Method and device for monitoring temperature stability of metal gate filling process

Abstract

The invention discloses a method and device for monitoring the temperature stability of metal gate filling metal aluminum, which are applied to the field of semiconductor preparation, and the method comprises the steps: obtaining a standard lamination resistance value, and if the standard lamination resistance value is verified to be reasonable, taking the standard lamination resistance value as a first standard lamination resistance value; the first standard lamination resistance value is a corresponding lamination resistance value when the process temperature is a first preset temperature; measuring the resistance value of the laminated structure of the prepared metal gate to obtain a laminated resistance value; and if the lamination resistance value is greater than the first standard lamination resistance value, determining that the process temperature is higher than a first preset temperature. According to the method, the resistance value of the laminated structure of the metal gate formed after process filling is measured, the process temperature during metal aluminum filling is further determined, the process temperature value during metal aluminum filling of the metal gate can be fed back more accurately, the efficiency of temperature monitoring during metal gate filling is improved, and the reliability of temperature monitoring is improved. And the yield of wafer preparation is improved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor preparation, and in particular to a method and a device for monitoring the temperature stability of a metal gate filling process. Background Art

[0002] In the existing metal gate preparation process, taking the 28nm high dielectric constant metal gate preparation process as an example, after the work function metal is deposited, a deposition process is required to connect the metal gate to the outside, and this process mostly uses hot aluminum filling. At present, the reflectivity of a single-layer aluminum film is used to monitor the temperature of the process to avoid excessive temperature affecting the product effect after filling and molding, resulting in a high resistance value of the stacked structure of the metal gate after filling. This method is easily affected by factors such as the thickness of the aluminum film, the cavity leakage rate, and the impurity content of the cavity. In addition, the reflectivity of the aluminum film is not sensitive to temperature changes, and it is difficult to accurately judge the heating temperature. Summary of the invention

[0003] In view of this, the purpose of the present invention is to provide a method and device for monitoring the temperature stability of a metal gate filling process, which solves the problem in the prior art that the reflectivity of the aluminum film is not sensitive to temperature changes and it is difficult to accurately judge the heating temperature.

[0004] In order to solve the above technical problems, the present invention provides a method for monitoring the temperature stability of a metal gate filling process, comprising:

[0005] Obtaining a standard stacking resistance value, and if the standard stacking resistance value is verified to be reasonable, taking the standard stacking resistance value as a first standard stacking resistance value; the first standard stacking resistance value is a stacking resistance value corresponding to a process temperature of a first preset temperature;

[0006] Measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value; the stacked structure includes a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer;

[0007] If the stack resistance value is greater than the first standard stack resistance value, it is determined that the process temperature is higher than the first preset temperature.

[0008] Optionally, after measuring the resistance value of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes:

[0009] If the stack resistance value is lower than a second standard stack resistance value, determining that the process temperature is lower than a second preset temperature value;

[0010] The second standard stacking resistance value is the minimum temperature value at which no filling defect occurs during the metal aluminum filling, and the corresponding stacking resistance value.

[0011] Optionally, after measuring the resistance value of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes:

[0012] If the year-on-year growth rate of the stack resistance value is greater than a preset value, the preparation of the next stack structure of the metal gate is stopped.

[0013] Optionally, obtaining a standard stack resistance value includes:

[0014] Under a preset temperature condition, the metal aluminum is used to fill and form a corresponding first metal gate stacked structure; the preset temperature is a temperature range including the first preset temperature;

[0015] The resistance value of the stacked structure of the first metal gate is measured to obtain a stacked resistance value corresponding to a preset temperature as the standard stacked resistance value.

[0016] Optionally, after determining that the process temperature is higher than the first preset temperature, the method further includes:

[0017] The preparation of the next stacked structure of the metal gate is stopped.

