Display panel, manufacturing method thereof and display device

Abstract

The invention discloses a display panel and a manufacturing method thereof and a display device.The display panel comprises a substrate, a pixel definition layer, a light-emitting unit and a partition structure, the light-emitting unit comprises an anode, a light-emitting functional layer and a cathode, the anode is arranged on the substrate, the light-emitting functional layer is arranged on the anode, and the partition structure is arranged on the pixel definition layer. The cathode is arranged on the light-emitting functional layer; the light-emitting unit further comprises an anode auxiliary electrode, the anode auxiliary electrode is arranged between the anode and the light-emitting functional layer, and the anode auxiliary electrode is formed by one or more of metal or metal alloy or metal oxide; and the partition structure is used for partitioning the anode auxiliary electrodes of the two adjacent light-emitting units when the anode auxiliary electrodes are deposited on the whole surface. By adding the anode auxiliary electrode between the anode and the light-emitting functional layer, a film layer interface between the anode and the light-emitting functional layer is improved, the light-emitting efficiency of the light-emitting unit is improved, and the service life of the light-emitting unit is prolonged.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] OLED (Organic Light Emitting Diode) display devices are widely used in various fields due to their light weight, wide viewing angle, fast response, low temperature resistance, high luminous efficiency, and the ability to produce curved flexible displays. As mass production technology becomes increasingly mature, OLED display panels are gradually becoming mainstream real-world panels.

[0003] However, due to process reasons, when etching the anode of the OLED light-emitting unit, the protective layer may not be removed cleanly, resulting in residues. The above problem will increase the contact resistance between the anode and the organic material in the light-emitting functional layer, thereby causing the light-emitting unit to drive higher voltage or rapidly reduce its lifespan. Summary of the invention

[0004] The purpose of the present application is to provide a display panel, a manufacturing method thereof and a display device, which improves the film interface between the anode and the light-emitting functional layer by adding an anode auxiliary electrode between the anode and the light-emitting functional layer, thereby improving the luminous efficiency and life of the light-emitting unit.

[0005] The present application discloses a display panel, which includes a base substrate, a pixel definition layer, a light-emitting unit and a partition structure, wherein the pixel definition layer is arranged on the base substrate and is provided with a plurality of opening areas, and the light-emitting unit is arranged on the base substrate and is located in the opening area; the light-emitting unit includes an anode, a light-emitting functional layer and a cathode, wherein the anode is arranged on the base substrate, the light-emitting functional layer is arranged on the anode, and the cathode is arranged on the light-emitting functional layer; the light-emitting unit also includes an anode auxiliary electrode, wherein the anode auxiliary electrode is arranged between the anode and the light-emitting functional layer, and the anode auxiliary electrode is formed of one or more of metal, metal alloy or metal oxide; the partition structure is used to partition the anode auxiliary electrodes of two adjacent light-emitting units when the anode auxiliary electrode is deposited on the entire surface.

[0006] Optionally, the anode includes a first transparent electrode layer, a first reflective electrode layer and a second transparent electrode layer, the first reflective electrode layer is arranged between the first transparent electrode layer and the second transparent electrode layer; the first reflective electrode layer is formed of a reflective metal material; wherein the anode auxiliary electrode includes a first auxiliary electrode layer, the first auxiliary electrode layer is arranged on the second transparent electrode layer and is in direct contact with the second transparent electrode layer; wherein the thickness of the first auxiliary electrode layer is between 10 angstroms and 300 angstroms.

[0007] Optionally, the anode includes a first electrode, which is formed of one or more of metal, metal alloy or metal oxide; the anode auxiliary electrode includes a second reflective electrode layer, which is formed of silver material or silver alloy material, and the second reflective electrode layer is arranged on the anode and directly contacts the anode; the thickness of the second reflective electrode layer is between 1000 angstroms and 5000 angstroms.

[0008] Optionally, the anode auxiliary electrode also includes a second auxiliary electrode layer; the second auxiliary electrode layer is formed of metal oxide; the second auxiliary electrode layer is arranged on the second reflective electrode layer and is in direct contact with the second reflective electrode layer; wherein, the second auxiliary electrode layer is plasma treated to form a metal oxide film layer on the surface of the second reflective electrode layer away from the substrate to serve as the second auxiliary electrode layer.

[0009] Optionally, the display panel also includes a partition layer, which is arranged under the pixel definition layer and located on the anode, directly contacting the anode; under the orthographic projection of the base substrate, the boundary of the partition layer is within the projection range of the pixel definition layer and has a preset distance from the projection boundary of the pixel definition layer, and the pixel definition layer and the partition layer form a partition structure; the partition structure is used to isolate the anode auxiliary electrodes of two adjacent light-emitting units when the anode auxiliary electrode is deposited on the entire surface.

[0010] Optionally, the isolation layer is formed of metal or metal alloy material, and the isolation layer and the anode are formed of different materials; the preset distance is greater than or equal to 5000 angstroms and less than or equal to 50000 angstroms, and the thickness of the isolation layer is greater than or equal to 100 angstroms to 10000 angstroms.

