GaN HEMT single particle burning effect evaluation method

Abstract

The invention discloses a GaN HEMT (High Electron Mobility Transistor) single-particle burnout effect evaluation method, which adapts to the characteristics of various GaN HEMT devices, can evaluate the single-particle burnout effect of a GaN HEMT device for aerospace, serves for aerospace models, and solves the problem of lack of single-particle evaluation methods for aerospace inverted GaN HEMT devices.

Description

Technical Field

[0001] The invention belongs to the technical field of electronic component reliability, and in particular relates to a method for evaluating a single particle burnout effect of a GaN HEMT. Background Art

[0002] Gallium nitride high electron mobility Gallium nitride high electron mobility transistors have attracted widespread attention from scientific researchers due to their high breakdown field strength, low on-resistance, and high conversion efficiency, and are expected to be used in power electronic systems, but their high power density and high frequency characteristics pose great challenges to reliability.

[0003] As a third-generation semiconductor material, GaN has excellent material properties, such as large bandgap, high breakdown field strength, and high electron saturation drift rate. GaN HEMT is a transistor based on a heterojunction structure, which has excellent properties such as high electron mobility, high temperature resistance, high voltage resistance, strong radiation resistance, high frequency response, and low noise. It can achieve higher operating capacity with less power consumption. Its electron mobility is generally 1000cm 2 / V·s or more, the switching speed can reach more than 100ps, and the output power can reach more than 10W / mm. These excellent characteristics make GaN HEMT have significant advantages in high-frequency and high-power applications.

[0004] The typical representative of GaN microwave devices is the microwave power amplifier. Generally, microwave power amplifiers are designed as single tubes, and the DC bias circuit is used to keep the amplifier stable. The RF signal is amplified by multiples after passing through the single tube, and the DC bias provides a suitable operating point for the GaN HEMT to ensure the stability of the amplifier.

[0005] Like other devices, GaN microwave devices will also experience single particle effects under high-energy particle irradiation conditions, and in severe cases, single particle burnout can easily occur. It is of great significance to monitor and analyze the electrical performance of the device at the moment of burnout to study its radiation resistance, evaluation methods, burnout mechanism, etc. Summary of the invention

[0006] In view of this, the technical problem solved by the present invention is: to overcome the shortcomings of the prior art and propose a method for evaluating the single particle burnout effect of GaN HEMT, which can evaluate the single particle burnout effect of GaN HEMT parts for aerospace use, serve aerospace models, and solve the problem of the lack of a method for evaluating the single particle burnout effect of aerospace GaN HEMT.

[0007] A method for evaluating a single-particle burnout effect of a GaN HEMT, comprising:

[0008] Step (1) Sample preparation: Select the GaN HEMT test device;

[0009] Step (2) placing the test device in an incident ion irradiation area generated by a heavy ion accelerator;

[0010] Step (3) selecting ion energy: selecting an ion energy suitable for the device under test based on the heavy ion accelerator used and the heavy ion energy to be generated;

[0011] Step (4) setting the bias voltage: VDS voltage is 50% of the rated voltage, VGS = 0 V; VDS represents the voltage between the drain and source of the device under test; VGS represents the voltage between the gate and source of the device under test;

[0012] Step (5) ion irradiation: according to the requirements of the test plan, select appropriate ions and perform irradiation;

[0013] Step (6) Effect detection:

[0014] Step (6.1) Perform single particle burnout effect testing under ion irradiation according to the test plan requirements;

[0015] Step (6.2) monitors and records in real time whether the device has a single-particle burnout effect and the incident ion injection, injection rate, time, bias voltage and LET value;

[0016] Step (7) Calculate the total injection Φ(i) of each LET ion incident vertically on the device surface eff , plot the relationship between the single particle event cross section σ(i) and the effective LET value of the incident ion.

[0017] Preferably, the method for performing single particle burnout effect detection under ion irradiation in step (6) comprises:

[0018] Real-time monitoring of whether single-particle burnout occurs in the device under test during ion irradiation:

[0019] If it is not burned, determine whether VDS reaches the rated voltage: if it reaches the rated voltage, the test ends; if it does not reach the rated voltage, increase VDS by 10% and continue the test;

[0020] If burning occurs, reduce VDS by 10% and continue ion irradiation. If it is still in the burning state, continue to reduce VDS by 10% until burning does not occur. Record the VDS voltage value and the test is over.

[0021] Preferably, the method for determining whether the single event burnout effect occurs is: when the leakage current of the device under test exceeds a set maximum value, it is determined that the single event burnout effect occurs.

[0022] Preferably, the method of step (7) comprises: Φ(i) eff =Φ(i)×cosθ; where: Φ(i)eff is the total injection of the i-th LET ion vertically incident on the device surface, Φ(i) is the injection of the i-th LET ion, and θ is the incident angle of the ion.

