Package with windowed heat sink

Abstract

The invention relates to a package with a windowed heat sink. A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A sub-package is also disposed over the substrate. A stiffener is disposed over the substrate surrounding the first semiconductor die and the sub-package. The heat sink is disposed over the stiffener. The heat spreader is thermally coupled to the first semiconductor die. The heat spreader has an opening over the sub-package.

Description

Technical Field

[0001] The present invention relates generally to semiconductor devices and, more particularly, to semiconductor devices and methods of forming semiconductor devices having windowed heat sinks. Background Art

[0002] Semiconductor devices are commonly found in modern electronic products. They perform a wide range of functions, such as signal processing, high-speed computing, transmitting and receiving electromagnetic signals, controlling electronic devices, converting sunlight into electricity, and creating visual images for television displays. Semiconductor devices are found in the fields of communications, power conversion, networking, computers, entertainment, and consumer products. Semiconductor devices are also found in military applications, aviation, automobiles, industrial controllers, and office equipment.

[0003] As devices decrease in size and operate at higher frequencies, heat generation in semiconductor components becomes a greater design consideration. Many semiconductor packages include a heat sink connected to the semiconductor die. The heat sink helps dissipate heat from the semiconductor die by spreading the heat energy over a larger surface area. The heat sink also improves thermal handling capabilities by allowing external heat dissipation components to be attached through the heat sink.

[0004] A heat sink is typically a separate component positioned above a semiconductor die or package. The heat sink typically forms part of a housing that surrounds and extends over the components of the semiconductor package. One problem with prior art heat sinks is that the housing can trap heat within the package and cause thermal management issues for other enclosed components. Therefore, a need exists for an improved heat sink for semiconductor packages. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figures 1a-1c illustrates a semiconductor wafer having a plurality of semiconductor dies separated by saw streets;

[0006] Figures 2a-2h Illustrated is the formation of a semiconductor package having a windowed heat sink;

[0007] Figure 3 A double-sided embodiment is illustrated;

[0008] Figures 4a-4c An embodiment with a separation reinforcement is illustrated;

[0009] Figures 5a-5c An embodiment suitable for packages and semiconductor dies having different heights is illustrated;

[0010] Figures 6a-6c illustrates an embodiment using a grid of openings instead of a single window; and

[0011] Figure 7a and Figure 7bThe diagram illustrates the integration of the package into an electronic device. DETAILED DESCRIPTION

[0012] In the following description, the present invention is described in one or more embodiments with reference to the accompanying drawings, wherein like reference numerals represent like or similar elements. Although the present invention has been described in terms of the best mode for carrying out the purposes of the present invention, it will be appreciated by those skilled in the art that the present invention is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims and their equivalents, which are supported by the following disclosure and the accompanying drawings. As used herein, the term "semiconductor die" refers to both the singular and plural forms of the word, and thus may refer to both a single semiconductor device and a plurality of semiconductor devices.

[0013] Semiconductor devices are typically manufactured using two complex fabrication processes: front-end fabrication and back-end fabrication. Front-end fabrication involves forming multiple die on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electronic components, which are electrically connected to form a functional circuit. Active electronic components, such as transistors and diodes, control the flow of current. Passive electrical components, such as capacitors, inductors, and resistors, create the relationship between voltage and current necessary to perform the circuit's functions.

[0014] Back-end manufacturing refers to cutting or dividing the finished wafer into individual semiconductor dies and packaging the semiconductor dies for structural support, electrical interconnection and environmental isolation. In order to divide the semiconductor dies, the wafer is scored and broken along the non-functional areas of the wafer (called saw streets or scribe lines). The wafer is divided using a laser cutting tool or a saw blade. After division, the individual semiconductor dies are mounted to a package substrate, which includes pins or contact pads for interconnection with other system components. The contact pads formed above the semiconductor die are then connected to the contact pads within the package. Electrical connections can be made with conductive layers, bumps, stud bumps, conductive glue, bonding wires or other suitable interconnect structures. Encapsulant or other molding compounds are deposited above the package to provide physical support and electrical insulation. The finished package is then inserted into the electrical system, and the functionality of the semiconductor device is made available to other system components.