[0018] Optionally, the obtaining of a standard stack resistance value, and if the standard stack resistance value is verified to be reasonable, taking the standard stack resistance value as the first standard stack resistance value, includes:

[0019] Obtaining the standard stack resistance value;

[0020] Scanning the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve;

[0021] Using the titanium content curve to check whether the standard stack resistance value is reasonable;

[0022] If the titanium content curve has a peak at a preset depth, it is determined that the standard stack resistance value is reasonable; the preset depth is the position at which the titanium content curve forms a peak when the metal aluminum is used to fill the stack structure of the metal gate at the first preset temperature;

[0023] The standard stack resistance value is used as the first standard stack resistance value.

[0024] Optionally, after measuring the resistance value of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes:

[0025] If the stack resistance value is greater than the third standard stack resistance value, a warning message is output; and the third standard stack resistance value is less than the first standard stack resistance value.

[0026] Optionally, after determining that the process temperature is higher than the first preset temperature, the method further includes:

[0027] Outputting alarm information indicating that the process temperature is higher than the first preset temperature.

[0028] The present invention also provides a device for monitoring the temperature stability of a metal gate filling process, comprising:

[0029] A first standard stack resistance value acquiring component, a stack resistance value measuring component and a processing component; the stack resistance value measuring component is in communication connection with the processing component;

[0030] The first standard stack resistance value acquisition component is used to acquire a standard stack resistance value. If the standard stack resistance value is verified to be reasonable, the standard stack resistance value is used as the first standard stack resistance value; the first standard stack resistance value is a stack resistance value corresponding to a process temperature of a first preset temperature;

[0031] The stack resistance value measuring component is used to measure the resistance value of the stack structure of the prepared metal gate to obtain the stack resistance value;

[0032] The processing component is used for determining that the process temperature is higher than a first preset temperature when the stack resistance value is greater than the first standard stack resistance value.

[0033] Optionally, the first standard stack resistance value obtaining component includes:

[0034] Standard stack resistance value acquisition subcomponent, titanium content scanning subcomponent and analysis subcomponent;

[0035] The standard stack resistance value acquisition subcomponent is used to acquire the standard stack resistance value;

[0036] The titanium content scanning subcomponent is used to scan the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve;

[0037] The analysis subcomponent uses the titanium content curve to verify whether the first standard stacking resistance value is reasonable; if the titanium content curve has a peak at a preset depth, the first standard stacking resistance value is determined to be reasonable; the preset depth is the position at which the titanium content curve forms a peak when the metal aluminum is used to fill the stacking structure of the metal gate at the first preset temperature; the standard stacking resistance value is used as the first standard stacking resistance value.

[0038] It can be seen that the monitoring method for the temperature stability of the metal gate filled with metal aluminum provided by the present invention includes obtaining a standard stacking resistance value. If the standard stacking resistance value is verified to be reasonable, the standard stacking resistance value is used as the first standard stacking resistance value; the first standard stacking resistance value is the corresponding stacking resistance value when the process temperature is the first preset temperature, and the resistance value of the stacking structure of the prepared metal gate is measured to obtain the stacking resistance value, and the stacking structure includes a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer. If the stacking resistance value is greater than the first standard stacking resistance value, it is determined that the process temperature is higher than the first preset temperature. The present invention measures the resistance value of the stacking structure of the metal gate formed after the metal aluminum is filled, and then determines the process temperature when the metal aluminum is filled. It can more accurately feedback the process temperature value when the metal gate is filled with metal aluminum, improve the efficiency of temperature monitoring when the metal gate is filled, and thus improve the yield of wafer preparation.

[0039] In addition, the present invention also provides a monitoring device for the temperature stability of a metal gate filling process, which also has the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0041] Figure 1 A flow chart of a method for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention;

[0042] Figure 2 A flow chart of another method for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention;

[0043] Figure 3 A schematic structural diagram of a device for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] In the existing metal gate preparation process, taking the 28nm high dielectric constant metal gate preparation process as an example, after the work function metal is deposited, metal aluminum needs to be deposited to connect the metal gate to the outside, and a layer of titanium nitride and wet titanium will be deposited before the metal aluminum is filled, and then hot aluminum is used for filling. At present, the reflectivity of a single-layer aluminum film is used to monitor the process temperature to avoid the process temperature being too high and affecting the filling and molding effect. This method is easily affected by factors such as the thickness of the aluminum film, the cavity leakage rate, and the cavity impurity content. It is difficult to accurately judge the temperature of the filling process, and the reflectivity of the aluminum film is not sensitive to temperature changes. When the temperature change amplitude is small, it is difficult to accurately judge the heating temperature.

