Topological state frequency adjustment method, device and equipment, and computer readable storage medium

Abstract

The invention relates to a topological state frequency adjustment method and device, equipment and a computer readable storage medium, and relates to the technical field of engineering structures, and the method comprises the steps: taking a piezoelectric plate as a resonator, and generating a target unit structure through the piezoelectric plate and a unit structure of a target material; applying a periodic boundary condition to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure; generating a one-dimensional target system by using the target unit structure, and setting displacement excitation for the one-dimensional target system to obtain an excited topological state in the topological band gap; and applying a voltage to the one-dimensional target system, and adjusting the excitation frequency of the excited topological state based on the voltage. The excitation frequency of the topological state is controlled through the external voltage under the condition that the structure of the target material is kept unchanged, operation is simplified, and the flexibility of the system is improved.

Description

Background Art

[0002] In the related technologies, one-dimensional topological mechanical metamaterials have attracted extensive attention due to their simple structure, easy realization and analysis. By introducing topological properties into one-dimensional periodic beams, it is possible to achieve precise control of the localized behaviors of edge states and interface states in a lower dimension.

[0003] However, the fixed geometric configuration and the limitations of unit and material properties in traditional topological mechanical metamaterials make it difficult to flexibly respond to different operational requirements and changing working conditions. By introducing a tunable mechanism, precise control of the vibration energy of the required frequency can be achieved. In related technologies, common control methods usually achieve topological state regulation by changing the geometric structure of the material or adjusting specific design parameters, but the above methods are insufficient in response speed, energy efficiency and system stability.

[0004] Therefore, it is necessary to provide a new topological state frequency regulation method.

[0005] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present invention, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the invention

[0006] The present disclosure provides a topological state frequency adjustment method, a topological state frequency adjustment device, a topological state frequency adjustment equipment, and a computer-readable storage medium, thereby at least to a certain extent overcoming the problems of slow tunable topological state response speed, high energy consumption, and low system stability caused by the limitations and defects of related technologies.

[0007] According to one aspect of the present disclosure, a topological state frequency adjustment method is provided, comprising:

[0008] Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0009] Applying periodic boundary conditions to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure;

[0010] Generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain an excited topological state in the topological band gap;

[0011] A voltage is applied to the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on the voltage.

[0012] In an exemplary embodiment of the present disclosure, the method of using a piezoelectric sheet as a resonator and generating a target unit structure through a unit structure of the piezoelectric sheet and a target material includes:

[0013] A piezoelectric piece with a cylindrical mass is fixed as a resonator on a unit structure of the target material;

[0014] A unit structure consisting of the piezoelectric sheet, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

[0015] In an exemplary embodiment of the present disclosure, applying a periodic boundary condition to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure includes:

[0016] constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system;

[0017] Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

[0018] In an exemplary embodiment of the present disclosure, after obtaining the topological band gap in the energy band structure, the method further includes:

[0019] The modes in the band structure are obtained by screening in-plane and out-of-plane polarizations.

[0020] In an exemplary embodiment of the present disclosure, the step of generating a one-dimensional target system using the target unit structure, setting a displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap includes:

[0021] Generate the one-dimensional target system using the first target unit structure and the second target unit structure;

[0022] Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation;

[0023] The topological state excited in the topological band gap is obtained based on the transmission spectrum.

[0024] In an exemplary embodiment of the present disclosure, in the first target unit structure and the second target unit structure, the position of the resonator is equal to the position of the unit structure, but in opposite directions.

[0025] In an exemplary embodiment of the present disclosure, applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0026] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0027] According to one aspect of the present disclosure, a topological state frequency adjustment device is provided, comprising:

[0028] A target unit structure generation module, used to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0029] A topological band gap determination module, used for applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure;

[0030] A topological state excitation module, used to generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain a topological state excited in the topological band gap;

[0031] A frequency adjustment module is used to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

[0032] According to one aspect of the present disclosure, a topological state frequency adjustment device is provided, comprising: a memory and at least one processor, wherein instructions are stored in the memory, and the at least one processor calls the instructions in the memory so that the topological state frequency adjustment device implements the topological state frequency adjustment method described in any of the above exemplary embodiments when executed.

