Spintronic device and in-memory computing apparatus

Abstract

Embodiments of the present application provide a spin synapse device and an in-memory computing device. The spin synapse device comprises: a substrate; and, from bottom to top, a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed on the substrate, the magnetic storage layer being connected with a conductive structure layer, and the magnetic storage layer being connected with a peripheral circuit through the top electrode layer and the conductive structure layer; wherein, there is a two-dimensional electron gas region at the interface of the complex oxide system layer, and under the condition that the magnetic storage layer receives a read-write voltage of the peripheral circuit, the magnetic storage layer is used to generate a spin current, the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes data reading or writing. Thus, the reliability of device reading is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of synapse, and in particular to a spin synapse device and an in-memory computing device. BACKGROUND

[0002] The development of artificial intelligence leads to rapid growth of demand for computing power, and the development of traditional von Neumann architecture is difficult to keep up with the rapid development of demand. Spintronic devices have become a new research direction in recent years due to their high speed, high energy efficiency, and long-term retention and durability characteristics. However, spintronic devices are limited by a small switching ratio, which leads to complex external circuit design and is not conducive to improving reading reliability. SUMMARY

[0003] Embodiments of the present application provide a spin synapse device and an in-memory computing device to achieve the effect of improving the high-low resistance ratio of spintronic devices and improving the reliability of device reading.

[0004] In a first aspect, embodiments of the present application provide a spin synapse device, comprising:

[0005] a substrate, and a bottom electrode layer, a complex oxide system layer, a magnetic storage layer, and a top electrode layer formed from bottom to top on the substrate, the magnetic storage layer being connected with a conductive structure layer, and the magnetic storage layer being connected with a peripheral circuit through the top electrode layer and the conductive structure layer;

[0006] wherein there is a two-dimensional electron gas region at the interface of the complex oxide system layer, and under the condition that the magnetic storage layer receives read-write voltage of the peripheral circuit, the magnetic storage layer is used to generate spin current, the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes reading or writing of data.

[0007] In a possible implementation, the magnetic storage layer comprises a heavy metal layer and a magnetic layer formed from bottom to top on the complex oxide system layer, the heavy metal layer extends beyond the boundary of the magnetic layer in a first direction and a second direction opposite to the first direction.

[0008] In a possible implementation, the conductive structure layer comprises a first conductive layer and a second conductive layer, the first conductive layer is connected with the part of the heavy metal layer extending beyond the complex oxide system layer in the first direction, and the second conductive layer is connected with the part of the heavy metal layer extending beyond the complex oxide system layer in the first direction.

[0009] In a possible implementation, the magnetic storage layer is used to generate spin current with different polarization directions to write data; the magnetic storage layer is used to generate spin current into the magnetic layer, inject the complex oxide system layer, and change the density of the two-dimensional electron gas to read data.

[0010] In a possible implementation, during the reading or writing of the spin synapse device, a write voltage is applied to the bottom electrode, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, charge current is injected into the heavy metal layer, and is converted into spin current through the spin-orbit coupling effect, the spin current enters the magnetic layer and also injects the complex oxide system to change the density of the two-dimensional electron gas.

[0011] In a possible implementation, the magnetic layer is a magnetic tunnel junction, wherein, during the writing of the magnetic storage layer, the top auxiliary voltage realizes the out-of-field spin-orbit torque flip of the ferromagnetic material in the magnetic layer through the spin transfer torque, and injects spin current into the two-dimensional electron gas region to change the conductivity between the bottom electrode and the first conductive layer.

[0012] In a possible implementation, during the reading of the magnetic storage layer, the bottom electrode is grounded, a top auxiliary voltage is applied to the top electrode layer, spin current is injected into the two-dimensional electron gas region to change the density of the two-dimensional electron gas, and the resistance between the bottom electrode and the first conductive layer of the bottom electrode is read to indicate the read information.

[0013] In a possible implementation, the complex oxide system layer includes one or more complex oxides.

