A metal complex acceptor material, a preparation method thereof and an optoelectronic device

Abstract

The application discloses a metal complex acceptor material, a preparation method thereof and a photoelectric device. A structural general formula of the metal complex acceptor material is shown in the following formula: wherein M is a heavy metal ion, R1 is an alkyl group with a length of C1-C25; M1 is selected from one of the following groups: R2 is a phenyl group, and R2 is located at any possible position on a ring; Ar is selected from one of the following groups: R3 is an alkyl group with a length of C1-C20; and a dotted line represents a connecting site. The non-fullerene metal complex acceptor material provided by the application takes a metal ion as a symmetry center, has an electron-withdrawing group composed of benzothiadiazole above and below, has an overall symmetrical structure, has higher electron transmission on a plane, can stabilize an electron structure of an acceptor material, makes carriers in the acceptor material more stable, further increases stability of the acceptor material, and a solar cell prepared by the method has a photoelectric conversion efficiency close to 18%.

Description

Technical Field

[0001] This invention relates to the field of receptor materials technology, and in particular to a metal complex receptor material, its preparation method, and optoelectronic devices. Background Technology

[0002] A solar cell is a thin film of photoelectric semiconductors that directly generates electricity using sunlight. Also known as a "solar chip" or "photovoltaic cell," it can output voltage instantaneously and generate current when a circuit is established, provided certain illumination conditions are met. The development of solar cells can be traced back to 1839 when Becquerel of France first discovered the photoelectric effect in liquid electrolytes. However, it wasn't until 1883 that Fritts of the United States prepared the first solar cell using selenium. After half a century of development, in 1930, Schottky proposed the "photovoltaic effect" theory of the Cu₂O barrier. In the same year, Longer first proposed that the "photovoltaic effect" could be used to manufacture "solar cells," converting solar energy into electrical energy. Subsequently, Pearson of Bell Labs in the United States invented a monocrystalline silicon solar cell with a battery efficiency of 6% in 1954, ushering in a new era of pn junction solar cells. Even today, pn junction solar cells still hold a dominant position in the photovoltaic field. However, compared with traditional silicon-based and other inorganic metal compound solar cells, organic solar cells (OPVs) have the following unique advantages: (1) organic materials are lightweight and flexible; (2) organic materials are easy to design, cut, and synthesize chemically, without resource limitations; (3) device fabrication processes are simple, and solution processing methods such as printing, inkjet printing, and lithography can be used, resulting in low manufacturing costs; (4) large-area flexible devices are easily realized. However, the photoelectric conversion efficiency of existing organic solar cells still needs further improvement. Therefore, developing novel high-performance non-fullerene acceptor materials to further improve the photoelectric efficiency of organic solar cells is of great significance for realizing the commercialization of organic solar cell performance. Summary of the Invention

[0003] In view of the shortcomings of the prior art, the purpose of this invention is to provide metal complex acceptor materials, their preparation methods and optoelectronic devices, in order to solve the problem that the photoelectric conversion efficiency of solar cells based on existing acceptor materials still needs to be further improved.

[0004] The technical solution of the present invention is as follows:

[0005] In a first aspect, the present invention provides a metal complex receptor material, wherein the general structural formula of the metal complex receptor material is:

[0006]

[0007] Wherein, M is a heavy metal ion, and R1 is a C1-C25 alkyl group;

[0008] M1 is selected from one of the following groups:

[0009]

[0010]

[0011] R2 is H or phenyl, and R2 is located at any possible position on its ring;

[0012] Ar is selected from one of the following groups:

[0013] R3 is a C1-C20 alkyl group;

[0014] In the above structural formula Indicates the connection site.

[0015] Optionally, the heavy metal ions include one of nickel ions, copper ions, manganese ions, and chromium ions.

