Silicon-based OLED self-induction brightness adjustment display structure and manufacturing method thereof

Abstract

The invention discloses a silicon-based OLED self-induction brightness adjustment display structure and a manufacturing method thereof, and relates to the technical field of silicon-based OLEDs, the silicon-based OLED self-induction brightness adjustment display structure comprises a light induction module, a first organic light-emitting layer and a second organic light-emitting layer, and the light induction module and a control circuit of the first organic light-emitting layer are electrically connected with a control module; the light sensing module is used for detecting the light intensity of the external environment in real time, when the light intensity of the external environment is large, the first organic light-emitting layer and the second organic light-emitting layer are both in the on state, and when the light intensity of the external environment is small, the second organic light-emitting layer is in the on state, and the first organic light-emitting layer is in the off state. The display definition of the screen watched by the human eyes is effectively improved, the display brightness value of the screen is adjusted according to the ambient brightness, the damage to the human eyes is reduced, meanwhile, the power consumption used in the environment without high brightness is reduced, due to the arrangement of the two organic light-emitting layers, when one layer fails, the other layer can be used, and the service life is long.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon-based OLED, and in particular to a silicon-based OLED self-sensing brightness adjustment display structure and a manufacturing method thereof. Background Art

[0002] Since the brightness of silicon-based OLEDs varies greatly when used in different environments, the display brightness needs to be increased in strong light environments to be visible, but such high brightness is not needed in dim environments. If the brightness is fixed, it will cause power consumption loss and waste of brightness. However, the existing method changes the screen display brightness by controlling different driving voltages or currents through an external circuit board, which to a certain extent sacrifices driving power consumption to take into account the brightness issue. Similarly, the use of OLEDs made of organic light-emitting materials under continuously increasing driving high brightness has another serious impact, which is a reduction in lifespan. Currently, the short lifespan of organic displays is a shortcoming of this type of product.

[0003] Therefore, people are in urgent need of a silicon-based OLED self-sensing brightness adjustment display structure that can automatically adjust brightness and has a long service life. Summary of the invention

[0004] The purpose of the present invention is to provide a silicon-based OLED self-sensing brightness adjustment display structure and a manufacturing method thereof, so as to solve the problems existing in the above-mentioned prior art. By setting two layers of organic light-emitting layers, one of which is fixedly illuminated and the other is turned on or off according to the intensity of the external ambient light, the purpose of automatic brightness adjustment is achieved. At the same time, after one layer fails, the other layer can continue to be used, thereby improving the service life.

[0005] To achieve the above-mentioned purpose, the present invention provides the following solution: The present invention provides a silicon-based OLED self-sensing brightness adjustment display structure, including a light sensing module for detecting the brightness of external ambient light, a first organic light-emitting layer that is turned on or off according to the intensity of the ambient light, and a second organic light-emitting layer that is fixedly illuminated, and the control circuits of the light sensing module and the first organic light-emitting layer are electrically connected to the control module.

[0006] Preferably, the silicon-based OLED self-sensing brightness adjustment display structure further includes a CMOS IC layer, the first organic light-emitting layer is arranged close to the CMOS IC layer, and the second organic light-emitting layer is arranged away from the CMOS IC layer.

[0007] Preferably, a SiO2 film is provided on one side of the CMOS IC layer close to the first organic light-emitting layer for wrapping the tungsten plug position of the CMOS IC layer. 2 layer.

[0008] Preferably, the silicon-based OLED self-sensing brightness adjustment display structure further includes a first BM isolation layer surrounding the outer peripheral side of the AA region, and the first BM isolation layer is arranged corresponding to the first organic light-emitting layer and the second organic light-emitting layer.

[0009] Preferably, the silicon-based OLED self-sensing brightness adjustment display structure also includes an anode metal layer, a first cathode layer and a second cathode layer, and the first cathode layer, the first organic light-emitting layer, the anode metal layer, the second organic light-emitting layer and the second cathode layer are arranged in sequence.

[0010] Preferably, the first organic light-emitting layer includes an electron injection layer, an electron transport layer, a red, green, and blue organic light-emitting layer, a hole transport layer, and a hole injection layer stacked in sequence; the second organic light-emitting layer includes a hole injection layer, a hole transport layer, a red, green, and blue organic light-emitting layer, an electron transport layer, and an electron injection layer stacked in sequence; the hole injection layer of the first organic light-emitting layer and the hole injection layer of the second organic light-emitting layer are arranged close to the anode metal layer.

