Deposition equipment with shutter cooling device

Abstract

The invention relates to deposition equipment with a curtain board cooling device. The deposition equipment comprises a cavity, a curtain board, a fixing ring, a bearing disc and the cooling device, one end of the shielding plate is connected with the cavity, and the other end is used for bearing the fixing ring. The bearing disc is used for bearing a wafer, and the bearing disc is located below the fixing ring and can drive the borne wafer to move relative to the fixing ring and the shielding plate, so that the fixing ring makes contact with the edge of the wafer, and the wafer is fixed to the bearing disc. The cooling device is connected with the fixing ring, cooling fluid is arranged in the cooling device, and heat is received by the fixing ring in a heat conduction mode so as to reduce the temperature of the fixing ring. By reducing the temperature of the fixing ring, a thin film can be prevented from being formed at the junction of the fixing ring and the wafer, and adhesion between the fixing ring and the wafer can be effectively prevented.

Description

Technical Field

[0001] The invention relates to a deposition device with a shield cooling device, which can effectively prevent a fixed ring and a wafer from sticking during a deposition process. Background Art

[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) are all commonly used thin film deposition equipment and are widely used in processes such as integrated circuits, light-emitting diodes and displays.

[0003] The deposition equipment mainly includes a chamber and a carrier plate, wherein the carrier plate is located in the chamber and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the chamber, wherein the target material faces the wafer on the carrier plate. When performing physical vapor deposition, the wafer will be fixed on the carrier plate by a fixing device, and an inert gas and / or a reaction gas will be transported into the chamber, and a bias voltage will be applied to the target material and the carrier plate respectively, wherein the carrier plate will also heat the carried wafer. The inert gas in the chamber will form ionized inert gas due to the action of the high voltage electric field. The ionized inert gas will be attracted by the bias voltage on the target material and bombard the target material. The target atoms or molecules splashed from the target material will be attracted by the bias voltage on the carrier plate and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

[0004] When performing physical vapor deposition or atomic layer deposition processes, long-term and continuous coating is usually required to meet production capacity requirements, so that the components inside the chamber are kept at high temperatures for a long time. When the temperature of the components in the chamber rises to the melting point of the deposited metal, the deposited metal may flow to the interface between the components and the wafer, causing the components and the wafer to stick together, causing the wafer to shift on the carrier, and thus causing abnormal output of subsequent wafers or damage to the wafer. Summary of the invention

[0005] In order to avoid the problems described in the prior art, the present invention proposes a novel deposition device with a shield cooling device. During the deposition process, the cooling device can reduce the temperature of some components in the deposition chamber to prevent the wafer from sticking to the components in the deposition chamber.

[0006] One object of the present invention is to provide a deposition device with a shield cooling device, comprising a chamber, a carrier plate, a fixed ring, a shield and a cooling device, wherein the carrier plate is used to carry at least one wafer. One end of the shield is connected to the chamber, and the other end is used to carry the fixed ring. When the carrier plate drives the carried wafer to approach the fixed ring, the fixed ring will contact the edge of the wafer to fix the wafer on the carrier plate, and form a reaction space between the shield, the fixed ring, the carrier plate and / or the chamber.

[0007] The cooling device contacts the fixed ring and / or the shield, wherein a circulating cooling fluid is provided inside the cooling device. The cooling device can absorb the heat of the fixed ring and / or the shield by heat conduction to reduce the temperature of the fixed ring and / or the shield, and can effectively prevent the wafer from sticking to the fixed ring.

[0008] One object of the present invention is to provide a deposition device with a shield cooling device, wherein the cooling device can continuously absorb the heat of the fixed ring and / or the shield during the thin film deposition process to prevent the fixed ring and / or the shield from overheating. By setting the cooling device, there is no need to interrupt the deposition process, and inject cooling gas into the cavity to reduce the temperature of the internal components of the cavity, which is conducive to improving the efficiency and production capacity of the deposition process.