[0011] The present application also discloses a method for manufacturing a display panel, comprising the steps of: Providing a substrate; Depositing and patterning an anode on a substrate; Depositing and patterning to form a pixel definition layer, and forming a plurality of opening areas; forming a partition structure; Depositing anode auxiliary electrode materials on the entire surface in sequence, and forming an anode auxiliary electrode in the opening area using the partition structure; forming a light-emitting functional layer and a cathode to form a plurality of light-emitting units in the plurality of opening areas; A display panel is formed.

[0012] Optionally, the step of depositing and patterning an anode on a substrate includes: Depositing an entire anode material layer and an entire barrier layer material layer in sequence on the substrate; Sequentially etching the partition layer material layer and the anode material layer at the non-opening area to form a patterned partition layer and an anode, and forming a partition groove at the etching position; The step of depositing and patterning a pixel definition layer and forming a plurality of opening areas comprises: Depositing a whole surface of pixel definition layer material on the partition layer and filling the partition grooves; Patterning a pixel definition layer and forming a plurality of opening areas, wherein a radial width of the pixel definition layer is greater than a width of the partition groove; The step of forming the partition structure includes: Using the pixel definition layer as a protective layer, etching the partition layer, so that the pixel definition layer and the partition layer form a partition structure; Wherein, under the orthographic projection of the base substrate, the boundary of the isolation layer is within the projection range of the pixel definition layer and has a preset distance from the projection boundary of the pixel definition layer.

[0013] Optionally, the anode is formed of one or more of metal, metal alloy or metal oxide; the anode auxiliary electrode includes a second reflective electrode layer and a second auxiliary electrode layer, the second reflective electrode layer is formed of silver material or silver alloy material, the second reflective electrode layer is arranged on the anode and directly contacts the anode; the second auxiliary electrode layer is formed of metal oxide; the second auxiliary electrode layer is arranged on the second reflective electrode layer and directly contacts the second reflective electrode layer; The second auxiliary electrode layer is plasma treated to form a metal oxide film layer on the surface of the second reflective electrode layer away from the substrate to serve as the second auxiliary electrode layer; the thickness of the second reflective electrode layer is between 1000 angstroms and 5000 angstroms.

[0014] The present application also discloses a display device, comprising a driving circuit and the above-mentioned display panel, wherein the driving circuit is used to drive the display panel to display.

[0015] The present application adds an anode auxiliary electrode to the anode and the light-emitting functional layer. During the deposition process, the anode auxiliary electrode has a good contact interface with the anode. Even if there is a problem of residue on the anode, the anode auxiliary electrode also has conductive properties and is in full contact with the anode, so there will be no problem of increased contact resistance. The advantage of the anode auxiliary electrode is that the anode auxiliary electrode can be isolated by a partition structure, so that the anode auxiliary electrode of each light-emitting unit is independently set without the need for etching, thereby avoiding a series of problems such as etching residue and etching oxidation caused by etching to the anode auxiliary electrode. It is important that the process is carried out in the same environment as the subsequent light-emitting functional layer. After the anode auxiliary electrode is formed, the etching process is not required, and the light-emitting functional layer is directly deposited, avoiding the influence of the intermediate process on the film interface between the anode auxiliary electrode and the light-emitting functional layer. Moreover, in the same environment, such as a vacuum environment, the anode auxiliary electrode and the light-emitting functional layer are formed in sequence, so that the contact interface between the materials of the anode auxiliary electrode and the light-emitting functional layer is formed, thereby improving the luminous efficiency and service life of the light-emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings: Figure 1 is a schematic diagram of a display panel according to a first embodiment of the present application; Figure 2 is a schematic diagram of a partition structure of a first embodiment of the present application; Figure 3 is a schematic diagram of an anode of the first embodiment of the present application; Figure 4 is a schematic diagram of a light emitting unit according to a first embodiment of the present application; Figure 5 is a schematic diagram of steps of a method for manufacturing a display panel according to a first embodiment of the present application; Figure 6 is a schematic diagram of the steps of another method for manufacturing a display panel according to the first embodiment of the present application; Figure 7 is a schematic diagram of the process of manufacturing a display panel according to the first embodiment of the present application; Figure 8 is a schematic diagram of a display panel according to a second embodiment of the present application; Fig. 9 is a schematic diagram of a display device of the present application.

[0017] Among them, 100, display panel; 101, opening area; 102, non-opening area; 110, substrate; 120, pixel definition layer; 121, partition groove; 130, light-emitting unit; 131, anode; 1311, first transparent electrode layer; 1312, first reflective electrode layer; 1313, second transparent electrode layer; 1314, first electrode; 132, light-emitting functional layer; 1321, hole injection layer; 1322, hole transport layer; 1323, hole injection layer; 1324, hole transport layer; 1325, hole injection layer; 1326, hole injection layer; 1327, hole injection layer; 1328, hole injection layer; 1329, hole injection layer; 1330, light-emitting unit; 1331, anode; 1332, first transparent electrode layer; 1333, second transparent 323, electron blocking layer; 1324, light-emitting layer; 1325, hole blocking layer; 1326, electron transport layer; 1327, electron injection layer; 133, cathode; 134, anode auxiliary electrode; 1341, first auxiliary electrode layer; 1342, second reflective electrode layer; 1343, second auxiliary electrode layer; 140, partition layer; 141, partition structure; 150, pixel driving layer; 200, display device; 210, driving circuit. DETAILED DESCRIPTION

[0018] It should be understood that the terms used herein, the specific structures and functional details disclosed are only for describing specific embodiments and are representative, but the present application can be implemented in many alternative forms and should not be construed as being limited to only the embodiments described herein.

