Manufacturing of light-emitting device and light-emitting device

Abstract

The invention relates to a method for producing a light-emitting device. The method comprises providing a structured conversion element having individual conversion sections arranged next to one another for radiation conversion. The conversion element has a carrier with a recess, which contains a conversion material. The hollow part of the carrier exists in a manner of penetrating through the hollow part. Each conversion section is formed by a cutout of the carrier, which cutout contains the conversion material. The method further comprises forming, on one side of the conversion element, a group of emitters arranged on the conversion element, said group of emitters being composed of radiation-emitting semiconductor chips, wherein a radiation-emitting semiconductor chip is present in each case in the region of the conversion section. Another step is to form a stabilizing layer in the lateral direction of and between the radiation-emitting semiconductor chips. The invention further relates to a light-emitting device.

Description

Technical Field

[0001] The invention relates to a method for producing a light emitting device and a light emitting device. Background Art

[0002] Said patent application claims the priority of German patent application 10 2022 119 365.9, the disclosure content of which is hereby incorporated herein by reference.

[0003] Pixelated light-emitting devices are known, which can be used in the automotive field in the headlights of adaptive lighting systems (AFS, adaptive front-lighting system). Such light-emitting devices can have individually addressable light-emitting pixels, thereby enabling individual dynamic lighting scenes. In a feasible design scheme, an LED device (light-emitting diode) is used, which includes emitters in the form of LED chips positioned side by side and conversion elements applied to each emitter for radiation conversion. The scheme is suitable for low-resolution FWL concepts (forward lighting). The emitter can be a sapphire flip chip with side mirror reflection. The conversion element can also be side mirror reflection and glued to the LED chip. In the design scheme, lateral radiation emission may occur at the transition between the emitter and the conversion element. In addition, reflection only occurs at the vertically extending side walls of the mirror reflection of the emitter and the conversion element. Therefore, the construction may be associated with efficiency losses. Summary of the invention

[0004] The object of the present invention is to provide a solution for an improved lighting device.

[0005] This object is achieved by the features of the independent claim. Further advantageous embodiments of the invention are given in the dependent claims.

[0006] According to one aspect of the present invention, a method for manufacturing a light-emitting device is proposed. The method includes providing a structured conversion element, which has separate conversion sections arranged side by side for radiation conversion. The conversion element has a carrier with a recessed portion, and the recessed portion contains a conversion material. The recessed portion of the carrier exists in the form of a through-recessed portion. The conversion sections are respectively formed by the recessed portions of the carrier containing the conversion material. In addition, the method includes forming an emitter group composed of radiation-emitting semiconductor chips arranged on the conversion element on one side of the conversion element, wherein the radiation-emitting semiconductor chips are respectively present in the region of the conversion sections. In addition, a stabilization layer is formed at least laterally and between the radiation-emitting semiconductor chips.

[0007] The method provides the feasibility of manufacturing an efficient pixelated light-emitting device with radiation-emitting pixels arranged side by side with high reliability. The pixels of the light-emitting device can be formed by a conversion section of a conversion element and a semiconductor chip emitting radiation arranged in the region of the conversion section belonging to the emitter group. The emitter group is on one side of the conversion element. The radiation emission in the light-emitting operation of the light-emitting device can be carried out via the opposite side of the conversion element. This side can form the emission side or front side of the light-emitting device. In the light-emitting operation, the semiconductor chip emitting radiation can generate primary light radiation, by means of which the conversion section belonging to the conversion element can be transmitted, and the conversion section can convert the primary light radiation at least partially into secondary light radiation. In this way, the corresponding light radiation can be emitted from the emission side of the light-emitting device. The light-emitting device can be manufactured so that the semiconductor chips emitting radiation can be controlled individually from each other for generating radiation. In this regard, the light-emitting device can have individually controllable pixels, thereby realizing individualized dynamic lighting scenes.

[0008] The steps of the method can be performed in the above-mentioned order, that is, providing a structured conversion element, then forming an emitter group on the conversion element, and then forming a stabilization layer. It is feasible to determine the corresponding orientation of the pixels of the light-emitting device and the spacing between the pixels of the light-emitting device with high precision by providing a conversion element with a conversion section and forming an emitter group with a semiconductor chip emitting radiation in the region of the conversion section. Here, a constant and relatively small spacing between the pixels can be achieved, which can achieve seamless lighting. In the conversion element used, each conversion section is surrounded by a carrier laterally, so that the carrier can form an optical barrier between the conversion section and the pixel. In this way, optical crosstalk between pixels can be suppressed, and a high contrast between pixels can be achieved. The conversion sections of the conversion element are connected to each other via the carrier. As a result, the heat energy generated during radiation conversion can be laterally conducted from the conversion section and distributed on the conversion element, which can achieve efficient heat dissipation. Due to the characteristics, an efficient operation mode of the light-emitting device is feasible. With the help of a stabilization layer formed at least laterally and between the semiconductor chips emitting radiation, a high mechanical stability can be given to the light-emitting device. The stabilization layer can also contribute to the optical separation and, depending on the configuration of the luminous device, can be used for radiation redirection, which is beneficial for an efficient operation.

[0009] Further possible details and embodiments which are conceivable for the method and for a lighting device which can be produced according to the method are described in detail below.

[0010] The lighting device may be used in a headlight of an adaptive lighting system of a vehicle.

[0011] In the luminous operation of the luminous device, mixed radiation including primary light radiation and secondary light radiation can be emitted from the emission side of the luminous device. The primary light radiation and the secondary light radiation can be blue light radiation and yellow light radiation, so that overall white light radiation can be emitted.

[0012] The conversion sections of the conversion element can be arranged side by side in a common plane, which can be the main extension plane of the conversion element. The conversion sections can also be arranged side by side in the form of rows and columns in a matrix. The conversion element can have two opposite main sides, that is, the sides with the largest lateral dimensions respectively. The side of the conversion element on which the emitter group is formed can be one of the main sides. Radiation emission can be performed via the main side opposite to the conversion element. This side can form the emission side or the front side of the light-emitting device. The recessed portion of the carrier in the form of a through recessed portion or a through hole can extend between the main sides of the conversion element.

[0013] The conversion material contained in the recess of the carrier can have luminescent material particles. The luminescent material particles can be ceramic luminescent material particles. With the aid of the luminescent material particles, radiation conversion can be caused. In addition, the conversion material can have an adhesive material, via which the luminescent material particles can be fixed in the recess of the carrier. The adhesive material can be a matrix material or a plastic material, in which the luminescent material particles can be arranged or embedded.

[0014] The carrier of the conversion element can be designed to be radiation-impermeable or light-impermeable. The impermeability can at least relate to the light radiation generated by the light-emitting device during operation. For this purpose, the carrier can be composed of a radiation-impermeable or light-impermeable material. The impermeability can also be achieved by a reflective design of the carrier. The carrier can be composed, for example, of silicon, ceramics, silicone filled with reflective particles or scattering particles (for example TiO2 particles), plastic, plastic with a reflective coating, or glass with a reflective coating. The reflective coating can be a metal coating.

[0015] The carrier of the conversion element can be made of silicon as described above. As a result, the conversion element can be provided in a reliable and precise manner using the manufacturing and structuring processes used in the semiconductor field. In addition, efficient heat dissipation is possible during operation of the light-emitting device. In addition to silicon, the carrier can have another material, such as a metal coating material.

[0016] In another embodiment, providing a conversion element includes the following. Here, a carrier having the following design is provided, in which the carrier first has a cavity. A further step is to introduce the conversion material into the cavity of the carrier and to remove at least the material of the carrier, so that the cavity of the carrier forms a recess of the carrier containing the conversion material. As a result, the geometry of the conversion element having the conversion section can be determined with high precision.

[0017] As mentioned above, the conversion material used can be a binding material or matrix material containing luminescent material particles. In this case, the conversion material can be introduced into the cavities of the carrier, for example, by spraying, metering or dispensing or using a doctor blade. It is also possible to introduce pure luminescent material particles into the cavities of the carrier and then fix the luminescent material particles by precipitating a binding material, for example aluminum oxide, into the cavities.

[0018] In order to form the recess of the carrier from the cavity, a large-area material removal can be performed, for example, by grinding. It is also possible to remove material in a selective form, for example by etching, in the region of the cavity of the carrier. In this way, the conversion element can have a recess in the region of the conversion section on the side provided for the emitter group, in the region of which a semiconductor chip emitting radiation can be provided. The semiconductor chip emitting radiation can have a smaller lateral dimension than the recess of the conversion element. The recess of the conversion element can be formed in the following way: the carrier protrudes from the conversion material. In the region of the recess of the conversion element, the carrier can also have a shape that surrounds the conversion material.

[0019] The conversion element may be provided in such a way that beam guidance or beam shaping of the emitted optical radiation is possible via the cutouts of the carrier. The following configurations are conceivable for this purpose.

[0020] In another embodiment, the conversion material is introduced into the cavity of the carrier so that the cavity is partially filled with the conversion material. In this case, the conversion material can be in a lower or bottom-side subregion of the cavity and the upper or other subregions of the cavity can be free of conversion material. In a corresponding manner, the recess of the carrier protruding from the cavity can be filled with conversion material in a subregion and free of conversion material in another or emission-side subregion. Beam guidance can be achieved in the empty subregions.

[0021] Furthermore, beam guidance can be achieved in such a way that, in addition to or as an alternative to partially filling the cavity, deposition is performed after the conversion material is introduced into the cavity of the carrier. With regard to the described design, the conversion material can be introduced into the cavity of the carrier in the form of a bonding material or matrix material containing luminescent material particles, and the luminescent material particles can be precipitated toward the bottom or bottom surface of the cavity. The deposition can be caused by the influence of gravity over time or by centrifugation. In this way, the conversion material introduced into the cavity can have a density of luminescent material particles that increases toward the bottom of the cavity. In a corresponding manner, the light-emitting device can be implemented so that in the recess of the carrier extending from the cavity and thus at the conversion section of the conversion element, there is a density of luminescent material particles that increases toward the semiconductor chip emitting radiation. In the sub-region on the emission side, the recess can have only or substantially only the matrix material and no or substantially no luminescent material particles, so that beam guidance can be achieved in the sub-region.

[0022] In another embodiment, the cavity of the carrier has a bottom surface and a cross-sectional shape that widens in a direction away from the bottom surface. As a result, a conversion element can be provided with a cutout that protrudes from the cavity of the carrier, the cutout having an at least partially widened cross-sectional shape in a direction away from the side provided for the emitter group. In this embodiment, the cutout of the carrier can form a reflector structure that causes beam shaping.

[0023] With regard to beam guidance or beam shaping, according to another embodiment, it is proposed that a conversion element is provided including a carrier having a reflective coating, which is present at least in the region of a recess of the carrier. The reflective coating that can reflect radiation during operation of the light-emitting device can be a metal coating. In order to form the reflective coating, a coating process can be performed after providing a carrier having a cavity. After this, the reflective coating outside the cavity of the carrier can be removed, whereby the emission side or front side of the light-emitting device can have no or substantially no reflective coating. A high contrast between the pixels of the light-emitting device can be achieved. In addition, after the recess is formed by the cavity of the carrier, another coating process can be performed so that the recess is completely provided with a reflective coating, and the reflective coating that is also produced on the conversion material or on the conversion section can be subsequently removed from the conversion material or the conversion section. The described method can be considered when selective material removal is performed in the region of the cavity in order to form the recess by the cavity of the carrier.

[0024] The radiation-emitting semiconductor chip of the emitter group may have a front side, a back side opposite the front side, and lateral sidewalls extending between the front side and the back side. Furthermore, the radiation-emitting semiconductor chip may have contacts via which the semiconductor chip can be contacted and supplied with power. The contacts may be present at the back side of the semiconductor chip.

[0025] The light-emitting device can be manufactured so that the light-emitting device can be contacted and powered on the back side of the light-emitting device opposite to the emission side or front side. The contact can be made via a contact on the back side of the radiation-emitting semiconductor chip of the emitter group or via a contact structure formed on the back side. In this context, the following design solutions can be considered.

[0026] In another embodiment, the radiation-emitting semiconductor chip has a contact at the back side, and the emitter group is formed on the conversion element, so that the opposite front side of the radiation-emitting semiconductor chip faces the conversion element. In this embodiment, the contact at the back side of the semiconductor chip itself can be used as a contact of the light-emitting device. Alternatively, the following is also possible.

