Heat treatment device

Abstract

An embodiment of the present disclosure provides a heat treatment apparatus, comprising: a chamber defined by a first housing and a second housing; the workpiece supporting assembly is used for supporting a semiconductor workpiece; the heating assembly is used for heating the workpiece, and the heating assembly is arranged on the first side of the cavity; the temperature measuring assembly is used for obtaining the temperature of the workpiece and comprises a light wave emitter located on the second side of the cavity, and the light wave emitter emits first light rays of a target frequency to the workpiece at a preset angle; the first receiver is positioned on the second side of the cavity and is arranged on a light path of the second light which is reflected by the workpiece after being emitted by the light wave emitter so as to measure the intensity of the second light; the temperature calculation unit is used for determining the emissivity of the workpiece according to the intensity of the first light and the intensity of the second light and determining the temperature of the irradiated position of the workpiece according to the emissivity; and the baffle plate is arranged between the workpiece and the light wave emitter so as to at least partially prevent the light radiation emitted by the heating assembly from being received by the first receiver. According to the technical scheme of the embodiment of the invention, the emissivity of the semiconductor workpiece can be measured in real time, so that the temperature of the semiconductor workpiece can be accurately obtained.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor processing equipment, and in particular to a heat treatment device. Background Art

[0002] At present, semiconductor rapid thermal processing equipment can be divided into two categories according to the heating method: single-sided heating and double-sided heating. Among them, a black body chamber is often constructed in single-sided heating equipment through a reflective plate with high reflectivity. The black body chamber converts the true emissivity of the wafer into an effective emissivity, which is beneficial for the pyrometer to measure the temperature. However, the true emissivity of the wafer surface cannot be measured in a black body chamber environment. Monitoring the true emissivity of the wafer is of great significance for characterizing the state of the wafer at different temperatures and developing processing processes in different temperature zones. Summary of the invention

[0003] The embodiments of the present disclosure provide a heat treatment device to solve or alleviate one or more technical problems in the prior art.

[0004] As one aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a heat treatment device, comprising:

[0005] a chamber defined by a first shell and a second shell;

[0006] A workpiece support assembly for supporting a semiconductor workpiece;

[0007] A heating assembly, used for heating the workpiece, the heating assembly being disposed on the first side of the chamber;

[0008] The temperature measuring component is used to obtain the temperature of the workpiece. The temperature measuring component includes:

[0009] A light wave transmitter located at a second side of the chamber, the light wave transmitter transmits a first light of a target frequency to the workpiece at a preset angle; wherein the second side is an opposite side to the first side, and the preset angle is an angle between the first light and a plane where the workpiece is located;

[0010] a first receiver located at the second side of the chamber, the first receiver being arranged on the optical path of the second light emitted by the light wave transmitter and reflected by the workpiece to measure the intensity of the second light;

[0011] a temperature calculation unit, configured to determine the emissivity of the workpiece according to the intensity of the first light and the intensity of the second light, and determine the temperature of the irradiated position of the workpiece according to the emissivity; and

[0012] The baffle is arranged between the workpiece and the light wave transmitter to at least partially block the light radiation emitted by the heating component from being received by the first receiver, wherein the baffle is provided with a through hole for allowing the first light and / or the second light to pass through.

[0013] In one embodiment, the temperature measurement component further includes:

[0014] a second receiver located at the first side of the chamber, the second receiver being arranged on the optical path of the third light emitted by the light wave transmitter and transmitted through the workpiece to measure the intensity of the third light;

[0015] The temperature calculation unit is used to determine the emissivity of the workpiece according to the intensity of the first light, the intensity of the second light and the intensity of the third light; and to determine the temperature of the workpiece according to the emissivity.

[0016] In one embodiment, a coating for absorbing light radiation is provided on a first side of the baffle, and the baffle blocks and absorbs light radiation emitted by the heating assembly.

[0017] In one embodiment, the coating has an absorptivity of not less than 95% for at least a portion of the spectrum.