[0016] A second aspect of the present invention provides a method for preparing the metal complex receptor material of the present invention as described above, comprising the steps of:

[0017] 4,7-Dibromo-5,6-dinitrobenzothiadiazole and compound A were subjected to a Stille coupling reaction to give compound B;

[0018] Compound B was subjected to a condensation and ring-closure reaction to obtain compound C;

[0019] Compound C was reacted with a haloalkane via a nucleophilic substitution reaction to yield compound D;

[0020] Compound D was subjected to a Vilsmeier-Haack reaction to yield compound E;

[0021] Compound E and the first compound are reacted by Knoevenagel reaction, or compound E and the second compound are reacted by substitution reaction to obtain compound F;

[0022] The metal complex acceptor material was obtained by complexing the compound F.

[0023] Among them, compound A is Compound B is Compound C is Compound D is Compound E is

[0024] The first compound is selected from one of the following structures:

[0025] The second compound is selected from one of the following structures:

[0026]

[0027]

[0028] X is a halogen; compound F is...

[0029]

[0030] Optionally, 4,7-dibromo-5,6-dinitrobenzothiadiazole and compound A are added to a first solvent at a molar ratio of 1:(2-3), and then 0.01-1% of the molar amount of compound A as a first catalyst is added. The mixture is refluxed at 80-120°C for 24-48 hours to carry out a Stille coupling reaction to obtain compound B.

[0031] Optionally, compound B and the second catalyst are added to the second solvent and refluxed at 120–200°C for 12–48 hours to carry out a condensation and ring-closing reaction to obtain compound C.

[0032] Optionally, compound C and a haloalkane are added to a third solvent, followed by the addition of a neutralizing agent. The mixture is then refluxed at 80–150 °C for 12–24 hours to carry out a nucleophilic substitution reaction, yielding compound D.

[0033] Optionally, compound D and the formylation reagent are added to a fourth solvent and refluxed at 80–150 °C for 8–48 hours to obtain compound E.

[0034] Optionally, compound E and the first compound are added to the fifth solvent, followed by the addition of an acid-binding agent. The mixture is then refluxed at 60–100 °C for 12–24 hours to produce the Knoevenagel reaction, yielding compound F.

[0035] Optionally, compound F and heavy metal salt are added to the sixth solvent, followed by the sixth catalyst, and the complexation reaction is carried out at a temperature of 80–150°C under alkaline conditions for 48–72 hours to obtain the metal complex acceptor material.

[0036] A third aspect of the present invention provides an optoelectronic device comprising a photosensitive layer, wherein the photosensitive layer comprises the metal complex acceptor material of the present invention as described above.

[0037] Beneficial Effects: The non-fullerene metal complex acceptor material provided by this invention has a metal ion as the center of symmetry, with electron-withdrawing groups composed of benzothiadiazoles on the top and bottom (the top and bottom are ladder-shaped fused-ring structures with fused-ring benzothiadiazoles as the central core, and electron-withdrawing end groups connected to both ends of the central core). The overall structure is symmetrical, resulting in more efficient electron transport in the plane. Simultaneously, it stabilizes the electronic structure of the acceptor material, making the charge carriers in the acceptor material more stable and further increasing the stability of the acceptor material. R1 and R3 are long alkyl chains, which can increase the solubility of the acceptor material. M1 can further increase the overall conjugation of the acceptor material and improve the charge carrier transport performance. The metal complex acceptor material provided in the embodiments of this invention has good solubility and strong film-forming properties, and the prepared solar cell has a photoelectric conversion efficiency of nearly 15%. Attached Figure Description

[0038] Figure 1 The present invention relates to the structural formula and molecular structure of a non-chelating receptor material in an embodiment of the present invention.

[0039] Figure 2 The present invention relates to the structural formula and molecular structure of a metal complex receptor material in an embodiment of the present invention. Detailed Implementation

[0040] This invention provides a metal complex acceptor material, its preparation method, and an optoelectronic device. To make the objectives, technical solutions, and effects of this invention clearer and more explicit, the invention is further described in detail below. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0042] This invention provides a metal complex receptor material, wherein the general structural formula of the metal complex receptor material is:

[0043]

[0044] Wherein, M is a heavy metal ion, and R1 is a C1-C25 alkyl group (R1 in the different structural formulas below is a C1-C25 alkyl group).

