Epitaxial layer transfer method and manufacturing method of light-emitting chip

Abstract

The invention relates to an epitaxial layer transfer method and a manufacturing method of a light-emitting chip, and the epitaxial layer transfer method of the light-emitting chip comprises the steps: forming a semi-solid first etching type glue layer on a bearing substrate, and forming a semi-solid second etching type glue layer on an epitaxial layer borne by a substrate; the thickness of at least one of the first etching type adhesive layer and the second etching type adhesive layer is reduced through etching; the first etching type adhesive layer and the second etching type adhesive layer which are subjected to the thinning treatment are subjected to alignment press fit; and removing the substrate. The etching type adhesive layer can be etched to any required thickness by controlling the etching rate and the etching time, so that the etching type adhesive layer which is thin enough can be manufactured. Bonding is carried out after the etching type adhesive layer is thinned, the overall thickness of a bonding layer formed after the first etching type adhesive layer and the second etching type adhesive layer are pressed can be reduced, laser stripping in the follow-up manufacturing process is facilitated, residues of the adhesive layers on the light-emitting face of the light-emitting chip can be reduced, and the light-emitting effect of the light-emitting chip is optimized.