[0033] According to one aspect of the present disclosure, a computer-readable storage medium is provided, wherein instructions are stored in the computer-readable storage medium, and when the instructions are executed by a processor, the topological state frequency adjustment method described in any of the above exemplary embodiments is implemented.

[0034] The embodiment of the present disclosure provides a method for adjusting the frequency of a topological state, which uses a piezoelectric sheet as a resonator, generates a target unit structure through the unit structure of the piezoelectric sheet and the target material; applies periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; generates a one-dimensional target system using the target unit structure, sets displacement excitation to the one-dimensional target system, and obtains the topological state excited in the topological band gap; applies voltage to the one-dimensional target system, and adjusts the excitation frequency of the excited topological state based on the voltage. On the one hand, a one-dimensional target system is generated using the target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain the topological state excited in the topological band gap. After obtaining the excited state, a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage, which solves the problem of changing the geometric structure in the related art, and improves the response speed and energy efficiency of the frequency adjustment; on the other hand, the frequency of the topological state is quickly and accurately controlled by an external voltage while keeping the structure of the target material unchanged, which simplifies the operation and improves the flexibility of the system.

[0035] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present invention, and together with the specification are used to explain the principles of the present invention. Obviously, the accompanying drawings described below are only some embodiments of the present invention, and for those of ordinary skill in the art, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0037] Figure 1 A flowchart of a topological state frequency adjustment method according to an exemplary embodiment of the present disclosure is schematically shown.

[0038] Figure 2 (a) schematically shows a unit structure diagram of a target material according to an example embodiment of the present disclosure.

[0039] Figure 2 (b) is a schematic diagram schematically showing a piezoelectric sheet according to an example embodiment of the present disclosure.

[0040] Figure 2 (c) is a schematic diagram schematically showing a cylinder according to an exemplary embodiment of the present disclosure.

[0041] Figure 3 A flowchart of a method for using a piezoelectric sheet as a resonator and generating a target unit structure through a unit structure of a target material and the piezoelectric sheet is schematically shown according to an exemplary embodiment of the present disclosure.

[0042] Figure 4 A schematic diagram schematically illustrates a target unit structure according to an exemplary embodiment of the present disclosure.

[0043] Figure 5 A flowchart of a method for applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and a topological band gap in the band structure according to an exemplary embodiment of the present disclosure is schematically shown.

[0044] Figure 6 A schematic diagram schematically illustrates an energy band structure of a target unit structure according to an example embodiment of the present disclosure.

[0045] Figure 7 A trend diagram schematically illustrates the influence of voltage on the frequency range of a topological bandgap according to an exemplary embodiment of the present disclosure.

[0046] Figure 8 A flowchart of a method for generating a one-dimensional target system by using the target unit structure, setting a displacement excitation to the one-dimensional target system, and obtaining an excited topological state in the topological band gap according to an exemplary embodiment of the present disclosure is schematically shown.

[0047] Fig. 9 A schematic diagram schematically illustrates a first target unit structure and a second target unit structure according to an exemplary embodiment of the present disclosure.

[0048] Fig.10 A schematic diagram of a one-dimensional target system according to an exemplary embodiment of the present disclosure is schematically shown.

[0049] Fig.11 A schematic diagram schematically illustrates a transmission spectrum after setting unit displacement excitation according to an exemplary embodiment of the present disclosure.

[0050] Fig.12 A trend diagram of the influence of voltage on syntax frequency in a one-dimensional target system according to an exemplary embodiment of the present disclosure is schematically output.

[0051] Fig.13 A block diagram of a topological state frequency adjustment device according to an exemplary embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0052] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as being limited to the examples set forth herein; on the contrary, these embodiments are provided so that the present invention will be more comprehensive and complete, and the concept of the example embodiments will be fully conveyed to those skilled in the art. The described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present invention. However, those skilled in the art will appreciate that the technical solutions of the present invention may be practiced while omitting one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted. In other cases, known technical solutions are not shown or described in detail to avoid obscuring various aspects of the present invention.

