Wire bonding method and apparatus

Abstract

The invention relates to a wire bonding method and apparatus. A method of forming a bond wire connection includes: providing a wire bonder including a bonding wedge having a wire guide; and forming a wire bonding ring by first bonding a bonding wire to the first bonding surface using a bonding wedge, then moving the wire bonder in a ring pattern, whereby the bonding wire passes through the wire guide, and then bonding the bonding wire to the second bonding surface using the bonding wedge, moving the wire bonder in a loop pattern includes a reverse movement whereby the wire bonder moves away from the second bonding surface, and wherein the wire guide is formed of a material having a higher material hardness than the bonding wire.

Description

Technical Field

[0001] The present invention relates to a wire bonding method and apparatus. Background Art

[0002] Semiconductor devices are typically arranged in a package that accommodates and protects the die and associated electrical connections from the external environment. Discrete packages may include one or more semiconductor die mounted on a metal lead frame. A power module may include several die mounted on a power electronic carrier (e.g., a DBC (direct bonded copper) substrate, an IMS (insulated metal substrate) or an AMB (active metal brazing) substrate), and a housing above the power electronic carrier. In any type of package, electrical interconnections must be made between various components, such as die-to-lead connections, die-to-die connections, bonding pad-to-bonding pad connections, etc. There are various ways to form these electrical interconnections. One such way is wire bonding technology. It is desirable to improve the quality, performance, and cost of wire bonding. Summary of the invention

[0003] A method for forming a bonding wire connection is disclosed. According to an embodiment, the method includes: providing a wire bonder including a bonding wedge having a wire guide; and forming a wire bond loop by first bonding a bonding wire to a first bonding surface using the bonding wedge, then moving the bonding wedge in a loop pattern whereby the bonding wire passes through the wire guide, and then bonding the bonding wire to a second bonding surface using the bonding wedge, wherein moving the bonding wedge in the loop pattern includes a back-off movement whereby the bonding wedge moves away from the second bonding surface after bonding the first bond, and wherein the wire guide is formed of a material having a higher material hardness than the bonding wire.

[0004] A semiconductor device is disclosed. According to an embodiment, the semiconductor device includes a bonding wire connection forming an electrical connection of the semiconductor device, wherein the bonding wire connection includes a wire bonding loop between a first bonding surface and a second bonding surface, wherein the wire bonding loop is formed by a bonding wire including copper having a diameter between 400 μm and 500 μm, wherein a bonding loop length of the wire bonding loop is ≤5500 μm, and wherein a bonding loop height of the wire bonding loop is ≤25000 μm. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The elements of the drawings are not necessarily drawn to scale relative to each other. The same reference numerals represent corresponding similar parts. The features of the various illustrated embodiments may be combined unless they exclude each other. The embodiments are illustrated in the drawings and described in detail in the following description.

[0006] Figure 1 A wire bond loop from a bond wire connection is shown in accordance with an embodiment.

[0007] Figure 2 The machining of a joining wedge according to an embodiment is shown.

[0008] Figures 3A-3D A method of forming a wire bonding loop at various stages in the movement of a bonding wedge is shown in accordance with an embodiment.

[0009] Figure 4 A ring pattern is shown along which an engagement wedge follows according to an embodiment. DETAILED DESCRIPTION

[0010] Disclosed herein are methods for forming a wire bond connection and embodiments of corresponding wire bond connections. The wire bond connection includes a wire bond loop between a first bonding surface and a second bonding surface. The physical properties of the wire bond loop, specifically, the relationship between the bond loop height and the bond loop length, are favorable. Typically, when forming a wire bond loop, there is a tradeoff between the minimum obtainable bond loop height and the bond loop length. As the bond loop length decreases, the bond loop height must be increased to reliably achieve the wire bond connection. The method disclosed herein is advantageous for forming a low bond loop height value that would otherwise not be achievable relative to the bond loop length. In particular, the method includes using a bonding wedge having a wire guide that is harder than the bonding wire forming the wire bond loop. In addition, the method includes using a back-movement into the loop pattern, wherein the bonding wedge moves backward and away from the expected subsequent bonding point. The combination of the harder wire guide bonding wedge and the back-movement results in the shaping of the bonding wire during the loop formation, which reliably produces a low profile wire bond loop.

