Furnace tube and method of use thereof

Abstract

A furnace tube and its using method, the furnace tube comprises: a chamber for processing wafer; normal pressure air inlet device and low pressure air inlet device for supplying air to the chamber, the normal pressure air inlet device and the low pressure air inlet device are respectively independently connected with the chamber; normal pressure pressure control device and low pressure pressure control device for controlling air pressure in the chamber, the normal pressure pressure control device and the low pressure pressure control device respectively independently control air pressure in the chamber; normal pressure air jet pipe connected with the normal pressure air inlet device inside the chamber, and low pressure air jet pipe connected with the low pressure air inlet device inside the chamber. The application realizes the compatibility of normal pressure process treatment and low pressure process treatment through a furnace tube.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a furnace tube and a method for using the same. BACKGROUND

[0002] In the manufacturing process of semiconductor chips, a furnace tube is an indispensable device, which can be used in deposition, diffusion, oxidation and annealing processes performed on a wafer.

[0003] In the related art, a furnace tube can only realize normal pressure control or low pressure control independently, that is, only a normal pressure furnace tube or a low pressure furnace tube.

[0004] In view of the above technical problems, the present application provides a new furnace tube and a method for using the same to at least partially solve the above problems. SUMMARY

[0005] A series of simplified concepts are introduced in the summary section, which will be further described in detail in the detailed description section. The summary section of the present application does not mean to attempt to limit the key features and essential technical features of the claimed technical solution, nor to determine the protection scope of the claimed technical solution.

[0006] In view of the above technical problems, the present application provides a new furnace tube and a method for using the same to at least partially solve the above problems.

[0007] a chamber for processing a wafer;

[0008] a normal pressure gas inlet device and a low pressure gas inlet device for supplying gas to the chamber, the normal pressure gas inlet device and the low pressure gas inlet device being respectively independently connected to the chamber;

[0009] a normal pressure pressure control device and a low pressure pressure control device for controlling the gas pressure in the chamber, the normal pressure pressure control device and the low pressure pressure control device being respectively independently connected to the chamber;

[0010] a normal pressure gas jet pipe connected to the normal pressure gas inlet device inside the chamber, and a low pressure gas jet pipe connected to the low pressure gas inlet device inside the chamber.

[0011] In some embodiments of the present application, the chamber comprises a gas inlet end and a gas outlet end;

[0012] the normal pressure gas inlet device is connected to the normal pressure gas jet pipe through the gas inlet end, and the low pressure gas inlet device is connected to the low pressure gas jet pipe through the gas inlet end;

[0013] the normal pressure pressure control device and the low pressure pressure control device are respectively connected to the gas outlet end.

[0014] In some embodiments of the present application, the low-pressure pressure control device comprises:

[0015] a first main exhaust pipe, a first branch exhaust pipe, a second branch exhaust pipe and a second main exhaust pipe are provided for gas passage, the gas inlet end of the first main exhaust pipe is connected to the gas outlet end; the gas inlet ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the gas outlet end of the first main exhaust pipe, and the gas outlet ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the gas inlet end of the second main exhaust pipe;

[0016] a main valve for controlling the internal gas pressure of the chamber when the chamber is in a process state, the main valve being arranged on the first branch exhaust pipe;

[0017] a bypass pneumatic valve for controlling the internal pressure of the chamber when the chamber is in a non-process state, the bypass pneumatic valve being arranged on the second branch exhaust pipe;

[0018] a gas suction pump for sucking the gas inside the chamber, one end of the gas suction pump being connected to the gas outlet end of the second main exhaust pipe, and the other end being connected to a tail gas treatment device.

[0019] In some embodiments of the present application, the normal-pressure pressure control device comprises:

[0020] a third main exhaust pipe, a mixed exhaust pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe and a fourth branch exhaust pipe; the gas outlet end of the third main exhaust pipe is connected to one end of a condenser, the other end of the condenser is connected to the inlet of the mixed exhaust pipe, the outlet of the mixed exhaust pipe is connected to the inlet of the drain pipe and the gas inlet ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe and the fourth branch exhaust pipe, and the gas outlet ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe and the fourth branch exhaust pipe are respectively connected to a tail gas treatment device;

[0021] a water tank and a pneumatic valve are arranged on the drain pipe; a pneumatic valve and an absolute pressure control valve are arranged on the first branch exhaust pipe; a pneumatic valve and a relative pressure control valve are arranged on the second branch exhaust pipe; an automatic valve and a one-way valve are arranged on the third branch exhaust pipe; and a pneumatic valve is arranged on the fourth branch exhaust pipe;

[0022] the relative pressure control valve is used for controlling the internal gas pressure of the chamber when the temperature inside the chamber is higher than a first set temperature;

[0023] the absolute pressure control valve is used for controlling the internal gas pressure of the chamber when the temperature inside the chamber is less than or equal to the first set temperature.

[0024] In some embodiments of the present application, the atmospheric pressure gas injection pipe comprises a main body part extending along the height direction of the chamber and a connecting part connected with the atmospheric pressure gas inlet device, a plurality of nozzles are uniformly arranged on the main body part, the gas inlet end is located at the bottom of the chamber, the size of the nozzles changes with the distance between the nozzles and the gas inlet end, and the size of the nozzles farther from the gas inlet end is larger; the height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber.

[0025] In some embodiments of the present application, the low-pressure gas injection pipe is in the shape of "L", one end of the low-pressure gas injection pipe is connected with the low-pressure gas inlet device, the other end of the low-pressure gas injection pipe is the gas outlet, and the low-pressure gas injection pipe extends upward along the height direction of the chamber; the height of the low-pressure gas injection pipe is lower than the height of the lowermost wafer in the chamber.

[0026] In some embodiments of the present application, the atmospheric pressure gas inlet device comprises:

[0027] a first nitrogen gas supply pipe, an oxygen gas supply pipe, a hydrogen gas supply pipe, a first mixed gas supply pipe, a second mixed gas supply pipe and a third mixed gas supply pipe;

[0028] The gas outlet end of the first nitrogen gas supply pipe is connected with the gas inlet end of a first nitrogen gas branch supply pipe and a second nitrogen gas branch supply pipe respectively, the gas outlet end of the first nitrogen gas branch supply pipe and the oxygen gas supply pipe is connected with the gas inlet end of the first mixed gas supply pipe respectively, the gas outlet end of the second nitrogen gas branch supply pipe and the hydrogen gas supply pipe is connected with the gas inlet end of the second mixed gas supply pipe respectively, the gas outlet end of the first mixed gas supply pipe and the second mixed gas supply pipe is connected with the gas inlet end of the third mixed gas supply pipe respectively, and the gas outlet end of the third mixed gas supply pipe is connected with the gas inlet end of the atmospheric pressure gas injection pipe;

[0029] A filter, a hand valve, a pressure regulating valve and a pressure sensor are sequentially arranged on the first nitrogen gas supply pipe, the oxygen gas supply pipe and the hydrogen gas supply pipe respectively, a pneumatic valve is further arranged on the hydrogen gas supply pipe after the pressure sensor, and a pneumatic valve is arranged on the first nitrogen gas branch supply pipe and the second nitrogen gas branch supply pipe respectively;

[0030] A gas mass flow controller and a pneumatic valve are arranged on the first mixed gas supply pipe and the second mixed gas supply pipe respectively, and an igniter is arranged on the third mixed gas supply pipe.