[0046] The present invention determines the process temperature during the metal aluminum filling by measuring the resistance value of the stacked structure of the metal gate formed after the metal aluminum filling, and can more accurately feedback the process temperature value when the metal gate is filled with metal aluminum, thereby improving the efficiency of temperature monitoring during the metal gate filling, and further improving the yield of wafer preparation.

[0047] Embodiment 1:

[0048] Please refer to Figure 1 , Figure 1 A flow chart of a method for monitoring temperature stability of a metal gate filling process provided by an embodiment of the present invention. The method may include:

[0049] S101: Obtain a standard stacking resistance value. If the standard stacking resistance value is verified to be reasonable, use the standard stacking resistance value as a first standard stacking resistance value. The first standard stacking resistance value is a stacking resistance value corresponding to a process temperature of a first preset temperature.

[0050] It should be noted that in this embodiment, the resistance value of the laminated structure formed by metal aluminum filling under the first preset temperature condition is used as the first standard laminated resistance value. In this embodiment, the standard laminated resistance value is obtained and the obtained standard laminated resistance value is verified. If the verification result shows that the standard laminated resistance value is reasonable, the standard laminated resistance value is used as the first standard laminated resistance value. In this embodiment, the standard laminated resistance value is the obtained laminated resistance value corresponding to the process temperature being the first preset temperature, which is determined without verification. This embodiment does not limit the method for obtaining the standard laminated resistance value, and accordingly, this embodiment also does not limit the specific method for verifying whether the standard laminated resistance value is reasonable.

[0051] Further, in order to ensure the effectiveness of obtaining the standard stack resistance value, the above-mentioned obtaining the standard stack resistance value may include the following steps:

[0052] Step S21: Under a preset temperature condition, using metal aluminum to fill and form a corresponding first metal gate stacked structure; the preset temperature is a temperature range including the first preset temperature;

[0053] Step S22: measuring the resistance of the stacked structure of the first metal gate to obtain a stacked resistance value corresponding to a preset temperature as a standard stacked resistance value.

[0054] In this embodiment, by determining a preset temperature and preparing a stacked structure of a corresponding metal gate under the preset temperature condition, the stacked resistance value at this time is used as the standard stacked resistance value, which can ensure the validity of the obtained standard stacked resistance value. In this embodiment, the preset temperature is a temperature range including the first preset temperature. Under the premise that the preset temperature includes the first preset temperature, the smaller the range, the higher the validity of the obtained standard stacked resistance value, but the corresponding working condition control cost and complexity are higher.

[0055] S102: measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value; the stacked structure includes a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer.

[0056] The execution subject in this embodiment is a measuring device. In this embodiment, the resistance value of the stacked structure of the metal gate in the wafer is measured, and the resistance value of the stacked metal gate after the metal aluminum filling is measured. At this time, the process can continue to fill the subsequent gate to be filled with metal aluminum, or the step of filling the subsequent gate to be filled with metal aluminum can be suspended, and the step of filling the metal aluminum can be continued after determining that the temperature is stable. It should be noted that in this embodiment, the stacked metal gate is composed of at least a deposited titanium layer, metal aluminum, and a titanium-aluminum alloy formed by the contact surface of titanium and metal aluminum. A titanium nitride layer can be deposited before depositing the titanium layer.

[0057] S103: If the stack resistance value is greater than the first standard stack resistance value, determine that the process temperature is higher than the first preset temperature.

