Air film hole precision monitoring processing system and working method thereof

By dividing the femtosecond laser into two beams, detection and processing, and using a delay mechanism and BBO wafer to adjust the energy, the problem of damage to the lower layer of material during multi-layer material processing was solved, and precise monitoring and safe processing were achieved.

CN119634955BActive Publication Date: 2025-10-17SOUTH CHINA UNIV OF TECH
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Patent Information

Application Number
CN202510105708.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-23
Publication Date
2025-10-17
Estimated Expiration
2045-01-23

AI Technical Summary

Technical Problem

During the femtosecond laser processing, when processing air film holes in multi-layer materials, the upper layer of material is easily damaged when being processed, and the existing technology lacks an effective real-time detection and feedback mechanism, resulting in damage to the lower layer of material.

Method used

The first beam splitter is used to split the laser into two beams. The delay mechanism ensures that the detection beam reaches the material surface before the processing beam for detection. The energy is adjusted through the BBO chip, and closed-loop control is achieved in combination with the monitoring component to avoid beam interference.

Benefits of technology

It realizes precise monitoring and processing of the material surface, avoids damage to the underlying material, and improves processing accuracy and safety.

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Abstract

The application discloses a gas film hole precision monitoring processing system and a working method thereof. The gas film hole precision monitoring processing system comprises a femtosecond laser, a first beam splitter, a working laser assembly, a detection laser assembly, a first semi-transparent mirror and a monitoring assembly. The first beam splitter is used for splitting the laser emitted by the femtosecond laser into a first light beam and a second light beam. The first light beam is subjected to time delay processing in the working laser assembly. The first light beam and the second light beam pass through the first semi-transparent mirror and are projected onto the material surface in sequence. The monitoring assembly detects the material surface based on the reflected second light beam. The same laser is split into the first light beam used for laser processing and the second light beam used for detection by the first beam splitter. The first light beam is subjected to time delay by a time delay mechanism, so that the second light beam reaches the material surface first to complete surface detection, and then the first light beam processes the material, thereby avoiding mutual interference of the two light beams. The application relates to the field of femtosecond laser micro-processing.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of femtosecond laser micro-processing, in particular to a gas film hole precision monitoring processing system and a working method thereof. BACKGROUND

[0002] In the process of femtosecond laser processing, due to the large energy of the laser and the existence of Rayleigh length, the laser processed usually has a certain depth, and has a destructive effect on the material within a certain defocusing distance range. In the equipment requiring gas film holes, the upper layer of the gas film hole is usually a heat-conducting material, and the lower surface is a sealing material of various circuits and other modules in the equipment. If the distance between the two layers of materials is close, in the process of processing multiple layers of materials by femtosecond laser, the problem of damaging the lower layer of material while processing the upper layer of material will occur, so a means of processing and detecting at the same time is needed.

[0003] And in order to detect the processing state of the material surface, the detection light should reach the sample surface before the processing light in the processing process to provide feedback, so that it can be judged whether to continue processing or adjust the laser energy before the next pulse arrives, to prevent the lower layer of material from being broken through. SUMMARY

[0004] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides a gas film hole precision monitoring processing system, which can detect the processing state of the material surface, thereby performing closed-loop control on the laser processing process.

[0005] The present application also provides a working method for the above-mentioned gas film hole precision monitoring processing system.

[0006] The gas film hole precision monitoring processing system according to the first aspect of the present application comprises:

[0007] a femtosecond laser;

[0008] a first beam splitter for splitting the laser emitted by the femtosecond laser into a first light beam and a second light beam, the energy of the first light beam being higher than that of the second light beam;

[0009] a working laser assembly comprising a time delay mechanism, the time delay mechanism comprising a first time delay mirror set, a second time delay mirror set and a linear motor, the first light beam being reflected by the first time delay mirror set and the second time delay mirror set in turn, the linear motor being connected with the second time delay mirror set, and the linear motor driving the second time delay mirror set to move to adjust the distance between the second time delay mirror set and the first time delay mirror set;

[0010] a detection laser assembly comprising a BBO wafer for adjusting the output power of the second light beam;

[0011] a first semi-transparent mirror for reflecting the first light beam to the material surface and transmitting the second light beam to irradiate the material surface;

[0012] a monitoring component, the second light beam is reflected to the monitoring component by the material surface.

[0013] According to the gas film hole precision monitoring and processing system provided by the embodiment of the present application, the same laser is divided into a first light beam for laser processing and a second light beam for detection by using a first beam splitter, the first light beam is delayed by a delay mechanism, and the second light beam reaches the material surface first to complete surface detection, and then the first light beam processes the material, thereby avoiding mutual interference of the two light beams.