[0031] In some embodiments of the present application, the low-pressure gas inlet device comprises:

[0032] a second nitrogen gas supply pipe, a fluorine gas supply pipe, a special gas supply pipe, a fourth mixed gas supply pipe, a fifth mixed gas supply pipe, a sixth mixed gas supply pipe, a first mixed branch gas supply pipe, a second mixed branch gas supply pipe, a third mixed branch gas supply pipe, and a fourth mixed branch gas supply pipe;

[0033] The exhaust end of the second nitrogen gas supply pipe is connected to the intake end of a third nitrogen branch gas supply pipe and a fourth nitrogen branch gas supply pipe, the exhaust end of the third nitrogen branch gas supply pipe and the fluorine gas supply pipe is connected to the intake end of the fourth mixed gas supply pipe, the exhaust end of the fourth nitrogen branch gas supply pipe and the special gas supply pipe is connected to the intake end of the fifth mixed gas supply pipe, the exhaust end of the fourth mixed gas supply pipe is connected to the intake end of the first mixed branch gas supply pipe and the second mixed branch gas supply pipe, the exhaust end of the fifth mixed gas supply pipe is connected to the intake end of the third mixed branch gas supply pipe and the fourth mixed branch gas supply pipe, the exhaust end of the first mixed branch gas supply pipe and the third mixed branch gas supply pipe is connected to the intake end of the sixth mixed gas supply pipe, the exhaust end of the sixth mixed gas supply pipe is connected to the intake end of the low-pressure gas injection pipe, and the exhaust end of the second mixed branch gas supply pipe and the fourth mixed branch gas supply pipe is connected to the second main exhaust pipe.

[0034] A filter, a hand valve, a pressure regulating valve, and a pressure sensor are sequentially arranged on the second nitrogen gas supply pipe; a filter, a hand valve, a filter, a pressure sensor, and a pneumatic valve are sequentially arranged on the fluorine gas supply pipe; a filter, a hand valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve are sequentially arranged on the special gas supply pipe; the third nitrogen branch gas supply pipe, the fourth nitrogen branch gas supply pipe, the first mixed branch gas supply pipe, the second mixed branch gas supply pipe, the third mixed branch gas supply pipe, and the fourth mixed branch gas supply pipe are respectively provided with a pneumatic valve; and the fourth mixed gas supply pipe and the fifth mixed gas supply pipe are respectively provided with a gas mass flow controller.

[0035] In some embodiments of the present application, the tail gas treatment device comprises at least two tail gas treatment chambers, and in the case of failure of one of the tail gas treatment chambers, the other tail gas treatment chamber can be switched to.

[0036] According to another aspect of the present application, a use method of the furnace tube is provided, comprising the following steps:

[0037] The normal-pressure gas injection device and the normal-pressure pressure control device are kept enabled, and the low-pressure gas injection device and the low-pressure pressure control device are kept disabled, so that the wafer is processed in the chamber under normal pressure.

[0038] In some embodiments of the present application, the step of switching the working environment in the chamber from a low-pressure environment to a normal-pressure environment is as follows:

[0039] controlling the low-pressure gas supply device to introduce a mixed gas of fluorine gas and nitrogen gas into the chamber to completely remove the film layer formed on the inner wall of the chamber;

[0040] turning off the low-pressure gas supply device and the low-pressure pressure control device, and turning on the normal-pressure gas inlet device to introduce nitrogen gas to change the low-pressure environment in the chamber into a normal-pressure state;

[0041] turning on the normal-pressure pressure control device.

[0042] According to another aspect of the present application, a method for using the furnace tube is provided. The low-pressure gas supply device and the low-pressure pressure control device are kept on, and the normal-pressure gas inlet device and the normal-pressure pressure control device are kept off, so that the wafer is processed in the low-pressure environment in the chamber.

[0043] According to the furnace tube and the method for using the same, the normal-pressure process can be performed on the wafer by the normal-pressure gas inlet device and the normal-pressure pressure control device, and the low-pressure process can be performed on the wafer by the low-pressure gas supply device and the low-pressure pressure control device, so that the compatibility of the normal-pressure process and the low-pressure process can be realized by one furnace tube. BRIEF DESCRIPTION OF DRAWINGS

[0044] The following drawings are included herewith in the present application to facilitate understanding of the present application. The drawings illustrate embodiments of the present application and, together with the description, serve to explain the principles of the present application.

[0045] Figure 1 FIG. 1 shows a structural schematic diagram of a furnace tube according to an embodiment of the present application.

[0046] Figure 2 FIG. 2 shows a partial structural schematic diagram of the furnace tube according to an embodiment of the present application.

[0047] Figure 3 FIG. 3 shows a structural schematic diagram of a normal-pressure pressure control device according to an embodiment of the present application.

[0048] Figure 4 FIG. 4 shows a structural schematic diagram of a low-pressure pressure control device according to an embodiment of the present application.

[0049] Figure 5 FIG. 5 shows a structural schematic diagram of a tail gas treatment device according to an embodiment of the present application.

[0050] Figure 6 FIG. 6 shows a structural schematic diagram of a normal-pressure gas inlet device according to an embodiment of the present application.

[0051] Figure 7 A schematic diagram of a low pressure intake device is shown.

[0052] Figure 8 A schematic diagram of a chamber and its internal arrangement of a normal pressure jet pipe and a low pressure jet pipe is shown.

[0053] Figure 9 A schematic diagram of a normal pressure jet pipe is shown.

[0054] Figure 10 A schematic diagram of a low pressure jet pipe is shown. DETAILED DESCRIPTION

[0055] In the following description, numerous specific details are set forth to provide a more thorough understanding of the present application. However, it will be apparent to one of skill in the art that the present application can be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application.

[0056] It should be understood that the present application can be carried out in various ways and that the application should not be interpreted as limited to the embodiments presented herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the application to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions can be exaggerated for clarity. Like numbers refer to like elements throughout.