[0014] In a second aspect, the embodiments of the present application provide an in-memory computing device, and the spin synapse device described above is used as a synapse device in binary or multi-value in-memory computing.

[0015] In a possible implementation,

[0016] During the in-memory computing weight modulation process of the in-memory computing device, the spin-orbit torque current of the magnetic storage layer drives the movement of the magnetic domain, the proportion of the spin direction of the magnetic storage layer changes, and different weights are linearly set;

[0017] During the in-memory computing data reading process of the in-memory computing device, different proportions of the spin direction are between the maximum charge and the minimum charge, and different conductance values are exhibited, and when the read voltage is applied, the in-memory multiplication and addition operation is realized.

[0018] The spin synapse device and in-memory computing device provided by the embodiment of the present application comprises a substrate; a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed from bottom to top on the substrate, the magnetic storage layer is connected with a conductive structure layer, and the magnetic storage layer is connected with a peripheral circuit through the top electrode layer and the conductive structure layer; wherein, there is a two-dimensional electron gas region at the interface of the complex oxide system layer, and the magnetic storage layer is used for generating spin current under the condition that the magnetic storage layer receives the read-write voltage of the peripheral circuit, the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes the reading or writing of data. Therefore, in the scheme of the present application, the spin synapse device generates a two-dimensional electron gas at the interface through the complex oxide layer, and changes the two-dimensional electron gas density under the spin-charge conversion. In the information writing stage, different spin polarization directions bring different changes of the two-dimensional electron gas density, and in the reading stage, the two-dimensional electron gas density changes when reading the spin polarization, thereby enhancing the high-low resistance ratio of the device. The change of the two-dimensional electron gas density generated by the area magnetization direction causes the change of the high-low resistance state of the device, which can be used as a synapse device in binary or multi-value in-memory computing, improves the high-low resistance ratio of the spin electronic device, and improves the reliability of the device reading. BRIEF DESCRIPTION OF DRAWINGS

[0019] The drawings incorporated into the specification and forming part of the specification, show embodiments consistent with the present application, and together with the specification, serve to explain the principles of the present application.

[0020] Figure 1 A structural schematic diagram of the spin synapse device provided by the present application is shown in the following figure.

[0021] Figure 2 A read-write mechanism of the spin synapse device provided by the present application is shown in the following figure.

[0022] Figure 3 A preparation flowchart of the spin synapse device provided by the present application is shown in the following figure.

[0023] Figure 4 An in-memory computing operation of the in-memory computing application of the spin synapse device provided by the present application is shown in the following figure.

[0024] The above drawings have shown the specific embodiments of the present application, and more detailed descriptions will be given in the following. These drawings and textual descriptions are not intended to limit the scope of the concept of the present application by any means, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0025] The exemplary embodiments will be described in detail below with reference to the drawings. The following description is presented in connection with the accompanying drawings, in which the same reference numerals are used in different drawings to refer to the same or similar elements unless otherwise described. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims.

[0026] Figure 1 A schematic diagram of a spin synaptic device according to the present application is shown in FIG. 1, which includes: Figure 1

[0027] a substrate; and, from bottom to top, a bottom electrode layer, a complex oxide system layer, a magnetic storage layer, and a top electrode layer formed on the substrate, the magnetic storage layer being connected with a conductive structure layer, and the magnetic storage layer being connected with a peripheral circuit through the top electrode layer and the conductive structure layer;

[0028] wherein, there is a two-dimensional electron gas region at the interface of the complex oxide system layer, and in the case that the magnetic storage layer receives read-write voltage from the peripheral circuit, the magnetic storage layer is used to generate spin current, the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes data reading or writing.