[0014] According to some embodiments of the present application, the energy ratio of the first light beam to the second light beam is 9:1.

[0015] According to some embodiments of the present application, the first delay mirror group includes a first mirror and a second mirror, the second delay mirror group includes a third mirror and a fourth mirror, and the first light beam sequentially passes through the first mirror, the third mirror, the fourth mirror and the second mirror.

[0016] According to some embodiments of the present application, a beam shrinking component is arranged in each of the working laser component and the detection laser component, the beam shrinking component includes a lenticular lens and a flat concave-convex mirror, and the light beam sequentially passes through the lenticular lens and the flat concave-convex mirror to reduce the light spot of the light beam.

[0017] According to some embodiments of the present application, a first half-wave plate and a Glan prism are arranged in each of the working laser component and the detection laser component, the first half-wave plate is installed on a rotary motor, and the light beam sequentially passes through the first half-wave plate and the Glan prism.

[0018] According to some embodiments of the present application, the detection laser component further includes a second half-wave plate, the second half-wave plate is arranged before the BBO wafer, and is used for adjusting the energy of the second light beam entering the BBO wafer.

[0019] According to some embodiments of the present application, the detection laser component further includes a second semi-transparent mirror and a light blocking plate, the second semi-transparent mirror reflects the second light beam to the first semi-transparent mirror, and the light blocking plate is arranged on one side of the second semi-transparent mirror to absorb the light passing through the second semi-transparent mirror.

[0020] According to some embodiments of the present application, the gas film hole precision monitoring machining system further comprises a focusing mirror, which focuses both the first light beam and the second light beam on the material surface.

[0021] According to some embodiments of the present application, the monitoring assembly comprises a second beam splitter, a photodetector and a variable focus monitoring CCD, the second light beam reflected by the material surface passes through the second beam splitter, which divides the second light beam into two light beams that enter the photodetector and the variable focus monitoring CCD.

[0022] The working method according to the second aspect of the embodiments of the present application is performed on the above-mentioned gas film hole precision monitoring machining system, comprising the following steps:

[0023] The femtosecond laser emits laser light and projects it to the first beam splitter;

[0024] The first beam splitter divides the laser light into the first light beam and the second light beam, wherein the first light beam enters the working laser assembly and the second light beam enters the detection laser assembly;

[0025] The first light beam sequentially passes through the first delay mirror set and the second delay mirror set, and the linear motor adjusts the distance between the first delay mirror set and the second delay mirror set, thereby changing the propagation time of the first light beam;

[0026] The second light beam passes through the BBO wafer to adjust the output power;

[0027] The second light beam reaches the first semi-transparent mirror before the first light beam, and is projected to the material surface through the first semi-transparent mirror;

[0028] The second light beam is reflected by the material surface to the monitoring assembly to detect the current state of the material surface;

[0029] The first light beam reaches the first semi-transparent mirror and is reflected to the material surface, and the first light beam performs laser processing on the material.

[0030] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter. BRIEF DESCRIPTION OF DRAWINGS

[0031] The accompanying drawings are included to provide a further understanding of the technical solutions of the present application, and constitute a part of the specification, and are used together with the embodiments disclosed in the present application to explain the technical solutions of the present application, and do not constitute a limitation on the technical solutions of the present application.

[0032] Figure 1 FIG. 1 is a structural schematic diagram of a gas film hole precision monitoring machining system according to an embodiment of the first aspect of the present application;

[0033] Figure 2 FIG. 4 is a time delay schematic diagram of a first light beam and a second light beam in the gas film hole precision monitoring machining system according to the first aspect of the present application.

[0034] The figure reference: 100-femtosecond laser, 200-first beam splitter, 210-first light beam, 220-second light beam, 310-time delay mechanism, 311-first time delay mirror group, 312-second time delay mirror group, 313-first mirror, 314-second mirror, 315-third mirror, 316-fourth mirror, 317-linear motor, 410-BBO wafer, 420-second half wave plate, 430-second half light mirror, 440-light shield, 500-first half light mirror, 600-monitoring assembly, 610-second beam splitter, 620-photodetector, 630-variable focus monitoring CCD, 700-light beam condensing assembly, 710-biconvex lens, 720-flat convex-concave mirror, 800-first half wave plate, 900-Glan prism, 1000-focusing mirror. DETAILED DESCRIPTION

[0035] The embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below are exemplary only, and are used only for explaining the present application, and cannot be understood as a limitation of the present application.