[0057] It will be understood that when an element or layer is referred to as being "on" or "adjacent" another element or layer, it can be directly on the other element or layer or intervening elements or layers can also be present. In contrast, when an element is referred to as being "directly on" or "directly adjacent" another element or layer, there are no intervening elements or layers present. It will also be understood that, when an element is referred to as being "connected" or "coupled" to another element or layer, it can be directly connected or coupled to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.

[0058] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is inverted, then a dependent element or feature it is described as "below" or "beneath" or "under" another element or feature might be oriented "above" or "over" the other element or feature. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0059] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0060] In the related art, the furnace tube can only realize normal pressure control or low pressure control independently, that is, only normal pressure furnace tube or low pressure furnace tube.

[0061] To solve at least one of the above technical problems, the present application provides a furnace tube, comprising: a chamber for processing a wafer; a normal pressure gas inlet device and a low pressure gas inlet device for supplying gas to the chamber, the normal pressure gas inlet device and the low pressure gas inlet device being respectively independently connected with the chamber; a normal pressure pressure control device and a low pressure pressure control device for controlling the gas pressure in the chamber, the normal pressure pressure control device and the low pressure pressure control device being respectively independently used to control the gas pressure in the chamber; a normal pressure gas jet pipe connected with the normal pressure gas inlet device and located inside the chamber; and a low pressure gas jet pipe connected with the low pressure gas inlet device and located inside the chamber.

[0062] According to the furnace tube of the present application, by arranging the normal pressure gas inlet device for supplying gas to the chamber and the normal pressure pressure control device for controlling the gas pressure in the chamber, the wafer can be processed by normal pressure process, by arranging the low pressure gas inlet device for supplying gas to the chamber and the low pressure pressure control device for controlling the gas pressure in the chamber, the wafer can be processed by low pressure process, so that the compatibility of normal pressure process and low pressure process is realized by one furnace tube.

[0063] For a thorough understanding of the application, reference will be made to the following detailed description, in conjunction with the accompanying drawings, in which:

[0064] Reference will now be made to the following description of the preferred embodiments of the present application, taken in conjunction with the accompanying drawings, in which: Figures 1-10 A furnace tube according to embodiments of the present application is described. The furnace tube comprises a chamber 110 for processing a wafer; a normal pressure gas inlet device 120 and a low pressure gas inlet device 130 for supplying gas to the chamber 110, the normal pressure gas inlet device 120 and the low pressure gas inlet device 130 being respectively and independently connected to the chamber 110; a normal pressure pressure control device 170 and a low pressure pressure control device 180 for controlling the gas pressure in the chamber 110, the normal pressure pressure control device 170 and the low pressure pressure control device 180 being respectively and independently for controlling the gas pressure in the chamber 110; a normal pressure gas jet pipe 140 inside the chamber 110 connected to the normal pressure gas inlet device 120, and a low pressure gas jet pipe 150 inside the chamber 110 connected to the low pressure gas inlet device 130.

[0065] In actual operation, the furnace tube of the present embodiment can control the normal pressure gas inlet device 120 and the normal pressure pressure control device 170 to be in an enabled state, and the low pressure gas inlet device 130 and the low pressure pressure control device 180 to be in a disabled state, so that the gas pressure in the chamber 110 can be controlled by the normal pressure pressure control device 170 to be in a normal pressure state, and the chamber 110 can be supplied with gas by the normal pressure gas inlet device 120 through the normal pressure gas jet pipe 140, so that the wafer in the furnace tube can be processed by a normal pressure process. Alternatively, the low pressure gas inlet device 130 and the low pressure pressure control device 180 can be controlled to be in an enabled state, and the normal pressure gas inlet device 120 and the normal pressure pressure control device 170 to be in a disabled state, so that the gas pressure in the chamber 110 can be controlled by the low pressure pressure control device 180 to be in a low pressure state, and the chamber 110 can be supplied with gas by the low pressure gas inlet device 130 through the low pressure gas jet pipe 150, so that the wafer in the furnace tube can be processed by a low pressure process.

[0066] Thus, the furnace tube of the present embodiment can process a wafer by a normal pressure process and by a low pressure process, and the compatibility of the normal pressure process and the low pressure process is achieved by one furnace tube.

[0067] In some embodiments, the chamber 110 comprises a gas inlet end and a gas outlet end; the normal pressure gas inlet device 120 is connected to the normal pressure gas jet pipe 140 through the gas inlet end, and the low pressure gas inlet device 130 is connected to the low pressure gas jet pipe 150 through the gas inlet end; the normal pressure pressure control device 170 and the low pressure pressure control device 180 are respectively connected to the gas outlet end.

[0068] In some embodiments, the chamber 110 comprises a gas inlet end and a gas outlet end; the normal pressure gas inlet device 120 is connected to the normal pressure gas jet pipe 140 through the gas inlet end, and the low pressure gas inlet device 130 is connected to the low pressure gas jet pipe 150 through the gas inlet end; the normal pressure pressure control device 170 and the low pressure pressure control device 180 are respectively connected to the gas outlet end. Figure 2As shown, a total exhaust pipe 160 is arranged at the outlet end of the chamber 110, and a normal pressure control device 170 and a low pressure control device are respectively connected to different parts of the total exhaust pipe 160 to control the chamber 110 to be in a normal pressure state or a low pressure state.

[0069] In some embodiments, as shown, Figure 3 As shown, the normal pressure control device 170 comprises a third main exhaust pipe 1701, a mixed exhaust pipe 1703, a drainage pipe 1705, a first branch exhaust pipe 1706, a second branch exhaust pipe 1709, a third branch exhaust pipe 1712, and a fourth branch exhaust pipe 1715. The exhaust end of the third main exhaust pipe 1701 is connected to one end of a condenser 1702, the other end of the condenser 1702 is connected to the inlet of the mixed exhaust pipe 1703, the outlet of the mixed exhaust pipe 1703 is connected to the inlet of the drainage pipe 1705 and the air inlet ends of the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712, and the fourth branch exhaust pipe 1715, respectively. The exhaust ends of the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712, and the fourth branch exhaust pipe 1715 are connected to the tail gas treatment device 190. The drainage pipe 1705 is provided with a water tank 1704 and an air valve 1717. The first branch exhaust pipe 1706 is provided with an air valve 1707 and an absolute pressure control valve 1708. The second branch exhaust pipe 1709 is provided with an air valve 1710 and a relative pressure control valve 1711. The third branch exhaust pipe 1712 is provided with an automatic valve 1713 and a one-way valve 1714. The fourth branch exhaust pipe 1715 is provided with an air valve 1716. The relative pressure control valve 1711 is used to control the air pressure in the chamber 110 when the temperature in the chamber 110 is higher than a first set temperature. The absolute pressure control valve 1708 is used to control the air pressure in the chamber 110 when the temperature in the chamber 110 is less than or equal to the first set temperature.