[0011] refer to Figure 1, a bonding wire connection 100 according to an embodiment is shown. The bonding wire connection 100 forms an electrical connection of a semiconductor device. For example, the bonding wire connection 100 can form an electrical connection between structured metal pads of a circuit carrier (e.g., a PCB (printed circuit board), a DBC (direct bonded copper) substrate, an IMS (insulated substrate) substrate, or an AMB (active metal brazing) substrate), and / or can form an electrical connection between a bonding pad from a semiconductor die and a circuit carrier, a lead frame, or other semiconductor die. The bonding wire connection 100 includes a wire bonding ring 102 between a first bonding surface 104 and a second bonding surface 106. The first bonding surface 104 and the second bonding surface 106 are metal surfaces configured to cooperate with bonding wires. For example, the first bonding surface 104 and the second bonding surface 106 can be provided by one or two bonding pads from a semiconductor die, a circuit carrier, a lead frame, etc. The first bonding surface 104 and the second bonding surface 106 can be provided by a metal structure including and / or plated with, for example, Cu, Ni, Ag, Au, Pd, Pt, Ni. As shown, the first bonding surface 104 and the second bonding surface 106 are on the same vertical level. In other cases, the first bonding surface 104 and the second bonding surface 106 can be vertically offset from each other, for example, in the case where a wire bonding ring 102 is formed between a semiconductor die and a lead frame or a circuit carrier. As shown, the bonding wire connection 100 includes a single wire bonding ring 102 between two metal structures separated from each other. In other embodiments, the bonding wire connection 100 may include a plurality of wire bonding rings 102, for example, a bonding wire may be fixed to a single bonding pad from a circuit carrier by a plurality of wire bonding rings 102, for example, to enhance mechanical attachment and / or reduce resistance. In this case, the first bonding surface 104 and the second bonding surface 106 may come from the same continuous metal structure.

[0012] The wire bonding ring 102 is formed by a bonding wire 108. The bonding wire 108 includes a low resistance metal suitable for interconnecting semiconductor devices. For example, the metal bonding wire 108 may include copper, aluminum, silver and alloys thereof. According to an embodiment, the metal bonding wire 108 is a copper bonding wire 108, that is, a bonding wire 108 formed of substantially pure copper (e.g., 95% purity or 99% purity copper). For example, the diameter of the bonding wire 108 may be in the range of 25 μm to 750 μm. According to an embodiment, the diameter of the bonding wire 108 is in the range of 300 μm to 500 μm. In a more specific embodiment, the bonding wire 108 is a copper bonding wire 108 with a diameter of 400 μm, which means that the nominal diameter value of the wire is 400 μm. The bonding wire 108 may have a circular cross-section. Other cross-sectional geometries such as rectangular geometries are also possible.

[0013] refer to Figure 2 , a method for forming a bonding wire connection 100 includes providing a wire bonder 200. The wire bonder 200 includes a bonding wedge 202 having a wire guide 204. The bonding wedge 202 can be connected to a shaft (not shown) and can be actuated by a programmable robotic mechanism. The wire guide 204 forms a channel on the bonding wedge 202, the size of which is designed to hold and guide the bonding wire 108 as the bonding wire 108 moves through the wire guide 204. The wire guide 204 includes a backing (not shown) corresponding to the bottom surface of the channel. The wire bonder 200 is configured to feed a certain length of bonding wire 108 through the wire guide 204 so that the bonding wire 108 is wrapped around the tip 206 of the bonding wedge 202. The tip 206 can be used to apply mechanical pressure and ultrasonic energy and / or manipulate the bonding wire 108. The bonding wedge 202 may additionally include a blade 208 between the wire guide 204 and the tip 206 of the bonding wedge 202. The blade 208 may be slid outward and used to sever the bonding wire 108 as desired.