[0023] Preferably, the method of step (7) includes: the single particle event cross section σ(i) = N(i) / Φ(i) at each LET eff , where: σ(i)=N(i) / Φ(i) eff is the number of single-particle events of the device under test.

[0024] Preferably, during the sample preparation in step (1), the number of test samples for a batch of products should be no less than 3, and the devices to be tested should be randomly selected from the same batch of devices that have passed the aging screening according to the device detailed specifications.

[0025] Preferably, in the ion irradiation of step (5), the injection rate is ensured to be 5000 particles / (cm 2 m) to avoid ion superposition effect or thermal effect that may lead to misjudgment of single-particle burnout effect.

[0026] Preferably, in step (1), when preparing the sample, it is ensured that the chip of the GaN HEMT sample is completely exposed to allow direct contact with ions and passes the test.

[0027] The present invention has the following beneficial effects:

[0028] The present invention proposes a method for evaluating the single particle burnout effect of GaN HEMT, which is adapted to the characteristics of various GaN HEMT devices, can evaluate the single particle burnout effect of GaN HEMT devices for aerospace use, serves aerospace models, and solves the problem of lack of a single particle evaluation method for aerospace GaN HEMT devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 The figure is a flow chart of the method of the present invention.

[0030] Figure 2 Schematic diagram of the test device of the present invention. DETAILED DESCRIPTION

[0031] The present invention is described in detail below with reference to the accompanying drawings and embodiments.

[0032] The present invention provides a method for evaluating the single particle burnout effect of GaN HEMT, such as Figure 1 As shown, the following steps are included:

[0033] (1) Sample preparation: The number of test samples for a batch of products should be no less than 3. The devices to be tested should be randomly selected from the same batch of devices that have passed the aging screening according to the device detailed specifications. Each device should be numbered and the data should be recorded according to the number.

[0034] (2) Installation and commissioning of the test equipment: Place the GaN HEMT device under test on the test mainboard, and fix the test mainboard on the irradiation bracket to ensure that the incident ions generated by the heavy ion accelerator irradiate the sensitive area of ​​the device under test. Adjust the angle between the sample and the beam to meet the requirements of the test plan. Check that the communication and function of the test board and the single particle effect detection system are normal; the single particle effect detection system includes a power supply, an oscilloscope, and a host computer to monitor device parameters.

[0035] (3) Selecting ion energy: Selecting an ion energy suitable for the sample based on the heavy ion accelerator used and the heavy ion energy to be generated;

[0036] (4) Set the bias voltage: 50% of the rated voltage of VDS, VGS = 0V; VDS represents the voltage between the drain and source of the device under test; VGS represents the voltage between the gate and source of the device under test. The principle to be followed in selecting the bias voltage is:

[0037] (4.1) The starting voltage is set to 50% of the rated voltage of VDS, VGS = 0V, which can effectively improve the evaluation efficiency and reduce the evaluation time;

[0038] (4.2) Determine whether a single-particle burnout effect occurs, and increase or decrease the voltage value by 10% of VDS as a step until the VDS rated voltage of the GaN HEMT or 0V is reached, and then carry out the heavy ion single-particle burnout effect evaluation, specifically:

[0039] Real-time monitoring of whether single-particle burnout occurs in the device under test during ion irradiation:

[0040] If it is not burned, determine whether VDS reaches the rated voltage: if it reaches the rated voltage, the test ends; if it does not reach the rated voltage, increase VDS by 10% and continue the test;

[0041] If burning occurs, reduce VDS by 10% and continue ion irradiation. If it is still in the burning state, continue to reduce VDS by 10% until burning does not occur. Record the VDS voltage value and the test is over.

[0042] (5) Ion irradiation: According to the test plan, select appropriate ions and carry out irradiation. During ion irradiation, the injection rate should be kept below 5000 as much as possible to avoid the occurrence of ion superposition effect or thermal effect that may lead to misjudgment of single particle burn effect.

[0043] (6) Effect detection:

[0044] (6.1) Conduct single particle burnout effect testing under ion irradiation according to the test plan requirements;

[0045] (6.2) Monitor and record in real time whether the device has a single-event burnout effect, as well as the incident ion flux, flux rate, time, bias voltage, and LET value;

[0046] (7) Calculate the total injection Φ(i) of each LET ion incident vertically on the device surface eff , plot the relationship between the single particle event cross section σ(i) and the effective LET value of the incident ion.

[0047] The principles of effect detection are as follows:

[0048] When the leakage current exceeds the maximum value specified in the manual or detailed specifications, it is judged that a single-event burnout effect occurs.

[0049] Φ(i) eff =Φ(i)×cosθ

[0050] Where: Φ(i) eff is the total injection of the i-th LET ion vertically incident on the device surface, Φ(i) is the injection of the i-th LET ion, and θ is the incident angle of the ion.

[0051] The single-particle event cross section under each LET is σ(i) = N(i) / Φ(i) eff , where: σ(i)=N(i) / Φ(i) eff is the number of single-particle events of the measurement device.