[0070] Specifically, when the chamber 110 needs to be controlled at normal pressure, it can be determined whether the relative pressure control valve 1711 or the absolute pressure control valve 1708 is used to control the pressure in the chamber 110 to be at normal pressure according to whether the temperature in the chamber 110 is higher than the first set temperature. For example, when the temperature in the chamber 110 is higher than the first set temperature, the first branch exhaust pipe 1706 can be controlled to be in a closed state and the second branch exhaust pipe 1709 can be controlled to be in an open state (by controlling the pneumatic valve 1707 and the absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to be in a closed state, and the pneumatic valve 1710 and the relative pressure control valve 1711 on the second branch exhaust pipe 1709 to be in an open state), at this time, the gas in the chamber 110 can enter the third main exhaust pipe 1701 through the total exhaust pipe 160, and be cooled (for example, the water vapor generated by the process can be condensed) when passing through the condenser 1702. The liquid components generated after cooling enter the water tank 1704 in the drain pipe 1705 through the mixed exhaust pipe 1703, and can be discharged to the outside by opening the pneumatic valve 1717 after being stored to a certain extent. The condensed gas enters the second branch exhaust pipe 1709 through the mixed exhaust pipe 1703, and enters the tail gas treatment device 190 through the second branch exhaust pipe 1709, so as to ensure that the pressure in the chamber 110 is at normal pressure; when the temperature in the chamber 110 is less than or equal to the first set temperature, the second branch exhaust pipe 1709 can be controlled to be in a closed state and the first branch exhaust pipe 1706 can be controlled to be in an open state (by controlling the pneumatic valve 1707 and the absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to be in an open state, and the pneumatic valve 1710 and the relative pressure control valve 1711 on the second branch exhaust pipe 1709 to be in a closed state), the absolute pressure control valve 1708 can generate a certain suction force by using the principle of siphon, so as to extract the gas in the chamber 110. By controlling the opening angle of the pneumatic valve 1707 provided on the first branch exhaust pipe 1706, the pressure in the chamber 110 can be controlled, so that the gas in the chamber 110 can enter the third main exhaust pipe 1701 through the total exhaust pipe 160, and be cooled (for example, the water vapor generated by the process can be condensed) when passing through the condenser 1702. The liquid components generated after cooling enter the water tank 1704 in the drain pipe 1705 through the mixed exhaust pipe 1703, and can be discharged to the outside by opening the pneumatic valve 1717 after being stored to a certain extent. The condensed gas enters the first branch exhaust pipe 1706 through the mixed exhaust pipe 1703, and enters the tail gas treatment device 190 through the first branch exhaust pipe 1706, so as to ensure that the pressure in the chamber 110 is at normal pressure.

[0071] When the pressure inside chamber 110 is too high, the automatic valve 1713 installed on the third branch exhaust pipe 1712 will automatically open, and the automatic valve 1713 and the one-way valve 1714 installed on the third branch exhaust pipe 1712 will release pressure in chamber 110 to reduce the pressure inside chamber 110.

[0072] When the wafer does not need to be processed in the chamber 110, the pneumatic valve 1716 on the fourth branch exhaust pipe 1715 can be opened to discharge the gas in the chamber 110 through the fourth branch exhaust pipe 1715. The discharged gas can enter the exhaust gas treatment device 190.

[0073] Figure 1 The GN2 introduced into the absolute pressure control valve 1708 or the relative pressure control valve 1711 refers to industrial-grade pure nitrogen (General Nitrogen).

[0074] In some embodiments, the first set temperature can be set according to actual conditions. For example, the first set temperature can be 1100℃ or any other suitable temperature, and there is no limitation thereto.

[0075] In some embodiments, such as Figure 6 As shown, the atmospheric pressure intake device 120 includes: a first nitrogen supply pipe 1201, an oxygen supply pipe 1202, a hydrogen supply pipe 1203, a first mixing supply pipe 1206, a second mixing supply pipe 1207, and a third mixing supply pipe 1208; the exhaust end of the first nitrogen supply pipe 1201 is connected to the intake ends of the first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205, respectively; the exhaust ends of the first nitrogen branch supply pipe 1204 and the oxygen supply pipe 1202 are connected to the intake ends of the first mixing supply pipe 1206, respectively; the exhaust ends of the second nitrogen branch supply pipe 1205 and the hydrogen supply pipe 1203 are connected to the intake ends of the second mixing supply pipe 1207, respectively; the first mixing supply pipe 1206 and the second mixing supply pipe 1208... The exhaust end of 207 is connected to the inlet end of the third mixing gas supply pipe 1208, and the exhaust end of the third mixing gas supply pipe 1208 is connected to the inlet end of the atmospheric pressure jet pipe 140. The first nitrogen supply pipe 1201, oxygen supply pipe 1202, and hydrogen supply pipe 1203 are each sequentially equipped with a filter, a manual valve, a pressure regulating valve, and a pressure sensor. The hydrogen supply pipe 1203 is also equipped with a pneumatic valve located after the pressure sensor. The first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205 are each equipped with a pneumatic valve. The first mixing gas supply pipe 1206 and the second mixing gas supply pipe 1207 are each equipped with a gas mass flow controller and a pneumatic valve. The third mixing gas supply pipe 1208 is equipped with an igniter 1209 (the igniter 1209 can be...). Figure 6 (Middle Torch component).

[0076] Specifically, the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can be connected with a nitrogen gas source, an oxygen gas source and a hydrogen gas source respectively. When the gas pressure in the chamber 110 is controlled by the normal pressure pressure control device 170 to be in a normal pressure state, nitrogen gas, oxygen gas and hydrogen gas can be supplied into the chamber 110 through the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 respectively. Part of the nitrogen gas supplied by the first nitrogen gas supply pipe 1201 can enter the first mixed gas supply pipe 1206 through the first nitrogen gas branch supply pipe 1204, and the oxygen gas supplied by the oxygen gas supply pipe 1202 can enter the first mixed gas supply pipe 1206, and the nitrogen gas and the oxygen gas are mixed in the first mixed gas supply pipe 1206; another part of the nitrogen gas supplied by the first nitrogen gas supply pipe 1201 can enter the second mixed gas supply pipe 1207 through the second nitrogen gas branch supply pipe 1205, and the hydrogen gas supplied by the hydrogen gas supply pipe 1203 can enter the second mixed gas supply pipe 1207, and the nitrogen gas and the hydrogen gas are mixed in the second mixed gas supply pipe 1207; then, the mixed nitrogen gas and oxygen gas and the mixed nitrogen gas and hydrogen gas enter the third mixed gas supply pipe 1208 for mixing, and after being ignited by the igniter 1209, they enter the chamber 110 through the normal pressure gas jet pipe 140.