[0015] Figure 1aA semiconductor wafer 100 is shown having a base substrate material 102, such as silicon, germanium, aluminum phosphide, aluminum arsenide, gallium arsenide, gallium nitride, indium phosphide, silicon carbide, or other bulk semiconductor material. A plurality of semiconductor dies or components 104 are formed on the wafer 100 separated by passive inter-die wafer regions or saw streets 106, as described above. The saw streets 106 provide dicing areas to separate the semiconductor wafer 100 into individual semiconductor dies 104. In one embodiment, the semiconductor wafer 100 has a width or diameter of 100-450 millimeters (mm).

[0016] Figure 1b A cross-sectional view of a portion of a semiconductor wafer 100 is shown. Each semiconductor die 104 has a back or inactive surface 108 and an active surface 110 that contains analog or digital circuitry implemented as active devices, passive devices, conductive layers, and dielectric layers formed within or above the die and electrically interconnected according to the electrical design and function of the die. For example, the circuitry may include one or more transistors, diodes, and other circuit elements formed within the active surface 110 to implement analog or digital circuitry, such as a digital signal processor (DSP), ASIC, MEMS, memory, or other signal processing circuitry. The semiconductor die 104 may also include integrated passive devices (IPDs) such as inductors, capacitors, and resistors for RF signal processing. The back side 108 of the semiconductor wafer 100 may undergo an optional back grinding operation having a mechanical grinding or etching process to remove a portion of the base material 102 and reduce the thickness of the semiconductor wafer 100 and the semiconductor die 104.

[0017] Conductive layer 112 is formed over active surface 110 using PVD, CVD, electrolytic plating, electroless plating, or other suitable metal deposition processes. Conductive layer 112 includes one or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), or other suitable conductive materials. Conductive layer 112 operates as a contact pad electrically connected to the circuitry on active surface 110.

[0018] Conductive layer 112 may be formed as contact pads disposed side-by-side at a first distance from an edge of semiconductor die 104, such as Figure 1b. Alternatively, conductive layer 112 can be formed with contact pads offset in multiple rows such that a first row of contact pads is disposed at a first distance from the die edge and a second row of contact pads alternating with the first row is disposed at a second distance from the die edge. Conductive layer 112 represents the last conductive layer formed over semiconductor die 104, having contact pads for subsequent electrical interconnection to a larger system. However, one or more intermediate conductive and insulating layers formed between the actual semiconductor devices on active surface 110 and contact pads 112 for signal routing may be present.

[0019] Conductive bump material is deposited over conductive layer 112 using evaporation, electrolytic plating, electroless plating, ball drop or screen printing processes. The bump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder and combinations thereof with an optional flux solution. For example, the bump material can be eutectic Sn / Pb, high-lead solder or lead-free solder. The bump material is bonded to conductive layer 112 using a suitable attachment or bonding process. In some embodiments, the bump material is reflowed by heating the material above its melting point to form conductive balls or bumps 114. In one embodiment, conductive bump 114 is formed over an under-bump metallization (UBM) layer having a wetting layer, a barrier layer and an adhesion layer. Conductive bump 114 can also be compression bonded or thermocompressed to conductive layer 112. Conductive bump 114 represents a type of interconnect structure that can be formed over conductive layer 112 for electrical connection to the substrate. The interconnect structure may also use bond wires, conductive paste, stud bumps, micro bumps, or other electrical interconnects.

[0020] exist Figure 1c In the embodiment of the present invention, semiconductor wafer 100 is singulated through saw streets 106 using a saw blade or laser cutting tool 118 into individual semiconductor die 104. Individual semiconductor die 104 can be inspected and electrically tested to identify KGDs after singulation.

[0021] Figures 2a-2h The formation of a semiconductor package 150 having a semiconductor die 104 and a windowed heat spreader is illustrated. Figure 2a 1 is a partial cross-sectional view of a substrate 152 used as a basis for manufacturing package 150. Substrate 152 can be a unit substrate separated from a larger panel, or remain part of a larger substrate panel. Hundreds or thousands of packages are typically formed in a single substrate panel, or on separate unit substrates on a single carrier using the same steps described herein.