[0018] In one embodiment, the baffle is made of metal, and a fluid circulation pipeline for cooling the baffle is provided inside the baffle.

[0019] In one embodiment, the workpiece support assembly includes an edge ring for holding up an edge portion of the workpiece and a support ring connecting the edge ring and the rotor; the baffle is disposed between inner walls of the support ring.

[0020] In one embodiment, the preset angle is 90°, the first light emitted by the light wave transmitter is perpendicular to the plane where the workpiece is located, and the light wave transmitter and the first receiver are arranged at the same position.

[0021] In one embodiment, the preset angle is an acute angle, and the first light emitted by the light wave transmitter passes through the first through hole on the baffle and reaches the surface of the workpiece, and the second light passes through the second through hole on the baffle and is received by the first receiver, wherein the spacing between the first receiver and the light wave transmitter is related to the preset angle.

[0022] In one embodiment, the temperature measurement component includes a central temperature measurement component, the central temperature measurement component includes a central transmitter for emitting a first light to a central portion of the workpiece, and a central receiver corresponding to the central transmitter; and / or

[0023] The temperature measuring component comprises an edge temperature measuring component, and the edge temperature measuring component comprises an edge emitter for emitting a first light to an edge portion of a workpiece, and an edge receiver corresponding to the edge emitter.

[0024] In one embodiment, the wavelength band of the first light emitted by the light wave emitter is lower than 1 um or between 1 um and 3 um.

[0025] In one embodiment, the frequency range of the target frequency is 20 Hz to 200 Hz.

[0026] The embodiment of the present disclosure adopts the above technical solution to measure the emissivity of the semiconductor workpiece in real time, thereby accurately obtaining the temperature of the semiconductor workpiece.

[0027] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments provided according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0029] Figure 1 A schematic structural diagram of a heat treatment device according to an embodiment of the present disclosure is shown;

[0030] Figure 2 A schematic structural diagram of a heat treatment device according to another embodiment of the present disclosure is shown;

[0031] Figure 3 A schematic structural diagram of a heat treatment device using an upper heating mode according to another embodiment of the present disclosure is shown;

[0032] Figure 4 A schematic structural diagram of a workpiece support component according to an embodiment of the present disclosure is shown.

[0033] Explanation of the reference numerals: 10, chamber; 11, first shell; 12, second shell; 20, workpiece support assembly; 21, edge ring; 22, support ring; 23, rotor; 30, heating assembly; 40, temperature measuring assembly; 41, light wave transmitter; 42, first receiver; 43, second receiver; 50, baffle; 60, workpiece; 71, first light ray; 72, second light ray; 73, third light ray. DETAILED DESCRIPTION

[0034] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0035] In the related art, the single-sided heating equipment uses the blackbody chamber concept to measure the effective emissivity of the wafer. In order to construct a blackbody chamber, a high-reflectivity reflector is arranged under or above the wafer. Usually the reflectivity of the reflector is higher than 95%. In addition, in order to reduce the contamination of the pyrometer detection signal by the light emitted by the lamp, the support ring and edge ring around the wafer and the reflector will be coated. Thereby blocking the light from the lamp and the inner wall of the chamber from entering the blackbody chamber and contaminating the detection signal of the pyrometer. The high-reflectivity reflector will reflect the light emitted by the wafer into the transmitter and receiver, which will cause greater interference to the signal detection and reduce the signal-to-noise ratio (SNR) of the emissivity measurement device.

[0036] In order to at least partially solve one or more of the above-mentioned problems and other potential problems, an embodiment of the present disclosure provides a heat treatment device, which uses a transmitter and a receiver to measure the emissivity of the wafer in real time, and does not need to build a black body chamber structure above or below the wafer. In other words, the present disclosure does not use a reflective plate with a high reflectivity to avoid interference caused by a reflective plate with a high reflectivity. Using the technical solution of the embodiment of the present disclosure, the emissivity of the wafer can be measured in real time, thereby accurately obtaining the temperature of the wafer.