[0029] In the present embodiment, a two-dimensional electron gas (2DEG) is a system of electrons confined to move in two dimensions. This electron gas is typically formed at the interface of a heterojunction, where electrons are confined in a two-dimensional region perpendicular to the interface due to band discontinuity and quantum confinement. Within this region, electrons can move freely along the interface plane, exhibiting quantized electronic properties. The two-dimensional electron gas density refers to the number of electrons per unit area in a two-dimensional electron gas system. A two-dimensional electron gas is a quantum state of electrons where their motion is restricted in one direction, while they can move freely in the other two directions.

[0030] In the present embodiment, a spin synaptic device generates a two-dimensional electron gas at the interface through a complex oxide system, and a heavy metal / ferromagnetic layer in the upper layer injects spin current to change the two-dimensional electron gas density through spin-charge conversion. In the case of writing information, different spin polarization directions result in different changes in two-dimensional electron gas density, and in the reading stage, the two-dimensional electron gas density changes when reading spin polarization, enhancing the high-low resistance ratio of the device. By introducing a two-dimensional electron gas and spin-charge conversion effect, the present application achieves an increase in the magnetic resistance ratio. This achieves the effect of improving the high-low resistance ratio of the spintronic device and improving the reliability of the device reading. ​

[0031] In one example, the magnetic storage layer includes a heavy metal layer and a magnetic layer formed from bottom to top on a complex oxide system layer, the heavy metal layer extending in opposite first and second directions beyond the boundaries of the magnetic layer in the first and second directions.

[0032] Understandably, the combination of a heavy metal layer and a magnetic layer can form an information storage medium with unique physical properties. In this structure, the heavy metal layer typically provides the spin-orbit moment effect, while the magnetic layer is responsible for storing information. This combination can be used to realize novel storage technologies such as magnetic random access memory.

[0033] The spin-orbit moment effect is a novel magnetic effect that utilizes electric current in non-magnetic metals to modulate domain flipping, domain wall movement, and spin dynamics in ferromagnetic layers. In heavy metal / ferromagnetic metal heterostructures, current-driven magnetic moment manipulation can be achieved through interfacial spin-orbit coupling. Magnetic layers typically exhibit perpendicular magnetic anisotropy, meaning their magnetic moments tend to align along a specific direction. This characteristic contributes to improving the stability and interference immunity of storage media.

[0034] In one example, the conductive structure layer includes a first conductive layer and a second conductive layer. The first conductive layer is connected to the portion of the heavy metal layer that extends beyond the complex oxide system layer in a first direction, and the second conductive layer is connected to the portion of the heavy metal layer that extends beyond the complex oxide system layer in the first direction.

[0035] like Figure 1 As shown, the overall structure of the device, from bottom to top, includes a bottom electrode, a complex oxide system layer (including a first complex oxide layer, a second complex oxide layer, and a two-dimensional electron gas region formed at the interface), a heavy metal layer, a magnetic layer, and a top electrode. The top and bottom electrodes are conductive materials connected to the external circuitry, such as one or more of Ti / Au, Ni / Au, TiN, SrRuO3, W, Ru, Ta, and Pt. The heavy metal layer extends laterally, serving as the bottom electrode and the second conductive layer connected to the external circuitry.

[0036] In one example, the complex oxide system is composed of one or more complex oxides, such as SrTiO3, LaAlO3 / SrTiO3, BiFeO3 / SrTiO3, or metal oxide / SrTiO3 system, forming a two-dimensional electron gas at the interface. The complex oxide layer forms a two-dimensional electron gas at the interface mainly through the interface effect, and the main materials include: SrTiO3, LaMnO3 / SrTiO3, BiFeO3 / SrTiO3, LaAlO3 / SrTiO3, or other metal oxide / SrTiO3 system, wherein the metal oxide includes one or more of AlOx, RuO, ZnO, CuO, WOx, TaOx, etc. The magnetic layer as a functional layer for storing information can be a magnetic single-layer material such as one or more of Co, CoFe, CoFeB, or a spin information storage heterostructure such as one or more of Ta / CoFeB / MgO, W / CoFeB / MgO, Pt / CoFeB / MgO, Co / Pt, IrMn / CoFeB / MgO multilayer structure, or a magnetic tunnel junction based on the basic structure of heavy metal layer / free layer / MgO / reference layer such as Ta / CoFeB / MgO / CoFeB, W / CoFeB / MgO / CoFeB, Pt / CoFeB / MgO / CoFeB, IrMn / CoFeB / MgO / CoFeB, etc.