[0027] In another embodiment, the contact structure connected to the contact of the radiation-emitting semiconductor chip is formed in the region of the side or the back side of the radiation-emitting semiconductor chip facing away from the conversion element. In this embodiment, the contact structure can be used to contact the light-emitting device. The contact structure can have a conductor structure and contact elements or contact surfaces connected to the contact or the back side contact of the radiation-emitting semiconductor chip and, if necessary, an insulating material or at least one insulating layer. Furthermore, the contact structure can include at least one redistribution layer.

[0028] For forming the contact structure, for example, a printed circuit board or a multilayer printed circuit board can be provided and connected to the contacts and the stabilization layer of the radiation-emitting semiconductor chip. Furthermore, the contact structure can be formed, for example, by alternately applying insulating materials and metallic materials together with corresponding structuring.

[0029] The formation of the stabilization layer is carried out as proposed above at least laterally and between the radiation-emitting semiconductor chips. In addition, the stabilization layer can be produced so that the stabilization layer is on the back side of the semiconductor chip. The formation of the stabilization layer can be performed by means of a molding process. It is also feasible to cast the material of the stabilization layer. If necessary, the excess material of the stabilization layer can be removed laterally. This can be done, for example, by grinding. In this way, the back side of the contact portion of the back side of the radiation-emitting semiconductor chip can be exposed. It is also feasible to form an opening in the stabilization layer that reaches the contact portion of the semiconductor chip. This can be used to subsequently form a contact structure connected to the contact portion of the semiconductor chip.

[0030] The radiation-emitting semiconductor chip of the emitter group can be a light-emitting diode or LED chip (light emitting diode). In another embodiment, the radiation-emitting semiconductor chip is a volume emitter. In such a volume-emitting semiconductor chip, radiation emission can be carried out via the front side and via the lateral side walls. The lateral side walls can extend between the front side and the opposite back side. In the design scheme, the semiconductor chip can be implemented in the form of a flip chip and has a radiation-transmissive chip substrate on the front side, a semiconductor layer sequence on the back side and arranged on the chip substrate and constituting the radiation generation, and a contact on the back side. The chip substrate, which can be a sapphire substrate, can form most of the lateral side walls and the front side.

[0031] Volume emitters can be relatively simple chip technology. Therefore, the use of volume emitters enables simple and cost-effective production of light-emitting devices. In addition, the light-emitting device can be manufactured in a targeted manner with a shape coordinated with the volume emitter in order to also efficiently utilize the light radiation emitted laterally via the lateral side walls of the volume-emitting semiconductor chip and to achieve efficient light-emitting operation of the light-emitting device. The following design solutions are conceivable.

[0032] In another embodiment, the stabilizing layer is a reflective layer. In this way, the stabilizing layer can be used for radiation reflection during operation of the light-emitting device. For this purpose, the stabilizing layer can be composed of a plastic material with reflective particles arranged or embedded therein. Regarding the radiation reflection by the stabilizing layer, the following can also be considered.

[0033] In another embodiment, a transparent layer adjacent to the radiation-emitting semiconductor chip is formed at least in the region of the lateral side walls of the radiation-emitting semiconductor chip, the transparent layer having a layer surface extending in a curved and / or inclined manner relative to the side walls of the radiation-emitting semiconductor chip in the region of the side walls. The stabilizing layer is formed adjacent to the transparent layer present in the region of the semiconductor chip. Here, due to the curved and / or inclined layer surface of the transparent layer, the stabilizing layer forms a reflector structure surrounding the radiation-emitting semiconductor chip. During operation of the light-emitting device manufactured in the described manner, the reflector structure formed by the stabilizing layer can cause radiation reflection and thus cause radiation deflection of the light radiation emitted via the lateral side walls of the radiation-emitting semiconductor chip toward the conversion element, so that the radiation portion is directed to the conversion section or conversion material of the conversion element. Associated with this is the efficient use of the light radiation emitted via the lateral side walls of the semiconductor chip and thus a high photon efficiency.

[0034] The transparent layer can be formed of a transparent plastic material or an adhesive material. It is feasible to form a separate transparent layer in the region of the radiation-emitting semiconductor chip, thereby forming a plurality of separate transparent layers as a whole. Depending on the design, a single connected transparent layer can also be formed.

[0035] In another embodiment, the emitter group is formed on the conversion element so that the radiation-emitting semiconductor chips are provided and then arranged on the conversion element. This can be done by means of adhesive bonding. In this embodiment of the method, there is the possibility of testing and / or pre-sorting the radiation-emitting semiconductor chips before they are arranged on the conversion element. As a result, the light-emitting device can be produced with high reliability according to certain regulations regarding the radiation emission and productivity losses can be avoided.

[0036] If a radiation-emitting semiconductor chip is provided and arranged on the conversion element, the arrangement of the semiconductor chip and the formation of the reflector structure can be carried out as follows.

[0037] According to another embodiment, the conversion element provided has a recess in the region of the conversion section on a side provided for the emitter group. The radiation-emitting semiconductor chip is arranged in the region of the recess of the conversion element using a transparent adhesive material. By means of the adhesive material or by means of the adhesive material for arranging the semiconductor chip on the conversion element and additionally applying the adhesive material in the region of the lateral sidewalls of the radiation-emitting semiconductor chip, a transparent layer adjacent to the radiation-emitting semiconductor chip in the region of the front side and the sidewalls is formed respectively. In the process, the recess of the conversion element is used as a stop edge for the adhesive material, so that the transparent layer formed by the adhesive material has a layer surface extending in a curved and / or inclined manner relative to the sidewalls of the radiation-emitting semiconductor chip in the region of the sidewalls. The stabilizing layer is adjacent to the transparent layer existing in the region of the semiconductor chip. Here, due to the curved and / or inclined layer surface of the transparent layer, the stabilizing layer forms a reflector structure surrounding the radiation-emitting semiconductor chip. As mentioned above, in the manner described, the light radiation emitted via the lateral sidewalls of the radiation-emitting semiconductor chip can be diverted toward the conversion element and efficiently utilized.

[0038] A design of a conversion element with a recess can be realized as described above by performing selective material removal in the region of a cavity of a carrier previously provided with a conversion material. Via the recess, the conversion material can be exposed on the side of the conversion element provided for the emitter group. In order to arrange a radiation-emitting semiconductor chip in the region of the recess of the conversion element, wherein the semiconductor chip can be partially accommodated in the recess, the adhesive material used can be applied to the conversion element or the conversion material present therein in the region of the recess, respectively, and then the semiconductor chip can be placed in the recess or in the region of the recess and placed on the adhesive material. The placement can be carried out in the following orientation of the semiconductor chip, in which the front side of the semiconductor chip or the radiation-transmissive chip substrate of the front side faces the conversion element. Here, the adhesive material can be squeezed out so that the lateral side walls of the semiconductor chip are wetted by the adhesive material. Alternatively, the adhesive material can be applied to the radiation-emitting semiconductor chip or its front side, and then the semiconductor chip can be placed in the recess of the conversion element or in the region of the recess. In this way, the squeezing out of the adhesive material and the wetting of the lateral side walls of the semiconductor chip by the adhesive material can also be caused. Depending on parameters such as the amount of adhesive material used, after placing the radiation-emitting semiconductor chip, an additional application of adhesive material can be carried out in the region of the side walls of the semiconductor chip in order to achieve sufficient wetting of the side walls by the adhesive material. In the process, the recess of the conversion element can be used as a wetting stop edge for the adhesive material for wetting the side walls of the semiconductor chip, so that the adhesive material does not extend laterally beyond the recess, but remains in the region of the recess and the semiconductor chip placed therein. Thus, in each of the radiation-emitting semiconductor chips, the adhesive material can form a transparent layer adjacent to the semiconductor chip in the region of the front side and the lateral side walls in a self-oriented manner, the transparent layer having a layer surface extending in a curved and / or inclined manner relative to the side walls in the region of the side walls. Thus, in the described manner, a plurality of separate transparent layers can be produced, i.e., a separate transparent layer is produced in each semiconductor chip. Thus, a stabilizing layer formed subsequently adjacent to the transparent layer present in the region of the semiconductor chip can form a reflector structure surrounding the radiation-emitting semiconductor chip.

[0039] The method can be carried out in such a way that a plurality of light-emitting devices are produced in a common manner. In this case, the structured converter element can be provided with lateral dimensions for a plurality of light-emitting devices and a plurality of converter sections or in the form of a converter element composite, and by forming the emitter groups and forming the stabilization layer and optionally carrying out further steps, such as forming contact structures connected to the contacts of the radiation-emitting semiconductor chip, a composite consisting of a plurality of connected light-emitting devices can be produced. By carrying out singulation, the composite can then be separated into a plurality of individual light-emitting devices. The singulation can be carried out mechanically, for example by sawing.

[0040] Instead of mounting individual radiation-emitting semiconductor chips on the conversion element, it is also possible to proceed as follows.

[0041] In another embodiment, the emitter group is formed on the conversion element so that a wafer of semiconductor chips emitting radiation is provided, which is arranged on the conversion element and is subsequently separated into semiconductor chips emitting radiation by dicing. In this way, it can be advantageous to produce a light-emitting device with a constant spacing between pixels, or it can be achieved that the variation of the spacing between pixels is relatively small or minimal. In a corresponding manner, a relatively small or minimal spacing between pixels can be achieved.

[0042] When the undivided wafer is arranged on the conversion element, the wafer can be connected to the conversion element via a connecting material or an adhesive material. Here, a wafer bonding method or bonding can be performed. The side of the conversion element on which the wafer is arranged can be flat. Cutting the wafer in order to form divided radiation-emitting semiconductor chips and thus form an emitter group on the conversion element can be performed mechanically, for example by sawing. Separation grooves can be formed by cutting, which are located between the radiation-emitting semiconductor chips. During cutting, at least the material of the wafer can be removed, and also the material of the conversion element or the carrier. In addition, the cutting can be performed in multiple stages, so that the separation grooves can have a stepped configuration.

[0043] The wafer used can have a radiation-transmissive substrate on the front side and individual semiconductor layer sequences arranged side by side on the radiation-transmissive substrate on the back side and forming the radiation-generating semiconductor layer sequences, as well as contacts on the back side. The radiation-transmissive substrate can consist of sapphire. When the wafer is cut, the radiation-transmissive substrate can be cut, whereby semiconductor chips with volume emission of the chip substrate resulting from the radiation-transmissive substrate can be formed.

[0044] The conversion element used in the above-described design can be provided as described above with dimensions and conversion sections for a plurality of light-emitting devices or in the form of a conversion element composite. A composite consisting of a plurality of connected light-emitting devices can be produced by arranging a wafer on the conversion element, slicing the wafer for providing the emitter groups, and forming a stabilization layer, and optionally further steps such as forming a contact structure. Subsequently, the composite can be divided into a plurality of light-emitting devices.

[0045] With regard to the above configuration, before forming the stabilization layer, a reflective coating can be formed on the radiation-emitting semiconductor chips and between the semiconductor chips on the conversion element. The reflective coating can be a metal coating. In order to avoid a short circuit that may occur due to the reflective coating, the insulating layer can be formed before forming the reflective coating.

[0046] Once the wafer has been arranged on the conversion element and the wafer has been singulated into radiation-emitting semiconductor chips, the formation of the reflector structure can be carried out as follows.

[0047] According to another embodiment, a transparent material is applied in the region of the lateral side walls of the radiation-emitting semiconductor chip in order to form a transparent layer adjacent to the radiation-emitting semiconductor chip, the transparent layer having a layer surface extending in a curved and / or inclined manner relative to the side walls of the radiation-emitting semiconductor chip in the region of the side walls. A stabilizing layer is formed adjacent to the transparent layer. Here, due to the curved and / or inclined layer surface of the transparent layer, the stabilizing layer forms a reflector structure surrounding the radiation-emitting semiconductor chip. In this design, as proposed above, the optical radiation emitted via the lateral side walls of the radiation-emitting semiconductor chip can be deflected toward the conversion element and thus efficiently utilized.