[0022] Substrate 152 includes one or more insulating layers 154 interleaved with one or more conductive layers 156. In one embodiment, insulating layer 154 is a core insulating board with conductive layer 156 patterned on the top and bottom surfaces, such as a copper-clad laminate substrate. Conductive layer 156 also includes conductive vias electrically coupled vertically through insulating layer 154. Substrate 152 can include any number of conductive and insulating layers interleaved above each other. A solder mask or passivation layer can be formed on either side of substrate 152. In other embodiments, any suitable type of substrate or lead frame can be used for substrate 152.

[0023] Any components desired to achieve the intended functionality of package 150 are mounted to or disposed over substrate 152 and are electrically connected to conductive layer 156. Substrate 152 has two major surfaces: a top surface 157 and a bottom surface 159. Components may be mounted to top surface 157 and bottom surface 159 in any suitable configuration. Figure 2b , fabrication of package 150 on substrate 152 begins with surface mounting semiconductor die 104 , discrete components 164 , and sub-package 170 on top surface 157 using, for example, any suitable pick and place method or equipment.

[0024] Semiconductor die 104 represents any one or more electrical components that will be thermally connected or coupled to an overlying heat sink for thermal management in subsequent manufacturing steps. Subpackage 170 and discrete components 164 represent components that do not need to be directly coupled to a heat sink. Subpackage 170 can be any suitable package of any suitable type or configuration. Subpackage 170 can also be a bare die similar to semiconductor die 104, or only discrete components 164 can be used without a separate subpackage 170.

[0025] The illustrated sub-package 170 includes a substrate 172 similar to substrate 152, a die 174 similar to die 104, an encapsulant 176, and solder bumps 178 similar to bumps 114. Additional dies, sub-packages, or discrete components may be mounted on top surfaces 157 or 159 as desired to achieve the intended functionality of package 150. Discrete components 164, such as resistors, capacitors, inductors, transistors, or diodes, are mounted on top surface 157 using solder paste or other suitable attachment and connection mechanisms. The solder paste is reflowed between the terminals of the discrete components 164 and the contact pads of the conductive layer 156 on top surface 157. Bumps 114 and 178 are typically reflowed in the same process step to physically and electrically connect the die 104 and sub-package 170, respectively, to substrate 152.

[0026] exist Figure 2c15. In one embodiment, the adhesion layer 200 is disposed on the top surface 157. In one embodiment, the adhesion layer 200 is dispensed using a nozzle in a ring that completely surrounds the perimeter of the substrate 152. In other embodiments, the adhesion layer 200 is discontinuous around the perimeter of the substrate 152.

[0027] exist Figure 2d and Figure 2e , an adhesion layer 200 is used to attach a reinforcement ring 202 to the substrate 152. The reinforcement ring 202 forms a ring around the semiconductor die 104, the sub-package 170, and the discrete components 168. In the illustrated embodiment, the reinforcement ring 202 extends completely to all edges of the substrate 152 and continuously around the perimeter of the substrate. In other embodiments, the substrate 152 may extend beyond the boundaries of the reinforcement ring 202, and additional components may be provided on the substrate outside the boundaries of the reinforcement ring. The reinforcement ring 202 sits directly on the adhesion layer 200 and has approximately the same shape. In embodiments where the reinforcement ring 202 does not follow the perimeter of the substrate 152, the adhesion layer 200 is modified to follow the shape of the reinforcement ring accordingly. The adhesion layer 200 secures the reinforcement ring 202 to the substrate 152. The reinforcement ring 202 physically supports the final package to reduce warping.

[0028] A thermal interface material (TIM) 204 is disposed on back surface 108 of semiconductor die 104. TIM 204 facilitates heat transfer from semiconductor die 104 to an overlying heat sink that will be placed in a subsequent manufacturing step. TIM 204 may be applied in any suitable pattern and may not completely cover back surface 108.