[0014] According to an embodiment, the lead guide 204 is formed of a material having a higher material hardness than the bonding wire 108. Material hardness refers to the degree to which a material is irreversibly deformed in response to an applied force, i.e., the plasticity of the material. Material hardness can be measured according to Rockwell, Vickers, Shore, or Brinell scales. Therefore, in the case where the bonding wire 108 includes copper, aluminum, or an alloy thereof, the lead guide 204 can be formed of a metal having a higher material hardness than the metal forming the bonding wire 108. According to an embodiment, the lead guide 204 includes any one or more of the following: Cu, Ni, Ti, Zn, Fe, and alloys thereof, wherein these metals or alloys are selected to be harder than the bonding wire 108. In a specific example, the lead guide includes K88 copper, which is a metal alloy of copper that is harder than typical copper used for bonding wires. The lead guide 204 may alternatively be formed of or include other materials having a higher material hardness than the bonding wire 108, such as diamond, sapphire, etc. In addition, the lead guide 204 is formed with high rigidity. Stiffness is the tendency of the wire guide 204 to return to its original position after being subjected to high forces. In this case, the wire guide 204 can have a sufficiently high stiffness to perform the wire bonding process disclosed herein with the bonding wire 108, for example, a copper bonding wire having a diameter of at least 500 μm, and return to its original position with negligible bending or warping. This high stiffness is achieved by a combination of using a high material hardness material as disclosed above, and appropriate sizing and construction of the bonding wedge 202.

[0015] refer to Figure 1 and Figure 2The wire bonder 200 forms the wire bond ring 102 in the following manner. Initially, the bonding wire 108 is bonded to the first bonding surface 104 using the bonding wedge 202. The process may involve applying pressure to the bonding wire 108 in a vertical direction orthogonal to the first bonding surface 104 through the tip 206 of the bonding wedge 202. Optionally, ultrasonic energy may be applied to the bonding wire 108 and / or the first bonding surface 104 while applying pressure, thereby deforming the bonding wire 108 and creating a permanent material-material bond between the bonding wire 108 and the first bonding surface 104. Additionally or alternatively, heat may be applied to the bonding wire 108 and / or the first bonding surface 104, thereby softening the bonding wire 108 and / or the metal that previously formed the first bonding surface 104. The heat may be applied before, during, or after the pressure is applied by the bonding wedge 202. After forming a bond between the bonding wire 108 and the first bonding surface 104, the bonding wedge 202 is moved in a ring pattern, whereby the bonding wire 108 passes through the wire guide 204. The ring pattern is formed between the first bonding surface 104 and the second bonding surface 106 in an open shape (e.g., as shown in FIG. Figure 4 ) moves the bonding wedge 202. After moving the bonding wire 108 in a ring pattern, the bonding wire 108 is bonded to the second bonding surface 106 using the bonding wedge 202, for example, in the same manner as the process used to bond the bonding wire 108 to the first bonding surface 104.

[0016] refer to Figures 3A-3D , shows a method of forming a bond wire connection 100 at a selected point in a ring pattern. Figure 3A As shown, the ring pattern includes a first movement 300 immediately after bonding the bonding wire 108 to the first bonding surface 104. The first movement 300 moves the bonding wedge 202 vertically away from the first bonding surface 104. According to an embodiment, the first movement 300 moves the bonding wedge 202 in a vertical direction VD1 orthogonal to the first bonding surface 104. Alternatively, the first movement 300 may also include a lateral movement, for example, the first movement 300 may move the bonding wedge 202 vertically away from the first bonding surface 104 while also moving the bonding wedge 202 toward the second bonding surface 106 in the lateral direction LD1.

[0017] like Figure 3BAs shown, the ring pattern includes a second movement 302 performed after the first movement 300. The second movement 302 is a back-movement, whereby the engagement wedge 202 moves away from the second engagement surface 106. That is, the engagement wedge 202 moves in a direction opposite to the lateral direction LD1 in which it needs to move in order to reach the second engagement surface 106. According to an embodiment, the back-movement moves the engagement wedge 202 only in a lateral direction substantially parallel to the first engagement surface 104, that is, substantially orthogonal to the vertical direction VD1 and opposite to the lateral direction LD1 shown in the figure. In this context, the term "substantially parallel" refers to a movement that is nominally parallel and / or within + / - 5 degrees of parallel. Alternatively, the back-movement may include a vertical movement component, that is, the back-movement may be intentionally inclined at a certain angle so that when the engagement wedge 202 moves laterally away from the second engagement surface 106, the engagement wedge 202 moves vertically toward or away from the first engagement surface 104 in the vertical direction VD1.