[0019] In the description of the present application, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating relative importance or implicitly indicating the number of technical features indicated. Therefore, unless otherwise specified, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features; "multiple" means two or more. In addition, the terms "upper", "lower", "left", "right", "vertical", "horizontal", etc. indicating orientation or positional relationships are described based on the orientation or relative positional relationships shown in the accompanying drawings, and are only for the convenience of describing the simplified description of the present application, rather than indicating that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.

[0020] The present application is described in detail below with reference to the accompanying drawings and optional embodiments.

[0021] Figure 1 is a schematic diagram of a display panel of the first embodiment of the present application, see Figure 1As shown, the present application discloses a display panel, the display panel 100 includes a base substrate 110, a pixel definition layer 120, a light-emitting unit 130 and a partition structure 141, the pixel definition layer 120 is arranged on the base substrate 110, and is provided with a plurality of opening areas 101, the light-emitting unit 130 is arranged on the base substrate 110, and is located in the opening area 101; the light-emitting unit 130 includes an anode 131, a light-emitting functional layer 132 and a cathode 133, the anode 131 is arranged on the base substrate 110, the light-emitting functional layer 132 and the cathode 133 The light-emitting functional layer 132 is arranged on the anode 131, and the cathode 133 is arranged on the light-emitting functional layer 132; the light-emitting unit 130 also includes an anode auxiliary electrode 134, and the anode auxiliary electrode 134 is arranged between the anode 131 and the light-emitting functional layer 132, and the anode auxiliary electrode 134 is formed of one or more of metals, metal alloys or metal oxides; the partition structure 141 is used to isolate the anode auxiliary electrodes 134 of two adjacent light-emitting units 130 when the anode auxiliary electrode 134 is deposited on the entire surface.

[0022] The present application adds an anode auxiliary electrode 134 to the anode 131 and the light-emitting functional layer 132. During the deposition process, the anode auxiliary electrode 134 has a good contact interface with the anode 131. Even if the anode 131 has a residual problem, since the anode auxiliary electrode 134 also has conductive properties and is in full contact with the anode 131, there will be no problem of increased contact resistance. The advantage of the anode auxiliary electrode 134 is that the anode auxiliary electrode 134 can be isolated by the partition structure 141, so that the anode auxiliary electrode 134 of each light-emitting unit 130 is independently set without the need for etching, thereby avoiding a series of problems such as etching residues and etching oxidation caused by etching to the anode auxiliary electrode 134. It is important that the process is carried out in the same environment as the subsequent light-emitting functional layer 132. After the anode auxiliary electrode 134 is formed, no etching process is required, and the light-emitting functional layer 132 is directly deposited, thereby avoiding the influence of the intermediate process on the film interface between the anode auxiliary electrode 134 and the light-emitting functional layer 132. Moreover, in the same environment, such as a vacuum environment, the anode auxiliary electrode 134 and the light-emitting functional layer 132 are sequentially formed to form a contact interface between the materials of the anode auxiliary electrode 134 and the light-emitting functional layer 132, thereby improving the light-emitting efficiency and service life of the light-emitting unit 130.

[0023] Among them, it is worth mentioning that in the process of the light-emitting unit 130 of the display panel 100, the anode 131 is generally formed first, and the pixel definition layer 120 is formed on the anode 131. After the pixel definition layer 120 is patterned, the required pixel area, that is, the opening area 101 is isolated. The opening area 101 is used to form the subsequent light-emitting functional layer 132 and the cathode 133. After the anode 131 is deposited, it needs to undergo a patterning process and a subsequent patterning process of the pixel definition layer 120 before the light-emitting functional layer 132 is formed. The patterning process generally adopts a photolithography method. After the part of the anode 131 that is not etched is protected by a photoresist, the unnecessary part of the anode 131 material is etched, and the photoresist on the anode 131 is removed after the etching is completed. In this process, on the one hand, there will be a situation where the above-mentioned photoresist is not removed cleanly, resulting in residual photoresist on the anode 131, which causes abnormalities. On the other hand, since the etching process is generally completed in an atmospheric environment, the surface of the anode 131 is prone to oxidation during the etching process, especially during the oxidation process, if the surface of the anode 131 is uneven and has peaks or pinholes, it is more likely to oxidize, thereby increasing the contact resistance between the anode 131 and the light-emitting functional layer 132. Generally speaking, in order to solve the above problem, an additional plasma treatment can be added before the light-emitting functional layer 132 is evaporated to clean the surface of the anode 131. However, it is difficult to control the process conditions of the plasma treatment. Too much plasma treatment can easily damage the anode 131, and too little plasma treatment can easily lead to the problem of incomplete cleaning, thereby failing to achieve the effect of cleaning the surface of the anode 131. However, in the technical solution of the present application, an anode auxiliary electrode 134 is provided between the anode 131 and the light-emitting functional layer 132, and the above problem is solved by the anode auxiliary electrode 134, thereby improving the display effect and service life of the display panel 100.