[0029] Figure 2e A plan view of the reinforcement ring 202 on the substrate 152 is shown, revealing a plurality of discrete components 164 and a pair of sub-packages 170a and 170b. Any suitable combination of components may be used. In one embodiment, the sub-package 170a is Figure 2d 1 , while sub-package 170b is a bare die similar to die 104. This plan view shows how stiffener ring 202 extends completely around the components on substrate 152. Stiffener ring 202 may also be discontinuous.

[0030] exist Figure 2f and Figure 2gIn the embodiment, heat sink 210 is disposed on reinforcement ring 202. Heat sink 210 is cut from sheet metal using mechanical or laser cutting, or formed using any other suitable process. The material used for heat sink 210 is copper, steel, aluminum, titanium, carbon, mixtures thereof, alloys thereof, or any other suitable metal or non-metal heat sink material. Heat sink 210 includes an outer perimeter that is approximately the same as the outer perimeter of ring 202. Before the heat sink is disposed on reinforcement ring, an adhesive layer 214 is disposed on heat sink 210, reinforcement ring 202, or both. Adhesion layer 214 mechanically secures heat sink 210 to reinforcement ring 202. The height of reinforcement ring 202 is selected so that the bottom surface of heat sink 210 contacts and presses down on TIM 204.

[0031] Heat sink 210 compresses TIM 204 into a thin layer. TIM 204 enhances thermal conductivity from semiconductor die 104 to heat sink 210. Generally, heat sink 210 is pressed down until it physically contacts semiconductor die 104. TIM 204 fills the slight gap between heat sink 210 and back surface 108 of semiconductor die 104, which exists due to roughness and other imperfections in the surface. All of the following embodiments generally also include their respective heat sinks that are in physical contact with their respective die or other electrical component being cooled.

[0032] Heat sink 210 includes a window 212 formed as an opening completely through the heat sink above sub-package 170 . Figure 2g A plan view is shown with subpackages 170a and 170b completely contained within the footprint of window 212. Having subpackage 170 completely within the footprint of window 212 allows the subpackage to be taller than would normally be allowed if heat sink 210 completely filled the area within stiffener ring 202. However, if the subpackage is shorter than stiffener ring 202, subpackage 170 can extend below heat sink 210 and outside the footprint of window 212. Heat sink 210 extends over discrete component 168, but discrete component 168 can also be located within the footprint of window 212. Window 212 is formed in any suitable shape, primarily based on the layout of the underlying components that do not need to be in direct thermal contact with heat sink 210.

[0033] Solder bumps 220 are applied to the bottom surface 159 of the substrate 152 by any suitable method, similar to Figure 1b Application of the bump 114 completes Figure 2h The package 150 in the package 150. The bump 220 is subsequently used to mount the package 150 into a larger electrical system. In some embodiments, multiple packages 150 are formed into a panel and then separated from each other after completion.

[0034] The semiconductor die 104 is thermally connected to the heat sink 210 through the TIM 204, which allows thermal energy to be efficiently removed from the semiconductor die. A heat sink component can later be attached to the top surface of the heat sink 210 opposite the semiconductor die 104 to increase the exposed surface area and thereby increase the rate of heat transfer to the surrounding environment. An opening 212 in the heat sink 210 allows thermal energy from the sub-package 170 to escape from the package 150 to the surrounding environment. The sub-package 170 may not require thermal management via a heat sink, but if it is completely enclosed in a complete bubble formed between the substrate 152, the stiffener 202 and the heat sink 210 without the window 212, it can still generate enough heat to cause a failure. The window 212 allows heat within the package 150 to escape faster than if the heat sink 210 completely enclosed the package. Any components that require a heat sink component or heat sink are placed below the heat sink 210, while components that do not require a heat sink are placed below or near the window 212 to allow convection out of the package 150.

[0035] Figure 3 Shown is a double-sided semiconductor package 222. Semiconductor package 222 is similar to package 150, with the primary difference being a semiconductor die 224 and discrete components 226 disposed on bottom surface 159. Any combination of components, including active or passive discrete components, integrated circuits, and sub-packages, may be mounted on bottom surface 159.

