Surface treatment management method and system for silicon wafer production
The silicon wafer surface treatment management method and system generate tailored heating schemes for consistent SiO2 film density and thickness, addressing inconsistencies in existing methods and reducing product failures.
Patent Information
- Application Number
- CN202411801516.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2025-03-18
AI Technical Summary
In silicon wafer production, existing surface treatment methods using SiO2 thin films result in inconsistent film density due to variations in process, environment, and conditions, leading to thickness reduction during HF cleaning, potentially causing product failure.
A surface treatment management method and system that involves data-driven generation of tailored heating schemes for silicon wafers, including temperature and duration, with real-time monitoring and adjustment to ensure consistent film density and thickness, using a system with communication modules, processing modules, and storage for generating and executing surface treatment plans.
This approach ensures consistent SiO2 film density and thickness post-treatment, reducing product failure rates and enhancing production efficiency by addressing inconsistencies in existing methods.
Smart Images
Figure CN119650413A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, specifically to the field of silicon wafer production technology, and in particular to a surface treatment management method and system for silicon wafer production. Background Art
[0002] In the semiconductor silicon wafer process, the conventional method of surface treatment of silicon wafers generally uses SiO2 thin film vapor deposition to achieve uniform coverage of the surface of the silicon wafer. However, due to the inconsistency of the process, environment, conditions, etc., the sparseness of the SiO2 film surface is also different, which results in the same thickness of the SiO2 film surface decreasing in thickness to varying degrees after dilution and HF cleaning, and even leads to product scrapping.
[0003] Accordingly, the art needs a new surface treatment management solution for silicon wafer production to solve the above problems. Summary of the invention
[0004] One purpose of the present application is to provide a surface treatment management method and system for silicon wafer production, at least to solve the technical problem that the surface treatment method of silicon wafers in the prior art results in different sparseness of SiO2 film surface due to inconsistencies in process, environment, conditions, etc., which in turn causes SiO2 film surface of the same thickness to decrease in thickness to varying degrees after dilution and HF cleaning, and even leads to product scrapping.
[0005] To achieve the above objectives, some embodiments of the present application provide the following aspects:
[0006] In a first aspect, some embodiments of the present application further provide a surface treatment management method for silicon wafer production, the method comprising the following steps:
[0007] Acquire silicon wafer data of the silicon wafer to be processed, wherein the silicon wafer data includes the silicon wafer size of the silicon wafer to be processed and the film thickness of the film covered on the silicon wafer to be processed;
[0008] Substituting the silicon wafer data into the surface treatment management module, generating a surface treatment plan matching the silicon wafer data and sending it to the heating device, wherein the surface treatment plan at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating time;
[0009] In response to the heating device executing the surface treatment scheme, acquiring surface data of the silicon wafer being treated in real time;
[0010] The surface data of the silicon wafer being processed is substituted into the surface treatment management module, and a surface treatment adjustment scheme corresponding to the surface treatment scheme is selectively generated, or a protection treatment scheme for the silicon wafer being processed is generated.
[0011] Further, the step of substituting the surface data of the silicon wafer being processed into the surface treatment management module and selectively generating a surface treatment adjustment scheme corresponding to the surface treatment scheme, or generating a protection treatment scheme for the silicon wafer being processed includes:
[0012] Determining the coverage and compactness of the thin film covering the silicon wafer being processed based on the surface data of the silicon wafer being processed;
[0013] Based on the coverage and compactness of the thin film covering the silicon wafer being processed, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
[0014] Furthermore, the step of substituting the silicon wafer data into the surface treatment management module, generating a surface treatment solution matching the silicon wafer data and sending the solution to the heating device comprises:
[0015] Based on the silicon wafer data, generating multiple groups of heating schemes, wherein each group of heating schemes at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating duration;
[0016] A plurality of groups of heating schemes are screened, and a group of heating schemes is selected as a surface treatment scheme matching the silicon wafer data and sent to a heating device.
[0017] Further, the generating multiple groups of heating schemes based on the silicon wafer data includes:
[0018] Based on the silicon wafer size in the silicon wafer data, determining a heating temperature range and a heating time range that match the silicon wafer size;
[0019] Based on the film thickness in the silicon wafer data, the heating temperature range and the heating time range that match the silicon wafer size are limited to obtain the heating temperature limit range and the heating time limit range that match the silicon wafer data;
[0020] Based on the heating temperature limit range and the heating time limit range that match the silicon wafer data, multiple groups of heating plans are generated.
[0021] Furthermore, the step of screening multiple groups of heating schemes, selecting a group of heating schemes as a surface treatment scheme matching the silicon wafer data and sending the group of heating schemes to the heating device comprises:
[0022] Simulating and implementing multiple groups of heating schemes to obtain simulation data of each group of heating schemes, wherein the simulation data at least includes surface data of the silicon wafer after the heating treatment;
[0023] Determine the treatment result score corresponding to each group of heating schemes based on the simulation data of each group of heating schemes;
[0024] A set of heating schemes with the highest processing result scores are selected as surface processing schemes matching the silicon wafer data and sent to the heating device.
