of the second substrate 131 and / or at least one second lower semiconductor chip 133a mounted on the lower surface of the second substrate 131. The second upper semiconductor chip 133b and / or the second lower semiconductor chip 133a may be provided as a single or multiple. In an example embodiment, the second upper semiconductor chip 133b and the second lower semiconductor chip 133a are both described as being mounted.

[0050] When a plurality of first semiconductor chips 123 are disposed on the first substrate 121 and a plurality of second semiconductor chips 133 are disposed on the second substrate 131 , the first semiconductor chips 123 and / or the second semiconductor chips 133 may be the same type of semiconductor chips or may be different types of semiconductor chips.

[0051] In example embodiments, the first semiconductor chip 123 and / or the second semiconductor chip 133 may include a controller chip and at least one memory semiconductor chip (e.g., a plurality of memory chips). The controller chip, at least one memory semiconductor chip, etc. may be mounted on the upper surface and / or lower surface of the first substrate 121 and / or the second substrate 131 via connection members such as solder balls.

[0052] The SSD controller may be implemented as a controller chip. The SSD controller may exchange signals with the host through a host interface. The host interface may include a universal serial bus (USB), a small computer system interface (SCSI), PCI Express, ATA, parallel ATA (PATA), serial ATA (SATA), and / or serial attached SCSI (SAS). The signals exchanged between the SSD controller and the host may include commands, addresses, data, etc. The SSD controller may analyze and process the signals received from the host.

[0053] A portion of the controller chip may control the memory semiconductor chip. The control circuit unit may be embedded in the controller chip. The control circuit unit of the controller chip may control access to data stored in the memory semiconductor chip. The control circuit unit of the controller chip may control write and read operations of flash memory, etc. based on control commands from an external host. The control circuit unit of the controller chip may include an additional control semiconductor chip, such as an application specific integrated circuit (ASIC). The control circuit unit of the controller chip may be configured to be automatically executed by the operating system of the external host, for example, when the storage device is connected to an external host. The control circuit unit of the controller chip may provide a standard protocol, such as Parallel Advanced Technology Attachment (PATA), Serial Advanced Technology Attachment (SATA), SCSI standard, or PCI Express (PCIe). In addition, the control circuit unit of the controller chip may perform wear leveling, garbage collection, bad block management, and / or error correction code for driving a non-volatile memory device. In this case, the control circuit unit of the controller chip may include a script for automatic execution and an application that can be executed in an external host.

[0054] A portion of the memory semiconductor chip may be a nonvolatile memory device. The nonvolatile memory device may be used as a storage medium of the SSD. The nonvolatile memory device may include, for example, a flash memory, a phase change RAM (PRAM), a resistive RAM (RRAM), a ferroelectric RAM (FeRAM), and a magnetic RAM (MRAM), etc., but the example embodiments are not limited thereto. The flash memory may be, for example, a NAND flash memory. The flash memory may be, for example, a V-NAND flash memory. The nonvolatile memory device may include a single semiconductor die or may be a stack of multiple semiconductor dies.

[0055] Another part of the memory semiconductor chip may be a volatile memory device. The volatile memory device may be, for example, a dynamic random access memory (DRAM), a static RAM (SRAM), etc., but example embodiments are not limited thereto. The volatile memory device may provide a cache function for storing data frequently used when an external host accesses the storage device, and may change the length of the access time and the data transfer performance to match the performance of the external host connected to the storage device.

[0056] The buffer memory device can be used as a buffer to temporarily store data received from the host or temporarily store data read from the non-volatile memory device. In addition, the buffer memory device can be used to drive software (S / W) for effectively managing the non-volatile memory device. In addition, the buffer memory device can be used to store metadata input from the host or store cache data. For example, the buffer memory device may include at least one DRAM package. The DRAM package may include a package substrate and at least one DRAM chip mounted on the package substrate. The SSD may replace DRAM with a volatile memory (such as SRAM) or a non-volatile memory (such as flash memory, PRAM, MRAM, ReRAM, and FRAM).

[0057] In example embodiments, although not shown in detail in the drawings, resistors, capacitors, inductors, switches, temperature sensors, DC-DC converters, active devices, and / or passive elements may be further mounted on the first substrate 121 and / or the second substrate 131 .

[0058] The flexible connection substrate 140 may be provided between the first module 120 and the second module 130 to connect the first module 120 and the second module 130 to each other. For example, the flexible connection substrate 140 may be a flexible printed circuit board and may have one end connected to the first substrate 121 of the first module 120 and the other end connected to the second substrate 131 of the second module 130 to electrically connect the first module 120 and the second module 130 to each other. The flexible connection substrate 140 may be bent to surround one side of the capacitor module 170 between one edge of the first substrate 121 and one edge of the second substrate 131. Figure 2 In the embodiment, one end of the flexible connection substrate 140 is shown as being connected only to the first substrate 121 of the first module 120, but this is only for the convenience of description. Figure 3 As shown, the flexible connection substrate 140 may be connected to the first substrate 121 of the first module 120. The other end of the flexible connection substrate 140 may be connected to the second substrate 131 of the second module 130.