[0045] M1 is selected from one of the following groups:

[0046]

[0047] (M1 in the different structural formulas below is selected from one of these groups);

[0048] R2 is H or phenyl, and R2 is located at any possible position on its ring (R2 in the different structural formulas below is H or phenyl);

[0049] Ar is selected from one of the following groups:

[0050] (The structures of Ar involved in the different structural formulas below are all the same as this), R3 is a C1-C20 alkyl group;

[0051] In the above structural formula, the dashed lines represent connection points.

[0052] The non-fullerene metal complex acceptor material provided in this invention has a metal ion as its center of symmetry, with electron-withdrawing groups composed of benzothiadiazoles on the top and bottom (the top and bottom are ladder-shaped fused-ring structures with fused-ring benzothiadiazoles as the central core, and electron-withdrawing end groups connected to both ends of the central core). This overall symmetrical structure allows for more efficient electron transport in a planar plane and stabilizes the electronic structure of the acceptor material, making the charge carriers in the acceptor material more stable and further increasing its stability. R1 and R3 are long alkyl chains, which can increase the solubility of the acceptor material. M1 can further increase the overall conjugation of the acceptor material and improve the charge carrier transport performance. The metal complex acceptor material provided in this invention has good solubility and strong film-forming properties, and the solar cells prepared from it have a photoelectric conversion efficiency of close to 15%.

[0053] In some implementations, for example, R1 is -CH3, -C2H5, -C3H7, -C4H9, -C4H 11 -C 10 H 21 C 15 H 31 or -C 25 H 51 etc.; R3 is -CH3, -C2H5, -C3H7, -C4H9, -C4H 11 -C 10 H 21 C 15 H 31 or -C 20 H 41 etc.; R2 is H, benzene, toluene or naphthalene, etc.

[0054] In some embodiments, the heavy metal ions include, but are not limited to, one of nickel ions, copper ions, manganese ions, and chromium ions.

[0055] A second aspect of the present invention provides a method for preparing the metal complex receptor material of the present invention as described above, comprising the steps of:

[0056] S1. 4,7-Dibromo-5,6-dinitrobenzothiadiazole and compound A were subjected to a Stille coupling reaction to obtain compound B;

[0057] S2. Compound B is subjected to a condensation and ring-closing reaction to obtain compound C;

[0058] S3. Compound C is reacted with a haloalkane via a nucleophilic substitution reaction to obtain compound D;

[0059] S4. Compound D is subjected to a Vilsmeier-Haack reaction to obtain compound E;

[0060] S5. Compound E and the first compound are reacted by Knoevenagel reaction or compound E and the second compound are reacted by substitution reaction to obtain compound F;

[0061] S6. The compound F is subjected to a complexation reaction to obtain the metal complex acceptor material.

[0062] This invention uses 4,7-dibromo-5,6-dinitrobenzothiadiazole as a starting material. A fused-ring benzothiadiazole central core is obtained sequentially via Stille coupling, condensation ring closure, nucleophilic substitution, and Vilsmeier-Haack reaction. An end-group structure is then introduced via the Knoevenagel reaction, and finally, the metal complex acceptor material is obtained through a complexation reaction. The preparation method is simple and efficient.

[0063] Among them, compound A is Compound B is Compound C is Compound D is Compound E is

[0064] The first compound is selected from one of the following structures:

[0065]

[0066]

[0067] The second compound is selected from one of the following structures:

[0068]

[0069] X is a halogen (specifically I, Br, or Cl); compound F is...