[0025] Further, the surface treatment scheme is selectively adjusted based on the coverage and compactness of the thin film covering the silicon wafer being processed to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed, including:
[0026] Obtaining the current heating treatment time of the silicon wafer being processed;
[0027] Based on the current heating treatment time of the silicon wafer being processed, it is determined whether the coverage and compactness of the thin film covering the silicon wafer being processed match the current heating treatment time of the silicon wafer being processed:
[0028] Based on the judgment result, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
[0029] Further, based on the judgment result, selectively adjusting the surface treatment scheme to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or performing a protective treatment on the silicon wafer being processed to generate a protective treatment scheme for the silicon wafer being processed includes:
[0030] If the judgment is no, then determining the abnormal cause of the silicon wafer being processed based on the coverage and compactness of the thin film covering the silicon wafer being processed, wherein the type of the abnormal cause includes at least one of too high temperature, too low temperature, and heating mode error;
[0031] Based on the abnormal cause of the silicon wafer being processed, the current heating treatment time of the silicon wafer being processed, and the coverage and compactness of the film covering the silicon wafer being processed, a surface treatment adjustment scheme corresponding to the surface treatment scheme is generated to adjust the surface treatment scheme;
[0032] If the judgment is yes, then based on the surface data of the silicon wafer being processed, a protection treatment is selectively performed on the silicon wafer being processed, and a protection treatment plan for the silicon wafer being processed is generated.
[0033] Furthermore, the selectively performing protection processing on the silicon wafer being processed based on the surface data of the silicon wafer being processed, and generating a protection processing scheme for the silicon wafer being processed includes:
[0034] Based on the surface data of the silicon wafer being processed, determining whether the silicon wafer being processed needs to be protected:
[0035] If the judgment is yes, then generating a protection treatment scheme for the silicon wafer being processed based on the surface data of the silicon wafer being processed and the surface treatment scheme, so as to implement protection treatment for the silicon wafer being processed;
[0036] If the judgment is no, continue to execute "real-time acquisition of surface data of the silicon wafer being processed" and subsequent steps.
[0037] Furthermore, the method further comprises:
[0038] Obtaining surface data of processed silicon wafers;
[0039] Substitute the surface data of the processed silicon wafer into the surface treatment management module, selectively adjust the surface treatment management module, or generate a protection and remediation plan for the processed silicon wafer.
[0040] In a second aspect, some embodiments of the present application further provide a surface treatment management system for silicon wafer production, the system comprising a communication module, a surface treatment management module and a control device, the communication module being used to communicate with an acquisition device and a heating device, thereby realizing information interaction between the acquisition device and the heating device, the acquisition device being used to acquire silicon wafer data and surface data of silicon wafers in real time, the surface treatment management module being used to generate a surface treatment scheme matching the silicon wafer data based on the silicon wafer data, or to selectively generate a surface treatment adjustment scheme corresponding to the surface treatment scheme based on the surface data of the silicon wafer, or to generate a protective treatment scheme for the silicon wafer being processed, the control device comprising: one or more processing modules; and a storage module storing a program code, wherein the program code enables the processor to perform the steps of the method described above when executed.
[0041] Compared with the related art, in the solution provided by the embodiment of the present application, the surface treatment scheme matching the silicon wafer data is generated and sent to the heating device by substituting the acquired silicon wafer data of the silicon wafer to be processed into the surface treatment management module, thereby realizing the automatic generation of the surface treatment scheme matching the silicon wafer data, and in response to the heating device executing the surface treatment scheme, the surface data of the silicon wafer being processed is acquired in real time, and the surface data of the silicon wafer being processed is substituted into the surface treatment management module, and the surface treatment adjustment scheme corresponding to the surface treatment scheme is selectively generated, or a protection treatment scheme for the silicon wafer being processed is generated, thereby realizing the real-time intelligent management of the silicon wafer being processed, so as to ensure that the sparseness of the thin film covered on the processed silicon wafer is consistent, and then ensure that the thickness of the thin film covered on the silicon wafer is consistent after the silicon wafer is washed with diluted HF, thereby reducing the scrap rate of the product, improving the production efficiency of the product, and avoiding the problem that the surface treatment method of the silicon wafer in the prior art is different due to the inconsistency of the process, environment, conditions, etc., resulting in different sparseness of the SiO2 film surface, thereby causing the same thickness of SiO2 film to be formed. After the iO2 membrane surface is diluted and HF cleaned, there will be technical problems such as varying degrees of SiO2 membrane thickness reduction, which may even lead to product scrapping. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.
