Silicon wafer fixing device and silicon wafer etching apparatus

Abstract

The application provides a silicon wafer fixing device and a silicon wafer etching equipment, and relates to the technical field of semiconductors.The silicon wafer fixing device comprises a lower bearing table and an upper pressing table, a silicon wafer is arranged on one side of the lower bearing table facing the upper pressing table, a plurality of pressing discs are arranged on the upper pressing table, each pressing disc is formed as a hollow cylindrical structure, the diameters of different pressing discs are different, each pressing disc can ascend or descend in the vertical direction, and a controller is used for acquiring the size of the silicon wafer and the target size of the edge region to be etched on the silicon wafer, controlling the first pressing disc in the plurality of pressing discs to descend and press the first surface of the silicon wafer according to the target size and the size of the silicon wafer, and exposing the edge region of the target size from the first surface.The application can match silicon wafers of different sizes and edge regions to be etched of different sizes, and the etching requirements of silicon wafers of different sizes and edge regions of different sizes can be met through one silicon wafer fixing device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a silicon wafer fixing device and a silicon wafer etching equipment. BACKGROUND

[0002] In the process of silicon wafer processing, a dopant is added to adjust the resistivity of the silicon wafer. The silicon wafer with more dopant added is called a heavily doped silicon wafer. The heavily doped silicon wafer needs to be back sealed, that is, a thin film is deposited on the back of the silicon wafer by a chemical vapor deposition (CVD) method, so as to effectively prevent the diffusion of the dopant to the outside of the silicon wafer.

[0003] After depositing a thin film on the back of the silicon wafer, the subsequent epitaxial growth process may also affect the single crystal growth of the epitaxial layer on the front of the silicon wafer due to the deposition of the thin film on the edge of the silicon wafer. Therefore, the thin film on the edge of the silicon wafer within a certain width needs to be removed by etching to avoid affecting the epitaxial process.

[0004] In the existing etching method, the silicon wafer is placed in the processing cavity of the etching equipment, and the upper disc and the lower disc of the etching equipment are used to press and fix the silicon wafer, and the edge area of the silicon wafer is exposed for etching. However, since the size of the upper disc and the lower disc of the etching equipment is fixed, it cannot meet the etching requirements of silicon wafers of different sizes or edge etching areas of different sizes. SUMMARY

[0005] The embodiments of the present application provide a silicon wafer fixing device and a silicon wafer etching equipment to solve the problem that the existing technology cannot meet the etching requirements of silicon wafers of different sizes or edge etching areas of different sizes when etching the edge of the silicon wafer.

[0006] To solve the above technical problems, the embodiments of the present application provide the technical solutions as follows:

[0007] The embodiments of the present application provide a silicon wafer fixing device, which comprises:

[0008] A lower bearing table and an upper pressing table are arranged in a vertical direction, and the silicon wafer is arranged on one side of the lower bearing table facing the upper pressing table;

[0009] A plurality of pressing discs are arranged on the upper pressing table, wherein each pressing disc is formed as a hollow cylindrical structure, different pressing discs have different diameters, and each pressing disc can rise or fall in the vertical direction;

[0010] a controller configured to acquire a size of the silicon wafer and a target size of an edge region to be etched on the silicon wafer, and control a first pressing disc of the plurality of pressing discs to lower and press against a first surface of the silicon wafer according to the target size and the size of the silicon wafer, so as to expose the first surface to the edge region of the target size, wherein the first surface is a surface of the silicon wafer facing the upper pressing table.

[0011] In some embodiments, the plurality of pressing discs are coaxially arranged.

[0012] In some embodiments, a central axis of the silicon wafer is coaxial with central axes of the plurality of pressing discs.

[0013] In some embodiments, a distance between two adjacent pressing discs is equal in a radial direction of the cylindrical structure.

[0014] In some embodiments, a distance between two adjacent pressing discs gradually increases in a radial direction of the cylindrical structure from a center of the cylindrical structure to an edge of the cylindrical structure.

[0015] In some embodiments, a distance between two adjacent pressing discs gradually decreases in a radial direction of the cylindrical structure from a center of the cylindrical structure to an edge of the cylindrical structure.

[0016] In some embodiments, a distance between two adjacent pressing discs is between 0.5 mm and 3 mm in a radial direction of the cylindrical structure.