[0024] Figure 2 is a schematic diagram of the partition structure of the first embodiment of the present application, see Figure 2 As shown, the display panel 100 also includes a partition layer 140, which is arranged under the pixel definition layer 120 and is located on the anode 131, and is in direct contact with the anode 131; under the orthographic projection of the base substrate 110, the boundary of the partition layer 140 is within the projection range of the pixel definition layer 120, and has a preset distance from the projection boundary of the pixel definition layer 120, and the pixel definition layer 120 and the partition layer 140 form a partition structure 141.

[0025] In this embodiment, a partition layer 140 is added between the pixel definition layer 120 and the anode 131, so that the partition layer 140 is at the bottom and has a width smaller than the pixel definition layer 120, and the edge of the pixel definition layer 120 protrudes from the partition layer 140, thereby forming a partition structure 141. The partition structure 141 is respectively arranged around each opening area 101, and when the anode auxiliary electrode 134 is evaporated, the redundant anode auxiliary electrode 134 material on the pixel definition layer 120 is disconnected from the anode 131, so that the anode auxiliary electrode 134 is independently arranged.

[0026] In the process of forming the partition structure 141, the material of the partition layer 140 can be a metal material or a metal alloy material, but it is different from the material used for the anode 131. The main consideration is that in the process of etching the partition layer 140 to form the pixel definition layer 120, a wet etching process is generally required. Since the wet etching process is isotropic, the partition layer 140 will be side-etched, so that the edge of the pixel definition layer 120 protrudes from the partition layer 140, thereby forming the partition structure 141. In the process of etching, if the anode 131 and the partition layer 140 are made of the same material, the corresponding anode 131 will also be etched, causing the anode 131 to be etched and damaged. When the anode 131 and the partition layer 140 are made of different materials, since the etching solution only etches the corresponding material, that is, during the etching process, the etching solution only reacts with the material of the partition layer 140, and does not react with the material of the anode 131, therefore, the anode 131 will not be affected.

[0027] The isolation layer 140 used in the present application not only forms the isolation structure 141 , but also protects the anode 131 during the etching process.

[0028] Continuing from the above, in the process of forming the anode 131, it is necessary to form independently arranged anodes 131 in multiple opening areas 101. In this embodiment, the anode 131 and the isolation layer 140 arranged on the anode 131 are etched at the same time, and the isolation layer 140 is used to protect the anode 131. That is, in the process of etching the anode 131, it is not necessary to use a photoresist to directly contact the anode 131, but to be arranged on the isolation layer 140 to etch the isolation layer 140 and the anode 131 at the same time, so that the isolation groove 121 is formed in the non-opening area 102, so that multiple anodes 131 are independently arranged. It can be understood that the pixel definition layer 120 is used to insulate the location of the isolation groove 121, and the pixel definition layer 120 partially overlaps with the anode 131 and the isolation layer 140. The pixel definition layer 120 is set to define the opening area 101, that is, the area where the light-emitting unit 130 is set.

[0029] In this embodiment, the partition layer 140 is provided by covering the anode 131. In the process of etching the anode 131, the photoresist does not need to be provided on the anode 131, that is, the anode 131 is not in contact with the photoresist, thereby avoiding the residual problem caused by the unclean film stripping of the photoresist material on the anode 131. Moreover, the partition layer 140 is etched again in the subsequent process of forming the partition structure 141, thereby exposing the anode 131 from the opening area 101, so that the anode 131 can directly contact the subsequent anode auxiliary electrode 134 in the opening area 101. In the process of forming the partition structure 141 by providing the partition layer 140, the problem of residual photoresist in the etching process of the anode 131 is also improved. In addition, in the case of adding the partition layer 140 to form the partition structure 141, although the etching technology is used, the etching of the partition layer 140 and the etching of the partition structure 141 do not need to add additional masks, and can be directly completed using the current process machine, which is suitable for the production of the current production line.

[0030] Each light-emitting unit 130 in the display panel 100 can generally be controlled individually. The specific method is to connect the anode 131 of the light-emitting unit 130 to a thin film transistor respectively, and drive it through the pixel driving circuit. When the pixel driving circuit assigns different voltages to the anode 131, the light-emitting unit 130 is controlled to have different light brightness. The pixel driving circuit of the display panel 100 is formed by thin film technology, which can also be called a pixel driving layer 150, which is generally arranged on the base substrate 110 and under the anode 131. The pixel driving layer 150 is generally formed of multiple metal layers and insulating layers to form thin film transistors, driving circuits, etc., so as to realize the control of the light-emitting unit 130.

[0031] Furthermore, since the anode 131 of the light-emitting unit 130 needs to be connected to the corresponding thin film transistor, generally speaking, the two are connected through a via, and the extension line of the anode 131 is connected to the thin film transistor through the via. In this embodiment, the position of the via can be set corresponding to the position of the above-mentioned isolation layer 140. That is, on the orthographic projection of the base substrate 110, the projection of the via between the anode 131 of the current light-emitting unit 130 and the thin film transistor and the projection of the isolation layer 140 overlap. Through the conductive effect of the isolation layer 140, the resistance at the via is reduced.

