Hierarchical Testing Method for Three-Dimensional Stacked Memories

Abstract

The present invention discloses a hierarchical testing method for three-dimensional stacked memories, which relates to the technical field of memory testing. Initialize each memory layer where the three-dimensional stacked memory is located. According to the structural type of the memory layer, formulate a hierarchical testing mode for the current three-dimensional stacked memory, and test each memory layer of the three-dimensional stacked memory. If a storage anomaly is detected in a certain memory layer, mark it as a memory layer to be inspected in detail, record its storage location and storage type, and perform a global test on the memory layer to be inspected in detail. If no storage anomaly is detected in all memory layers, end the test. According to the test results of the global test, locate all abnormal storage domains of the corresponding memory layer of the three-dimensional stacked memory, and perform diagnosis and repair, thereby converting the abnormal storage domains into normal storage domains.

Description

Technical Field

[0001] The present invention relates to the technical field of memory testing, and specifically to a hierarchical testing method for three-dimensional stacked memories. Background Art

[0002] Existing three-dimensional stacked memory technologies have been widely applied in many fields due to their high density and efficient storage capabilities. However, due to the complexity of the three-dimensional stacked memory structure, effective testing and fault diagnosis of it have become a technical challenge. In existing technologies, the testing of memories is usually carried out based on the entire memory rather than for each independent storage layer. When a storage anomaly is detected by this method, it is often difficult to accurately locate the specific storage layer or storage cell, resulting in a complex and inefficient repair and optimization process. Summary of the Invention

[0003] In order to solve the above problems, the purpose of the present invention is to provide a hierarchical testing method for three-dimensional stacked memories.

[0004] The purpose of the present invention can be achieved through the following technical solutions: A hierarchical testing method for three-dimensional stacked memories, comprising the following steps:

[0005] Step S1: Perform an initialization operation on each storage layer of the three-dimensional stacked memory. According to the structural type of the storage layer, formulate a hierarchical testing mode for the current three-dimensional stacked memory, and test each storage layer of the three-dimensional stacked memory according to the hierarchical testing mode;

[0006] Step S2: If a storage anomaly is detected in a certain storage layer of the three-dimensional stacked memory, mark the corresponding storage layer as the storage layer to be inspected in detail, record the storage location and storage type of the storage layer to be inspected in detail, and perform a global test on the storage layer to be inspected in detail; if no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, end the test;

[0007] Step S3: According to the test results of the global test, locate all abnormal storage domains of the corresponding storage layer of the three-dimensional stacked memory, diagnose and repair the abnormal storage domains, and then convert the abnormal storage domains into normal storage domains.

[0008] Further, the process of performing an initialization operation on each storage layer of the three-dimensional stacked memory includes:

[0009] The three-dimensional stacked memory is composed of a first storage layer, a second storage layer, and a third storage layer. Perform an initialization operation on each storage layer in turn. The initialization operation includes configuring the test parameters corresponding to each storage layer, including setting the threshold voltage corresponding to each storage layer, including performing a hardware reset on each storage layer, and also including performing an appearance inspection on each storage layer;

[0010] The test parameters for the storage layer configuration include test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code;

[0011] When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and no defects affecting the storage structure are found after the appearance inspection of each storage layer, the initialization operation of the current three-dimensional stacked memory is successfully completed; otherwise, the initialization operation fails.

[0012] Furthermore, according to the structural type of the storage layer, a hierarchical test mode for the current three-dimensional stacked memory is formulated, and the process of testing each storage layer of the three-dimensional stacked memory according to the hierarchical test mode includes:

[0013] Analyze the component structure distributions of the first storage layer, the second storage layer, and the third storage layer in the three-dimensional stacked memory in sequence, and then determine whether there are storage layers of the same structural type, and select the corresponding hierarchical test mode for the storage layers of the current three-dimensional stacked memory according to the judgment result;

[0014] The hierarchical test mode includes a parallel test mode and an independent test mode;

[0015] If there are storage layers of the same structural type in the three-dimensional stacked memory, mark the storage layers of the same structural type as the same category of storage layers; if there are no storage layers of the same structural type in the three-dimensional stacked memory, mark all the storage layers of the current three-dimensional stacked memory as different category of storage layers;

[0016] The hierarchical test mode selected for the same category of storage layers is the parallel test mode;

[0017] The hierarchical test mode selected for the different category of storage layers is the independent test mode;

[0018] After the corresponding hierarchical test mode is selected for each storage layer of the three-dimensional stacked memory, test each storage layer of the three-dimensional stacked memory according to the hierarchical test mode of each storage layer and the test parameters corresponding to the initialization operation.