[0037] In one example, the magnetic storage layer is used to generate spin current with different polarization directions to write data; the magnetic storage layer is used to generate spin current into the magnetic layer, inject the complex oxide system layer, and change the two-dimensional electron gas density to read data.

[0038] The heavy metal layer and the magnetic layer are combined to form an information storage medium adjacent to the complex oxide layer, and the spin magnetization in the magnetic layer represents binary information. The charge current is injected into the heavy metal layer, which is converted into spin current through the spin-orbit coupling effect, and due to the spin current gradient, it is injected into the adjacent magnetic layer and the complex oxide layer interface. The two-dimensional electron gas density generated by different spin directions is different, generating a resistance response ΔR, and then the response voltage size depends on the polarization direction of the spin injection and has non-volatility. During the read operation, the spin-charge conversion effect of the spin current of the ferromagnetic and complex oxide layers is used to improve the high-low resistance state magnetoresistance ratio.

[0039] In one example, during the read or write process of the spin synapse device, a write voltage is applied to the bottom electrode, a top auxiliary voltage is applied to the top electrode, the first conductive layer and the second conductive layer are grounded, the charge current is injected into the heavy metal layer, which is converted into spin current through the spin-orbit coupling effect, and the spin current enters the magnetic layer at the same time, and also injects the complex oxide system to change the two-dimensional electron gas density.

[0040] Wherein, in the writing information, different spin polarization direction brings different two-dimensional electron gas density change, in the reading stage, reading spin polarization, two-dimensional electron gas density change, enhancing device high and low resistance ratio. Area magnetization direction produces two-dimensional electron gas density change, resulting in device high and low resistance state change, can be used as binary or multi-value storage in the calculation of synaptic device.

[0041] In an example, the magnetic layer is a magnetic tunnel junction, wherein, in the writing process of the magnetic storage layer, the top auxiliary voltage realizes the field-free spin-orbit torque flip of the ferromagnetic material in the magnetic layer through the spin transfer torque, and injects spin current into the two-dimensional electron gas region, changing the conductivity between the bottom electrode and the first conductive layer.

[0042] The device read-write process is shown in Figure 2 The current is injected from the bottom electrode 1 to the heavy metal layer during the writing of 0, and the heavy metal layer generates longitudinal spin current due to spin-orbit coupling. At this time, the top auxiliary voltage of the top electrode can drive the magnetization of the magnetic layer to a unified spin direction, such as spin upward. At this time, the device represents the storage state "0". In the writing of "1", the current polarity is changed, the heavy metal layer generates spin current with opposite spin direction, and under the action of the top auxiliary voltage of the top electrode, it is driven to the opposite spin direction of the former. At this time, the device represents the storage state "1".

[0043] In an example, in the reading process of the magnetic storage layer, the bottom electrode is grounded, and the top auxiliary voltage is applied to the top electrode to inject spin current into the two-dimensional electron gas region, change the two-dimensional electron gas density, and read the resistance between the bottom electrode layer and the first conductive layer. Resistance is used to indicate the read information.

[0044] The device read-write process is shown in Figure 2 In the reading process of the device, the reading voltage is applied to the top electrode, the spin current passes through the magnetic layer and tunnels into the two-dimensional electron gas region, and under the action of spin-charge conversion, the spin polarization is converted into charge, and under the action of fixed electric field, electric charge flow is formed, causing the two-dimensional electron gas density to change, resulting in resistance value difference. Therefore, in the reading process, the magnetization information "0" and the magnetization information "1" cause the resistance of the two-dimensional electron gas region to decrease or increase. The purpose of using the resistance of the two-dimensional electron gas region to represent the ferromagnetic information is achieved, in the process of ensuring the writing speed and energy efficiency, the margin of the device reading is expanded, and the reliability of the device is improved.