[0017] In some embodiments, the upper pressing table further comprises a thickness measuring assembly configured to measure a thickness value of the silicon wafer.

[0018] The controller is connected to the thickness measuring assembly, and the controller is further configured to acquire the thickness value of the silicon wafer sent by the thickness measuring assembly.

[0019] The controller is further configured to determine a distance of the first pressing disc to be lowered according to the thickness value.

[0020] In some embodiments, the silicon wafer fixing device further comprises a driving mechanism.

[0021] The driving mechanism is connected to each pressing disc respectively, and the driving mechanism is configured to drive each pressing disc to ascend or descend in a vertical direction respectively.

[0022] The controller is configured to control the driving mechanism to drive the first pressing disc to lower and press against the first surface of the silicon wafer according to the target size and the size of the silicon wafer.

[0023] In some embodiments, the silicon wafer fixing device further comprises a driving mechanism.

[0024] The driving mechanism is connected to each pressing disc respectively, and the driving mechanism is configured to drive each pressing disc to ascend or descend in a vertical direction respectively.

[0025] In some embodiments, a vacuum extraction device is further arranged on the upper pressing platform.

[0026] The controller is connected with the vacuum extraction device, and the controller is further configured to control the vacuum extraction device to extract the area between the first pressing disc and the first surface of the silicon wafer into a vacuum environment after controlling the first pressing disc in the plurality of pressing discs to press the first surface of the silicon wafer.

[0027] In some embodiments, the lower supporting platform fixes the silicon wafer by vacuum adsorption.

[0028] The embodiment of the present application further provides a silicon wafer etching device, which comprises the silicon wafer fixing device and a shower head.

[0029] The shower head is arranged on one side of the edge of the silicon wafer, and the shower head is configured to spray etching liquid to the edge region of the silicon wafer.

[0030] The embodiment of the present application has the following beneficial effects:

[0031] The silicon wafer fixing device provided by the embodiment of the present application comprises a lower supporting platform and an upper pressing platform which are arranged opposite to each other in the vertical direction. The silicon wafer is placed on the lower supporting platform, and then the size of the silicon wafer and the target size of the edge region to be etched of the silicon wafer are obtained. According to the size of the silicon wafer and the target size, the diameter of the area to be covered by the silicon wafer can be determined. According to the diameter, the first pressing disc in the upper pressing disc which matches the diameter and is used to press the surface of the silicon wafer is determined. The first pressing disc is controlled to descend to press the first surface of the silicon wafer (the first surface is the surface of the silicon wafer facing the upper pressing platform), so that the first surface of the silicon wafer exposes the edge region of the target size, thereby ensuring that the edge region of the target size is etched. Moreover, since a plurality of upper pressing discs with different diameters are arranged on the upper pressing platform, the silicon wafers with different sizes and the edge regions to be etched with different sizes can be matched. Through one silicon wafer fixing device, the etching requirements of the silicon wafers with different sizes and the edge regions with different sizes can be met. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 FIG. 1 shows a structural schematic diagram of a silicon wafer fixing device provided by an embodiment of the present application;

[0033] Figure 2 FIG. 2 shows a top view of an upper pressing platform provided by an embodiment of the present application.

[0034] REFERENCE NUMERALS:

[0035] 1: lower supporting platform; 2: upper pressing platform; 21: pressing disc; 3: silicon wafer. DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present application more clear, the following will be described in detail in conjunction with the drawings and specific embodiments.

[0037] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present application more clear, the following will be described in detail in conjunction with the drawings and specific embodiments. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the described embodiments of the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.

[0038] In order to solve the problem that the edge etching of the silicon wafer cannot meet the etching requirements of silicon wafers of different sizes or edge etching regions of different sizes in the prior art, the embodiments of the present application provide a silicon wafer fixing device and a silicon wafer etching equipment.

[0039] As shown in Figure 1 The embodiments of the present application provide a silicon wafer fixing device, which comprises:

[0040] The lower bearing table 1 and the upper pressing table 2 are arranged opposite to each other in the vertical direction, and the silicon wafer 3 is arranged on one side of the lower bearing table 1 facing the upper pressing table 2.

[0041] As the name implies, the upper pressing table 2 and the lower bearing table 1 are arranged opposite to each other in the vertical direction, and the upper pressing table 2 is located above the lower bearing table 1.