[0053] In addition, the accompanying drawings are only schematic illustrations of the present invention and are not necessarily drawn to scale. The same reference numerals in the figures represent the same or similar parts, and their repeated description will be omitted. Some of the block diagrams shown in the accompanying drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities can be implemented in software form, or implemented in one or more hardware modules or integrated circuits, or implemented in different networks and / or processor devices and / or microcontroller devices.

[0054] Dynamic analysis of engineering structures is the basis of structural design, high reliability and safe operation, and is also an important research direction in the discipline of dynamics and control. Vibrations in structures are usually propagated in the structure in the form of elastic waves or in the form of coupling between elastic waves and surrounding acoustic media (such as air and water). The study of elastic wave regulation is one of the core basic issues of structural vibration control. In recent decades, metamaterials realized by carefully designed periodic structures have extraordinary dynamic properties such as negative refraction, energy collection, negative Poisson's ratio and elastic wave regulation, and have gradually become advanced solutions for controlling elastic waves and vibrations. In recent years, topological mechanical metamaterials can be realized by constructing symmetry breaking, phase difference or coupling strength changes in metamaterials. By designing topological mechanical metamaterials, not only can the elastic wave energy be localized at the boundary, but also a topological protection state can be formed at the boundary, so that the elastic wave can reduce the scattering caused by defects and disorder at the path during transmission, and can effectively avoid the diffusion and scattering loss of elastic waves. One-dimensional topological mechanical metamaterials have attracted widespread attention due to their simple structure, easy realization and analysis. By introducing topological properties into one-dimensional periodic beams, precise control of the localized behavior of edge states and interface states can be achieved in lower dimensions. Therefore, it is suitable for efficient energy transfer and waveguide applications in spatially confined application scenarios.

[0055] However, the fixed geometric configurations and unit and material properties of traditional topological metamaterials also bring limitations, making it difficult to flexibly respond to different operational requirements and changing working conditions. By introducing a tunable mechanism, topological metamaterials can dynamically adjust their topological state characteristics through the stimulation of the external environment, thereby achieving precise control of the vibration energy of the required frequency. Although a variety of methods have been proposed to achieve tunable topological states, such as thermal tuning and magnetic field tuning, these methods have shortcomings in response speed, energy efficiency and system stability. For example, thermal tuning has a slow response and high energy consumption, while magnetic field tuning may introduce electromagnetic interference and requires complex external equipment.

[0056] In summary, one-dimensional topological mechanical metamaterials based on tunable mechanisms can effectively meet multiple vibration control requirements, but traditional tunable mechanisms are not flexible and stable enough. Existing common control methods usually rely on changing the geometric structure of the material or adjusting specific design parameters to achieve topological state regulation.

[0057] Based on one or more of the above problems, this example implementation first provides a topological state frequency adjustment method, referring to Figure 1 As shown, the topological state frequency adjustment method may include the following steps:

[0058] Step S110. Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0059] Step S120. Applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure;

[0060] Step S130. Generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain an excited topological state in the topological band gap;

[0061] Step S140: Applying a voltage to the one-dimensional target system, and adjusting the excitation frequency of the excited topological state based on the voltage.

[0062] The above-mentioned method for adjusting the frequency of the topological state uses a piezoelectric sheet as a resonator, generates a target unit structure through the unit structure of the piezoelectric sheet and the target material; applies periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; generates a one-dimensional target system using the target unit structure, sets displacement excitation to the one-dimensional target system, and obtains the topological state excited in the topological band gap; applies voltage to the one-dimensional target system, and adjusts the excitation frequency of the excited topological state based on the voltage. On the one hand, a one-dimensional target system is generated using the target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain the topological state excited in the topological band gap. After the excited state is obtained, a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage, which solves the problem of changing the geometric structure in the related art and improves the response speed and energy efficiency of the frequency adjustment; on the other hand, the frequency of the topological state is quickly and accurately controlled by an external voltage while keeping the structure of the target material unchanged, which simplifies the operation and improves the flexibility of the system.