[0043] Figure 1 This is a schematic diagram of an exemplary process of a surface treatment management method for silicon wafer production provided according to the first embodiment of the present application;
[0044] Figure 2 A schematic diagram of the structure of a surface treatment management system for silicon wafer production provided according to a second embodiment of the present application;
[0045] Figure 3 An exemplary structural diagram of the electronic device is disclosed.
[0046] List of reference numerals:
[0047] 200: surface treatment management system; 201: control device; 2011: processing module; 2012: storage module; 2013: program code; 202: surface treatment management module; 203: communication module; 1101: processor; 1102: memory; 1103: input device; 1104: output device. DETAILED DESCRIPTION
[0048] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0049] The following terms are used in this article.
[0050] SiO2 film, silicon dioxide film, has the advantages of high hardness, high melting point, excellent chemical stability, almost no reaction with other chemicals, good insulation performance, and low thermal expansion coefficient.
[0051] HF cleaning, hydrofluoric acid cleaning, is used to clean the natural oxide layer formed on the silicon dioxide film covering the silicon wafer. HF cleaning technology can also remove some metal ions, natural oxide layer and some impurity particles.
[0052] First embodiment
[0053] The first embodiment of the present application relates to a surface treatment management method for silicon wafer production. Figure 1 As shown, the method may include the following steps:
[0054] Step S101: Obtaining silicon wafer data of a silicon wafer to be processed, wherein the silicon wafer data includes the silicon wafer size of the silicon wafer to be processed and the film thickness of a film covered on the silicon wafer to be processed;
[0055] Specifically,
[0056] Step S102: Substituting the silicon wafer data into the surface treatment management module, generating a surface treatment plan matching the silicon wafer data and sending the plan to the heating device, wherein the surface treatment plan at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating time;
[0057] Specifically, the step of substituting the silicon wafer data into the surface treatment management module, generating a surface treatment solution matching the silicon wafer data and sending the solution to the heating device includes:
[0058] Based on the silicon wafer data, generating multiple groups of heating schemes, wherein each group of heating schemes at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating duration;
[0059] A plurality of groups of heating schemes are screened, and a group of heating schemes is selected as a surface treatment scheme matching the silicon wafer data and sent to a heating device.
[0060] Specifically, generating multiple groups of heating schemes based on the silicon wafer data includes:
[0061] Based on the silicon wafer size in the silicon wafer data, determining a heating temperature range and a heating time range that match the silicon wafer size;
[0062] Based on the film thickness in the silicon wafer data, the heating temperature range and the heating time range that match the silicon wafer size are limited to obtain the heating temperature limit range and the heating time limit range that match the silicon wafer data;
[0063] Based on the heating temperature limit range and the heating time limit range that match the silicon wafer data, multiple groups of heating plans are generated.
[0064] Specifically, in some embodiments, the heating temperature limit range that matches the silicon wafer data can be 500 degrees to 1000 degrees, and the heating time limit range that matches the silicon wafer data can be 30 minutes to 120 minutes. The settings of the heating temperature limit range and the heating time limit range here are only exemplary. In actual testing, technical personnel in this field can make choices according to actual needs, which will not be repeated here.
[0065] Specifically, screening multiple groups of heating schemes, selecting a group of heating schemes as a surface treatment scheme matching the silicon wafer data and sending the group of heating schemes to the heating device includes:
[0066] Simulating and implementing multiple groups of heating schemes to obtain simulation data of each group of heating schemes, wherein the simulation data at least includes surface data of the silicon wafer after the heating treatment;
[0067] Determine the treatment result score corresponding to each group of heating schemes based on the simulation data of each group of heating schemes;
[0068] A set of heating schemes with the highest processing result scores are selected as surface processing schemes matching the silicon wafer data and sent to the heating device.
[0069] Specifically, the simulation method for simulating the implementation of multiple groups of heating schemes can adopt the simulation technology in the prior art, or it can be a trained neural network model. The choice of simulation technology here is only an exemplary explanation. In actual testing, technical personnel in this field can make a choice according to actual needs. As long as it is possible to simulate the implementation of multiple groups of heating schemes and obtain simulation data for each group of heating schemes, it will not be repeated here.
[0070] Specifically, based on the simulation data of each group of heating schemes, determining the processing result score corresponding to each group of heating schemes includes:
[0071] Based on the simulation data of each group of heating schemes, the coverage and compactness of the thin film covered on the silicon wafer after the heating treatment corresponding to each group of heating schemes are determined;
[0072] Based on the coverage and compactness of the thin film covered on the silicon wafer after the heating treatment corresponding to each group of heating schemes, the processing result score corresponding to each group of heating schemes is determined.
[0073] Specifically, the treatment result score corresponding to each group of heating schemes is obtained by the following formula:
[0074] The processing result score corresponding to the heating scheme = the coverage of the thin film covering the silicon wafer after the heating treatment corresponding to the heating scheme * the weight corresponding to the coverage of the thin film + the compactness of the thin film covering the silicon wafer after the heating treatment corresponding to the heating scheme * the weight corresponding to the compactness of the thin film.