[0032] Specifically, the anode 131 in this embodiment includes a first transparent electrode layer 1311, a first reflective electrode layer 1312 and a second transparent electrode layer 1313, wherein the first reflective electrode layer 1312 is disposed between the first transparent electrode layer 1311 and the second transparent electrode layer 1313; and the first reflective electrode layer 1312 is formed of a reflective metal material.

[0033] Figure 3 is a schematic diagram of the anode of the first embodiment of the present application, see Figure 3 As shown, for the current display panel 100 mainly using organic light-emitting materials, the anode 131 generally adopts a sandwich setting, that is, the first reflective electrode layer 1312 is sandwiched between the first transparent electrode layer 1311 and the second transparent electrode layer 1313, so as to protect the first reflective electrode layer 1312. On the other hand, since the first transparent electrode layer 1311 is generally formed by metal oxides such as indium tin oxide (ITO), the indium tin oxide has a higher work function, so that the light-emitting unit 130 generates more holes on the anode 131 side, thereby improving the light-emitting efficiency of the light-emitting unit 130. In this embodiment, the anode 131 adopts a three-layer electrode layer of ITO, silver Ag, and ITO. The corresponding material of the partition layer 140 can be a metal oxide such as IZO (indium zinc oxide), a metal such as Al (aluminum), Mo (molybdenum), Cu (copper), or an alloy of the above metals and other metals.

[0034] Specifically, the anode auxiliary electrode 134 includes a first auxiliary electrode layer 1341, which is disposed on the second transparent electrode layer 1313 and in direct contact with the second transparent electrode layer 1313. The first auxiliary electrode layer 1341 of this embodiment can be selected as a metal oxide material with a high work function such as ITO, IZO, etc., or can also be selected as a metal or metal alloy material with a high work function such as Pt, Ni, Au, etc. However, considering that the metal or metal alloy material has the characteristic of being opaque when the thickness is thick, it is necessary to limit the thickness of the metal or metal alloy material, that is, the thickness of the first auxiliary electrode layer 1341 should not exceed 30nm (300 angstroms). Of course, the thickness of the first auxiliary electrode layer 1341 cannot be too thin, and at least needs to be greater than or equal to 10 angstroms.

[0035] Figure 4 is a schematic diagram of a light emitting unit of the first embodiment of the present application, see Figure 4 As shown, the light-emitting functional layer 132 includes a multi-layer film structure including a hole injection layer 1321, a hole transport layer 1322, an electron blocking layer 1323, a light-emitting layer 1324, a hole blocking layer 1325, an electron transport layer 1326 and an electron injection layer 1327 from the anode 131 to the cathode 133. The electron injection layer 1327 is arranged on the cathode 133 side, and the hole injection layer 1321 is arranged on the anode 131 side.

[0036] Furthermore, considering that the partition structure 141 needs to at least partition the anode auxiliary electrode 134 and can also partition the light-emitting functional layer 132, it is necessary to limit the partition capacity of the partition structure 141. Since the partition capacity of the partition structure 141 is mainly related to the preset distance and the thickness of the partition layer 140, it is necessary to limit the preset distance and the thickness of the partition layer 140 in the partition structure 141. The preset distance w is greater than or equal to 5000 angstroms and less than or equal to 50000 angstroms, and the thickness h of the partition layer 140 is greater than or equal to 100 angstroms to 10000 angstroms. Of course, if the thickness of the partition layer 140 is considered in the partition structure 141 in this embodiment, the partition structure 141 can be used only to partition the anode auxiliary electrode 134, and the subsequent light-emitting functional layer 132 can be formed by metal mask evaporation technology. Of course, in the above another embodiment where the partition structure 141 is a suspension structure, the light-emitting functional layer 132 can also be formed by using a suspension structure through maskless evaporation technology.

[0037] Figure 5 is a schematic diagram of the steps of the method for manufacturing a display panel according to the first embodiment of the present application, see Figure 5 As shown, the present application also discloses a method for manufacturing a display panel corresponding to the above embodiment, comprising the steps of: S10: providing a substrate; S20: depositing and patterning an anode on a substrate; S30: depositing and patterning to form a pixel definition layer, and forming a plurality of opening areas; S40: forming a partition structure; S50: depositing an anode auxiliary electrode material and a light-emitting functional layer material on the entire surface in sequence, and forming an anode auxiliary electrode and a light-emitting functional layer in the opening area by using the partition structure; S60: forming a cathode to form a plurality of light-emitting units in the plurality of opening regions; S70: forming a display panel.

