High-Density, 3D Packaging Integrated Optical Transceiver Chip Architecture

Abstract

The present disclosure relates to a high-density, three-dimensional packaged integrated optical transceiver chip architecture in the field of integrated optoelectronic technology. The high-density, three-dimensional packaged integrated optical transceiver chip architecture includes an optical signal emission layer, a substrate, an optical signal reception layer, and a printed circuit board that are stacked; wherein, a first matching circuit chip is provided on the surface of the optical signal reception layer away from the substrate for amplifying and processing the signal received and detected by the optical signal reception layer; the printed circuit board is provided with a groove for embedding the first matching circuit chip into the groove to connect with the printed circuit board.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated optoelectronics, and more specifically, to a high-density, three-dimensional packaged integrated optical transceiver chip architecture. Background Art

[0002] Optical fiber communication networks have the characteristics of large bandwidth, low loss, and anti-electromagnetic interference, meeting the social communication requirements for large capacity and high speed. The optical communication network has also developed well with the growth of communication requirements, and the optical module, as a part of the optical fiber communication network, also plays a crucial role.

[0003] With the rapid development of fields such as artificial intelligence, Internet of Things big data, and cloud computing, the traffic of information transmission and processing has also shown an explosive growth, which has led to a rapid expansion of the scale of data centers as the medium for information storage and exchange. Therefore, the future optical information communication network has an increasingly urgent demand for communication conversion interfaces with a rate of 1.6T and higher, and at the same time, the communication energy consumption of the optoelectronic conversion interface is also increasing rapidly. The demand for optical modules with higher communication density and lower loss is imminent, and how to achieve a larger scale integration of optoelectronic devices will also be the key issue. Summary of the Invention

[0004] In view of this, the present disclosure provides a high-density, three-dimensional packaged integrated optical transceiver chip architecture, including an optically-signal emitting layer, a substrate, an optically-signal receiving layer, and a printed circuit board that are stacked; wherein, a first matching circuit chip is provided on the surface of the optically-signal receiving layer away from the substrate, and is used for amplifying and processing the signals received and detected by the optically-signal receiving layer; the printed circuit board is provided with a groove for embedding the first matching circuit chip into the groove to be connected with the printed circuit board.

[0005] According to an embodiment of the present disclosure, the high-density, three-dimensional packaged integrated optical transceiver chip architecture further includes: a laser chip, provided on the surface of the optically-signal emitting layer away from the substrate, and is used for emitting a first optical signal; a second matching circuit chip, provided on the surface of the optically-signal emitting layer away from the substrate, and is used for driving the first optical signal for modulation.

[0006] According to an embodiment of the present disclosure, the laser chip and the second matching circuit chip are packaged on the optically-signal emitting layer through a ball grid array; the first matching circuit chip is packaged on the optically-signal receiving layer through a ball grid array; the area of the optically-signal receiving layer without the first matching circuit chip is packaged on the printed circuit board through a ball grid array.

[0007] According to an embodiment of the present disclosure, the optical signal emission layer includes: a first input coupling structure, a first wavelength division multiplexer, an electro-optic modulator, a first waveguide, and a first output coupling structure disposed in the optical signal emission layer; a first optical signal is input to the first input coupling structure and the first wavelength division multiplexer, and after being modulated by the electro-optic modulator, the modulated first optical signal is input to an output optical fiber through the first waveguide and the first output coupling structure; the optical signal reception layer includes: a photodetector, a second waveguide, a second wavelength division multiplexer, and a second input coupling structure disposed in the optical signal reception layer; the optical signal input through the input optical fiber is input to the photodetector through the second input coupling structure, the second wavelength division multiplexer, and the second waveguide for photoelectric conversion to obtain the signal carried by the second optical signal.

[0008] According to an embodiment of the present disclosure, the high-density, three-dimensional packaged integrated optical transceiver chip architecture further includes: a through hole penetrating the optical signal emission layer, the substrate, and the optical signal reception layer.

[0009] According to an embodiment of the present disclosure, the first input coupling structure, the first output coupling structure, and the second input coupling structure include grating coupling structures.

[0010] According to an embodiment of the present disclosure, the printed circuit board includes: a plurality of holes disposed in a groove.

[0011] According to an embodiment of the present disclosure, the printed circuit board further includes: an optical fiber port provided with an optical fiber input end and an optical fiber output end; wherein the optical fiber input end is connected to the input optical fiber, and the optical fiber output end is connected to the optical fiber output end.

[0012] According to an embodiment of the present disclosure, the solder material of the ball grid array includes a tin-lead alloy or copper.