[0075] In the above embodiment, in the module processing, the heating temperature limit range and the heating time limit range that match the silicon wafer data are determined through various data in the silicon wafer data, and then multiple groups of heating schemes are generated, thereby realizing the automatic generation of heating schemes. Then, by simulating and implementing the multiple groups of heating schemes, corresponding simulation data are obtained, and then, based on the simulation data, a group of heating schemes is selected as the surface treatment scheme that matches the silicon wafer data, ensuring that the surface treatment scheme matches the silicon wafer data, thereby realizing the advance prediction of the implementation results of the surface treatment scheme, and improving the implementability of the surface treatment scheme.
[0076] Step S103: in response to the heating device executing the surface treatment scheme, acquiring surface data of the silicon wafer being treated in real time;
[0077] Step S104: Substitute the surface data of the silicon wafer being processed into the surface treatment management module, and selectively generate a surface treatment adjustment plan corresponding to the surface treatment plan, or generate a protection treatment plan for the silicon wafer being processed to ensure that the sparseness of the thin film covering the processed silicon wafer is consistent, and further ensure that the thickness of the thin film covering the silicon wafer is consistent after the silicon wafer is cleaned with diluted HF, thereby reducing the scrap rate of the product and improving the production efficiency of the product.
[0078] Specifically, the step of substituting the surface data of the silicon wafer being processed into the surface processing management module and selectively generating a surface processing adjustment scheme corresponding to the surface processing scheme, or generating a protection processing scheme for the silicon wafer being processed includes:
[0079] Determining the coverage and compactness of the thin film covering the silicon wafer being processed based on the surface data of the silicon wafer being processed;
[0080] Based on the coverage and compactness of the thin film covering the silicon wafer being processed, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
[0081] Specifically, the coverage and compactness of the thin film covering the silicon wafer being processed can be determined by using a trained neural network model, or by an artificial intelligence learning model. The selection of the generation method here is only an exemplary explanation. In actual testing, those skilled in the art can make a selection based on actual needs, as long as it is possible to determine the coverage and compactness of the thin film covering the silicon wafer being processed based on the surface data of the silicon wafer being processed, and no further details will be given here.
[0082] Specifically, the surface treatment scheme is selectively adjusted based on the coverage and compactness of the thin film covering the silicon wafer being processed to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed, including:
[0083] Obtaining the current heating treatment time of the silicon wafer being processed;
[0084] Based on the current heating treatment time of the silicon wafer being processed, it is determined whether the coverage and compactness of the thin film covering the silicon wafer being processed match the current heating treatment time of the silicon wafer being processed:
[0085] Based on the judgment result, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
[0086] Specifically, selectively adjusting the surface treatment scheme based on the judgment result to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or performing a protective treatment on the silicon wafer being processed to generate a protective treatment scheme for the silicon wafer being processed includes:
[0087] If the judgment is no, then determining the abnormal cause of the silicon wafer being processed based on the coverage and compactness of the thin film covering the silicon wafer being processed, wherein the type of the abnormal cause includes at least one of too high temperature, too low temperature, and heating mode error;
[0088] Based on the abnormal cause of the silicon wafer being processed, the current heating treatment time of the silicon wafer being processed, and the coverage and compactness of the film covering the silicon wafer being processed, a surface treatment adjustment scheme corresponding to the surface treatment scheme is generated to adjust the surface treatment scheme;
[0089] If the judgment is yes, then based on the surface data of the silicon wafer being processed, a protection treatment is selectively performed on the silicon wafer being processed, and a protection treatment plan for the silicon wafer being processed is generated.
[0090] Specifically, selectively performing protection processing on the silicon wafer being processed based on the surface data of the silicon wafer being processed, and generating a protection processing scheme for the silicon wafer being processed includes:
[0091] Based on the surface data of the silicon wafer being processed, determining whether the silicon wafer being processed needs to be protected:
[0092] If the judgment is yes, then generating a protection treatment scheme for the silicon wafer being processed based on the surface data of the silicon wafer being processed and the surface treatment scheme, so as to implement protection treatment for the silicon wafer being processed;
[0093] If the judgment is no, continue to execute "real-time acquisition of surface data of the silicon wafer being processed" and subsequent steps to achieve real-time monitoring of the silicon wafer being processed.
[0094] Specifically, the protection treatment scheme for the silicon wafer being processed may be to introduce an inert protective gas, wherein the inert protective gas, such as argon, nitrogen, etc., is used to reduce the oxidative effect of oxygen on the film, thereby protecting the integrity and stability of the film.