[0036] In the description of the present application, it is understood that the orientation description, such as the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0037] In the description of the present application, if the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, more than, etc. is understood as not including the number, above, below, etc. is understood as including the number. If it is described that the first, second is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of technical features indicated.

[0038] In the description of the present application, the words such as arrangement, installation, connection and the like should be understood in a broad sense unless otherwise explicitly defined, and the person skilled in the art can determine the specific meaning of the above words in the present application in combination with the specific content of the technical solution.

[0039] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the exemplary description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0040] In the femtosecond laser processing process, due to the large energy of the laser and the existence of the Rayleigh length, the laser processed usually has a certain depth, and has a destructive effect on the material within a certain defocusing distance range. In the equipment requiring gas film holes, the upper layer of the gas film hole is a heat-conducting material, and the lower surface is a sealing material of various circuits and other modules in the equipment. If the distance between the two layers of materials is close, in the process of processing multiple layers of materials by femtosecond laser, the problem of damaging the lower layer of material while processing the upper layer of material will occur, so a means of processing and detecting at the same time is needed.

[0041] Moreover, in order to detect the processing state of the material surface, the detection light should reach the sample surface first to detect and provide feedback before the next pulse arrives, so that it can be judged whether to continue processing or adjust the laser energy to prevent the lower layer of material from being broken through.

[0042] To this end, the present application proposes a gas film hole precision monitoring and processing system, which divides the same laser into a first beam 210 for laser processing and a second beam 220 for detection by using a first beam splitter 200. The first beam 210 passes through a delay mechanism 310 for delay, ensuring that the second beam 220 reaches the material surface first to complete surface detection, and then the first beam 210 processes the material, avoiding mutual interference between the two beams.

[0043] In addition, the present application also proposes a working method for the above-mentioned gas film hole precision monitoring and processing system.

[0044] Reference Figure 1The gas film hole precision monitoring processing system in the first aspect embodiment of the application comprises a femtosecond laser 100, a first beam splitter 200, a working laser assembly, a detection laser assembly, a first semi-transparent mirror 500 and a monitoring assembly 600. The femtosecond laser 100 is configured to generate laser light, and the first beam splitter 200 is configured to split the laser light emitted by the femtosecond laser 100 into a first light beam 210 and a second light beam 220. The first light beam 210 is incident into the working laser assembly and is subjected to time delay processing via a time delay mechanism 310 therein, and the second light beam 220 is incident into the detection laser assembly to adjust the laser power. The first light beam 210 and the second light beam 220 both pass through the first semi-transparent mirror 500 and are projected onto the material surface in sequence. The second light beam 220 is reflected by the material surface to the monitoring assembly 600 and is detected by the monitoring assembly 600, and the first light beam 210 performs laser processing on the material surface.

[0045] Specifically, the energy of the first light beam 210 is higher than that of the second light beam 220, and the energy ratio of the two is 9:1, which ensures that the first light beam 210 has higher energy than the second light beam 220 to complete the laser processing work, and avoids that the second light beam 220 has too high energy to damage the material surface in the detection process.

[0046] The working laser assembly comprises the time delay mechanism 310, which comprises a first time delay mirror set 311, a second time delay mirror set 312 and a linear motor 317. The first light beam 210 is reflected by the first time delay mirror set 311 and the second time delay mirror set 312 in sequence, and the linear motor 317 is connected with the second time delay mirror set 312. The linear motor 317 drives the second time delay mirror set 312 to move to adjust the distance between the second time delay mirror set 312 and the first time delay mirror set 311. When the distance between the first time delay mirror set 311 and the second time delay mirror set 312 increases, the propagation distance of the first light beam 210 becomes longer to enhance the time delay effect; when the distance between the first time delay mirror set 311 and the second time delay mirror set 312 decreases, the propagation distance of the first light beam 210 becomes shorter to weaken the time delay effect. Referring to Figure 2 , the time delay control of the first light beam 210 can be realized.

[0047] The detection laser assembly comprises a BBO wafer 410, which is configured to adjust the output power of the second light beam 220 to avoid damage to the material due to too high energy.

[0048] The first semi-transparent mirror 500 is configured to reflect the first light beam 210 to the material surface and transmit the second light beam 220 to irradiate the material surface. After passing through the first semi-transparent mirror 500, the first light beam 210 and the second light beam 220 converge and maintain the same optical path to project onto the material surface. Since the material surface is relatively smooth, the second light beam 220 can be reflected, and the reflected second light beam 220 enters the monitoring assembly 600 and is sensed by a sensor therein.