[0013] According to an embodiment of the present disclosure, the depth of the groove is the same as the height of the first matching circuit chip.

[0014] According to an embodiment of the present disclosure, based on a common substrate, optoelectronic functional elements for optical modulation and detection are grown and co-packaged at both ends of the substrate, improving the integration degree of optoelectronic functional elements on the unit horizontal area. At the same time, the flip-chip packaging method greatly shortens the length of optoelectronic interconnection, reduces parasitic effects, improves the signal transmission rate of the photonic chip, and also reduces energy consumption.

[0015] According to an embodiment of the present disclosure, the optical functional unit for optical signal reception and detection is embedded and inverted on the groove of the printed circuit board, effectively reducing the overall size of the chip. Description of the Drawings

[0016] Through the following description of the embodiments of the present disclosure with reference to the drawings, the above and other objects, features, and advantages of the present disclosure will become clearer. In the drawings:

[0017] Figure 1 A structural diagram schematically showing the high - density, three - dimensional packaged integrated optical transceiver chip architecture of an embodiment of the present disclosure;

[0018] Figure 2 A schematic diagram schematically showing a ball grid array package;

[0019] Description of reference numerals:

[0020] 1. Optical signal emission layer; 2. Optical signal reception layer; 3. Substrate; 4. Second matching circuit chip; 5. First matching circuit chip; 6. Laser chip; 7. Printed circuit board; 8. Through - hole; 9. Output optical fiber; 10. Input optical fiber; 11. Optical fiber port; 12. Ball grid array; 13. Hole. Detailed implementation manners

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well - known systems and technologies are omitted to avoid unnecessarily confusing the concepts of the present disclosure.

[0022] The terms used herein are merely for describing specific embodiments and are not intended to limit the present disclosure. The terms "including", "comprising", etc. used herein indicate the presence of features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0023] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0024] In the case of using expressions such as "at least one of A, B, and C", generally, it should be interpreted according to the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include, but is not limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0025] Figure 1 A structural diagram schematically showing the high - density, three - dimensional packaged integrated optical transceiver chip architecture of an embodiment of the present disclosure.

[0026] As Figure 1 shown, the present disclosure provides a high-density, three-dimensional packaged integrated optical transceiver chip architecture, including an optical signal transmitting layer 1, a substrate 3, an optical signal receiving layer 2, and a printed circuit board 7 which are stacked; wherein, a first matching circuit chip 5 is provided on the surface of the optical signal receiving layer away from the substrate, and is used for amplifying and processing the signal received and detected by the optical signal receiving layer; the printed circuit board is provided with a groove for embedding the first matching circuit chip into the groove to connect with the printed circuit board.

[0027] In an embodiment of the present disclosure, both ends of the substrate are subjected to a homogeneous or heterogeneous integrated processing technology to grow chips on a CMOS-compatible platform. Specifically, by designing that the optical signal transmitting layer and the optical signal receiving layer share the same substrate to form an optical transceiver module, and a groove is provided on the printed circuit board, and the optical transceiver module is semi-embedded and buried on the printed circuit board, effectively reducing the overall volume of the optical transceiver module. And by designing a vertical distribution structure, more optical functional devices can be integrated per unit horizontal area, with high integration density, and at the same time, the problem of optoelectronic thermal crosstalk is effectively limited, meeting the construction requirements of optoelectronic conversion nodes in future 1.6T and higher speed optical communication networks.

[0028] According to an embodiment of the present disclosure, the high-density, three-dimensional packaged integrated optical transceiver chip architecture further includes: a laser chip 6, provided on the surface of the optical signal transmitting layer away from the substrate, and is used for emitting a first optical signal; a second matching circuit chip 4, provided on the surface of the optical signal transmitting layer away from the substrate, and is used for driving the first optical signal for modulation.

[0029] In an embodiment of the present disclosure, the laser chip and the second matching circuit chip are provided on the optical signal transmitting layer, and the integration density is higher when the unit horizontal area remains unchanged.

[0030] Figure 2 Schematically shows a schematic diagram of a ball grid array package.

[0031] As Figure 1 and Figure 2 shown, according to an embodiment of the present disclosure, the laser chip and the second matching circuit chip are packaged on the optical signal transmitting layer through a ball grid array 12; the first matching circuit chip is packaged on the optical signal receiving layer through a ball grid array 12; the area of the optical signal receiving layer without the first matching circuit chip is packaged on the printed circuit board through a ball grid array 12.