[0095] In the above embodiment, in the module processing, the surface treatment adjustment plan or the protection treatment plan is selectively generated by matching the coverage and compactness of the film covering the silicon wafer being processed with the current heating treatment time of the silicon wafer being processed, so as to timely and accurately adjust or protect the silicon wafer being processed according to the actual situation. When there is a mismatch, the abnormal cause of the silicon wafer being processed is determined according to its coverage and compactness, and then combined with the above data, a surface treatment adjustment plan is generated, so as to accurately determine the abnormal cause of the silicon wafer being processed and generate a targeted treatment plan. Alternatively, when there is a match, it is determined whether it needs to be protected according to the surface data of the silicon wafer being processed. If it is determined to be yes, a protection treatment plan is generated, otherwise, real-time monitoring of the surface condition of the silicon wafer being processed is continued; real-time monitoring of the surface condition of the silicon wafer being processed is achieved, and abnormal conditions are targeted for processing, thereby improving the intelligent processing capability of the surface treatment management module and thus improving the yield of silicon wafers.
[0096] Furthermore, the method further comprises:
[0097] Obtaining surface data of processed silicon wafers;
[0098] Substitute the surface data of the processed silicon wafer into the surface treatment management module, selectively adjust the surface treatment management module, or generate a protection and remediation plan for the processed silicon wafer.
[0099] Specifically, the surface data of the processed silicon wafer is substituted into the surface processing management module, and the surface processing management module is selectively adjusted, or a protection and remediation plan for the processed silicon wafer is generated, including:
[0100] Based on the surface data of the processed silicon wafer, determine whether the processed silicon wafer needs to be protected:
[0101] If the judgment is no, then the surface treatment management module is not adjusted, or a protection and remediation plan for the treated silicon wafer is generated;
[0102] If the judgment is yes, determining a protection and remediation score of the processed silicon wafer based on the surface data of the processed silicon wafer;
[0103] Based on the protection and remediation score of the processed silicon wafer, the surface treatment management module is selectively adjusted, or a protection and remediation plan for the processed silicon wafer is generated.
[0104] Specifically, based on the protection and remediation score of the processed silicon wafer, selectively adjusting the surface treatment management module, or generating a protection and remediation plan for the processed silicon wafer includes:
[0105] If the protection and remediation score of the processed silicon wafer is lower than a preset remediable score threshold, it is determined that remediation of the processed silicon wafer can be performed, and a protection and remediation plan for the processed silicon wafer is generated based on the surface data of the processed silicon wafer;
[0106] Otherwise, it is determined that the remediation of the processed silicon wafer cannot be performed, and it is determined that the surface treatment management module needs to be adjusted, and the surface treatment management module is adjusted.
[0107] Specifically, the protective remediation solution for the processed silicon wafer can be to coat a chemical protective layer on the surface of the film to enhance the corrosion resistance and mechanical strength of the film, so that the protective layer can play a protective role in subsequent cleaning and etching processes and reduce damage to the film.
[0108] Specifically, the generation method of multiple groups of heating schemes, the generation method of protective treatment schemes for silicon wafers under processing, the generation method of protective remedial schemes for silicon wafers after processing, and the generation method of surface treatment adjustment schemes corresponding to the surface treatment schemes can be obtained by using a trained neural network model, or can be obtained through an artificial intelligence learning model. The selection of the generation method here is only an exemplary explanation. In actual testing, those skilled in the art can make a selection according to actual needs, as long as it is possible to generate multiple groups of heating schemes according to the heating temperature limit range and the heating time limit range that match the silicon wafer data, generate a protective treatment scheme for the silicon wafer under processing according to the surface data of the silicon wafer under processing and the surface treatment scheme, generate a protective remedial scheme for the silicon wafer after processing according to the surface data of the silicon wafer after processing, and generate a surface treatment adjustment scheme corresponding to the surface treatment scheme according to the abnormal cause of the silicon wafer under processing, the current heating treatment time of the silicon wafer under processing, and the coverage and compactness of the film covering the silicon wafer under processing, it will not be repeated here.
[0109] Specifically, the adjustment method for adjusting the surface treatment management module can be obtained by using a trained neural network model, or by an artificial intelligence learning model. The selection of the adjustment method here is only an exemplary description. In actual tests, those skilled in the art can select it according to actual needs. As long as the surface treatment management module can be adjusted to obtain the adjusted surface treatment management module, and the adjusted surface treatment management module is better than the surface treatment management module before the adjustment, it will not be repeated here.