[0059] In example embodiments, the flexible connection substrate 140 has been described as being connected to only one side of the first module 120 and one side of the second module 130, but example embodiments are not limited thereto, and a plurality of flexible connection substrates 140 may be provided and their positions may also be changed in various ways.

[0060] The capacitor module 170 may be disposed between the first module 120 and the second module 130. The capacitor module 170 may include a capacitor substrate 171 and at least one capacitor 173 mounted on the capacitor substrate 171.

[0061] Similar to the first substrate 121 and the second substrate 131 described above, the capacitor substrate 171 may be a single-layer or multi-layer circuit board having an upper surface and a lower surface opposite to each other, and may be a printed circuit board (PCB). For example, the capacitor substrate 171 may include a base layer and an interconnection layer formed on the upper surface and the lower surface of the base layer. The PCB may include interconnections formed on or inside the PCB and paths for connecting the interconnections. The interconnections may be printed circuit patterns for interconnecting electronic components.

[0062] One or more capacitors 173 may be mounted on the capacitor substrate 171. The capacitor 173 according to the present example embodiment may include various types of capacitors, such as a tantalum capacitor, an electrolytic capacitor, a film capacitor, or a ceramic capacitor, but the type is not limited thereto. For ease of description, the present example embodiment provides an example in which the capacitor 173 is a tantalum capacitor 173t.

[0063] In example embodiments, other elements (eg, other types of active elements and passive elements) in addition to the capacitor 173 may be further mounted on the capacitor substrate 171. The active or passive elements may include resistors, capacitors, inductors, switches, temperature sensors, DC-DC converters, and the like.

[0064] The capacitor module 170 and the first module 120 and the second module 130 may be electrically connected to each other. When the capacitor module 170 and the first module 120 and the second module 130 are electrically connected to each other, the capacitor module 170 and the first module 120 and the second module 130 may share a power input unit. In an example embodiment, the capacitor module 170 and the first module 120 may be electrically connected by a first contact portion 151a, and the capacitor module 170 and the second module 130 may be electrically connected to each other by a second contact portion 151b. The first contact portion 151a and the second contact portion 151b may include various types of connectors used in a printed circuit board. For example, a board connector, a high-density pin connector, a circular connector, a plug-in connector, a 4-pin connector, etc. may be mainly used, but the example embodiment is not limited thereto.

[0065] In example embodiments, a single first contact portion 151a and a single second contact portion 151b are shown as being respectively disposed on both sides of the capacitor substrate 171, but example embodiments are not limited thereto. In some example embodiments, each of the first contact portion 151a and the second contact portion 151b may be provided in plurality. The positions of the first contact portion 151a and the second contact portion 151b may also be changed from the positions shown to other positions. In example embodiments, the first contact portion 151a and the second contact portion 151b are shown as directly connecting the capacitor substrate 171 to the first substrate 121 and the second substrate 131 in the third direction D3. However, example embodiments are not limited thereto, and the capacitor substrate 171 and the first substrate 121 and the second substrate 131 may also be connected by additional types of connectors or flexible circuit boards.

[0066] Similar to the first substrate 121 or the second substrate 131, the capacitor substrate 171 may extend in the first direction D1 and / or the second direction D2. The capacitor substrate 171 may have a rectangular or square shape. However, the shape of the capacitor substrate 171 is not limited thereto, and the capacitor substrate 170 may be provided in a different shape regardless of the shape of the first substrate 121 and / or the second substrate 131. In addition, the capacitor substrate 171 may be provided to be larger or smaller than the first substrate 121 and / or the second substrate 131. However, the size of the capacitor substrate 171 is not limited thereto, and the capacitor substrate 171 may be provided to be the same size as the first substrate 121 and / or the second substrate 131.

[0067] The heat dissipation member may be disposed between the capacitor module 170 and the first module 120 and the second module 130. The heat dissipation members 160a, 160b, 160c, and 160d (also referred to as 160) may include, for example, a thermal interface material (TIM). The heat dissipation member may include a first heat dissipation member 160a disposed between the capacitor module 170 and the first module 120 and a second heat dissipation member 160b disposed between the capacitor module 170 and the second module 130.

[0068] The first heat dissipation member 160a may be disposed between the capacitor substrate 171 and the first semiconductor chip 123 facing the capacitor substrate 171, and the second heat dissipation member 160b may be disposed between the capacitor substrate 171 and the second semiconductor chip 133 facing the capacitor substrate 171. For example, the first heat dissipation member 160a may be disposed between the lower surface of the capacitor substrate 171 and the upper surface of the first upper semiconductor chip 123b of the first module 120. The second heat dissipation member 160b may be disposed between the upper surface of the capacitor substrate 171 and the lower surface of the second lower semiconductor chip 133a of the second module 130. Considering that the heat generated from the first semiconductor chip 123 and the second semiconductor chip 133 is greater than the heat generated from the upper surfaces of the first substrate 121 and the second substrate 131, the heat dissipation characteristics of the storage device can be effectively improved by arranging the first heat dissipation member 160a and the second heat dissipation member 160b. However, example embodiments are not limited thereto, and the first and second heat dissipation members 160a and 160b may also be disposed to make direct contact between the upper surface of the first substrate 121 and the lower surface of the capacitor substrate 171 , or between the lower surface of the second substrate 131 and the upper surface of the capacitor substrate 171 .