[0019] Furthermore, the parallel test mode synchronously tests multiple storage layers in the three-dimensional stacked memory, and the test results of the storage layer located in the upper layer in terms of structure are used to guide the test of the storage layer located in the lower layer in terms of structure. The independent test mode tests each storage layer in the three-dimensional stacked memory separately in sequence. After the test of the first storage layer is completed, start the test of the second storage layer. After the test of the second storage layer is completed, start the test of the third storage layer.

[0020] Further, if a storage anomaly is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as the storage layer to be inspected in detail, the storage location and storage type of the storage layer to be inspected in detail are recorded, and the process of performing a global test on the storage layer to be inspected in detail includes:

[0021] According to the parallel test mode or the independent test mode, each storage layer where the three-dimensional stacked memory is located is tested. The types of tests include data readout, data writing, and data erasure. When the first storage block that cannot normally perform data readout, data writing, or data erasure is detected in a certain storage layer, a repair operation is performed on the corresponding storage block according to the error correction code;

[0022] If the repair is successful, continue to test the next storage block in the current storage layer until all the storage blocks in all storage layers are tested; if the repair fails, mark the current storage block as a bad block through the bad block recording code. When no bad block appears after all storage layers in the three-dimensional stacked memory are tested, end this test;

[0023] If a bad block appears in a certain storage layer of the three-dimensional stacked memory, the test result is that there is a storage anomaly in the current storage layer. The corresponding storage layer is marked as the storage layer to be inspected in detail, the storage location of the storage layer to be inspected in detail in the three-dimensional stacked memory is recorded, and the storage type of the data stored corresponding to the storage layer to be inspected in detail; a global test is performed on all storage layers to be inspected in detail.

[0024] Further, the process of the global test includes:

[0025] For several storage blocks included in each storage layer to be inspected in detail, all the bad blocks among them are located, and each bad block in the storage layer to be inspected in detail is sequentially subjected to a functional test, a performance test, and an error injection test; thereby obtaining the specific abnormal storage type in each bad block. The abnormal storage types include functional anomaly, performance anomaly, and correction processing anomaly;

[0026] Record the position coordinates of each bad block in the storage layer to be inspected in detail, and record the abnormal storage type of each bad block. When all the bad blocks in a storage layer to be inspected in detail are tested, end the global test of the current storage layer to be inspected in detail. When all the bad blocks included in all the storage layers to be inspected in detail in the three-dimensional stacked memory are tested, end the final global test of the three-dimensional stacked memory.

[0027] Further, according to the test results of the global test, the process of locating all the abnormal storage domains of the corresponding storage layer of the three-dimensional stacked memory includes:

[0028] Obtain the test results of the three-dimensional stacked memory for global testing. The test results are the position coordinates of the bad blocks in each memory layer, and the abnormal storage types corresponding to each bad block. Integrate the areas corresponding to the bad blocks with adjacent position coordinates in each memory layer of the three-dimensional stacked memory as the abnormal storage domains. If there are no bad blocks with adjacent position coordinates in the memory layer, then take the area of the corresponding bad block alone as the abnormal storage domain, thereby locating all the abnormal storage domains in each memory layer of the three-dimensional stacked memory.

[0029] Further, the process of diagnosing and repairing the abnormal storage domain and then converting the abnormal storage domain into a normal storage domain includes:

[0030] In each memory layer of the three-dimensional stacked memory, obtain the domain area of each located abnormal storage domain, and set the processing priorities of the abnormal storage domains corresponding to each domain area from high to low in the order of the domain area from large to small;

[0031] Arrange relevant professionals to overhaul the three-dimensional stacked memory, and diagnose and repair each abnormal storage domain in the three-dimensional stacked memory in the order of the set processing priorities of the abnormal storage domains, thereby converting all the abnormal storage domains in the three-dimensional stacked memory into the corresponding normal storage domains.