[0037] Figure 1 FIG. 2 is a schematic diagram showing the structure of a heat treatment device according to an embodiment of the present disclosure. Figure 1 As shown, the heat treatment device comprises:

[0038] The chamber 10 is defined by a first shell 11 and a second shell 12 .

[0039] The workpiece supporting assembly 20 is used to support a semiconductor workpiece 60 .

[0040] The heating assembly 30 is used to heat the workpiece 60 . The heating assembly 30 is disposed at the first side of the chamber 10 .

[0041] The temperature measuring component 40 is used to obtain the temperature of the workpiece 60. The temperature measuring component 40 includes:

[0042] The light wave transmitter 41 is located at the second side of the chamber 10, and the light wave transmitter 41 transmits a first light 71 of a target frequency to the workpiece 60 at a preset angle; wherein the second side is the opposite side of the first side, and the preset angle is the angle between the first light 71 and the plane where the workpiece 60 is located;

[0043] A first receiver 42 located at the second side of the chamber 10 , the first receiver 42 being disposed on the optical path of the second light 72 emitted by the light wave emitter 41 and reflected by the workpiece 60 , so as to measure the intensity of the second light 72 ;

[0044] The temperature calculation unit is used to determine the emissivity of the workpiece 60 according to the intensity of the first light 71 and the intensity of the second light 72, and determine the temperature of the irradiated position of the workpiece 60 according to the emissivity.

[0045] The baffle 50 is disposed between the workpiece 60 and the light wave transmitter 41 to at least partially block the light radiation emitted by the heating component 30 from being received by the first receiver 42, wherein the baffle 50 is provided with a through hole for allowing the first light 71 and / or the second light 72 to pass through.

[0046] In the embodiment of the present disclosure, Figure 1 For reference, define Figure 1 In the vertical direction from top to bottom of the heat treatment equipment, the first side is opposite to the second side. When the first side is the upper side in the vertical direction, the second side is the lower side. Conversely, when the first side is the lower side in the vertical direction, the second side is the upper side.

[0047] For the rapid thermal processing (RTP) equipment of semiconductor wafers, if a halogen lamp is used as a heat source, the wafer is heated in a rotating state, the heating method is single-sided heating, and the heating temperature is between 200°C and 1800°C. The heat treatment device of the embodiment of the present disclosure can be used as a processing equipment for annealing, oxidation, film growth, etc. The semiconductor workpiece 60 can be a silicon wafer to be processed (such as a substrate, a wafer, a chip).

[0048] The chamber 10 can be a square chamber or a circular chamber. The first shell can be understood as the upper part of the chamber, and the second shell can be understood as the lower part of the chamber. During the heating process, in order to ensure that the surface of the workpiece 60 is heated evenly, the workpiece 60 needs to be rotated. In the embodiment of the square chamber 10, the workpiece support assembly 20 can be an air flotation device, and air is supplied at the air inlet of the air flotation, which can float the tray, rotate clockwise or counterclockwise, and drive the workpiece 60 to rotate clockwise or counterclockwise. In the embodiment of the circular chamber 10, in addition to using an air flotation device to rotate the wafer, a magnetic suspension device can also be used to rotate the workpiece 60. A typical magnetic suspension device includes a stator and a rotor, and its arrangement can be implemented using any structure in the prior art, and the rotor drives the workpiece 60 to rotate.

[0049] The disclosed embodiment adopts a single-sided heat source to heat the semiconductor workpiece 60, that is, the heating component 30 is arranged on the first side of the chamber 10. The heating component 30 can be a lamp array, and the heating lamps in the lamp array can be halogen lamps, arc lamps, etc. The geometric shape of the lamp can be a strip lamp, a circular lamp, etc., or an array formed by a single lamp. It should be noted that the heating lamp is placed on the lamp board, and its heating power is controlled by a controllable vacuum silicon or an insulated gate bipolar transistor to realize a heating process of rapidly heating and cooling the wafer.