[0048] The transparent material used in the above-mentioned embodiment can be a transparent plastic material or an adhesive material. The transparent material can be introduced into the separation grooves formed by cutting the wafer between the semiconductor chips that emit radiation. Here, the lateral sidewalls of the semiconductor chip can be wetted with the transparent material so that the transparent material forms a transparent layer adjacent to the semiconductor chip that emits radiation in the region of the sidewall, and the transparent layer has a layer surface that extends curvedly and / or obliquely relative to the sidewall. The stabilizing layer formed subsequently can form a reflector structure that surrounds the semiconductor chip in the described manner. Here, the application or introduction of the transparent material can be carried out so that a single connected transparent layer is produced.

[0049] According to another aspect of the present invention, a light-emitting device is proposed. The light-emitting device has a structured conversion element, which has separate conversion sections arranged side by side for radiation conversion. The conversion element has a carrier with a recessed portion, and the recessed portion contains a conversion material. The recessed portion of the carrier exists in the form of a through-recessed portion. The conversion sections are respectively formed by the recessed portions of the carrier containing the conversion material. The light-emitting device also has an emitter group composed of radiation-emitting semiconductor chips arranged on the conversion element on one side of the conversion element. There are radiation-emitting semiconductor chips in the region of the conversion sections. Another component of the light-emitting device is a stabilization layer formed at least laterally and between the radiation-emitting semiconductor chips.

[0050] In a light-emitting device, a conversion section of a conversion element together with a corresponding radiation-emitting semiconductor chip present in the region of the conversion section forms a radiation-emitting pixel of the light-emitting device. In the light-emitting operation, the conversion section can transmit the primary light radiation generated by the semiconductor chip, and the conversion section can convert the primary light radiation at least partially into secondary light radiation. Thus, the corresponding light radiation can be emitted from the emission side or the front side of the light-emitting device. The emission side can be formed by the side of the conversion element opposite to the side where the emitter group is located. The light-emitting device can be characterized by a constant and small spacing between pixels. Due to the carrier that laterally surrounds each conversion section, optical crosstalk between pixels can be suppressed, and a high contrast between pixels can be achieved. The carrier can also achieve efficient heat dissipation. Thus, efficient light-emitting operation of the light-emitting device is feasible. The stabilizing layer can give the light-emitting device high mechanical stability. In addition, the stabilizing layer can contribute to the optical separation of pixels and can be used for radiation redirection according to the design scheme of the light-emitting device.

[0051] The light emitting device can be manufactured according to the above method or according to one or more of the above embodiments of the method. Therefore, the above features and details can be applied in a corresponding manner. For example, the following design scheme is feasible.

[0052] The conversion material can comprise phosphor particles or ceramic phosphor particles. Furthermore, the conversion material can comprise a binder, via which the phosphor particles can be fixed in the recesses of the carrier.

[0053] The light-emitting device can be implemented so that beam guidance or beam shaping can be caused by the cutouts of the carrier. For this purpose, the cutouts of the carrier can be partially filled with a conversion material. In this case, the cutouts may not have a conversion material in a sub-region on the emission side.

[0054] Additionally or alternatively, the converter material can be formed in the form of a deposit in the recess of the carrier. In this case, the converter material can have an increased density of luminescent material particles in the direction of the side of the converter element provided for the emitter group. In the emission-side subregion, the recess can have only or substantially only a binder for the converter material and no or substantially no luminescent material particles.

[0055] Additionally or alternatively, the cutout of the carrier has an at least partially widening cross-sectional shape in a direction away from the side of the converter element provided for the emitter array. As a result, the cutout can form a reflector structure.

[0056] In another embodiment, the carrier has a reflective coating at least in the region of the cutout. During operation of the light-emitting device, radiation reflection may occur at the reflective coating. The emission side of the light-emitting device may have no or substantially no reflective coating, thereby achieving a high contrast between the pixels of the light-emitting device.

[0057] The radiation-emitting semiconductor chips of the emitter group can be connected to the conversion element via a transparent connecting material or adhesive material.

[0058] In another embodiment, the radiation-emitting semiconductor chip has contacts on the rear side, and the front side of the semiconductor chip faces the conversion element. In this configuration, the contacts on the rear side of the semiconductor chip can be used as contacts of the luminous device in order to contact the luminous device and supply the luminous device with power.

[0059] In another embodiment, the light-emitting device has a contact structure connected to a contact of the radiation-emitting semiconductor chip or a contact on the back side in the region of the side of the radiation-emitting semiconductor chip facing away from the conversion element. The light-emitting device can be contacted and powered via the contact structure. The contact structure can have a conductor structure and a contact element connected to the contact of the semiconductor chip and, if necessary, an insulating material or at least one insulating layer.

[0060] In another embodiment, the radiation-emitting semiconductor chips of the emitter group are volume emitters. In this way, the light-emitting device can be produced cost-effectively. The light-emitting device can also be implemented so that the light radiation emitted via the lateral side walls of the volume-emitting semiconductor chip is efficiently utilized. This can be achieved as follows.

[0061] In another embodiment, the stabilizing layer is a reflective layer. Thus, the stabilizing layer is suitable for radiation reflection.

[0062] In another embodiment, a transparent layer adjacent to the radiation-emitting semiconductor chip is formed at least in the region of the lateral side walls of the radiation-emitting semiconductor chip, the transparent layer having a layer surface extending in a curved and / or inclined manner relative to the side walls of the radiation-emitting semiconductor chip in the region of the side walls. The stabilizing layer is adjacent to the transparent layer and forms a reflector structure surrounding the radiation-emitting semiconductor chip due to the curved and / or inclined layer surface of the transparent layer. In this way, radiation deflection or radiation reflection of the light radiation emitted via the lateral side walls of the radiation-emitting semiconductor chip toward the conversion element can be caused, which enables efficient utilization of the radiation component. The transparent layer can also be located in the region of the front side of the radiation-emitting semiconductor chip or between the front side of the radiation-emitting semiconductor chip and the conversion element.

[0063] The conversion element can have a recess in the region of the conversion section on the side provided for the emitter group. The radiation-emitting semiconductor chip can be arranged in the region of the recess of the conversion element. In this case, the semiconductor chip can be partially accommodated in the recess. The configuration can be used to enable the production of a transparent layer having a layer surface that runs in a curved and / or inclined manner relative to the side walls of the radiation-emitting semiconductor chip in a self-aligning manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] The characteristics, features and advantages of the present invention described above and the ways and methods of achieving these characteristics, features and advantages become clearer and easier to understand in conjunction with the following description of the embodiments, which are explained in detail in conjunction with the schematic diagrams. The accompanying drawings show:

[0065] Figure 1 and Figure 2 A plan view and a side view of a luminous device are shown, which has a conversion element with a plurality of conversion segments, an emitter group composed of radiation-emitting semiconductor chips arranged on one side on the conversion element, stabilization layers formed laterally and between the semiconductor chips, and a rear-side contact structure;

[0066] Figure 3 A configuration of a conversion material having a binder material and phosphor particles is shown;

[0067] Figure 4 A configuration of a stabilization layer having plastic material and reflective particles is shown;

[0068] Figure 5 shows a side view of a radiation-emitting semiconductor chip, wherein the radiation emission from the front side and the lateral side walls is indicated;

[0069] Figure 6 showing another side view of the light emitting device, wherein the radiation emission is indicated;

[0070] Figures 7 to 13 The production of a converter element is shown according to a side view, wherein a converter element is produced which comprises a carrier having a shape surrounding a converter material on the rear side;

[0071] Figures 14 to 19 The production of a luminous device is shown according to a side view, wherein the emitter groups are formed by arranging individual radiation-emitting semiconductor chips on the conversion element;

[0072] Figure 20 to Figure 22 The production of a luminous device according to a further configuration is shown according to a side view, in which a carrier of the converter element is produced in a shape which does not surround the converter material on the rear side;

[0073] Figure 23 to Figure 26 The production of a luminous device according to a further configuration is shown according to a side view, wherein the converter element is produced in such a way that the recess of the carrier is partially filled with a converter material;

[0074] Figure 27 to Figure 29 The production of a luminous device according to a further configuration is shown according to a side view, wherein the converter element is produced in such a way that the converter material is present in deposited form in the recess of the carrier;

[0075] Figure 30 to Figure 33 The production of a luminous device according to a further configuration is shown according to a side view, wherein the converter element is produced in such a way that the carrier has a recess which widens in a direction away from the emitter group;

[0076] Figure 34 to Figure 35 The production of a light-emitting device according to another configuration is shown according to a side view, wherein the contact structure is produced with an opening in the stabilization layer;

[0077] Figures 36 to 42 shows, according to a side view, the production of a luminous device according to a further configuration, in which the emitter groups are formed by arranging a wafer on a conversion element and subsequently dicing the wafer into radiation-emitting semiconductor chips; and

[0078] Fig.43 and Fig.44 The production of a luminous device according to a further configuration is shown according to a side view, in which, after dicing the wafer, a transparent material is introduced into the separating trenches between the radiation-emitting semiconductor chips. DETAILED DESCRIPTION

[0079] A possible embodiment of a luminous device 100 implemented as a pixelated light source and an associated method for its production is described with the following schematic diagram. A luminous device 100 having a plurality of radiation-emitting pixels 105 arranged next to one another can be used in a headlight of an adaptive lighting system of a vehicle. The luminous device 100 is characterized by an efficient operating mode.

[0080] It should be noted that the schematic diagrams may not be true to scale. Therefore, for a better understanding, the components and structures shown in the drawings may be exaggerated or exaggerated. In addition, it should be noted that the features and details mentioned with respect to one design solution may also be applied with respect to other designs, and that a plurality of designs and their features may be combined with one another. Identical features may be described in detail here with respect to only one design solution.

[0081] Figure 1 and Figure 2 FIG. 1 shows a top view and a side cross-sectional view of a pixelated light emitting device 100 according to a possible design solution. Figure 1 The top view shows that Figure 2 The section line of the section plane. Figure 2 A detail of a light-emitting device 100 is shown. The light-emitting device 100 has a structured conversion element 110 with separate conversion sections 113 arranged side by side for radiation conversion and an emitter group 240 composed of radiation-emitting semiconductor chips 140 arranged on the conversion element 110. The conversion sections 113 of the multi-pixel conversion element 110 are arranged side by side in the main extension plane of the conversion element 110. The radiation-emitting semiconductor chips 140 are arranged side by side in a corresponding manner in a common plane. The semiconductor chip 140 can be an LED chip (light-emitting diode), which is implemented in the form of a volume emitter as described further below. Therefore, the emitter group 240 can also be referred to as an LED device. The conversion element 110 has two opposite main sides 111, 112, which are also referred to as the front side 111 and the back side 112 below. The emitter group 240 is at the back side 112 of the conversion element 110. There is a semiconductor chip 140 in the region of each conversion section 113 of the conversion element 110. Here, the conversion section 113 and the associated semiconductor chip 140 each form a light pixel 105 of the light-emitting device 100. The light-emitting device 100 is designed so that the semiconductor chip 140 can be individually electrically controlled to emit radiation. In this regard, the light-emitting device 100 has individually controllable pixels 105. This allows individualized dynamic lighting scenes to be realized.

[0082] The front side 111 of the pixelated conversion element 110 simultaneously forms the front side 101 of the light-emitting device 100, via which light radiation 202 can be emitted during operation (see Figure 6 ). The front side 101 of the light emitting device 100 may therefore also be referred to as the emission side. Figure 1 A plan view of the front side 101 of the luminous device 100 and thus of the front side 111 of the conversion element 110 is shown.

[0083] The converter element 110 has a carrier 120 with cutouts 124 which penetrate the carrier 120 completely between the main sides 111, 112. A converter material 130 is located in each cutout 124, by which radiation conversion can be effected. The converter sections 113 of the converter element 110 are each formed by a cutout 124 of the carrier 120 which contains the converter material 130. Figure 1 It is clear that the cutouts 124 of the carrier 120 and thus the conversion sections 113 of the conversion elements 110 are arranged side by side in a matrix-like manner in the form of rows and columns. This applies in the same way to the radiation-emitting semiconductor chips 140 that are each arranged centrally in the region of the conversion sections 113. The cutouts 124 of the carrier 120 and the conversion sections 113 of the conversion elements 110 also have a rectangular or square top view shape corresponding to the semiconductor chips 140. Figure 1 and Figure 2 In the embodiment shown in , the semiconductor chip 140 also has smaller lateral dimensions than the recess 124 and the transition section 113. The recess 124 and the transition section 113 can have lateral dimensions in the micrometer to millimeter range. The same applies to the semiconductor chip 140. The transition section 113 can have lateral dimensions in the range of 2 mm×2 mm to 25 μm×25 μm, for example.