[0069] According to some example embodiments, the first heat dissipation member 160a and / or the second heat dissipation member 160b may be formed of a material having high thermal conductivity but being electrically insulating. The first heat dissipation member 160a and / or the second heat dissipation member 160b may include, for example, epoxy resin. In addition, the first heat dissipation member 160a and / or the second heat dissipation member 160b may be formed of a material that facilitates heat transfer (e.g., a carbon material having high thermal conductivity). The carbon material having high thermal conductivity may include graphite, graphene, and / or a composite material thereof, and may be prepared in a sheet form.

[0070] The first heat dissipation member 160a and / or the second heat dissipation member 160b may include, for example, mineral oil, grease, gap filling putty, phase change gel, phase change material pad, or particle filled epoxy resin. For example, commercially available grease includes ShinEtsuG750, ShinEtsu G751, ShinEtsu G765, and Berquist TIC-7500; phase change materials include ThermaxHF60110-BT, Chromerics T725, Chromerics T443, Chromerics T454, and Thermagon T-pcm905c; and thermally conductive adhesives may include Berquist 200U, Berquist HiFlow 225-U, BerquistHiFlow 225-UT, and Chromerics therm-A-form T642, but example embodiments are not limited thereto.

[0071] The capacitor module 170 may extend substantially parallel to at least one of the second plate 113a and the first plate 111a of the housing 110 within the housing 110, and may also extend substantially parallel to at least one of the first substrate 121 of the first module 120 and the second substrate 131 of the second module 130. The capacitor substrate 171 of the capacitor module 170 may extend in the first direction D1 and / or the second direction D2, so that an end of at least one side of the capacitor substrate 171 may be in physical contact with at least one side wall among the side walls of the first housing 111 of the housing 110. The capacitor substrate 171 is in direct and physical contact with at least a portion of the side wall of the housing 110, so that heat from the capacitor substrate 171 may be effectively dissipated to the housing 110. In an example embodiment, both the capacitor module 170 and the housing 110 physically connected to the capacitor module 170 may be grounded, and the capacitor substrate 171 may be in direct and physical contact with at least a portion of the side wall of the housing 110 to effectively move charges accumulated in the capacitor substrate 171 to the housing 110. In this manner, charge accumulation of components (eg, the first semiconductor chip 123 and / or the second semiconductor chip 133 ) within the housing 110 may be reduced or prevented to reduce or prevent electrostatic discharge.

[0072] The capacitor substrate 171 of the capacitor module 170 may be disposed on the stepped portion 115 of the housing 110, or may be placed inside the housing in the form of being inserted into a groove (not shown) of the housing 110. For example, one end of the capacitor module 170 may be disposed on the stepped portion 115 of one side wall of the first housing 111, and the other end of the capacitor module 170 may be disposed on a side wall opposite to the one side wall of the first housing 111. The capacitor module 170 may divide the accommodation space of the housing 110 into a lower accommodation space between the capacitor module 170 and the first plate 111a of the housing 110 and an upper accommodation space between the capacitor module 170 and the second plate 113a of the housing 110. Therefore, the first module 120 may be disposed in the lower accommodation space, and the second module 130 may be disposed in the upper accommodation space.

[0073] In example embodiments, the capacitor 173 may be provided in various forms. However, in some example embodiments, the capacitor 173 may be a tantalum capacitor 173t. The capacitor 173 may be provided in single or multiple configurations and may be provided on the upper or lower surface of the capacitor substrate 171, or on both the upper and lower surfaces of the capacitor substrate 171.

[0074] In example embodiments, at least one capacitor 173 (e.g., a plurality of capacitors 173) may be disposed in a region where the semiconductor chip of the first module 120 is not disposed. For example, a plurality of capacitors 173 may be installed in a region where the first upper semiconductor chip 123b and the first heat dissipation member 160a are not disposed between the capacitor substrate 171 and the first module 120. Since the first upper semiconductor chip 123b and the first heat dissipation member 160a are disposed to be sufficiently spaced apart from each other, a space may be ensured between the capacitor substrate 171 and the first substrate 121. Additional capacitors 173 may be easily installed in the ensured space.

[0075] In addition, a plurality of capacitors 173 may be installed in an area where the second lower semiconductor chip 133a and the second heat dissipation member 160b are not provided between the capacitor substrate 171 and the second module 130. Since the second lower semiconductor chip 133a and the second heat dissipation member 160b are provided to be sufficiently spaced apart from each other, a space may be ensured between the capacitor substrate 171 and the second substrate 131. Additional capacitors 173 may be easily installed in the ensured space.

[0076] In example embodiments, a heat dissipation member may also be disposed between the first module 120 and / or the second module 130 and the housing 110 .

[0077] The heat dissipation member may include a third heat dissipation member 160 c disposed between the first module 120 and the first case 111 and a fourth heat dissipation member 160 d disposed between the second module 130 and the second case 113 .