[0110] It is not difficult to find that, compared with the related art, in the solution provided by the embodiment of the present application, by substituting the acquired silicon wafer data of the silicon wafer to be processed into the surface treatment management module, a surface treatment scheme matching the silicon wafer data is generated and sent to the heating device, thereby realizing the automatic generation of the surface treatment scheme matching the silicon wafer data, and in response to the heating device executing the surface treatment scheme, the surface data of the silicon wafer being processed is acquired in real time, and the surface data of the silicon wafer being processed is substituted into the surface treatment management module, and a surface treatment adjustment scheme corresponding to the surface treatment scheme is selectively generated, or a protection treatment scheme for the silicon wafer being processed is generated, thereby realizing real-time intelligent management of the silicon wafer being processed, so as to ensure that the sparseness of the thin film covered on the processed silicon wafer is consistent, and then ensure that the thickness of the thin film covered on the silicon wafer is consistent after the silicon wafer is washed with diluted HF, thereby reducing the scrap rate of the product, improving the production efficiency of the product, and avoiding the problem that the surface treatment method of the silicon wafer in the prior art is different due to the inconsistency of the process, environment, conditions, etc., resulting in different sparseness of the SiO2 film surface, thereby causing SiO2 films of the same thickness to be formed. After the O2 membrane surface is diluted and HF cleaned, there will be technical problems such as varying degrees of Si O2 membrane thickness reduction, which may even lead to product scrapping.
[0111] The step division of the above methods is only for the purpose of clear description. When implemented, they can be combined into one step or some steps can be split and decomposed into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this patent; adding insignificant modifications to the algorithm or process or introducing insignificant designs without changing the core design of the algorithm and process are all within the scope of protection of this patent.
[0112] Second embodiment
[0113] The second embodiment of the present application relates to a surface treatment management system for silicon wafer production. Figure 2As shown, the surface treatment management system 200 for silicon wafer production includes a communication module 203, a surface treatment management module 202 and a control device 201. The communication module 203 is used to communicate with the acquisition device and the heating device, thereby realizing information exchange between the acquisition device and the heating device. The acquisition device is used to collect silicon wafer data and surface data of the silicon wafer in real time. The surface treatment management module 202 is used to generate a surface treatment scheme matching the silicon wafer data according to the silicon wafer data, or selectively generate a surface treatment adjustment scheme corresponding to the surface treatment scheme according to the surface data of the silicon wafer, or generate a protection treatment scheme for the silicon wafer being processed. The control device 201 includes: one or more processing modules 2011; and a storage module 2012 storing a program code 2013. When the program code 2013 is executed, the processing module 2011 executes the steps of the method provided in any one or more of the above embodiments.
[0114] Specifically, the acquisition device can be a camera device set inside the silicon wafer production, or a photo device, a video device, or a communication module connected to various projects inside the silicon wafer production. The type of acquisition device is not restrictive, and technicians can choose it according to actual use needs, as long as it can realize real-time acquisition of silicon wafer data and silicon wafer surface data. Specifically, the communication module 203 can be connected through wifi, or through Bluetooth, etc., or it can be a wired connection, as long as it can be realized through the communication module 203 to achieve communication connection with the acquisition device and the heating device, and then realize information interaction between the acquisition device and the heating device. The selection of the acquisition device and the communication module 203 here is only an exemplary description. In actual testing, technicians in this field can make a selection according to actual needs, which will not be repeated here.
[0115] It is not difficult to find that this embodiment is a system embodiment corresponding to the first embodiment, and this embodiment can be implemented in conjunction with the first embodiment. The relevant technical details mentioned in the first embodiment are still valid in this embodiment, and in order to reduce repetition, they are not repeated here. Accordingly, the relevant technical details mentioned in this embodiment can also be applied in the first embodiment.
[0116] It is worth mentioning that all modules involved in this embodiment are logic modules. In practical applications, a logic unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of this application, this embodiment does not introduce units that are not closely related to solving the technical problems proposed by this application, but this does not mean that there are no other units in this embodiment.
[0117] In addition, the surface treatment management system 200 for silicon wafer production in some embodiments of the present application also includes an electronic device. The electronic device can be various forms of digital computers, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, etc. The electronic device can also be various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices and other similar computing devices.
[0118] Figure 3 An exemplary structural diagram of the electronic device is disclosed. Figure 3 As shown, the electronic device includes: one or more processors 1101, memory 1102, and interfaces for connecting various components, including high-speed interfaces and low-speed interfaces. The various components are connected to each other using different buses, and can be installed on a common mainboard or installed in other ways as needed. The processor can process instructions executed in the electronic device, including instructions stored in or on the memory to display the graphical information of the GUI on an external input / output device (such as a display device coupled to the interface). In some other embodiments, if necessary, multiple processors and / or multiple buses can be used together with multiple memories and multiple memories. Similarly, multiple electronic devices can be connected, and each device provides some necessary operations (for example, as a server array, a group of blade servers, or a multi-processor system). Among them, the components shown in this article, their connections and relationships, and their functions are only used as examples, and are not intended to limit the implementation of the present application described and / or required herein.
[0119] The electronic device may further include: an input device 1103 and an output device 1104. The processor 1101, the memory 1102, the input device 1103 and the output device 1104 may be connected via a bus or other means. Figure 3 The example of connecting through bus is taken in the following.