[0077] The filters respectively arranged on the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can filter the gas in the pipes; the hand valves respectively arranged on the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can open and close the pipes to make the gas flow or stop flowing in the pipes; the pressure regulating valves respectively arranged on the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can regulate the pressure in the pipes; and the pressure sensors respectively arranged on the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can detect the pressure in the pipes.

[0078] The gas mass flow controllers arranged on the first mixed gas supply pipe 1206 can precisely measure and control the mass and flow of the mixed nitrogen gas and oxygen gas, and the gas mass flow controllers arranged on the second mixed gas supply pipe 1207 can precisely measure and control the mass and flow of the mixed nitrogen gas and hydrogen gas, so that the flow of the gas participating in the reaction in the chamber 110 can be controlled in a very precise range, and the reaction can be carried out according to the set process parameters, which helps to improve the consistency and quality of the product. Taking chemical vapor deposition in silicon wafer manufacturing as an example, precise control of the mass flow of the reaction gas can ensure that the thickness of the film deposited on the silicon wafer is uniform and the performance is stable.

[0079] In some embodiments, as Figure 8 and Figure 9As shown, the atmospheric pressure jet pipe 140 includes a main body 141 extending along the height direction of the chamber 110 and a connecting part 142 connected to the atmospheric pressure air intake device 120. A plurality of nozzles 143 are uniformly provided on the main body 141. The air intake end is located at the bottom of the chamber 110. The size of the nozzle 143 varies with the distance between the nozzle 143 and the air intake end. The nozzle 143 farther away from the air intake end has a larger size. The height of the uppermost nozzle 143 is greater than or equal to the height of the uppermost wafer in the chamber 110.

[0080] Specifically, the mixed gas in the third mixing gas supply pipe 1208, after entering the main body 141 of the atmospheric pressure jet pipe 140 through the connection 142, can enter the chamber 110 through multiple nozzles 143 arranged from bottom to top on the main body 141, with the airflow direction as follows: Figure 9 As shown by the dashed and solid arrows, the flow rate of the mixed gas gradually decreases as it passes through multiple nozzles 143 arranged from bottom to top on the main body 141. In this embodiment, by sequentially increasing the size of the multiple nozzles 143 arranged from bottom to top on the main body 141, the disadvantage of the gradual decrease in the flow rate of the mixed gas can be compensated for. This ensures that the gas flow rate injected into the chamber 110 by each nozzle 143 is uniform, thereby balancing the gas flow in the chamber 110 and controlling the uniformity of the product film thickness.

[0081] In some embodiments, such as Figure 4 As shown, the low-pressure control device 180 includes: a first main exhaust pipe 1801 providing a gas passage, a first branch exhaust pipe 1802, a second branch exhaust pipe 1804, and a second main exhaust pipe 1806. The inlet end of the first main exhaust pipe 1801 is connected to the outlet end of the chamber 110; the inlet ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are respectively connected to the outlet end of the first main exhaust pipe 1801, and the outlet ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are respectively connected to the inlet end of the second main exhaust pipe 1806; and a main valve 1803 (which can be a...) for controlling the internal gas pressure of the chamber 110 when the chamber 110 is in the process state. Figure 4 The system includes a main valve 1803 (such as an electric valve) and a bypass pneumatic valve 1805, which is used to control the internal pressure of the chamber 110 when the chamber 110 is in a non-process state. The bypass pneumatic valve 1805 is located on the second branch exhaust pipe 1804. A suction pump 1807 is used to draw gas from the inside of the chamber 110. One end of the suction pump 1807 is connected to the exhaust end of the second main exhaust pipe 1806, and the other end is connected to the exhaust gas treatment device 190.

[0082] Specifically, the first main exhaust pipe 1801 can be connected with the total exhaust pipe 160, when low pressure control of the chamber 110 is needed, the first branch exhaust pipe 1802 can be controlled to be in the open state, the second branch exhaust pipe 1804 can be controlled to be in the closed state (achieved by controlling the main valve 1803 to be in the open state and the bypass pneumatic valve 1805 to be in the closed state), and the gas suction pump 1807 is started to run, the gas is extracted by the gas suction pump 1807, so that the gas in the chamber 110 enters the first main exhaust pipe 1801 and the first branch exhaust pipe 1802 through the total exhaust pipe 160, and then enters the gas suction pump 1807 through the first main exhaust pipe 1801 and the first branch exhaust pipe 1802, and enters the tail gas treatment device 190 from the gas suction pump 1807, so as to ensure that the gas pressure in the chamber 110 is in a low pressure state. When low pressure control of the chamber 110 is not needed, the second branch exhaust pipe 1804 can be controlled to be in the open state, the first branch exhaust pipe 1802 can be controlled to be in the closed state (achieved by controlling the main valve 1803 to be in the closed state and the bypass pneumatic valve 1805 to be in the open state), and the gas in the chamber 110 can be discharged through the second branch exhaust pipe 1804. The discharged gas can enter the tail gas treatment device 190.

[0083] In some embodiments, as Figure 4 and Figure 7As shown, the low-pressure gas inlet device 130 comprises a second nitrogen gas supply pipe 1301, a fluorine gas supply pipe 1302, a special gas supply pipe 1303, a fourth mixed gas supply pipe 1306, a fifth mixed gas supply pipe 1307, a sixth mixed gas supply pipe 1312, a first mixed branch gas supply pipe 1308, a second mixed branch gas supply pipe 1309, a third mixed branch gas supply pipe 1310, and a fourth mixed branch gas supply pipe 1311; the exhaust end of the second nitrogen gas supply pipe 1301 is connected with the air inlet end of the third nitrogen gas branch supply pipe 1304 and the fourth nitrogen gas branch supply pipe 1305 respectively, the exhaust end of the third nitrogen gas branch supply pipe 1304 and the fluorine gas supply pipe 1302 is connected with the air inlet end of the fourth mixed gas supply pipe 1306 respectively, the exhaust end of the fourth nitrogen gas branch supply pipe 1305 and the special gas supply pipe 1303 is connected with the air inlet end of the fifth mixed gas supply pipe 1307 respectively, the exhaust end of the fourth mixed gas supply pipe 1306 is connected with the air inlet end of the first mixed branch gas supply pipe 1308 and the second mixed branch gas supply pipe 1309 respectively, the exhaust end of the fifth mixed gas supply pipe 1307 is connected with the air inlet end of the third mixed branch gas supply pipe 1310 and the fourth mixed branch gas supply pipe 1311 respectively, the exhaust end of the first mixed branch gas supply pipe 1308 and the third mixed branch gas supply pipe 1310 is connected with the air inlet end of the sixth mixed gas supply pipe 1312, the exhaust end of the sixth mixed gas supply pipe 1312 is connected with the air inlet end of the low-pressure gas jet pipe 150, the exhaust end of the second mixed branch gas supply pipe 1309 and the fourth mixed branch gas supply pipe 1311 is communicated with the second main exhaust pipe 1806 respectively; the second nitrogen gas supply pipe 1301 is sequentially provided with a filter, a hand valve, a pressure regulating valve, and a pressure sensor; the fluorine gas supply pipe 1302 is sequentially provided with a filter, a hand valve, a filter, a pressure sensor, and a pneumatic valve; the special gas supply pipe 1303 is sequentially provided with a filter, a hand valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve; the third nitrogen gas branch supply pipe 1304, the fourth nitrogen gas branch supply pipe 1305, the first mixed branch gas supply pipe 1308, the second mixed branch gas supply pipe 1309, the third mixed branch gas supply pipe 1310, and the fourth mixed branch gas supply pipe 1311 are all respectively provided with a pneumatic valve; the fourth mixed gas supply pipe 1306 and the fifth mixed gas supply pipe 1307 are both provided with a gas mass flow controller.