[0036] Figures 4a-4c An embodiment is illustrated in which the reinforcement ring comprises bars passing through the package to separate the electrical components. Figure 4a The reinforcement 230 in the embodiment includes an annular reinforcement 230a and a compartment reinforcement 230b formed together as a single continuous piece of material. The compartment reinforcement 230b creates two different compartments for the electrical components on the substrate 152. Alternatively, as Figure 4b As shown in FIG, in addition to the annular reinforcement 210, separate compartment reinforcements 240 may be added.

[0037] The compartment stiffeners help further support the resulting semiconductor package against warping and reduce the amount of heat that reaches sub-package 170 from semiconductor die 104 via radiation or convection. Figure 4c A cross section of a package 250 with a compartment reinforcement is shown. The compartment reinforcement 240 with the annular reinforcement 210 and the reinforcement 230 with the built-in compartment reinforcement 230b both have substantially the same cross-sectional appearance, except for the cross section where there is a gap between the reinforcements 210 and 240. As an example, Figure 4c Also illustrated is a higher sub-package 170c extending into the window 212 and above the top surface of the heat sink 210. Any embodiment may include the higher sub-package 170c.

[0038] In some cases, the height of semiconductor die 104 is not suitable for a flat heat spreader disposed on annular stiffener 202 of a particular thickness available. Figures 5a-5c Various embodiments are shown to accommodate semiconductor dies 104 of varying heights. Figure 5a In FIG. 2 , package 260 includes semiconductor die 104 a that is taller than annular stiffener 202 , and thus heat spreader 210 will not be able to lie flat on the annular stiffener.

[0039] Therefore, a heat sink 262 is used that has a cavity 264 formed on its bottom surface. Cavity 264 has a depth into heat sink 262 that is approximately equal to or slightly greater than the height difference between semiconductor die 104 a and annular stiffener 202. When heat sink 262 is placed on annular stiffener 202, a slight gap exists between the horizontal surface of cavity 264 and back surface 108 of semiconductor die 104 a to accommodate TIM 266.

[0040] Figure 5b Another cross-sectional view of the same package 260 is shown. Figure 5b The cross section extends only through the heat sink 262 and not through the window 212. The two semiconductor dies 104a and 104b are coupled to the heat sink 262 for cooling. As previously discussed, the semiconductor die 104a is taller than the annular stiffener 202, and the cavity 264 is used to accommodate the excess height. On the other hand, the semiconductor die 104b is short enough that the heat sink 210 would be too far away to make a satisfactory thermal coupling. The heat sink 262 is formed with a protrusion 268 to lower the bottom surface of the heat sink above the semiconductor die 104b. The protrusion 268 brings the bottom surface of the heat sink 262 downward so that the gap between the heat sink and the semiconductor die 104b is suitable for the TIM 266 to thermally connect the two. The protrusion 268 has a slanted edge, but the edge can also be vertical, like the cavity 264. Similarly, the cavity 264 can have a slanted edge instead of the vertical edge shown in the figure.

[0041] Figure 5cA package 270 with a heat sink 272 is shown. Package 270 includes the same two semiconductor dies 104a and 104b from package 260, where die 104a is taller than annular stiffener 202 and die 104b is shorter than annular stiffener 202. Heat sink 272 is stamped or otherwise bent, shaped, or formed to include regions 274 and 280 that have different heights compared to the rest of the heat sink, which is approximately flush with the top of annular stiffener 202. Region 274 is stamped from the top to lower the bottom surface toward semiconductor die 104b. Because heat sink 272 starts with a uniform thickness and no material is removed during the stamping process, the thickness of the heat sink within region 274 remains approximately equal to the thickness around region 274. By moving region 274 downward, a concave surface 276 is formed on the top of heat sink 272 and a convex surface 278 is formed on the bottom of the heat sink.