[0009] One purpose of the present invention is to provide a deposition device with a shield cooling device, wherein the cooling fluid in the cooling device can be an inert gas or a non-reactive gas. Even if the cooling fluid leaks into the interior of the cavity, it will not cause contamination to the components and wafers inside the cavity, and is conducive to improving safety of use.

[0010] In order to achieve the above-mentioned purpose, the present invention proposes a deposition equipment with a shield cooling device, including: a chamber having a accommodating space; a shield connected to the chamber and located in the accommodating space of the chamber, wherein the shield includes an annular protrusion; a fixing ring located in the accommodating space of the chamber and arranged on the annular protrusion of the shield; a cooling device, contacting the fixing ring and lowering the temperature of the fixing ring by a cooling fluid in the cooling device; and a carrying plate, arranged in the accommodating space of the chamber and located below the fixing ring, wherein the carrying plate is used to carry a wafer.

[0011] The deposition equipment with the shield cooling device, wherein the cooling device includes a cooling pipeline and a pump, the cooling pipeline contacts the fixed ring, and the pump is used to transport the cooling fluid to the cooling pipeline.

[0012] In the deposition equipment with the shield cooling device, the shield includes at least one through hole, and the cooling pipeline passes through the through hole and contacts the fixing ring.

[0013] The deposition equipment with a baffle cooling device, wherein the cooling pipeline includes an annular cooling part and two delivery pipelines, the annular cooling part contacts the fixed ring, and the cooling fluid is delivered to the annular cooling part by one of the delivery pipelines and leaves the annular cooling part through the other delivery pipeline.

[0014] The deposition equipment with the baffle cooling device, wherein the annular cooling part of the cooling pipeline is arranged on the baffle and contacts the baffle and the fixing ring, and the conveying pipeline of the cooling pipeline passes through the through hole of the baffle and is connected to the annular cooling part.

[0015] In the deposition equipment with the shield cooling device, the annular cooling portion is arranged inside the fixed ring.

[0016] The deposition equipment with a baffle cooling device, wherein the baffle includes a side wall and an annular bottom, the side wall is used to connect to the cavity, and the annular bottom connects the side wall and the annular protrusion, the annular protrusion is located on the inner side of the side wall and is used to support the fixing ring.

[0017] The deposition equipment with the baffle cooling device, wherein the fixing ring includes a fixing portion and a shielding portion, the annular protrusion of the baffle is used to support the fixing portion of the fixing ring, and the shielding portion of the fixing ring is located between the side wall of the baffle and the annular protrusion.

[0018] In the deposition equipment with the shield cooling device, the cooling pipeline includes an annular cooling portion and at least one conveying pipeline, the annular cooling portion is connected to the conveying pipeline and contacts the shielding portion of the fixed ring.

[0019] In the deposition equipment with the shield cooling device, the cooling fluid is an inert gas or a non-reactive gas.

[0020] The deposition equipment with a baffle cooling device described in the present invention has the following advantages: the temperature of the baffle and / or the fixed ring can be controlled during the deposition process, the formation of a thin film at the interface between the fixed ring and the wafer can be avoided, and adhesion between the fixed ring and the wafer can be effectively prevented. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a cross-sectional schematic diagram of an embodiment of a deposition device with a shield cooling device according to the present invention.

[0022] Figure 2 It is a cross-sectional schematic diagram of an embodiment of a deposition device with a shield cooling device according to the present invention operating in a material loading and unloading state.

[0023] Figure 3 The present invention is a schematic perspective cross-sectional view of a partial structure of a deposition device having a shield cooling device according to an embodiment of the present invention.

[0024] Figure 4 It is a three-dimensional schematic diagram of an embodiment of a fixing ring and a cooling pipeline of a deposition device with a shield cooling device according to the present invention.

[0025] Figure 5 The figure is a cross-sectional schematic diagram of another embodiment of a fixing ring and a cooling pipeline of a deposition device with a shield cooling device according to the present invention.