[0070]

[0071] In step S1, the synthetic route for compound B (using palladium acetate as a catalyst) is as follows:

[0072]

[0073] In some embodiments, 4,7-dibromo-5,6-dinitrobenzothiadiazole and compound A are added to a first solvent, followed by the addition of 0.01 to 1% of the first catalyst in the molar amount of compound A. The mixture is then refluxed at 80 to 120°C to carry out a Stille coupling reaction for 24 to 48 hours to obtain compound B.

[0074] In some embodiments, the first solvent includes, but is not limited to, at least one of toluene, chlorobenzene, and N,N-dimethylformamide.

[0075] In some embodiments, the first catalyst includes, but is not limited to, at least one of bis(triphenylphosphine)palladium dichloride, palladium acetate, and palladium dichloride.

[0076] In step S2, the synthetic route for compound C (using triethyl phosphite as a catalyst as an example) is as follows:

[0077]

[0078] In some embodiments, compound B and the second catalyst are added to a second solvent and refluxed at 120–200°C to carry out a condensation and ring-closing reaction for 12–48 hours to obtain compound C.

[0079] In some embodiments, the second solvent includes, but is not limited to, at least one of o-dichlorobenzene, acetonitrile, and toluene.

[0080] In some embodiments, the second catalyst includes at least one of triethyl phosphite and phosphite.

[0081] In step S3, the synthetic route for compound D is as follows:

[0082]

[0083] In some embodiments, compound C and a haloalkane are added to a third solvent, followed by the addition of a neutralizing agent, and the mixture is refluxed at 80–150°C for 12–24 hours to carry out a nucleophilic substitution reaction, yielding compound D.

[0084] In some embodiments, the third solvent includes, but is not limited to, at least one of dimethyl sulfoxide, N,N-dimethylformamide, and toluene.

[0085] In some embodiments, the neutralizing agent includes, but is not limited to, at least one of potassium hydroxide, sodium hydroxide, and sodium acetate.

[0086] In step S4, the synthetic route for compound E (taking phosphorus oxychloride as the formylation agent as an example) is as follows:

[0087]

[0088] In some embodiments, compound D and the formylation reagent are added to a fourth solvent and refluxed at 80–150°C for a Vilsmeier-Haack reaction for 8–48 hours to obtain compound E.

[0089] In some embodiments, the fourth solvent includes, but is not limited to, at least one of toluene, N,N-dimethylformamide, toluene, and chlorobenzene.

[0090] In some embodiments, the formylation agent includes, but is not limited to, at least one of phosphorus oxychloride, carboxylic acid, carboxylic acid ester, and phosphate ester.

[0091] In step S5, the synthetic route for compound F is as follows:

[0092]

[0093] In some embodiments, compound E and the first compound are added to a fifth solvent, followed by the addition of an acid-binding agent. The mixture is then refluxed at 60–100°C for a Knoevenagel reaction for 12–24 hours to obtain compound F. In this embodiment, the order of addition of the raw materials is not limited; compound E, the first compound, and the acid-binding agent can also be added to the fifth solvent before the reaction is carried out.

[0094] In some embodiments, a third catalyst (such as phosphorus oxychloride, CsPbBr3, etc.) may also be added. Specifically, compound E, the first compound, the acid-binding agent, and the third catalyst are added to a fifth solvent, refluxed at 60–100°C, and subjected to a Knoevenagel reaction for 12–24 hours to obtain compound F.

[0095] In some embodiments, the fifth solvent includes, but is not limited to, at least one of chloroform, N,N-dimethylformamide, and toluene.

[0096] In some embodiments, the first compound includes, but is not limited to, 3-(dicyanomethylene)indone.

[0097] In some embodiments, the acid-binding agent includes, but is not limited to, at least one of pyridine, sodium hydroxide, and sodium carbonate.

[0098] In some embodiments, compound E, the second compound, and pyridine are added to a fifth solvent and reacted at a preset temperature (e.g., 70°C) to obtain compound F.