[0078] The third heat dissipation member 160c may be disposed between the first substrate 121 and the first housing 111, and the fourth heat dissipation member 160d may be disposed between the second substrate 131 and the second housing 113. For example, the third heat dissipation member 160c may be disposed between the upper surface of the first board 111a among the inner side surfaces of the first housing 111 and the lower surface of the first lower semiconductor chip 123a of the first module 120. The fourth heat dissipation member 160d may be disposed between the lower surface of the second board 113a among the inner side surfaces of the second housing 113 and the upper surface of the second upper semiconductor chip 133b of the second module 130. At least one of the third heat dissipation member 160c and the fourth heat dissipation member 160d may be disposed in a structure that provides direct contact between the first substrate 121 and the first housing 111 or between the second substrate 131 and the second housing 113.

[0079] In an example embodiment, the corresponding components may be threadedly connected to each other. For example, a screw hole may be provided in at least a portion of the component, and the component may be fastened by a screw. However, the method of fastening the corresponding components is not limited thereto, and various methods such as insertion, adhesion, etc. may be used to fasten the corresponding components.

[0080] The storage device having the above structure can significantly expand the installation space in the first module 120 and / or the second module 130 by modularizing the capacitor 173 and arranging the modularized capacitor 173 between the first module 120 and the second module 130. According to the related art, the capacitor is also mounted on the substrate on which the semiconductor chip such as the memory device is mounted. Due to the additionally mounted capacitor, the space for mounting the semiconductor chip such as the memory device is not large.

[0081] However, according to example embodiments, capacitors may be mounted on an additional capacitor substrate to expand a space in which the first semiconductor chip 123 of the first module is to be mounted and / or a space in which the second semiconductor chip 133 of the second module 130 is to be mounted, thereby improving the degree of freedom for mounting the first semiconductor chip 123 and / or the second semiconductor chip 133.

[0082] In addition, according to example embodiments, the capacitor module 170 may be provided with a first heat dissipation member 160a and a second heat dissipation member 160b, the first heat dissipation member 160a being interposed between the capacitor module 170 and the first module 120, and the second heat dissipation member 160b being interposed between the capacitor module 170 and the second module 130, so that sufficient space between the first module 120 and the capacitor module 170 and between the second module 130 and the capacitor module 170 can be ensured. Therefore, the degree of freedom for arranging the capacitor 173 within the storage device can also be increased. A greater number and variety of capacitors 173 can be arranged on the capacitor substrate 171, and the storage device can be stably driven by such an arrangement of the capacitors 173.

[0083] In the example embodiment, it is described that only the capacitor 173 is installed in the space between the first module 120 and / or the second module 130 and the capacitor module 170, but the example embodiment is not limited thereto. The capacitor substrate 171 may also be a circuit board, and various other types of active and passive elements may be further installed on the capacitor substrate 171.

[0084] In addition, the capacitor module 170 can be provided with a first heat dissipation member 160a and a second heat dissipation member 160b between the capacitor module 170 and the first module 120 and the second module 130 to effectively dissipate heat generated from the first semiconductor chip 123 mounted on the first module 120 and the second semiconductor chip 133 mounted on the second module 130 to the outside.

[0085] According to the related art, when two modules (e.g., the first module and the second module) are used, a heat dissipation member is only provided on the surface of the first module and / or the second module facing the housing. Therefore, there is no structure for heat dissipation between the first module and the second module. Therefore, it is difficult or substantially impossible to dissipate heat from the surfaces of the first module and the second module relative to each other. In the related art, due to this heat dissipation problem, the gap between the first module and the second module to ensure sufficient distance should be increased. The increased gap between the first module and the second module makes it difficult to make the storage device light, thin, short and small, and / or causes the gap between the second module and the inner side surface of the second housing to be reduced. In order to install the capacitor, a desired (or, predetermined) gap or a larger gap should be ensured. However, when the gap between the second module and the inner side surface of the second housing is reduced, the gap may not be enough to accommodate the capacitor therein.

[0086] In contrast, in an example embodiment, the capacitor module 170 may be disposed between the first module 120 and the second module 130 to substantially dissipate heat generated from the first semiconductor chip 123 and the second semiconductor chip 133 mounted on the surfaces of the first module 120 and the second module 130 along the first heat dissipation member 160a and the second heat dissipation member 160b, the capacitor substrate 171, and the housing 110. In addition, the above-mentioned space problem may be solved by installing the capacitor 173 as an additional module in the storage device. Solving the space problem has the effect of reducing the heat dissipation problem, reducing the size of the housing, and significantly reducing the processing area.

[0087] When an additional capacitor module 170 is employed in the storage device described in the example embodiment, a defect may occur in an element in the capacitor module 170. Alternatively, when components for heat dissipation (e.g., the first heat dissipation member 160a and the second heat dissipation member 160b) need to be replaced, the components can be easily replaced by replacing only the capacitor module 170 regardless of the first module 120 and / or the second module 130.

[0088] The storage device according to the example embodiment may be modified into various forms. In the following embodiments, the differences from the above-described embodiments will be mainly described.

[0089] Figure 5A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 5B It is along Figure 1 A cross-sectional view taken along line BB'.