[0011] Preferably, the second cathode layer comprises a stacked cathode material layer and an aluminum oxide film layer, and the cathode material layer is disposed close to the second organic light-emitting layer.

[0012] Preferably, a color filter layer is provided on a side of the aluminum oxide film layer away from the second organic light-emitting layer.

[0013] Preferably, the silicon-based OLED self-sensing brightness adjustment display structure further includes a second BM isolation layer surrounding the outer peripheral side of the AA region, and the second BM isolation layer is arranged on a side of the aluminum oxide film layer away from the second organic light-emitting layer.

[0014] The present invention also provides a method for manufacturing the above silicon-based OLED self-sensing brightness adjustment display structure, which is characterized by comprising the following steps:

[0015] S1: Make CMOS IC layer;

[0016] S2: Production of SiO based on COMS IC layer 2 Layer, SiO 2 The layer wraps the tungsten plug and forms the first cathode layer;

[0017] S3: forming a first BM isolation layer on the outer peripheral side of the AA region based on the first cathode layer;

[0018] S4: Based on the first cathode layer, a first organic light-emitting layer, an anode metal layer, a second organic light-emitting layer, and a second cathode layer are sequentially formed, and a first BM isolation layer is located between the first cathode layer and the second cathode layer;

[0019] S5: manufacturing a color filter layer and a second BM isolation layer based on the second cathode layer.

[0020] Compared with the prior art, the present invention mainly achieves the following technical effects:

[0021] The light sensing module is used to detect the ambient light intensity in real time. When the ambient light intensity is high, both the first and second organic light-emitting layers are in the on state, thereby increasing the brightness of the silicon-based OLED. When the ambient light intensity is low, the second organic light-emitting layer is in the on state, while the first organic light-emitting layer is in the off state, thereby reducing the brightness of the silicon-based OLED. This can effectively improve the display clarity of the screen when viewed by the human eye, and adjust the display brightness value of the screen according to the ambient brightness to reduce damage to the human eye. At the same time, it can reduce power consumption in environments that do not require high brightness. In addition, the setting of two layers of organic light-emitting layers means that if one layer fails, there is still one layer that can be used. Compared with the silicon-based OLED with only one organic light-emitting layer, the two layers of organic light-emitting layers make the service life of the silicon-based OLED longer.

[0022] Compared with the prior art, other solutions of the present invention have achieved the following technical effects:

[0023] By providing the first BM isolation layer and the second BM isolation layer, lateral light leakage at the edge of the AA region can be prevented, and at the same time, the first BM isolation layer realizes the isolation of the first cathode layer and the second cathode layer.

[0024] The common anode OLED structure is adopted to improve the compactness of the structure. When only a single layer is emitting light, the current value of the anode can be controlled to reduce power consumption. At the same time, the common anode structure can achieve the brightness of single-layer and double-layer light emission by controlling the size of the driving current to meet different demand standards. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0026] Figure 1 This is a schematic structural diagram of a silicon-based OLED self-sensing brightness adjustment display structure according to an embodiment of the present invention;

[0027] Figure 2 This is a schematic structural diagram of a silicon-based OLED with a silicon-based OLED self-sensing brightness adjustment display structure in an embodiment of the present invention when the protective layer above the CF process is not displayed;

[0028] Figure 3This is a control flow chart of the first organic light-emitting layer in an embodiment of the present invention;

[0029] Among them, 1. CMOS IC layer; 2. first cathode layer; 3. first BM isolation layer; 4. first organic light-emitting layer; 5. anode metal layer; 6. second organic light-emitting layer; 7. cathode material layer; 8. aluminum oxide film layer; 9. second BM isolation layer; 10. R color film; 11. B color film; 12. G color film. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] The purpose of the present invention is to provide a silicon-based OLED self-sensing brightness adjustment display structure and a manufacturing method thereof. By setting up two layers of organic light-emitting layers, one of which is fixedly illuminated and the other is turned on or off according to the intensity of the external ambient light, the purpose of automatic brightness adjustment is achieved. At the same time, after one layer fails, the other layer can continue to be used, thereby increasing the service life.