[0042] Among them, the upper pressing table 2 and the lower bearing table 1 can be cylindrical or approximately cylindrical, and the center axes of the upper pressing table 2 and the lower bearing table 1 are located on the same straight line, that is, it can be understood that the upper pressing table 2 and the lower bearing table 1 are arranged opposite to each other.

[0043] Among them, the upper pressing table 2 can move in the vertical direction, and / or the lower bearing table 1 can move in the vertical direction, so as to place the silicon wafer 3 on the side of the lower bearing table 1 facing the upper pressing table 2, that is, to place the silicon wafer 3 on the lower bearing table 1.

[0044] The upper pressing table 2 is provided with a plurality of pressing discs 21.

[0045] The multiple pressing plates 21 arranged on the upper pressing table 2 can be understood as that the upper pressing table 2 is provided with multiple accommodating spaces, the multiple pressing plates 21 are arranged in the accommodating spaces, and the multiple pressing plates 21 can move in the accommodating spaces or can enter or exit the accommodating spaces. Alternatively, the multiple pressing plates 21 arranged on the upper pressing table 2 can also be understood as that the multiple pressing plates 21 are part of the structure of the upper pressing table 2, and the multiple pressing plates 21 can be raised or lowered relative to the structure of the upper pressing table 2 except the multiple pressing plates 21.

[0046] Each of the pressing plates 21 is formed as a hollow cylindrical structure, and the diameters of different pressing plates 21 are different. Each of the pressing plates 21 can be raised or lowered in the vertical direction. The plan view of the upper pressing table 2 is shown in FIG. 2. Figure 2

[0047] The cylindrical structure of the pressing plate 21 can ensure that the pressing surface of the pressing plate 21 on the silicon wafer 3 is circular when the pressing plate 21 presses the surface of the silicon wafer 3, so that the exposed edge region of the silicon wafer 3 is annular. The hollow interior of the cylindrical structure can enable the multiple pressing plates 21 to be arranged on the upper pressing table 2 in a nested manner, so that the structure of the upper pressing table 2 is more compact and the occupied space of the upper pressing table 2 is saved.

[0048] The silicon wafer fixing device further comprises a controller (not shown in the figure, which can be referred to as a control device or a control system). The controller is used to obtain the size of the silicon wafer 3 and the target size of the edge region to be etched on the silicon wafer 3, and to control a first pressing plate among the multiple pressing plates to press the first surface of the silicon wafer 3 according to the target size and the size of the silicon wafer, so that the first surface exposes the edge region of the target size, wherein the first surface is the surface of the silicon wafer 3 facing the upper pressing table 2.

[0049] The size of the silicon wafer and the target size of the edge region to be etched on the silicon wafer obtained by the controller can be manually input in advance or pre-stored in the controller.

[0050] Then, according to the size of the silicon wafer and the target size, the controller determines a first pressing plate among the multiple pressing plates 21. Specifically, the silicon wafer 3 is circular, the size of the silicon wafer includes the radius of the silicon wafer, the edge region to be etched on the silicon wafer 3 is annular, and the target size includes the width (or ring width) of the edge region to be etched on the annular silicon wafer. The radius of the first pressing plate determined by the controller is equal to the radius of the silicon wafer minus the ring width, or the controller obtains the radius of the first pressing plate by subtracting the ring width from the radius of the silicon wafer.

[0051] ​After the first pressing disc determined according to the above process is driven to descend until pressing the first surface of the silicon wafer 3, the part of the silicon wafer 3 not pressed by the first pressing disc is the edge region of the target size exposed on the first surface of the silicon wafer 3, so as to facilitate subsequent etching or other processing of the edge region.

[0052] The first surface can also be understood as the upper surface of the silicon wafer 3.

[0053] It should be noted that the upper surface of the silicon wafer and the lower surface of the silicon wafer are only the surfaces located above and below when the silicon wafer is placed on the lower bearing table. The surface located above is the upper surface of the silicon wafer, and the surface located below is the lower surface of the silicon wafer. It is not limited to the front surface and the back surface of the silicon wafer. In this embodiment, the first surface of the silicon wafer is the back surface of the silicon wafer.