[0084] Specifically, the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can be connected with a nitrogen gas source, a fluorine gas source and a special gas source respectively. When the gas pressure in the chamber 110 is controlled to be in a low pressure state by the low pressure pressure control device 180, nitrogen gas, fluorine gas and special gas can be supplied into the chamber 110 through the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 respectively. Part of the nitrogen gas supplied by the second nitrogen gas supply pipe 1301 can enter the fourth mixed gas supply pipe 1306 through the third nitrogen gas branch supply pipe 1304, and the fluorine gas supplied by the fluorine gas supply pipe 1302 can enter the fourth mixed gas supply pipe 1306, and the nitrogen gas and the fluorine gas are mixed in the fourth mixed gas supply pipe 1306; another part of the nitrogen gas supplied by the second nitrogen gas supply pipe 1301 can enter the fifth mixed gas supply pipe 1307 through the fourth nitrogen gas branch supply pipe 1305, and the special gas supplied by the special gas supply pipe 1303 can enter the fifth mixed gas supply pipe 1307, and the nitrogen gas and the special gas are mixed in the fifth mixed gas supply pipe 1307; then, the mixed nitrogen gas and fluorine gas enter the sixth mixed gas supply pipe 1312 through the first mixed branch supply pipe 1308, and the mixed nitrogen gas and special gas enter the sixth mixed gas supply pipe 1312 through the third mixed branch supply pipe 1310, and are mixed in the sixth mixed gas supply pipe 1312, and then enter the chamber 110 through the low pressure gas jet pipe 150.

[0085] The filters respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can filter the gas in the pipes; the hand valves respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can open and close the pipes to make the gas flow or stop flowing in the pipes; the pressure regulating valves respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can regulate the pressure in the pipes; and the pressure sensors respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can detect the pressure in the pipes.

[0086] The gas mass flow controller arranged on the fourth mixed gas supply pipe 1306 can precisely measure and control the mass and flow of the mixed nitrogen and fluorine gas, and the gas mass flow controller arranged on the fifth mixed gas supply pipe 1307 can precisely measure and control the mass and flow of the mixed nitrogen and special gas, so that the flow of the gas participating in the reaction in the chamber 110 can be controlled in a very precise range, the reaction is performed according to the set process parameters, and the consistency and quality of the product are improved. For example, in the chemical vapor deposition in the manufacture of silicon wafers, precise control of the mass flow of the reaction gas can ensure that the thickness of the film deposited on the silicon wafer is uniform and the performance is stable.

[0087] In some embodiments, the special gas supplied by the special gas supply pipe 1303 can be determined according to actual conditions, for example, can be silane gas participating in the reaction to deposit a film on a silicon wafer, and the like, which is not limited.

[0088] In some embodiments, as shown in Figure 8 and Figure 10 The low-pressure gas jet pipe 150 is in the shape of "L", one end of the low-pressure gas jet pipe 150 is connected with the low-pressure gas inlet device 130, the other end of the low-pressure gas jet pipe 150 is the gas outlet 151, the low-pressure gas jet pipe 150 extends upward along the height direction of the chamber 110, and the height of the low-pressure gas jet pipe 150 is lower than the height of the lowermost wafer in the chamber 110.

[0089] Since the low-pressure gas inlet device 130 can control the gas pressure in the chamber 110 to be in a low-pressure state through the main valve 1803 and the exhaust pump 1807 and the like, after the gas enters the chamber 110 through the low-pressure gas jet pipe 150, the gas flow direction is first upward to the top of the chamber 110 and then downward to the gas outlet end of the chamber 110, so that the low-pressure gas jet pipe 150 in the shape of "L" can meet the requirements of the low-pressure process on the mixed gas in the sixth mixed gas supply pipe 1312 entering the chamber 110.

[0090] It can be understood that the gas entering the tail gas treatment device 190 can be recovered or removed or reduced in harmful components under the action of the tail gas treatment device 190, so that it can be discharged after treatment, and air pollution is reduced.

[0091] In some embodiments, as shown in Figure 5 The tail gas treatment device 190 includes at least two tail gas treatment chambers 191, and in the case of shutdown of one tail gas treatment chamber 191, the other tail gas treatment chamber 191 can be switched.

[0092] Specifically, the two tail gas treatment chambers 191 can be connected by a pipeline, and a three-way valve 192 is arranged on the pipeline. The three-way valve 192 can automatically switch between the two tail gas treatment chambers 191, so that the tail gas treatment device 190 can be switched to another tail gas treatment chamber 191 in the case of one tail gas treatment chamber 191 being down, and ensure that the tail gas treatment device 190 can operate normally.

[0093] In some embodiments, the furnace tube can further include a control element. The control element receives a user control operation, and controls the normal pressure gas inlet device 120 and the normal pressure pressure control device 170 to be in an enabled state, and the low pressure gas inlet device 130 and the low pressure pressure control device 180 to be in a closed state, so that the wafer in the furnace tube can be processed by a normal pressure process, or controls the normal pressure gas inlet device 120 and the normal pressure pressure control device 170 to be in a closed state, and the low pressure gas inlet device 130 and the low pressure pressure control device 180 to be in an enabled state, so that the wafer in the furnace tube can be processed by a low pressure process.

[0094] The control element can be a control panel, a control button, etc., and is not limited in this regard.