[0038] In this embodiment, the present application adds an anode auxiliary electrode 134 on the anode 131 and the light-emitting functional layer 132, and isolates the anode auxiliary electrode 134 through a partition structure 141, so that the anode auxiliary electrode 134 of each light-emitting unit 130 is independently set without etching, thereby avoiding a series of problems such as etching residue and etching oxidation caused by etching to the anode auxiliary electrode 134. It is important that the process is carried out in the same environment as the subsequent light-emitting functional layer 132. After the anode auxiliary electrode 134 is formed, the etching process is not required, and the light-emitting functional layer 132 is directly deposited, thereby avoiding the influence of the intermediate process on the film interface between the anode auxiliary electrode 134 and the light-emitting functional layer 132. Moreover, in the same environment, such as a vacuum environment, the anode auxiliary electrode 134 and the light-emitting functional layer 132 are formed in sequence, so that the contact interface between the materials of the anode auxiliary electrode 134 and the light-emitting functional layer 132 is formed, thereby improving the luminous efficiency and service life of the light-emitting unit 130.

[0039] Figure 6 is a schematic diagram of the steps of another method for manufacturing a display panel according to the first embodiment of the present application, Figure 7 is a schematic diagram of the process of manufacturing a display panel according to the first embodiment of the present application, see Figure 6 to Figure 7 As shown, the step S10 also includes forming other structures such as a pixel driving layer on the base substrate.

[0040] Specifically, the step S20 includes: S201: sequentially depositing a whole surface anode material layer and a whole surface barrier material layer on the substrate; S202: etching the partition layer material layer and the anode material layer in sequence at the non-opening area to form a patterned partition layer and an anode, and forming a partition groove at the etching position.

[0041] Among them, the anode 131 material includes the above-mentioned ITO, Ag, and ITO materials, and the first transparent electrode layer 1311, the first reflective electrode layer 1312, and the second transparent conductive layer are formed by the above three materials. It is necessary to deposit the first transparent electrode layer 1311, the first reflective electrode layer 1312, and the second transparent conductive layer in sequence, and then deposit the partition layer 140. In the etching process, the partition layer 140, the second transparent conductive layer, the first reflective electrode layer 1312, and the first transparent conductive layer are etched in this order.

[0042] The steps of S30 include: S301: depositing a whole surface of a pixel definition layer material on the partition layer and filling the partition grooves; S302: patterning a pixel definition layer and forming a plurality of opening areas, wherein a radial width of the pixel definition layer is greater than a width of the partition groove.

[0043] The steps of S40 include: S401: etching the partition layer using the pixel definition layer as a protection layer, so that the pixel definition layer and the partition layer form a partition structure.

[0044] Wherein, under the orthographic projection of the base substrate 110 , the boundary of the partition layer 140 is within the projection range of the pixel definition layer 120 and has a preset distance from the projection boundary of the pixel definition layer 120 .

[0045] In step S50 , the anode auxiliary electrode 134 is formed, and the first auxiliary electrode layer 1341 is formed by using the material of the first auxiliary electrode layer 1341 to serve as the anode auxiliary electrode 134 .

[0046] Of course, the step of forming the light-emitting functional layer 132 can also be formed by the currently more mature metal mask evaporation technology instead of using the partition structure 141 to form the light-emitting functional layer 132. It is worth mentioning that in the metal mask evaporation technology, etching is also not required, and the evaporation environment is a vacuum environment, which can be consistent with the environment of the anode auxiliary electrode 134 using the maskless evaporation technology, thereby achieving the above effect.

[0047] Generally speaking, the anode 131 is a sandwich arrangement of the first transparent electrode layer 1311, the first reflective electrode layer 1312 and the second transparent electrode layer 1313 in the above-mentioned first embodiment. However, when the partition groove 121 is etched out of the three-layer structure of the anode 131, the pixel definition layer 120 is used to insulate the anode 131. Since the first transparent electrode layer 1311 and the second transparent electrode layer 1313 are sandwiched on both sides of the first reflective electrode layer 1312, mainly to protect the first reflective electrode layer 1312 in the middle, the metal of the three sandwiches is not easy to etch, and it is easy to have problems of over-etching or incomplete etching.

[0048] Therefore, in addition to forming the anode auxiliary electrode 134 by utilizing the partition structure 141 , the present application also makes further improvements to the anode 131 on the basis of providing the anode auxiliary electrode 134 .

[0049] Figure 8 is a schematic diagram of a display panel of the second embodiment of the present application, see Figure 8As shown, other structures of the present application are basically the same as those in the first embodiment, and the main difference lies in the anode 131, the anode 131 includes a first electrode 1314, and the first electrode 1314 is formed of one or more of metal, metal alloy or metal oxide; the anode auxiliary electrode 134 includes a second reflective electrode layer 1342, and the second reflective electrode layer 1342 is formed of silver material or silver alloy material, and the second reflective electrode layer 1342 is arranged on the anode 131 and directly contacts the anode 131.

[0050] In this solution, the anode 131 includes only one electrode layer, namely, the first electrode 1314, which can be formed of one or more of metal, metal alloy or metal oxide, so that the etching of the anode 131 is easier during the process of patterning the anode 131. In addition, the second reflective electrode layer 1342 is arranged in the anode auxiliary electrode 134, that is, the reflective metal layer of the anode 131 is formed in the same environment as the light-emitting functional layer 132 by using a maskless evaporation technology, namely, using a partition structure 141, in a vacuum environment. The process of the reflective metal layer no longer requires an etching step. In addition to the advantages mentioned above, the film quality of the reflective metal layer, namely, the second reflective electrode layer 1342, can be improved.