[0054] In the embodiment of the application, a plurality of upper pressing discs 21 of different diameters are arranged on the upper pressing table 2, which can match silicon wafers of different sizes and edge regions to be etched of different sizes. Through one silicon wafer fixing device, the etching requirements of silicon wafers of different sizes and edge regions of different sizes can be met. The process flexibility is increased, and the adaptability and universality of the equipment are improved.

[0055] In some embodiments, the upper pressing table 2 and the lower bearing table 1 are coaxially arranged.

[0056] The central axis of the silicon wafer 3 is located on the axis of the upper pressing table 2 and the lower bearing table 1.

[0057] That is, when the silicon wafer 3 is located above the lower bearing table, the center lines of the upper pressing table 2, the silicon wafer 3 and the lower bearing table 1 are located on the same straight line, so that the centers of the upper pressing table 2, the silicon wafer 3 and the lower bearing table 1 are aligned, so that the coverage of the upper pressing table 2 and the lower bearing table 1 on the silicon wafer 3 is uniform, and the edge region exposed on the first surface of the silicon wafer 3 is a uniform annular shape, so that the etching of the edge of the silicon wafer is uniform.

[0058] In some embodiments, the plurality of pressing discs 21 are coaxially arranged.

[0059] By coaxially arranging the plurality of pressing discs 21, it can be ensured that when different pressing discs 21 are controlled to press the first surface of the silicon wafer 3, the edge region exposed on the first surface of the silicon wafer 3 is annular.

[0060] Specifically, the central axes of the plurality of pressing discs 21, the central axis of the upper pressing table 2 and the central axis of the lower bearing table 1 are located on the same straight line.

[0061] In some embodiments, the central axis of the silicon wafer 3 and the central axes of the plurality of pressing discs 21 are located on the same straight line.

[0062] By setting the center axis of the plurality of pressing discs 21 and the center axis of the silicon wafer 3 to be on the same straight line, it can be ensured that when the pressing disc 21 is controlled to press against the first surface of the silicon wafer 3, the exposed edge region on the first surface of the silicon wafer 3 is annular.

[0063] In some embodiments, the present embodiment provides the following setting methods of the distance between two adjacent pressing discs, including:

[0064] (1) In the radial direction of the cylindrical structure, the distance between two adjacent pressing discs is equal;

[0065] (2) In the radial direction of the cylindrical structure from the center of the cylinder to the edge of the cylinder, the distance between two adjacent pressing discs gradually increases;

[0066] (3) In the radial direction of the cylindrical structure from the center of the cylinder to the edge of the cylinder, the distance between two adjacent pressing discs gradually decreases.

[0067] It should be noted that the distance between two adjacent pressing discs can be understood as the distance between the outer wall surface of the inner pressing disc and the inner wall surface of the outer pressing disc in the crystal direction of the cylindrical structure.

[0068] The setting method of the distance between two adjacent pressing discs can be any one of method (1), method (2) and method (3).

[0069] Preferably, in order to facilitate calculation, the setting method of the distance between two adjacent pressing discs can be selected as method (1).

[0070] It should be further noted that the thickness value of each pressing disc 21 in the plurality of pressing discs 21 can be set in the following ways:

[0071] (4) The thickness value of each pressing disc 21 is equal;

[0072] (5) In the direction from the center of the cylinder to the edge of the cylinder, the thickness value of the pressing disc 21 gradually increases;

[0073] (6) In the direction from the center of the cylinder to the edge of the cylinder, the thickness value of the pressing disc 21 gradually decreases.

[0074] Among them, the setting method of the thickness value of the pressing disc can be any one of method (4), method (5) and method (6).

[0075] Optionally, in the radial direction of the cylinder, the distance between two adjacent pressing discs is between 0.5mm and 3mm.

[0076] It should be noted that in the setting mode of the above-mentioned mode (1), the distance between the two adjacent pressing discs is preferably 1 mm. In the setting mode of the above-mentioned mode (2) and mode (3), the maximum value of the distance between the two adjacent pressing discs and the minimum value of the distance between the two adjacent pressing discs are both required to be between 0.5 mm and 3 mm.

[0077] In some embodiments, the upper pressing table 2 is further provided with a thickness measurement assembly for measuring the thickness value of the silicon wafer 3.

[0078] As an optional embodiment, the thickness measurement assembly measures the thickness value of the silicon wafer at any one direct multiple measurement points of the silicon wafer by using the capacitive voltage method, and takes the average value of the thickness values corresponding to the multiple measurement points as the thickness of the silicon wafer. The thickness of the silicon wafer obtained by the above-mentioned mode is more accurate.