[0018] like Figure 3C As shown, the ring pattern includes a third movement 304 performed after the second movement 302. The third movement 304 moves the engagement wedge 202 away from the first engagement surface 104. According to an embodiment, the third movement 304 moves the engagement wedge 202 in a vertical direction VD1 orthogonal to the first engagement surface 104. Alternatively, the third movement 304 may also include a lateral movement, for example, the third movement 304 may move the engagement wedge 202 vertically away from the first engagement surface 104 while also moving the engagement wedge 202 toward the second engagement surface 106 in the lateral direction LD1.

[0019] like Figure 3D As shown, the ring pattern includes a further movement 305 of the engagement wedge 202 laterally moving toward the second engagement surface 106 immediately after the third movement 304. The further movement may include moving the engagement wedge 202 in a transverse direction LD1 substantially parallel to the first engagement surface 104. Alternatively, the further movement may also include a vertical movement, for example, the further movement may move the engagement wedge 202 vertically toward or away from the first engagement surface 104 while also moving the engagement wedge 202 toward the second engagement surface 106 in the transverse direction LD1.

[0020] refer to Figure 4, shows an exemplary loop pattern 400 that can be programmed into a wire bonding machine according to an embodiment. The loop pattern 400 corresponds to a programmed path followed by the bonding wedge 202 between bonding the bonding wire 108 to the first bonding surface 104 and bonding the bonding wire 108 to the second bonding surface 106. The loop pattern 400 includes a first movement 300 performed immediately after bonding the bonding wire 108 to the first bonding surface 104, a second movement 302 performed immediately after the first movement 300, a third movement 304 performed immediately after the second movement 302, a fourth movement 306 performed immediately after the third movement 304, a fifth movement 308 performed immediately after the fourth movement 306, and a sixth movement 310 performed immediately after the fifth movement 308 and immediately before bonding the bonding wire 108 to the second bonding surface 106. The first movement 300, the second movement 302, and the third movement 304 are performed as described above. In this case, the first movement 300 and the third movement 304 each move the wire bonder 200 only in the vertical direction VD1 orthogonal to the first surface, and the second movement 302 is a backward movement that moves the wire bonder 200 only in the direction parallel to the first bonding surface 104 and opposite to the lateral direction LD1. The fourth movement 306 moves the wire bonder 200 in an inclined direction that moves vertically away from the first bonding surface 104 and laterally in the lateral direction LD1 toward the second bonding surface 106. The fifth movement 308 moves the wire bonder 200 in an inclined direction that moves vertically toward the first bonding surface 104 and laterally in the lateral direction LD1 toward the second bonding surface 106. Therefore, the fourth movement 306 and the fifth movement 308 form an arch pattern with the apex located between the first bonding surface 104 and the second bonding surface 106. The sixth movement 310 moves the bonding wedge 202 vertically toward the second surface, thereby bringing the bonding wedge 202 vertically to a position where the bonding wedge 202 can effectuate a bond between the bonding wire 108 and the second bonding surface 106 .

[0021] Reference again Figure 1, the wire bonding loop 102 is characterized by two-dimensional parameters, namely, a height H1 of the wire bonding loop 102 and a length L1 of the wire bonding loop 102. The height H1 of the wire bonding loop 102 refers to the maximum displacement between the vertex of the wire bonding loop 102 and the farthest bonding surface of the first bonding surface 104 and the second bonding surface 106. The length L1 of the wire bonding loop 102 refers to the distance between the contact point of the wire bonding loop 102 and the first bonding surface 104 and the contact point of the wire bonding loop 102 and the second bonding surface 106. The length L1 of the wire bonding loop 102 includes the portion of the bonding wire 108 that contacts the metal surface. In the case where a plurality of wire bonding loops 102 are formed continuously, the length L1 of the wire bonding loop 102 may be measured at the midpoint of the contact portion of the bonding wire 108.