[0032] Compared with the prior art, the beneficial effects of the present invention are: By initializing and performing layered testing on each memory layer, it is possible to accurately mark and locate the memory layers with preliminary storage anomalies, which improves the accuracy of fault diagnosis to a certain extent; Adopting a layered testing mode can quickly perform global testing when storage anomalies are detected, avoiding unnecessary comprehensive testing in traditional methods and saving testing time and resources. By recording the storage positions and types of the memory layers to be inspected in detail, it enables maintenance personnel to quickly identify and process abnormal storage domains, improving the maintenance efficiency. Brief Description of the Drawings

[0033] Figure 1 It is a flowchart of the present invention. Detailed Embodiment

[0034] As Figure 1 shown, the layered testing method for a three-dimensional stacked memory includes the following steps:

[0035] Step S1: Perform an initialization operation on each memory layer where the three-dimensional stacked memory is located, formulate a layered testing mode for the current three-dimensional stacked memory according to the structural type of the memory layer, and test each memory layer of the three-dimensional stacked memory according to the layered testing mode;

[0036] Step S2: If a storage anomaly is detected in a certain storage layer of the three-dimensional stacked memory, mark the corresponding storage layer as the storage layer to be inspected in detail, record the storage location and storage type of the storage layer to be inspected in detail, and perform a global test on the storage layer to be inspected in detail; if no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, end the test;

[0037] Step S3: According to the test results of the global test, locate all abnormal storage domains of the corresponding storage layer of the three-dimensional stacked memory, diagnose and repair the abnormal storage domains, and then convert the abnormal storage domains into normal storage domains.

[0038] It should be further noted that in the specific implementation process, the process of initializing each storage layer where the three-dimensional stacked memory is located includes:

[0039] The three-dimensional stacked memory is composed of a first storage layer, a second storage layer, and a third storage layer. Among them, the first storage layer is connected to the second storage layer, and the second storage layer is connected to the third storage layer. Starting from the first storage layer and ending at the third storage layer, initialize each storage layer in sequence;

[0040] The initialization operation includes configuring the test parameters corresponding to each storage layer, including setting the threshold voltage corresponding to each storage layer, including performing a hardware reset on each storage layer, and also including performing an appearance inspection on each storage layer;

[0041] The test parameters configured for the storage layer include the test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code;

[0042] The threshold voltage corresponding to each storage layer is the interval voltage that maintains the stored data for a normal storage period when storing data by itself. The interval voltage includes the voltage upper limit threshold and the voltage lower limit threshold. When the storage voltage of the storage layer is within the interval voltage, it means that the current storage layer is in a normal working state; otherwise, the current storage layer is in an abnormal working state;

[0043] When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and no defects affecting the storage structure are found after the appearance inspection of each storage layer, the initialization operation of the current three-dimensional stacked memory is successfully completed; otherwise, the initialization operation fails;

[0044] The test duration is the time overhead required for each memory layer in the three-dimensional stacked memory to be tested separately. The data read operation code is used for reading data from each memory layer, the data write operation code is used for writing data to each memory layer, the data erase operation code is used for erasing data from each memory layer, and the error correction code is used to attempt corresponding repair operations when the data read, data write, or data erase of a certain memory layer cannot be carried out normally;

[0045] Each memory layer consists of several memory blocks. When testing a certain memory layer, it is to test several memory blocks under a certain memory layer. When a memory block has a storage anomaly and cannot be repaired, it is marked by the bad block record code.

[0046] It should be further noted that in the specific implementation process, according to the structural type of the memory layer, a hierarchical test mode for the current three-dimensional stacked memory is formulated, and the process of testing each memory layer of the three-dimensional stacked memory according to the hierarchical test mode includes:

[0047] Analyze the component structure distribution of the first memory layer, the second memory layer, and the third memory layer in the three-dimensional stacked memory in sequence, and then judge whether there are memory layers of the same structural type, and select a corresponding hierarchical test mode for the memory layers of the current three-dimensional stacked memory according to the judgment result;

[0048] The hierarchical test mode includes a parallel test mode and an independent test mode;