[0058] It should be noted that if the process temperature increases during the metal aluminum filling in this embodiment, the resistance value of the formed stack will increase. Therefore, this embodiment can use the set first standard stack resistance value to compare with the measured stack resistance value. When the stack resistance value is greater than the first standard stack resistance value, it is determined that the process temperature is higher than the first preset temperature. It should be further noted that the maximum preparation temperature at which a qualified wafer can be prepared during the preparation process is used as the above-mentioned first preset temperature. This embodiment does not limit the specific temperature value of the first preset temperature, and it can be set according to the requirements of the metal gate filling process. Accordingly, this embodiment also does not limit the specific method of determining the first standard stack resistance value and the first preset temperature.

[0059] Furthermore, in order to further ensure the temperature stability during the process of filling the metal gate with metal aluminum, after measuring the resistance value of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the following steps may be further included:

[0060] Step S11: if the stack resistance value is lower than the second standard stack resistance value, determining that the process temperature is lower than the second preset temperature value.

[0061] The second standard stacking resistance value is the minimum temperature value at which no filling defect occurs when metal aluminum is filled, and the corresponding stacking resistance value.

[0062] In this embodiment, when the process temperature during metal aluminum filling is too low, it will cause uneven metal aluminum filling, which will lead to missing of the stacked structure of the metal gate formed by filling. In this embodiment, after determining that the process temperature is lower than the second preset temperature value, the filling of metal aluminum in the next metal gate can be stopped to avoid filling missing, that is, the step of stopping the filling of metal aluminum here is to stop the metal gate being filled with metal aluminum in the current process, rather than completing the filling and the stacked structure of the metal gate being measured.

[0063] Furthermore, in order to further improve the temperature stability monitoring efficiency of the metal gate filled with metal aluminum and avoid the problem that the device does not meet the process requirements due to the failure to timely measure the excessive temperature during the process filling, after measuring the resistance value of the stacked structure of the prepared metal gate and obtaining the stacked resistance value, the following may also be included:

[0064] If the year-on-year growth rate of the stack resistance value is greater than a preset value, the preparation of the stack structure of the next metal gate is stopped.

[0065] It should be noted that the year-on-year growth rate of the stack resistance value in this embodiment is the difference between the stack resistance value measured currently and the previous stack resistance value, divided by the value obtained by the previous stack resistance value, as the year-on-year growth rate of the current stack resistance value. At this time, if the year-on-year growth rate of the current stack resistance value is greater than the preset value, it can be determined that the stack resistance value is growing too fast, and the preparation of the next metal gate stack structure can be stopped. This embodiment does not limit the setting value of the preset value. For example, the setting value of the preset value can be 10%, or the setting value of the preset value can also be 12%, which can be set according to process requirements.

[0066] Furthermore, in order to improve the functionality of the above-mentioned monitoring method for the temperature stability of the metal gate filled with metal aluminum, after determining that the process temperature is higher than the first preset temperature, it can also include: stopping the preparation of the next metal gate stacking structure.

[0067] It should be noted that in this embodiment, by stopping the preparation of the next metal gate stack structure after determining that the process temperature is higher than the first preset temperature, corresponding measures can be taken in time after the result that the process temperature is too high is obtained, while improving the functionality of temperature stability monitoring.

[0068] Furthermore, in order to improve the functionality of the monitoring method for the temperature stability of the metal gate filled with metal aluminum, so as to avoid the problem of reduced yield of finished products due to excessively high process temperature during metal aluminum filling, after measuring the resistance value of the stacked structure of the prepared metal gate and obtaining the stacked resistance value, the method may also include:

[0069] If the stack resistance value is greater than the third standard stack resistance value, a warning message is output; and the third standard stack resistance value is less than the first standard stack resistance value.