[0095] In some embodiments, when switching from a low pressure process to a normal pressure process, the low pressure gas inlet device 130 can first continue to supply a mixture of fluorine gas and nitrogen gas into the chamber 110 to remove the film layer generated in the chamber 110 during the low pressure process by fluorine gas. The chemical reaction equation can be as follows:

[0096] Si + 2F2→ SiF4 (exothermic reaction)

[0097] The above reaction is an exothermic reaction, so the reaction can be determined by detecting the temperature in the chamber 110, and then determining whether the film layer in the chamber 110 is completely removed. For example, a temperature sensor can be provided to detect the temperature in the chamber 110. When the film layer in the chamber 110 is completely removed, the temperature in the chamber 110 will drop. If the temperature sensor detects that the temperature in the chamber 110 has dropped to a preset temperature or below, it means that the film layer in the chamber 110 has been completely removed. The preset temperature can be set according to the actual chemical reaction exothermic situation, for example, the preset temperature can be 400°C or any other suitable temperature, and is not limited in this regard.

[0098] After the film layer inside the chamber 110 is completely removed, the low-pressure gas inlet device 130 stops supplying gas to the chamber 110, the normal-pressure gas inlet device 120 can be started to supply nitrogen into the chamber 110, so that the low-pressure environment inside the chamber 110 is changed into a normal-pressure state, and then the normal-pressure pressure control device 170 is started, so that the chamber 110 is kept in the normal-pressure state, thereby completing the switching from the low-pressure process treatment to the normal-pressure process treatment, and avoiding the backflow of the gas in the exhaust pipe into the chamber 110 to cause pollution when the furnace tube is switched from the low-pressure process mode to the normal-pressure process mode.

[0099] According to another aspect of the present application, a use method of the furnace tube is provided, including the following steps:

[0100] The normal-pressure gas inlet device and the normal-pressure pressure control device are kept enabled, and the low-pressure gas inlet device and the low-pressure pressure control device are kept disabled, so that the wafer is subjected to the normal-pressure process treatment in the chamber.

[0101] The furnace tube can be implemented as the furnace tube described above, and refer to the description above, which will not be repeated here.

[0102] In some embodiments, the step of switching the working environment in the chamber from the low-pressure environment to the normal-pressure environment is as follows: the low-pressure gas supply device is controlled to supply the mixed gas of fluorine and nitrogen into the chamber to completely remove the film layer formed on the inner wall of the chamber; the low-pressure gas supply device and the low-pressure pressure control device are closed, the normal-pressure gas inlet device is started, and nitrogen is supplied to change the low-pressure environment in the chamber into a normal-pressure state; and the normal-pressure pressure control device is started.

[0103] According to another aspect of the present application, a use method of the furnace tube is provided, the low-pressure gas inlet device and the low-pressure pressure control device are kept enabled, and the normal-pressure gas inlet device and the normal-pressure pressure control device are kept disabled, so that the wafer is subjected to the low-pressure process treatment in the chamber.

[0104] The furnace tube can be implemented as the furnace tube described above, and refer to the description above, which will not be repeated here.

[0105] In summary, according to the furnace tube and the use method thereof, the normal-pressure gas inlet device and the normal-pressure pressure control device for supplying gas to the chamber are provided, so that the wafer can be subjected to the normal-pressure process treatment, the low-pressure gas inlet device and the low-pressure pressure control device for supplying gas to the chamber are provided, so that the wafer can be subjected to the low-pressure process treatment, and thus the compatibility of the normal-pressure process treatment and the low-pressure process treatment is realized by one furnace tube.

[0106] While example embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the example embodiments are intended to be illustrative only and not limiting of the scope of the application. Numerous variations and modifications will become apparent to those skilled in the art once the examples embodiments have been described. Such variations and modifications are intended to fall within the scope of the applications. Any feature in the foregoing description and / or accompanying drawings that has a counterpart in one or more patent applications owned by the assignee herein is not duplicated herein for the purpose of limitation and / or expansion of the claims.

[0107] Similarly, it is to be understood that the various features of the application described herein are sometimes grouped together in a single embodiment, figure or description of a related aspect of the application for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various aspects of the application. This method of disclosure, however, is not to be interpreted as reflecting an intention that the application requires more features than are explicitly recited in each claim. Rather, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim acting as a separate embodiment of the application.

[0108] Furthermore, those skilled in the art will recognize that boundaries between the functionality of the above described embodiments are merely illustrative and that the functionality of each can be combined in a single embodiment and / or distributed in additional embodiments. Accordingly, it should be understood that the application has been described in the context of specific examples for purposes of illustration only and that it is not intended to be limited to the specific examples described. Accordingly, the application is not limited to that precisely as shown and described.

[0109] It is noted that the foregoing examples have been described by way of illustration only and not limitation of the application. Alternate embodiments will become apparent to those skilled in the art to which the application pertains without departing from its scope. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The use of the words "first", "second", and "third", etc. do not denote any order. These words can be construed as names.

Claims

1. A furnace tube, characterized in that, include: A chamber for processing wafers; An atmospheric pressure air intake device and a low pressure air intake device are used to supply air to the chamber, and the atmospheric pressure air intake device and the low pressure air intake device are independently connected to the chamber respectively; An atmospheric pressure control device and a low pressure control device are used to control the air pressure inside the chamber, and the atmospheric pressure control device and the low pressure control device independently control the air pressure inside the chamber. An atmospheric pressure jet pipe located inside the chamber and connected to the atmospheric pressure intake device, and a low pressure jet pipe located inside the chamber and connected to the low pressure intake device; The low-pressure control device includes: A first main exhaust pipe, a first branch exhaust pipe, and a second main exhaust pipe provide a gas passage. The inlet end of the first main exhaust pipe is connected to the chamber. The inlet end of the first branch exhaust pipe is connected to the exhaust end of the first main exhaust pipe, and the exhaust end of the first branch exhaust pipe is connected to the inlet end of the second main exhaust pipe. A main valve for controlling the internal air pressure of the chamber when the chamber is in the process state, the main valve being disposed on the first branch exhaust pipe; An air pump is used to draw gas from inside the chamber. One end of the air pump is connected to the exhaust end of the second main exhaust pipe, and the other end is connected to the exhaust gas treatment device.

2. The furnace tube according to claim 1, characterized in that, The chamber includes an air inlet and an air outlet; The atmospheric pressure intake device is connected to the atmospheric pressure jet pipe through the intake end, and the low pressure intake device is connected to the low pressure jet pipe through the intake end; The atmospheric pressure control device and the low pressure control device are respectively connected to the gas outlet.

3. The furnace tube according to claim 2, characterized in that, The low-pressure control device also includes: A second branch exhaust pipe provides a gas passage, wherein the inlet end of the first main exhaust pipe is connected to the outlet end; the inlet end of the second branch exhaust pipe is connected to the outlet end of the first main exhaust pipe, and the outlet end of the second branch exhaust pipe is connected to the inlet end of the second main exhaust pipe. A bypass pneumatic valve for controlling the internal pressure of the chamber when the chamber is in a non-processing state, the bypass pneumatic valve being disposed on the second branch exhaust pipe.