[0084] According to Figure 1 In the exemplary embodiment depicted in FIG, the light-emitting device 100 includes twenty-four conversion segments 113 and thus pixels 105, which are arranged in the form of two rows and twelve columns. Deviating from this, the light-emitting device 100 can be realized with another number and arrangement of conversion segments 113 and pixels 105.

[0085] The carrier 120 of the conversion element 110 may consist of silicon. Furthermore, the carrier 120 may be provided with a reflective coating 128 (see Figure 6 ), as explained further below.

[0086] As in Figure 2 As shown in FIG. 1 , the converter element 110 has a recess 115 on the rear side and thus has a structured rear side 112. The light-emitting semiconductor chip 140 is arranged in the region of the recess 115 of the converter element 110 and is partially or partially accommodated in the recess 115 (see also FIG. 1 ). Figure 6 ). The recesses 115 of the converter element 110 are realized in that the carrier 120 protrudes above the converter material 130 at the rear side 112 . The recesses 115 form part of the cutouts 124 of the carrier 120 . Figure 2In the embodiment shown in , the carrier 120 in the region of the recess 115 also has a shape surrounding the converter material 130 , so that the recess 124 has a stepped configuration and a stepped inner side in cross section.

[0087] The radiation-emitting semiconductor chip 140 of the emitter group 240 has a front side 141, a back side 142 opposite the front side 141, and lateral side walls 143 extending between the front side and the back side 141, 142. Figure 2 As shown in FIG. 1 , the semiconductor chip 140 is positioned such that a front side 141 of the semiconductor chip 140 faces the conversion element 110 and a back side 142 of the semiconductor chip 140 faces away from the conversion element 110. Furthermore, the radiation-emitting semiconductor chip 140 has two contacts 148 at the back side 142, via which the semiconductor chip 140 can be contacted and supplied with power (see also FIG. 1 ). Figure 5 ).

[0088] As in Figure 2 As further shown in FIG. 1 , the radiation-emitting semiconductor chips 140 are connected to the conversion element 110 via a transparent layer 150. The transparent layer 150 is present in the region of each semiconductor chip 140. The transparent layer 150 adjoins not only the front side 141 of the respective semiconductor chip 140 but also the lateral side walls 143 of the respective semiconductor chip 140, so that the semiconductor chip 140 is surrounded by the transparent layer 150 on the front side and on the circumferential side. In the region of the lateral side walls 143, the transparent layer 150 has a layer surface 155 which runs in a curved and / or inclined manner relative to the side walls 143. Furthermore, the transparent layer 150 adjoins the conversion element 110 on the back side in the region of the respective recess 115. As described further below, in each of the semiconductor chips 140, the transparent layer 151 serves as a light transmission element for efficiently utilizing the light radiation 201 generated by the semiconductor chip 140.

[0089] Another component of the light-emitting device 100 is a reflective stabilization layer 160, which is formed on the back side of the conversion element 110 and is located laterally and between the radiation-emitting semiconductor chips 140 of the emitter group 240. The stabilization layer 160 is also located at the back side 142 of the semiconductor chip 140. In this case, the back side surface of the contact 148 of the semiconductor chip 140 does not have the stabilization layer 160 or the stabilization layer 160 is flush with the back side surface of the contact 148. The stabilization layer 160 adjoins the carrier 120 of the conversion element 110 and the transparent layer 150 surrounding the semiconductor chip 140 and in the region of the semiconductor chip 140, corresponding to the layer surface 155 of the transparent layer 150, also has a layer surface that runs in a curved and / or inclined manner relative to the lateral side walls 143 of the semiconductor chip 140. As a result, the stabilization layer 160 can form a reflector structure surrounding the semiconductor chip 140 for radiation deflection.

[0090] The light-emitting device 100 further comprises a back-side contact structure 170, which is formed on the stabilization layer 160 and on the radiation-emitting semiconductor chip 140 or its contact 148. The light-emitting device 100 can be contacted via the contact structure 170 and the light-emitting device 100 and its semiconductor chip 140 can be supplied with power. The contact structure 170 comprises a metallic conductor structure 171 electrically connected to the contact 148 of the semiconductor chip 140 and an insulating material 175 surrounding the conductor structure 171. The conductor structure 171 forms a contact surface 172 on the back side of the light-emitting device 100. As in Figure 2 As indicated in , the conductor structure 171 can be realized in the form of a plurality of redistribution wiring planes or redistribution wiring layers. In a corresponding manner, the insulating material 175 can be formed in the form of a plurality of insulating layers. The contact structure 170 forms the back side 102 of the light emitting device 100 opposite the front side 101 .

[0091] As in Figure 3 As shown in the partial drawing in FIG. 1 , the conversion material 130 contained in the cutout 124 of the carrier 120 has a binder 131 and luminescent material particles 132. With the aid of the luminescent material particles 132, radiation conversion can be achieved, and the luminescent material particles can be ceramic luminescent material particles. The luminescent material particles 132 can be arranged or embedded in the binder 131. The binder 131, which can serve as a matrix material, can be a plastic material or a polymer material.

[0092] Regarding the reflective stabilization layer 160, consider Figure 41. Here, the stabilization layer 160 comprises a plastic material or polymer material 161 and reflective particles 162. For example, the plastic material 161 is a silicone material. The reflective particles 162 can be arranged or embedded in the plastic material 161. With the help of the reflective particles 162, radiation reflection can be caused, and the reflective particles can be TiO2 particles.

[0093] For the radiation-emitting semiconductor chip 140 of the light-emitting device 100, a design in the form of a cost-effective volume emitter is proposed. In this design, radiation emission can take place via the front side 141 and via the lateral side walls 143 during operation of the semiconductor chip 140. For illustration purposes, Figure 5 A lateral sectional view of a single radiation-emitting semiconductor chip 140 is shown, wherein the emission of light radiation 201 from the front side 141 and the side walls 143 of the semiconductor chip 140 during operation of the semiconductor chip 140 is indicated. The light radiation 201 is also referred to below as primary light radiation 201 .

[0094] The volume-emitting semiconductor chip 140 implemented in the form of a flip chip has, in addition to the back-side contacts 148 already described, a radiation-transmissive chip substrate 145 on the front side and a semiconductor layer sequence 146 on the back side arranged on the chip substrate 145 and forming the radiation generation. The chip substrate 145 can be a sapphire substrate. The chip substrate 145 forms a large part of the front side 141 and the lateral side walls 143 of the respective semiconductor chip 140. Via the back-side contacts 148 connected to the semiconductor layer sequence 146, the semiconductor layer sequence 146 can be electrically controlled to cause the radiation generation.

[0095] In the luminous operation of the luminous device 100, individual, multiple or all radiation-emitting semiconductor chips 140 of the emitter group 240 can be electrically actuated by means of the contact structure 170 of the luminous device 100. In this way, primary light radiation 201 can be emitted by the actuated semiconductor chips 140, by means of which the associated conversion section 113 of the conversion element 110 can be transmitted. Figure 6 , the operating mode is illustrated with respect to the semiconductor chip 140 of the luminous device 100 and thus the radiation-emitting pixel 105. The primary light radiation 201 can be partially converted into secondary light radiation by the conversion section 113. In this case, the primary light radiation and the secondary light radiation can be emitted jointly by the conversion section 113 in the form of superimposed mixed radiation 202. The primary light radiation and the secondary light radiation can be blue light radiation and yellow light radiation, so that the pixel 105 of the lighting device 100 can generate white light radiation 202 as a whole. The light radiation 202 can be emitted via the front sides 101, 111 of the conversion element 110 and the luminous device 100.

[0096] The use of a conversion element 110 with a conversion section 113 provides the possibility of precisely determining the orientation and spacing of the radiation-emitting pixels 105 of the light-emitting device 100. The carrier 120 of the conversion element 110, which laterally surrounds the conversion section 113 in the form of a frame, can cause an optical separation between the conversion section 113 and thus the pixels 105, so that optical crosstalk between the pixels 105 can be suppressed and a high contrast between the pixels 105 can be achieved. In addition, the heat energy generated during radiation conversion can be laterally conducted away from the conversion section 113 and distributed over the conversion element 110 by the carrier 120, which can achieve efficient heat dissipation. Therefore, the pixelated light-emitting device 100 can be characterized by an efficient operating mode. The reflective stabilization layer 160 also contributes to the optical separation of the pixels 105 and furthermore gives the light-emitting device 100 a high mechanical stability. In addition, the stabilization layer 160 can achieve radiation deflection during the operation of the light-emitting device 100. Here, the coupling-out mechanism described below plays a role.

[0097] As per Figure 5 As explained, the radiation-emitting semiconductor chip 140 can emit primary light radiation 201 via its front side 141 and lateral side walls 143. The luminous device 100 is designed such that the conversion section 113 of the conversion element 110 can transmit not only the light radiation 201 emitted via the front side 141 of the semiconductor chip 140, but also the portion of the light radiation 201 emitted via the lateral side walls 143 (see Figure 5 ) can be utilized in an efficient manner. For the purpose of efficient light outcoupling, the transparent layer 150 formed in each of the semiconductor chips 140 is used as described above and also in Figure 6 , the transparent layer has a layer surface 155 extending obliquely and / or curved relative to the side wall 143 in the region of the lateral side wall 143. As a result, the reflective stabilization layer 160 can also have a layer surface extending obliquely and / or curved relative to the lateral side wall 143 of the semiconductor chip 140 in the region of the semiconductor chip 140 and form a reflector structure surrounding the semiconductor chip 140. In this way, the stabilization layer 160 can be used to cause the radiation 201 emitted via the side wall 143 of the semiconductor chip 140 and coupled into the respectively associated transparent layer 150 to be reflected toward the conversion element 110 and thus deflected. As a result, the radiation component can be partially guided to the conversion section 113 (not shown) while being coupled back into or re-transmitting the semiconductor chip 140 or its chip substrate 145. Therefore, the reflective stabilization layer 160 can also contribute to an efficient operation mode of the light emitting device 100.

[0098] Figure 6A possible design is shown, in which the conversion element 110 or its carrier 120 is additionally formed with a reflective coating 128. The reflective coating 128 can be a metal coating. The coating 128 is present in the region of the cutouts 124 and the recesses 115 of the carrier 120 and the conversion element 110 and also on the back side of the carrier 120. With the help of the reflective coating 128, radiation reflection can be caused in the region of the cutouts 124 and the recesses 115, which can achieve an increased light yield and thus facilitate efficient luminous operation. The front sides 101, 111 of the conversion element 110 and the light-emitting device 100 are essentially free of the reflective coating 128. As a result, a high contrast can also be ensured between the pixels 105 of the light-emitting device 100.

[0099] To manufacture the aforementioned light emitting device 100, the following may be applied according to Figures 7 to 19 Here, the production process shown in the drawing is illustrated with the aid of a lateral sectional view, wherein the corresponding conditions are each illustrated in a partial view.

[0100] Figures 7 to 13 The production of a structured conversion element 110 in one possible embodiment is shown. Figure 7 As shown, a plate-shaped carrier 120 is provided, which has two opposite main sides, which are again referred to as the front side 111 and the back side 112 below. The carrier 120 can be a silicon substrate or a silicon wafer. Figure 8 As shown in FIG, a cavity 123 is formed in the region of the front side 111 of the carrier 120. For this purpose, an etching process (not shown) can be performed using an etching mask, for example a photoresist mask, formed on the carrier 120. The formation of the cavity 123 can be performed by reactive ion etching (DRIE, deep reactive ion etching).

[0101] Then, as in Fig. 9 As shown in , the carrier 120 and its cavity 123 are provided with a reflective coating 128 on the front side. The coating 128 can be a metal coating and can be produced by a corresponding coating method. It is possible, for example, to apply a metal material such as aluminum, silver or gold by sputtering or evaporation. In addition, it is also possible to perform a sequential application of different metal materials in order to achieve a reflective coating 128 in the form of a metal layer stack, for example NiAg or NiPdAu.