[0090] refer to Figure 5A and Figure 5BIn the storage device according to the example embodiment, similar to the case where the first module 120 includes the first external connector 125, the second module 130 may include an external connector (e.g., a second external connector 135). When the second substrate 131 has a rectangular or square shape extending in the first direction D1, the second substrate 131 may have a first side portion 131a and a second side portion 131b opposite to each other in the first direction D1. The second module 130 may include a second external connector 135 located on the first side portion 131a of the second substrate 131.

[0091] The second external connector 135 can be arranged on the second substrate 131 on the second module 130 so that the external device (e.g., the host system) can be removed from it independently of the first external connector 125. An opening can be formed in the second housing 113 to expose the second external connector 135 to the outside, and the second external connector 135 and the external host system can be connected to each other through the opening. In this case, the second external connector 135 can be inserted into the socket of the external device to electrically connect the external device and the storage device. The storage device can send electrical signals to the external device and receive electrical signals from the external device through the second external connector 135, and can receive the power required for operation from the external device. The external device may include various types of host systems. For example, the host system may be a laptop computer, a netbook, a mobile phone, etc. The second external connector 135 of the second substrate 131 may include a female connector. Therefore, the storage device can be electrically connected to the host through the second external connector 135.

[0092] According to some embodiments, the second external connector 135 can be connected to an external device to send or receive signals and / or receive power. The second external connector 135 can be a connector configured to be connected to an external device based on the following standards: for example, a parallel advanced technology attachment (PATA) standard, a serial advanced technology attachment (SATA) standard, a small computer system interface (SCSI) standard, or a PCI Express (PCIe) standard. The SATA standard includes not only SATA-1, but also any SATA standard, such as SATA-2, SATA-3, or external SATA (e-SATA). The PCIe standard includes not only PCIe 1.0, but also any PCIe standard, such as PCIe 2.0, PCIe 2.1, PCIe 3.0, or PCIe 4.0. The SCSI standard includes any SCSI standard, such as a parallel SCSI standard, a serial connection SA-SCSI (SAS) standard, or an iSCSI standard. In some embodiments, the second external connector 135 can be a connector configured to support an M2 interface, an mSATA interface, or a 2.5" interface.

[0093] In an example embodiment, as shown in the figure, the first external connector 125 and the second external connector 135 may be disposed adjacent to each other on the same side wall. In some example embodiments, the first external connector 125 and the second external connector 135 may be disposed on different side walls or on at least one of the first plate 111a and the second plate 113a.

[0094] According to example embodiments, the storage device may have the above-described structure in which the first external connector 125 and the second external connector 135 are provided to increase space efficiency within the storage device.

[0095] When the first external connector 125 and the second external connector 135 are disposed adjacent to the same side wall, the gap between the first external connector 125 and the second external connector 135 should be greater than or equal to the desired (or, predetermined) gap so that the connector is connected to an external device. To this end, the gap between the first module 120 and the second module 130 also needs to be greater than or equal to the desired (or, predetermined) distance. Since the accommodation space in the housing 110 is limited, the gap between the first module 120 and the second module 130 can be increased, and the gap between the second module 130 and the second housing 113 can be reduced. According to the related art, it is difficult or substantially impossible to dissipate heat from the surfaces of the first module 120 and the second module 130 facing each other. In order to reduce this heat dissipation problem, the second semiconductor chip 133 should be disposed between the second module 130 and the second housing 113, however, it is difficult to arrange the second semiconductor chip 133 in the narrow gap between the second module 130 and the second housing 113. In contrast, according to example embodiments, the capacitor module 170 can be disposed between the first module 120 and the second module 130. As a result, the second semiconductor chip 133 may be mounted or less mounted between the second module 130 and the second housing 113. For example, in the drawings, a plurality of second semiconductor chips 133 are shown as being disposed on both a surface (upper surface) of the second substrate 131 facing the second housing 113 and a surface (lower surface) of the second substrate 131 facing the first substrate 121. However, example embodiments are not limited thereto, and the second semiconductor chip 133 may not be disposed or less disposed on the upper surface of the second substrate 131 facing the second housing 113, and the second semiconductor chip 133 may be disposed on the lower surface of the second substrate 131 facing the first substrate 121.

[0096] Fig. 6A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 6B It is along Figure 1 A cross-sectional view taken along line AA'.

[0097] refer to Fig. 6Aand Figure 6B , a memory device according to example embodiments may employ various types of capacitors, such as a radial capacitor 173r, as shown.

[0098] In example embodiments, the capacitor module 170 may include a capacitor substrate 171 and at least one radial capacitor 173r connected to the capacitor substrate 171. The radial capacitor 173r may be connected to one side of the capacitor substrate 171 having a substantially quadrilateral shape. When the capacitor substrate 171 is provided in a rectangular shape, the capacitor substrate 171 may have an opening provided in a region in which the radial capacitor 173r is provided.

[0099] The radial capacitor 173r inevitably protrudes upward and downward from the capacitor substrate 171 due to its radial shape. Therefore, an opening may be further provided in the first substrate 121 of the first module 120 and / or the second substrate 131 of the second module 130 to ensure a space in which the radial capacitor 173r is to be provided.