[0050] The light array can be arranged above or below the wafer. It is worth noting that the existing single-sided heating equipment is limited by the black body chamber structure, and the light array is often arranged above the wafer, presenting a top heating mode. The embodiment of the present disclosure uses a transmitter and a receiver to monitor the emissivity of the wafer in real time, which is not limited by the black body chamber structure. Therefore, the light array can be easily arranged below the wafer, presenting a bottom heating mode (such as Figure 1 , 2 The bottom heating mode has a significant effect on optimizing the flow field of the reaction chamber and enhancing the reaction effect of a specific process.

[0051] A quartz plate is usually arranged between the lamp array and the workpiece 60. The area between the quartz plate and the wafer will provide space (reaction chamber) for the process gas flow and reaction. In a possible implementation, the quartz plate can be subjected to ion implantation to block the light within a specific wavelength range emitted by the lamp from entering the reaction chamber. In other words, the quartz plate used in the embodiment of the present disclosure has selective transmittance of light. The wavelength range of the selective transmittance emission can be between 800nm ​​and 3000nm.

[0052] In order to monitor the actual emissivity of the wafer surface in real time, a light wave transmitter 41 capable of transmitting a specific frequency is used to transmit light waves of a specified band. The band can be lower than 1um (typical value is between 800 and 950nm) or higher than lum (between 1 and 3um), that is, the light wave transmitter 41 is an infrared light wave transmitter. The typical emission frequency range can be between 20Hz and 200Hz. The first light 71 emitted by the light wave transmitter 41 passes through the preset through hole on the baffle 50, and after irradiating the workpiece 60, the light wave of this frequency and wavelength will be reflected on the surface of the workpiece or penetrate the workpiece. The reflected part is received by the first receiver 42. In the thermal equilibrium state, the real emissivity (ε) of the wafer is equal to its absorptivity. The sum of the absorptivity (α), reflectivity (ρ) and transmittance (τ) is equal to 1. Therefore, if the reflectivity and transmittance of the wafer at a certain temperature are known, its emissivity can be calculated according to the following formula:

[0053] ε=α=1-ρ-τ

[0054] In the thermal equilibrium state, the transmittance of the wafer mainly depends on the optical properties of the material (such as refractive index and absorption coefficient) and the wavelength of the light wave. For specific materials and wavelength ranges, these optical properties fluctuate less within the process temperature variation range, so the transmittance can usually be regarded as a constant value. Thus, the reflectivity can be obtained based on the intensity of the first light 71 and the measured intensity of the second light 72. The emissivity of the workpiece 60 can be obtained based on the reflectivity and the preset (pre-calculated or pre-measured) transmittance, and the temperature of the irradiated position of the workpiece 60 can be further determined based on the emissivity.

[0055] According to the solution of the embodiment of the present disclosure, the emissivity of the workpiece can be measured in real time by using a light wave transmitter 41 and a receiver, so as to accurately obtain the temperature of the workpiece without constructing a black body chamber structure above or below the workpiece.

[0056] In one embodiment, the temperature measuring component 40 further includes:

[0057] A second receiver 43 located at the first side of the chamber 10 , the second receiver 43 being disposed on the optical path of the third light 73 emitted by the light wave emitter 41 and transmitted through the workpiece 60 , so as to measure the intensity of the third light 73 ;

[0058] The temperature calculation unit is used to determine the emissivity of the workpiece 60 according to the intensity of the first light 71 , the intensity of the second light 72 , and the intensity of the third light 73 ; and determine the temperature of the workpiece 60 according to the emissivity.