[0063] In the following, each step involved in the topological state frequency adjustment method according to the exemplary embodiment of the present disclosure is explained and illustrated in detail.

[0064] In step S110 , a piezoelectric sheet is used as a resonator, and a target unit structure is generated through a unit structure of the piezoelectric sheet and a target material.

[0065] In this example embodiment, the target material is a one-dimensional topological mechanical metamaterial, and the unit structure of the target material, that is, the unit structure of the one-dimensional topological mechanical metamaterial, is a perforated beam. A circular piezoelectric piece with a cylindrical mass can be fixed on the hole of the perforated beam as a resonator. The perforated beam has a length a=54 mm, a width b=34 mm, a height h=4 mm, and a hole radius R=13 mm on the beam; the piezoelectric piece has a thickness of 0.2 mm and a radius r m =15mm; radius r of the additional cylindrical mass s and height h s They are all 3mm and fixed on the piezoelectric piece. Figure 2 (a) shows the unit structure of the target material, Figure 2 (b) shows the piezoelectric sheet and Figure 2 (c) shows a cylinder. The material of the piezoelectric piece is PZT-5H, and the material of the cylinder is steel.

[0066] In this example embodiment, reference Figure 3 As shown, the piezoelectric sheet is used as a resonator, and a target unit structure is generated through the unit structure of the piezoelectric sheet and the target material, including:

[0067] Step S310. Fixing a piezoelectric piece with a cylindrical mass as a resonator on a unit structure of the target material;

[0068] Step S320. Determine the unit structure composed of the piezoelectric piece, the cylindrical mass and the unit structure of the target material as the target unit structure.

[0069] In the following, step S310 and step S320 are further explained and illustrated. Specifically, the piezoelectric sheet fixed on the target unit of the target material, that is, the hole of the perforated beam of the one-dimensional topological mechanical metamaterial and the cylinder fixed on the piezoelectric sheet are determined as resonators, and the unit structure composed of the resonator and the unit structure of the target material is determined as the target unit structure. Figure 4 The target unit structure of this exemplary embodiment is shown.

[0070] In step S120, a periodic boundary condition is applied to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure.

[0071] In this example embodiment, after the target unit structure is obtained by splicing, a periodic boundary condition can be applied to the target unit structure, wherein the periodic boundary condition is to infinitely splice the target unit structure; in solid physics, the band structure of a solid describes the energy that is forbidden or allowed to be carried by electrons, which is caused by the diffraction of quantum dynamics electron waves in a periodic lattice, and the band structure of the material determines the various properties of the material. The band structure of the target unit structure includes a local resonant band gap and a topological band gap. The local resonant band gap is formed based on the local resonance mechanism, and its frequency is determined by the natural resonant frequency of the photo system composed of the piezoelectric sheet and the cylinder. The topological band gap is also formed by the local resonance mechanism, and its frequency is also affected by the resonance system. Therefore, a voltage can be applied to the piezoelectric sheet to change the natural resonant frequency of the resonance system, thereby changing the frequency range of the topological band gap.

[0072] In this example embodiment, reference Figure 5 As shown, applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure includes:

[0073] Step S510. constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on the x-axis direction of the coordinate system;

[0074] Step S520. Scan the irreducible Brillouin zone boundary in the reciprocal space based on the wave vector to obtain the band structure of the target unit structure; wherein the band structure includes the topological band gap.

[0075] In the following, step S510 and step S520 will be further explained and illustrated. Specifically, a coordinate system is constructed based on the target unit structure, and a periodic boundary condition is applied to the target unit structure along the direction of the x-axis of the coordinate system, wherein the midpoint of the target unit structure can be used as the origin of the coordinate system when constructing the coordinate system, or the point in the lower left corner of the target unit structure can be used as the origin of the coordinate system, which is not specifically limited in this example embodiment. After applying the periodic boundary condition, the band structure of the target unit structure can be calculated based on the irreducible Brillouin zone boundary in the reciprocal space by scanning the wave vector. Figure 6 The band structure of the target unit structure is shown in Figure 6 The middle region 610 is a local resonant band gap, and the region 620 is a topological band gap. Figure 6 The points in are the modes obtained by screening.