[0022] The ratio between the height H1 of the wire bonding ring 102 and the length L1 of the wire bonding ring 102 is an important parameter that affects the cost and performance of the bonding wire connection 100. By reducing the height H1 of the wire bonding ring 102 at a given length L1, the resistance of the connection can be reduced, and the material cost for forming the bonding wire connection 100 can be reduced. When synthesized on a device with tens, hundreds or even thousands of these wire bonding rings 102, the benefits of this height reduction may be significant. Current wire bonding technology is limited in its ability to reduce the height H1 of the wire bonding ring 102. In addition, there is an inverse relationship between the length L1 of the wire bonding ring 102 and the minimum achievable height H1 of the wire bonding ring 102. That is, a shorter wire bonding ring 102 may require a higher wire bonding ring 102 height H1 to ensure that the bonding wire 108 deviates from the bonding plane and does not cause an electrical short circuit. Using a copper bonding wire 108 having a diameter of 400 μm as an example, the minimum achievable height H1 of the wire bond that can achieve stable loop formation by conventional wire bonding technology is 2000 μm for a wire bonding length L1 of 5500 μm, 2200 μm for a wire bonding length L1 of 5000 μm, 2400 μm for a wire bonding length L1 of 4500 μm, 2800 μm for a wire bonding length L1 of 4000 μm, 3000 μm for a wire bonding length L1 of 3500 μm, and 3500 μm for a wire bonding length L1 of 3000 μm. In this context, conventional wire bonding technology refers to a technology in which the bonding wedge 202 does not move in a back-off movement and / or does not use a wire guide 204 having high stiffness formed of a material having a higher material hardness than the bonding wire.

[0023] The combination of moving the bonding wedge 202 in a loop pattern including a back-movement and using a wire guide having high stiffness formed of a material having a higher material hardness than the bonding wire 108 allows for forming a wire bonding loop 102 having a significantly lower ratio between the height H1 of the wire bonding loop 102 and the length L1 of the wire bonding loop 102 than conventional wire bonding techniques. Table 1 below provides exemplary values ​​of the height H1 of the wire bonding loop 102 and the length L1 of the wire bonding loop 102 that can be obtained in a copper bonding wire 108 having a diameter of 400 μm according to the presently disclosed techniques.

[0024] Table 1

[0025]

[0026]

[0027] The values ​​provided above illustrate a beneficial ratio between the height H1 of the wire bond loop 102 and the length L1 of the wire bond loop 102 that can be obtained with the presently disclosed techniques. Equivalent beneficial improvements in this ratio can be obtained with different types of bond wires 108 (e.g., bond wires 108 having different thicknesses, hardnesses, material compositions, etc., and not necessarily with the same absolute values ​​as provided above).

[0028] Referring again to FIG. 3 , a beneficial improvement in the ratio between the height H1 of the wire bond loop 102 and the length L1 of the wire bond loop 102 may result from manipulation of the bond wire 108 that occurs during movement of the bonding wedge 202 in the ring pattern 400 . Figure 3C-3D, the back-moving movement of the bonding wedge 202 creates a kink 110 in the bonding wire 108, i.e., a sharp bend of the bonding wire 108 away from the second bonding surface 106. The kink 110 remains in the bonding wire 108 as the wire bonder 200 continues to form the wire bond loop 102 by moving toward the second bonding surface 106. The kink 110 facilitates reliable formation of a low-profile wire bond loop 102 by slowly instilling the necessary vertical gap between the bonding wire 108 and the first bonding surface 104 into the wire bond loop 102 and providing a weaker point that allows for better manipulation of the wire bond loop 102. Thus, subsequent movement of the bonding wedge 202 toward the second bonding surface 106 does not result in a departure angle that is too shallow. The kink 110 is created by a combination of moving the bonding wedge 202 in the back-moving movement and using a wire guide 204 having a high stiffness formed of a material having a higher material hardness than the bonding wire 108. This allows the wire guide 204 to slowly input the kink 110 into a permanent shape without damaging or excessively wearing the wire guide 204. In comparison, a bonding wedge 202 having a relatively soft material (e.g., plastic) for the wire guide 204 may not be able to effectively create a kink and / or may be damaged due to abrupt back movement when used in combination with a stiffer bonding wire 108.

[0029] refer to Figure 4 The described ring pattern 400 is used in combination with a 400 μm thick copper bonding wire 108, where the bonding ring length L1 is in the range of 2000 μm to 15000 μm. The second movement 302 (i.e., the back-movement) of the ring pattern 400 moves the bonding wedge 202 up to 600 μm. The ring pattern 400 can represent a pattern that is at least close to the optimization for this particular wire type. The optimal geometry and the degree of back-movement can be different in the case of different bonding wires 108s. In general, a beneficial effect on the length L1 to width ratio of the wire bonding ring 102 can be achieved by any ring pattern 400 that includes a back-movement and utilizes a wire guide 204 with high stiffness, which is formed of a material having a higher material hardness than the bonding wire 108.