[0059] In the embodiment of the present disclosure, in order to measure the penetration rate of the wafer, as Figure 1 , 2 As shown, it is necessary to install a second receiver 43 on the optical path of the light wave transmitter 41. The intensity of the light wave emitted by the transmitter is I 0 The second receiver 43 on the opposite side of the transmitter receives a penetration energy intensity of I 1 The first receiver 42 on the same side of the transmitter receives the reflected energy intensity I 2 The real-time emissivity of the wafer at different temperatures can be derived through the corresponding processing algorithm:

[0060] ε=f(I 0 ,I 1 ,I 2 )

[0061] The real-time transmittance of the wafer can be obtained more accurately through the second receiver 43, thereby helping to improve the accuracy of the temperature data finally obtained. On the other hand, the intensity of the first light 71 is usually a known parameter that can be set by the light wave transmitter 41, but the second receiver 43 can also be used to directly receive the first light 71 of the light wave transmitter 41 without placing the workpiece 60 in the chamber 10, so as to obtain or calibrate the intensity of the first light 71.

[0062] In one embodiment, the light wave transmitter 41, the first receiver 42 and the second receiver 43 are arranged outside the chamber 10. Specifically, the light wave transmitter 41 and the first receiver 42 can be arranged outside the shell of the second side of the chamber 10, and the second receiver 43 can be arranged outside the shell of the first side of the chamber 10. The shell of the chamber 10 has an opening for light to pass through, and a light guide can be arranged in the opening to ensure the sealing of the chamber 10 while allowing the first light 71 emitted by the light wave transmitter 41 and the corresponding second light 72 and third light 73 to pass through.

[0063] According to the solution of the embodiment of the present disclosure, the emissivity of the workpiece 60 can be obtained more accurately.

[0064] In one embodiment, a coating for absorbing light radiation is provided on a first side of the baffle 50 , and the baffle 50 blocks and absorbs light radiation emitted by the heating assembly 30 .

[0065] In the embodiment of the present disclosure, a coating is applied to the baffle 50 so that the baffle 50 has a high absorptivity for at least part of the spectrum, thereby forming a high absorptivity plate. The high absorptivity plate can effectively absorb the excess light radiation emitted by the heating component 30 to prevent it from being reflected onto the infrared temperature measurement receiver and causing interference. In other words, the high absorptivity plate absorbs radiation energy and reduces the reflection and scattering of non-target radiation, thereby improving the signal-to-noise ratio of the measurement signal. In contrast, a high-reflection plate will cause the light radiation to be reflected multiple times in the chamber, increase background radiation, and interfere with the infrared temperature measurement signal. On the other hand, the high-reflection plate will reflect the light radiation back to the chamber, but it does not directly act on the wafer, which may result in energy waste. The high-absorptivity plate reduces unnecessary energy dissipation by absorbing light energy and converting it into heat energy or conducting it out.

[0066] According to the solution of the embodiment of the present disclosure, the high absorption rate plate can improve the signal-to-noise ratio of the measurement signal, realize more accurate real-time temperature monitoring and emissivity measurement, and optimize process control; it can also absorb and convert excess light radiation into thermal energy, thereby improving the overall thermal efficiency of the system.

[0067] In one embodiment, the coating has an absorptivity of not less than 95% for at least a portion of the spectrum.

[0068] In the disclosed embodiment, the coating has an absorptivity of not less than 95% for at least a portion of the spectrum, and in particular, an absorptivity of not less than 95% for light radiation between 800 nm and 3000 nm emitted by the heating component 30 .

[0069] By absorbing the light radiated by the wafer through the high absorption plate, the signal-to-noise ratio will be significantly enhanced, which is conducive to accurately measuring the actual emissivity of the wafer. In a possible implementation, the absorption rate of the high absorption plate for the full-band spectrum can reach more than 97%. In other words, the reflectivity of the absorption plate will be less than 3%.

[0070] It should be noted that in the implementation scheme of rotating the wafer using a magnetic levitation device, in order to fix the wafer above the rotor 23, the support ring 22 and the edge ring 21 are required to hold up the wafer. As mentioned above, in order to construct the black body chamber 10 structure, the existing single-sided heating equipment will coat the support ring 22 and the edge ring 21, so as to absorb the light within the specified wavelength range to prevent it from contaminating the signal in the black body chamber 10. For the heat treatment device in the embodiment of the present disclosure, when using magnetic levitation to rotate the wafer, the support ring 22 and the edge ring 21 do not need to have the ability to absorb light of the specified wavelength. In a possible implementation scheme, the support ring 22 and the edge ring 21 can be made of transparent fused quartz.