[0079] The controller is connected with the thickness measurement assembly, and the controller is further used for acquiring the thickness value of the silicon wafer sent by the thickness measurement assembly.

[0080] The controller is further used for determining the distance of the first pressing disc descending according to the thickness value.

[0081] Specifically, the first pressing disc will rise to a first preset height after pressing the silicon wafer each time and after the processing of the silicon wafer is completed, that is, it will be reset, and the lower bearing table 1 always remains at a second preset height. The controller can acquire the difference distance between the first preset height and the second preset height, which can be the distance of the accommodation space for placing the silicon wafer. After acquiring the thickness value of the silicon wafer, the controller subtracts the thickness value of the silicon wafer from the difference distance, that is, the target distance of the first pressing disc descending can be obtained. The controller controls the first pressing disc to descend the target distance, that is, it can be ensured that the first pressing disc just presses the first surface of the silicon wafer, that is, it is in critical contact with the first surface. At this time, the upper pressing table 2 and the lower bearing table 1 will not generate excessive pressure with the silicon wafer 3, avoiding the fragmentation or damage of the silicon wafer, further avoiding the influence of the fragmentation on the edge etching equipment of the silicon wafer, avoiding the downtime of the edge etching equipment of the silicon wafer and the high maintenance cost. However, in this case, the silicon wafer can also be fixed by the upper pressing table 2 and the lower bearing table 1 to prevent the silicon wafer from deviating in the subsequent processing process, and the first surface of the silicon wafer can also be covered by the upper pressing table 2 to avoid the etching of the areas that do not need to be etched.

[0082] In some embodiments, the silicon wafer fixing device further comprises a driving mechanism.

[0083] The driving mechanism is connected with each of the pressing discs 21 respectively, and is used to drive each of the pressing discs 21 to ascend or descend in the vertical direction respectively.

[0084] The driving mechanism is an integral structure, that is, each of the pressing discs 21 can be driven to ascend or descend by the driving mechanism, or the driving mechanism comprises a plurality of sub-driving mechanisms, each of the sub-driving mechanisms is connected with one of the pressing discs 21, and the pressing disc 21 connected with the sub-driving mechanism is driven to ascend or descend by the sub-driving mechanism.

[0085] The controller is used to control the driving mechanism to drive the first pressing disc to descend and press the first surface of the silicon wafer according to the target size and the size of the silicon wafer.

[0086] Optionally, the driving mechanism is a gas pressure control mechanism.

[0087] In some embodiments, the upper pressing table is further provided with a vacuum extraction device.

[0088] The controller is connected with the vacuum extraction device, and the controller is further used to control the vacuum extraction device to extract the area between the first pressing disc and the first surface into a vacuum environment after controlling the first pressing disc among the plurality of pressing discs 21 to descend and press the first surface of the silicon wafer 3.

[0089] That is, after the first pressing disc presses the first surface of the silicon wafer 3, the area between the first pressing disc and the first surface is extracted into a vacuum environment by the vacuum extraction device, so that the first pressing disc can vacuum-adsorb the silicon wafer 3, and the silicon wafer 3 can be prevented from being deviated in the subsequent etching process.

[0090] In some embodiments, in order to ensure the stability of the silicon wafer and facilitate the transfer and movement of the silicon wafer, the lower bearing table 1 fixes the silicon wafer by vacuum adsorption.

[0091] In some embodiments, the pressing disc 21 is provided with a sealing ring on the end face facing the lower bearing table 1.

[0092] After the first pressing disc contacts the first surface of the silicon wafer 3, the sealing ring can prevent the etching liquid from flowing into the inside of the silicon wafer surface in the subsequent etching process.

[0093] Preferably, the sealing ring is made of acid-resistant rubber material.

[0094] In another optional embodiment, a pressure sensor is arranged on the first pressing disc 21, and the pressure sensor is connected with the controller. During the descending of the first pressing disc, the pressure sensor senses the pressing force of the first pressing disc. If the pressure sensor senses that the pressing force is greater than a preset value, the pressure sensor sends an indication information to the controller, and the indication information is used to indicate that the first pressing disc presses the first surface of the silicon wafer. According to the indication information, the controller controls the first pressing disc to stop descending.