[0030] Although the present disclosure is not limited in this regard, the following numbered examples illustrate one or more aspects of the present disclosure.

[0031] Example 1. A method for forming a bonding wire connection, the method comprising: providing a wire bonder including a bonding wedge having a wire guide; and forming a wire bond ring by first bonding a bonding wire to a first bonding surface using the bonding wedge, then moving the wire bonder in a ring pattern whereby the bonding wire passes through the wire guide, and then bonding the bonding wire to a second bonding surface using the bonding wedge, wherein moving the wire bonder in the ring pattern includes a back-off movement whereby the wire bonder moves away from the second bonding surface, and wherein the wire guide is formed of a material having a higher material hardness than the bonding wire.

[0032] Example 2. A method according to Example 1, wherein the ring pattern includes a first movement immediately after bonding the bonding wire to the first bonding surface and a second movement immediately after the first movement, wherein the first movement causes the bonding wedge to move vertically away from the first bonding surface, and wherein the second movement is the reverse movement.

[0033] Example 3. The method of example 2, wherein the backing movement moves the wire bonder in a lateral direction substantially parallel to the first bonding surface.

[0034] Example 4. The method of Example 2, wherein the ring pattern includes a third movement immediately following the second movement, and wherein the third movement moves the wire bonder vertically away from the first bonding surface.

[0035] Example 5. The method of example 4, wherein the ring pattern moves the wire bonder laterally toward the second bonding surface immediately after the third movement.

[0036] Example 6. A method according to Example 5, wherein the ring pattern includes a fourth movement immediately following the third movement and a fifth movement immediately following the fourth movement, wherein the fourth movement causes the wire bonder to move in an inclined direction that moves vertically away from the first bonding surface and laterally toward the second bonding surface, and wherein the fifth movement causes the wire bonder to move in an inclined direction that moves vertically toward the first bonding surface and laterally toward the second bonding surface.

[0037] Example 7. The method of Example 1, wherein the bonding wire is a copper or copper alloy wire, and wherein the wire guide is formed of a metal having a higher material hardness than the copper or copper alloy wire.

[0038] Example 8. The method of Example 7, wherein the lead guide comprises any one or more of the following: Cu, Ni, Ti, Zn, Fe, and alloys thereof.

[0039] Example 9. The method of Example 1, wherein the bonding wire is a copper or copper alloy wire having a diameter between 300 μm and 500 μm.

[0040] Example 10. The method of Example 9, wherein the bonding wire has a diameter of 400 μm.

[0041] Example 11. The method of Example 10, wherein a bond loop length of the wire bond loop is ≤ 5500 μm, and wherein a bond loop height of the wire bond loop is ≤ 1800 μm.

[0042] Example 12. The method of Example 11, wherein the wire bond ring has a bond ring length of ≤ 4000 μm.

[0043] Example 13. The method of Example 11, wherein the wire bond ring has a bond ring height of ≤ 1400 μm.

[0044] Example 14. A semiconductor device, comprising: a bonding lead connection portion forming an electrical connection portion of the semiconductor device, wherein the bonding lead connection portion includes a wire bonding ring between a first bonding surface and a second bonding surface, wherein the bonding lead is a copper or copper alloy wire with a diameter between 300μm and 500μm, and wherein a bonding ring height of the wire bonding ring is between 1200μm and 2200.

[0045] Example 15. The semiconductor device of Example 14, wherein the bonding ring height is less than or equal to 2000 μm.

[0046] Example 16. The semiconductor device of Example 15, wherein the bonding ring height is less than or equal to 1400 μm.

[0047] Example 17. The semiconductor device of Example 14, wherein the wire bond ring has a bond ring length between 3500 μm and 6000 μm.

[0048] Example 18. The semiconductor device of Example 17, wherein the bonding ring length is less than 5000 μm.

[0049] Example 19. The semiconductor device of Example 18, wherein the bonding ring length is less than 4000 μm.

[0050] Example 20. The semiconductor device of Example 14, wherein the bonding wire is a copper wire, and wherein the diameter is 400 μm.

[0051] For ease of description, spatially relative terms such as "below," "below," "lower," "above," "upper," "main," "rear," etc. are used to explain the positioning of one element relative to a second element. These terms are intended to cover different orientations of the device in addition to orientations that are different from those depicted in the figures. In addition, terms such as "first," "second," etc. are also used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout the specification, similar terms refer to similar elements.