[0071] In one embodiment, the coating is a ceramic coating, such as silicon carbide, chromium oxide, etc., which has high absorptivity and high temperature resistance. Or nanomaterials (such as titanium oxide or carbon-based coatings) are used to improve the absorption capacity of specific bands.

[0072] In one embodiment, the baffle 50 is made of metal, and a fluid circulation pipeline for cooling the baffle 50 is provided inside the baffle 50 .

[0073] In the disclosed embodiment, the baffle 50 can be made of stainless steel, aluminum alloy, copper alloy and the like. The metal surface is polished or roughened to ensure good bonding between the coating and the substrate. The surface coating is firmly attached to the metal body by spraying, deposition or sintering to form a uniform high-absorption surface. The baffle 50 circulates the cooling fluid inside to take away the absorbed heat, thereby preventing the baffle 50 from overheating. The fluid circulation pipeline can be a serpentine pipeline or a ring pipeline. The cooling pipeline is fixed in the metal body by welding or embedding, and the pipeline is in close contact with the body to ensure good thermal conductivity. Interfaces for the coolant inlet and outlet are provided on the baffle 50.

[0074] A heat-insulating layer or heat-insulating coating may be designed on the second side of the baffle 50 and between the baffle and other components to prevent heat from being transferred to other components.

[0075] According to the solution of the embodiment of the present disclosure, the baffle 50 realizes the functions of efficient heat absorption, stable heat dissipation and precise isolation of light radiation, which provides guarantees for the thermal efficiency, temperature measurement accuracy and reliability of the heat treatment device.

[0076] In one embodiment, the workpiece support assembly 20 includes an edge ring 21 for supporting an edge portion of the workpiece 60 and a support ring 22 connecting the edge ring 21 and the rotor 23 ; the baffle 50 is disposed between inner walls of the support ring 22 .

[0077] In the present disclosure, Figure 4 As shown, for the workpiece support assembly 20 including the magnetic suspension device, the baffle 50 is disposed in the annular inner wall of the support ring 22 , and the diameter of the baffle 50 is slightly smaller than the inner diameter of the support ring 22 , so that the baffle 50 can be as close to the workpiece 60 as possible.

[0078] According to the solution of the embodiment of the present disclosure, the baffle 50 is disposed close to the workpiece 60, which helps to improve the heating efficiency.

[0079] In one embodiment, the preset angle is 90°, the first light 71 emitted by the light wave transmitter 41 is perpendicular to the plane where the workpiece 60 is located, and the light wave transmitter 41 and the first receiver 42 are arranged at the same position.

[0080] In the present disclosure, Figure 1 As shown, in order to realize the light emission and receiving measurement process, the transmitter and the receiver on the same side can be combined together. That is, the transmitting end can both emit light and receive light. In this implementation, the transmitting end of the transmitter is perpendicular to the wafer, and similarly, the receiving end of the second receiver 43 on the opposite side is also perpendicular to the wafer. The position of the transmitter can be adjusted so that the first light emitted by it passes through the gaps between several adjacent lamp components in the lamp group array.

[0081] In one embodiment, the preset angle is an acute angle, and the first light 71 emitted by the light wave transmitter 41 passes through the first through hole on the baffle 50 and reaches the surface of the workpiece 60, and the second light 72 passes through the second through hole on the baffle 50 and is received by the first receiver 42, wherein the spacing between the first receiver 42 and the light wave transmitter 41 is related to the preset angle.

[0082] In such Figure 2In another possible implementation shown, the light emitted by the transmitter needs to maintain a certain angle with the wafer. For example, the angle between the transmitting end of the transmitter and the surface of the wafer is an acute angle (θ). In this way, the angle between the receiving end of the receiver on the same side as the transmitter and the wafer is also θ. And the angle between the receiving end of the receiver on the opposite side of the transmitter and the wafer is also θ. In the embodiment of the present disclosure, if a second receiver 43 is required, it is necessary to reduce at least one lamp assembly in the heating assembly 30 to allow the third light 73 to pass through. The larger θ is, the smaller the angle between the first light 71 and the second light 72 is, which can reduce the space required and the number of lamp assemblies that need to be removed. Therefore, θ can be close to 90°, for example, between 85° and 89°.