[0076] Furthermore, after obtaining the topological band gap in the energy band structure, the method further comprises:

[0077] The modes in the band structure are obtained by screening in-plane and out-of-plane polarizations.

[0078] Specifically, after obtaining the band structure of the target unit structure, the topological band gap characteristics of the bending wave in the band structure can be obtained by using the in-plane and out-of-plane polarization screening method. The in-plane and out-of-plane polarization screening formula is:

[0079] p=∫(|w| 2 dV) / ∫(|u| 2 +|V| 2 +|w| 2 )dV

[0080] Where p is the polarization factor and (u, v, w) is the displacement field in the target unit structure. When p>0.9, the calculated mode can be considered to be an out-of-plane mode, that is, a bending wave mode.

[0081] In this exemplary embodiment, after the energy band structure of the target unit structure is obtained, there is no excited topological state in the topological band gap of the energy band structure, and the frequency of the topological band gap is affected by the resonance system, therefore, a voltage can be applied to the piezoelectric piece to change the natural resonance frequency of the resonance system, thereby changing the frequency range of the topological band gap. The direction of the voltage can be from the bottom surface to the top surface of the piezoelectric piece. Figure 7 The trend diagram of the influence of topological bandgap frequency range on voltage is based on Figure 7 It can be seen that within the voltage range of 0-100V, the topological band gap changes linearly with the voltage, and the frequency range of the topological band gap gradually moves toward high frequency as the voltage increases.

[0082] In step S130, a one-dimensional target system is generated by using the target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain an excited topological state in the topological band gap.

[0083] In this exemplary embodiment, in order to realize a topological state with concentrated energy at the boundary, it is necessary to combine multiple target unit structures to construct a one-dimensional system. Figure 8 As shown, the method of generating a one-dimensional target system by using the target unit structure, setting a displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap includes:

[0084] Step S810. Generate the one-dimensional target system using the first target unit structure and the second target unit structure;

[0085] Step S820. Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location;

[0086] Step S830: Obtain the topological state excited in the topological band gap based on the transmission spectrum.

[0087] Below, step S810-step S830 will be further explained and illustrated. Specifically, a one-dimensional target system is generated using a first target unit structure and a second target unit structure, wherein the number of the first target unit structure is the same as the number of the second target unit structure, and the number can be 10 or 15. In this example embodiment, the number of the first target unit structure and the second target unit structure is not specifically limited. The position of the resonator in the first target unit structure and the second target unit structure is equal to the distance between the center line of the target unit structure and the opposite direction, wherein the displacement between the resonator and the center line of the target unit structure can be 0, which is not specifically limited in this example embodiment. Fig. 9 The first target unit structure and the second target unit structure are shown, and the generated one-dimensional target system reference Fig.10 As shown, in Fig.10 1010 is the measurement point at the interface. After forming a one-dimensional target system with an interface, in order to stimulate the topological state at the interface, a unit displacement excitation can be set in the one-dimensional target system. The unit displacement excitation can be set at the leftmost end of the one-dimensional target system. Based on the unit displacement excitation, a fixed unit displacement can be generated. Therefore, the fixed unit displacement w at the excitation point and the displacement response w at the measurement interface can be used. i , and the transmission rate is

[0088]

[0089] After obtaining the transmission rate, we can get Fig.11 The transmission spectrum shown in Figure 1. In the transmission spectrum, the peak value represented by the point within the topological band gap frequency range is the excited topological state, and the frequency corresponding to the peak point is the frequency when the interface state is excited.

[0090] In step S140, a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage.

[0091] In this exemplary embodiment, after obtaining the topological state excited in the topological band gap, a voltage may be applied to adjust the frequency of the topological state excited in the topological band gap. The step of applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0092] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0093] Specifically, a voltage can be applied to each piezoelectric piece in the one-dimensional target system, and the voltage variation range is 0-100V. By applying voltage to the upper and lower surfaces of the piezoelectric piece, the equivalent bending stiffness of the one-dimensional periodic perforated beam is affected, thereby affecting the excitation frequency of the topological state. Fig.12 The trend graph of the influence of voltage on the excitation frequency in a one-dimensional target system shows that when the voltage value is in the range of 0-100V, the excitation frequency of the topological state increases with the increase of voltage, and the trend is linear.