[0049] If there are memory layers of the same structural type in the three-dimensional stacked memory, the memory layers of the same structural type are marked as the same category of memory layers. If there are no memory layers of the same structural type in the three-dimensional stacked memory, all the memory layers of the current three-dimensional stacked memory are marked as different category of memory layers;

[0050] The hierarchical test mode selected for the same category of memory layers is the parallel test mode;

[0051] The hierarchical test mode selected for the different category of memory layers is the independent test mode;

[0052] After the corresponding hierarchical test mode is selected for each memory layer of the three-dimensional stacked memory, each memory layer of the three-dimensional stacked memory is tested according to the hierarchical test mode of each memory layer and the test parameters corresponding to the initialization operation.

[0053] Among them, the number of memory layers in the three-dimensional stacked memory under the parallel test mode is denoted as Number, and the value of Number is 2 and 3;

[0054] When Number = 2, a test start interval is set for the two memory layers in the parallel test mode, and the test of the upper memory layer is preferentially started. The timing is synchronized. After the timing duration reaches the test start interval, the test of the other memory layer in the parallel test mode is started;

[0055] When Number = 3, the test time difference between the first memory layer and the second memory layer is set, and the test time difference between the second memory layer and the third memory layer is set. The tests of the first memory layer, the second memory layer, and the third memory layer are sequentially started according to the order from the upper layer to the lower layer and the test duration;

[0056] The parallel test mode is carried out by constructing a parallel test script. The parallel test script preferentially tests the upper memory layer in the three-dimensional stacked memory, records the test operation instructions of the current test, and feeds the test operation instructions back to other memory layers in the same parallel test mode. Other memory layers complete the test of their own memory layers according to the test operation instructions;

[0057] That is, the parallel test mode not only synchronizes the tests of multiple memory layers in the three-dimensional stacked memory, but also the test results of the upper memory layer in terms of structure can be used to guide the test of the lower memory layer in terms of structure;

[0058] The independent test mode is to test each memory layer in the three-dimensional stacked memory separately. After the test of the first memory layer is completed, the test of the second memory layer is started. Similarly, after the test of the second memory layer is completed, the test of the third memory layer is started.

[0059] It should be further noted that in the specific implementation process, if a storage anomaly is detected in a certain memory layer of the three-dimensional stacked memory, the corresponding memory layer is marked as the memory layer to be inspected in detail, the storage location and storage type of the memory layer to be inspected in detail are recorded, and the process of the global test of the memory layer to be inspected in detail includes:

[0060] According to the parallel test mode or the independent test mode, each memory layer where the three-dimensional stacked memory is located is tested. The test types include data reading, data writing, and data erasing. When testing each memory layer, data reading, data writing, and data erasing are sequentially performed on several memory blocks included in each memory layer;

[0061] When the first memory block in a certain memory layer that cannot read, write, or erase data normally is detected, perform a repair operation on the corresponding memory block according to the error correction code. If the repair is successful, continue to test the next memory block in the current memory layer until all memory blocks in all memory layers are tested; if the repair fails, mark the current memory block as a bad block through the bad block record code;

[0062] When all memory layers in the three-dimensional stacked memory have been tested and no bad blocks have appeared, end this test;

[0063] If a bad block appears in a certain memory layer of the three-dimensional stacked memory, the detection result is that there is a storage anomaly in the current memory layer. Mark the corresponding memory layer as a memory layer to be inspected in detail, record the storage location of the memory layer to be inspected in detail in the three-dimensional stacked memory, and the storage type of the data stored corresponding to the memory layer to be inspected in detail;

[0064] Perform a global test on all memory layers to be inspected in detail. The content of the global test is as follows:

[0065] For several memory blocks included in each memory layer to be inspected in detail, locate all the bad blocks among them, and perform functional tests, performance tests, and error injection tests on each bad block in the memory layer to be inspected in detail in turn;

[0066] Furthermore, obtain the specific abnormal storage types in each bad block. The abnormal storage types include functional anomalies, performance anomalies, and correction processing anomalies. Among them, when the functional test of the memory block fails, the memory block is in a functional anomaly; when the performance test of the memory block fails, the memory block is in a performance anomaly; when the error injection test of the memory block fails, the memory block is in a correction processing anomaly;

[0067] Record the position coordinates of each bad block in the memory layer to be inspected in detail, and record the abnormal storage type of each bad block. When all the bad blocks in a memory layer to be inspected in detail have been tested, end the global test of the current memory layer to be inspected in detail. When all the bad blocks included in all the memory layers to be inspected in detail in the three-dimensional stacked memory have been tested, end the final global test of the three-dimensional stacked memory.