[0100] As described above, in example embodiments, the capacitor substrate 171 may be provided separately to increase the degree of freedom for arranging the semiconductor chips of the first module 120 and / or the second module 130. Therefore, various types of devices having various shapes may be mounted. In the present example embodiment, an example in which the capacitor 173 is a radial capacitor has been described, but other semiconductor devices other than the capacitor 173 or semiconductor devices having other shapes other than the radial shape may be mounted on the capacitor substrate 171.

[0101] Fig. 7A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a first module, a second module, and a capacitor substrate, and Figure 7B It is along Figure 1 A cross-sectional view taken along line AA'.

[0102] Reference Fig. 7A and Figure 7B, in the storage device according to the example embodiment, the flexible connection substrate 140 provided between the first module 120 and the second module 130 may be omitted. The first module 120 and the second module 130 may be connected to each other using the first contact portion 151a and the second contact portion 151b. For example, in the present example embodiment, the first contact portion 151a may electrically connect the capacitor module 170 and the first module 120, and the second contact portion 151b may electrically connect the capacitor module 170 and the second module 130. In addition, the first contact portion 151a and the second contact portion 151b may electrically connect the first module 120 and the second module 130 via the capacitor module 170. Therefore, the signal transmitted through the additional flexible connection substrate 140 may be transmitted between the first module 120 and the second module 130 through the first contact portion 151a and the second contact portion 151b.

[0103] In the present exemplary embodiment, each of the first contact portion 151a and the second contact portion 151b is shown as being provided as a single one. However, the exemplary embodiment is not limited thereto, and each of the first contact portion 151a and the second contact portion 151b may be provided as a plurality. In addition, the first contact portion 151a and the second contact portion 151b are described as being connected only to one side of the first module 120 and one side of the second module 130, respectively. However, the exemplary embodiment is not limited thereto, and the provided positions may also be changed in various ways.

[0104] According to example embodiments, the flexible connection substrate 140 may be omitted to reduce costs, and a process of connecting the flexible connection substrate 140 may be omitted to facilitate manufacturing of the memory device.

[0105] Fig. 8A is an exploded perspective view showing a portion of a memory device according to example embodiments, showing a capacitor substrate, and Figure 8B It is along Figure 1 A cross-sectional view taken along line BB'.

[0106] refer to Fig. 8A and Figure 8B , the capacitor module 170 may include two or more capacitor substrates 171 formed of different materials. For example, the capacitor module 170 may include a first capacitor substrate 171a, a second capacitor substrate 171b, and capacitors 173 (e.g., 173r, 173t) disposed on the first capacitor substrate 171a and / or the second capacitor substrate 171b. In addition to the capacitor 173, other active or passive elements may be further disposed on the first capacitor substrate 171a and / or the second capacitor substrate 171b.

[0107] The first capacitor substrate 171a and the second capacitor substrate 171b can be formed of two or more materials having different heat conduction effects. For example, the first capacitor substrate 171a can be a printed circuit board on which an interconnection is formed, and the portion other than the interconnection can be formed of an insulating material such as glass fiber and / or polymer plastic. The second capacitor substrate 171b can be a metal substrate formed of various metals or metal alloys with high thermal conductivity. The metal substrate can be manufactured by a press process. When the second capacitor substrate 171b is a metal substrate, an insulating layer can be inserted between the interconnection and the metal substrate on at least one surface of the second capacitor substrate 171b to electrically insulate the metal substrate and the interconnection.

[0108] The first capacitor substrate 171a and the second capacitor substrate 171b may be sequentially disposed along the first direction D1 or the second direction D2, and the side surface of the first capacitor substrate 171a and the side surface of the second capacitor substrate 171b may be in direct contact with each other. The upper surface of the first capacitor substrate 171a and the upper surface of the second capacitor substrate 171b may be the same surface, but example embodiments are not limited thereto. The areas of the first capacitor substrate 171a and the second capacitor substrate 171b are not limited, and the first capacitor substrate 171a and the second capacitor substrate 171b may be modified into various shapes according to the design rules of each model.

[0109] In example embodiments, an example using two capacitor substrates 171 has been described. However, example embodiments are not limited thereto, and a greater number of capacitor substrates 171 may be used. In this case, at least one capacitor substrate 171 may be formed of a material having a thermal conductivity different from that of the remaining capacitor substrates 171.

[0110] In the present example embodiment, at least one of the first capacitor substrate 171 a or the second capacitor substrate 171 b may or may not be in direct contact with the case 110 .

[0111] In example embodiments, the second capacitor substrate 171b may be disposed in a region in which elements with relatively high heat generation are disposed on opposite surfaces of the first module 120 and the second module 130. For example, the second capacitor substrate 171b may be disposed at a position facing the first semiconductor chip 123 with relatively high heat generation located on the upper surface of the first substrate 121 of the first module 120. In addition, the second capacitor substrate 171b may be disposed at a position facing the second semiconductor chip 133 with relatively high heat generation located on the lower surface of the second substrate 131 of the second module 130. The first heat dissipation member and / or the second heat dissipation member may be disposed between the first semiconductor chip 123 and / or the second semiconductor chip 133 mounted on the first module 120 and / or the second module 130 and the second capacitor substrate 171b so that heat from the first semiconductor chip 123 and / or the second semiconductor chip 133 may be effectively transferred to the second capacitor substrate 171b.