[0045] In an example, the preparation process of the spin synaptic device is shown in Figure 3

[0046] ​First, the bottom electrode 3 and the complex oxide layer are grown on a silicon, silicon oxide or SrTiO3 substrate by a laser pulse deposition method to form a two-dimensional electron gas basic structure, and then a junction region is etched by an ion beam etching technique, and the conductive layer and the upper two-dimensional electron gas are isolated by SiO2.

[0047] Further, a heavy metal layer, a magnetic layer and a top electrode are grown on the material layer by a magnetron sputtering method. The heavy metal layer and the top electrode are patterned and etched by photolithography and ion beam etching techniques to prepare a complete device.

[0048] Figure 4 The spin synapse device provided in the present application is used for in-memory computing operation of the in-memory computing application of the spin synapse device, and serves as a synapse device in binary or multi-value in-memory computing.

[0049] The spin synapse device can refer to the method embodiments described above, and has similar implementation principles and technical effects, which will not be described here again in this embodiment.

[0050] In-memory computing (IMC) is a computing paradigm that tightly integrates data processing and storage, aiming to solve the "memory wall" problem in traditional von Neumann architecture. In the traditional architecture, the processor and the memory are separated, and data needs to be transmitted back and forth between them, which causes a significant performance bottleneck. In-memory computing reduces the number of data movements by performing calculations directly in the storage device, thereby reducing energy consumption and latency, and improving the efficiency and response speed of the system. In-memory computing technology usually uses specific storage devices that can not only store data but also perform simple calculation operations such as addition, multiplication or comparison.

[0051] In an example, the in-memory computing method of the spin synapse device, the spin-orbit torque current locally switches the magnetization direction of the region, the spin-charge conversion generates a two-dimensional electron gas with varying density, resulting in changes in the high and low resistance states of the device, which can serve as a synapse device in binary or multi-value in-memory computing. In the in-memory computing weight modulation, the spin-orbit torque current drives the magnetic domain to move, and the spin direction proportion of the magnetic layer changes, and different weights are set linearly. In the reading process, different spin direction proportions are between the maximum charge and the minimum charge, showing different conductance values. When the reading voltage is applied, the in-memory multiplication and addition operation is realized in the in-memory computing work of the device.

[0052] As shown in the neural network model of a in the prior art, a large number of matrix multiplication and addition operations are required, where Y is the neuron output value, X is the input value, and w is the synapse weight. In-memory computing uses the conductance of the device itself and Kirchhoff calculation, and the in-memory computing operation of the spin synapse device provided in the present application is used for in-memory computing operation of the in-memory computing application of the spin synapse device, and serves as a synapse device in binary or multi-value in-memory computing. i greatly simplifies the time and complexity of the multiply-add calculation.

[0053] In this embodiment, the introduction of two-dimensional electron gas further increases the reliability of the device in the multi-value in-memory computing process. During the weight modulation in the in-memory computing training process, the spin-orbit torque current drives the magnetic domain movement, and the spin direction of the magnetic layer changes. As shown in the spin direction of the b-e magnetic layer in Figure 4 , the proportion of the spin direction represents different multi-value information, and different weights can be linearly written through the movement of the magnetic domain. During the in-memory computing process, the proportion of the spin also affects the electron density of the two-dimensional electron gas, causing the device conductance to change, which presents a linear mapping relationship with the weight value. Figure 4 , the consistency of the spin polarization of b in Figure 4 and e in causes the maximum two-dimensional electron gas to increase or decrease, resulting in the minimum and maximum read resistance values, respectively, representing the binary “0” and “1” signals. The above characteristics can be used as binary neural network synapses for binary information storage, weight modulation, and in-memory computing based on Kirchhoff's law.