[0026] Figure 6 The figure is a cross-sectional schematic diagram of another embodiment of a fixing ring and a cooling pipeline of a deposition device with a shield cooling device according to the present invention.

[0027] Description of Reference Numerals 10: Deposition equipment with a shutter cooling device; 11: Cavity; 111: Accommodation space; 112: Reaction space; 113: Wafer import and export; 115: air extraction port; 12: Wafer; 13: Carrying plate; 14: Target material; 15: shutter; 151: side wall; 152: Perforation; 153: annular bottom; 155: annular convex portion; 16: Vacuum pump; 161: valve; 17: fixing ring; 171: fixed part; 173: shielding part; 19: Cooling device; 191: Cooling line; 1911: Annular cooling section; 1913: Pipeline; 193: Pump; 195: Cold trough. DETAILED DESCRIPTION

[0028] See also Figure 1 , is a cross-sectional schematic diagram of an embodiment of a deposition device with a shutter cooling device of the present invention. As shown in the figure, the deposition device 10 with a shutter cooling device includes a chamber 11, a carrier plate 13, a shutter 15, a fixed ring 17 and a cooling device 19, wherein the shutter 15 is used to carry the fixed ring 17, and the carrier plate 13 is located below the fixed ring 17 and / or the shutter 15, and the carrier plate 13 can be used to drive the carried wafer 12 to move relative to the fixed ring 17 and the shutter 15.

[0029] In one embodiment of the present invention, the cooling device 19 includes a cooling line 191, a pump 193 and a cooling tank 195. The cavity 11 has a receiving space 111, and the carrier plate 13, the shield plate 15, the fixing ring 17 and the cooling line 191 are disposed in the receiving space 111 of the cavity 11.

[0030] like Figure 3As shown, the shield 15 includes a side wall 151, an annular bottom 153 and an annular protrusion 155, and the annular bottom 153 connects the side wall 151 and the annular protrusion 155. In one embodiment of the present invention, the appearance of the side wall 151 of the shield 15 is similar to a hollow column or a hollow truncated cone, wherein the side wall 151 of the shield 15 is connected to the cavity 11 to set the shield 15 on the cavity 11, and the other end of the side wall 151 is connected to the annular bottom 153.

[0031] The annular bottom 153 has an approximately circular ring-like appearance, wherein one end of the annular bottom 153 is connected to the side wall 151 of the shield 15. The annular protrusion 155 has an approximately hollow columnar or truncated cone-like appearance, wherein one end of the annular protrusion 155 is connected to the other end of the annular bottom 153, and a circular opening is formed on the radial inner side of the annular protrusion 155. Specifically, the side wall 151 and the annular protrusion 155 are respectively connected to the two ends of the annular bottom 153, and protrude or extend in the same direction, wherein the annular protrusion 155 is located on the inner side of the side wall 151, and the height and circumference of the side wall 151 are greater than the annular protrusion 155.

[0032] like Figure 2 , Figure 3 As shown, the fixing ring 17 includes a fixing portion 171 and a shielding portion 173 , wherein the fixing portion 171 may be annular, and the shielding portion 173 may be similar in appearance to a hollow column or a hollow truncated cone, and the shielding portion 173 is disposed around the annular fixing portion 171 .

[0033] The fixing ring 17 is used to be arranged on the baffle 15 , for example, the annular protrusion 155 of the baffle 15 is used to connect and support the fixing portion 171 of the fixing ring 17 , wherein the shielding portion 173 of the fixing ring 17 is located outside the annular protrusion 155 and between the annular protrusion 155 and the side wall 151 .