[0099] In step S6, the synthetic route of the metal complex acceptor material (taking copper ions as the heavy metal ion and K2S2O8 as the catalyst as an example) is as follows:

[0100]

[0101] In this embodiment, simulation calculations reveal that the LUMO energy level of the metal complex acceptor material (compound G) is lower than that of the uncomplexed acceptor material (compound F). This indicates that compound G has a lower electron injection barrier and higher device efficiency compared to compound F. Previous DFT software simulations have shown that molecules with benzothiadiazole as the parent nucleus (such as...) Figure 1 The HOMO level of the structure shown is -10.69 eV, and its LUMO level is -9.52 eV; however, after complexation, its complex (such as...) Figure 2 The HOMO level of the structure shown is -4.55 eV, and the LUMO level is -3.00 eV. This indicates that the molecule after the metal complexation reaction can effectively match the separation and transport of holes and electrons.

[0102] In some embodiments, compound F and a heavy metal salt are added to a sixth solvent, followed by a sixth catalyst, and a complexation reaction is carried out at a temperature of 80–150°C under alkaline conditions for 48–72 hours to obtain the metal complex acceptor material.

[0103] In some embodiments, the heavy metal salt includes one of nickel salt, copper salt, manganese salt, and chromium salt.

[0104] In some embodiments, the sixth solvent includes, but is not limited to, at least one of xylene, chlorobenzene, and toluene.

[0105] In some embodiments, the sixth catalyst includes, but is not limited to, at least one of K2S2O8, PdCl2, and CsPbBr3.

[0106] This invention also provides an optoelectronic device, including a photosensitive layer, wherein the photosensitive layer includes the metal complex acceptor material described above in this invention.

[0107] In some embodiments, the optoelectronic device is a solar cell or an organic photodetector.

[0108] The following detailed description uses specific examples.

[0109] Example 1

[0110] This embodiment provides a metal complex acceptor material with the following structural formula:

[0111] Wherein, R1 is -C6H 13 Ar is R3 is -C8H 17 M is Cu, M1 is

[0112] The preparation method of the metal complex receptor material includes the following steps:

[0113] (1) Preparation of compound B:

[0114] 4,7-Dibromo-5,6-dinitrobenzothiadiazole (1 mmol, 0.38 g) and compound A (2 mmol, 1.08 g) were added to toluene (100 mL), followed by the addition of 1% equivalent palladium acetate (1% of the molar amount of compound A). The mixture was refluxed at 100 °C for 24 h to obtain compound B (0.5 g).

[0115] The synthetic route for compound B is as follows:

[0116]

[0117] (2) Preparation of compound C:

[0118] Compound B (1 mmol, 0.73 g), triethyl phosphite (0.1 mg), and o-dichlorobenzene (80 mL) were mixed and heated to 160 °C for 36 hours under argon protection to obtain compound C (0.5 g).

[0119] The synthetic route for compound C is as follows:

[0120]

[0121] (3) Preparation of compound D:

[0122] Compound C (0.662 g, 1 mmol) and NaOH aqueous solution (1 mL, concentration 10 mg / mL) were added to toluene (60 mL), and then C6H was added. 13 Br (0.5 g) was refluxed at 80 °C for 12 hours to carry out a nucleophilic substitution reaction, yielding compound D (0.7 g).

[0123] The synthetic route for compound D is as follows:

[0124]

[0125] (4) Preparation of compound E:

[0126] Compound D (1 mmol, 0.83 g) and phosphorus oxychloride (2.9 g) were added to toluene (60 mL), refluxed at 120 °C, and reacted by Vilsmeier-Haack reaction for 48 hours to obtain compound E.

[0127] The synthetic route for compound E is as follows:

[0128]

[0129] (5) Preparation of compound F:

[0130] Compound E (1 mmol, 0.886 g), (Z)-2-(2-(bromomethylene)-3-oxo-2,3-dihydro-1H-cyclopentano[b]anthracene-1-ylidene)malonitrile (2 mmol, 0.768 g), and pyridine (0.149 g) were added to N,N-dimethylformamide (50 mL), and the reaction was carried out at 70 °C for 24 hours to obtain compound F (1.1 g).