[0070] It should be noted that in this embodiment, a third standard stacking resistance value is set, and the third standard stacking resistance value is less than the first standard stacking resistance value, and it can be expected that the third standard stacking resistance value is within the stacking resistance value range required by the process. This embodiment does not limit the setting method of the third standard stacking resistance value, and the stacking resistance value that differs from the first standard stacking resistance value by a preset resistance value can be set as the third standard stacking resistance value, wherein the preset resistance value is the maximum value of the process temperature rise in the process of completing a metal gate stacking structure; or the third standard stacking resistance value can also be set in other ways. It should be further noted that in this embodiment, by setting the third standard stacking resistance value, when the stacking resistance value is greater than the third standard stacking resistance value, an early warning message is output to remind the operator that the process temperature is at risk of rising to the first preset temperature, so that the operator can take corresponding measures to further ensure the temperature stability in the process of filling the metal gate with metal aluminum.

[0071] Furthermore, in order to further improve the functionality of the method for monitoring the temperature stability of the metal gate filled with metal aluminum, after determining that the process temperature is higher than the first preset temperature, the method may further include:

[0072] Output alarm information when the process temperature is higher than the first preset temperature.

[0073] It should be noted that in this embodiment, by outputting an alarm message when the process temperature is higher than the first preset temperature, the operator can be reminded in time so that the operator can understand the process information in time. This embodiment does not limit the specific method of outputting the alarm message. For example, the alarm message can be output in the form of sound, or the alarm message can be output in other ways.

[0074] The method for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention comprises measuring the resistance of a laminated structure of a prepared metal gate to obtain a laminated resistance value, wherein the laminated structure comprises a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer. If the laminated resistance value is greater than a first standard laminated resistance value, it is determined that the process temperature is higher than a first preset temperature, and the first standard laminated resistance value is a corresponding laminated resistance value when the process temperature is the first preset temperature. The present invention measures the resistance of the laminated structure of a metal gate formed after metal aluminum filling, and then determines the process temperature when metal aluminum is filled. It can more accurately feedback the process temperature value when the metal gate is filled with metal aluminum, thereby improving the efficiency of temperature monitoring when the metal gate is filled, and thereby improving the yield of wafer preparation. In addition, the embodiment of the present invention prepares the stacking resistance value of the stacking structure of the corresponding metal gate under the condition of a determined preset temperature as the standard stacking resistance value, thereby ensuring the validity of the obtained standard stacking resistance value; by setting the second standard stacking resistance value and determining that the process temperature is lower than the second preset temperature value when the stacking resistance value is lower than the second standard stacking resistance value, the information of abnormal process temperature can be obtained in time to avoid filling missing; by stopping the preparation of the stacking structure of the next metal gate when the year-on-year growth rate of the stacking resistance value is greater than the preset value, the monitoring efficiency of the temperature stability of the metal gate filled with metal aluminum is further improved, thereby avoiding the problem that the device does not meet the process requirements due to the failure to timely measure the process temperature when the metal aluminum is filled. By setting the third standard stacking resistance value, when the stacking resistance value is greater than the third standard stacking resistance value, an early warning message is output to remind the operator that the process temperature is at risk of rising to the first preset temperature, so that the operator can take corresponding measures to further ensure the temperature stability of the metal gate filled with metal aluminum; by outputting an alarm message when the process temperature is higher than the first preset temperature, the operator can understand the process information in time.

[0075] Embodiment 2:

[0076] Please refer to Figure 2 , Figure 2 A flow chart of another method for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention may include:

[0077] S201: Obtain a standard stack resistance value.

[0078] S202: Scan the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve.

[0079] It should be noted that in this embodiment, by scanning the titanium content at different depths in the laminated structure of the metal gate, the rationality of the standard laminated resistance value is verified according to the obtained titanium content curve, which can further improve the accuracy of temperature stability monitoring. In this embodiment, a titanium-aluminum alloy will be formed at the contact surface between the process and the titanium metal, and as the process temperature increases, the content of the formed titanium-aluminum alloy is higher, which will cause the titanium content curve to have a peak at the upper position of the preset depth. Therefore, the rationality of the first standard laminated resistance value can be verified according to the titanium content curve. That is, when the titanium content curve has a peak at the preset depth, it is determined that the first standard laminated resistance value is set reasonably. However, it should be noted that in verifying the rationality of the first standard laminated resistance value using the titanium content curve, an energy spectrometer (EDS) can be used to scan the laminated metal gate by energy spectrum line scanning.

