High-thermal-conductivity silica gel sheet for semiconductor manufacturing process

Abstract

The invention discloses a high thermal conductivity silica gel sheet for a semiconductor manufacturing process, and particularly relates to the technical field of silica gel sheets, the high thermal conductivity silica gel sheet comprises a thermal conductivity silica gel layer, the top of the thermal conductivity silica gel layer is provided with a PET heavy release film layer, and the bottom of the thermal conductivity silica gel layer is provided with a PE grid light release film layer. Through the arrangement of the heat-conducting silica gel layer, the PET heavy release film layer and the PE grid light release film layer, the surface of the film has adsorbability, the film has high heat conductivity, good toughness and high shear strength, can realize low interface thermal resistance performance under relatively low pressure, can be applied between a power device and a heat dissipation aluminum sheet or a machine shell, can effectively remove air, and has a good heat dissipation effect. And a good filling effect is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicone sheets, and more specifically, to a high thermal conductivity silicone sheet for semiconductor manufacturing process. Background Art

[0002] Silicone sheet is a soft material made of silicone polymer. It has good flexibility, high temperature tolerance and electrical insulation properties. Silicone sheet is used in semiconductor manufacturing process.

[0003] Although the silicone sheets in the prior art can be used normally, they still have many disadvantages in actual use. For example, the silicone sheets in the prior art cannot effectively discharge air during use and cannot achieve a good filling effect, which makes the actual use effect of the silicone sheets in the prior art poor. Summary of the invention

[0004] In order to overcome the above-mentioned defects of the prior art, an embodiment of the present invention provides a high thermal conductivity silicone sheet for semiconductor process. By providing a thermal conductive silicone layer, a PET heavy release film layer and a PE mesh light release film layer, the surface of the present invention has self-adsorption, high thermal conductivity, good toughness, high shear strength, and low interface thermal resistance performance can be achieved under relatively low pressure. It is applied between power devices and heat dissipation aluminum sheets or machine casings, and can effectively exclude air and achieve a good filling effect to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solution: a high thermal conductivity silicone sheet for semiconductor process, comprising a thermal conductive silicone layer, a PET heavy release film layer is arranged on the top of the thermal conductive silicone layer, and a PE grid light release film layer is arranged on the bottom of the thermal conductive silicone layer.

[0006] In a preferred embodiment, the thickness of the thermally conductive silicone layer is set to 0.2-4 mm.

[0007] In a preferred embodiment, the thickness of the PET heavy release film layer is set to 0.15-2 mm.

[0008] In a preferred embodiment, the thickness of the PE mesh light release film layer is set to 0.15-2 mm.

[0009] Technical effects and advantages of the present invention: The present invention is provided with a thermally conductive silicone layer, a PET heavy release film layer and a PE mesh light release film layer. The surface of the present invention has self-adsorption, high thermal conductivity, good toughness, and high shear strength. Low interface thermal resistance performance can be achieved under relatively low pressure. It is applied between power devices and heat dissipation aluminum sheets or machine casings to effectively exclude air and achieve a good filling effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0011] Figure 2 It is a schematic diagram of the overall cross-sectional structure of the present invention.

[0012] The accompanying drawings are marked as follows: 1. thermal conductive silicone layer; 2. PET heavy release film layer; 3. PE mesh light release film layer. DETAILED DESCRIPTION

[0013] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0014] As attached Figure 1 and attached Figure 2 As shown, the present invention provides a high thermal conductivity silicone sheet for semiconductor process, including a thermal conductive silicone layer 1, a PET heavy release film layer 2 is arranged on the top of the thermal conductive silicone layer 1, and a PE mesh light release film layer 3 is arranged on the bottom of the thermal conductive silicone layer 1.

[0015] The specific implementation method is as follows: when using the present invention, through the thermal conductive silicone layer 1, the PET heavy release film layer 2 and the PE mesh light release film layer 3, the silicone sheet is off-white in color, 0.5-8 mm in thickness, and has a density of 3.2 g / cm under the ASTM D792 standard. 3 , hardness is 65 shore 00 under ASTM D2240 standard, flame retardant grade is V-0 UL-94 under UL94 standard, thermal conductivity is 3.0W / mk under ASTMD5470 standard, elongation is 50% under ASTM D412 standard, tensile strength is 0.2Mpa under ASTM D412 standard, breakdown strength is greater than or equal to 6KV / mm under ASTM D149 standard, volume resistivity is greater than 10 under ASTM D257 standard 12 Ω.cm, the feel of the present invention is that the surface has self-adsorbability. The present invention has high thermal conductivity, good toughness, and high shear strength. Low interface thermal resistance performance can be achieved under relatively low pressure. It is applied between power devices and heat dissipation aluminum sheets or machine casings to effectively exclude air and achieve a good filling effect.

[0016] Working principle of the present invention: Refer to the instruction manual Figure 1 and attached Figure 2When using the present invention, by providing a thermally conductive silicone layer 1, a PET heavy release film layer 2 and a PE mesh light release film layer 3, the surface of the present invention has self-adsorption, high thermal conductivity, good toughness, and high shear strength. Low interface thermal resistance performance can be achieved under relatively low pressure. It is applied between power devices and heat dissipation aluminum sheets or machine casings to effectively exclude air and achieve a good filling effect.

[0017] Finally, a few points should be explained: First, in the description of this application, it should be noted that, unless otherwise specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, which may refer to mechanical connection or electrical connection, or internal communication between two components, or direct connection. "upper", "lower", "left", "right", etc. are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may change; Secondly: In the drawings of the embodiments disclosed in the present invention, only the structures related to the embodiments disclosed in the present invention are involved, and other structures can refer to the general design. In the absence of conflict, the same embodiment and different embodiments of the present invention can be combined with each other; Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A high thermal conductivity silicone sheet for semiconductor manufacturing process, comprising a thermal conductive silicone layer (1), characterized in that: A PET heavy release film layer (2) is arranged on the top of the thermally conductive silicone layer (1), and a PE mesh light release film layer (3) is arranged on the bottom of the thermally conductive silicone layer (1).

2. The high thermal conductivity silicone sheet for semiconductor process according to claim 1, characterized in that: The thickness of the thermally conductive silicone layer (1) is set to 0.2-4 mm.

3. The high thermal conductivity silicone sheet for semiconductor process according to claim 1, characterized in that: The thickness of the PET heavy release film layer (2) is set to be 0.15-2 mm.

4. The high thermal conductivity silicone sheet for semiconductor process according to claim 1, characterized in that: The thickness of the PE mesh light release film layer (3) is set to 0.15-2 mm.

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