[0083] In one embodiment, the temperature measuring component 40 includes a central temperature measuring component and an edge temperature measuring component. The central temperature measuring component includes a central emitter for emitting a first light 71 to a central portion of a workpiece 60, and a central receiver corresponding to the central emitter. The temperature measuring component 40 includes an edge temperature measuring component. The edge temperature measuring component includes an edge emitter for emitting a first light 71 to an edge portion of the workpiece 60, and an edge receiver corresponding to the edge emitter.

[0084] In another embodiment, if Figures 1 to 3 As shown, the temperature measuring component 40 includes a central temperature measuring component, which includes a central transmitter for emitting a first light 71 to the central part of the workpiece 60, and a central receiver corresponding to the central transmitter. The central part of the workpiece 60 can be the central point of the workpiece 60, or any position near the central point.

[0085] In another embodiment, the temperature measuring component 40 includes an edge temperature measuring component, which includes an edge emitter for emitting the first light 71 to the edge portion of the workpiece 60 and an edge receiver corresponding to the edge emitter. The edge portion can be understood as the rest of the portion except the central portion.

[0086] In the embodiment of the present disclosure, the temperature measuring component 40 may include one or more light wave transmitters 41. In the above three embodiments, the light wave transmitters 41 of the central temperature measuring component and the edge temperature measuring component are used to measure the emissivity of the workpiece 60, and the temperature measuring component 40 may also include at least one conventional pyrometer to directly measure the surface temperature of the workpiece 60. There is a certain distance between the measuring position of the pyrometer and the irradiation position of the central temperature measuring component and the edge temperature measuring component, so as to obtain the temperature of at least two positions on the workpiece 60.

[0087] In a possible implementation, a wafer radiation model can be constructed by a ray tracing simulation method. Under the premise of knowing the real-time emissivity of the wafer, the current temperature value of the wafer can be inferred through the radiation model, thereby completing the wafer temperature measurement process. In a possible implementation, the measurement wavelength of the pyrometer can be between 800nm ​​and 3000nm. In addition, the present invention can use at least two pyrometers to obtain the temperature distribution of the entire wafer surface.

[0088] In one embodiment, the wavelength of the first light 71 emitted by the light wave emitter 41 is less than 1 um or between 1 um and 3 um.

[0089] In the embodiment of the present disclosure, the wavelength of the first light 71 may be lower than 1um, for example, between 800 and 950nm, or higher than 1um, for example, between 1 and 3um. In one example, it may be at least one of 2.3um and 2.7um.

[0090] In one embodiment, the frequency range of the target frequency is 20 Hz to 200 Hz.

[0091] In some embodiments, the radiation emitted by one or more emitters can be pulsed at a pulse frequency. The pulse frequency can be selected to be or include a frequency having little or no radiation component at the heating component. For example, in some embodiments, the pulse frequency can be approximately 130 Hz. In some embodiments, a pulse frequency of 130 Hz can be particularly advantageous since the heating lamps can emit substantially no radiation having a 130 Hz frequency. As an example of pulsing one or more emitters, a chopper wheel having one or more slits can be rotated in the field of view of one or more emitters such that a continuous stream of radiation from the one or more emitters is intermittently allowed to pass through the chopper wheel at the pulse frequency. Thus, the continuous stream of radiation can be converted into a pulsed stream of radiation at the pulse frequency by the rotation of the chopper wheel.