[0095] The embodiment of the present application also provides a silicon wafer etching device, which comprises the silicon wafer fixing device and the nozzle as any one of the above.

[0096] The nozzle is arranged on one side of the edge of the silicon wafer, and the nozzle is used to spray the etching liquid to the edge region of the silicon wafer.

[0097] The etching liquid can be a liquid containing hydrofluoric acid HF.

[0098] The number of the nozzles is one or more. When the number of the nozzles is more than one, the plurality of nozzles are evenly arranged on the edge of the silicon wafer, so that the nozzles evenly spray the etching liquid to the edge of the silicon wafer.

[0099] It should be noted that the silicon wafer etching device provided by the embodiment of the present application is a device comprising the silicon wafer fixing device as any one of the above. Therefore, all the embodiments of the silicon wafer fixing device are applicable to the silicon wafer etching device, and can achieve the same or similar technical effects.

[0100] The above is the preferred embodiment of the present application. It should be noted that, for those skilled in the art, without departing from the principles of the present application, a number of improvements and refinements can be made, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A silicon wafer fixing device, characterized in that: include: A lower supporting platform and an upper pressing platform are arranged opposite to each other in the vertical direction, and the silicon wafer is arranged on a side of the lower supporting platform facing the upper pressing platform; The upper pressure platform is provided with a plurality of pressure plates, wherein each pressure plate is formed into a cylindrical structure with a hollow interior, different pressure plates have different diameters, and each pressure plate can rise or fall in the vertical direction; A controller is configured to obtain the size of the silicon wafer and the target size of the edge area to be etched on the silicon wafer, and control a first pressing plate among the multiple pressing plates to descend and press against a first surface of the silicon wafer based on the target size and the size of the silicon wafer, so that the first surface exposes an edge area of ​​the target size, wherein the first surface is the surface of the silicon wafer facing the upper pressing platform.

2. The silicon wafer fixing device according to claim 1, characterized in that: The plurality of pressure plates are coaxially arranged.

3. The silicon wafer fixing device according to claim 2, characterized in that: The central axis of the silicon wafer and the central axes of the plurality of pressure plates are located on the same straight line.

4. The silicon wafer fixing device according to claim 1, wherein: In the radial direction of the cylindrical structure, the distance between two adjacent pressure plates is equal; or, In the radial direction from the center of the cylindrical structure toward the edge of the cylinder, the distance between two adjacent pressure plates gradually increases; or, In the radial direction from the center of the cylindrical structure toward the edge of the cylinder, the distance between two adjacent pressure plates gradually decreases.

5. The silicon wafer fixing device according to claim 4, characterized in that: In the radial direction of the cylinder, the distance between two adjacent pressure plates is between 0.5 mm and 3 mm.

6. The silicon wafer fixing device according to claim 1, characterized in that: The upper pressing platform is further provided with a thickness measuring component, and the thickness measuring component is used to measure the thickness value of the silicon wafer; The controller is connected to the thickness measuring component, and the controller is further used to obtain the thickness value of the silicon wafer sent by the thickness measuring component; The controller is further configured to determine a descending distance of the first pressure plate according to the thickness value.

7. The silicon wafer fixing device according to claim 1, wherein: The silicon wafer fixing device further includes a driving mechanism; The driving mechanism is connected to each of the pressure plates, and is used to drive each of the pressure plates to rise or fall in the vertical direction. The controller is used to control the driving mechanism to drive the first pressing plate to descend and press the first surface of the silicon wafer according to the target size and the size of the silicon wafer.

8. The silicon wafer fixing device according to claim 1, wherein: The upper pressing platform is also provided with a vacuum extraction device; The controller is connected to the vacuum extraction device, and the controller is also used to control the vacuum extraction device to extract the area between the first pressure plate and the first surface into a vacuum environment after controlling the first pressure plate among the multiple pressure plates to descend and press the first surface of the silicon wafer.

9. The silicon wafer fixing device according to claim 1, wherein: The lower supporting platform fixes the silicon wafer by vacuum adsorption.

10. A silicon wafer etching device, characterized in that: comprising a silicon wafer fixing device and a showerhead as claimed in any one of claims 1 to 9; The nozzle is arranged on one side of the edge of the silicon wafer, and is used to spray etching liquid toward the edge area of ​​the silicon wafer.

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