[0094] The topological state frequency adjustment method provided in the exemplary embodiments of the present disclosure has at least the following advantages: on the one hand, a one-dimensional target system is generated by utilizing a target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain an excited topological state in a topological band gap; after obtaining the excited state, a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage, thereby solving the problem of needing to change the geometric structure in related technologies and improving the response speed and energy efficiency of frequency adjustment; on the other hand, while keeping the target material structure unchanged, the frequency of the topological state is quickly and accurately controlled by an external voltage, thereby simplifying the operation and improving the flexibility of the system.

[0095] The exemplary embodiment of the present disclosure also provides a topological state frequency adjustment device, referring to Fig.13 As shown, it may include: a target unit structure generation module 1310, a topological band gap determination module 1320, a topological state excitation module 1330 and a frequency adjustment module 1340. Among them:

[0096] A target unit structure generation module 1310 is used to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0097] A topological band gap determination module 1320 is used to apply periodic boundary conditions to the target unit structure to obtain the energy band structure of the unit structure and the topological band gap in the energy band structure;

[0098] A topological state excitation module 1330 is used to generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain a topological state excited in the topological band gap;

[0099] The frequency adjustment module 1340 is used to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

[0100] The specific details of each module in the above-mentioned topological state frequency adjustment device have been described in detail in the corresponding topological state frequency adjustment method, so they will not be repeated here.

[0101] In an exemplary embodiment of the present disclosure, the method of using a piezoelectric sheet as a resonator and generating a target unit structure through a unit structure of the piezoelectric sheet and a target material includes:

[0102] A piezoelectric piece with a cylindrical mass is fixed as a resonator on a unit structure of the target material;

[0103] A unit structure consisting of the piezoelectric sheet, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

[0104] In an exemplary embodiment of the present disclosure, applying a periodic boundary condition to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure includes:

[0105] constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system;

[0106] Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

[0107] In an exemplary embodiment of the present disclosure, after obtaining the topological band gap in the energy band structure, the method further includes:

[0108] The modes in the band structure are obtained by screening in-plane and out-of-plane polarizations.

[0109] In an exemplary embodiment of the present disclosure, the step of generating a one-dimensional target system using the target unit structure, setting a displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap includes:

[0110] Generate the one-dimensional target system using the first target unit structure and the second target unit structure;

[0111] Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation;

[0112] The topological state excited in the topological band gap is obtained based on the transmission spectrum.

[0113] In an exemplary embodiment of the present disclosure, in the first target unit structure and the second target unit structure, the position of the resonator is equal to the position of the unit structure, but in opposite directions.

[0114] In an exemplary embodiment of the present disclosure, applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0115] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0116] It should be noted that, although several modules or units of the equipment for action execution are mentioned in the above detailed description, this division is not mandatory. In fact, according to an embodiment of the present invention, the features and functions of two or more modules or units described above can be embodied in one module or unit. On the contrary, the features and functions of one module or unit described above can be further divided into being embodied by multiple modules or units.

[0117] In addition, although the steps of the method of the present invention are described in a specific order in the drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps, etc.

[0118] It will be appreciated by those skilled in the art that various aspects of the present invention may be implemented as a system, method or program product. Therefore, various aspects of the present invention may be specifically implemented in the following forms, namely: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or a combination of hardware and software, which may be collectively referred to herein as a "circuit", "module" or "system".

[0119] In an exemplary embodiment of the present invention, a topological state frequency adjustment device is further provided, the topological state frequency adjustment device comprising a memory and at least one processor, the memory storing instructions, the at least one processor calling the instructions in the memory so that the topological state frequency adjustment device performs any of the topological state frequency adjustment methods described above,

[0120] In an exemplary embodiment of the present invention, a computer-readable storage medium is also provided, on which a program product capable of implementing the above method of this specification is stored. In some possible implementations, various aspects of the present invention can also be implemented in the form of a program product, which includes a program code, and when the program product is run on a terminal device, the program code is used to enable the terminal device to perform the steps according to various exemplary embodiments of the present invention described in the above "Exemplary Method" section of this specification.