[0068] It should be further noted that in the specific implementation process, the process of locating all abnormal storage domains of the corresponding memory layer of the three-dimensional stacked memory according to the test results of the global test includes:

[0069] Obtain the test results of the three-dimensional stacked memory for global testing. The test results are the position coordinates of the bad blocks in each memory layer and the abnormal storage types corresponding to each bad block. Integrate the areas corresponding to the bad blocks with adjacent position coordinates in each memory layer of the three-dimensional stacked memory as the abnormal storage domains. If there are no bad blocks with adjacent position coordinates in the memory layer, take the area of the corresponding bad block alone as the abnormal storage domain, thereby locating all the abnormal storage domains in each memory layer of the three-dimensional stacked memory.

[0070] It should be further noted that, in the specific implementation process, the process of diagnosing and repairing the abnormal storage domains and then converting the abnormal storage domains into normal storage domains includes:

[0071] In each memory layer of the three-dimensional stacked memory, obtain the domain area of each located abnormal storage domain, and set the processing priorities of the abnormal storage domains corresponding to each domain area from high to low in the order of the domain area from large to small;

[0072] Arrange relevant professionals to overhaul the three-dimensional stacked memory, and diagnose and repair each abnormal storage domain in the three-dimensional stacked memory in the order of the set processing priorities of the abnormal storage domains, thereby converting all the abnormal storage domains in the three-dimensional stacked memory into the corresponding normal storage domains to complete the final overhaul of the three-dimensional stacked memory.

[0073] The above embodiments are only used to illustrate the technical method of the present invention and not to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the technical method of the present invention can be modified or equivalently replaced without departing from the spirit and scope of the technical method of the present invention.

Claims

1. A layered testing method for a three-dimensional stacked memory, characterized in that: The following steps are involved: Step S1: performing an initialization operation on each storage layer of the three-dimensional stacked memory, formulating a layered test mode of the current three-dimensional stacked memory according to the structure type of the storage layer, and testing each storage layer of the three-dimensional stacked memory according to the layered test mode; Step S2: if a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected in detail, the storage position and storage type of the storage layer to be inspected in detail are recorded, and a full-domain test of the storage layer to be inspected is performed; If no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, the test is terminated; Step S3: according to the test result of the global test, all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory are located, and the abnormal storage boundaries are diagnosed and repaired, and then the abnormal storage boundaries are converted into normal storage boundaries; The process of initializing each storage layer of the three-dimensional stacked memory includes: The three-dimensional stacked memory is composed of a first storage layer, a second storage layer and a third storage layer, and each storage layer is initialized in turn, wherein the initialization operation includes configuring test parameters corresponding to each storage layer, setting a threshold voltage corresponding to each storage layer, performing a hardware reset on each storage layer, and performing an appearance inspection on each storage layer; The test parameters configured for the storage layer include test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code; When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and each storage layer is not found to have defects that affect the storage structure after the appearance inspection, the initialization operation of the current three-dimensional stacked memory is successfully completed, otherwise, the initialization operation fails; According to the structural type of the storage layer, a layered test mode of the current three-dimensional stacked memory is formulated, and a process of testing each storage layer of the three-dimensional stacked memory according to the layered test mode includes: Analyze the component structure distribution of the first storage layer, the second storage layer, and the third storage layer in the three-dimensional stacked memory in turn, and then determine whether there are storage layers of the same structural type, and select a corresponding layered test mode for the storage layer of the current three-dimensional stacked memory according to the determination result; Hierarchical test modes include parallel test mode and independent test mode; If there are storage layers of the same structural type in the three-dimensional stacked memory, the storage layers of the same structural type are marked as storage layers of the same category; if there are no storage layers of the same structural type in the three-dimensional stacked memory, all storage layers of the current three-dimensional stacked memory are marked as storage layers of different categories; The hierarchical test mode selected for storage layers of the same category is the parallel test mode; The tiered test mode selected for the heterogeneous storage tiers is the independent test mode; After each storage layer of the three-dimensional stacked memory has completed its corresponding layered test mode, each storage layer of the three-dimensional stacked memory is tested according to the layered test mode of each storage layer and the test parameters corresponding to the initialization operation; The parallel test mode synchronously tests multiple storage layers in the three-dimensional stacked memory, and the test results of the storage layer in the upper layer are used to guide the test of the storage layer in the lower layer. The independent test mode tests each storage layer in the three-dimensional stacked memory in turn. When the test of the first storage layer is completed, the test of the second storage layer is started. After the test of the second storage layer is completed, the test of the third storage layer is started.