[0052] For the GaN HEMT samples, the chips were completely exposed to allow direct contact with ions and passed the test.

[0053] Example:

[0054] (1) Sample preparation:

[0055] 1) The number of test samples of a batch of products is 3. The devices passed the test. The device numbers are 95A-2#, 100-1#, and 20B-1#.

[0056] (2) Installation and debugging of the test device: Fix the test board and detector on the irradiation bracket to ensure the consistency of the movement of the test device and the test bracket. Ensure that the incident ions irradiate the sensitive area of ​​the device under test. Adjust the angle between the sample and the beam to meet the requirements of the test plan. Check that the communication between the test board and the single-particle effect detection system is normal and the functions are normal.

[0057] (3) Selection of ion energy: The Heavy Ion Accelerator Lanzhou (HIRFL) of the Institute of Modern Physics, Chinese Academy of Sciences was selected, with a heavy ion energy of 1912.1 (MeV).

[0058] (4) Calculate the effective LET value and range: The LET value of ions in silicon is 76.3 MeV cm2 / mg, and the range in silicon is 111.3μm.

[0059] (5) Ion irradiation: Ta particle source, LET value is 76.3 MeV·cm 2 / mg, range 94.1um in Si, incident angle 0°, ion beam perpendicular to the device surface, injection rate 5000 particles / (cm 2 m), total injection volume 10 7 / cm 2 .

[0060] (6) Effect detection: Single-particle burnout of the device was detected. Single-particle burnout occurred in 95A-2# at VDS=300V, VGS=0V.

[0061] The present invention proposes a method for evaluating the single particle burnout effect of GaN HEMT, which is adapted to the characteristics of various GaN HEMT devices, can evaluate the single particle burnout effect of GaN HEMT devices for aerospace use, serves aerospace models, and solves the problem of lack of a single particle evaluation method for aerospace GaN HEMT devices.

[0062] In summary, the above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for evaluating the single particle burnout effect of GaN HEMT, characterized in that: include: Step (1) Sample preparation: Select the GaN HEMT test device; Step (2) placing the test device in an incident ion irradiation area generated by a heavy ion accelerator; Step (3) selecting ion energy: selecting an ion energy suitable for the device under test based on the heavy ion accelerator used and the heavy ion energy to be generated; Step (4) setting the bias voltage: VDS voltage is 50% of the rated voltage, VGS = 0 V; VDS represents the voltage between the drain and source of the device under test; VGS represents the voltage between the gate and source of the device under test; Step (5) ion irradiation: according to the requirements of the test plan, select appropriate ions and perform irradiation; Step (6) Effect detection: Step (6.1) Perform single particle burnout effect testing under ion irradiation according to the test plan requirements; Step (6.2) monitors and records in real time whether the device has a single-particle burnout effect and the incident ion injection, injection rate, time, bias voltage and LET value; Step (7) Calculate the total injection Φ(i) of each LET ion incident vertically on the device surface eff , plot the relationship between the single particle event cross section σ(i) and the effective LET value of the incident ion.

2. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: The method for performing single particle burnout effect detection under ion irradiation in step (6) comprises: Real-time monitoring of whether single-particle burnout occurs in the device under test during ion irradiation: If it is not burned, determine whether VDS reaches the rated voltage: if it reaches the rated voltage, the test ends; if it does not reach the rated voltage, increase VDS by 10% and continue the test; If burning occurs, reduce VDS by 10% and continue ion irradiation. If it is still in the burning state, continue to reduce VDS by 10% until burning does not occur. Record the VDS voltage value and the test is over.

3. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: The method for judging whether the single-particle burnout effect occurs is as follows: when the leakage current of the device under test exceeds the set maximum value, it is judged that the single-particle burnout effect occurs.

4. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: The method of step (7) comprises: Φ(i) eff =Φ(i)×cosθ; where: Φ(i) eff is the total injection of the i-th LET ion vertically incident on the device surface, Φ(i) is the injection of the i-th LET ion, and θ is the incident angle of the ion.

5. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 4, characterized in that: The method of step (7) includes: the single particle event cross section σ(i) = N(i) / Φ(i) at each LET eff , where: σ(i)=N(i) / Φ(i) eff is the number of single-particle events of the device under test.

6. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: When preparing samples in step (1), the number of test samples for a batch of products should be no less than 3, and the devices to be tested should be randomly selected from the same batch of devices that have passed the aging screening according to the device detailed specifications.

7. A method for evaluating a single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: In step (5), the ion irradiation rate is ensured to be 5000 particles / (cm 2 m) to avoid ion superposition effect or thermal effect that may lead to misjudgment of single-particle burnout effect.

8. A method for evaluating the single-particle burnout effect of a GaN HEMT as claimed in claim 1, characterized in that: In step (1), when preparing the sample, ensure that the chip of the GaN HEMT sample is completely exposed to allow direct contact with ions and passes the test.

Images