[0121] The program product for implementing the above method according to an embodiment of the present invention may adopt a portable compact disk read-only memory (CD-ROM) and include program code, and may be run on a terminal device, such as a personal computer. However, the program product of the present invention is not limited thereto, and in this document, a readable storage medium may be any tangible medium containing or storing a program, which may be used by or in combination with an instruction execution system, apparatus, or device.

[0122] The program product may use any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples (non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above.

[0123] Computer readable signal media may include data signals propagated in baseband or as part of a carrier wave, in which readable program code is carried. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Readable signal media may also be any readable medium other than a readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0124] The program code contained on the readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wired, optical cable, RF (Radio Frequency), etc., or any suitable combination of the above.

[0125] Program code for performing the operations of the present invention may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, etc., and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a separate software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving a remote computing device, the remote computing device may be connected to the user computing device through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., through the Internet using an Internet service provider).

[0126] In addition, the above-mentioned figures are only schematic illustrations of the processes included in the method according to an exemplary embodiment of the present invention, and are not intended to be limiting. It is easy to understand that the processes shown in the above-mentioned figures do not indicate or limit the time sequence of these processes. In addition, it is also easy to understand that these processes can be performed synchronously or asynchronously, for example, in multiple modules.

[0127] Other embodiments of the invention will readily occur to those skilled in the art after considering the specification and practicing the invention invented herein. This application is intended to cover any variations, uses or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art that are not invented by the present invention. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the claims.

Claims

1. A topological state frequency adjustment method, characterized in that: include: Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material; Applying periodic boundary conditions to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure; Generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain an excited topological state in the topological band gap; A voltage is applied to the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on the voltage.

2. The topological state frequency adjustment method according to claim 1, characterized in that: The method of using the piezoelectric sheet as a resonator and generating a target unit structure through the unit structure of the piezoelectric sheet and the target material includes: A piezoelectric piece with a cylindrical mass is fixed as a resonator on a unit structure of the target material; A unit structure consisting of the piezoelectric sheet, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

3. The topological state frequency adjustment method according to claim 1, characterized in that: The step of applying a periodic boundary condition to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure includes: constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system; Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

4. The topological state frequency adjustment method according to claim 3, characterized in that: After obtaining the topological band gap in the energy band structure, the method further comprises: The modes in the band structure are obtained by screening in-plane and out-of-plane polarizations.

5. The topological state frequency adjustment method according to claim 1, characterized in that: The step of generating a one-dimensional target system by using the target unit structure, and setting a displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap comprises: Generate the one-dimensional target system using the first target unit structure and the second target unit structure; Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location; The topological state excited in the topological band gap is obtained based on the transmission spectrum.

6. The topological state frequency adjustment method according to claim 5, characterized in that: In the first target unit structure and the second target unit structure, the position of the resonator is equal to the position of the unit structure, but in opposite directions.

7. The topological state frequency adjustment method according to claim 1, characterized in that: The step of applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage comprises: A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

8. A topological state frequency adjustment device, characterized in that: include: A target unit structure generation module, used to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material; A topological band gap determination module, used for applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; A topological state excitation module, used to generate a one-dimensional target system using the target unit structure, set a displacement excitation to the one-dimensional target system, and obtain a topological state excited in the topological band gap; A frequency adjustment module is used to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

9. A topological state frequency adjustment device, characterized in that: The topological state frequency adjustment device includes: a memory and at least one processor, wherein instructions are stored in the memory, and the at least one processor calls the instructions in the memory so that the topological state frequency adjustment device executes the topological state frequency adjustment method as described in any one of claims 1-7.

10. A computer-readable storage medium, wherein instructions are stored in the computer-readable storage medium, characterized in that: When the instructions are executed by the processor, the topological state frequency adjustment method according to any one of claims 1 to 7 is implemented.

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