[0034] The carrier plate 13 is located below the fixing ring 17 and is used to carry at least one wafer 12. The carrier plate 13 can drive the carried wafer 12 to move relative to the fixing ring 17 and / or the shielding plate 15. Figure 2 As shown, a wafer inlet and outlet 113 is provided on the cavity 11, wherein the carrier plate 13 can be displaced in a direction away from the fixing ring 17 and / or the shielding plate 15, so that the height of the carrier plate 13 is close to the wafer inlet and outlet 113. Then, a robotic arm can pass through the wafer inlet and outlet 113 to place the wafer 12 outside the cavity 11 on the carrier plate 13, or the wafer 12 on the carrier plate 13 can be transported to the outside of the cavity 11 through the wafer inlet and outlet 113.

[0035] In one embodiment of the present invention, the deposition device 10 with a shutter cooling device may be a physical vapor deposition device, and a target 14 is disposed in the chamber 11, wherein the target 14 faces the carrier plate 13 and / or the wafer 12. A vacuum port 115 is disposed on the chamber 11, and the gas in the chamber 11 is extracted through the vacuum port 115 of the vacuum pump 16, so that the accommodating space 111 is low pressure or vacuum. A valve 161 may be disposed between the vacuum pump 16 and the accommodating space 111 of the chamber 11, and the valve 161 may be closed after the vacuum pump 16 extracts the gas in the chamber 11.

[0036] A process gas may be delivered into the accommodating space 111 to perform a deposition process. For example, the process gas may be an inert gas or a reactive gas. The deposition device 10 with a shutter cooling device being a physical vapor deposition device is only one embodiment of the present invention and is not a limitation of the scope of the present invention. In different embodiments, the deposition device 10 with a shutter cooling device may be an atomic layer deposition device or a plasma etching device.

[0037] like Figure 1 As shown, the carrier plate 13 can drive the carried wafer 12 to move toward the fixing ring 17, the shield plate 15 and / or the target material 14, so that the carrier plate 13 is located inside the shield plate 15, and the fixing portion 171 of the fixing ring 17 will contact the edge of the wafer 12 on the carrier plate 13 to fix the wafer 12 on the carrier plate 13. At this time, the carrier plate 13, the fixing ring 17, the shield plate 15 and the chamber 11 will define a reaction space 112 in the accommodating space 111, and thin film deposition is performed on the surface of the wafer 12 in the reaction space 112. The reaction space 112 is basically an isolated space in the accommodating space 111, wherein the reaction gas, target material atoms and / or target material molecules in the reaction space 112 will not contact the chamber 11 outside the shield plate 15, so as to avoid deposition of thin film on the surface of the chamber 11, thereby causing contamination of the chamber 11.

[0038] During the thin film deposition process, the shield 15 and the fixing ring 17 are kept at a high temperature for a long time, and a metal film is deposited on the surfaces of the wafer 12, the shield 15 and the fixing ring 17. When the temperature of the shield 15 and the fixing ring 17 is greater than or equal to the melting point of the deposited metal, the deposited metal may flow between the fixing ring 17 and the wafer 12, for example, from the fixing ring 17 to the wafer 12, so that the interface between the two has the deposited metal.

[0039] When the temperature inside the chamber 11 decreases, the deposited metal between the fixing ring 17 and the wafer 12 will solidify, so that the fixing ring 17 and the wafer 12 are bonded to each other. When the carrier plate 13 drives the wafer 12 to move away from the fixing ring 17 and the shield plate 15, the fixing ring 17 will pull the wafer 12 through the solidified deposited metal, causing the wafer 12 to move relative to the carrier plate 13, thereby causing abnormal positioning and transportation of the subsequent wafer 12. For example, the robot arm may not be able to clamp the displaced wafer 12 on the carrier plate 13. In addition, when the adhesion between the fixing ring 17 and the wafer 12 is more serious, the solidified deposited metal between the fixing ring 17 and the wafer 12 is more likely to pull the wafer 12, causing damage to the wafer 12 or the metal film on the surface of the wafer 12.