2. The layered testing method of the three-dimensional stacked memory according to claim 1, characterized in that: If a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected, the storage location and storage type of the storage layer to be inspected are recorded, and a full-domain test of the storage layer to be inspected is performed. The process includes: According to a parallel test mode or an independent test mode, each storage layer where the three-dimensional stacked memory is located is tested, and the types of tests include data reading, data writing and data erasing. When the first storage block in a storage layer that cannot normally read data, write data or erase data is detected, a repair operation is performed on the corresponding storage block according to an error correction code; If the repair is successful, the next storage block in the current storage layer will continue to be tested until the storage blocks of all storage layers are tested; if the repair fails, the current storage block will be marked as a bad block through the bad block record code. When all storage layers in the three-dimensional stacked memory have been tested and no bad blocks are found, the test will end; If a bad block appears in a certain storage layer of the three-dimensional stacked memory, the detection result is that a storage abnormality occurs in the current storage layer. The corresponding storage layer is marked as a storage layer to be inspected in detail, and the storage position of the storage layer to be inspected in detail in the three-dimensional stacked memory and the storage type of the data stored in the storage layer to be inspected are recorded; a full-domain test is performed on all storage layers to be inspected in detail.

3. The layered testing method of the three-dimensional stacked memory according to claim 2, characterized in that: The process of full-domain testing includes: For each storage block included in the storage layer to be inspected, all bad blocks are located, and each bad block in the storage layer to be inspected is tested for functionality, performance, and error injection in turn; and then the specific abnormal storage type in each bad block is obtained, and the abnormal storage type includes functional abnormality, performance abnormality, and correction processing abnormality; Record the location coordinates of each bad block in the storage layer to be inspected, and record the abnormal storage type of each bad block. When all the bad blocks in a storage layer to be inspected have been tested, end the global test of the current storage layer to be inspected. When all the bad blocks included in all storage layers to be inspected in the three-dimensional stacked memory have been tested, end the final global test of the three-dimensional stacked memory.

4. The layered testing method of the three-dimensional stacked memory according to claim 3, characterized in that: According to the test results of the global test, the process of locating all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory includes: The test results of the full-domain test of the three-dimensional stacked memory are obtained. The test results are the position coordinates of the bad blocks in each storage layer, and the abnormal storage type corresponding to each bad block. The areas corresponding to the bad blocks with adjacent position coordinates in each storage layer of the three-dimensional stacked memory are integrated as abnormal storage boundaries. If there are no bad blocks with adjacent position coordinates in the storage layer, the area of ​​the corresponding bad block is used separately as the abnormal storage boundary, thereby locating all the abnormal storage boundaries in each storage layer of the three-dimensional stacked memory.

5. The layered testing method of the three-dimensional stacked memory according to claim 4, characterized in that: The process of diagnosing and repairing the abnormal storage boundary and converting the abnormal storage boundary into a normal storage boundary includes: In each storage layer of the three-dimensional stacked memory, the boundary area of ​​each located abnormal storage boundary is obtained, and the processing priority of each abnormal storage boundary corresponding to the boundary area is set in descending order according to the boundary area from large to small; Arrange relevant professionals to inspect and repair the three-dimensional stacked memory, and diagnose and repair each abnormal storage boundary in the three-dimensional stacked memory in turn according to the order of processing priority set for the abnormal storage boundary, and then convert all abnormal storage boundaries in the three-dimensional stacked memory into corresponding normal storage boundaries.

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