[0032] In an embodiment of the present disclosure, by using the ball grid array packaging technology to flip-chip mount on the optical signal emission layer and the optical signal reception layer, ultra-compact electrical interconnection is achieved, effectively shortening the length of the optoelectronic interconnection, reducing the parasitic effect, achieving high signal transmission efficiency in this chip while reducing energy consumption; avoiding the traditional packaging method of wire bonding, which results in a longer optoelectronic interconnection length and increases losses.

[0033] According to an embodiment of the present disclosure, the optical signal emission layer includes: a first input coupling structure, a first wavelength division multiplexer, an electro-optic modulator, a first waveguide, and a first output coupling structure provided in the optical signal emission layer.

[0034] The first optical signal is input to the first input coupling structure and the first wavelength division multiplexer, and after being modulated by the electro-optic modulator, the modulated first optical signal is input to the output optical fiber 9 through the first waveguide and the first output coupling structure.

[0035] The optical signal reception layer includes: a photodetector, a second waveguide, a second wavelength division multiplexer, and a second input coupling structure provided in the optical signal reception layer.

[0036] The optical signal input through the input optical fiber 10 is input to the photodetector through the second input coupling structure, the second wavelength division multiplexer, and the second waveguide for photoelectric conversion to obtain the signal carried by the second optical signal. Among them, the first input coupling structure, the first output coupling structure, and the second input coupling structure include grating coupling structures.

[0037] According to an embodiment of the present disclosure, the printed circuit board further includes: an optical fiber port 11 provided with an optical fiber input end and an optical fiber output end; wherein the optical fiber input end is connected to the input optical fiber, and the optical fiber output end is connected to the optical fiber output end.

[0038] In an embodiment of the present disclosure, the first optical signal emitted by the laser chip is input to the first input coupling structure and the first wavelength division multiplexer, and after being modulated by the electro-optic modulator, the modulated first optical signal is input to the output optical fiber through the first waveguide and the first output coupling structure, and the modulated signal is output through the optical fiber output end.

[0039] The second optical signal input externally is input to the input optical fiber through the optical fiber input end, and then input to the photodetector through the second input coupling structure, the second wavelength division multiplexer, and the second waveguide for photoelectric conversion, demodulating the radio frequency signal carried by the second optical signal to obtain the converted electrical signal, and effectively amplifying the electrical signal through the first matching circuit chip, providing power through the printed circuit board and supporting the transmission of the electrical signal.

[0040] According to an embodiment of the present disclosure, the grating coupling structure is a vertical grating coupling structure.

[0041] In an embodiment of the present disclosure, by adopting a vertical grating coupling structure, it is convenient for on-wafer detection during the growth and preparation of a photonic chip. Moreover, the vertical grating coupling structure is easy to manufacture, which can shorten the manufacturing processes of the optical emission module and the optical reception module. At the same time, it has higher flexibility and a larger alignment tolerance, which is more conducive to the emission and reception efficiency of light in the optical module.

[0042] According to an embodiment of the present disclosure, the first matching circuit chip includes a transimpedance amplifier chip, and the transimpedance amplifier chip is connected to a photodetector; the second matching circuit chip is connected to an electro-optic modulator to drive the electro-optic modulator to modulate the first optical signal.

[0043] According to an embodiment of the present disclosure, the high-density, three-dimensional packaged integrated optical transceiver chip architecture further includes: a via hole 8, which penetrates through the optical signal emission layer, the substrate, and the optical signal reception layer.

[0044] In an embodiment of the present disclosure, the optical signal emission layer and the optical signal reception layer are electrically interconnected through edge via holes; and except for one end of the optical signal emission layer close to the optical fiber port and one end of the optical signal reception layer close to the optical fiber port, the other three ends of the optical signal emission layer and the other three ends of the optical signal reception layer are interconnected by metal traces through these via holes, and electrical connection with the printed circuit board is achieved through these via holes.

[0045] According to an embodiment of the present disclosure, the optical signal emission layer includes a stacked buried oxide layer, a waveguide layer, and a cladding layer, wherein the buried oxide layer is connected to the substrate, and the cladding layer includes multiple metal traces; the first input coupling structure, the first wavelength division multiplexer, the electro-optic modulator, the first waveguide, and the first output coupling structure are all disposed in the waveguide layer.

[0046] The optical signal reception layer includes a stacked buried oxide layer, a waveguide layer, and a cladding layer, wherein the buried oxide layer is connected to the substrate, and the cladding layer includes multiple metal traces; the photodetector, the second waveguide, the second wavelength division multiplexer, and the second input coupling structure are all disposed in the waveguide layer.