[0052] As used herein, the terms "having", "containing", "including", "comprising", etc. are open terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly indicates otherwise, the articles "a", "an", and "the" are intended to include the plural as well as the singular.

[0053] It should be understood that the features of the various embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0054] Although specific embodiments have been shown and described herein, it will be appreciated by those of ordinary skill in the art that various alternatives and / or equivalent embodiments may replace the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any modifications or variations of the specific embodiments discussed herein. Therefore, the present invention is intended to be limited only by the claims and their equivalents.

Claims

1. A method for forming a bonding wire connection, the method comprising: providing a wire bonder including a bonding wedge having a wire guide; as well as forming a wire bonding loop by first bonding a bonding wire to a first bonding surface using the bonding wedge, then moving the bonding wedge in a loop pattern whereby the bonding wire passes through the wire guide, and then bonding the bonding wire to a second bonding surface using the bonding wedge, wherein moving the engagement wedge in the ring pattern comprises a back-movement whereby the engagement wedge moves away from the second engagement surface, and The wire guide is formed of a material having a higher material hardness than the bonding wire.

2. The method according to claim 1, wherein: The ring pattern includes a first movement immediately after bonding the bonding wire to the first bonding surface and a second movement immediately after the first movement, wherein the first movement moves the bonding wedge vertically away from the first bonding surface, and wherein the second movement is the back-off movement.

3. The method according to claim 2, wherein: The backing movement moves the wire bonder in a lateral direction substantially parallel to the first bonding surface.

4. The method according to claim 2, wherein: The ring pattern includes a third movement immediately following the second movement, and wherein the third movement moves the wire bonder vertically away from the first bonding surface.

5. The method according to claim 4, wherein: The ring pattern moves the engagement wedge laterally toward the second engagement surface immediately following the third movement.

6. The method according to claim 5, wherein: The ring pattern includes a fourth movement immediately following the third movement and a fifth movement immediately following the fourth movement, wherein the fourth movement moves the engagement wedge in an inclined direction that moves vertically away from the first engagement surface and laterally toward the second engagement surface, and wherein the fifth movement moves the engagement wedge in an inclined direction that moves vertically toward the first engagement surface and laterally toward the second engagement surface.

7. The method according to claim 1, wherein: The bonding wire is a copper or copper alloy wire, and wherein the lead guide is formed of a metal having a higher material hardness than the copper or copper alloy wire.

8. The method according to claim 7, wherein: The lead guide includes any one or more of the following: Cu, Ni, Ti, Zn, Fe and alloys thereof.

9. The method according to claim 1, wherein: The bonding wire is a copper or copper alloy wire with a diameter between 300 μm and 500 μm.

10. The method according to claim 9, wherein: The bonding wire has a diameter of 400 μm.

11. The method according to claim 10, wherein: The wire bonding ring has a bonding ring length of ≤5500 μm, and wherein the wire bonding ring has a bonding ring height of ≤1800 μm.

12. The method according to claim 11, wherein: The wire bonding ring has a bonding ring length of ≤4000 μm.

13. The method according to claim 11, wherein: The wire bonding ring has a bonding ring height of ≤1400 μm.

14. A semiconductor device comprising: bonding wire connections that form electrical connections of the semiconductor device, wherein the bonding wire connection portion comprises a wire bonding ring between the first bonding surface and the second bonding surface, wherein the bonding wire loop is formed by a bonding wire including copper having a diameter between 300 μm and 500 μm, and Wherein, the bonding ring height of the wire bonding ring is between 1200 μm and 2200 μm.

15. The semiconductor device according to claim 14, wherein: The height of the joining ring is less than or equal to 2000 μm.

16. The semiconductor device according to claim 15, wherein: The height of the joining ring is less than or equal to 1400 μm.

17. The semiconductor device according to claim 14, wherein: The wire bonding ring has a bonding ring length between 3500 μm and 6000 μm.

18. The semiconductor device according to claim 17, wherein: The length of the engagement ring is less than 5000 μm.

19. The semiconductor device according to claim 18, wherein: The length of the engagement ring is less than 4000 μm.

20. The semiconductor device according to claim 14, wherein The bonding wire is a copper wire, and wherein the diameter is 400 μm.

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