[0042] Likewise, a region 280 is stamped from the bottom to raise the surface of the heat sink 272 and form a convex surface 282 on the top and a concave surface 284 on the bottom. The stamping is performed before the heat sink 272 is mounted on the package 270. The stamping bends the metal of the heat sink 272 into the shape shown or other suitable shapes. Any number and height of semiconductor dies, semiconductor packages, or other suitable devices can be formed by Figures 5a-5c Any of the methods disclosed in making thermal contact with a heat sink.

[0043] Figures 6a-6c Various embodiments are illustrated in which a grid is formed through the heat sink rather than a window. The grid comprises a plurality of smaller openings or holes formed through the heat sink rather than one larger window. Figure 6a In FIG. 1 , heat spreader 290 includes a grid 291 formed over sub-packages 170 a and 170 b. Grid 291 includes a plurality of diamond-shaped openings 292 . Figure 6b The heat sink 293 in FIG. 2 includes a grid 294 containing a plurality of square openings 295 . Figure 6c The heat sink 296 in the embodiment includes a grid 297 having a plurality of circular openings 298. Openings 292, 295 and 298 can be formed by mechanical drilling, mechanical punching, laser cutting or other suitable processes. Any shape of opening can be used to form the grid. Forming the grid above the sub-packages 170a and 170b helps to physically protect the top of the sub-package from external contact while still allowing heat convection to leave the package. The heat sink material retained between the grid holes provides physical protection while the grid holes allow heat convection to leave the package.

[0044] Figure 7a and Figure 7b The incorporation of the above-described semiconductor package (eg, package 150 ) into an electronic device 300 is illustrated. Figure 7aThe diagram shows a partial cross-section of package 150 mounted on a printed circuit board (PCB) or other substrate 302 as part of an electronic device 300. Bumps 220 are reflowed onto a conductive layer 304 of PCB 302 to physically attach and electrically connect package 150 to the PCB. In other embodiments, heat pressing or other suitable attachment and connection methods are used. In some embodiments, an adhesive layer or underfill layer is used between package 150 and PCB 302. Semiconductor die 104, discrete components 168, and sub-package 170 are electrically coupled to each other and to conductive layer 304 via substrate 152 and bumps 220.

[0045] Figure 7b The diagram shows an electronic device 300 including a PCB 302 having a plurality of semiconductor packages, including package 150, mounted on a surface thereof. Depending on the application, electronic device 300 may have a single type of semiconductor package or multiple types of semiconductor packages. Electronic device 300 may be a stand-alone system that uses semiconductor packages to perform one or more electrical functions. Alternatively, electronic device 300 may be a subcomponent of a larger system. For example, electronic device 300 may be part of a tablet computer, a cellular phone, a digital camera, a communication system, or other electronic device. Electronic device 300 may also be a graphics card, a network interface card, or another signal processing card that is plugged into a computer. The semiconductor package may include a microprocessor, memory, an ASIC, logic circuits, analog circuits, RF circuits, discrete active or passive devices, or other semiconductor die or electrical components.

[0046] exist Figure 7b In FIG. 1 , PCB 302 provides a general substrate for structural support and electrical interconnection of semiconductor packages mounted on the PCB. Conductive signal traces 304 are formed on or within the surface of PCB 302 using evaporation, electrolytic plating, electroless plating, screen printing, or other suitable metal deposition processes. Signal traces 304 provide electrical communication between the semiconductor package, mounted components, and other external systems or components. Traces 304 also provide power and ground connections to the semiconductor package as needed.

[0047] In some embodiments, the semiconductor device has two packaging levels. The first level of packaging is a technique for mechanically and electrically attaching the semiconductor die to an intermediate substrate. The second level of packaging involves mechanically and electrically attaching the intermediate substrate to the PCB 302. In other embodiments, the semiconductor device may have only the first level of packaging, where the die is mechanically and electrically mounted directly to the PCB 302.

[0048] For illustrative purposes, several types of first-level packages are shown on PCB 302, including a wire bond package 346 and a flip chip 348. Additionally, several types of second-level packages, including a ball grid array (BGA) 350, a bump chip carrier (BCC) 352, a land grid array (LGA) 356, a multi-chip module (MCM) 358, a quad flat no-lead package (QFN) 360, a quad flat package 362, and an embedded wafer level ball grid array (eWLB) 364, are shown mounted on PCB 302 along with package 150. Conductive traces 304 electrically couple the various packages and components disposed on PCB 302 to package 150, thereby providing access to components within package 150 to other components on the PCB.