[0112] Therefore, according to example embodiments, heat dissipation characteristics of a memory device may be improved to drive a stable and highly reliable memory device.

[0113] Fig.9A is an exploded perspective view of a portion of a memory device according to an example embodiment, showing a capacitor substrate, Fig. 9B yes Fig.9A A perspective view of the assembled capacitor substrate shown in FIG. Fig. 9C It is along Figure 1 A cross-sectional view taken along line BB'.

[0114] Reference Fig.9A and Fig. 9B The capacitor module 170 may further include a support frame 171 f surrounding at least a portion of the capacitor substrate 171 .

[0115] As described above, the capacitor module 170 may be disposed between the first substrate 121 and the second substrate 131. In example embodiments, the support frame 171f may be a support structure for supporting the capacitor module 170 within the housing 110 so that the capacitor module 170 may be fixed within the housing 110.

[0116] When viewed in a cross-sectional view, the support frame 171f may be used as a support member on which the second capacitor substrate 171b is arranged. In addition, the support frame 171f may have a side wall provided on at least one edge and extending in the third direction D3. The side wall of the support frame 171f may be used to support the capacitor module 170 between the first module 120 and the second module 130, and to adjust and maintain the gap between the first module 120 and the second module 130.

[0117] The support frame 171f may be formed of various materials (eg, polymers such as plastic), but example embodiments are not limited thereto.

[0118] In addition, the support frame 171f may be provided to correspond to a portion of the capacitor substrate 171 (e.g., a portion adjacent to or corresponding to an area where a semiconductor chip with high heat generation is mounted). For example, the support frame 171f may be provided along the periphery of the second capacitor substrate 171b. The second capacitor substrate 171b may be formed of a material with high thermal conductivity (e.g., metal) and may be provided opposite to the semiconductor chip with high heat generation of the first module 120 and / or the second module 130. Therefore, the second capacitor substrate 171b may have a relatively high temperature compared to the first capacitor substrate 171a. The support frame 171f may be used to isolate the heat of the second capacitor substrate 171b so that the heat of the second capacitor substrate 171b does not affect the device in another area (e.g., a semiconductor chip provided in an area opposite to the first capacitor substrate 171a). Therefore, even when the heat generation is high, the device susceptible to heat may be protected to further stabilize the drive of the storage device.

[0119] According to example embodiments, the heat dissipation effect may be further improved by providing an additional structure for dissipating heat of a semiconductor chip having high heat generation on the capacitor module.

[0120] Fig. 10A is a perspective view of a portion of a memory device according to an example embodiment, showing a capacitor substrate, and Fig. 10B It is along Figure 1 A cross-sectional view taken along line BB'.

[0121] Reference Fig. 10A and Fig. 10B , the capacitor module 170 may include a cover portion 175 disposed on an upper surface and / or a lower surface of the capacitor substrate 171 .

[0122] As systems including storage devices become higher performance, various electronic devices may be used together with the storage devices. Therefore, a malfunction or failure in the storage device may be caused by electromagnetic waves inevitably generated in the various electronic devices. Therefore, it is desirable to shield the effect that may reduce the reliability of the storage device due to external electromagnetic waves (e.g., electromagnetic interference (EMI)).

[0123] The cover 175 may be a portion for shielding EMI and may block electromagnetic waves emitted from the first semiconductor chip 123 and the second semiconductor chip 133 to reduce and prevent the electromagnetic waves from affecting adjacent semiconductor chips. Therefore, even when electromagnetic waves are emitted, devices susceptible to nearby electromagnetic waves may be protected by the cover 175.

[0124] The cover portion 175 may be provided in a portion of the capacitor substrate 171 , for example, in response to a semiconductor chip from which a large amount of electromagnetic waves is emitted.

[0125] For example, the cover portion 175 may be disposed on the lower surface of the capacitor substrate 171 and may be disposed opposite to a semiconductor chip from which a relatively large amount of electromagnetic waves is emitted among the first semiconductor chips 123 disposed on the upper surface of the first substrate 121. In some example embodiments, the cover portion 175 may be disposed on the upper surface of the capacitor substrate 171 and may be disposed opposite to a semiconductor chip from which a relatively large amount of electromagnetic waves is emitted among the second semiconductor chips 133 disposed on the lower surface of the second substrate 131.

[0126] When viewed in a cross-sectional view, the cover portion 175 may protrude from the upper surface of the capacitor substrate 171 toward the second module 130 and / or may protrude from the bottom surface of the capacitor substrate 171 toward the first module 120, and when viewed in a plan view, the cover portion 175 surrounds at least a portion of the edge of the opposing semiconductor chip.

[0127] In an example embodiment, the cover 175 may have an annular shape surrounding the outer edge of the first semiconductor chip 123 and the second semiconductor chip 133. However, the shape of the cover 175 is not limited thereto, and the cover 175 may be a separated annular shape with a removed portion. For example, in an example embodiment, when viewed in a plan view, the cover 175 may have a quadrilateral annular shape (e.g., a square) corresponding to the shape of the first semiconductor chip 123 and the second semiconductor chip 133. However, the shape of the cover 175 is not limited thereto, and may be modified into various forms, such as being provided only on at least a portion of the four sides of the square, only on a portion corresponding to a vertex, or only between other chips adjacent to each other.