[0047] According to an embodiment of the present disclosure, the substrate includes a silicon substrate.

[0048] The thickness of the buried oxide layer is 2 μm - 4 μm, the thickness of the waveguide layer is 200 nm, and the material of the waveguide layer can be silicon, or other materials can be hetero-integrated to prepare active photonic devices and passive photonic devices.

[0049] According to an embodiment of the present disclosure, the printed circuit board includes: a plurality of holes 13, which are disposed in a groove.

[0050] In an embodiment of the present disclosure, by designing a plurality of holes in the groove, the heat generation problem of the first matching circuit chip embedded in the groove is solved. At the same time, the heat concentration problem caused by high-density optoelectronic integration is effectively solved, and effective heat dissipation ensures the longer-term stable operation of the chip.

[0051] According to an embodiment of the present disclosure, the welding material of the ball grid array includes a tin-lead alloy solder ball, a copper pillar, or other micro bump metals.

[0052] According to an embodiment of the present disclosure, the depth of the groove is the same as the height of the first matching circuit chip.

[0053] In an embodiment of the present disclosure, by controlling the perfect match between the depth of the groove and the height of the first matching circuit chip, the first matching circuit is perfectly embedded in the printed circuit board, realizing a vertical structure distribution and improving the integration degree.

[0054] Those skilled in the art can understand that the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly recited in the present disclosure. In particular, without departing from the spirit and teachings of the present disclosure, the features recited in the various embodiments and / or claims of the present disclosure can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present disclosure.

[0055] The above describes the embodiments of the present disclosure. However, these embodiments are only for illustrative purposes and not for limiting the scope of the present disclosure. Although the embodiments are described separately above, this does not mean that the measures in each embodiment cannot be used in combination advantageously. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and all such substitutions and modifications should fall within the scope of the present disclosure.

Claims

1. A high-density, three-dimensional packaged integrated optical transceiver chip architecture, characterized in that It includes a light signal emitting layer, a substrate, a light signal receiving layer, and a printed circuit board that are stacked; Among them, a first matching circuit chip is provided on the surface of the light signal receiving layer away from the substrate, and is used to amplify and process the signal received and detected by the light signal receiving layer; The printed circuit board is provided with a groove for embedding the first matching circuit chip into the groove to be connected to the printed circuit board; It further includes: A laser chip is disposed on the surface of the light signal emitting layer away from the substrate and is used to emit a first light signal; A second matching circuit chip is disposed on the surface of the light signal emitting layer away from the substrate and is used to drive the modulation of the first light signal.

2. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 1, characterized in that The laser chip and the second matching circuit chip are encapsulated on the light signal emitting layer through a ball grid array; The first matching circuit chip is encapsulated on the light signal receiving layer through a ball grid array; The area of the light signal receiving layer without the first matching circuit chip is encapsulated on the printed circuit board through a ball grid array.

3. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 1, wherein The light signal emitting layer includes: A first input coupling structure, a first wavelength division multiplexer, an electro-optic modulator, a first waveguide, and a first output coupling structure disposed in the light signal emitting layer; The first light signal is input into the first input coupling structure and the first wavelength division multiplexer, and after being modulated by the electro-optic modulator, the modulated first light signal is input into the output optical fiber through the first waveguide and the first output coupling structure; The light signal receiving layer includes: A photodetector, a second waveguide, a second wavelength division multiplexer, and a second input coupling structure disposed in the light signal receiving layer; The second light signal input through the input optical fiber is input into the photodetector through the second input coupling structure, the second wavelength division multiplexer, and the second waveguide for photoelectric conversion to obtain the signal carried by the second light signal.

4. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 1, characterized in that, It further includes: A through hole that penetrates the light signal emitting layer, the substrate, and the light signal receiving layer.

5. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 3, characterized in that The first input coupling structure, the first output coupling structure, and the second input coupling structure include grating coupling structures.

6. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 1, characterized in that The printed circuit board includes: a plurality of holes disposed in the groove.

7. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 3, characterized in that The printed circuit board further includes: an optical fiber port provided with an optical fiber input end and an optical fiber output end; Among them, the optical fiber input end is connected to the input optical fiber, and the optical fiber output end is connected to the output optical fiber.

8. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 2, characterized in that The welding material of the ball grid array includes tin-lead alloy or copper.

9. The high-density, three-dimensional packaged integrated optical transceiver chip architecture according to claim 1, characterized in that, The depth of the groove is the same as the height of the first matching circuit chip.

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