[0120] The input device 1103 can receive input digital or character information, and generate key signal input related to the user settings and function control of the electronic device, such as a touch screen, a keypad, a mouse, a track pad, a touch pad, an indicator bar, one or more mouse buttons, a trackball, a joystick and other input devices. The output device 1104 may include a display device, an auxiliary lighting device (e.g., an LED) and a tactile feedback device (e.g., a vibration motor), etc. The display device may include, but is not limited to, a liquid crystal display (LCD), a light emitting diode (LED) display and a plasma display. In some embodiments, the display device may be a touch screen.
[0121] To provide interaction with a user, the electronic device may be a computer. The computer has: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball), through which the user can provide input to the computer. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).
[0122] In the embodiments of the present application, a computer program / instruction is stored on a computer-readable medium, and when the computer program / instruction is executed by a processor, the steps of the method provided by any one or more of the above embodiments are implemented. The computer-readable medium may be included in the electronic device described in the above embodiments; or it may exist independently without being assembled into the device. The above computer-readable medium carries one or more computer-readable instructions.
[0123] The memory 1102 can be used as a non-transient computer-readable storage medium, which can be used to store non-transient software programs, non-transient computer executable programs and modules. The processor 1101 executes various functional applications and data processing of the server by running the non-transient software programs, instructions and modules stored in the memory 1102, so as to implement the program instructions / modules corresponding to the method provided by any one or more embodiments in the embodiments of the present application.
[0124] The memory 1102 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application required for at least one function; the data storage area may store data created according to the use of the electronic device, etc. In addition, the memory 1102 may include a high-speed random access memory, and may also include a non-transient memory, such as at least one disk storage device, a flash memory device, or other non-transient solid-state storage device. In some embodiments, the memory 1102 may optionally include a memory remotely arranged relative to the processor 1101, and these remote memories may be connected to the electronic device via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.
[0125] It should be noted that the computer-readable medium described in the present application may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.
[0126] Computer readable media include permanent and non-permanent, removable and non-removable media, and can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, modules of programs or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, read-only compact disk (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information that can be accessed by a computing device.
[0127] Computer program code for performing the operations of the present application may be written in one or more programming languages or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider to connect via the Internet).
[0128] In the above-described embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. For example, it can be implemented by using an application specific integrated circuit (ASIC), a general-purpose computer or any other similar hardware device. In certain embodiments, the software program of the present application can be executed by a processor to implement the above steps or functions. Similarly, the software program of the present application (including relevant data structures) can be stored in a computer-readable recording medium, for example, a RAM memory, a magnetic or optical drive or a floppy disk and similar devices. In addition, some steps or functions of the present application can be implemented by hardware, for example, as a circuit that cooperates with a processor to perform each step or function.
[0129] The computer program product provided in the embodiment of the present application includes one or more computer programs / instructions, and when the computer program / instructions are executed by the processor, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or a data center that includes one or more available media integrations. The available medium may be a magnetic medium, (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid-state drive so lid state di sk (SSD)), etc.
[0130] The flow chart or block diagram in the accompanying drawings shows the possible architecture, function and operation of the equipment, method and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated system for hardware that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.
[0131] The scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present application. Any figure mark in the claims should not be regarded as limiting the claims involved. In addition, it is clear that the word "comprising" does not exclude other units or steps, and the singular does not exclude the plural. Multiple units or devices stated in the device claim may also be implemented by one unit or device through software or hardware. The words "first", "second", etc. are only used to distinguish the description, and do not indicate any particular order, nor can they be understood as indicating or implying relative importance.
[0132] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily mention changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims, and the above embodiments should be regarded as exemplary and non-restrictive.
Claims
1. A surface treatment management method for silicon wafer production, characterized in that: include: Acquire silicon wafer data of the silicon wafer to be processed, wherein the silicon wafer data includes the silicon wafer size of the silicon wafer to be processed and the film thickness of the film covered on the silicon wafer to be processed; Substituting the silicon wafer data into the surface treatment management module, generating a surface treatment plan matching the silicon wafer data and sending it to the heating device, wherein the surface treatment plan at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating time; In response to the heating device executing the surface treatment scheme, acquiring surface data of the silicon wafer being treated in real time; The surface data of the silicon wafer being processed is substituted into the surface treatment management module, and a surface treatment adjustment scheme corresponding to the surface treatment scheme is selectively generated, or a protection treatment scheme for the silicon wafer being processed is generated.
2. The method according to claim 1, characterized in that Substituting the surface data of the silicon wafer being processed into the surface treatment management module, selectively generating a surface treatment adjustment scheme corresponding to the surface treatment scheme, or generating a protection treatment scheme for the silicon wafer being processed includes: Determining the coverage and compactness of the thin film covering the silicon wafer being processed based on the surface data of the silicon wafer being processed; Based on the coverage and compactness of the thin film covering the silicon wafer being processed, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
3. The method according to claim 2, characterized in that Substituting the silicon wafer data into the surface treatment management module, generating a surface treatment plan matching the silicon wafer data and sending the plan to the heating device comprises: Based on the silicon wafer data, generating multiple groups of heating schemes, wherein each group of heating schemes at least includes a heating mode, a heating temperature corresponding to the heating mode, and a heating duration; A plurality of groups of heating schemes are screened, and a group of heating schemes is selected as a surface treatment scheme matching the silicon wafer data and sent to a heating device.