[0102] Then, as in Fig.10 As shown in FIG. 1 , the cavity 123 of the carrier 120 is completely filled with the conversion material 130. The conversion material 130 used can be a binder material or matrix material 131 with phosphor particles 132 embedded therein (see FIG. 1 ). Figure 3) and introduced into the cavity 123 of the carrier 120 (not shown), for example, by spraying, metering or dispensing or by means of a doctor blade. Alternatively, it is possible to first fill the cavity 123 of the carrier 120 with pure phosphor particles 132 and then fix and mechanically stabilize them by depositing the adhesive material 131 into the cavity 123. In this case, for example, aluminum oxide can be deposited by means of atomic layer deposition (ALD, atomic layer deposition).

[0103] Subsequently or after the conversion material 130 has hardened, a large-area material removal is performed in the region of the front side 111 of the carrier 120 in order to achieve, for example, Fig.11 , the front side 111 is substantially free of a reflective coating 128. This can be performed by grinding using a grinding tool. In the process, at least the material of the reflective coating 128 and a portion of the conversion material 130 and, if necessary, the original carrier material (silicon) of the carrier 120 are removed. Material removal can also be used to achieve the purpose of planarizing the conversion material 130 and the front side 111.

[0104] After this, material is removed on the back side in the region of the cavity 123 or the carrier 120 is opened on the back side, so that the converter material 130 is exposed at the back side 112 and, as in Fig.12 As shown in FIG. 1 , the cutout 124 containing the converter material 130 protrudes from the cavity 123 of the carrier 120 and in this respect forms the converter section 113. In this way, a recess 115 is also present at the back side 112. The opening on the back side can be performed by etching, for example reactive ion etching, using an etching mask or photoresist mask formed on the carrier 120 (not shown). In the process, at least the original carrier material of the carrier 120 and the material of the reflective coating 128 are removed, and if necessary, also a part of the converter material 130 is removed.

[0105] Subsequently, further processes are performed so that the cutout 124 of the carrier 120 is Fig.13 As shown in FIG, the reflective coating 128 is provided completely on the inside, and the recess 115 forms part of the recess. Fig. 9 In the manner described, a further coating or metal coating of the carrier 120 is carried out, here on the back side 112 of the carrier 120. Since the converter material 130 or the converter section 113 is also coated on the back side in the process, so that the recess 124 is closed on the back side with a reflective coating 128 (not shown), after the coating method, an opening on the back side or removal of the coating 128 is also carried out in the region of the converter material 130 in order to achieve a reflective coating on the back side. Fig.13The state illustrated in the figure thus realizes the production of the conversion element 110. For this purpose, the etching of the coating 128 can be carried out using an etching mask or a photoresist mask (not shown). In the conversion element 110 produced in this way, the reflective coating 128 is also present on the back side of the carrier 120 between the cutouts 124 or the recesses 115. In this case, the coated carrier 120 protrudes on the back side between the recesses 115 beyond the conversion material 130. In addition, the coated carrier 120 has a shape that surrounds the conversion material 130 at the back side 112 in the region of the recesses 115.

[0106] The conversion element 110 is designed with a reflective coating 128, so that there is a Fig.13 (and also Figure 6 ) is an optional design. In contrast, it is possible to Fig.12 The method state shown in FIG. 1 does not involve any further coating of the carrier 120 and in this respect will be Fig.12 The structure shown in FIG. 1 is used as conversion element 110 , or the formation of reflective coating 128 can be completely omitted.

[0107] With regard to the last-mentioned variant, the cancellation of Fig. 9 and Fig.13 The coating process described and Fig.10 The converter material 130 is introduced into the cavity 123 of the uncoated carrier 120 in different ways. Fig.11 The material removal on the front side described can be omitted or carried out in order to planarize the front side 111 of the converter material 130 and the carrier 120. As a result, the converter element 110 produced in the described manner can have a Figure 2 For reasons of clarity, the further manufacturing of the light emitting device 100 is described in detail below. Figures 14 to 19 A simplified embodiment of the conversion element 110 without a reflective coating 128 is selected and combined with the attached Figure 2 Corresponding figures. The conversion element 110 can have a configuration without a coating 128 or with a coating 128 .

[0108] Figures 14 to 19 A further method sequence for producing a light emitting device 100 is shown in one possible embodiment. After providing the conversion element 110, as in Fig.14 and Fig.15, an emitter group 240 consisting of radiation-emitting semiconductor chips 140 is formed on the back side 112 of the conversion element 110, wherein the semiconductor chips 140 are respectively arranged in the region of the conversion section 113 and the recess 115 of the conversion element 110. In the method sequence described here, the radiation-emitting semiconductor chips 140 are provided and subsequently mounted on the conversion element 110 by means of adhesive bonding. In this way, there is the possibility of testing and / or pre-sorting the semiconductor chips 140 before their mounting, whereby productivity losses can be avoided and the light-emitting device 100 can be produced in accordance with certain regulations regarding the radiation emission.

[0109] The radiation-emitting semiconductor chip 140 having smaller lateral dimensions than the recess 115 of the converter element 110 is arranged centrally in the region of the recess 115 of the converter element 110 using a transparent adhesive material 151 and is partially or partially accommodated in the recess 115. The adhesive material 151 can be a transparent sapphire or silicone adhesive. Fig.14 and Fig.15 As shown in , the adhesive material 151 can first be applied to the converter element 110 or the converter material 130 present therein in each case in the recess 115, and subsequently the radiation-emitting semiconductor chip can be placed in the recess 115 or in the region of the recess 115 and placed on the adhesive material 151. This is done in an orientation of the semiconductor chip 140 in which the front side 141 of the semiconductor chip 140 or the chip substrate 145 of the front side faces the back side 112 of the converter element 110. The placement of the semiconductor chip 140 can be carried out by means of a placement tool, wherein in Fig.14 and Fig.15 , a corresponding suction nozzle 211 is depicted in FIG. 1 . In this case, the semiconductor chip 140 can be held at its back side 142 by means of the suction nozzle 211 while applying negative pressure. It is possible to arrange a plurality or all semiconductor chips 140 together on the converter element 110 by means of a placement tool.

[0110] The placement and positioning of the light-emitting semiconductor chip 140 on the adhesive material 151 is carried out by means of a corresponding contact pressure, thereby squeezing out and laterally pressing out the adhesive material 151, so that the lateral side walls 143 of the semiconductor chip 140 can be wetted with the adhesive material 151, as in Fig.15. In the process, the recess 115 of the converter element 110 or its surrounding edge serves as a stop edge 116 for the adhesive material 151 for wetting the side walls 143 of the semiconductor chip 140, so that the adhesive material 151 does not protrude laterally beyond the recess 115, but remains positioned in the region of the recess 115 and the semiconductor chip 140 arranged therein. As a result, the adhesive material 151 can form in a self-aligned manner in each of the semiconductor chips 140 a transparent layer 150 adjoining the semiconductor chip 140 in the region of the front side 141 and the side walls 143, which transparent layer has a layer surface 155 extending in a curved and / or inclined manner relative to the side walls 143. Furthermore, the transparent layer 150 adjoins the converter element 110 on the back side in the region of the corresponding recess 115. The layer 150 covering the side walls 143 of the semiconductor chip 140 can also be referred to as a chip ridge, a side ridge, an adhesive ridge or a coupling-out ridge. In a coated embodiment of the carrier 120 of the converter element 110, the wetting stop edge 116 can be formed by the reflective coating 128, and in an uncoated embodiment of the carrier 120, the stop edge 116 can be formed by the original carrier material (silicon) of the carrier 120 (see Figure 6 , Fig.13 and Fig.15 ).

[0111] Depending on parameters such as the amount of adhesive material 151 used, it is also conceivable that, after placing the radiation-emitting semiconductor chip 140, adhesive material 151 may be additionally applied in the region of the lateral side walls 143 of the semiconductor chip 140, in order to wet the side walls 143 in a sufficient amount with adhesive material 151. This can be done with the aid of a metering device or dispenser, wherein the adhesive material 151 is applied to the semiconductor chip 140 in a sufficient amount. Fig.15 1 shows a corresponding metering nozzle 212. In this case, the metering of the additional adhesive material 151 takes place in the vicinity of the side walls 143 of the semiconductor chip 140. In the process, the recess 115 of the converter element 110 can also form a stop edge 116 for the adhesive material 151, so that the adhesive material 151 does not protrude laterally from the recess 115, and in this respect a self-oriented production of the transparent layer 150 with a layer surface 155 extending in a curved and / or inclined manner relative to the side walls 143 can be achieved.

[0112] and Fig.14 and Fig.15Alternatively, it is possible that the radiation-emitting semiconductor chip 140 can be provided with an adhesive material 151 on its front side 141 and that the semiconductor chip 140 pretreated in this way can be placed in the recess 115 or in the region of the recess 115 of the converter element 110 by means of a placement tool (not shown). In this way, it is also possible to cause the adhesive material 151 to be squeezed out and the lateral side walls 143 of the semiconductor chip 140 to be wetted with the adhesive material 151, so that the adhesive material 151 can form, as described above, in a self-oriented manner in each of the semiconductor chips 140, a transparent layer 150 adjoining the semiconductor chip 140 in the region of the front side 141 and the side walls 143, which transparent layer has a layer surface 155 that runs in a curved and / or inclined manner relative to the side walls 143. In this way, it is also possible to apply the adhesive material 151 in addition in the region of the side walls 153 of the semiconductor chip 140 after the semiconductor chip 140 has been placed.

[0113] After the emitter array 240 consisting of radiation-emitting semiconductor chips 140 has been formed on the conversion element 110 and the transparent layer 150 has been formed or after the transparent layer has been cured, as in Fig.16 As shown in FIG. 1 , a reflective stabilization layer 160 is formed in the region of the back side 112 of the conversion element 110 while enclosing the semiconductor chip 140. The stabilization layer 160 is located laterally and between the semiconductor chip 140 and is also present on the back side of the semiconductor chip 140. The stabilization layer 160 is adjacent to the transparent layer 150 present in the region of the semiconductor chip 140 and, as described above, forms a reflector structure surrounding the semiconductor chip 140 due to the layer surface 155 of the transparent layer 150 extending in a curved and / or inclined manner relative to the side walls 143 of the semiconductor chip 140. The stabilization layer 160 is also adjacent to the conversion element 110 or its carrier 120 on the back side. According to Fig.16 The stabilization layer 160 is produced in such a way that the rear side surface of the contact 148 of the semiconductor chip 140 does not have the stabilization layer 160 and the stabilization layer 160 is flush with the rear side surface of the contact 148 .

[0114] To form the stabilization layer 160, a plastic material 161 having reflective particles 162 embedded therein (see Figure 4 ) is applied to a conversion element 110 carrying an emitter group 240 consisting of radiation-emitting semiconductor chips 140. For this purpose, a forming process, also referred to as a molding process, can be performed using a forming tool. It is also possible to cast a plastic material 161 containing reflective particles 162, which can be performed using a limiting structure called a dam. This process is also called a dam-and-fill-method (not shown in each case). Subsequently, the stabilization layer 160 can be hardened or hardened.

[0115] As in Fig.17 As depicted in FIG. 1 , there is the possibility of producing the stabilization layer 160 in such a way that the stabilization layer 160 projects beyond the contacts 148 of the radiation-emitting semiconductor chip 140 on the rear side and the contacts 148 are covered by the stabilization layer 160. In this case, a portion of the stabilization layer 160 can be removed in order to provide a corresponding Fig.16 This can be performed by grinding or flattening using a grinding tool 214, such as in Fig.17 As indicated in .

[0116] After this, as in Fig.18 As shown in , the contact structure 170 is formed in the region of the back side 142 of the radiation-emitting semiconductor chip 140 facing away from the conversion element 110. The back-side contact structure 170 adjoins the stabilization layer 160 and the contact 148 of the radiation-emitting semiconductor chip 140. The contact structure 170 has a metallic conductor structure 171 electrically connected to the contact 148 of the semiconductor chip 140 and an electrically insulating material 175 surrounding the conductor structure 171. The conductor structure 171 forms a back-side contact surface 172, via which the light-emitting device 100 can be contacted and the light-emitting device can be supplied with power for driving the semiconductor chip 140.

[0117] As in Fig.18 As indicated in , the contact structure 170 can be implemented in the form of a fan-out multistack, so that the conductor structure 171 forms a plurality of interconnection or rewiring planes. In the design scheme, the contact structure 170 can be implemented, for example, in the form of a multilayer circuit board (PCB, printed circuit board), which can be mounted on the stabilizing layer 160 and the contact portion 148 of the semiconductor chip 140 by means of bonding and / or welding. Alternatively, the contact structure 170 can be manufactured on the stabilizing layer 160 and the contact portion 148 of the semiconductor chip 140 by successively applying an insulating material or a dielectric material and a metal material, together with corresponding patterning and opening steps. With regard to the metal material, the application can be electroplating.