4. The furnace tube according to claim 2, characterized in that, The atmospheric pressure control device includes: The system comprises a third main exhaust pipe, a mixing exhaust pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe, and a fourth branch exhaust pipe. The exhaust end of the third main exhaust pipe is connected to one end of the condenser, and the other end of the condenser is connected to the inlet of the mixing exhaust pipe. The outlet of the mixing exhaust pipe is connected to the inlet of the drain pipe and the inlet of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe. The exhaust ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe are connected to the exhaust gas treatment device. The drain pipe is equipped with a water tank and a pneumatic valve; the first branch exhaust pipe is equipped with a pneumatic valve and an absolute pressure control valve; the second branch exhaust pipe is equipped with a pneumatic valve and a relative pressure control valve; the third branch exhaust pipe is equipped with an automatic valve and a one-way valve; and the fourth branch exhaust pipe is equipped with a pneumatic valve. The relative pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is higher than the first set temperature. The absolute pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is less than or equal to the first set temperature.

5. The furnace tube according to claim 2, characterized in that, The atmospheric pressure jet pipe includes a main body extending along the height direction of the chamber and a connecting part connected to the atmospheric pressure air intake device. A plurality of nozzles are uniformly arranged on the main body. The air intake end is located at the bottom of the chamber. The size of the nozzles varies with the distance between the nozzles and the air intake end. The nozzles farther away from the air intake end are larger. The height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber.

6. The furnace tube according to claim 2, characterized in that, The low-pressure jet pipe is L-shaped, with one end connected to the low-pressure air intake device and the other end serving as an air outlet. It extends upward along the height of the chamber, and the height of the low-pressure jet pipe is lower than the height of the lowest wafer in the chamber.

7. The furnace tube according to claim 1, characterized in that, The atmospheric pressure intake device includes: First nitrogen supply pipe, oxygen supply pipe, hydrogen supply pipe, first mixed gas supply pipe, second mixed gas supply pipe and third mixed gas supply pipe; The exhaust end of the first nitrogen supply pipe is connected to the inlet end of the first nitrogen branch supply pipe and the second nitrogen branch supply pipe, respectively. The exhaust ends of the first nitrogen branch supply pipe and the oxygen supply pipe are connected to the inlet end of the first mixing supply pipe, respectively. The exhaust ends of the second nitrogen branch supply pipe and the hydrogen supply pipe are connected to the inlet end of the second mixing supply pipe, respectively. The exhaust ends of the first mixing supply pipe and the second mixing supply pipe are connected to the inlet end of the third mixing supply pipe, respectively. The exhaust end of the third mixing supply pipe is connected to the inlet end of the atmospheric pressure jet pipe. Each of the first nitrogen supply pipe, the oxygen supply pipe, and the hydrogen supply pipe is respectively provided with a filter, a manual valve, a pressure regulating valve, and a pressure sensor. The hydrogen supply pipe is also provided with a pneumatic valve located after the pressure sensor. Each of the first nitrogen branch supply pipe and the second nitrogen branch supply pipe is respectively provided with a pneumatic valve. The first and second mixing gas supply pipes are respectively equipped with a gas mass flow controller and a pneumatic valve, and the third mixing gas supply pipe is equipped with an igniter.

8. The furnace tube according to claim 3, characterized in that, The low-pressure air intake device includes: Second nitrogen supply pipe, fluorine supply pipe, special gas supply pipe, fourth mixed gas supply pipe, fifth mixed gas supply pipe, sixth mixed gas supply pipe, first mixed branch gas supply pipe, second mixed branch gas supply pipe, third mixed branch gas supply pipe and fourth mixed branch gas supply pipe; The exhaust end of the second nitrogen supply pipe is connected to the inlet ends of the third and fourth nitrogen branch supply pipes, respectively. The exhaust ends of the third nitrogen branch supply pipe and the fluorine supply pipe are connected to the inlet ends of the fourth mixing supply pipe, respectively. The exhaust ends of the fourth nitrogen branch supply pipe and the special gas supply pipe are connected to the inlet ends of the fifth mixing supply pipe, respectively. The exhaust end of the fourth mixing supply pipe is connected to the inlet ends of the first and second mixing branch supply pipes, respectively. The exhaust end of the fifth mixing supply pipe is connected to the inlet ends of the third and fourth mixing branch supply pipes, respectively. The exhaust ends of the first and third mixing branch supply pipes are connected to the inlet end of the sixth mixing supply pipe, respectively. The outlet end of the sixth mixing supply pipe is connected to the inlet end of the low-pressure jet pipe, respectively. The exhaust ends of the second and fourth mixing branch supply pipes are connected to the second main exhaust pipe. The second nitrogen supply pipe is equipped with a filter, a manual valve, a pressure regulating valve, and a pressure sensor in sequence; the fluorine supply pipe is equipped with a filter, a manual valve, a filter, a pressure sensor, and a pneumatic valve in sequence; the special gas supply pipe is equipped with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve in sequence; the third nitrogen branch supply pipe, the fourth nitrogen branch supply pipe, the first mixing branch supply pipe, the second mixing branch supply pipe, the third mixing branch supply pipe, and the fourth mixing branch supply pipe are each equipped with a pneumatic valve; the fourth mixing supply pipe and the fifth mixing supply pipe are each equipped with a gas mass flow controller.

9. The furnace tube according to claim 3 or 4, characterized in that, The exhaust gas treatment device includes at least two exhaust gas treatment chambers, and can switch to the other exhaust gas treatment chamber if one of the exhaust gas treatment chambers fails.

10. A method of using the furnace tube as described in claim 1, characterized in that, Includes the following steps: The atmospheric pressure intake device and the atmospheric pressure control device remain enabled, while the low pressure intake device and the low pressure control device remain disabled, allowing the wafer to undergo atmospheric pressure processing within the chamber.

11. The method of use according to claim 10, characterized in that, The steps for controlling the working environment within the chamber to switch from a low-pressure environment to an atmospheric pressure environment are as follows: The low-pressure air intake device is controlled to introduce a mixture of fluorine and nitrogen gas into the chamber to completely remove the film layer formed on the inner wall of the chamber; Close the control device for the low-pressure air intake and the control device for the low-pressure pressure, open the control device for the atmospheric pressure air intake, and introduce nitrogen to change the low-pressure environment in the chamber to an atmospheric pressure state. Turn on the atmospheric pressure control device.

12. A method of using the furnace tube as described in claim 1, characterized in that, The low-pressure air intake device and the low-pressure pressure control device remain enabled, while the atmospheric pressure air intake device and the atmospheric pressure control device remain disabled, allowing the wafer to undergo low-pressure processing within the chamber.

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