[0032] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0033] Please refer to Figures 1 to 3As shown, a silicon-based OLED self-sensing brightness adjustment display structure is provided, including a light sensing module for detecting the brightness of the external ambient light, a first organic light-emitting layer 4 that is turned on or off according to the ambient light intensity, and a second organic light-emitting layer 6 that is fixedly luminous, the first organic light-emitting layer 4 and the second organic light-emitting layer 6 are arranged along the display direction of the silicon-based OLED, the light sensing module and the control circuit of the first organic light-emitting layer 4 are electrically connected to the control module, the light sensing module can use a photosensitive sensor, and the light sensor is designed to sense the light brightness setting threshold, triggering the control module to control the opening and closing of the first layer cathode, the structure uses the light sensing module to detect the external ambient light intensity in real time, when the external ambient light intensity When the brightness of the silicon-based OLED is relatively large, the first organic light-emitting layer 4 and the second organic light-emitting layer 6 are both in the on state, thereby increasing the brightness of the silicon-based OLED. When the ambient light intensity is relatively small, the second organic light-emitting layer 6 is in the on state, while the first organic light-emitting layer 4 is in the off state, thereby reducing the brightness of the silicon-based OLED. This can effectively improve the display clarity of the screen when viewed by the human eye, and adjust the display brightness value of the screen according to the ambient brightness to reduce damage to the human eye. At the same time, it can reduce power consumption when used in environments that do not require high brightness. Moreover, the setting of two layers of organic light-emitting layers means that if one layer fails, there is still one layer that can be used. Compared with the silicon-based OLED with only one organic light-emitting layer, the two layers of organic light-emitting layers make the service life of the silicon-based OLED longer.

[0034] The silicon-based OLED self-sensing brightness adjustment display structure also includes a CMOS IC layer 1. Since the second organic light-emitting layer 6 is a fixed light-emitting organic light-emitting layer, the first organic light-emitting layer 4 is arranged close to the CMOS IC layer 1, and the second organic light-emitting layer 6 is arranged away from the CMOS IC layer 1. This is beneficial to reducing the number of other design layers between the fixed light-emitting organic light-emitting layer and the screen, preventing too many other design layers from affecting the brightness of the fixed light-emitting organic light-emitting layer, and reducing the power consumption of the fixed light-emitting organic light-emitting layer.

[0035] A SiO2 layer is provided on one side of the CMOS IC layer 1 close to the first organic light emitting layer 4 for wrapping the tungsten plug position of the CMOS IC layer 1. 2 Layer, SiO 2 The layer is used to isolate the tungsten plug position from the first organic light-emitting layer 4, and can be connected to the anode layer that is subsequently manufactured.

[0036] The silicon-based OLED self-sensing brightness adjustment display structure also includes a first BM isolation layer 3 surrounding the outer peripheral side of the AA area. The first BM isolation layer 3 is arranged corresponding to the first organic light-emitting layer 4 and the second organic light-emitting layer 6. The first BM isolation layer 3 can prevent the first organic light-emitting layer 4 from leaking light laterally at the edge of the AA area.

[0037] The silicon-based OLED self-sensing brightness adjustment display structure also includes an anode metal layer 5, a first cathode layer 2 and a second cathode layer. The first cathode layer 2, the first organic light-emitting layer 4, the anode metal layer 5, the second organic light-emitting layer 6 and the second cathode layer are arranged in sequence. This arrangement allows the first organic light-emitting layer 4 and the second organic light-emitting layer 6 to form an OLED structure with a common anode, thereby improving the compactness of the structure. When only a single layer emits light, the current value of the anode can be controlled to be reduced to reduce power consumption. At the same time, the common anode structure can achieve the brightness of single-layer and double-layer light emission by controlling the size of the driving current to meet different demand standards.

[0038] The first BM isolation layer 3 is located between the first cathode layer 2 and the second cathode layer to isolate the first cathode layer 2 from the second cathode layer, while ensuring that when the second cathode layer is manufactured, there will be no height difference in the cathode ring area (corresponding to the area of ​​the first BM isolation layer 3) causing collapse.

[0039] Specifically, the first organic light-emitting layer 4 includes an electron injection layer, an electron transport layer, a red, green, and blue organic light-emitting layer, a hole transport layer, and a hole injection layer stacked in sequence; the second organic light-emitting layer 6 includes a hole injection layer, a hole transport layer, a red, green, and blue organic light-emitting layer, an electron transport layer, and an electron injection layer stacked in sequence; the hole injection layer of the first organic light-emitting layer 4 and the hole injection layer of the second organic light-emitting layer 6 are arranged close to the anode metal layer 5.

[0040] In this embodiment, the second cathode layer includes a stacked cathode material layer 7 and an aluminum oxide film layer 8. The cathode material layer 7 is disposed close to the second organic light-emitting layer 6, and the aluminum oxide film layer 8 can provide a sealing protection effect for the layers inside it.

[0041] A color filter layer is provided on the side of the aluminum oxide film layer 8 away from the second organic light-emitting layer 6 to improve the color gamut purity. In this embodiment, the color filter layer is formed by 10 pixels of R color filter, 11 pixels of B color filter, and 12 pixels of G color filter arranged at intervals.