[0080] S203: Use the titanium content curve to verify whether the standard stack resistance value is reasonable.

[0081] In this embodiment, the rationality of the standard stack resistance value can be verified by the position where the peak of the titanium content curve appears.

[0082] S204: If the titanium content curve has a peak at a preset depth, it is determined that the standard stack resistance value is reasonable; the preset depth is the position where the titanium content curve forms a peak when the stack structure of the metal gate is formed by filling with metal aluminum at a first preset temperature.

[0083] When the titanium content curve has a peak at a preset depth, that is, the peak of the titanium content curve is located at the preset depth, that is, the position corresponding to the working temperature being the first preset temperature, the standard stack resistance value is reasonable.

[0084] S205: taking the standard stack resistance value as the first standard stack resistance value; the first standard stack resistance value is the stack resistance value corresponding to the process temperature being the first preset temperature;

[0085] S206: measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value; the stacked structure includes a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer.

[0086] S207: If the stack resistance value is greater than the first standard stack resistance value, determine that the process temperature is higher than the first preset temperature.

[0087] That is, when the titanium content curve has a peak at the preset depth, it is determined that the first standard stack resistance value is set reasonably. However, it should be noted that in verifying the rationality of the first standard stack resistance value using the titanium content curve, an energy dispersive spectrometer (EDS) can be used to scan the stacked metal gate by energy spectrum line scanning.

[0088] The method for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention comprises obtaining a standard stacking resistance value, scanning the content of titanium at different depths in the stacking structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve, and using the titanium content curve to verify whether the standard stacking resistance value is reasonable. If a peak value appears in the titanium content curve at a preset depth, it is determined that the standard stacking resistance value is reasonable; the preset depth is the position at which a peak value is formed in the titanium content curve when the stacking structure of the metal gate is formed by filling with metal aluminum at a first preset temperature. The standard stacking resistance value is used as the first standard stacking resistance value, and the resistance value of the stacking structure of the prepared metal gate is measured to obtain the stacking resistance value. The stacking structure comprises a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer. If the stacking resistance value is greater than the first standard stacking resistance value, it is determined that the process temperature is higher than the first preset temperature. The present invention measures the resistance of the laminated structure of the metal gate formed after the metal aluminum is filled, and then determines the process temperature when the metal aluminum is filled. It can more accurately feedback the process temperature value when the metal gate is filled with metal aluminum, improve the efficiency of temperature monitoring when the metal gate is filled, and then improve the yield of wafer preparation. By scanning the content of titanium element at different depths in the laminated metal gate, the rationality of the standard laminated resistance value is verified according to the obtained titanium element content curve, which can further improve the accuracy of temperature stability monitoring.

[0089] The following is an introduction to a device for monitoring the temperature stability of a metal gate filled with metal aluminum provided in an embodiment of the present invention. The device for monitoring the temperature stability of a metal gate filled with metal aluminum described below and the method for monitoring the temperature stability of a metal gate filled with metal aluminum described above can be referenced to each other.

[0090] Please refer to Figure 3 , Figure 3 A schematic structural diagram of a device for monitoring the temperature stability of a metal gate filled with metal aluminum provided by an embodiment of the present invention may include:

[0091] A first standard stack resistance value acquiring component 100, a stack resistance value measuring component 200 and a processing component 300; the stack resistance value measuring component 200 is communicatively connected with the processing component 300;

[0092] The first standard stack resistance value acquisition component 100 is used to acquire a standard stack resistance value. If the verified standard stack resistance value is reasonable, the standard stack resistance value is used as the first standard stack resistance value; the first standard stack resistance value is the stack resistance value corresponding to the process temperature being the first preset temperature;

[0093] The stack resistance value measuring component 200 is used to measure the resistance value of the stack structure of the prepared metal gate to obtain the stack resistance value;

[0094] The processing component 300 is used to determine that the process temperature is higher than the first preset temperature when the stack resistance value is greater than the first standard stack resistance value.