[0118] By forming the contact structure 170, the light emitting device 100 can be manufactured. Fig.18The produced light-emitting device 100 can be drawn in the figure. However, the method can also be carried out in such a way that a plurality of light-emitting devices 100 are produced in a common manner. For this purpose, the conversion element 110 can be provided with lateral dimensions for a plurality of light-emitting devices 100 and a plurality of conversion segments 113, i.e. in the form of a conversion element composite or a conversion element wafer, and a composite consisting of a plurality of connected light-emitting devices 100 can be produced by the above-mentioned steps, such as forming an emitter group 240 with a radiation-emitting semiconductor chip 140 on the conversion element 110, forming a stabilization layer 160 and producing a contact structure 170. In the variant described, then as in Fig.19 As shown in , the composite is divided into a plurality of light-emitting devices 100 in order to provide the light-emitting devices in individual form. Here, the composite is cut between the conversion section 113 and the semiconductor chip 140, as shown in Fig.19 As indicated by the separation lines 221 in FIG. 1 , in the process, the conversion element 110 or its carrier 120 , the stabilization layer 160 and the contact structure 170 are cut apart so as to be distributed over a plurality of light-emitting devices 100 . For singulation, a sawing process can be performed.

[0119] The provision of the conversion element 110 with the conversion section 113 and the formation of the emitter group 240 composed of the radiation-emitting semiconductor chip 140 on the conversion element 110 carried out in the method make it possible to determine the respective positions of the pixels 105 of the luminous device and the distances between the pixels 105 with high precision. The luminous device 100 can thus be manufactured in such a way that a constant and also relatively small distance exists between the pixels 105, so that a seamless illumination can be achieved during the operation of the luminous device 100.

[0120] The formation of a back-side contact structure 170 is an optional design. In contrast, it is possible not to form such a contact structure 170 and, as an alternative, to use the contact 148 of the radiation-emitting semiconductor chip 140 itself as a contact or contact surface for contacting the light-emitting device 100 and supplying the light-emitting device 100 with power. Fig.16 A design of the light emitting device 100 realized in the sense described can be shown. In the variant described, it is also conceivable to jointly produce a plurality of light emitting devices 100 and in this respect to form the stabilization layer 160 and to form the corresponding Fig.16 The produced composite is separated into individual light-emitting devices 100 .

[0121] Other possible variants and designs are described below, which can be considered with respect to the luminous device 100 and the associated manufacturing method. The consistent features and details and the same and identically functioning components are not described in detail below. For details on this, reference is made to the above description instead.

[0122] Figure 20 to Figure 22 The production of a luminous device 100 according to another configuration is shown in detail according to a lateral sectional view. In this case, the production of the conversion element 110 first corresponds to Figures 7 to 11 As in Fig. 20 and Fig.21 As shown in FIG. 1 , the carrier 120 is opened on the back side in the region of the cavity 123 and then the carrier 120 is further coated on the back side in the region of the converter material 130 and the emitting coating 128 is opened on the back side. Fig.12 and Fig.13 In contrast, the coated carrier 120 does not have a shape surrounding the converter material 130 on the rear side 112 in the region of the recess 115. Fig.13 Compared to the design scheme shown in FIG. Fig.21 The cutout 124 with a straight, rather than stepped, inner side in cross section and a laterally recessed stop edge 116 in the region of the recess 115 are shown. Fig. 22 A further method sequence for the luminous device 100 shown in FIG. 1 is carried out in the manner described above by forming an emitter group 240 consisting of radiation-emitting semiconductor chips 140 on the conversion element 110 , forming a stabilization layer 160 , forming a contact structure 170 and, if appropriate, carrying out singulation.

[0123] Figure 23 to Figure 26 The production of a luminous device 100 according to another configuration is shown in detail according to a lateral sectional view. The production of the conversion element 110 first corresponds to Figures 7 to 9 However, the introduction of the conversion material 130 into the cavity 123 of the carrier 120 is performed so that Fig.23 , the cavity 123 is only partially filled with a conversion material 130. In this case, the conversion material 130 is located in a lower or bottom-side subregion of the cavity 123, and the remaining or front-side subregion of the cavity 123 does not have a conversion material 130. With regard to this variant, it is conceivable to provide a carrier 120 with a greater thickness and to realize a cavity 123 with a greater depth extension of the carrier 120 compared to the above-described configuration. Material removal or grinding for removing the reflective coating 128 in the region of the front side 111 of the carrier 120 can be performed after or also before the introduction of the conversion material 130 into the cavity 123.

[0124] As in Fig.24 and Fig.25 As shown in FIG. 1 , the carrier 120 is then opened on the back side in the region of the cavity 123, and then the carrier 120 is additionally coated on the back side in the region of the converter material 130 and the reflective coating 128 is removed on the back side. According to the configuration shown here, Fig. 20 and Fig.21 Execute the steps. In the manner described, Fig.25 The carrier 120 of the coating of the conversion element 110 shown in FIG. 1 does not have a shape that surrounds the conversion material 130 in the region of the recess 115. However, it is also possible to correspond to Fig.12 and Fig.13 by a means not shown.

[0125] In order to make Fig.26 , then proceed as described above, i.e., an emitter group 240 consisting of radiation-emitting semiconductor chips 140 is formed on the conversion element 110, a stabilization layer 160 is formed, a contact structure 170 is formed, and singulation is performed if necessary. The partial filling of the cavity 123 of the carrier 120 causes the cutout 124 of the carrier 120 of the conversion element 110, which extends out of the cavity 123, to have no conversion material 130 in a subregion of the front side or the emission side. In this subregion, beam guidance or beam shaping can be achieved during the light-emitting operation of the light-emitting device 100. In this case, the cutout 124 of the carrier 120 provided with the reflective coating 128 can be used as a beam guide for directing the light radiation emitted by the pixel 105 forward.

[0126] Figure 27 to Figure 29 The production of a light emitting device 100 according to another configuration is shown in detail according to a lateral sectional view. Figures 7 to 11 The production of the conversion element 110 is performed so that Fig. 27 As shown in FIG. 1 , the cavity 123 of the carrier 120 is completely filled with a conversion material 130. The conversion material 130 used is a binding material or matrix material 131 containing luminescent material particles 132 (see FIG. 1 ). Figure 3 ), the adhesive material or matrix material can be introduced into the cavity 123 of the carrier 120 by spraying, dosing or using a scraper as described above. In this design, a greater thickness can also be set for the carrier 120 and a greater depth extension can be set for the cavity 123 of the carrier.

[0127] In addition, as in Fig. 27 and Fig.28 As shown in , the deposition is performed so that the light emitting material particles 132 settle toward the bottom or bottom surface of the cavity 123. Fig. 27, the force action 231 causing the deposition is indicated by the arrow. The deposition can be caused by the influence of gravity over time or by centrifugation. In this way, the conversion material 130 can have a density of luminescent material particles 132 that increases toward the bottom of the cavity 123. Here, the luminescent material particles 132 can be concentrated in the area of ​​the bottom of the cavity 123, in the sub-area on the front side of the cavity 123, only or substantially only the matrix material 131 can be present and no or substantially no luminescent material particles 132, and there can be a transition or gradual transition in between with respect to the size of the density of the luminescent material particles 132.

[0128] Used to make Fig.29 A further method sequence for the luminous device 100 depicted in FIG. 1 is carried out in the manner described above. In this case, the conversion element 110 is first produced by opening the carrier 120 on the rear side in the region of the cavity 123 and then coating the carrier 120 on the rear side in the region of the conversion material 130 and removing the reflective coating 128 on the rear side. Fig. 20 and Fig.21 Perform the steps so that Fig.29 , the carrier 120 of the converter element 110 does not have a shape that surrounds the converter material 130 in the region of the recess 115. However, it is also possible to Fig.12 and Fig.13 In a manner not shown. Steps are then carried out, such as forming an emitter group 240 consisting of radiation-emitting semiconductor chips 140 on the conversion element 110, forming a stabilization layer 160, forming a contact structure 170 and, if necessary, performing a singulation. The deposition causes the cutout 124 of the carrier 120 of the conversion element 110, which protrudes from the cavity 123, to have only or substantially only the matrix material 131 and no or substantially no luminescent material particles 132 in a sub-region on the front side or the emission side, so that beam guidance or beam shaping can be achieved in the light-emitting operation of the light-emitting device 100 in the sub-region. In this case, the cutout 124 of the carrier 120 provided with the reflective coating 128 can also be used as a forward-oriented beam guide for the emitted light radiation. The luminescent material particles 132 that cause the radiation conversion are concentrated in a sub-region on the back side of the cutout 124 of the carrier. Between the sub-region on the front side and the sub-region on the back side of the cutout 124, there can be a varying density of the luminescent material particles 132.

[0129] according to Figure 27 to Figure 29 A variation of the method described consists in that the cavity 123 of the carrier 120 is only partially filled with the converter material 130 (not shown).

[0130] Figure 30 to Figure 33 The production of a luminous device 100 according to another configuration is shown in detail according to a lateral sectional view. The production of the conversion element 110 is first similar to Figures 7 to 11 is performed, wherein the cavity 123 of the carrier 120 is produced so that Fig.30 As shown in FIG, the cavity 123 does not have side walls extending perpendicularly to the bottom surface, but instead extending obliquely thereto. Here, the cavity 123 has a cross-sectional shape that widens in a direction away from the bottom surface. In addition, corresponding to Fig.23 The conversion material 130 is introduced into the cavity 123 so that Fig.30 , the cavity 123 is only partially filled with the converter material 130. In this configuration, a greater thickness can also be provided for the carrier 120 and a greater depth extension can be provided for the cavity 123 of the carrier. The material removal for removing the reflective coating 128 in the region of the front side 111 of the carrier 120 can be performed after or also before the converter material 130 is introduced into the cavity 123.

[0131] As in Fig.31 and Fig.32 As shown in , the carrier 120 is then opened on the back side in the region of the cavity 123 and then the carrier 120 is further coated on the back side in the region of the converter material 130 and the reflective coating 128 is removed on the back side. Fig. 20 and Fig.21 Perform the steps so that Fig.32 As shown in FIG, the carrier 120 of the converter element 110 does not have a shape that surrounds the converter material 130 in the region of the recess 115. However, it is also possible to have a shape that corresponds to Fig.12 and Fig.13 In the case of the converter element 110 produced in the described manner, the cutout 124 of the carrier 120 protruding from the cavity 123 has, except in the region of the recess 115 , a cross-sectional shape that widens in a direction away from the recess 115 .

[0132] In order to make Fig.33 , the light emitting device 100 shown in , proceeds as described above, namely forming an emitter group 240 consisting of radiation-emitting semiconductor chips 140 on the conversion element 110, forming a stabilization layer 160, forming a contact structure 170 and, if necessary, performing singulation. In this configuration, the recess 124 of the carrier 120 of the conversion element 110, which widens in the direction away from the radiation-emitting semiconductor chips 140 and is provided with a reflective coating 128, can be used as a reflector structure, by means of which beam shaping can be achieved in the light-emitting operation of the light emitting device 100.

[0133] according to Figure 30 to Figure 33 A variant of the method described consists in that the cavity 123 of the carrier 120 is completely filled with the converter material 130 and / or a deposition of phosphor particles 132 takes place (not shown).

[0134] Fig.34 and Fig.35 The production of a luminous device 100 with another configuration of a contact structure 170 is shown in detail according to a lateral sectional view. Fig.17 , so that the stabilization layer 160 projects beyond the contacts 148 of the radiation-emitting semiconductor chip 140 on the rear side and covers the contacts. Instead of grinding, material of the stabilization layer 160 is removed on the rear side in the region of the contacts 148, so that Fig.34 As shown in the figure, an opening 177 extending to the contact portion 148 is formed in the stabilization layer 160. Subsequently, a contact structure 170 is formed adjacent to the stabilization layer 160 and the back side of the contact portion 148 of the semiconductor chip 140. The contact structure 170 includes a metal conductor structure 171 that is electrically connected to the contact portion 148 and partially present in the opening 177, and an electrically insulating material 175 surrounding the conductor structure 171. The conductor structure 171 forms a contact surface 172 on the back side of the light-emitting device 100. The contact structure 170 can be manufactured by successively applying a metal material and a dielectric material together with corresponding structuring steps. It is also possible to omit the insulating material 175 used as a passivation portion, so that the conductor structure 171 can only be adjacent to the stabilization layer 160 and the contact portion 148. The contact structure 170 and Fig.35 Corresponding configurations are also conceivable for the above-described and below-described structural forms of the lighting device 100 .