[0042] The silicon-based OLED self-sensing brightness adjustment display structure also includes a second BM isolation layer 9 surrounding the outer peripheral side of the AA area. The second BM isolation layer 9 is arranged on the side of the aluminum oxide film layer 8 away from the second organic light-emitting layer 6. The second BM isolation layer 9 can prevent the second organic light-emitting layer 6 from leaking light laterally at the edge of the AA area. The first BM isolation layer 3 and the second BM isolation layer 9 are both black structures.

[0043] The present invention also provides a method for manufacturing a silicon-based OLED self-sensing brightness adjustment display structure, which is characterized by comprising the following steps:

[0044] S1: Making CMOS IC layer 1. After cleaning the silicon substrate, the CMOS IC layer 1 is made on the silicon substrate by using photolithography and etching processes in sequence, wherein a tungsten plug is made and connected to the anode layer to serve as a switch for individually controlling the hole transmission of the anode of the corresponding sub-pixel;

[0045] S2: Production of SiO by CVD based on CMOS IC layers 2 Layer, SiO 2 The layer wraps around the tungsten plug, specifically SiO 2 The method of making the layer is as follows: using spin coating process, exposure process and development process to make a blocking tungsten plug photoresist pattern in sequence, and performing directional etching by dry method to remove the SiO 2 The SiO layer is etched away, leaving only the tungsten plug blocked by the photoresist. 2 layer, and finally adopt the plasma process to use oxygen and CF4 to reduce the remaining photoresist; use a high-precision mask to evaporate the cathode material to make the first cathode layer 2, the cathode material of the first cathode layer 2 is a mixture of magnesium, silver and lutetium, and the combination of magnesium, silver and lutetium provides excellent electron injection and transmission capabilities, which helps to improve the electro-optical conversion efficiency of OLED;

[0046] S3: Based on the first cathode layer 2, a first BM isolation layer 3 is formed by evaporating a BM material on the outer peripheral side of the AA region using a mask;

[0047] S4: Based on the first cathode layer 2, a first organic light-emitting layer 4, an anode metal layer 5, a second organic light-emitting layer 6, and a second cathode layer are sequentially manufactured, and the first BM isolation layer 3 is located between the first cathode layer 2 and the second cathode layer; the first organic light-emitting layer 4 and the second organic light-emitting layer 6 are manufactured by: using a high-precision mask to sequentially vapor-deposit organic materials, and respectively complete the electron injection layer, the electron transport layer, the red, green, and blue organic light-emitting layer, the hole transport layer, and the hole injection layer; the first organic light-emitting layer 4 and the second organic light-emitting layer 6 can also be manufactured by inkjet, and the red, green, and blue phosphorescent or fluorescent light-emitting materials are manufactured to the corresponding sub-pixels; the anode metal layer 5 is manufactured by: sequentially PVD vapor-depositing ITO and AL materials; the second cathode layer is manufactured by: using a high-precision mask to vapor-deposit cathode materials (a mixture of magnesium, silver, and lutetium) to obtain a cathode material layer 7, and using trimethylaluminum and water as materials and atomic layer deposition technology to manufacture an aluminum oxide film layer 8;

[0048] S5: A color filter layer and a second BM isolation layer 9 are manufactured based on the second cathode layer. The manufacturing method of the color filter layer is as follows: at the anode CD position, a spin coating process, an exposure process and a development process are sequentially used to manufacture the R color film 10; at the anode CD position adjacent to the R color film 10, a spin coating process, an exposure process and a development process are sequentially used to manufacture the B color film 11; at the anode CD position adjacent to the B color film 11, a spin coating process, an exposure process and a development process are sequentially used to manufacture the G color film 12; a second BM isolation layer 9 is manufactured by vapor-depositing BM material on the outer peripheral side of the AA area.

[0049] After making the color film layer, if a color filter layer is needed, a thin layer of color filter layer can be made to improve the color purity and color gamut range.

[0050] After the color filter layer and the second BM isolation layer 9 are manufactured, a protective layer in the CF process needs to be manufactured on the two.