[0128] The storage device according to the example embodiments may be employed in various electronic devices that require storage media. For example, the storage device according to the example embodiments may be used as a portable SSD that replaces a hard disk drive used in a personal computer (PC), a laptop computer, etc. In addition, the SSD may be used in mobile devices such as smartphones, tablet PCs, digital cameras, MP3 players, personal digital assistants (PDAs), etc.

[0129] As described above, according to some example embodiments, an additional storage module may be included in the storage device to ensure the arrangement of components within the storage device and the installation space of the components. Therefore, the processing area of ​​the housing may be significantly reduced.

[0130] Furthermore, according to some example embodiments, an additional memory module may be included in the memory device to effectively dissipate heat generated from a component having high heat generation, thereby improving heat dissipation of the memory device.

[0131] Although some example embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations are possible without departing from the scope of the inventive concept as defined by the appended claims.

Claims

1. A storage device, comprising: a first module, the first module comprising a first substrate and at least one first semiconductor chip located on the first substrate; a second module, the second module being electrically connected to the first module and comprising a second substrate and at least one second semiconductor chip located on the second substrate; a capacitor module, the capacitor module being located between the first module and the second module, the capacitor module including at least one capacitor, and the capacitor module being electrically connected to at least one of the first module and the second module; as well as a housing configured to accommodate the first module, the second module, and the capacitor module therein, Wherein, at least a portion of the capacitor module is in physical contact with the housing.

2. The storage device according to claim 1, wherein: The capacitor module includes a capacitor substrate and at least one capacitor mounted on the capacitor substrate, and an end portion of at least one side of the capacitor substrate is in physical contact with the case.

3. The storage device according to claim 2, wherein: The housing is grounded.

4. The storage device according to claim 2, wherein: The capacitors in the capacitor module are radial capacitors.

5. The storage device according to claim 2, wherein: The capacitors in the capacitor module are tantalum capacitors.

6. The storage device according to claim 5, wherein: The capacitor is located in a first region between the capacitor substrate and the first module where the first semiconductor chip is not disposed or in a second region between the capacitor substrate and the second module where the second semiconductor chip is not disposed.

7. The storage device according to claim 1, further comprising: A heat dissipation member is located between the capacitor module and the first module and / or between the capacitor module and the second module.

8. The storage device according to claim 1, further comprising: a first contact portion, the first contact portion being located between the first substrate of the first module and the capacitor module; a second contact portion, the second contact portion being located between the second substrate of the second module and the capacitor module, The first substrate of the first module is electrically connected to the second substrate of the second module through the first contact portion and the second contact portion.

9. The storage device according to claim 2, further comprising: a cover portion, the cover portion being located on the capacitor substrate, Wherein, when viewed in a cross-sectional view, the cover protrudes from the capacitor substrate toward the first module and / or the second module, and when viewed in a plan view, the cover surrounds at least a portion of the first semiconductor chip and / or the second semiconductor chip.

10. The storage device according to claim 2, wherein: The capacitor substrate includes a first capacitor substrate and a second capacitor substrate each including different materials having different thermal conductivities.

11. The storage device according to claim 10, wherein: The second capacitor substrate includes a metal substrate.

12. The storage device according to claim 10, wherein: The capacitor module is along an edge of the first capacitor substrate and / or the second capacitor substrate, and The capacitor module further includes a support frame configured to adjust and maintain a gap between the first module and the second module.

13. The storage device according to claim 12, wherein: The support frame is along a periphery of one of the first capacitor substrate and the second capacitor substrate having a higher thermal conductivity.

14. The storage device according to claim 1, further comprising: A flexible connection substrate connects the first substrate of the first module and the second substrate of the second module.

15. The storage device according to claim 1, wherein: The housing comprises: a first housing, the first housing being opposite to one surface of the first module; and a second housing, the second housing being opposite to a surface of the second module, and The heat dissipation component is located between the first module and the first shell and / or between the second module and the second shell.

16. The storage device according to claim 1, wherein: The first module also includes a first external connector located at one side of the first substrate, connected to the first substrate, and exposed through an opening in the housing.

17. The storage device according to claim 16, wherein: The second module further includes a second external connector located at one side of the second substrate, connected to the second substrate, and exposed through an opening in the housing.

18. A storage device, comprising: A first module, a capacitor module, and a second module are sequentially stacked and electrically connected to each other, wherein: The first module includes a first substrate and at least one first semiconductor chip located on the first substrate. The capacitor module includes a capacitor substrate and at least one capacitor located on the capacitor substrate, and The second module includes a second substrate and at least one second semiconductor chip located on the second substrate.

19. The storage device according to claim 18, further comprising: A heat dissipation member is located between the capacitor substrate and the at least one first semiconductor chip and between the capacitor substrate and the at least one second semiconductor chip.

20. A capacitor module installed in a storage device, the capacitor module comprising: a first capacitor substrate and a second capacitor substrate having different thermal conductivities; at least one capacitor disposed on the first capacitor substrate and the second capacitor substrate; as well as A frame is provided along a periphery of at least one of the first capacitor substrate and the second capacitor substrate.

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