4. The method according to claim 3, characterized in that The generating a plurality of heating schemes based on the silicon wafer data comprises: Based on the silicon wafer size in the silicon wafer data, determining a heating temperature range and a heating time range that match the silicon wafer size; Based on the film thickness in the silicon wafer data, the heating temperature range and the heating time range that match the silicon wafer size are limited to obtain the heating temperature limit range and the heating time limit range that match the silicon wafer data; Based on the heating temperature limit range and the heating time limit range that match the silicon wafer data, multiple groups of heating plans are generated.
5. The method according to claim 4, characterized in that The screening of multiple groups of heating schemes, selecting a group of heating schemes as a surface treatment scheme matching the silicon wafer data and sending the group of heating schemes to the heating device comprises: Simulating and implementing multiple groups of heating schemes to obtain simulation data of each group of heating schemes, wherein the simulation data at least includes surface data of the silicon wafer after the heating treatment; Determine the treatment result score corresponding to each group of heating schemes based on the simulation data of each group of heating schemes; A set of heating schemes with the highest processing result scores are selected as surface processing schemes matching the silicon wafer data and sent to the heating device.
6. The method according to claim 5, characterized in that The selectively adjusting the surface treatment scheme based on the coverage and compactness of the thin film covering the silicon wafer being processed to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or performing a protective treatment on the silicon wafer being processed to generate a protective treatment scheme for the silicon wafer being processed includes: Obtaining the current heating treatment time of the silicon wafer being processed; Based on the current heating treatment time of the silicon wafer being processed, it is determined whether the coverage and compactness of the thin film covering the silicon wafer being processed match the current heating treatment time of the silicon wafer being processed: Based on the judgment result, the surface treatment scheme is selectively adjusted to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or the silicon wafer being processed is protected to generate a protection treatment scheme for the silicon wafer being processed.
7. The method according to claim 6, characterized in that The selectively adjusting the surface treatment scheme based on the judgment result to generate a surface treatment adjustment scheme corresponding to the surface treatment scheme, or performing a protective treatment on the silicon wafer being processed to generate a protective treatment scheme for the silicon wafer being processed includes: If the judgment is no, then determining the abnormal cause of the silicon wafer being processed based on the coverage and compactness of the thin film covering the silicon wafer being processed, wherein the type of the abnormal cause includes at least one of too high temperature, too low temperature, and heating mode error; Based on the abnormal cause of the silicon wafer being processed, the current heating treatment time of the silicon wafer being processed, and the coverage and compactness of the film covering the silicon wafer being processed, a surface treatment adjustment scheme corresponding to the surface treatment scheme is generated to adjust the surface treatment scheme; If the judgment is yes, then based on the surface data of the silicon wafer being processed, a protection treatment is selectively performed on the silicon wafer being processed, and a protection treatment plan for the silicon wafer being processed is generated.
8. The method according to claim 7, characterized in that The selectively performing protection processing on the silicon wafer being processed based on the surface data of the silicon wafer being processed and generating a protection processing scheme for the silicon wafer being processed includes: Based on the surface data of the silicon wafer being processed, determining whether the silicon wafer being processed needs to be protected: If the judgment is yes, then generating a protection treatment scheme for the silicon wafer being processed based on the surface data of the silicon wafer being processed and the surface treatment scheme, so as to implement protection treatment for the silicon wafer being processed; If the judgment is no, continue to execute "real-time acquisition of surface data of the silicon wafer being processed" and subsequent steps.
9. The method according to claim 8, characterized in that The method further comprises: Obtaining surface data of processed silicon wafers; Substitute the surface data of the processed silicon wafer into the surface treatment management module, selectively adjust the surface treatment management module, or generate a protection and remediation plan for the processed silicon wafer.
10. A surface treatment management system for silicon wafer production, characterized in that: The system includes a communication module, a surface treatment management module and a control device. The communication module is used to communicate with the acquisition device and the heating device to realize information exchange between the acquisition device and the heating device. The acquisition device is used to collect silicon wafer data and surface data of the silicon wafer in real time. The surface treatment management module is used to generate a surface treatment plan that matches the silicon wafer data based on the silicon wafer data, or selectively generate a surface treatment adjustment plan corresponding to the surface treatment plan based on the surface data of the silicon wafer, or generate a protection treatment plan for the silicon wafer being processed. The control device includes: one or more processing modules; and a storage module storing a program code, and when the program code is executed, the processing module executes the steps of the method as described in any one of claims 1 to 9.