[0049] Depending on the system requirements, any combination of semiconductor packages configured with any combination of first-level and second-level packaging types, as well as other electronic components, can be connected to PCB 302. In some embodiments, electronic device 300 includes a single attached semiconductor package, while other embodiments require multiple interconnected packages. By combining one or more semiconductor packages on a single substrate, manufacturers can incorporate prefabricated components into electronic devices and systems. Because semiconductor packages include complex functionality, electronic devices can be manufactured using less expensive components and streamlined manufacturing processes. The resulting devices are less likely to fail and are less expensive to manufacture, resulting in reduced consumer costs.

[0050] While one or more embodiments of the present invention have been described in detail, those skilled in the art will appreciate that modifications and adaptations may be made to the embodiments without departing from the scope of the invention as set forth in the following claims.

Claims

1. A method for manufacturing a semiconductor device, comprising: providing a substrate; disposing a first semiconductor die over the substrate; Disposing a sub-package above the substrate; dispensing an adhesion layer over the substrate; disposing an annular stiffener over the substrate surrounding the first semiconductor die and the sub-package, a first portion of the adhesion layer extending from the substrate to the annular stiffener; providing a compartment stiffener separate from the annular stiffener on the substrate between the first semiconductor die and the subpackage, wherein a height of the separate compartment stiffener is equal to a height of the stiffener, and wherein a second portion of the adhesive layer extends from the substrate to the compartment stiffener; and A heat sink is disposed over the stiffener, wherein the heat sink is thermally coupled to the first semiconductor die, and wherein the heat sink includes an opening over the subpackage.

2. The method according to claim 1, wherein: The subpackage is disposed entirely within the footprint of the opening. 3 . The method of claim 1 , further comprising disposing a second semiconductor die over the substrate and thermally coupled to a heat sink, wherein a height of the first semiconductor die is different than a height of the second semiconductor die. 4 . The method of claim 1 , further comprising forming a cavity or a protrusion on the heat spreader above the first semiconductor die.

5. A method for manufacturing a semiconductor device, comprising: providing a substrate; disposing a reinforcement member over the first surface of the substrate; disposing a first electrical component over the first surface of the substrate; forming a heat sink including an opening formed therein; and A heat sink is disposed above the reinforcement member, and an opening is disposed above the first electrical component. 6 . The method of claim 5 , further comprising disposing a second electrical component over a second surface of the substrate opposite the first surface. 7 . The method of claim 5 , further comprising disposing a second electrical component over the substrate and thermally coupled to a heat sink.

8. The method according to claim 5, wherein: The reinforcement comprises a compartment reinforcement.

9. The method of claim 5, further comprising disposing a compartment reinforcement member over the first surface of the substrate, wherein The reinforcement member is an annular reinforcement member arranged around the compartment reinforcement member.

10. The method of claim 5, further comprising forming a protrusion or a cavity in the heat sink by: Provide the sheet of material; and Bend or shape the sheet of material to include protrusions or cavities.

11. A semiconductor device comprising: substrate; a first semiconductor die disposed over the substrate; a sub-package disposed above the substrate; a stiffener disposed over the substrate surrounding the first semiconductor die and the sub-package; and A heat sink is disposed over the stiffener, wherein the heat sink is thermally coupled to the first semiconductor die, and wherein the heat sink includes an opening over the subpackage.

12. The semiconductor device according to claim 11, wherein The subpackage is disposed entirely within the footprint of the opening. 13 . The semiconductor device of claim 11 , further comprising a second semiconductor die disposed over the substrate and thermally coupled to the heat sink, wherein a height of the first semiconductor die is different than a height of the second semiconductor die.

14. The semiconductor device according to claim 11, wherein The heat sink includes a cavity or a protrusion.

15. The semiconductor device according to claim 11, wherein The reinforcement comprises a compartment reinforcement.

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