[0040] Taking thick aluminum film as an example, the molten aluminum film may flow between the fixing ring 17 and the wafer 12, and cause the fixing ring 17 and the wafer 12 to stick. In addition, during the deposition of thick aluminum film, the temperature of the wafer 12 and the inside of the chamber 11 must be controlled within an appropriate range. However, during deposition, the plasma will heat the fixing ring 17 and the shield plate 15 for a long time, causing the temperature of the fixing ring 17 and the shield plate 15 to rise and store a considerable amount of heat energy. The high-temperature fixing ring 17 will transfer heat to the wafer 12, causing the temperature of the edge of the wafer 12 to be too high, which will not only cause the film deposited on the edge of the wafer 12 to be atomized, but may also cause the film deposited on the edge of the wafer 12 to produce whisker defects (whisker defects) and bump defects (hillock defects), making the film deposition quality at the center and edge of the wafer 12 uneven.

[0041] In order to avoid the above problems, the deposition process is usually temporarily stopped and cooling gas is delivered to the interior of the chamber 11 to reduce the temperature of the shield 15 and the fixing ring 17. Although this can reduce the uneven film quality at the center and edge of the wafer 12, it will also reduce the efficiency and production capacity of the deposition process.

[0042] In order to effectively solve the above problems, the present invention proposes to set a cooling device 19 in the deposition equipment 10 with a shield cooling device, wherein the cooling device 19 contacts the fixed ring 17 and reduces the temperature of the fixed ring 17 through a cooling fluid in the cooling device 19.

[0043] In one embodiment of the present invention, the cooling device 19 includes a cooling line 191 and a pump 193, wherein the cooling line 191 is disposed in the cavity 11 and contacts the fixing ring 17. The pump 193 is used to transport the cooling fluid to the cooling line 191, so that the cooling fluid reduces the temperature of the fixing ring 17 through the cooling line 191.

[0044] The cooling device 19 includes a cold tank 195, wherein the cooling line 191 is connected to the cold tank 195 via a pump 193. The pump 193 and the cold tank 195 are located outside the cavity 11, wherein the cold tank 195 is used to store or generate a cooling fluid, and the pump 193 is used to transport the cooling fluid in the cold tank 195 to the cooling line 191. The cooling fluid can be an inert gas or a non-reactive gas, such as helium, argon, nitrogen, etc. In this way, even if the cooling fluid leaks from the cooling line 191 to the accommodating space 111 of the cavity 11, it will not cause contamination to the cavity 11, the components inside the cavity 11, and the wafer 12.

[0045] The cold tank 195 may include a compressor. When the cooling fluid is in a gaseous state at room temperature, the cold tank 195 may compress and cool the gas into a liquid or gas-liquid mixed cooling fluid, such as liquid helium, gas-liquid mixed helium, liquid argon, gas-liquid mixed argon, liquid nitrogen, or gas-liquid mixed nitrogen, etc. The pump 193 may transport the liquid or gas-liquid mixed cooling fluid to the cooling pipeline 191, so that the liquid or gas-liquid mixed cooling fluid absorbs the heat of the fixed ring 17 through the cooling pipeline 191 and is converted into a gaseous cooling fluid.

[0046] In one embodiment of the present invention, Figure 3 As shown, at least one through hole 152 may be provided on the shield 15. The cooling pipeline 191 includes an annular cooling portion 1911 and at least one delivery pipeline 1913, wherein the delivery pipeline 1913 passes through the through hole 152 on the shield 15, so that the delivery pipeline 1913 is connected to the annular cooling portion 1911 located on the other side of the shield 15, for example, the delivery pipeline 1913 may pass through the through hole provided on the side wall 151 or the annular bottom 153.