[0051] The thickness data of each layer in this embodiment are: SiO 2 The layer thickness is The thickness of the first cathode layer 2 is This thin thickness improves its transparency and retains sufficient electron transmission rate; the thickness of the first BM isolation layer 3 is 3810-5330nm; the thickness of the first organic light-emitting layer 4 is 1800-2400nm, and its thickness is adjusted to be thinner when the hole transport layer and the hole injection layer of the first organic light-emitting layer 4 are made, as the first microcavity structure semi-reflective and semi-transmissive layer, while retaining its hole transport efficiency and electron blocking layer function; the thickness of the anode metal layer 5 is The thickness of the second organic light-emitting layer 6 is 2000-2900nm. At the same time, the hole injection layer and the hole transport layer of the second organic light-emitting layer 6 are thicker than the first layer to enhance their reflectivity and form a reflective layer of the top microcavity with the anode. The thickness of the cathode material layer 7 of the second cathode layer is Improve its electron injection rate and serve as a semi-reflective and semi-transparent layer of the top microcavity structure; the thickness of the aluminum oxide film layer 8 of the second cathode layer is The thickness of the R color film 10 is 900-1000nm; the thickness of the B color film 11 is 900-1000nm; the thickness of the G color film 12 is 900-1000nm, which improves the color gamut NTSC by 40%; the thickness of the second BM isolation layer 9 is 1000-1200nm.

[0052] Adaptive changes made according to actual needs are all within the protection scope of the present invention.

[0053] It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, the embodiments should be regarded as exemplary and non-restrictive from any point of view, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention. Any reference numerals in the claims should not be regarded as limiting the claims involved.

[0054] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A silicon-based OLED self-sensing brightness adjustment display structure, characterized in that: It includes a light sensing module for detecting the brightness of the external ambient light, a first organic light-emitting layer that is turned on or off according to the ambient light intensity, and a second organic light-emitting layer that emits fixed light. The control circuits of the light sensing module and the first organic light-emitting layer are electrically connected to the control module.

2. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 1, characterized in that: The silicon-based OLED self-sensing brightness adjustment display structure further includes a CMOS IC layer, the first organic light-emitting layer is arranged close to the CMOS IC layer, and the second organic light-emitting layer is arranged far away from the CMOS IC layer.

3. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 2, characterized in that: A SiO2 layer is disposed on one side of the CMOS IC layer close to the first organic light-emitting layer and is used to wrap the tungsten plug position of the CMOS IC layer.

4. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 1, characterized in that: The silicon-based OLED self-sensing brightness adjustment display structure further includes a first BM isolation layer surrounding the outer peripheral side of the AA region, and the first BM isolation layer is arranged corresponding to the first organic light-emitting layer and the second organic light-emitting layer.

5. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 1, characterized in that: The silicon-based OLED self-sensing brightness adjustment display structure also includes an anode metal layer, a first cathode layer and a second cathode layer, and the first cathode layer, the first organic light-emitting layer, the anode metal layer, the second organic light-emitting layer and the second cathode layer are arranged in sequence.

6. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 5, characterized in that: The first organic light-emitting layer includes an electron injection layer, an electron transport layer, a red, green, and blue organic light-emitting layer, a hole transport layer, and a hole injection layer stacked in sequence; the second organic light-emitting layer includes a hole injection layer, a hole transport layer, a red, green, and blue organic light-emitting layer, an electron transport layer, and an electron injection layer stacked in sequence; the hole injection layer of the first organic light-emitting layer and the hole injection layer of the second organic light-emitting layer are arranged close to the anode metal layer.

7. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 5, characterized in that: The second cathode layer includes a stacked cathode material layer and an aluminum oxide film layer, and the cathode material layer is disposed close to the second organic light-emitting layer.

8. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 7, characterized in that: A color filter layer is disposed on a side of the aluminum oxide film layer away from the second organic light-emitting layer.

9. The silicon-based OLED self-sensing brightness adjustment display structure according to claim 7, characterized in that: The silicon-based OLED self-sensing brightness adjustment display structure further includes a second BM isolation layer surrounding the outer periphery of the AA region, and the second BM isolation layer is arranged on a side of the aluminum oxide film layer away from the second organic light-emitting layer.

10. A method for manufacturing a silicon-based OLED self-sensing brightness adjustment display structure, characterized in that: The following steps are involved: S1: Make CMOSIC layer; S2: Produce a SiO2 layer based on the COMSIC layer, the SiO2 layer wraps the tungsten plug, and makes the first cathode layer; S3: forming a first BM isolation layer on the outer peripheral side of the AA region based on the first cathode layer; S4: Based on the first cathode layer, a first organic light-emitting layer, an anode metal layer, a second organic light-emitting layer, and a second cathode layer are sequentially formed, and a first BM isolation layer is located between the first cathode layer and the second cathode layer; S5: manufacturing a color filter layer and a second BM isolation layer based on the second cathode layer.

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