[0095] In this embodiment, by communicating with the stack resistance value measuring component 200 and the processing component 300, the stack resistance value can be measured by the stack resistance value measuring component 200, and the measured stack resistance value can be transmitted to the processing component 300 for processing.

[0096] Furthermore, in order to improve the accuracy of temperature monitoring, the first standard stack resistance value obtaining component 100 may include the following components:

[0097] Standard stack resistance value acquisition subcomponent, titanium content scanning subcomponent and analysis subcomponent;

[0098] The standard stack resistance value acquisition subcomponent is used to acquire the standard stack resistance value;

[0099] The titanium content scanning subcomponent is used to scan the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve;

[0100] The analysis subcomponent uses the titanium content curve to verify whether the first standard stacking resistance value is reasonable; if the titanium content curve has a peak at a preset depth, the first standard stacking resistance value is determined to be reasonable; the preset depth is the position at which the titanium content curve forms a peak when a stacking structure of a metal gate is formed by filling with metal aluminum at a first preset temperature; the standard stacking resistance value is used as the first standard stacking resistance value.

[0101] It should be noted that in this embodiment, the titanium content scanning component is used to verify whether the standard stack resistance value is reasonable, thereby improving the accuracy of the temperature monitoring by the above-mentioned monitoring device. It should be further noted that in this embodiment, the standard stack resistance value is verified to be reasonable according to the titanium content curve, and the standard stack resistance value can be used for the temperature stability monitoring step of the metal gate filled with metal aluminum. This embodiment is not limited to the processing steps when the standard stack resistance value is unreasonable according to the titanium content curve. For example, when the standard stack resistance value is verified to be unreasonable, the above-mentioned verification process can be enabled again for verification, or the above-mentioned standard stack resistance value can be determined again, or the standard stack resistance value can be adjusted according to the titanium content curve, or other methods can be adopted, and the process can be stopped during the process.

[0102] The monitoring device for the temperature stability of metal gate filled with metal aluminum provided by the embodiment of the present invention comprises a first standard stacking resistance value acquisition component 100, a stacking resistance value measurement component 200 and a processing component 300, wherein the stacking resistance value measurement component 200 is connected in communication with the processing component 300, the first standard stacking resistance value acquisition component 100 is used to obtain a standard stacking resistance value, and if the standard stacking resistance value is verified to be reasonable, the standard stacking resistance value is used as the first standard stacking resistance value; the first standard stacking resistance value is the stacking resistance value corresponding to the process temperature being the first preset temperature, the stacking resistance value measurement component 200 is used to measure the resistance value of the stacking structure of the prepared metal gate to obtain the stacking resistance value, and the processing component 300 is used to determine that the process temperature is higher than the first preset temperature when the stacking resistance value is greater than the first standard stacking resistance value. . The present invention measures the resistance value of the stacking structure of the metal gate formed after the metal aluminum is filled, and then determines the filling temperature of the process, so as to more accurately feedback the process temperature of the metal gate filled with metal aluminum, improve the efficiency of the process temperature monitoring when the metal gate is filled, and thus improve the quality rate of product preparation. In addition, by using the titanium content scanning component to verify whether the standard laminate resistance value is reasonable, the accuracy of the temperature monitoring by the above-mentioned monitoring device is improved.

[0103] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0104] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0105] Finally, it should be noted that, in this article, relationships such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations are intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0106] The above is a detailed introduction to the temperature stability monitoring method and device for a metal gate filled with metal aluminum provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for monitoring the temperature stability of a metal gate filled with aluminum, characterized in that: include: Obtaining a standard stack resistance value, and if the standard stack resistance value is verified to be reasonable, taking the standard stack resistance value as a first standard stack resistance value; The first standard stack resistance value is a stack resistance value corresponding to when the process temperature is a first preset temperature; Measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value; the stacked structure includes a titanium-containing layer and an aluminum-containing layer located on the titanium-containing layer; If the stack resistance value is greater than the first standard stack resistance value, it is determined that the process temperature is higher than the first preset temperature.

2. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: After measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes: If the stack resistance value is lower than a second standard stack resistance value, determining that the process temperature is lower than a second preset temperature value; The second standard stacking resistance value is the minimum temperature value at which no filling defect occurs during the metal aluminum filling, and the corresponding stacking resistance value.

3. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: After measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes: If the year-on-year growth rate of the stack resistance value is greater than a preset value, the preparation of the next stack structure of the metal gate is stopped.

4. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: The step of obtaining a standard stack resistance value includes: Under a preset temperature condition, the metal aluminum is used to fill and form a corresponding first metal gate stacked structure; the preset temperature is a temperature range including the first preset temperature; The resistance value of the stacked structure of the first metal gate is measured to obtain a stacked resistance value corresponding to a preset temperature as the standard stacked resistance value.

5. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: After determining that the process temperature is higher than the first preset temperature, the method further includes: The preparation of the next stacked structure of the metal gate is stopped.

6. The method for monitoring the temperature stability of a metal gate filled with metal aluminum according to any one of claims 1 to 5, characterized in that: The step of obtaining a standard stack resistance value and taking the standard stack resistance value as a first standard stack resistance value if the standard stack resistance value is verified to be reasonable includes: Obtaining the standard stack resistance value; Scanning the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve; Using the titanium content curve to check whether the standard stack resistance value is reasonable; If the titanium content curve has a peak at a preset depth, it is determined that the standard stack resistance value is reasonable; the preset depth is the position at which the titanium content curve forms a peak when the metal aluminum is used to fill the stack structure of the metal gate at the first preset temperature; The standard stack resistance value is used as the first standard stack resistance value.

7. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: After measuring the resistance of the stacked structure of the prepared metal gate to obtain the stacked resistance value, the method further includes: If the stack resistance value is greater than the third standard stack resistance value, a warning message is output; and the third standard stack resistance value is less than the first standard stack resistance value.

8. The method for monitoring the temperature stability of metal gate filled with aluminum according to claim 1, characterized in that: After determining that the process temperature is higher than the first preset temperature, the method further includes: Outputting alarm information indicating that the process temperature is higher than the first preset temperature.

9. A monitoring device for the temperature stability of a metal gate filled with metal aluminum, characterized in that: include: A first standard stack resistance value acquiring component, a stack resistance value measuring component and a processing component; The stack resistance value measuring component is communicatively connected with the processing component; The first standard stack resistance value obtaining component is used to obtain a standard stack resistance value, and if the standard stack resistance value is verified to be reasonable, the standard stack resistance value is used as the first standard stack resistance value; The first standard stack resistance value is a stack resistance value corresponding to when the process temperature is a first preset temperature; The stack resistance value measuring component is used to measure the resistance value of the stack structure of the prepared metal gate to obtain the stack resistance value; The processing component is used for determining that the process temperature is higher than a first preset temperature when the stack resistance value is greater than the first standard stack resistance value.

10. The device for monitoring the temperature stability of metal gate filled with aluminum according to claim 9, characterized in that: The first standard stack resistance value obtaining component includes: Standard stack resistance value acquisition subcomponent, titanium content scanning subcomponent and analysis subcomponent; The standard stack resistance value acquisition subcomponent is used to acquire the standard stack resistance value; The titanium content scanning subcomponent is used to scan the titanium content at different depths in the stacked structure of the metal gate along the filling and deposition direction of the metal aluminum to obtain a titanium content curve; The analysis subcomponent uses the titanium content curve to verify whether the first standard stacking resistance value is reasonable; if the titanium content curve has a peak at a preset depth, the first standard stacking resistance value is determined to be reasonable; the preset depth is the position at which the titanium content curve forms a peak when the metal aluminum is used to fill the stacking structure of the metal gate at the first preset temperature; the standard stacking resistance value is used as the first standard stacking resistance value.

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