[0131] The synthetic route for compound F is as follows:

[0132]

[0133] (6) Preparation of metal complex acceptor material (G1):

[0134] Compound F (0.14 g), copper sulfate (0.2 g), and potassium persulfate (0.9 g) were added to xylene (40 mL), and the reaction was carried out at 100 °C for 48 hours to obtain the final product compound G1 (0.2 g, yield 61%).

[0135] The synthesis route for G1 is as follows:

[0136]

[0137] Example 2

[0138] This embodiment provides a metal complex acceptor material, which differs from Embodiment 1 in that:

[0139] R1 is -C8H 17 R3 is -C 10 H 21 Ar is M is Ni, M1 is

[0140] The preparation method of the metal complex receptor material includes the following steps:

[0141] (1) Preparation of compound B:

[0142] 4,7-Dibromo-5,6-dinitrobenzothiadiazole (1 mmol, 0.38 g) and compound A (2 mmol, 1.1 g) were added to toluene (100 mL), followed by the addition of palladium acetate at 1% molar amount of the compound. The mixture was refluxed at 100 °C for 24 h to obtain compound B (0.13 g).

[0143] The synthetic route for compound B is as follows:

[0144]

[0145] (2) Preparation of compound C:

[0146] Compound B (1 mmol, 0.7 g), triethyl phosphite (0.1 mL), and o-dichlorobenzene (80 mL) were mixed and heated to 120 °C for 12 hours under argon protection to obtain compound C (0.6 g).

[0147] The synthetic route for compound C is as follows:

[0148]

[0149] (3) Preparation of compound D:

[0150] Compound C (0.654 g, 1 mmol), NaOH aqueous solution (1 mL, concentration 10 mg / mL), and then C8H were added. 17 Br (0.6 g) was refluxed at 80 °C for 12 hours to carry out a nucleophilic substitution reaction, yielding compound D (0.8 g).

[0151] The synthetic route for compound D is as follows:

[0152]

[0153] (4) Preparation of compound E:

[0154] Compound D (0.8 g) and phosphorus oxychloride (2.9 g) were added to toluene (100 mL), and the mixture was refluxed at 100 °C for 24 hours to give compound E.

[0155] The synthetic route for compound E is as follows:

[0156]

[0157] (5) Preparation of compound F:

[0158] Compound E (0.9 g), 3-(dicyanomethylene)indophenone (0.5 g), pyridine (0.149 g), phosphorus oxychloride (2.1 g, as catalyst), and CsPbBr3 (0.01 g, as catalyst) were added to N,N-dimethylformamide (50 mL) and reacted at 100 °C for 12 hours using the Knoevenagel method to obtain compound F (1.2 g).

[0159] The synthetic route for compound F is as follows:

[0160]

[0161] (6) Preparation of metal complex acceptor material (G2):

[0162] Compound F (0.14 g), nickel sulfate (0.2 g), and potassium persulfate (0.9 g) were added to xylene (40 mL), and the reaction was carried out at 150 °C for 48 hours to obtain the final product compound G2 (0.3 g, yield 51%).

[0163] The synthesis route for G2 is as follows:

[0164]

[0165] Using commercially available PCE12 as the donor material, and G1 from Example 1 and G2 from Example 2 as acceptor materials, solar cells were fabricated according to the following formula: ITO / PEDOT:PSS / PCE12:G1(2) / PDINO / Al. Specific performance parameters are shown in the table below.

[0166] Table 1 Test Results

[0167]

[0168] Among them, V oc J is the open-circuit voltage. sc FF represents the short-circuit current density, FF represents the fill factor, and PCE represents the photoelectric conversion efficiency.

[0169] The PCE12 structure is as follows:

[0170] R is 2-ethylhexyl.