[0135] The formation of the emitter array 240 composed of radiation-emitting semiconductor chips 140 on the conversion element 110 can be carried out not only by mounting individual semiconductor chips 140 but also monolithically, ie at the wafer level, using the wafer 242. Possible configurations are explained in more detail below.

[0136] Figures 36 to 42 The production of a luminous device 100 according to another configuration is shown in detail according to a lateral sectional view. The converter element 110 used here can again be a converter element composite or a converter element wafer for a plurality of luminous devices 100 and can be divided into a plurality of luminous devices 100 in a singulation performed at the end of the method. To produce the converter element 110, firstly a converter element corresponding to Figures 7 to 11 to provide Fig.36 . However, based on this, no selective material removal is performed in the region of the cavity 123 of the carrier 120 containing the converter material 130. Instead, a large-area material removal is performed on the back side 112 of the carrier 120, for example by grinding with a grinding tool. Thus, as in Fig.37, the converter material 130 is exposed at the back side 112, and the cutout 124 containing the converter material 130 protrudes from the cavity 123 of the carrier 120 and forms the converter section 113 in this regard. In the process, at least the original carrier material (silicon) of the carrier 120 and the material of the reflective coating 128 and, if necessary, also a part of the converter material 130 are removed. In the converter element 110 produced in this way, the back side 112 is flat. The carrier 120 of the converter element 110 also has a cutout 124 with a straight inner side in the cross section. The reflective coating 128 is only present on the inner side of the cutout 124.

[0137] In the present method sequence, an undivided wafer 242 is provided instead of individual radiation-emitting semiconductor chips 140 and is arranged on the converter element 110. Fig.38 , a wafer 242 has a radiation-transmissive substrate 245 on the front side, a separate semiconductor layer sequence 146 arranged side by side on the back side on the substrate 245 and configured for generating radiation, and a back-side contact 148 connected to the semiconductor layer sequence 146. The substrate 245 can be a sapphire substrate. The semiconductor layer sequence 146 can be electrically controlled via the contact 148 for generating radiation. The semiconductor layer sequence 148 can correspond in lateral dimensions to the conversion section 113 of the conversion element 110.

[0138] In order to place the wafer 242 on the conversion element 110, as in Fig.39 , the wafer 242 is connected with its substrate 245 via a transparent connecting material 250 to the conversion element 110 or to the back side 112 of the conversion element 110. In order to connect the wafer 242 and the conversion element 110, a wafer bonding method or adhesive bonding can be performed. The connecting material 250 can be a transparent adhesive material, for example a silicone adhesive. The wafer 242 and the conversion element 110 are brought together so that, when viewed in a top view of the wafer 242 and the conversion element 110, the semiconductor layer sequence 146 is respectively located in the region of the conversion section 113 of the conversion element 110.

[0139] Then, as in Fig.40 As shown in , the wafer 242 is cut from its back side so that an emitter group 240 consisting of divided radiation-emitting semiconductor chips 140 arranged on the back side 112 on the conversion element 110 is provided. Cutting of the wafer 242 can be performed mechanically, for example by sawing. By cutting, separation trenches 255 are formed, which are located between the semiconductor chips 140 and separate the semiconductor chips from each other. The separation trenches 255 can laterally surround the semiconductor chips 140 and exist in the form of a connected, grid-like trench structure in a top view. As shown in Fig.40As shown in , the cutting is performed in such a way that material of the wafer 242, part of the connecting material 250 and material of the conversion element 110 are removed. With respect to the wafer 242, the material removal relates to the substrate 245 and, if necessary, to the semiconductor layer sequence 146 on its lateral sides. With respect to the conversion element 110, material of the reflective coating 128, the original carrier material (silicon) of the carrier 120 and, if necessary, part of the conversion material 130 are removed. As shown in Fig.40 As further shown in , the cutting can be performed in multiple stages, so that the separating trenches 255 have a stepped configuration in cross section.

[0140] The radiation-emitting semiconductor chip 140 formed by slicing the wafer 242 is a volume emitter having a radiation-transmissive chip substrate 145 on the front side protruding from the substrate 245, a semiconductor layer sequence 146 for generating radiation arranged on the chip substrate 145 on the back side, and a back-side contact 148. Figure 5 The semiconductor chip 140 is connected to the conversion element 110 or to its conversion material 130 via the connection material 250 and is oriented such that the front side 141 of the semiconductor chip 140 faces the conversion element 110 and the opposite back side 142 faces away from the conversion element 110. It can be cut so that, as in Fig.40 It is shown in Figure 1 On the contrary, the lateral dimensions of the semiconductor chip 140 correspond to the lateral dimensions of the cutout 124 of the carrier 120 and of the conversion section 113 of the conversion element 110 .

[0141] Then, if Fig.41 As shown in FIG, a converter element 110 carrying an emitter group 240 composed of radiation-emitting semiconductor chips 140 is subjected to additional backside coating or metal coating, and a stabilization layer 160 is formed. By means of the coating, a reflective coating 128 is additionally formed on the semiconductor chip 140 or on the back side 142, the contacts 148 and the lateral side walls 143 of the semiconductor chip, and also on the converter element 110 between the semiconductor chips 140. In order to avoid possible short circuits due to the reflective coating 128, an insulating or dielectric layer can be produced in advance in the region of the semiconductor layer sequence 146 and the contacts 148 of the semiconductor chip 140, on which the reflective coating 128 can be formed (not shown).

[0142] The stabilization layer 160 is then formed such that the stabilization layer 160 is located in the separation trenches 255 and thus laterally and between the semiconductor chips 140, and is also present on the rear side of the semiconductor chip 140 and protrudes beyond the semiconductor chip 140 on the rear side. The stabilization layer 160 adjoins the reflective coating 128. As described above, the stabilization layer 160 can be produced by performing a molding process or by means of casting.

[0143] After this or after the stabilization layer 160 hardens, as Fig.42 As shown in , a portion of the stabilization layer 160 and a portion of the reflective coating 128 present in the region of the contact 148 of the semiconductor chip 149 are removed to expose the back surface of the contact 148 of the semiconductor chip 140 that emits radiation. For this purpose, grinding or flattening can be performed. It is feasible that the contact 148 of the semiconductor chip 140 itself can be used as a contact for contacting the light-emitting device 100 manufactured according to the process of the present method and for supplying power to the light-emitting device. Therefore, the light-emitting device 100 can be made by flattening. It is also feasible that after flattening, there is a composite composed of a plurality of connected light-emitting devices 100, which can then be separated into a plurality of light-emitting devices 100 by performing segmentation. In the process, cutting the conversion element 110 and the stabilization layer 160 (not shown) between the conversion section 113 and the semiconductor chip 140 is performed.

[0144] The above-described process flow using the wafer 242 enables the manufacture of the light-emitting device 100 with a constant spacing between the light-emitting pixels 105. It can be used here that by cutting the wafer 242 connected to the conversion element 110 to form the radiation-emitting semiconductor chips 140, the corresponding orientation and spacing between the semiconductor chips 140 can be determined with high precision. Positioning changes that may occur when installing the individual chips can be avoided. As a result, it is also possible to produce a conversion element 110 with a conversion section 113, which has a relatively small and constant spacing relative to each other, and in coordination with this, semiconductor chips 140 with a relatively small and constant spacing relative to each other can be provided. In this way, the light-emitting device 100 can be realized so that the variation of the spacing between the pixels 105 is minimized, and the distance between the pixels 105 is also minimized.

[0145] exist Fig.42 In the light emitting device 100 shown in FIG. 1 , the lateral side walls 143 of the radiation-emitting semiconductor chip 140 are covered with a reflective coating 128 so that the primary light radiation 201 (see FIG. 1 ) generated by the semiconductor chip 140 is not Figure 5 ) can be reflected at the location. In the embodiment described, it can be considered that, in contrast to the above-mentioned variant, the stabilization layer 160 is a non-reflective layer and in this respect is Figure 4 In contrast, it consists only of plastic material 161 and is free of reflective particles 162. Fig.42 In the luminous operation of the luminous device 100 shown in FIG. 1 , the conversion section 113 of the conversion element 110 can transmit the primary light radiation 201 generated by the semiconductor chip 140 only via the front side 141 of the semiconductor chip 140 .

[0146] The above-described method sequence using the wafer 242 can be modified in various ways. For example, it is conceivable to omit the radiation-emitting semiconductor chip 140 and the converter element 110 according to Fig.41 The stabilization layer 160 can thus be produced adjacent to the semiconductor chip 140. In order to cause a radiation reflection at the lateral side walls 143 of the semiconductor chip 140, the stabilization layer 160 can correspond to Figure 4 The design shown in FIG. 1 is formed as a reflective layer. Another variant is that the contact portion 148 of the semiconductor chip 140 is not used to contact the light-emitting device 100, but instead a back-side contact structure 170 electrically connected to the contact portion 148 of the semiconductor chip 140 is formed here. This can be done after the flattening for exposing the contact portion 148 (see Fig.42 Here, the contact structure 170 may be as described above with respect to Fig.18 It is also conceivable to omit the flattening and replace it with Fig.34 and Fig.35 In a corresponding manner, a rear-side contact structure 170 (not shown in each case) is formed, in particular by opening the stabilization layer 160 in the region of the contacts 148 of the semiconductor chip 140 .

[0147] A further possible modification may be that the converter element 110 is produced such that the cutouts 124 of the carrier 120 are partially filled with the converter material 130 and no converter material 130 is present in a subregion on the front side or the emission side and / or the converter material 130 is present in the form of a deposit in the cutouts 124 of the carrier 120, so that the luminescent material particles 132 of the converter material 130 are concentrated towards the semiconductor chip 140. This can be achieved by: Fig.23 The conversion material 130 is introduced into the cavity 123 of the carrier 120 in a manner corresponding to Fig. 27 and Fig.28 It is also possible to produce a conversion element 110 having a cutout 124 which widens in a direction away from the semiconductor chip 140 in that the carrier 120 is deposited in a manner corresponding to Fig.30 The cavity 123 (not shown respectively) is provided in a manner having a cross-sectional shape widening in a direction away from the bottom surface.

[0148] Fig.43 and Fig.44 The production of a light emitting device 100 according to another configuration is shown in detail according to a lateral sectional view using a wafer 242. Figures 36 to 40 is performed in order to provide a conversion element 110 carrying an emitter group 240 consisting of radiation-emitting semiconductor chips 140. Fig.43 As shown in , a transparent material 151 is introduced into the separation trenches 255 between the semiconductor chips 140, and the lateral side walls 143 of the semiconductor chips 140, a small part of the connecting material 250 and the back side 112 of the conversion element 110 between the semiconductor chips 140 are wetted with the transparent material. The process can be carried out by dosing or dispensing the transparent material 151. The wetting of the side walls 143 of the semiconductor chip 140 and the conversion element 110 is carried out in such a way that the transparent material 151 is formed in a transparent layer 150 laterally adjacent to the semiconductor chip 140, and the transparent layer has a layer surface 155 that extends in a curved and / or inclined manner relative to the side walls 143 of the semiconductor chip 140 in the region of the side walls 143. The transparent layer 150 in the separation trenches 255 is present in the form of a layer that is connected and laterally surrounds all the semiconductor chips 140. In the separation trenches 255, as in Fig.43 As shown in , the transparent layer 150 may have a surface profile with a parabolic cross section. The transparent material 151 used may be a plastic material or an adhesive material, such as a silicone adhesive.

[0149] Subsequently or after the transparent layer 150 is hardened, additional processes are performed to provide Fig.44 1 . This includes forming a reflective stabilizing layer 160, which is present laterally and between the semiconductor chip 140 and is adjacent to the transparent layer 150. The stabilizing layer 160 is also present on the back side of the semiconductor chip 140 and is flush with the back side of the contact 148 of the semiconductor chip 140. Forming the stabilizing layer 160 for enclosing the semiconductor chip 140 may include performing a molding process or a casting process and, if necessary, may include grinding, as long as the stabilizing layer 160 initially protrudes beyond the semiconductor chip 140 on the back side. After forming the stabilizing layer 160, singulation may also be performed in that the conversion element 110, the transparent layer 151 and the stabilizing layer 160 are cut apart between the conversion section 113 and the semiconductor chip 140 (not shown).