[0054] Further, different proportions of spin direction between maximum charge and minimum charge exhibit different conductance values, and when a read voltage is applied, multi-value in-memory multiply-add operations are realized. As shown in the multi-value implementation of c-d in Figure 4 , the spin direction of the magnetization layer and the charge density of the two-dimensional electron region show that in the scenario requiring multi-value weights, the spin-orbit torque current can be used to locally switch the magnetization direction of the magnetic layer, generating spin up and down magnetic domains with different proportions in the magnetization layer. During the read process, the spin current with different polarization directions will cause the two-dimensional electron gas density to be between the maximum value (b in Figure 4 ) and the minimum value (e in Figure 4 ), presenting an intermediate state of resistance, as shown in c in Figure 4 and d in Figure 4 . Among the four types of spin electron distribution, the device conductance can be represented as σ1, σ2, σ3, and σ4, respectively, to realize the function of i in the weight adjustment of binary or multi-value synapses. It is worth noting that the number of multi-value resistance states is not limited to the four shown above, but can be designed to achieve N resistance states, where N ≥ 4.

[0055] In the above embodiments, it should be understood that the processor can be a central processing unit (CPU), and can also be other general-purpose processors, digital signal processing processors (DSP), application specific integrated circuits (ASIC), etc. The general-purpose processor can be a microprocessor or any conventional processor, etc. The steps of the disclosed method can be directly embodied as hardware processor execution, or a combination of hardware and software modules in the processor.

[0056] The memory can include a random access memory (RAM), and can also include a non-volatile memory (NVM), such as at least one disk memory.

[0057] The bus can be an industry standard architecture (ISA) bus, a peripheral component interconnect (PCI) bus, an extended industry standard architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, the bus in the drawings of the present application does not limit to only one bus or one type of bus.

[0058] The present application also provides a computer program product, comprising a computer program, which, when executed by a processor, implements the above method.

[0059] The present application also provides a computer readable storage medium, which stores computer execution instructions, and when a processor executes the computer execution instructions, the above method is implemented.

[0060] The above readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The readable storage medium can be any available medium that can be accessed by a general-purpose or special-purpose computer.

[0061] An example readable storage medium is coupled to the processor such that the processor can read information from the readable storage medium and can write information to the readable storage medium. Of course, the readable storage medium can also be a part of the processor. The processor and the readable storage medium can be located in an application specific integrated circuit (ASIC). Of course, the processor and the readable storage medium can also exist as discrete components in the device.

[0062] The division of units is only a logical functional division, and in actual implementation, there can be another division manner, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some interfaces, devices or units, and can be electrical, mechanical or other forms.

[0063] The units described as separate components can or can not be physically separated, and the components shown as units can or can not be physical units, that is, can be located in one place, or can be distributed on a plurality of network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment scheme.

[0064] In addition, the functional units in each embodiment of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit.

[0065] If the functions are realized in the form of software function units and sold or used as independent products, they can be stored in a computer readable storage medium. According to such understanding, the technical scheme of the present application or the part of the present application which essentially contributes to the prior art or the part of the technical scheme can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method of each embodiment of the present application. The foregoing storage medium includes a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various program code storage media.

[0066] Those skilled in the art can understand that all or part of the steps of the above-mentioned method embodiments can be completed by program instruction related hardware. The foregoing program can be stored in a computer readable storage medium. The program executes to perform the steps of the above-mentioned method embodiments; and the foregoing storage medium includes various media capable of storing program codes, such as ROM, RAM, magnetic disk, or optical disk.