[0047] In one embodiment of the present invention, Figure 4 As shown, the cooling pipeline 191 may include an annular cooling portion 1911 and two delivery pipelines 1913, wherein the annular cooling portion 1911 contacts the fixing ring 17. The two delivery pipelines 1913 pass through the through hole 152 of the shield plate 15 and are connected to the annular cooling portion 1911, wherein one of the delivery pipelines 1913 is used to deliver the cooling fluid to the annular cooling portion 1911. After passing through the annular cooling portion 1911, the cooling fluid will leave the annular cooling portion 1911 through the other delivery pipeline 1913. In practical applications, the cooling pipeline 191, the annular cooling portion 1911 and / or the delivery pipeline 1913 may be made of a metal with a high thermal conductivity, such as a copper tube or a soft metal tube.

[0048] The size of the annular cooling portion 1911 can be similar to that of the fixing ring 17. For example, the annular cooling portion 1911 and the shielding portion 173 of the fixing ring 17 are circular rings with similar shapes and sizes when viewed from above, wherein the shielding portion 173 can be a hollow cylinder, and the annular cooling portion 1911 can be a circular ring with a similar circumference, so as to increase the contact area between the annular cooling portion 1911 and the shielding portion 173, and facilitate the cooling fluid inside the annular cooling portion 1911 to absorb the heat of the shielding portion 173 and the fixing portion 171.

[0049] In one embodiment of the present invention, a cooling fluid in a liquid state or a gas-liquid mixture state can be transported to the annular cooling portion 1911 through one of the transport pipelines 1913. The cooling fluid in a liquid state or a gas-liquid mixture state in the annular cooling portion 1911 absorbs the heat of the fixing ring 17 by heat conduction to reduce the temperature of the fixing ring 17. After absorbing the heat, the cooling fluid in a liquid state or a gas-liquid mixture state is converted into a gaseous cooling fluid and leaves the annular cooling portion 1911 through another transport pipeline 1913. In addition, the pump 193 can transport the gaseous cooling fluid to the cold tank 195, compress and cool the gaseous cooling fluid into a liquid state or a gas-liquid mixture state through the cold tank 195, and transport the liquid state or the gas-liquid mixture state cooling fluid to the annular cooling portion 1911 through the transport pipeline 1913, so as to reduce the temperature of the fixing ring 17 through the circulating cooling fluid.

[0050] In one embodiment of the present invention, the annular cooling portion 1911 may be located between the baffle 15 and the fixing ring 17, and contact the baffle 15 and the fixing ring 17 respectively, so as to reduce the temperature of the baffle 15 and the fixing ring 17. For example, the annular cooling portion 1911 may be disposed on the annular bottom 153 of the baffle 15, or between the annular bottom 153 and the annular protrusion 155. When the fixing ring 17 is placed on the annular protrusion 155 of the baffle 15, the bottom of the shielding portion 173 of the fixing ring 17 will contact the annular cooling portion 1911.

[0051] In actual application, the fixing ring 17 and / or the baffle 15 are cooled mainly through the annular cooling portion 1911 of the cooling line 191, and the delivery line 1913 of the cooling line 191 is mainly used to deliver cooling fluid, rather than to cool the fixing ring 17 and / or the baffle 15. For this reason, the delivery line 1913 and the annular cooling portion 1911 can be made of different materials, wherein the thermal conductivity of the annular cooling portion 1911 can be greater than that of the delivery line 1913, for example, the delivery line 1913 can be made of a material with a low thermal conductivity, while the annular cooling portion 1911 is made of a material with a high thermal conductivity. In another embodiment of the present invention, a layer of heat-insulating material can be coated on the outside of the delivery line 1913.

[0052] In order to increase the contact area between the annular cooling portion 1911 and the fixing ring 17 and improve the heat conduction efficiency between the two, the cross-sectional shape of the top of the annular cooling portion 1911 and the bottom of the shielding portion 173 of the fixing ring 17 can be similar or corresponding. Figure 1 As shown, when the bottom of the shielding portion 173 is a plane, the top of the annular cooling portion 1911 may also be a plane, so that the bottom of the shielding portion 173 may fit the top of the annular cooling portion 1911 .