[0092] Other components of the heat treatment device in the above embodiment can be adopted from various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0093] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0094] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0095] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0096] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0097] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0098] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A heat treatment device, comprising: A chamber (10) defined by a first shell and a second shell; A workpiece support assembly (20) for supporting a semiconductor workpiece (60); A heating component (30) for heating the workpiece (60), wherein the heating component (30) is disposed on a first side of the chamber (10); A temperature measuring component (40) is used to obtain the temperature of the workpiece (60), and the temperature measuring component (40) comprises: a light wave transmitter (41) located on a second side of the chamber (10), the light wave transmitter (41) transmitting a first light of a target frequency toward the workpiece (60) at a preset angle; wherein the second side is an opposite side to the first side, and the preset angle is an angle between the first light and a plane where the workpiece (60) is located; a first receiver (42) located on the second side of the chamber (10), the first receiver (42) being arranged on the optical path of a second light beam emitted by the light wave transmitter (41) and reflected by the workpiece (60) to measure the intensity of the second light beam; a temperature calculation unit, used for determining the emissivity of the workpiece (60) according to the intensity of the first light and the intensity of the second light, and determining the temperature of the irradiated position of the workpiece (60) according to the emissivity; and A baffle (50) is arranged between the workpiece (60) and the light wave transmitter (41) to at least partially block the light radiation emitted by the heating component (30) from being received by the first receiver (42), wherein the baffle (50) is provided with a through hole for allowing the first light and / or the second light to pass through.

2. The heat treatment device according to claim 1, wherein: The temperature measuring component (40) further comprises: a second receiver (43) located at the first side of the chamber (10), the second receiver (43) being arranged on the optical path of a third light (73) emitted by the light wave transmitter (41) and transmitted through the workpiece (60) to measure the intensity of the third light; The temperature calculation unit is used to determine the emissivity of the workpiece (60) according to the intensity of the first light, the intensity of the second light and the intensity of the third light; The temperature of the workpiece (60) is determined based on the emissivity.

3. The heat treatment device according to claim 1, wherein: A coating for absorbing light radiation is provided on a first side of the baffle (50), and the baffle (50) blocks and absorbs light radiation emitted by the heating component (30).

4. The heat treatment device according to claim 3, wherein: The coating has an absorptivity of not less than 95% for at least a portion of the spectrum.

5. The heat treatment device according to claim 1, wherein: The baffle (50) is made of metal, and a fluid circulation pipeline for cooling the baffle (50) is provided inside the baffle (50).

6. The heat treatment device according to claim 1, wherein: The workpiece (60) support assembly (20) comprises an edge ring (21) for supporting an edge portion of the workpiece (60) and a support ring (22) connecting the edge ring (21) and a rotor (23); the baffle (50) is arranged between the inner walls of the support ring (22).

7. The heat treatment device according to claim 1, wherein: The preset angle is 90°, the first light emitted by the light wave transmitter (41) is perpendicular to the plane where the workpiece (60) is located, and the light wave transmitter (41) and the first receiver (42) are arranged at the same position.

8. The heat treatment device according to claim 1, wherein: The preset angle is an acute angle, the first light emitted by the light wave transmitter (41) passes through the first through hole on the baffle (50) and reaches the surface of the workpiece (60), and the second light passes through the second through hole on the baffle (50) and is received by the first receiver (42), wherein the distance between the first receiver (42) and the light wave transmitter (41) is related to the preset angle.

9. The heat treatment device according to claim 1, wherein: The temperature measurement component (40) comprises a central temperature measurement component, wherein the central temperature measurement component comprises a central transmitter for transmitting a first light beam to a central portion of the workpiece (60), and a central receiver corresponding to the central transmitter; and / or The temperature measurement component (40) comprises an edge temperature measurement component, wherein the edge temperature measurement component comprises an edge emitter for emitting a first light beam to an edge portion of the workpiece (60), and an edge receiver corresponding to the edge emitter.

10. The heat treatment device according to claim 1, wherein: The wavelength band of the first light emitted by the light wave emitter (41) is lower than 1 um or between 1 um and 3 um.

11. The heat treatment device according to claim 1, wherein: The target frequency ranges from 20 Hz to 200 Hz.

Images