[0171] In summary, this invention provides a metal complex acceptor material, its preparation method, and an optoelectronic device. The non-fullerene metal complex acceptor material provided by this invention has a metal ion as its symmetry center, with electron-withdrawing groups composed of benzothiadiazoles on the top and bottom (the top and bottom are trapezoidal fused-ring structures with fused-ring benzothiadiazoles as the central core, and electron-withdrawing end groups connected to both ends of the central core). The overall structure is symmetrical, resulting in more efficient electron transport in the plane. Simultaneously, it stabilizes the electronic structure of the acceptor material, making the charge carriers in the acceptor material more stable and further increasing the stability of the acceptor material. R1 and R3 are long alkyl chains, which can increase the solubility of the acceptor material. M1 can further increase the overall conjugation of the acceptor material and improve the charge carrier transport performance. The metal complex acceptor material provided in this invention has good solubility and strong film-forming properties, and the prepared solar cell has a photoelectric conversion efficiency of nearly 18%.

[0172] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A metal complex receptor material, characterized in that, The general structural formula of the metal complex receptor material is: Wherein, M is a heavy metal ion, and R1 is a C1-C25 alkyl group; M1 is selected from one of the following groups: R2 is H or phenyl, and R2 is located at any possible position on its ring; Ar is selected from one of the following groups: R3 is a C1-C20 alkyl group; In the above structural formula ... indicates a connection point.

2. The metal complex acceptor material according to claim 1, characterized in that, The heavy metal ion is one of nickel ion, copper ion, manganese ion, and chromium ion.

3. A method for preparing a metal complex receptor material according to any one of claims 1-2, characterized in that, Including the following steps: 4,7-Dibromo-5,6-dinitrobenzothiadiazole and compound A were subjected to a Stille coupling reaction to give compound B; Compound B was subjected to a condensation and ring-closure reaction to obtain compound C; Compound C was reacted with a haloalkane via a nucleophilic substitution reaction to yield compound D; Compound D was subjected to a Vilsmeier-Haack reaction to yield compound E; Compound E and the first compound are reacted by Knoevenagel reaction, or compound E and the second compound are reacted by substitution reaction to obtain compound F; The metal complex acceptor material was obtained by complexing the compound F. Among them, compound A is Compound B is Compound C is Compound D is Compound E is The first compound is selected from one of the following structures: The second compound is selected from one of the following structures: X is a halogen; compound F is...

4. The preparation method according to claim 3, characterized in that, 4,7-Dibromo-5,6-dinitrobenzothiadiazole and compound A were added to a first solvent, followed by the addition of a first catalyst. The mixture was refluxed at 80–120 °C for 24–48 hours to carry out a Stille coupling reaction, yielding compound B.

5. The preparation method according to claim 3, characterized in that, Compound B and the second catalyst were added to the second solvent and refluxed at 120–200 °C for 12–48 hours to carry out a condensation and ring-closing reaction, yielding compound C.

6. The preparation method according to claim 3, characterized in that, Compound C and a haloalkane were added to a third solvent, followed by the addition of a neutralizing agent. The mixture was refluxed at 80–150 °C for 12–24 hours to carry out a nucleophilic substitution reaction, yielding compound D.

7. The preparation method according to claim 3, characterized in that, Compound D and the formylation reagent were added to the fourth solvent and refluxed at 80–150 °C for 8–48 hours to obtain compound E.

8. The preparation method according to claim 3, characterized in that, Compound E and the first compound were added to the fifth solvent, followed by the addition of an acid-binding agent. The mixture was refluxed at 60–100 °C for 12–24 hours to obtain compound F.

9. The preparation method according to claim 3, characterized in that, Compound F and heavy metal salts were added to the sixth solvent, followed by the sixth catalyst. The complexation reaction was carried out under alkaline conditions at a temperature of 80–150 °C for 48–72 hours to obtain the metal complex acceptor material.

10. An optoelectronic device, comprising a photosensitive layer, characterized in that, The photosensitive layer comprises the metal complex acceptor material according to any one of claims 1-2.

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