[0053] In various embodiments, Figure 5 As shown, when the bottom of the shielding portion 173 is a concave surface or an annular groove, the top of the annular cooling portion 1911 may be a convex surface or an annular protrusion, so that the bottom of the shielding portion 173 can fit the top of the annular cooling portion 1911. When the bottom of the shielding portion 173 is a convex surface or an annular protrusion, the top of the annular cooling portion 1911 may be a concave surface or an annular groove.

[0054] In another embodiment of the present invention, Figure 6 As shown, the annular cooling portion 1911 can be disposed inside the fixing ring 17 and connected to the annular cooling portion 1911 inside the fixing ring 17 through a delivery pipeline 1913 to improve the efficiency of heat conduction.

[0055] The deposition device 10 with the shield cooling device of the present invention can continuously absorb the heat of the fixed ring 17 and / or the shield 15 during the thin film deposition process through the cooling device 19, so as to avoid the temperature of the fixed ring 17 and / or the shield 15 being too high, and reduce the formation of a metal film between the fixed ring 17 and the wafer 12. In addition, by setting the cooling device 19, the thin film deposition can be carried out uninterruptedly for a long time, which is conducive to improving the efficiency and production capacity of the deposition process.

[0056] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, all equivalent changes and modifications to the shape, structure, characteristics and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

Claims

1. A deposition device with a shield cooling device, characterized in that: include: A cavity having a containing space; a shield plate connected to the cavity and located in the accommodating space of the cavity, wherein the shield plate includes an annular protrusion; A fixing ring is located in the accommodating space of the cavity and is disposed on the annular protrusion of the shield; a cooling device, contacting the fixing ring and lowering the temperature of the fixing ring through a cooling fluid in the cooling device; and A carrier plate is arranged in the accommodating space of the cavity and is located below the fixing ring, wherein the carrier plate is used for carrying a wafer.

2. The deposition device with a shield cooling device according to claim 1, characterized in that: The cooling device includes a cooling pipeline and a pump. The cooling pipeline contacts the fixing ring, and the pump is used for conveying the cooling fluid to the cooling pipeline.

3. The deposition device with a shield cooling device according to claim 2, characterized in that: The shield includes at least one through hole, and the cooling line passes through the through hole and contacts the fixing ring.

4. The deposition device with a shield cooling device according to claim 3, characterized in that: The cooling pipeline includes an annular cooling portion and two conveying pipelines. The annular cooling portion contacts the fixing ring, and the cooling fluid is conveyed to the annular cooling portion by one of the conveying pipelines and leaves the annular cooling portion through the other conveying pipeline.

5. The deposition device with a shield cooling device according to claim 4, characterized in that: The annular cooling portion of the cooling pipeline is arranged on the baffle and contacts the baffle and the fixing ring, while the delivery pipeline of the cooling pipeline passes through the through hole of the baffle and is connected to the annular cooling portion.

6. The deposition device with a shield cooling device according to claim 4, characterized in that: The annular cooling portion is arranged inside the fixing ring.

7. The deposition device with a shield cooling device according to claim 2, characterized in that: The shield includes a side wall and an annular bottom, wherein the side wall is used to connect the cavity, and the annular bottom connects the side wall and the annular convex portion, wherein the annular convex portion is located on the inner side of the side wall and is used to carry the fixing ring.

8. The deposition device with a shield cooling device according to claim 7, characterized in that: The fixing ring includes a fixing portion and a shielding portion. The annular protrusion of the shielding plate is used to carry the fixing portion of the fixing ring, and the shielding portion of the fixing ring is located between the side wall of the shielding plate and the annular protrusion.

9. The deposition device with a shield cooling device according to claim 8, characterized in that: The cooling pipeline includes an annular cooling portion and at least one conveying pipeline. The annular cooling portion is connected to the conveying pipeline and contacts the shielding portion of the fixing ring.

10. The deposition device with a shield cooling device according to claim 1, characterized in that: The cooling fluid is an inert gas or a non-reactive gas.

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