[0067] Finally, it should be noted that other embodiments of the present application will readily occur to those skilled in the art upon consideration of the specification and practice of the present application disclosed herein. The present application is intended to include all such variations as fall within the general scope of the application, and includes the generic principles disclosed and the best mode known to the inventors to be currently practiced as well as variations thereof, without departing from the scope of the present application as defined by the claims. The specification and examples give the best application of the present application as known to at least one of the inventors at the time of the filing of this application. It is to be understood that since numerous modifications and changes will readily occur to those skilled in the art, the application is not to be limited to the exact construction and operation as illustrated and described. Accordingly, all such variations are intended to be included within the scope of the present application as defined in the claims. The application is to be limited only by the claims.

Claims

1. A spintronic device, characterized by, The spin synapse device comprises: a substrate; a bottom electrode layer, a complex oxide system layer, a magnetic storage layer and a top electrode layer formed in sequence from bottom to top on the substrate, the magnetic storage layer being connected with a conductive structure layer, and the magnetic storage layer being connected with a peripheral circuit through the top electrode layer and the conductive structure layer; wherein the magnetic storage layer comprises a heavy metal layer and a magnetic layer formed in sequence from bottom to top on the complex oxide system layer, the heavy metal layer extending beyond the boundary of the magnetic layer in opposite first and second directions; the conductive structure layer comprises a first conductive layer and a second conductive layer, the first conductive layer being connected with the heavy metal layer beyond the complex oxide system layer in the first direction, and the second conductive layer being connected with the heavy metal layer beyond the complex oxide system layer in the first direction; the complex oxide system layer comprises a first complex oxide layer, a two-dimensional electron gas region formed at an interface, and a second complex oxide layer in sequence from top to bottom; the two-dimensional electron gas region is at the interface of the complex oxide system layer, and the magnetic storage layer is used to generate a spin current under the condition that the magnetic storage layer receives a read-write voltage of the peripheral circuit, the spin current is injected into the complex oxide system layer to change the two-dimensional electron gas density of the two-dimensional electron gas region, so that the magnetic storage layer completes data reading or writing.

2. The spintronic device of claim 1, wherein the spintronic device is a spin transistor. The magnetic storage layer is used to generate spin currents with different polarization directions to write data; the magnetic storage layer is used to generate spin currents into the magnetic layer and inject the complex oxide system layer to change the two-dimensional electron gas density to read data.

3. A spintronic device as claimed in claim 2, wherein In the reading or writing process of the spin synapse device, a write voltage is applied to the bottom electrode layer, a top auxiliary voltage is applied to the top electrode layer, the first conductive layer and the second conductive layer are grounded, charge current is injected into the heavy metal layer, and the spin current is converted into the spin current through the spin-orbit coupling effect, the spin current is injected into the complex oxide system layer while entering the magnetic layer, and the two-dimensional electron gas density is changed.

4. A spintronic device as claimed in claim 3, wherein In the writing process of the magnetic storage layer, the top auxiliary voltage realizes the spin-orbit torque flip of the ferromagnetic material in the magnetic layer through the spin transfer torque of the spin current, and injects the spin current into the two-dimensional electron gas region to change the conductivity between the bottom electrode layer and the first conductive layer.

5. The spintronic device of claim 3, wherein the spintronic device is a spin transistor. In the reading process of the magnetic storage layer, the bottom electrode layer is grounded, the top auxiliary voltage is applied, the spin current is injected into the two-dimensional electron gas region, the two-dimensional electron gas density is changed, the resistance between the bottom electrode layer and the first conductive layer is read, and the resistance is used to indicate the read information.

6. The spintronic device of any one of claims 1 to 5, wherein, The complex oxide system layer comprises one or more complex oxides.

7. An in-memory computing device, comprising: The spin synapse device is used for binary or multi-value in-memory computing.

8. The in-memory computing device of claim 7, wherein In the in-memory computing weight modulation process, the spin orbit torque current of the magnetic storage layer drives the magnetic domain to move, the spin direction proportion of the magnetic storage layer changes, and different weights are linearly set; In the in-memory computing data reading process, different spin direction proportions are between the maximum charge and the minimum charge, different conductance values are shown, and in-memory multiplication and addition operations are realized when the reading voltage is applied.

Images