[0049] Further, for the time delay mechanism 310, the first time delay mirror set 311 includes a first mirror 313 and a second mirror 314, and the second time delay mirror set 312 includes a third mirror 315 and a fourth mirror 316. The first light beam 210 passes through the first mirror 313, the third mirror 315, the fourth mirror 316 and the second mirror 314 in sequence, and is finally projected from the second mirror. The light path of the first light beam 210 in the time delay mechanism 310 is in the shape of “U”, and the first light beam 210 makes a round trip between the first time delay mirror set 311 and the second time delay mirror set 312, so that when the linear motor 317 changes the distance between the first time delay mirror set 311 and the second time delay mirror set 312, the time delay effect on the first light beam 210 is more obvious.

[0050] Further, the working laser assembly and the detection laser assembly are both provided with a light beam shrinking assembly 700, which includes a lenticular lens 710 and a flat concave-convex mirror 720. The light beam passes through the lenticular lens 710 and the flat concave-convex mirror 720 in sequence to reduce the light spot of the light beam.

[0051] Further, the working laser assembly and the detection laser assembly are both provided with a first half-wave plate 800 and a Glan prism 900. The first half-wave plate 800 is installed on a rotary motor, and the light beam passes through the first half-wave plate 800 and the Glan prism 900 in sequence. This can realize stepless adjustment of the processing light energy, which can be adjusted from 0 to 100%, so as to realize controllable detection light energy.

[0052] Further, the detection laser assembly is further provided with a second half-wave plate 420, which is arranged before the BBO wafer 410 and is used for adjusting the energy of the second light beam 220 entering the BBO wafer 410.

[0053] Further, the detection laser assembly further includes a second half-transmissive mirror 430 and a light blocking plate 440. The second half-transmissive mirror 430 reflects the second light beam 220 to the first half-transmissive mirror 500, and the light blocking plate 440 is arranged on one side of the second half-transmissive mirror 430 to absorb the light passing through the second half-transmissive mirror 430, so as to avoid damage to other components caused by the emitted laser.

[0054] Further, the gas film hole precision monitoring and processing system further includes a focusing mirror 1000, which focuses the first light beam 210 and the second light beam 220 on the material surface.

[0055] Further, the monitoring assembly 600 comprises a second beam splitter 610, a photodetector 620 and a variable focus monitoring CCD 630. The second light beam 220 reflected by the material surface passes through the second beam splitter 610, which splits the second light beam 220 into two beams that enter the photodetector 620 and the variable focus monitoring CCD 630. The photodetector is used to detect the light amplitude of the second light beam 220, and the intensity information of the material surface reflection can be obtained. Another beam of light split by the second beam splitter 610 illuminates the variable focus monitoring CCD 630 as a light source, and the material surface state can be observed.

[0056] Notably, the gas film hole precision monitoring and machining system further comprises a controller capable of receiving the monitoring data of the monitoring assembly 600, feeding back the femtosecond laser 100 by observing the material surface processing degree, adjusting the energy and the spot, reducing the energy and the Rayleigh distance length, and performing precision machining with small energy.

[0057] It is easily understood that the gas film hole precision monitoring and machining system is further provided with a plurality of mirrors to adjust the optical path, thereby adapting to the internal structure of the equipment, which will not be described here.

[0058] The working method of the gas film hole precision monitoring and machining system according to the second aspect of the present application comprises the following steps:

[0059] S100. The femtosecond laser 100 emits laser light and projects it to the first beam splitter 200;

[0060] S200. The first beam splitter 200 splits the laser light into a first light beam 210 and a second light beam 220, wherein the first light beam 210 enters the working laser assembly, and the second light beam 220 enters the detection laser assembly;

[0061] S300. The first light beam 210 passes through the first delay mirror group 311 and the second delay mirror group 312 in turn, and the linear motor 317 adjusts the distance between the first delay mirror group 311 and the second delay mirror group 312, thereby changing the propagation time of the first light beam 210;

[0062] S400. The second light beam 220 passes through the BBO wafer 410 to adjust the output power;

[0063] S500. The second light beam 220 reaches the first half-mirror 500 before the first light beam 210, and is projected to the material surface through the first half-mirror 500;

[0064] S600. The second light beam 220 is reflected by the material surface to the monitoring assembly 600, and the current material surface condition is detected;

[0065] S700. The first light beam 210 reaches the first semi-transparent mirror 500 and is reflected to the material surface, and the first light beam 210 performs laser processing on the material.