[0150] exist Fig.44 In the luminous device 100 shown in FIG. 1 , the conversion section 113 of the conversion element 110 can not only transmit the light radiation 201 emitted via the front side 141 of the semiconductor chip 140, but also enables efficient utilization of the portion of the light radiation 201 emitted via the lateral side walls 143 (see Figure 5). Due to the layer surface 155 of the transparent layer 150 extending obliquely and / or curved relative to the side wall 143 in the region of the side wall 143, the reflective stabilizing layer 160 can also have a layer surface extending obliquely and / or curved relative to the side wall 143 in the region of the semiconductor chip 140 and form a reflector structure surrounding the semiconductor chip 140. As a result, the stabilizing layer 160 can be used to cause radiation reflection of the optical radiation 201 emitted via the side wall 143 of the semiconductor chip 140 and coupled into the transparent layer 150 toward the conversion element 110 and thus deflect the radiation, so that the radiation component can be partially supplied to the conversion section 113 (not shown) of the conversion element 110 when it is coupled back into or re-transmitted through the semiconductor chip 140 or its chip substrate 145.

[0151] For according to Fig.43 and Fig.44 The method flow described can be modified, such as referring to Figures 36 to 42 As explained in the method flow of . For example, it is possible to form a back-side contact structure 170 which is electrically connected to the contact 148 of the radiation-emitting semiconductor chip 140. Furthermore, the recess 124 of the carrier 120 of the converter element 110 can be partially filled with a converter material 130, which can be present in the form of a deposit in the recess 124, and / or the recess 124 of the carrier 120 can have a shape which widens in a direction away from the semiconductor chip 140 (not shown in each case).

[0152] In addition to the embodiments described above and depicted in the accompanying drawings, other embodiments are conceivable that may include other modifications and / or feature combinations.

[0153] For example, instead of the above-mentioned materials, another material may be used for the light emitting device 100 and its components.

[0154] For example, it is possible for the carrier 120 of the converter element 110 to consist of a ceramic material, of silicone filled with reflective or scattering particles (eg TiO 2 particles), of a plastic material, of a plastic with a highly reflective coating, or of glass with a highly reflective coating.

[0155] References Figures 20 to 44 A further modification of the described method sequence and the luminous device 100 consists in forming the conversion element 110 without the reflective coating 128 .

[0156] Although the details of the present invention have been illustrated and described in detail through the preferred embodiments, the present invention is not limited to the disclosed examples and other variations can be derived therefrom by those skilled in the art without departing from the scope of protection of the present invention.

[0157] Reference numerals list

[0158] 100 Lighting equipment

[0159] 101 front

[0160] 102 dorsal

[0161] 105 pixels

[0162] 110 conversion element

[0163] 111 front

[0164] 112 back

[0165] 113 Conversion section

[0166] 115 concavity

[0167] 116 Stop Edge

[0168] 120 Carrier

[0169] 123 cavity

[0170] 124 blank space

[0171] 128 Reflective coating

[0172] 130 Conversion Materials

[0173] 131 Adhesive material

[0174] 132 Luminescent Material Particles

[0175] 140 Semiconductor Chip

[0176] 141 front

[0177] 142 dorsal

[0178] 143 Sidewall

[0179] 145 Chip Substrate

[0180] 146 Semiconductor layer sequence

[0181] 148 Contact Department

[0182] 150 Transparent Layer

[0183] 151 Transparent materials, adhesive materials

[0184] 155 layers of surface

[0185] 160 Stable Layer

[0186] 161 Plastic materials

[0187] 162 Reflective particles

[0188] 170 Contact structure

[0189] 171 Conductor structure

[0190] 172 contact surface

[0191] 175 Insulation Materials

[0192] 177 Opening

[0193] 201 Light Radiation

[0194] 202 Light Radiation

[0195] 211 nozzle

[0196] 212 Metering nozzle

[0197] 214 Grinding tools

[0198] 221 separation line

[0199] 231 Force

[0200] 240 Transmitter Group

[0201] 242 Chips

[0202] 245 Substrate

[0203] 250 Connecting material

[0204] 255 Separation Groove

Claims

1. A method for manufacturing a light emitting device (100), the method comprising: A structured conversion element (110) is provided, the conversion element having individual conversion segments (113) arranged next to one another for radiation conversion, wherein the conversion element (110) has a carrier (120) with a recess (124), the recess containing a conversion material (130), the recess (124) of the carrier (120) being in the form of a through-cut recess, and wherein the conversion segments (113) are each formed by a recess (124) of the carrier (120) containing the conversion material (130); An emitter group (240) composed of radiation-emitting semiconductor chips (140) arranged on the conversion element (110) is formed on one side (112) of the conversion element (110), wherein each radiation-emitting semiconductor chip (140) is present in the region of the conversion section (113); and A stabilization layer (160) is formed at least laterally on and between the radiation-emitting semiconductor chips (140).

2. The method according to claim 1, The conversion element (110) includes: A carrier (120) having the following design is provided, in which the carrier (120) has a cavity (123); introducing a conversion material (130) into the cavity (123) of the carrier (120); and At least material of the carrier (120) is removed, so that a recess (124) of the carrier (120) containing a converter material (130) is formed from a cavity (123) of the carrier (120).

3. The method according to any one of the preceding claims, wherein the conversion material (130) is introduced into the cavity (123) of the carrier (120) such that the cavity (123) of the carrier (120) is partially filled with the conversion material (130), and / or wherein the deposition is performed after the conversion material (130) has been introduced into the cavity (123) of the carrier (120).

4. The method according to any one of the preceding claims, The cavity (123) of the carrier (120) has a bottom surface and a cross-sectional shape that widens in a direction away from the bottom surface.

5. The method according to any one of the preceding claims, The providing of the converter element (110) comprises forming the carrier (120) with a reflective coating (128), and the reflective coating (128) is present at least in the region of a recess (124) of the carrier (120).

6. The method according to any one of the preceding claims, The radiation-emitting semiconductor chip (140) has a contact (148) on a rear side (142), and the emitter group (240) is formed on the converter element (110) such that a front side (141) of the radiation-emitting semiconductor chip (140) faces the converter element (110).

7. The method according to any one of the preceding claims, A contact structure (170) connected to a contact (148) of the radiation-emitting semiconductor chip (140) is formed in the region of a side (142) of the radiation-emitting semiconductor chip (140) facing away from the converter element (110).

8. The method according to any one of the preceding claims, The radiation-emitting semiconductor chip (140) is a volume emitter.

9. The method according to any one of the preceding claims, The stabilizing layer (160) is a reflective layer.

10. The method according to any one of the preceding claims, wherein at least in the region of a lateral side wall (143) of the radiation-emitting semiconductor chip (140) a transparent layer (150) is formed adjacent to the radiation-emitting semiconductor chip (140), the transparent layer having in the region of the side wall (143) a layer surface (155) which runs in a curved and / or inclined manner relative to the side wall (143) of the radiation-emitting semiconductor chip (140), The stabilizing layer (160) is formed adjacent to the transparent layer (150), And wherein, due to the curved and / or inclined layer surface (155) of the transparent layer (150), the stabilization layer (160) forms a reflector structure surrounding the radiation-emitting semiconductor chip (140).

11. The method according to any one of the preceding claims, The emitter group (240) is formed on the converter element (110) in such a way that the radiation-emitting semiconductor chip (140) is provided and arranged on the converter element (110).

12. The method according to claim 11, wherein the conversion element (110) has a recess (115) in the region of the conversion section (113) on a side (112) provided for the transmitter group (240), wherein the radiation-emitting semiconductor chip (140) is arranged in the region of a recess (115) of the converter element (110) using a transparent adhesive material (151), wherein a transparent layer (151) is formed adjacent to the radiation-emitting semiconductor chip (140) in the region of the front side (141) and the side walls (143) by the adhesive material (151) or by the adhesive material (151) and additionally applying the adhesive material (151) in the region of the lateral side walls (143) of the radiation-emitting semiconductor chip (140), respectively, wherein the recess (115) of the converter element (110) serves as a stop edge (116) for the adhesive material (151), so that the transparent layer (150) in the region of the side wall (143) has a layer surface (155) which runs in a curved and / or inclined manner relative to the side wall (143) of the radiation-emitting semiconductor chip (140), wherein the stabilization layer (160) is formed adjacent to a transparent layer (150) present in the region of the radiation-emitting semiconductor chip (140), And wherein, due to the curved and / or inclined layer surface (155) of the transparent layer (150), the stabilization layer (160) forms a reflector structure surrounding the radiation-emitting semiconductor chip (140).

13. The method according to any one of claims 1 to 10, The emitter group (140) is formed on the conversion element (110) such that a wafer (242) for the radiation-emitting semiconductor chips (140) is provided, the wafer (242) is arranged on the conversion element (110) and is subsequently separated into the radiation-emitting semiconductor chips (140) by dicing.

14. The method according to claim 13, wherein a transparent material (151) is applied in the region of lateral side walls (143) of the radiation-emitting semiconductor chip (140) in order to form a transparent layer (150) adjacent to the radiation-emitting semiconductor chip (140), the transparent layer having a layer surface (155) in the region of the side walls (143) which runs in a curved and / or inclined manner relative to the side walls (143) of the radiation-emitting semiconductor chip (140), The stabilizing layer (160) is formed adjacent to the transparent layer (150), And wherein, due to the curved and / or inclined layer surface (155) of the transparent layer (150), the stabilization layer (160) forms a reflector structure surrounding the radiation-emitting semiconductor chip (140).

15. A lighting device (100), comprising: A structured conversion element (110) having individual conversion segments (113) arranged next to one another for radiation conversion, wherein the conversion element (110) has a carrier (120) with a recess (124) containing a conversion material (130), wherein the recess (124) of the carrier (120) is in the form of a through-cut recess, and wherein the conversion segments (113) are each formed by a recess (124) of the carrier (120) containing the conversion material (130); an emitter group (240) consisting of radiation-emitting semiconductor chips (140) arranged on the conversion element (110) at one side (112) of the conversion element (110), wherein each radiation-emitting semiconductor chip (140) is present in the region of the conversion section (113); and A stabilization layer (160) is formed at least laterally on and between the radiation-emitting semiconductor chips (140).

16. A light emitting device according to claim 15, wherein the recess (124) of the carrier (120) is partially filled with a converter material (130) and is free of the converter material (130) in an emission-side subregion, and / or wherein the converter material (130) is formed in deposited form in a recess (124) of the carrier (120), And / or wherein the recess (124) of the carrier (120) has an at least partially widened cross-sectional shape in a direction away from a side (112) of the converter element (110) provided for the emitter group (240).

17. A light emitting device according to any one of claims 15 or 16, The carrier (120) comprises a reflective coating (128) at least in the region of the cutout (124).

18. A light emitting device according to any one of claims 15 to 17, wherein the radiation-emitting semiconductor chip (140) has a contact (148) on a rear side (142) and a front side (141) of the radiation-emitting semiconductor chip (140) faces the converter element (110), And / or wherein the light-emitting device comprises, in the region of a side (142) of the radiation-emitting semiconductor chip (140) facing away from the converter element (110), a contact structure which is connected to a contact (148) of the radiation-emitting semiconductor chip (140).

19. A light emitting device according to any one of claims 15 to 18, wherein the radiation-emitting semiconductor chip (140) is a volume emitter, And / or wherein the stabilization layer (160) is a reflective layer.

20. A light emitting device according to any one of claims 15 to 19, wherein a transparent layer (150) is formed adjacent to the radiation-emitting semiconductor chip (140) at least in the region of a lateral side wall (143) of the radiation-emitting semiconductor chip (140), the transparent layer having in the region of the side wall (143) a layer surface (155) which runs in a curved and / or inclined manner relative to the side wall (143) of the radiation-emitting semiconductor chip (140), The stabilizing layer (160) adjoins the transparent layer (150) and forms a reflector structure surrounding the radiation-emitting semiconductor chip (140) due to the curved and / or inclined layer surface (155) of the transparent layer (150).

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