[0051] Specifically, in order to ensure the reflection quality of the second reflective electrode layer 1342, the thickness of the second reflective electrode layer 1342 is greater than or equal to 1000 angstroms. Considering that the second reflective electrode layer 1342 generally needs to be formed of a reflective metal, such as one or both of a magnesium material and a silver material, and considering the isolation capability of the partition structure 141, the thickness of the second reflective electrode layer 1342 needs to be less than or equal to 5000 angstroms. Considering the actual situation, a suitable thickness can be selected from 1500 angstroms to 3000 angstroms.

[0052] The anode auxiliary electrode 134 further includes a second auxiliary electrode layer 1343 ; the second auxiliary electrode layer 1343 is formed of metal oxide; the second auxiliary electrode layer 1343 is disposed on the second reflective electrode layer 1342 and directly contacts the second reflective electrode layer 1342 .

[0053] In one embodiment, the second auxiliary electrode layer 1343 can be formed of a transparent electrode layer, such as ITO or IZO material. At this time, the anode 131 and the anode auxiliary electrode 134 serve as the driving electrode on one side of the light-emitting unit 130, and the three-layer sandwich structure ITO / IZO, Ag / Mg, and ITO / IZO formed by the combination of the anode 131 and the anode auxiliary electrode 134 has a good driving ability for the light-emitting functional layer 132.

[0054] In another embodiment, the second auxiliary electrode layer 1343 may be formed of silver oxide or magnesium oxide. The material of the second auxiliary electrode layer 1343 mainly depends on the material of the second reflective electrode layer 1342 .

[0055] The second auxiliary electrode layer 1343 is formed by plasma treatment on the surface of the second reflective electrode layer 1343 away from the base substrate 110 to form a metal oxide film layer as the second auxiliary electrode layer 1343. When the second reflective electrode layer 1342 is a silver electrode, the second auxiliary electrode layer 1343 is a silver oxide electrode. When the second reflective electrode layer 1342 is a magnesium electrode, the second auxiliary electrode layer 1343 is a magnesium oxide electrode.

[0056] In this solution, after the second reflective electrode layer 1342 is vacuum-deposited, the surface of the second reflective electrode layer 1342 close to the cathode 133 can be oxidized by plasma treatment, thereby forming a thinner metal oxide layer on one side, and the metal oxide layer serves as the second auxiliary electrode layer 1343. Taking silver material as an example, the second reflective electrode is a silver electrode, and the second auxiliary electrode layer 1343 is silver oxide Ag2O. The work function of the silver oxide rises to 4.8eV to 5.1eV, which can better match the HOMO (5eV to 6eV) of the organic material in the light-emitting functional layer 132. In this way, the film interface performance between the anode 131 and the light-emitting functional layer 132 is improved while reducing the difficulty of the anode 131 process, thereby improving the efficiency and service life of the light-emitting unit 130.

[0057] The process sequence in this embodiment is basically the same as that in the previous embodiment, and the difference lies in the use of materials for the anode 131 and the anode auxiliary electrode 134. When the material of the second auxiliary electrode layer 1343 is an oxide of the material of the second reflective electrode layer 1342, the following steps are further included: after the process of the second reflective electrode layer 1342 in the anode auxiliary electrode 134 is completed, the surface of the second reflective electrode layer 1342 in the opening area 101 is subjected to plasma treatment, so that the surface of the second reflective electrode layer 1342 is oxidized to form a metal oxide as the second auxiliary electrode layer 1343.

[0058] Fig. 9 is a schematic diagram of the display device of the present application, see Fig. 9 As shown, the present application further discloses a display device, wherein the display device 200 includes a driving circuit 210 and the display panel 100 in any of the above embodiments, wherein the driving circuit 210 is used to drive the display panel 100 to display.

[0059] It should be noted that the inventive concept of the present application can form a large number of embodiments, but the length of the application document is limited and it is impossible to list them one by one. Therefore, under the premise of no conflict, the embodiments or technical features described above can be arbitrarily combined to form new embodiments. After the embodiments or technical features are combined, the original technical effects will be enhanced.

[0060] The above content is a further detailed description of the present application in combination with specific optional implementation methods, and it cannot be determined that the specific implementation of the present application is limited to these descriptions. For ordinary technicians in the technical field to which the present application belongs, several simple deductions or substitutions can be made without departing from the concept of the present application, which should be deemed to fall within the scope of protection of the present application.

Claims

1. A display panel, comprising a base substrate, a pixel definition layer and a light-emitting unit, wherein the pixel definition layer is disposed on the base substrate and has a plurality of opening areas, and the light-emitting unit is disposed on the base substrate and is located in the opening areas; characterized in that: The light-emitting unit comprises an anode, a light-emitting functional layer and a cathode, wherein the anode is arranged on the substrate, the light-emitting functional layer is arranged on the anode, and the cathode is arranged on the light-emitting functional layer; The light-emitting unit further comprises an anode auxiliary electrode, the anode auxiliary electrode is arranged between the anode and the light-emitting functional layer, and the anode auxiliary electrode is formed of one or more of metal, metal alloy or metal oxide; The display panel further comprises a partition structure, and the partition structure is used to partition the anode auxiliary electrodes of two adjacent light-emitting units when the anode auxiliary electrode is deposited on the entire surface.