[0066] The embodiments of the present application are described in detail above with reference to the drawings, but the present application is not limited to the above-described embodiments, and various changes can be made within the scope of knowledge of those skilled in the art without departing from the purpose of the present application. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. A precise monitoring and processing system for air film holes, characterized in that: include: Femtosecond lasers; a first beam splitter, configured to split the laser light emitted by the femtosecond laser into a first beam and a second beam, wherein the energy of the first beam is higher than the energy of the second beam, and the first beam performs laser processing on the surface of a material; A working laser assembly, comprising a delay mechanism, the delay mechanism comprising a first delay reflector group, a second delay reflector group, and a linear motor, wherein the first light beam is sequentially reflected by the first delay reflector group and the second delay reflector group, the linear motor is connected to the second delay reflector group, and the linear motor drives the second delay reflector group to move so as to adjust the distance between the second delay reflector group and the first delay reflector group; A detection laser assembly, comprising a BBO chip, wherein the BBO chip is used to adjust the output power of the second light beam; a first semi-transparent mirror, configured to reflect the first light beam to a surface of a material and allow the second light beam to pass therethrough so as to illuminate the surface of the material; a monitoring component, wherein the second light beam is reflected by the surface of the material to the monitoring component; The controller can receive the monitoring data of the monitoring component, provide feedback to the femtosecond laser by observing the degree of surface processing of the material, and adjust the energy and spot.

2. The air film hole precision monitoring and processing system according to claim 1 is characterized in that: The energy ratio of the first light beam to the energy of the second light beam is 9:

1.

3. The air film hole precision monitoring and processing system according to claim 1 is characterized in that: The first delay reflector group includes a first reflector and a second reflector, the second delay reflector group includes a third reflector and a fourth reflector, and the first light beam passes through the first reflector, the third reflector, the fourth reflector and the second reflector in sequence.

4. The air film hole precision monitoring and processing system according to claim 1 is characterized in that: The working laser assembly and the detection laser assembly are both provided with a beam reduction assembly, which includes a biconvex lens and a plano-concave-convex mirror. The light beam passes through the biconvex lens and the plano-concave-convex mirror in sequence to reduce the beam spot.

5. The air film hole precision monitoring and processing system according to claim 1 is characterized in that: The working laser assembly and the detection laser assembly are both provided with a first half-wave plate and a Glan prism. The first half-wave plate is mounted on the rotating motor, and the light beam passes through the first half-wave plate and the Glan prism in sequence.

6. The air film hole precision monitoring and processing system according to claim 5, characterized in that: The detection laser assembly is further provided with a second half-wave plate, which is arranged before the BBO chip and is used to adjust the energy of the second light beam incident on the BBO chip.

7. The air film hole precision monitoring and processing system according to claim 1 is characterized in that: The detection laser assembly also includes a second semi-transparent mirror and a light baffle. The second semi-transparent mirror reflects the second light beam to the first semi-transparent mirror. The light baffle is mounted on one side of the second semi-transparent mirror to absorb the light passing through the second semi-transparent mirror.

8. The air film hole precision monitoring and processing system according to claim 1, characterized in that: The air film hole precision monitoring and processing system further includes a focusing mirror, which focuses both the first light beam and the second light beam on the material surface.

9. The air film hole precision monitoring and processing system according to claim 1, characterized in that: The monitoring component includes a second beam splitter, a photodetector and a variable-focus monitoring CCD. The second light beam reflected by the surface of the material passes through the second beam splitter, and the second beam splitter splits the second light beam into two light beams that enter the photodetector and the variable-focus monitoring CCD.

10. A working method for the air film hole precision monitoring and processing system according to any one of claims 1 to 9, characterized in that: include: The femtosecond laser emits laser light and projects it onto the first beam splitter; The first beam splitter splits the laser into the first beam and the second beam, wherein the first beam is emitted into the working laser assembly and the second beam is emitted into the detection laser assembly; The first light beam passes through the first delay reflector group and the second delay reflector group in sequence, and the linear motor adjusts the distance between the first delay reflector group and the second delay reflector group, thereby changing the propagation time of the first light beam; The second light beam passes through the BBO chip to adjust the output power; The second light beam reaches the first semi-transparent mirror before the first light beam, and is projected onto the surface of the material through the first semi-transparent mirror; The second light beam is reflected by the surface of the material to the monitoring component to detect the current condition of the material surface; The first light beam reaches the first semi-transparent mirror and is reflected by it to the surface of the material, and the first light beam performs laser processing on the material.

Citation Information

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