2. The display panel according to claim 1, characterized in that: The anode comprises a first transparent electrode layer, a first reflective electrode layer and a second transparent electrode layer, wherein the first reflective electrode layer is arranged between the first transparent electrode layer and the second transparent electrode layer; The first reflective electrode layer is formed of a reflective metal material; Wherein, the anode auxiliary electrode comprises a first auxiliary electrode layer, and the first auxiliary electrode layer is arranged on the second transparent electrode layer and directly contacts the second transparent electrode layer; Wherein, the thickness of the first auxiliary electrode layer is between 10 angstroms and 300 angstroms.

3. The display panel according to claim 1, characterized in that: The anode comprises a first electrode, wherein the first electrode is formed of one or more of a metal, a metal alloy, or a metal oxide; The anode auxiliary electrode comprises a second reflective electrode layer, the second reflective electrode layer is formed of a silver material or a silver alloy material, and the second reflective electrode layer is arranged on the anode and directly contacts the anode; The thickness of the second reflective electrode layer is between 1000 angstroms and 5000 angstroms.

4. The display panel according to claim 3, characterized in that: The anode auxiliary electrode further includes a second auxiliary electrode layer; the second auxiliary electrode layer is formed of metal oxide; the second auxiliary electrode layer is arranged on the second reflective electrode layer and directly contacts the second reflective electrode layer; Wherein, the second auxiliary electrode layer is subjected to plasma treatment to form a metal oxide film layer on the surface of the second reflective electrode layer away from the base substrate to serve as the second auxiliary electrode layer.

5. The display panel according to claim 2 or 3, characterized in that: The display panel further comprises a partition layer, which is arranged under the pixel definition layer and located on the anode and directly in contact with the anode; Under the orthographic projection of the base substrate, the boundary of the partition layer is within the projection range of the pixel definition layer and has a preset distance from the projection boundary of the pixel definition layer, and the pixel definition layer and the partition layer form a partition structure; The partition structure is used to partition the anode auxiliary electrodes of two adjacent light-emitting units when the anode auxiliary electrode is deposited on the entire surface.

6. The display panel according to claim 5, characterized in that: The isolation layer is formed of metal or metal alloy material, and the isolation layer and the anode are formed of different materials; The preset distance is greater than or equal to 5000 angstroms and less than or equal to 50000 angstroms, and the thickness of the isolation layer is greater than or equal to 100 angstroms to 10000 angstroms.

7. A method for manufacturing a display panel, characterized in that: Includes steps: Providing a substrate; Depositing and patterning an anode on a substrate; Depositing and patterning to form a pixel definition layer, and forming a plurality of opening areas; forming a partition structure; Depositing anode auxiliary electrode materials on the entire surface in sequence, and forming an anode auxiliary electrode in the opening area using the partition structure; forming a light-emitting functional layer and a cathode to form a plurality of light-emitting units in the plurality of opening areas; A display panel is formed.

8. The method for manufacturing a display panel according to claim 7, characterized in that: The step of depositing and patterning an anode on a substrate includes: Depositing an entire anode material layer and an entire barrier layer material layer in sequence on the substrate; Sequentially etching the partition layer material layer and the anode material layer at the non-opening area to form a patterned partition layer and an anode, and forming a partition groove at the etching position; The step of depositing and patterning a pixel definition layer and forming a plurality of opening areas comprises: Depositing a whole surface of pixel definition layer material on the partition layer and filling the partition grooves; Patterning a pixel definition layer and forming a plurality of opening areas, wherein a radial width of the pixel definition layer is greater than a width of the partition groove; The step of forming the partition structure includes: Using the pixel definition layer as a protective layer, etching the partition layer, so that the pixel definition layer and the partition layer form a partition structure; Wherein, under the orthographic projection of the base substrate, the boundary of the isolation layer is within the projection range of the pixel definition layer and has a preset distance from the projection boundary of the pixel definition layer.

9. The method for manufacturing a display panel according to claim 8, characterized in that: The anode is formed of one or more of metal, metal alloy or metal oxide; The anode auxiliary electrode comprises a second reflective electrode layer and a second auxiliary electrode layer, the second reflective electrode layer is formed of a silver material or a silver alloy material, the second reflective electrode layer is arranged on the anode and is in direct contact with the anode; the second auxiliary electrode layer is formed of a metal oxide; the second auxiliary electrode layer is arranged on the second reflective electrode layer and is in direct contact with the second reflective electrode layer; Wherein, the second auxiliary electrode layer is subjected to plasma treatment to form a metal oxide film layer on the surface of the second reflective electrode layer away from the substrate so as to serve as the second auxiliary electrode layer; Wherein, the thickness of the second reflective electrode layer is between 1000 angstroms and 5000 angstroms.

10. A display device, characterized in that: It comprises a driving circuit and the display panel according to any one of claims 1 to 6, wherein the driving circuit is used to drive the display panel to display.

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